Abstract: A pixel includes a first electrode layer on an exposed surface of an interconnection structure and in contact with a conductive element of the interconnection structure. An insulating layer extends over the first electrode layer and includes opening crossing through the insulating layer to the first electrode layer. A second electrode layer is on top of and in contact with the first electrode layer and the insulating layer in the opening. A film configured to convert photons into electron-hole pairs is on the insulating layer, the second electrode layer and filling the opening. A third electrode layer covers the film.

Abstract: Technologies and techniques for providing a current brightness value relating to an ambient brightness, wherein at least one first raw brightness value and temporally thereafter at least one second raw brightness value are detected using at least one brightness sensor. An averaging may be carried out at least for the at least one second raw brightness value together with at least the at least one first raw brightness value, and a result of the averaging being provided as a current mean brightness value. A gradient limitation is carried out for the current mean brightness value, in which a deviation of the current mean brightness value from at least one previously provided brightness value is limited to at least one maximum permissible amount if the deviation of the current brightness mean value from the at least one previously provided brightness value is greater than the at least one maximum permissible amount.

Abstract: Embodiments of the present disclosure relate to a system, a software application, and a method of a lithography process to update one or more of a mask pattern, maskless lithography device parameters, lithography process parameters utilizing a file readable by each of the components of a lithography environment. The file readable by each of the components of a lithography environment stores and shares textual data and facilitates communication between of the components of a lithography environment such that the mask pattern corresponds to a pattern to be written is updated, the maskless lithography device of the lithography environment is calibrated, and process parameters of the lithography process are corrected for accurate writing of the mask pattern on successive substrates.

Abstract: A system for determining the distance or range from a LIDAR device and the wind direction uses optics configured in the Scheimpflug condition to establish range from the LIDAR to the atmosphere being measured. This LIDAR embodiment uses correlation techniques to establish wind speed and direction. Multiple laser beam lines of sight are required to determine wind direction and speed.

Abstract: Method for a printing system for processing a print job comprising the print data and the plurality of print job settings. Automatically an area of the recording medium is established that is deemed to be removed or made invisible during the at least one finishing action by a finisher. A digital object is retrieved from memory of the printer which is used for checking and monitoring at least one characterization of the desired end product. The print data are printed and also the digital object is printed at the automatically established area.

Abstract: A solid-state imaging apparatus includes a pixel circuit and a negative feedback circuit. The pixel circuit includes: a photodiode; a charge storage that holds a signal charge generated by the photodiode; an amplification transistor that outputs a pixel signal corresponding to the signal charge in the charge storage; a first reset transistor that resets the charge storage; a first storage capacitive element for holding a signal charge; and a first transistor that controls the connection between the charge storage and the first storage capacitive element. The negative feedback circuit negatively feeds back a feedback signal corresponding to a reset output of the amplification transistor to the charge storage via the first reset transistor.

Abstract: The photoelectric conversion device includes a plurality of pixels arranged to form a plurality of columns, a plurality of AD conversion circuits provided corresponding to the plurality of columns, and a control circuit configured to control the AD conversion circuits. The plurality of pixels includes an OB pixel arranged in a first column and an effective pixel arranged in a second column. The plurality of AD conversion circuits each include a first AD conversion circuit including a first comparator receiving a signal of the OB pixel, and a second AD conversion circuit including a second comparator receiving a signal of the effective pixel. The control circuit controls the first and second comparators such that the result of the AD conversion by the first AD conversion circuit is determined earlier than the result of the AD conversion by the second AD conversion circuit for signals of the same level.

Abstract: Imaging elements and imaging devices are disclosed. In one example, a potential of a charge retaining unit that retains a charge generated by photoelectric conversion is adjusted. An imaging element includes a photoelectric conversion unit, a charge retaining unit, a charge transfer unit, a reset unit, an image signal generating unit that generates an image signal, capacitive coupling wiring, and a potential adjustment unit. The capacitive coupling wiring is different from wiring that transmits control signals of the charge transfer unit, the reset unit, and the image signal generating unit and wiring that transmits a generated image signal and is capacitively coupled to the charge retaining unit. The potential adjustment unit applies an adjustment signal for adjusting the potential of the charge retaining unit via the capacitive coupling wiring.

Abstract: An image sensor may be implemented by mounting a first die to a second die. The first die may include an image sensor pixel array having active pixels and non-active pixels, while the second die may include pixel control and readout circuitry that are coupled to the image sensor pixel array via inter-die connections. The image sensor pixel array may have pixel columns in excess of corresponding column readout paths in the pixel readout circuitry and/or pixel rows in excess of corresponding sets of row control paths in the pixel control circuitry. A select set of inter-die connections may be implemented to provide connections between a desired set of pixel columns and the limited number of column readout paths and to provide connections between a desired set of pixel rows and the limited number of sets of row control paths.

Abstract: Systems and methods are disclosed to enable fast readout from an image sensor to support pixel-wise conversion gain selection for high dynamic range imaging. In embodiments, an image sensor integrated circuit performs the pixel-wise gain selection with its readout circuitry, so that the image sensor outputs pixels with only the selected gain option. In this manner, the image sensor is able to achieve faster frame rates and lower power consumption. Depending on the embodiment, the conversion gain may be selected by the readout logic, an image signal processor, or an auto-exposure engine. The gain selection may be made based on a previous image captured by the camera or other pixels in the same image. The image signal processor may interpolate a high-gain and a low-gain portion of the image to obtain full resolution images in the two gain options, and merge the two to obtain the final image.

Abstract: An image sensor includes a first semiconductor substrate provided with a pixel, including a photoelectric conversion unit that photoelectrically converts incident light to generate an electric charge, an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit, and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, and a second semiconductor substrate provided with a supply unit for the pixel, the supply unit supplying the transfer unit with a transfer signal to transfer the electric charge from the photoelectric conversion unit to the accumulation unit.

Abstract: Theft deterrent systems and methods using onboard weight sensors are disclosed herein. An example method can include obtaining an image of a location where a scale is located in a vehicle, the scale being used for cargo weight measurement, determining from the image, when the location of the scale is located is empty, determining a weight value output by the scale, determining an offset for the scale when the weight value is greater than a weight threshold, and adjusting the scale using the offset to zero the scale.

Abstract: Described herein is an optical sensor, a detector including the optical sensor for an optical detection of at least one object, a method for manufacturing the optical sensor and various uses of the optical detector. The optical sensor can be supplied as a non-bulky hermetic package which provides an increased degree of protection against possible degradation by humidity and/or oxygen over long terms. Further, the optical sensor may be easily manufactured and integrated on a circuit carrier device.

Abstract: Image deterioration in an image sensor is inhibited. A solid-state imaging device includes: a pixel array that photoelectrically converts received light and contains pixels arranged in a two-dimensionally arrayed manner, the pixels outputting analog signals; a conversion part that converts the analog signals outputted from the pixels to digital data; a coding part that generates one sign bit or a plurality of sign bits as to the digital data; a storage part that stores the digital data and the sign bit or sign bits; a decoding part that decodes the sign bit or sign bits as to the digital data stored in the storage part; a determination part that determines, on the basis of the decoded sign bit or sign bits, whether or not an error in writing or reading of the digital data in or from the storage part has occurred; and a signal processing part that processes the digital data read from the storage part on the basis of output of the determination part.

Abstract: An image sensor includes a substrate including a first surface on which light is incident and a second surface opposite to the first surface, unit pixels in the substrate, each including a photoelectric conversion layer, color filters on the first surface of the substrate, a grid pattern on the first surface of the substrate defining a respective light receiving area of each of the unit pixels, and microlenses on the color filters, each of the microlenses corresponding to a respective one of the unit pixels, wherein the unit pixels include a first pixel and a second pixel sharing a first color filter which is one of the color filters, and a first light receiving area of the first pixel is different from a second light receiving area of the second pixel.

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, multiple rings of isolation structures may be formed around the SPAD. An outer deep trench isolation structure may include a metal filler such as tungsten and may be configured to absorb light. The outer deep trench isolation structure therefore prevents crosstalk between adjacent SPADs. Additionally, one or more inner deep trench isolation structures may be included. The inner deep trench isolation structures may include a low-index filler to reflect light and keep incident light in the active area of the SPAD.

Abstract: An image sensor includes a first column line and a second column line configured to extend in a first direction, a plurality of pixel groups configured to connect to the first column line or the second column line and to comprise a plurality of pixels in each of the plurality of pixel groups, a bias circuit configured to comprise a first current circuit and a second current circuit configured to output different bias currents in a first operational mode, and a switching circuit configured to connect the first column line to the first current circuit and connect the second column line to the second current circuit during a first time period, and to connect the first column line to the second current circuit and connect the second column line to the first current circuit during a second time period subsequent to the first time period in the first operational mode.

Abstract: An image sensor includes: a readout circuit that reads out a signal to a signal line, the signal being generated by an electric charge resulting from a photoelectric conversion; a holding circuit that holds a voltage based on an electric current from a power supply circuit; and an electric current source including a transistor having a drain part connected to the signal line and a gate part connected to the holding circuit and the drain part, the electric current source supplying the signal line with an electric current generated by the voltage held in the holding circuit.

Abstract: A photoelectric conversion apparatus includes a plurality of pixels each including a first avalanche photodiode and a second avalanche photodiode having a light-receiving surface area size different from a light-receiving surface area size of the first avalanche photodiode. The first avalanche photodiode is connected between a first waveform shaping circuit and a first switch. The second avalanche photodiode is connected between a second waveform shaping circuit and a second switch. An inverter circuit is connected between a control node of the first switch and a control node of the second switch.

Abstract: An imaging device including a photoelectric converter that generates signal charge; a charge storage region that stores the signal charge; a first transistor that has a gate coupled to the charge storage region and reads out the signal charge; a second transistor that has a source and a drain, an output of the first transistor being fed back to one of the source and the drain and being supplied to the charge storage region from the other of the source and the drain; and voltage supply circuitry that supplies voltages varying with time. In a reset operation for discharging the signal charge stored in the charge storage region, the voltage supply circuitry supplies the voltages to a gate of the second transistor.

Abstract: A photoelectric conversion apparatus includes a pad, a first protection circuit provided on a first semiconductor substrate, and a second protection circuit provided on a second semiconductor substrate. The first semiconductor substrate, which includes a plurality of photoelectric conversion units each receiving incident light and generating signal charge, and the second semiconductor substrate, which includes at least one signal processing circuit that processes an input signal based on the generated signal charge, are laminated. The pad receives a power supply voltage as input from an outside of the photoelectric conversion apparatus. At least one of the first protection circuit or the second protection circuit is provided on an outside of a region in which the pad is provided, in planar view. At least one of the first protection circuit or the second protection circuit is connected to the pad.

Abstract: An image forming system including: a conveyance unit configured to convey a first sheet on which an image has been formed by an image forming portion; a reading unit including a reading sensor configured to read the first sheet being conveyed by the conveyance unit through a transparent member at a reading position; a guide member configured to cover a reference member on a side opposite to the reading sensor with respect to the transparent member; and a controller configured to perform shading correction on a result of reading the first sheet based on image data obtained by the reading unit reading the reference member through the transparent member, and to control, based on an image subjected to the shading correction, a geometric characteristic of an image to be formed on a second sheet by the image forming portion.

Abstract: A circuit substrate to be laminated on another substrate includes a plurality of signal lines, a plurality of input portions respectively connected to the plurality of signal lines, and each configured to receive a signal from an outside of the circuit substrate, a plurality of signal processing circuits respectively connected to the plurality of input portions via the plurality of signal lines, and a plurality of transistors configured to supply a predetermined voltage to the plurality of signal lines in a state where no signal is input to the plurality of input portions from the outside. A part of the plurality of transistors is connected to a first control line, and another part of the plurality of transistors is connected to a second control line different from the first control line.

Abstract: A memory device includes a memory die bonded to a logic die via a wafer-on-wafer bond. A controller of the memory device that is coupled to the memory die can activate a row of the memory die. Responsive to activating the row, a sense amplifier stripe of the memory die can latch a first plurality of signals. A transceiver can route a second plurality of signals from the sense amplifier stripe to the logic die.

Abstract: An imaging device includes a first substrate, a second substrate, a third substrate, and a switching unit. The first substrate has a pixel including a photodiode and floating diffusion that holds the charge converted by the photodiode. The second substrate has a pixel circuit that reads out a pixel signal based on the charge held in the floating diffusion in the pixel, and is stacked on the first substrate. The third substrate has a processing circuit that detects a pixel signal read out by the pixel circuit, and is stacked on the second substrate. The switching unit is provided to enable electrical connection between the floating diffusion and a floating diffusion of another pixel in the first substrate, and is provided on the second substrate. As a result, by switching the capacitance of the floating diffusion of the pixel using floating diffusion of another pixel, it is possible to switch the charge-voltage conversion efficiency levels.

Abstract: The disclosure extends to systems and methods for reducing the area of an image sensor by employing bi-directional pads used for both image data issuance and configuration command reception and internal supply voltage generation, for reducing the number of conductors in an endoscope system.

Abstract: Power consumption is reduced in a solid-state imaging element that amplifies a voltage for each column. The solid-state imaging element includes a pixel circuit, an input transistor, a reference side current source, and a feedback circuit. The pixel circuit generates an input voltage by photoelectric conversion. The input transistor outputs an output voltage depending on a voltage between a source to which the input voltage is input and a gate from a drain. The reference side current source is connected to a reference node at a predetermined reference voltage and supplies a predetermined current. The feedback circuit feeds back a part of the current to the gate of the input transistor.

Abstract: An object is to improve the reliability of output information by simplifying a wiring route. A radiation image sensor includes a radiation detector in which a plurality of pixels of a charge generator for generating a charge corresponding to energy or the number of particles of incident radiation and a plurality of read circuits for outputting a digital value based on the charge generated by each pixel of the charge generator are mutually stacked and two-dimensionally disposed, and a circuit board on which a plurality of radiation detectors is disposed, in which the plurality of read circuits of one radiation detector is configured to transfer data indicating a digital value in the plurality of read circuits and then output the data to another adjacent radiation detector in response to a control signal from the outside.

Abstract: A first substrate having a plurality of photoelectric transducers formed on the first substrate, a second substrate having a pixel transistor for each of sets of two or more of the photoelectric transducers as a constituent unit, the pixel transistor being shared by the set and formed on the second substrate, and a second wiring which is connected to a first wiring formed on the second substrate via one contact, and is connected to a plurality of first elements, the first wiring leading to a second element shared by a plurality of first elements among a plurality of elements formed on the first substrate, each of the plurality of first elements being formed for each of the photoelectric transducers are included.

Abstract: A solid-state imaging element and an electronic device are provided. A pixel at least includes a photoelectric conversion unit that performs photoelectric conversion, an FD unit to which charge generated in the photoelectric conversion unit is transferred, and an amplification transistor that has a gate electrode to which the FD unit is connected. A reference signal is input to a MOS transistor. The reference signal is referred to when AD conversion is performed on a pixel signal according to an amount of light received by the pixel. Then, a shared structure is employed in which a predetermined number of pixels share an AD converter that includes a differential pair including the MOS transistor and the amplification transistor. Each of the pixels is provided with a selection transistor that is used to select a pixel for which AD conversion is performed on the pixel signal.

Abstract: An electronic panel includes: a base substrate; a first sensor including a first sensing electrode on the base substrate, a second sensing electrode spaced apart from the first sensing electrode, a first sensing line connected to the first sensing electrode, and a second sensing line connected to the second sensing electrode; and a second sensor including an additional sensing electrode spaced apart from the first sensing electrode and the second sensing electrode, wherein the additional sensing electrode overlaps the first sensing line on a plane.

Abstract: A method and system for measuring strain in a 3D printed part is disclosed herein. The printed part can be formed with internal features that can be analyzed with a digital image correlation system to determine strain levels in internal regions of the part. The features are visually identifiable due to a different color, shape, design or other visually distinguishable characteristics relative to that of the base structural material. The features can be the formed from the same material or a different material from that of the base structure material.

Abstract: Solid-state imaging elements are disclosed. In one example, a solid-state imaging element includes a plurality of pixels. A pixel signal line transmits a pixel signal of a pixel, a reference signal line transmits a reference signal to be compared with the pixel signal, a first comparator outputs a first output signal according to the pixel signal on the basis of a voltage difference between the pixel signal and the reference signal, a second comparator outputs a second output signal according to the pixel signal on the basis of the voltage difference between the pixel signal and the reference signal, a first capacitor unit between the pixel signal line or the reference signal line and the first comparator and set to a first gain, and a second capacitor unit between the pixel signal line or the reference signal line and the second comparator and set to a second gain.

Abstract: A computing system including a processing circuit in communication with a camera having a field of view. The processing circuit obtains image information based on the objects in the field of view and defines a minimum viable region for a target open corner. Potential minimum viable regions are defined by identifying candidate edges of an object and determining potential intersection points based on the candidate edges. The minimum viable region may then be identified and validated from the potential minimum viable regions.

Abstract: Please replace the currently pending Abstract with the following amended A solid-state imaging device is provided with a plurality of photoelectric conversion elements, a plurality of current-voltage conversion circuits, a plurality of address event detection circuits, first ground wiring, and second ground wiring. The plurality of photoelectric conversion elements is arranged side by side in a first region. The plurality of current-voltage conversion circuits converts currents output from the plurality of photoelectric conversion elements into voltages, respectively. The plurality of address event detection circuits detects changes in voltages output from the plurality of current-voltage conversion circuits, respectively. The first ground wiring is provided in a second region located outside the first region, and supplies first ground potential to the plurality of photoelectric conversion elements.

Abstract: A photosensitive device including a microlens substrate, a photosensitive element substrate, and an optical glue is provided. The microlens substrate includes a first substrate and microlenses. The first substrate has a first side and a second side opposite to the first side. The microlenses are located on the first side of the first substrate. The photosensitive element substrate includes a second substrate, active components, first electrodes, a second electrode, and an organic photosensitive material layer. The second substrate has a third side and a fourth side opposite to the third side. The second side of the first substrate faces the third side of the second substrate. The active components are located on the fourth side of the second substrate. The first electrodes are respectively electrically connected to the active components. The organic photosensitive material layer is located between the first electrodes and the second electrode.

Abstract: Disclosed is an image sensor including a pixel array including a plurality of unit pixel circuits arranged in a grid structure, and a plurality of switch circuits suitable for selectively coupling floating diffusion nodes included in the respective unit pixel circuits arranged in a vertical direction among the plurality of unit pixel circuits, wherein an arrangement pattern of pixels included in each of the plurality of unit pixel circuits is different from an arrangement pattern of color filters of the pixel array.

Abstract: An imaging device includes: a solid-state imaging element having a plurality of pixel cells arranged in a matrix; and a signal processing part configured to process a detection signal outputted from each of the pixel cells. The pixel cells each include an avalanche photodiode and output a voltage corresponding to a count number of photons received by the avalanche photodiode as the detection signal. The signal processing part includes a variation calculation part configured to calculate a variation between the pixel cells in the detection signal outputted from each of the pixel cells, and a correction calculation part configured to correct the detection signal outputted from each of the pixel cells, on the basis of the variation calculated by the variation calculation part.

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. The light scattering structures may include a low-index material formed in trenches in the semiconductor substrate. One or more microlenses may focus light onto the semiconductor substrate. Areas of the semiconductor substrate that receive more light from the microlenses may have a higher density of light scattering structures to optimize light scattering while mitigating dark current.

Abstract: A method for brightness and color correction of image data of a line camera is disclosed, wherein, for the detecting of image data with at least two line arrays of the line camera while illuminating a detection area of the line camera with an illumination module, a gray-scale image and at least two single-color images are recorded, and the image data is corrected with the help of a brightness function of the illumination module which is dependent on a line position of the line array and/or a distance of recorded objects. The brightness function is determined for the illumination module in advance and independent of the line camera and is stored in the illumination module, and the brightness function is read out by the line camera and used for the respective correction of the gray-scale image and the single-color images.

Abstract: A method includes acquiring range data and intensity data of a first image frame captured at a high illumination, the first image frame including an image of a high-reflectivity object and a low-reflectivity object, the image of the high-reflectivity object being saturated; acquiring range data intensity data of a second image frame captured at a reduced illumination, the second image frame including an image of the high-reflectivity object, with the low-reflectivity object being invisible; and identifying a saturation region on the first image frame. The method further includes performing a cross-correlation operation between the identified saturation region and a corresponding region on the second image frame to identify a region in the saturation region, the identified region corresponding to an expected size of the high-reflectivity object on the first image frame; and replacing the identified region in the saturation region with a corresponding region in the second image frame.

Abstract: Systems and methods are provided to capture objects with different levels of reflectivity. In one embodiment, the LiDAR device can sequentially illuminate a scene with a high-reflectivity object and a low-reflectivity using laser pulses that differ by one or more order magnitude. The LiDAR device can use cross-correlation to combine the image frame with one or more image frames that each are captured at a reduced illumination to obtain a composite image frame. The composite image frame can show both the high-reflectivity object and the low-reflectivity object at their expected size with increased dynamic range.

Abstract: A LIDAR system includes an emitter array configured to illuminate a field of view, a detector array configured to image the field of view, and a control circuit. The emitter array includes one or more emitter elements that are configured to emit respective optical signals responsive to respective emitter control signals. The detector array includes one or more detector elements configured to output respective detection signals responsive to light incident thereon. The control circuit is configured to generate the respective emitter control signals based on the respective detection signals and respective spatial correlations of the one or more emitter elements and the one or more detector elements with respect to the field of view. Related devices and methods of operation are also discussed.

Abstract: Various embodiments of the present technology may provide methods and apparatus for a track-and-hold amplifier configured to sample and amplify an analog signal. Methods and apparatus for a track-and-hold amplifier according to various aspects of the present invention may provide an isolation circuit configured to isolate transient current in a track-and-hold capacitor during a track phase. According to various embodiments, selective activation of the isolation circuit provides a settling time that is independent of the gain of the amplifier.

Abstract: An image sensor includes: (1) a first pixel and a second pixel each including: a photoelectric conversion unit that photoelectrically converts light and generates an electric charge; and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to an accumulation unit that accumulates the electric charge, the first pixel and the second pixel being arranged in a row direction; (2) a first supply unit that supplies a signal which controls the transfer unit of the first pixel; and (3) a second supply unit that supplies a signal which controls the transfer unit of the second pixel.

Abstract: An exterior camera system and a cleaning method thereof are provided. The exterior camera system includes a base unit that is fixed to a vehicle, a housing rotatably coupled with the base unit, and an imaging device including a camera module and having at least a portion inserted into the housing to move in a longitudinal direction of the housing. A wiper is disposed on an inside surface of the housing to face the camera module, and a washer fluid nozzle is disposed adjacent to the wiper. A controller receives a video from the camera module to set a rotation angle of the housing based upon driving conditions of the vehicle and to adjust extension of the imaging device.

Abstract: Among other things, we describe systems and method for validating sensor calibration. For validating calibration of a system of sensors having several types of sensors, an object may be configured to have a substantially reflective portion such that the sensors can isolate the substantially reflective portion, and their sensor data can be compared to determine, if the detected locations of the substantially reflective portion by each sensor are aligned. For calibrating a system of sensors, an object having known calibration features can be used and detected by each sensor, and the detected data can be compared to known calibration data associated with the object to determine if each sensor is correctly calibrated.

Abstract: An imaging system includes a lighting controller for independently controlling emission of illumination light to be emitted by a light source in: (i) a non-all-line exposure period, which contains a reading period in which electrical signals are sequentially read out on a horizontal-line basis from an image sensor for one frame or one field period, and in which at least one horizontal line of the horizontal lines for the one frame or the one field period is not exposed to light, and (ii) in an all-line exposure period, in which all of the horizontal lines for the one frame or the one field period are exposed to light.

Abstract: A sensor fabricated from a plurality of layers on a semiconductor wafer. The sensor comprises a plurality of sensor elements arranged in stitching blocks and having a plurality of vertically arranged read-out lines, a plurality of vertically arranged select/reset lines, and a plurality of horizontally arranged select/reset lines, running from a right-hand edge to an oppositely disposed left hand edge and being connected to ones of the plurality of vertically arranged select/reset lines, plurality of read-out circuits connected to the plurality of vertically arranged read-out lines, and ones of the plurality of vertically arranged read-out lines swerve at one of the bottom or top edges of the stitching blocks, such that ones of the plurality of vertically arranged read-out lines in a first one of the plurality of stitching blocks connect to a displaced one of the vertical lines in a second abutting one of the plurality of stitching blocks.

Abstract: A solid-state imaging device comprising: a pixel array including pixels arranged in a plurality of rows and in a plurality of columns; a first column circuit group; a second column circuit group disposed in the same side with respect to the pixel array as that in which the first column circuit group is disposed; a first counter configured to supply a count signal to the first column circuit group; and a second counter configured to supply a count signal to the second column circuit group, wherein the first column circuit group and the second column circuit group are arranged to be separate from each other in a direction along the columns, wherein the first column circuit group and the second column circuit group are configured to process pixel signals for different colors.