Abstract: According to one embodiment, a radiation detector includes a first layer, a first conductive layer, a second conductive layer, and an organic semiconductor layer. The first layer includes a first organic substance. The first layer emits light based on beta rays incident on the first layer. A period from a time of a maximum value of an intensity of the light until the intensity of the light drops to 1/2.72 of the maximum value is not less than 10 ns. The second conductive layer is located between the first layer and the first conductive layer. The organic semiconductor layer is located between the first conductive layer and the second conductive layer.

Abstract: The present disclosure provides a thin film transistor, a GOA circuit and an array substrate, the thin film transistor including a source electrode, including a source electrode wiring and a plurality of source electrode branches; a drain electrode, including a drain electrode wiring and a plurality of drain electrode branches; a gate; a semiconductor layer including a plurality of semiconductor branches; a plurality of source electrode branches. The plurality of drain electrode branches are in contact with the plurality of semiconductor branches and are divided into a plurality of cells; the source electrode wiring and the drain electrode wiring are arranged in a parallel and spaced apart, and the number m of one of the source electrode wiring and the drain electrode wiring is an integer greater than or equal to 2, and the number n of the other is an integer greater than or equal to 1.

Abstract: A support unit may include a plurality of heaters disposed in a matrix form in the support unit to heat a substrate, and a power supply unit for supplying power to the plurality of heaters, wherein a current applied to the plurality of heaters is controlled by switches connected to rows and columns of the matrix, respectively, and the switches connected to the rows of the matrix include first switches capable of controlling the current applied to the rows of the matrix and second switches connected in parallel with the first switches.

Abstract: A method for manufacturing a scintillation detector structure including the steps of forming a plurality of first structures into a surface of a substrate to form a patterned substrate, filling the plurality of first structures and covering the surface of the substrate with a polymeric material, hardening the polymeric material and first removing the hardened polymeric material from the substrate to obtain a polymeric mold with a patterned surface having a plurality of second structures, performing a surface cleaning treatment and a silanization of the patterned surface of the polymeric mold, filling the plurality of second structures and covering the patterned surface of the polymeric mold with a moldable scintillation material, polymerizing the scintillation material while exerting a pressure on the scintillation material, and second removing the polymerized scintillation material from the plurality of second structures of the polymeric mold to obtain scintillation detector active structures.

Abstract: A direct-conversion X-ray detector according to an embodiment includes a plurality of anode electrodes, at least one cathode electrode, and electric-field forming circuitry. The anode electrodes are aligned in a cone angle direction of an incident X-ray. The cathode electrode is positioned on an incident side of an X-ray relative to the anode electrodes, and that opposes the anode electrodes. The electric-field forming circuitry configured to form an electric field in a direction based on a cone angle of the X-ray, between the anode electrodes and the cathode electrode.

Abstract: An optical component includes: a first layer made of a first material having a first refractive index, the first layer including a first principal surface and a second principal surface opposite to the first principal surface; and a second layer made of a second material having a second refractive index different from the first refractive index, the second layer including a third principal surface and a fourth principal surface opposite to the third principal surface, and the first layer and the second layer are stacked such that the second principal surface and the third principal surface are in contact. A lens is formed on the first principal surface of the first layer, and a vortex profile is formed on the third principal surface of the second layer.

Abstract: The invention is related to a method for automatic selection and pre-processing of digital images that comprise the necessary amount of Transfer function modulated quantum-noise to apply a mathematical sharpness calculation method for calculation of a sharpness parameter of the digital imaging system. Suitable images for the method are selected from the pool of available images acquired by the digital imaging system during daily operation.

Abstract: According to one embodiment, a radiation detector includes a first conductive layer including a first conductive region, and a first stacked body. The first stacked body includes a first electrode separated from the first conductive region in the a direction, a first scintillator layer provided between the first conductive region and the first electrode, a first intermediate electrode provided between the first scintillator layer and the first electrode, and a first organic semiconductor layer provided between the first intermediate electrode and the first electrode.

Abstract: In a system and method of operating a system that includes a controller and a first bus participant and a successor, the bus participant and successor each has a circuit arrangement arranged between an output and an input, a first resistor is arranged between the output and the supply voltage terminal, a second resistor is arranged between the input and a ground terminal, a third resistor can be arranged between the input and the supply voltage terminal by a first controllable semiconductor switch, and a fourth resistor can be arranged between the output and the supply voltage terminal by a second controllable semiconductor switch.

Abstract: The present disclosure relates to a method for detecting incoming radiation having a plurality of differing properties including at least one of differing types, differing energies or differing incoming directions. The method involves using a scintillator structure formed from first and second dissimilar scintillator materials, where the first and second dissimilar scintillator materials emit first and second different colors of light in response to the incoming radiation. A first light detector is used for detecting light having the first color, and a second light detector is used for detecting light having the second color. A first output signal is generated in response to the detection of light having the first color, and a second output signal is generated in response to detecting light having the second color. The first and second output signals are then analyzed to determine at least one property of the incoming radiation.

Abstract: Disclosed are a flat panel detector and a manufacturing method thereof. The flat panel detector including: a first optical assembly, having a first side and a second side opposite to the first side in a thickness direction of the flat panel detector, and including: a first scintillator layer configured for converting at least part of rays into a first visible light; and a first light guide component stacked with the first scintillator layer and configured for guiding the first visible light; a first image sensor assembly stacked with the first optical assembly, configured for receiving the first visible light, and including: a first image sensor located at the first side of the first optical assembly; and a second image sensor located at the second side of the first optical assembly.

Abstract: A radiographing system includes a radiation generation apparatus emitting a radiation, a radiation detection apparatus detecting the radiation to generate a radiographic image, and a radiographing apparatus controlling operation of the radiation detection apparatus by communicating with the radiation detection apparatus. The radiographing system further includes an acquisition unit configured to acquire information about the radiation detection apparatus, and a determination unit configured to determine whether the radiation detection apparatus includes an automatic exposure control (AEC) function, based on the information about the radiation detection apparatus acquired by the acquisition unit.

Abstract: A semiconductor substrate has a first main surface and a second main surface that oppose each other and a plurality of cells that are arrayed two-dimensionally in a matrix. Each cell includes at least one avalanche photodiode arranged to operate in a Geiger mode. A trench penetrating through the semiconductor substrate is formed in the semiconductor substrate to surround each cell when viewed in a direction orthogonal to the first main surface. A light-shielding member optically separates mutually adjacent cells of the plurality of cells. The light-shielding member includes a first portion extending in a thickness direction of the semiconductor substrate between an opening end of the trench at the first main surface and an opening end of the trench at the second main surface and a second portion projecting out from the second main surface. The insulating film includes a portion that covers the second portion.

Abstract: A system identifying a source of radiation is provided. The system includes a radiation source detector and a radiation source identifier. The radiation source detector receives measurements of radiation; for one or more sources, generates a detection metric indicating whether that source is present in the measurements; and evaluates the detection metrics to detect whether a source is present in the measurements. When the presence of a source in the measurements is detected, the radiation source identifier for one or more sources, generates an identification metric indicating whether that source is present in the measurements; generates a null-hypothesis metric indicating whether no source is present in the measurements; evaluates the one or more identification metrics and the null-hypothesis metric to identify the source, if any, that is present in the measurements.

Abstract: Disclosed apparatus comprises: a radiation detection panel in a housing, for detecting incident radiation as an electrical signal related to a radiation image; a support base in the housing and located on a side opposite to a radiation incident surface, for supporting the radiation detection panel from a back surface side; an internal structure in the housing and disposed on the back side surface of the support base; and fixing members in the housing, for fixing the internal structure to the support base, the difference in the radiation shielding efficiency between at least one of the fixing members and the support base is less than 50%, and when viewed from a radiation incident direction, a sheet like member having a radiation shielding efficiency of 50% or more is not arranged on a region on the back surface side of the radiation detection panel overlapping with the fixing member.

Abstract: A panel radiation detector is provided for detecting radiation event(s) of ionizing radiation, comprising a plurality of adjoining plastic scintillator slabs, a plurality of silicon photomultiplier sensors arranged at an edge of at least one of the plastic scintillator slabs) and configured to detect scintillation light generated in the scintillator slabs responsive to the radiation events, and a plurality of signal processing units each connected to one of the silicon photomultiplier sensors, wherein the signal processing units each comprise a digitization circuit configured to generate a digitized signal for signal analysis by executing 1-bit digitization of a detection signal generated by at least one of the silicon photomultiplier sensors responsive to the detected scintillation light for determining the energy of the detected radiation event(s).

Abstract: The invention relates to a method and apparatus for determining actual points along a positively charged particle beam path and/or vectors of the charged particle beam path, where the determined points and vectors aid tomographic construction of a three-dimensional image of a tumor and surrounding tissue. Further, the determined points and vectors of the positively charged particle beam are used in beam control safety, to modify a tumor treatment plan in real time, and/or in combination with co-gathered X-ray images to form a hybrid proton tomography—X-ray three-dimensional image. Preferably, common elements, such as an injector, accelerator, beam transport system, and/or patient positioning system are used for both tumor treatment and tumor imaging.

Abstract: Disclosed herein is an image sensor with two radiation detectors, each having a planar surface for receiving radiation; and a calibration pattern. The planar surfaces of the radiation detectors are not coplanar. The image sensor can capture images of two portions of the calibration pattern, respectively using the radiation detectors. The image sensor can determine two transformations for the radiation detectors based on the images of the portions of the calibration pattern, respectively. The image sensor can capture images of two portions of a scene, respectively using the radiation detectors, determine projections of the images of the portions of the scene onto an image plane using the transformations, respectively, and form an image of the scene by stitching the projections.

Abstract: A circuit for sensing an X-ray including a switching element, a storage element, a sensing element and a branching element. The storage element electrically coupled to the switching element. The sensing element electrically coupled to the switching element. The branching element electrically coupled between the storage element and the sensing element.

Abstract: A radiation imaging apparatus includes a sensor substrate having a plurality of imaging pixels used to capture a radiation image and a detection pixel used to detect radiation; and a housing which accommodates the sensor substrate, wherein the sensor substrate includes an arrangement prohibited region including a stress concentration portion where a stress concentrates due to deformation of the housing, and the detection pixel is arranged in a region different from the arrangement prohibited region.

Abstract: Structures operable to detect radiation are described. An imaging system is also described having the structures. For example, a structure may include two screens and a photosensor array between the two screens. One of the screens is comprised of a scintillating glass substrate. The scintillating glass substrate may serve two purposes. The scintillating glass substrate converts incident x-rays into light photons. Additionally, the scintillating glass substrate is a substrate for the photosensor array. The photosensor array is configured to detect light photons that reach the photosensor array from both screens.

Abstract: The invention relates to energy-resolved X-ray imaging apparatus and method. The present disclosure provides an apparatus for electromagnetic irradiation imaging. The apparatus includes one or more pixels, each pixel including a plurality of detector cells arranged in a row extending in a row direction. The row is configured to receive photons at an incident surface at one end of the row, and the received photons penetrate the plurality of detector cells in the row direction. The plurality of detector cells of the same row are configured to generate respective signals that collectively indicate an energy-resolved spectral profile of the photons based on the penetration of the photons into the row of detector cells.

Abstract: Described here are systems, devices, and methods for imaging and radiotherapy procedures. Generally, a radiotherapy system may include a radiotransparent patient platform, a radiation source coupled to a multi-leaf collimator, and a detector facing the collimator. The radiation source may be configured to emit a first beam through the collimator to provide treatment to a patient on the patient platform. A controller may be configured to control the radiotherapy system.

Abstract: A difference in wiring capacitance between bias lines is reduced by equalizing, for pixels A connected to a signal line from a first direction and pixels B connected to the signal line from a second direction, the numbers of the pixels A and the pixels B where the pixels A and the pixels B are each connected to the corresponding bias line.

Abstract: A PET detector and method thereof are provided. The PET detector may include: a crystal array including a plurality of crystal elements arranged in an array and light-splitting structures set on surfaces of the plurality of crystal elements, the light-splitting structures jointly define a light output surface of the crystal array; a semiconductor sensor array, which is set in opposite to the light output surface of the crystal array and is suitable to receive photons from the light output surface, the semiconductor sensor array comprises a plurality of semiconductor sensors arranged in an array.

Abstract: Method for fabricating a photodetector includes providing a first substrate containing pixel circuits and common electrode connection members formed therein. A first wiring board material layer is formed on the first substrate and electrically connected to the pixel circuits. A second wiring board material layer is formed on a second substrate and electrically connected to the pixel layers formed therein. The first and second wiring board material layers are bonded. The second substrate, and the second and first wiring board material layers are etched to form through holes with isolation wall members formed therein, the through holes dividing the pixel layer, and the second and first wiring board material layers into pixel units, and second and first wiring boards. Each isolation wall member includes a conductive member and a sidewall between the conductive member and the pixel unit. A transparent electrode layer is formed on the second substrate.

Abstract: A radiation detector includes a photoelectric conversion element array, a scintillator layer converting radiation into light, a resin frame formed on the photoelectric conversion element array, and a protective film covering the scintillator layer. The resin frame has a groove continuous with an outer edge of the protective film. The groove has an overlapping region including a first groove end portion and a second groove end portion partially overlapping in a direction intersecting with an extension direction of the groove.

Abstract: Described herein are scintillation detectors such as alpha- and beta-particle scintillation detectors along with methods of preparing and using such detectors. The scintillation detector comprises a protective layer including light-blocking nanoparticles.

Abstract: The present disclosure relates to a thin film transistor array substrate for a digital X-ray detector device and the digital X-ray detector device and a manufacturing method thereof. The thin film transistor array substrate comprises: a base substrate comprising a driving area and a non-driving area; at least one PIN diode disposed within the driving area of the base substrate and comprising a lower electrode, a PIN layer, and an upper electrode; and at least one align mark disposed within the non-driving area of the base substrate, wherein the align mark comprises a first align mark layer, an align PIN layer, and a second align mark layer.

Abstract: An X-ray imaging apparatus includes an X-ray source, an X-ray imaging panel, and a controller. The controller includes an image processing unit that generates an inspection image in accordance with a data signal read from a thin-film transistor with the thin-film transistor supplied with a gate signal, a detection control unit that detects a dark-spot pixel from the inspection image, and a threshold correction unit that applies, to a gate of the thin-film transistor corresponding to the dark-spot pixel, a positive shift voltage that raises a gate-off threshold voltage of the thin-film transistor.

Abstract: A radiation-sensing device is provided. The radiation-sensing device includes a substrate, a first scintillator layer, a second scintillator layer, and an array layer. The first scintillator is disposed on a first side of the substrate, and includes a plurality of first blocking walls and a plurality of first scintillator elements. The plurality of first scintillator elements are located between the plurality of first blocking walls. The second scintillator layer is disposed on a second side of the substrate, and the second side is opposite to the first side. The array layer is located between the first scintillator layer and the second scintillator layer, and has a plurality of photosensitive elements. In addition, a projection of at least one of the plurality of first blocking walls on the substrate overlaps with a projection of at least one of the plurality of photosensitive elements on the substrate.

Abstract: An X ray device, including an array substrate, a scintillator layer, a first adhesion layer, a function film, and a second adhesion layer, is provided. The scintillator layer is disposed on the array substrate. The first adhesion layer is disposed between the scintillator layer and the array substrate. The function film is disposed on the array substrate. The second adhesion layer is disposed between the function film and the array substrate. The function film covers the scintillator layer.

Abstract: An X-ray device, including a sensor panel and a flexible scintillator structure disposed on the sensor panel, is provided. A manufacturing method of the X-ray device is also provided.

Abstract: The present disclosure provides an image sensor and electronic equipment. The image sensor includes: a pixel array, comprising a plurality of pixels, wherein a light-transmitting part is disposed between adjacent pixels; a protective layer, covering at least a part of a surface of the pixel; a conversion layer, configured to convert X-ray into visible light; wherein when X-ray is incident from a side of the image sensor, a portion of the X-ray is incident on the protective layer, another portion of X-ray transmits through the light-transmitting part between the pixels, reaches the conversion layer, and is converted into visible light by the conversion layer and received by the pixel. With the above solution, the pixels can be protected from the damage of X-ray high-energy photons while improving the resolution of the captured X-ray image.

Abstract: According to one embodiment, a radiation detector includes a first member including a scintillator layer, an organic member including an organic semiconductor layer, and a first conductive layer. The first conductive layer includes a first conductive region and a second conductive region. A second direction from the first conductive region toward the second conductive region crosses a first direction from the organic member toward the first member. A first portion of the organic member is between the first conductive region and the second conductive region in the second direction.

Abstract: An apparatus, system and method suitable for detecting X-ray are disclosed. In one example, the apparatus comprises: an X-ray absorption layer and a mask; wherein the mask comprises a first window and a second window, and a portion between the first window and the second window; wherein the first and second windows are not opaque to an incident X-ray; wherein the portion is opaque to the incident X-ray; and wherein the first and second windows are arranged such that charge carriers generated in the X-ray absorption layer by an X-ray photon propagating through the first window and charge carriers generated in the X-ray absorption layer by an X-ray photon propagating through the second window do not spatially overlap.

Abstract: Provided is a radiation detector having a portion in which a substrate in which a plurality of pixels for accumulating electric charges generated in accordance with light converted from radiation are formed in a pixel region, a conversion layer that converts radiation into light, a reflective pressure sensitive adhesive layer that reflects the light converted by the conversion layer, and an adhesive layer that covering a region including a region ranging from an end part of the pressure sensitive adhesive layer to a surface of the substrate are provided in this order.

Abstract: An X-ray sensing device includes a photosensitive element, lead-containing glass, and an X-ray conversion structure. The photosensitive element is configured to sense light having a first wavelength. The lead-containing glass overlaps the photosensitive element. The X-ray conversion structure is disposed on the lead-containing glass. The lead-containing glass is located between the photosensitive element and the X-ray conversion structure. The X-ray conversion structure is configured to at least partially convert X-rays into light having the first wavelength.

Abstract: A radiation detector including: a sensor substrate including a flexible base member and a layer provided on a first surface of the base member and formed with plural pixels that accumulates electrical charge generated in response to light converted from radiation; a conversion layer provided on the first surface side of the sensor substrate, the conversion layer converts radiation into the light; and an elastic layer provided on the opposite side of the conversion layer to a side provided with the sensor substrate, the elastic layer having a greater restoring force with respect to bending than the sensor substrate.

Abstract: Provided is a multiplexing signal processing device based on a passive element including a plurality of signal converters that respectively process a plurality of input signals and are arranged in a matrix consisting of N rows and M columns and include N signal converter blocks respectively connected to N row unit output terminals; and M signal converter blocks respectively connected to M column unit output terminals. The signal converters each include a first diode having an input terminal connected to an input signal node, a second diode having an input terminal connected to the input signal node, and a ground resistor coupled to the input signal node.

Abstract: The present disclosure provides a detection substrate, a manufacturing method thereof and a ray detector. The detection substrate includes: a base substrate; a plurality of independent first electrodes arranged on the base substrate on the same layer; a photoelectric conversion layer arranged on a whole face of sides, facing away from the base substrate, of the plurality of first electrodes; a ray absorption layer arranged on a side, facing away from the plurality of first electrodes, of the photoelectric conversion layer, wherein an orthographic projection of the ray absorption layer on the base substrate is overlapped with an orthographic projection of gaps between the first electrodes on the base substrate; and a second electrode arranged on a whole face of a side, facing away from the plurality of first electrodes, of the photoelectric conversion layer.

Abstract: A radiation detector includes a flexible substrate, plural pixels provided on the substrate and each including a photoelectric conversion element, a scintillator stacked on the substrate, and a bending suppression member configured to suppress bending of the substrate. The bending suppression member has a rigidity that satisfies R?X2/2ZL wherein X is a pixel size, ZL is a critical deformation amount of the pixel through bending of the substrate, and R is a radius of curvature of bending occurring in the substrate due to the weight of the scintillator.

Abstract: The present disclosure provides a flat panel detector and a driving method thereof. A detection unit includes: a first transistor, a second transistor, a storage capacitor and a photoelectric detection device, and because an active layer of the second transistor is made of amorphous silicon semiconductor materials and an active layer of the first transistor is made of low-temperature poly-silicon semiconductor materials or metallic oxide semiconductor materials, transmission delay of an electric signal generated by the photoelectric detection device may be reduced by controlling conduction and cut-off of the first transistor and controlling conduction and cut-off of the second transistor.

Abstract: A radiation detector includes a wiring board, a first image sensor, a second image sensor, a first fiber optic plate, a second fiber optic plate, and a scintillator layer. The first fiber optic plate can guide light between a first light entering region and a first light exiting region. The second fiber optic plate can guide light between a second light entering region and a second light exiting region. One side of the first light entering region and one side of the second light entering region are in contact with each other. The first light exiting region is positioned on a first light receiving region. The second light exiting region is positioned on a second light receiving region. One side surface of a first side surface and one side surface of a second side surface exhibit shapes along each other and in contact with each other.

Abstract: A positive electrode material contains a positive electrode active material and a first solid electrolyte material. The first solid electrolyte material contains Li, M, and X; M at least contains yttrium; and X is at least one selected from the group consisting of Cl, Br, and I.

Abstract: A system identifying a source of radiation is provided. The system includes a radiation source detector and a radiation source identifier. The radiation source detector receives measurements of radiation; for one or more sources, generates a detection metric indicating whether that source is present in the measurements; and evaluates the detection metrics to detect whether a source is present in the measurements. When the presence of a source in the measurements is detected, the radiation source identifier for one or more sources, generates an identification metric indicating whether that source is present in the measurements; generates a null-hypothesis metric indicating whether no source is present in the measurements; evaluates the one or more identification metrics and the null-hypothesis metric to identify the source, if any, that is present in the measurements.

Abstract: The present invention provides a rare-earth halide scintillating material and application thereof. The rare-earth halide scintillating material has a chemical formula of REaCebX3, wherein RE is a rare-earth element La, Gd, Lu or Y, X is one or two of halogens Cl, Br and I, 0?a?1.1, 0.01?b?1.1, and 1.0001?a+b?1.2. By taking a +2 valent rare-earth halide having the same composition as a dopant to replace a heterogeneous alkaline earth metal halide in the prior art for doping, the rare-earth halide scintillating material is relatively short of a halogen ion. The apparent valence state of a rare-earth ion is between +2 and +3. The rare-earth halide scintillating material belongs to non-stoichiometric compounds, but still retains a crystal structure of an original stoichiometric compound, and has more excellent energy resolution and energy response linearity than the stoichiometric compound.

Abstract: The present invention relates to a radiation detector (100) comprising: i) a substrate (110); ii) a sensor, which is coupled to the substrate, the sensor comprising a first array (120) of sensor pixels, a second array (130) of signal read-out elements, and an electronic circuitry which is configured to provide image data based on signals received from the signal read-out elements; iii) a transducer, which is coupled to the substrate and to the sensor, the transducer comprising a third array (140) of subpixels, wherein at least two subpixels are assigned to one sensor pixel; wherein the second array of signal read-out elements and the third array of subpixels correspond to each other; wherein each of the subpixels comprises a radiation conversion material.

Abstract: Provided is are a particle detection device and method of fabrication thereof. The particle detection device includes a scintillator array that includes a plurality of scintillator crystals; a plurality of detectors provided on a bottom end of the scintillator array; and a plurality of prismatoids provided on a top end of the scintillator array. Prismatoids of the plurality of prismatoids are configured to redirect particles between top ends of crystals of the scintillator array. Bottom ends of a first group of crystals of the scintillator array are configured to direct particles to a first detector of the plurality of detectors and bottom ends of a second group of crystals of the scintillator array are configured to direct particles to a second detector substantially adjacent to the first detector.

Abstract: A method is provided for determining the dose rate {dot over (H)} of nuclear radiation field, namely a gamma radiation field, with a radiation detection system (RDS), comprising a scintillator, a photodetector, an amplifier and a pulse measurement electronics. The pulse measurement electronics includes a sampling analog to digital converter, where the nuclear radiation deposes at least some of its energy in the scintillator, thereby producing excited states in the scintillation material, with the excited states decaying thereafter under emission of photons with a decay time ?. Photons are absorbed by the photodetector under emission of electrons, those electrons forming a current pulse, said current pulse being amplified so that the resulting current signal can be processed further in order to determine the charge of the pulse measured.