Abstract: A workpiece chuck used, for example, to support a semiconductor wafer during processing, is described. In one aspect, the chuck includes a thermal plate assembly which includes both heating and cooling capability. The heating element can be a resistive heater in a coiled configuration disposed in a plane. The cooling can be performed via a cooling fluid circulated through cooling tubes which are also disposed in a coiled configuration in a plane. The plane of the heating element and the cooling tubes can be the same plane, and that plane can be a center plane of the thermal plate assembly. By locating the heating and cooling in the same plane, uniform heating and cooling are achieved. Also, by locating the heating element and cooling tubes in the center of the thermal plate, distortions such as doming and dishing in the thermal plate are eliminated such that the wafer can be held extremely flat on the chuck.

Abstract: A heater includes a substrate having a placing surface for placing an object to be heated, a layer of a main heating element for heating the substrate and the object to be heated, a layer of an auxiliary heating element, and an insulating body interposed between the main heating element layer and the auxiliary heating element layer. An area of the auxiliary heating element layer is smaller than that of the main heating element layer, and while the substrate and the object to be heated are heated with heat generated from the main heating element layer, heat escaped from the substrate is supplemented with heat generated from the auxiliary heating element layer.

Abstract: There is disclosed a ceramic heating jig consisting of a susceptor 2 on which a work to be heated is placed, a ceramic heater 3 for heating the susceptor and at least one heat shielding plate 4 for shielding heat of the ceramic heater wherein the susceptor and the heat shielding plate are located so that each of them is located across the ceramic heater each leaving a certain space therefrom, a thickness of the susceptor is 0.5 m to 5 mm, a thickness of the ceramic heater is 0.5 mm to 3 mm, a thickness of the heat shielding plate is 0.5 mm to 3 mm. Preferably, an interval between the members is 0.5 mm to 10 mm, and the members are elastically held as an integration by the elastic means 6 and the restraint means 7. There can be provided a ceramic heating jig wherein defects such as thermal deformation, breakage or the like of the susceptor or the like are hardly caused, temperature can be raised or lowered rapidly, and flatness of a susceptor can be kept even at high temperature.

Abstract: The present invention generally provides a substrate processing system having a thermally conductive and electrically insulative member coupled to a heated member that provides for heat dissipation from the heated member. In a preferred embodiment, the present invention provides for heat dissipation through thermal conductance of an electrically insulated coil in an IMP reaction chamber.

Abstract: A heating apparatus 1 for preventing increase of the temperature difference on the heating surfaces and occurrence of heat spots in a broad temperature range including a high temperature region includes a substrate 2 made of a ceramic material with a heating surface 2A, a plurality of resistance-heating elements 3 and 4 buried in said substance 2, pairs of terminals 5 and 6, each pair of the terminals 6 and 5 being attached to a respective one of the resistance-heating elements to supply alternating current there to, and AC power sources 11A and 11B each connected to respective one of said pairs of the terminals 6 and 5 for the respective resistance-heating elements to supply the alternating current thereto. Insulating transformers 10A and 10B each are interposed between the respective AC power source and the pair of the terminals.

Abstract: A heater plate and a support structure are provided in a chamber. First terminals are arranged on the reverse side of the heater plate. The support structure is provided with second terminals in positions opposite to the first terminals, individually. The first and second terminals are coupled mechanically and electrically to one another by means of springy joint members of an electrically-conductive material. The joint members are removably attached to the first and second terminals. The heater plate can be separated from the support structure by disengaging the joint members from the first or second terminals.

Abstract: The present invention provides a ceramic heater having better anti thermal shock property. A ceramic substrate 12 is formed by providing heat generation bodies 14a and 14b on the surface of a green sheet made from a slurry containing powdered ceramics, sandwiching the green sheet with other green sheets from both upper and lower sides and then laminating and pressing the compiled green sheets. At least some of the heat generation bodies 14a and 14b are disposed on a level P1b offset from a level P1a of other heat generation bodies in the direction of thickness of the ceramic substrate 12.

Abstract: To provide a ceramic heater which is excellent in the temperature uniformity by using a ceramic material having a high heat-conductivity as a heater substrate.

Abstract: To provide a ceramic heater capable of reducing temperature uniformity at the periphery of through holes such as insertion holes and vacuum suction holes, thereby protecting the wafer against thermal shocks and having improved controllability for temperature control parts such as thermocouples and temperature fuse. Further, a ceramic heater capable of uniform resin curing is provided. A heat generation body 14 is disposed on the surface or inside of the ceramic substrate 12. Further, corners for the insertion holes 16, the recesses 18 and the vacuum suction holes 20 of the ceramic substrate 12 are chamfered.

Abstract: A wafer holder includes a heater interposed between at least one pair of ceramic base members. The wafer holder can be regarded as including a holding surface side structure on a side of the heater facing toward the wafer, and a backside structure on the opposite side of the heater. The backside structure has a heat insulating character. The ceramic base member in the backside structure is formed of ceramic having a lower heat conductivity than that of the ceramic base member in the holding surface side structure. Further, the ceramic base member in the backside structure has a heat conductivity of 100 W/mK or less and a joint layer has a heat conductivity of 10 W/mK or less. In this way, the wafer holder prevents heat from spreading toward the backside of the wafer holder.

Abstract: A thermal cycling module for thermally processing a substrate has a thermally-conductive support structure with a planar first side and a second side with a plurality of recesses. A heater is disposed on the first side of the support structure and a fluid distributor positioned beneath the second side of the support structure to direct a coolant onto the support structure to decrease the temperature of the substrate. The fluid distributor may have a plurality of rotatable arms and a plurality of nozzles attached to each arm.

Abstract: A hard baking apparatus which is capable of evenly heating a semiconductor substrate when a photoresist pattern of the semiconductor substrate is hard baked. The apparatus for hard baking a photoresist pattern including: a chamber; a chuck installed at a lower portion in the chamber on which a semiconductor substrate is mounted; a heating unit installed at an upper portion in the chamber; and a unit installed at a lower portion of the heating unit for evenly distributing light.

Abstract: In order to eliminate the drawback of an electric heating element formed on an insulating ceramic substrate so that the element is brittle and becomes soft at a high temperature, an electrically heat-generating material film having a microstructure composed of a silicide alone, a mixture of silicide and Si, or Si alone is fused to the surface of a nitride or carbide ceramic insulating substrate.

Abstract: A wafer support for supporting and rotating a semiconductor wafer within a rapid thermal process chamber is formed of a single member of unitary construction. The unitary member includes a first, horizontal section for supporting the periphery of the wafer thereon, and a downwardly extending cylindrical section that is mounted for rotation within the chamber. The first and second sections are integrally formed to prevent radiant energy from passing there between and comprise materials that cause the support to act as a black body, yielding more uniform heating of the wafer. A recess formed in the horizontal section receives the outer edge of the wafer and prevents radiant heat from passing between the wafer and the support in those cases where the wafer is warped.

Abstract: A module for thermally processing a substrate has a plurality of thermally-conductive heating elements supported in position within a plane. Resistive heaters in the form of cartridge heaters are in thermal contact with the heating elements. Multiple zones are enabled by physical separation of the heating elements that constitute the thermal processing plate. A cooling plate is positioned in proximity to the backside of the heating elements and can be driven into thermal contact with the upper heated plate when cooing is desired.

Abstract: The invention solves the problem of continuously monitoring wafer temperature during processing using an optical or fluoro-optical temperature sensor including an optical fiber having an end next to and facing the backside of the wafer. This optical fiber is accommodated without disturbing plasma processing by providing in one of the wafer lift pins an axial void through which the optical fiber passes. The end of the fiber facing the wafer backside is coincident with the end of the hollow lift pin. The other end is coupled via an “external” optical fiber to temperature probe electronics external of the reactor chamber. The invention uses direct wafer temperature measurements with a test wafer to establish a data base of wafer temperature behavior as a function of coolant pressure and a data base of wafer temperature behavior as a function of wafer support or “puck” temperature.

Abstract: The present invention provides a heating apparatus that displays a high heating efficiency and a long product life. In addition, present invention provides a heating apparatus that has no limitations with respect to the materials comprising its heat insulating material, which displays an even greater product life and, moreover, can be manufactured easily at low cost.

Abstract: A round heating plate for a heating chamber used in semiconductor device manufacturing provides uniform heating of the wafer from its center to its outside edges. The round heating plate includes a small-diameter round heating element and multiple ring-shaped elements arranged concentrically therewith. The round heating plate has the same shape as the wafer, and in the heating chamber, a pair of round heating plates is arranged so as to be concentric with a pair of wafers to be heated. During heating, the wafers are installed in a space formed between the heating plates.

Abstract: The present invention provides systems, methods and apparatus for high temperature (at least about 500-800° C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

Abstract: A thermal processing unit of the invention includes a processing container that can contain an object to be processed therein, the processing container having a lower end provided with an opening. The opening is opened and closed by a lid. A flange is provided at a peripheral portion of the opening, and a gas-supplying unit is provided at the flange for supplying a gas into the processing container. A heating mechanism can heat the object to be processed contained in the processing container.

Abstract: Disclosed is a heat treating method for heating a target substrate by means of light irradiation, in which a light irradiation treatment is applied to the target substrate a plurality of times such that adjacent light irradiated regions on the target substrate partially overlap with each other and that the adjacent light irradiated regions do not overlap with each other in the light irradiating periods.

Abstract: A heater plate and a support structure are provided in a chamber. First terminals are arranged on the reverse side of the heater plate. The support structure is provided with second terminals in positions opposite to the first terminals, individually. The first and second terminals are coupled mechanically and electrically to one another by means of springy joint members of an electrically-conductive material. The joint members are removably attached to the first and second terminals. The heater plate can be separated from the support structure by disengaging the joint members from the first or second terminals.

Abstract: A processing chamber and methods for employing this processing chamber to thermally treat wafer-like objects. The chamber comprises a double walled shell, a pedestal style heater, internal passages for the transport of cooling gases and removal of exhaust gases, independently variable gas introduction patterns, and a movable door for sealing the chamber. The chamber is designed to permit in situ cooling of wafer-like objects and to provide means for precise optimization of this cooling. The methods provide for the processing of the wafer-like object in an environment where the temperature, rate of change of the temperature, composition of gases and the relative timings of changes to these variables may be controlled to achieve the desired material properties in the wafer-like object or in films contained on this wafer-like object.

Abstract: A heat exchanger apparatus including a heat exchange element and a substrate support. A clamp member is coupled to the heat exchange element and the substrate support by expanding the clamp member to an expanded state sufficient to surround a portion of the substrate support and the heat exchange element, and contracting the clamp member to couple the clamp member to the substrate support.

Abstract: Methods and structures are provided for extremely flat wafer chucks, allowing close thermal contact uniformly across a semiconductor processing substrate. An upper and a lower section are tightly fit to one another with flat inner surfaces in face-to-face contact. The sections also define at least one groove therebetween. The two sections have asymmetrical thickness, but the groove defined therebetween is correspondingly asymmetrical such that the groove is centered in the assembled chuck. A heater element, such as a resistive heater, is placed within the groove with some clearance prior to assembling the upper and lower sections. After assembly and tightening, the chuck is thermally cycled above the normal operating temperature prior to secondary machining, thus assuring flatness that is maintained during high temperature operation.

Abstract: A heating apparatus 1 for preventing increase of the temperature difference on the heating surfaces and occurrence of heat spots in a broad temperature range including a high temperature region is disclosed. The heating apparatus 1 comprises a substrate 2 made of a ceramic material with a heating surface 2A, a plurality of resistance-heating elements 3 and 4 buried in said substance 2, pairs of terminals 3 and 4, each pair of the terminals 6 and 5 being attached to a respective one of the resistance-heating elements to supply alternating current there to, and AC power sources 11A and 11B each connected to respective one of said pairs of the terminals 6 and 5 for the respective resistance-heating elements to supply the alternating current thereto. Insulating transformers 10A and 10B each are interposed between the respective AC power source and the pair of the terminals.

Abstract: A method and an apparatus for preventing particle contamination in a hot plate oven for curing a coating layer on a wafer surface are disclosed.

Abstract: A heater comprising a substrate having a heating surface to treat a substance to be heated on the substrate, a heating element embedded in the substrate, and a resistance control part, wherein the substrate comprises a first ceramic material and the resistance control part comprises a second ceramic material which has higher volume resistivity than that of the first ceramics.

Abstract: A wafer-cleaning module is disclosed for removing contaminants from a semiconductor wafer prior to measurement in a metrology tool. The cleaning module includes a heating chamber including a heater plate for heating the wafer by conduction. A separate cooling chamber is provided to cool the wafer. The system is controlled by a processor so the heating cycle, cooling cycle and the time periods between these cycles and the measurement cycle are uniform for all wafers.

Abstract: A method is provided for treating wafers on a low mass support. The method includes mounting a temperature sensor in proximity to the wafer, which is supported on the low mass support, such that the sensor is only loosely thermally coupled to the wafer. A temperature controller is programmed to critically tune the wafer temperature in a temperature ramp, though the controller directly controls the sensor temperature. A wafer treatment, such as epitaxial silicon deposition, is started before the sensor temperature has stabilized. Accordingly, significant time is saved for the treatment process, and wafer throughput improved.

Abstract: The present invention is an apparatus for performing heat and cooling treatments for a substrate includes: a heating table for mounting the substrate thereon to perform the heat treatment for the substrate; a cooling table for mounting the substrate thereon to perform the cooling treatment for the substrate; a waiting table for allowing the substrate to wait; a carrying mechanism for carrying the substrate between the heating table, the cooling table, and the waiting table; and airflow formation means for forming airflow in a space in which the heating table, the cooling table, and the waiting table are arranged. Since the substrate is mounted on the cooling table during the cooling treatment, the cooling treatment can be performed for the entire substrate uniformly. Thus, the apparatus, in which precise cooling treatment is performed without delay, is excellent in time management on the heat and cooling treatments.

Abstract: A heat treatment table is divided into two or more regions, a heater is disposed for each region. On a predetermined portion of the heat treatment table, a plurality of sensors are disposed separately each other. A relation between temperatures of the respective portions on the heat treatment table and temperatures detected by the sensors is grasped in advance, thereby enables to surmise a temperature of the respective portion of the heat treatment table from the temperature detected by the sensors. In the case of an wafer being actually treated by placing on the heat treatment table, the temperatures detected by the sensors are observed, from these detected temperatures, the temperatures of the respective portions on the heat treatment table, that is, temperatures affecting the wafer, are surmised.

Abstract: A vacuum fixture incorporating a vacuum suctioning device which may be employed in the manufacture of thin film chip carriers through the intermediary of retaining parts which are to be processed on the surface of a suction plate in a dimensionally compensating operative mode. A process is disclosed which may be employed in the manufacture of thin film chip carriers which is adhered in a dimensionally compensating manner to the surface of an interposer plate which is supported on a suction plate of a vacuum fixture.

Abstract: A system and method for thermally processing a substrate. A substrate is heated to a processing temperature at which the substrate is susceptible to plastic deformation or slip. An insulating cover may be removed to initially cool the substrate below such temperature before removal from the system. Gas pressure may also be adjusted to enhance heat transfer during processing and decrease heat transfer prior to removal of the substrate. Susceptors or surfaces for cooling the substrate may also be included in the system. The substrate may be transferred from a heating surface to a cooling surface by moving or rotating the substrate through warm transitional regions to avoid slip.

Abstract: A heater comprising a substrate having a heating surface to treat a substance to be heated on the substrate, a heating element embedded in the substrate, and a resistance control part, wherein the substrate comprises a first ceramic material and the resistance control part comprises a second ceramic material which has higher volume resistivity than that of the first ceramics.

Abstract: The present invention provides a wafer heating device which can improve uniformity of a temperature distribution within a surface area of a wafer, with a relatively simple structure. A wafer is supported on a susceptor of annular shape. A first heater of disc shape is disposed below the wafer, and a second heater of annular shape is disposed to surround the first heater. Radiation thermometers are arranged at a ceiling portion of a reaction chamber. The first radiation thermometer measures a temperature of a central area of the wafer, the second radiation thermometer measures a temperature of a peripheral area of the wafer, and the third radiation thermometer measures a temperature of the susceptor. The first heater and the second heater are controlled by independent closed loops. When a wafer is set on the susceptor, a power of the second heater is controlled by using a value measured by the second radiation thermometer as a feedback signal.

Abstract: There is disclosed a ceramic heating jig consisting of a susceptor 2 on which a work to be heated is placed, a ceramic heater 3 for heating the susceptor and at least one heat shielding plate 4 for shielding heat of the ceramic heater wherein the susceptor and the heat shielding plate are located so that each of them is located across the ceramic heater each leaving a certain space therefrom, a thickness of the susceptor is 0.5 m to 5 mm, a thickness of the ceramic heater is 0.5 mm to 3 mm, a thickness of the heat shielding plate is 0.5 mm to 3 mm. Preferably, an interval between the members is 0.5 mm to 10 mm, and the members are elastically held as an integration by the elastic means 6 and the restraint means 7. There can be provided a ceramic heating jig wherein defects such as thermal deformation, breakage or the like of the susceptor or the like are hardly caused, temperature can be raised or lowered rapidly, and flatness of a susceptor can be kept even at high temperature.

Abstract: There is disclosed an integrated type multiple-layered ceramic heater based on resistance heating comprising an electrical insulating ceramic support substrate, a heater pattern composed of electroconductive ceramic or metal, which is adhered to a surface of the substrate, and an electrical insulating ceramic protective layer covering the heater pattern, wherein a feeding terminal of the heater is connected to a power source terminal member through a feeding member which generates heat when supplied with electric current. The feeding member preferably generates heat at a power density substantially equal to that of the heater. The multiple-layered ceramic heater of the present invention exhibits excellent thermal uniformity, and does not adversely affect thermal uniformity of an object to be heated even when the feeding terminal is present at a location facing the object to be heated.

Abstract: A wafer handling apparatus prevents polymers from sticking to the handler which conveys a wafer into/from a process chamber in which the wafer is treated. The wafer handler has an arm which is rotatably driven and an effector integral with the arm. The wafer is supported on the effector via a vacuum chuck formed by vacuum holes in the effector. The temperature of the handler is controlled to be identical to that inside the process chamber. The temperature controlling system has an electric heater for heating the effector and a current supplying apparatus which intermittently supplies current to the heater to maintain the temperature of the effector. Because the temperature of the handler is maintained at least as high as that inside the process chamber, polymers floating in the process chamber are prevented from sticking to the handler.

Abstract: A ceramic heater includes a ceramic substrate having a heating surface, and a resistance heating element buried inside the ceramic substrate, wherein at least a part of the resistance heating element is constituted by a conductive network member, and a ceramic material constituting the ceramic substrate is filled in meshes of the network member.

Abstract: A heater block for heating a wafer comprising a body member; a wafer support disposed on the body member, the wafer support containing a plurality of troughs which extend along the surface thereof; a plurality of heated elements disposed under the wafer support in the body wherein the heat generated from each of the heated elements is transferred to the wafer support; a gas line conmected to the wafer support for supplying gas to the plurality of troughs; means for supplying heat to the heated elements; and a controller connected to the heated elements for controlling the temperature of the heated elements.

Abstract: In a heater unit, comprising a lower metallic base, an upper metallic base placed closely over an upper surface of said lower base, and a resistance heater wire received in a groove defined between opposing surfaces of said lower and upper bases, ceramic powder is filled in said groove to keep said heater wire at least away from a wall surface of said groove. Thus, the heater wire can be directly installed in the groove of the base without the intervention of a sheath pipe so that the heater wire can be bent in a desired dense pattern, and the heater unit can be heated both rapidly and uniformly. Also, the ceramic powder filled in the groove improves the heat transfer, and this even further enhances the these advantages of the present invention.

Abstract: A sealing terminal includes internal connection lines which are connected to heating elements and external connection lines via which power is supplied. A quartz glass body includes a plurality of grooves in its outer surface to retain the internal and external connection lines in place. Conductive foils are used to connect the internal and external lines which are housed in a quartz glass tube so that the ends of the lines project out of the respective ends thereof. A plug is disposed in the lower end of the tube to close the same. Spark generation is prevented while a low electrical resistance sealed terminal which is simple in structure and quick and easy to assemble, results.

Abstract: A heater including a substrate having a heating surface to treat a substance to be heated on the substrate, a heating element embedded in the substrate, and a resistance control part. The substrate includes a first ceramic material and the resistance control part includes a second ceramic material which has higher volume resistivity than that of the first ceramic material.

Abstract: A system and method for thermally processing a substrate. A substrate is heated to a processing temperature at which the substrate is susceptible to plastic deformation or slip. An insulating cover may be removed to initially cool the substrate below such temperature before removal from the system. Gas pressure may also be adjusted to enhance heat transfer during processing and decrease heat transfer prior to removal of the substrate. Susceptors or surfaces for cooling the substrate may also be included in the system. The substrate may be transferred from a heating surface to a cooling surface by moving or rotating the substrate through warm transitional regions to avoid slip.

Abstract: A CVD processing reactor employs a pyrometer to control temperature ramping. The pyrometer is calibrated between wafer processing by using a thermocouple that senses temperature during a steady state portion of a processing operation.

Abstract: A heat treating apparatus comprises a hot plate having a top surface on which is placed a substrate that is to be subjected to a heat treatment, setting means for setting an original target temperature of the hot plate required for subjecting the substrate to a heat treatment, a heat energy supply source for supplying a heat energy to the hot plate, a sensor for detecting the temperature of the hot plate, and control means receiving a detection signal from the sensor to obtain a difference in the detected temperature of the hot plate between the state that the substrate is not placed on the hot plate and the state that the substrate is placed on the hot plate, the original target temperature being switched based on the difference, and a signal denoting the switched target temperature in place of the original target temperature being supplied from the control means to the heat energy supply source.

Abstract: An exhaust hole has a size covering not only a first region above a hot plate but also a second region surrounding the first region. A plate ember with a plurality of openings is disposed at the mouth of the exhaust hole. The exhaust hole exhausts air from the first region and the second region, even when the heat processing is not performed. Therefore, a solvent volatilized in the first region is also exhausted from the second region and will not leak outside the apparatus.

Abstract: A heat exchanger apparatus including a heat exchange element and a substrate support. A clamp member is coupled to the heat exchange element and the substrate support by expanding the clamp member to an expanded state sufficient to surround a portion of the substrate support and the heat exchange element, and contracting the clamp member to couple the clamp member to the substrate support.

Abstract: An upper metallic base is placed over a lower metallic base with a resistance heater element interposed between them so as to cause a plastic deformation to at least one of the opposing surfaces until the corresponding surfaces conform to an outer profile of the heater element, and the opposing surfaces of the lower and upper bases, and the resistance heater element are substantially entirely bonded to one another by a metallic bonding which may consist of brazing, soldering or diffusion bonding. Because the metallic bonding provides a favorable heat conduction, and can thereby improve the thermal efficiency and prevent local heating, a rapid temperature rise and uniform heating are made possible. Because the base consists of two parts, the material for the base can be selected from a wide range of materials including those capable of withstanding high temperatures and corrosive materials.