Abstract: A pixel for an image sensor includes a microbolometer sensor portion, a visible image sensor portion and an output path. The microbolometer sensor portion outputs a signal corresponding to an infrared (IR) image sensed by the microbolometer sensor portion. The visible image sensor portion outputs a signal corresponding to a visible image sensed by the visible image sensor portion. The output path is shared by the microbolometer and the visible image sensor portions, and is controlled to selectively output the signal corresponding to the IR image or the signal corresponding to the visible image. The output path may be further shared with a visible image sensor portion of an additional pixel, in which case the output path may be controlled to selectively to also output the signal corresponding to a visible image of the additional pixel.

Abstract: A wheel speed sensor for a utility vehicle, including: an active pulse sensor, a housing to at least partially enclose the active pulse sensor, and a protective cap to at least partially cover the housing; in which the wheel speed sensor has at least one component to adapt a temperature resistance capability of the wheel speed sensors so that the wheel speed sensor is usable in a high temperature environment.

Abstract: In particular embodiments, the touch-sensing apparatus comprises: (1) a display panel; (2) a glass plate; and (3) a frame assembly. In various embodiments, the frame assembly is configured to support the display panel and the plate. The frame assembly may include any suitable bracket or combination of brackets (e.g., or other suitable assembly mechanism) configured to maintain and mount each of the plate and display panel in a suitable position. In particular embodiments, the frame assembly is configured to support the plate adjacent the display panel such that the plate is positioned in front of the display panel. In particular embodiments, the glass plate is convex such that the plate curves at least partially outwardly from the frame assembly. The apparatus may further comprise a plurality of infrared sensors and emitters disposed in a bezel of the frame assembly and configured to detect touch inputs at the convex plate.

Abstract: A multilayer conductive line is disclosed. The multilayer conductive line includes a dielectric layer, a Ta barrier layer on the dielectric layer and a superlattice on the Ta barrier layer. The superlattice includes a plurality of interleaved ferromagnetic and non-ferromagnetic material.

Abstract: A pixel for an image sensor includes a microbolometer sensor portion, a visible image sensor portion and an output path. The microbolometer sensor portion outputs a signal corresponding to an infrared (IR) image sensed by the microbolometer sensor portion. The visible image sensor portion outputs a signal corresponding to a visible image sensed by the visible image sensor portion. The output path is shared by the microbolometer and the visible image sensor portions, and is controlled to selectively output the signal corresponding to the IR image or the signal corresponding to the visible image. The output path may be further shared with a visible image sensor portion of an additional pixel, in which case the output path may be controlled to selectively to also output the signal corresponding to a visible image of the additional pixel.

Abstract: Disclosed herein are devices, systems, and methods that provide improved tunneling magnetoresistance (TMR) through the use of innovative device structures and heterostructure layers therein. Particularly, two or more magnetic layers form a heterostructure core of the switching device, with control of current passing through the heterostructure determined by an applied magnetic field that modifies the magnetization of the heterostructure from a ground magnetic state that is layered antiferromagnetic.

Abstract: Provided are a terahertz wave detection device and a terahertz wave detection system to execute checking at high speed with high sensitivity and accuracy and to execute omnidirectional inspection without requiring a large checking system. A flexible array sensor (30) includes: a terahertz wave detection element (10) having a flexible single-walled carbon nanotube film (11), and a first electrode (12) and a second electrode (13) disposed to face each other on a two-dimensional plane of the single-walled carbon nanotube film (11); and a flexible substrate (20) having flexibility to support the terahertz wave detection element (10) so as to be freely curved. The flexible substrate (20) is preferably formed in a curved or cylindrical shape, so that the terahertz wave detection elements (10) are arrayed on the flexible substrate 20 formed in a curved or cylindrical shape.

Abstract: A thermal pattern sensor including a plurality of pixels arranged on a substrate. Each pixel has a pyroelectric capacitance formed by at least one pyroelectric material portion arranged between a lower electrode and an upper electrode. The sensor has an abrasion-resistance coating, located on the side opposite the substrate and including pillars embedded in an abrasion-resistance layer, the pillars having a thermal conductivity strictly higher than that of the abrasion-resistance layer. A high thickness of the anti-abrasion protection coating can be achieved with a high rate of thermal transfer through the latter.

Abstract: An embodiment of a path length calibration system is described that comprises a swing arm coupled to a first surface; a base coupled to a second surface configured to receive the sample; a position sensor system comprising a first component coupled to the swing arm and a second component coupled to the base, wherein the position sensor system is configured to provide an output voltage when the swing arm is in a down position; and a processor configured to calibrate a zero path length using the output voltage.

Abstract: An imaging sensor produces spatiotemporal measurement sets of distinct sensing zones of the imaging sensor. A multifocal lens directs electromagnetic radiation from distinct three-dimensional spatial zones to distinct sensing zones. A focus analyzer processes the spatiotemporal measurement sets to determine a sequence of in-focus status of the distinct sensing zones independent of other distinct sensing zones. A displacement processor generates object displacement vector(s) based on a sequence of in-focus status indicative of an object moving between distinct three-dimensional spatial zones.

Abstract: A method reading a magnetic-field sensor provided with at least one first magnetoresistive element envisages generation of an output signal, indicative of a magnetic field, as a function of a detection signal supplied by the magnetic-field sensor. The reading method envisages: determining an offset signal present in the output signal; generating at least one compensation quantity as a function of the offset signal; and feeding back the compensation quantity at input to the reading stage so as to apply a corrective factor at input to the reading stage as a function of the compensation quantity, such as to reduce the value of the offset signal below a given threshold.

Abstract: The present invention pertains to the use of mobile coherent interfaces in a ferroelectric material to interact with optical phonons and, ultimately, to affect the material's optical properties. In altering the optical phonon properties, the optical properties of the ferroelectric material in the spectral range near-to the phonon mode frequency can dramatically change. This can result in a facile means to change to the optical response of the ferroelectric material in the infrared.

Abstract: A depth sensor comprises at least one imaging sensor, at least one multifocal lens, and a focus analyzer. The depth sensor analyzes the in-focus status of electromagnetic radiation, directed by the multifocal lens(es) onto sensing zone(s) of the imaging sensor(s) from spatial zone(s) in a measurement field, to detect the presence of object(s) in the spatial zone(s).

Abstract: Examples are generally described that include monitoring an electrocaloric effect device. A varying voltage may he applied across an electrocaloric effect material. A capacitance change of the electrocaloric effect material at least in part responsive to the varying voltage may be measured. A temperature change of the electrocaloric effect material may be calculated based, at least in part, on the capacitance change.

Abstract: A method for converting heat to electric energy is described which involves thermally cycling an electrically polarizable material sandwiched between electrodes. The material is heated using thermal energy obtained from: a combustion reaction; solar energy; a nuclear reaction; ocean water; geothermal energy; or thermal energy recovered from an industrial process. An apparatus is also described which includes an electrically polarizable material sandwiched between electrodes and a heat exchanger for heating the material. The heat source used to heat the material can be: a combustion apparatus; a solar thermal collector; or a component of a furnace exhaust device. Alternatively, the heat exchanger can be a device for extracting thermal energy from the earth, the sun, ocean water, an industrial process, a combustion reaction or a nuclear reaction. A vehicle is also described which comprises an apparatus for converting heat to electrical energy connected to an electric motor.

Abstract: A sensor includes a first electrode, a second electrode, a ferroelectric element that is disposed between the first electrode and the second electrode and that has a ferroelectric film formed of a ferroelectric substance, and a detector configured to read an electric charge generated in the ferroelectric element. The detector performs reading by applying a first voltage for aligning polarization directions of the ferroelectric film and a second voltage for reversing polarization of at least part of the ferroelectric film whose polarization directions have been aligned.

Abstract: An infrared light detector including at least one sensor chip that has a layer element that is produced from a pyroelectrically sensitive material and further has a base electrode and a head electrode, to which the layer element is connected for tapping electric signals generated in the layer element by irradiation of the at least one sensor chip with light. The detector further includes a transimpedance amplifier for amplifying the signals with an operational amplifier, which is asymmetrically operated by a supply voltage source having a positive supply voltage and to the inverting input of which the base electrode is connected. At the voltage supply source, a voltage divider connected to ground is provided with a partial node, to which a partial voltage that is smaller than the supply voltage is applied and which is electrically coupled to the non-inverting input and to the head electrode.

Abstract: A sensor includes a first electrode, a second electrode, a ferroelectric element that is disposed between the first electrode and the second electrode and that has a ferroelectric film formed of a ferroelectric substance, and a detector configured to read an electric charge generated in the ferroelectric element. The detector performs reading by applying a first voltage for aligning polarization directions of the ferroelectric film and a second voltage for reversing polarization of at least part of the ferroelectric film whose polarization directions have been aligned.

Abstract: An infrared sensor according to the present invention includes a semiconductor substrate, a thin-film pyroelectric element made of lead titanate zirconate and disposed on the semiconductor substrate, a coating film coating the pyroelectric element and having a topmost surface that forms a light receiving surface for infrared rays, and a cavity formed to a shape dug in from a top surface of the semiconductor substrate at a portion opposite to the pyroelectric element and thermally isolates the pyroelectric element from the semiconductor substrate.

Abstract: A radiation detector is provided that includes a photodiode having a radiation absorber with a graded multilayer structure. Each layer of the absorber is formed from a semiconductor material, such as HgCdTe. A first of the layers is formed to have a first predetermined wavelength cutoff. A second of the layers is disposed over the first layer and beneath the first surface of the absorber through which radiation is received. The second layer has a graded composition structure of the semiconductor material such that the wavelength cutoff of the second layer varies from a second predetermined wavelength cutoff to the first predetermined wavelength cutoff such that the second layer has a progressively smaller bandgap than the first bandgap of the first layer. The graded multilayer radiation absorber structure enables carriers to flow toward a conductor that is used for measuring the radiation being sensed by the radiation absorber.

Abstract: The present invention is thus directed to an automated system and method of varying the optical path length in a sample that a light from a spectrophotometer must travel through. Such arrangements allow a user to easily vary the optical path length while also providing the user with an easy way to clean and prepare a transmission cell for optical interrogation. Such path length control can be automatically controlled by a programmable control system to quickly collect and stores data from different path lengths as needed for different spectrographic analysis. Such a methodology and system, as presented herein, is able to return best-match spectra with far fewer computational steps and greater speed than if all possible combinations of reference spectra are considered.

Abstract: Disclosed are tunable catalysts and methods of controlling the activity of a catalyst. For example, disclosed are methods of controlling the activity of a catalyst, comprising providing a catalyst, comprising a ferroelectric substrate of finite thickness comprising two opposing surfaces, the ferroelectric substrate being characterized as having a polarization; an electrode surmounting one of the surfaces of the ferroelectric substrate; and a catalytically active material surmounting the surface of the ferroelectric substrate opposing the electrode; and subjecting the ferroelectric substrate to a controllable electric field to give rise to a modulation of the polarization of the ferroelectric substrate, whereby the modulation of the polarization controllably alters the activity of one or more chemical species on the catalytically active material.

Abstract: The present invention aims to reduce a size and improve quality of an infrared sensor. An infrared sensor (203) according to the present invention includes a substrate (202) and an infrared detection element (201). A principal surface of the substrate (202) includes a convex shape. The infrared detection element (201) is formed over the principal surface including the convex shape of the substrate (202). Further, as for the infrared detection element (201), an entire light-receiving surface includes a planar shape. Then, it can be the small-sized infrared sensor (203) with improved quality.

Abstract: Disclosed herein is an intrusion detection apparatus which includes an infrared emission unit for emitting infrared beams and an infrared reception unit for receiving the infrared beams. The infrared emission unit adjusts an emission direction in which the infrared beams are emitted based on information received from the infrared reception unit, and adjusts an optical axis which is formed with the infrared reception unit depending on whether infrared beam values corresponding to the adjusted emission direction fall within the normal range. The infrared reception unit adjusts a detection direction in which the infrared beams are detected based on information received from the infrared emission unit, and adjusts an optical axis which is formed with the infrared emission unit depending on whether infrared beam values corresponding to the adjusted detection direction fall within the normal range. The intrusion into a relevant region is detected using the optical axis.

Abstract: An infrared light detector including at least one sensor chip that has a layer element that is produced from a pyroelectrically sensitive material and further has a base electrode and a head electrode, to which the layer element is connected for tapping electric signals generated in the layer element by irradiation of the at least one sensor chip with light. The detector further includes a transimpedance amplifier for amplifying the signals with an operational amplifier, which is asymmetrically operated by a supply voltage source having a positive supply voltage and to the inverting input of which the base electrode is connected. At the voltage supply source, a voltage divider connected to ground is provided with a partial node, to which a partial voltage that is smaller than the supply voltage is applied and which is electrically coupled to the non-inverting input and to the head electrode.

Abstract: An infrared ray detection element has a plurality of pyroelectric layers that are laminated in a same direction as an incident direction of infrared rays, one or more intermediate electrode layers laminated between the plurality of pyroelectric layers; a front side electrode layer that is laminated on a front side of the pyroelectric layer positioned at a top side; and a back side electrode layer that is laminated on a back side of the pyroelectric layer positioned at a bottom side. The two pyroelectric layers adjacent in a front and back direction are performed with a polarization process such that polarization directions thereof are set to reverse directions to each other.

Abstract: A system for detecting radiation using an array of cells containing a metastable material together with sensing apparatus and display apparatus.

Abstract: A method for converting heat to electricity by exploiting changes in spontaneous polarization that occur in electrically polarizable materials is described. The method uses an internally generated field to achieve poling during cycling. The internal poling field is produced by retaining residual free charges on the electrodes at the appropriate point of each cycle. The method obviates the need for applying a DC voltage during cycling and permits the use of the electrical energy that occurs during poling rather than an external poling voltage which detracts from the net energy produced per cycle. The method is not limited to a specific thermodynamic cycle and can be used with any thermodynamic cycle for converting heat to electricity by thermally cycling electrically polarizable materials. The electrical energy generated can be used in various applications or stored for later use. An apparatus for converting heat to electricity is also described.

Abstract: A method for converting heat to electricity is described. The method can be used to efficiently and economically generate electricity from thermal energy directly through ferroelectric or other polarizable materials without the need for first converting thermal energy to mechanical energy or to any other form of energy or work. The method can involve subjecting a polarizable material to a thermodynamic cycle having two isothermal steps and two steps that occur at constant polarization. In an ideal implementation, this thermodynamic cycle allows the conversion of heat to electricity at the ultimate Carnot limit. The ferroelectric material can be continuously cycled in and out of its ferroelectric phase while heat is continuously converted to electricity at high voltage. The electrical energy so generated can be used in a virtually unlimited range of different applications or be stored for later use. An apparatus for converting heat to electricity is also described.

Abstract: A digital-to-analog (DA) converter includes: an analog output section that generates an output current corresponding to a value of a digital signal in response to a bias voltage and outputs an analog signal which is obtained from the output current by current-to-voltage conversion; a current source; a current control section that converts a current from the current source to a voltage signal and outputs the voltage signal as the bias voltage; and a sample and hold circuit section that samples and holds the bias voltage from the current control section and supplies the held bias voltage to the analog output section.

Abstract: A detector for electromagnetic radiation such as millimeter wave and infrared employs a ring-shaped ferroelectric element having a temperature affected by an absorber for the radiation. The dielectric constant of the ferroelectric material is a strong function of the temperature near its Curie temperature. The resonant frequency of the ferroelectric element is detected by applying a swept-frequency signal to the circuit and detecting the frequency which enhances the energy of the pulse. A two-dimensional camera for the radiation employs a two-dimensional array of these ferroelectric resonant circuits and a system for rapidly interrogating their resonant frequencies on a sequential basis.

Abstract: The present invention aims to reduce a size and improve quality of an infrared sensor. An infrared sensor (203) according to the present invention includes a substrate (202) and an infrared detection element (201). A principal surface of the substrate (202) includes a convex shape. The infrared detection element (201) is formed over the principal surface including the convex shape of the substrate (202). Further, as for the infrared detection element (201), an entire light-receiving surface includes a planar shape. Then, it can be the small-sized infrared sensor (203) with improved quality.

Abstract: The present invention relates to a new method and apparatus for converting heat to electric energy. The invention exploits the rapid changes in spontaneous polarization that occur in ferroelectric materials during phase change. The invention permits robust and economical generation of electric energy from thermal energy, and it can be used in many different applications.

Abstract: A radiation detector with high detection sensitivity. The radiation detector according to the present invention includes an Al2O3 substrate, a Fe2O3 thin film layered on the Al2O3 substrate, a CaxCoO2 (where 0.15<x<0.55) thin film that is layered on the Fe2O3 thin film and that has CoO2 planes that are aligned inclined to the surface of the Al2O3 substrate, a first electrode disposed on the CaxCoO2 thin film, and a second electrode disposed on the CaxCoO2 thin film in a position opposed to the first electrode in the direction in which the CoO2 planes are aligned inclined.

Abstract: The present invention relates to a new method and apparatus for converting heat to electric energy. The invention exploits the rapid changes in spontaneous polarization that occur in ferroelectric materials during phase change. The invention permits robust and economical generation of electric energy from thermal energy, and it can be used in many different applications.

Abstract: A magnetic resonance tomograph is provided with a magnetic resonance system comprising at least two high-frequency transmitting/receiving units, each containing 1) a high-frequency transmitting/receiving coil, 2) a high-frequency current source that can be coupled to the high-frequency transmitting/receiving coil for transmitting, and 3) an amplifier that can be coupled to the high-frequency transmitting/receiving coil for receiving. A selector switch is provided, which keys a supply voltage to disconnect the amplifier during a transmission operation and the high-frequency current source during a receiving operation from the high-frequency transmitting/receiving coil. An inductor and a capacitor are provided between the high-frequency transmitting/receiving coil and the amplifier and form a series resonating circuit at the magnetic resonance frequency.

Abstract: New thermoelectric materials and devices are disclosed for application to high efficiency thermoelectric power generation. New functional materials based on oxides, rare-earth-oxides, rare-earth-nitrides, rare-earth phosphides, copper-rare-earth oxides, silicon-rare-earth-oxides, germanium-rare-earth-oxides and bismuth rare-earth-oxides are disclosed. Addition of nitrogen and phosphorus are disclosed to optimize the oxide material properties for thermoelectric conversion efficiency. New devices based on bulk and multilayer thermoelectric materials are described. New devices based on bulk and multilayer thermoelectric materials using combinations of at least one of thermoelectric and pyroelectric and ferroelectric materials are described. Thermoelectric devices based on vertical pillar and planar architectures are disclosed. The advantage of the planar thermoelectric effect allows utility for large area applications and is scalable for large scale power generation plants.

Abstract: A system and a method for determining a change of temperature of a SBT pixel element are provided. The method includes determining a first value indicating an amount of surface charge of the SBT pixel element due to a spontaneous polarization of the SBT pixel element at a first time. The method further includes determining a second value indicating an amount of surface charge of the SBT pixel element due to a spontaneous polarization of the SBT pixel element at a second time. The method further includes determining a third value proportional to a difference between the first value and the second value. The method further includes determining a fourth value indicative of the change of temperature of the SBT pixel element based on the third value. The method further includes storing the fourth value indicative of the change of temperature of the SBT pixel element in a memory device.

Abstract: An apparatus and method are provided for sensing infrared radiation. The apparatus includes a sensor element that is positioned in a magnetic field during operation to ensure a ? shaped relationship between specific heat and temperature adjacent the Curie temperature of the ferroelectric material comprising the sensor element. The apparatus is operated by inducing a magnetic field on the ferroelectric material to reduce surface charge on the element during its operation.

Abstract: A terahertz wave detecting apparatus includes a semiconductor chip 12 in which a 2-dimensional electron gas 13 is formed at a constant position from its surface, and a carbon nanotube 14, a conductive source electrode 15, a drain electrode 16 and a gate electrode 17 provided in close contact with the surface of the chip. The carbon nanotube 14 extends along the surface of the chip, where both ends of the tube are connected to the source electrode and the drain electrode of the chip, and the gate electrode 17 is spaced at a constant interval from the side surface of the carbon nanotube. Further, the apparatus includes a SD current detecting circuit 18 for applying a voltage between the source electrode and the drain electrode and for detecting SD current therebetween, a gate voltage applying circuit 19 for applying a variable gate voltage between the source electrode and the gate electrode, and a magnetic field generating device 20 for applying a variable magnetic field to the chip.

Abstract: New thermoelectric materials and devices are disclosed for application to high efficiency thermoelectric power generation. New functional materials based on oxides, rare-earth-oxides, rare-earth-nitrides, rare-earth phosphides, copper-rare-earth oxides, silicon-rare-earth-oxides, germanium-rare-earth-oxides and bismuth rare-earth-oxides are disclosed. Addition of nitrogen and phosphorus are disclosed to optimize the oxide material properties for thermoelectric conversion efficiency. New devices based on bulk and multilayer thermoelectric materials are described. New devices based on bulk and multilayer thermoelectric materials using combinations of at least one of thermoelectric and pyroelectric and ferroelectric materials are described. Thermoelectric devices based on vertical pillar and planar architectures are disclosed. The advantage of the planar thermoelectric effect allows utility for large area applications and is scalable for large scale power generation plants.

Abstract: An apparatus and method are provided for sensing infrared radiation. The apparatus includes a sensor element that is positioned in a magnetic field during operation to ensure a ? shaped relationship between specific heat and temperature adjacent the Curie temperature of the ferroelectric material comprising the sensor element. The apparatus is operated by inducing a magnetic field on the ferroelectric material to reduce surface charge on the element during its operation.

Abstract: Infrared sensors and methods for manufacturing the infrared sensors are provided. In one exemplary embodiment, the method includes A method for manufacturing an infrared sensor in accordance with another exemplary embodiment is proved. The method includes depositing a germanium layer on a silicon substrate. The method further includes depositing a first electrically conductive layer on both the germanium layer and a portion of the silicon substrate. The method further includes depositing a ferroelectric layer on the first electrically conductive layer opposite the germanium layer. The method further includes depositing a second electrically conductive layer on both the ferroelectric layer and a portion of the silicon substrate. The method further includes removing the germanium layer by applying a liquid on the germanium layer that dissolves the germanium layer such that a cavity is formed between the first electrically conductive layer and the silicon substrate.

Abstract: A gas sensor apparatus for detecting the presence of selected or target gases which has a Quantum Ferroelectric Copolymer sensing element, which is bombarded with infrared radiation and in the presence of a target gas provides an electrical output dependent upon the infrared absorption band of the target gas.

Abstract: An infrared detector includes a silicon substrate, an infrared reflecting film, a diaphragm including a bolometer thin film, disposed above the silicon substrate across a gap, and a signal line that electrically connects the bolometer thin film and the infrared reflecting film, such that the bolometer thin film and the infrared reflecting film constantly become equipotential with each other. In place of the signal line, a conductor independently provided from interconnects in the silicon substrate may be employed.

Abstract: Microbolometers with regionally thinned microbridges are produced by depositing a thin film (0.6 ?m) of silicon nitride on a silicon substrate, forming microbridges on the substrate, etching the thin film to define windows in a pixel area, thinning the windows, releasing the silicon nitride, depositing a conductive YBaCuO film on the bridges, depositing a conductive film (Au) on the YBaCuO film, and removing selected areas of the YBaCuO and conductive films.

Abstract: A gas sensor apparatus for detecting the presence of selected or target gases which has a Quantum Ferroelectric Copolymer sensing element, which is bombarded with infrared radiation and in the presence of a target gas provides an electrical output dependent upon the infrared absorption band of the target gas.

Abstract: A radiation detector is described which includes first circuitry having at least one operational parameter associated therewith which is operable to change in response to radiation exposure. Second circuitry is operable to detect a change in the at least one operational parameter based on a predetermined relation between the at least one operational parameter and at least one type of radiation. The second circuitry is also operable to encode detection information representative of the radiation exposure in response thereto.

Abstract: A measurement technique for normalizing the sensitive-axis output of a magnetoresistive (MR) sensor which greatly reduces both temperature effects and magnetic contributions from the insensitive-axis cross-terms. Specifically, the normalization techniques disclosed may be effectuated by direct measurement with no prior knowledge of the sensor constants being required and may be performed for a single sensor with multiple sensors not being required in order to estimate the cross-axis fields for each of the other sensors. The technique can additionally provide an output proportional to the insensitive-axis field as well as that of the sensitive-axis and, when combined with knowledge of ambient field strengths, can be used to determine fundamental MR sensor constants which then allows for correction of higher-order sensor non-linearities. The techniques disclosed are particularly conducive to low power supply availability applications such as battery operation.

Abstract: A measurement technique for normalizing the sensitive-axis output of a magnetoresistive (MR) sensor which greatly reduces both temperature effects and magnetic contributions from the insensitive-axis cross-terms. Specifically, the normalization techniques disclosed may be effectuated by direct measurement with no prior knowledge of the sensor constants being required and may be performed for a single sensor with multiple sensors not being required in order to estimate the cross-axis fields for each of the other sensors. The technique can additionally provide an output proportional to the insensitive-axis field as well as that of the sensitive-axis and, when combined with knowledge of ambient field strengths, can be used to determine fundamental MR sensor constants which then allows for correction of higher-order sensor non-linearities. The techniques disclosed are particularly conducive to low power supply availability applications such as battery operation.