Abstract: A composition for electrode formation containing metal nanoparticles dispersed in a dispersion medium, wherein the composition also comprises one or more organic polymers selected from the group consisting of polyvinylpyrrolidones, polyvinylpyrrolidone copolymers, polyvinyl alcohols, and cellulose ethers.

Abstract: Photovoltaic cells comprising an active layer comprising, as p-type material, conjugated polymers such as polythiophene and regioregular polythiophene, and as n-type material at least one fullerene derivative. The fullerene derivative can be C60, C70, or C84. The fullerene also can be functionalized with indene groups. Improved efficiency can be achieved.

Abstract: An embodiment of the present invention relates to a composition containing a polymer or oligomer (A) having a repeating unit with hole transport properties and also having a thienyl group which may have a substituent, and an initiator (B), wherein the solubility of the composition is capable of being changed by applying heat, light, or both heat and light.

Abstract: The invention relates to novel polymers containing one or more 4,8-dioxycarbonylalkyl-benzo[1,2-b:4,5-b?]dithiophene repeating units or their thioester derivatives, methods for their preparation and monomers used therein, blends, mixtures and formulations containing them, the use of the polymers, blends, mixtures and formulations as semiconductor in organic electronic (OE) devices, especially in organic photovoltaic (OPV) devices, and to OE and OPV devices comprising these polymers, blends, mixtures or formulations.

Abstract: A conductive reflective film which is formed by calcining a substrate on which a composition containing metal nanoparticles is coated, the conductive reflective film including pores which appear on the film contact surface in the substrate side having an average diameter of 100 nm or less, an average depth of 100 nm or less in terms of position of the pores, and a number density of the pores of 30 pores/?m2 or less.

Abstract: Graphene-based thermopiles are provided. The graphene-based thermopiles may include thermocouples having one or more graphene strips that may be polarized to adjust their Seebeck coefficients. The polarized graphene strips may have larger Seebeck coefficients than the materials conventionally used in thermopile devices. As a result, the graphene-based thermopiles may generate large output voltages using fewer thermocouples than conventional thermopile devices.

Abstract: Ceramic compositions having a dispersion of nano-particles therein and methods of fabricating ceramic compositions having a dispersion of nano-particles therein are described. In an example, a method of forming a composition having a dispersion of nano-particles therein includes forming a mixture of semiconductor nano-particles and ceramic precursor molecules. A ceramic matrix is formed from the ceramic precursor molecules. The ceramic matrix includes a dispersion of the semiconductor nano-particles therein. In another example, a composition includes a medium including ceramic precursor molecules. The medium is a liquid or gel at 25 degrees Celsius. A plurality of semiconductor nano-particles is suspended in the medium.

Abstract: The present invention provides a phthalocyanine nanorod; an ink composition containing the phthalocyanine nanorod; a transistor containing the phthalocyanine nanorod; a material for a photoelectric conversion device, the material containing the phthalocyanine nanorod; and a photoelectric conversion device containing the phthalocyanine nanorod between the positive electrode and the negative electrode. Since an ink composition containing a nanorod according to the present invention can be formed into a film by a wet process such as a coating method or a printing method, an electronic device that is less likely to fail and is lightweight and inexpensive can be produced on a flexible plastic substrate.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4Sb12-zTez, where 0<x?0.5 and 0.8<z?2.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4-aSb12-zQz, where Q is at least one selected from the group consisting of O, S, Se and Te, 0<x?0.5, 0<a?1 and 0?z?4.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-zXnQ?z, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; Q? is at least one selected from the group consisting of O, S and Se; 0<x<1; 0<y<1; 0?m?1; 0?n<9; 0<z?2 and 0<a?1.

Abstract: The present invention relates to screen-printable quaternary chalcogenide compositions. The present invention also provides a process for creating an essentially pure crystalline layer of the quaternary chalcogenide on a substrate. Such coated substrates contain p-type semiconductors and are useful as the absorber layer in a solar cell.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-z-bXnQ?z, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; Q? is at least one selected from the group consisting of O, S and Se; 0<x<1; 0<y<1; 0?m?1; 0?n<9; 0<z?2; 0?a?1, 0<b?3 and 0<n+z+b<12.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4-aSb12-z-bQz, where Q is at least one selected from the group consisting of O, S, Se and Te; 0<x?0.5; 0?a?1; 0<b?3; and 0<z?4.

Abstract: Photovoltaic cells comprising an active layer comprising, as p-type material, conjugated polymers such as polythiophene and regioregular polythiophene, and as n-type material at least one fullerene derivative. The fullerene derivative can be C60, C70, or C84. The fullerene also can be functionalized with indene groups. Improved efficiency can be achieved.

Abstract: This invention discloses a solid-based synthesis of cesium tin tri-iodide (CsSnI3). More specifically, the CsSnI3 is fabricated in a 3 zone high temperature resisting tube by the solid-phase sintering method. CsSnI3 are ideally suited for a wide range of applications such as light emitting and photovoltaic devices.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-z-bXnQz, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt, X is at least one selected from the group consisting of Si, Ga, Ge and Sn, Q is at least one selected from the group consisting of O, S, Se and Te, 0<x<1, 0?y<1, 0?m?1, 0?a?1, 0?n<9, 0?z?4, 0?b?3 and 0<n+z+b.

Abstract: The present disclosure generally relates to organic photosensitive optoelectronic devices comprising at least one boron dipyrrin compound. In addition, the present disclosure relates to methods of making organic photosensitive optoelectronic devices comprising at least one boron dipyrrin compound. The present disclosure also generally relates to chromophoric compounds that combine strong absorption of light at visible wavelengths with the ability to undergo symmetry-breaking intramolecular charge transfer (ICT), and their use for the generation of free carriers in organic photovoltaic cells (OPVs) and electric-field-stabilized geminate polaron pairs. The present disclosure also relates to the synthesis of such compounds, methods of manufacture, and applications in photovoltaic systems and organic lasers.

Abstract: Photoelectric systems combining a semiconductor and a phosphorescent compound with an emission spectrum of photons with energy levels equal to or greater than the activation energy of the semiconductor, wherein the phosphorescent compound is characterized by the emission spec-tram being produced by excitation of the phosphorescent compound with lower energy photons and the separation distance between the semiconductor and the phosphorescent compound is less than the distance at or above which scattering losses predominate. Methods are that embody technological applications of the photoelectric systems are also disclosed, as well as articles that embody technological applications of the photoelectric systems.

Abstract: This invention relates to a process for the phase-controlled synthesis of ternary and quaternary mixed-metal sulfide nanoparticles by reacting soft metal ions with hard metal ions in a high-boiling organic solvent in the presence of a complexing and activating ligands to control the reactivity of the metal ions. Ternary and quaternary mixed metal sulfides nanoparticles of copper, sulfur, and iron, aluminum, tin, and silicon are preferred. This invention also relates to the phase controlled preparation of polymorphs of bornite nanoparticles and the phase controlled preparation of stabilized ?- and ?-chalconite nanoparticles.

Abstract: A dye-sensitized photoelectric conversion element, comprises a pair of electrodes arranged opposite to each other; a semiconductor layer including a semiconductor supporting a sensitizing dye; and an electrolyte layer. At least the semiconductor layer and the electrolyte layer are provided between the pair of electrodes, and the sensitizing dye contains a compound represented by the following Formula (1).

Abstract: Oxotitanium phthalocyanine nanoparticles in the crystal form of phase-Y (Y-TiOPc) having particle diameters of 2˜4 nm, preparation, and applications thereof are disclosed. The preparation method comprises the following steps: mixing a concentrated sulfuric acid solution of TiOPc with water or dilute sulfuric acid, or water or dilute sulfuric acid with a surfactant dissolved therein, or an aqueous solution of a low molecular weight organic compound to form a suspension or hydrosol; adding into the resulting suspension or hydrosol chlorinated hydrocarbons to extract TiOPc into an organic phase, so as to form a colloidal solution of Y-TiOPc nanoparticles; and then, washing and drying the above nanoparticles to give rise to a powder of the Y-TiOPc nanoparticles. Such a nanoparticle powder can disperse in chlorinated hydrocarbons to form stable colloidal solutions, thereby providing an alternative approach for solving the problem of poor dispersibility for Y-type TiOPc.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-zXnTez, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; 0<x<1; 0<y<1; 0?m?1; 0?n<9; 0<z?2 and 0<a?1.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-z-bXnTez, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; 0<x<1; 0<y<1; 0?m?1; 0?n<9; 0<z?2; 0?a?1; 0<b?3; and 0<n+z+b<12.

Abstract: A colloidal dispersion of a metal chalcogenide material in divided state in an aqueous liquid phase selected from the group consisting of aqueous solutions and solutions including a mixture of water and at least one solvent that is miscible with water, wherein the carbon element of the material is present in a proportion of less than 2.5 wt. % as determined by elemental analysis, the concentration of the material in the colloidal dispersion is more than 40 g/l, and the colloidal dispersion has a charge potential value which is negative and the absolute value of which is higher than 20 mV.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4Sb12-n-zQ?nTez, where Q? is at least one selected from the group consisting of O, S and Se, 0<x?0.5, 0<n?2 and 0<z?2.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-mAmSb12-n-zXnTez, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Pd, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt, X is at least one selected from the group consisting of Si, Ga, Ge and Sn, 0<x<1, 0<y<1, 0?m?1, 0?n<9 and 0<z?2.

Abstract: The invention relates to novel polymers containing one or more pyrrolo[3,2-b]pyrrole-2,5-dione repeating units, methods for their preparation and monomers used therein, blends, mixtures and formulations containing them, the use of the polymers, blends, mixtures and formulations as semiconductor in organic electronic (OE) devices, especially in organic photovoltaic (OPV) devices, and to OE and OPV devices comprising these polymers, blends, mixtures or formulations.

Abstract: A phosphor includes semiconductor nanoparticles formed of compound semiconductor, and conductive transparent compounds. The semiconductor nanoparticles may be dispersed in or on the conductive transparent compounds. The resistivity of the conductive transparent compounds is preferably less than or equal to 10 ?cm.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-mAmSb12-n-z-pXnQ?pTez, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; Q? is at least one selected from the group consisting of O, S and Se; 0<x<1; 0<y<1; 0?m?1; 0?n?7; 0<z?2 and 0<p?2.

Abstract: This invention relates generally to the field of quasicrystalline structures. In preferred embodiments, the stopgap structure is more spherically symmetric than periodic structures facilitating the formation of stopgaps in nearly all directions because of higher rotational symmetries. More particularly, the invention relates to the use of quasicrystalline structures for optical, mechanical, electrical and magnetic purposes. In some embodiments, the invention relates to manipulating, controlling, modulating and directing waves including electromagnetic, sound, spin, and surface waves, for pre-selected range of wavelengths propagating in multiple directions.

Abstract: Disclosed are highly efficient multiphoton absorbing compounds and methods of their use. The compounds generally include a bridge of pi-conjugated bonds connecting electron donating groups or electron accepting groups. The bridge may be substituted with a variety of substituents as well. Solubility, lipophilicity, absorption maxima and other characteristics of the compounds may be tailored by changing the electron donating groups or electron accepting groups, the substituents attached to or the length of the pi-conjugated bridge. Numerous photophysical and photochemical methods are enabled by converting these compounds to electronically excited states upon simultaneous absorption of at least two photons of radiation. The compounds have large two-photon or higher-order absorptivities such that upon absorption, one or more Lewis acidic species, Lewis basic species, radical species or ionic species are formed.

Abstract: The sulfide has the following composition, and the photoelectric element uses the sulfide. (1) The sulfide contains Cu, Zn, and Sn as a principal component. (2) When x is a ratio of Cu/(Zn+Sn), y is a ratio of Zn/Sn (x and y being atomic ratios), and the composition of the sulfide is represented by the (x, y) coordinates, with the points A=(0.78, 1.32), B=(0.86, 1.32), C=(0.86, 1.28), D=(0.90, 1.23), E=(0.90, 1.18), and F=(0.78, 1.28), the composition (x, y) of the sulfide is on any one of respective straight lines connecting the points A?B?C?D?E?F?A in that order, or within an area enclosed by the respective straight lines.

Abstract: Use of TiOF2 as semiconductor in a photoelectric conversion device, in particular in a dye-sensitized solar cell. A photoelectric conversion device, in particular a dye-sensitized solar cell, comprising a semiconductor layer containing at least TiOF2. The TiOF2 is preferably used in the form of nanoparticles. Dyes, method(s) of making them, and their use in photoelectric conversion devices, especially in dye-sensitized solar cells. A dye-sensitized solar cell comprising at least one fluorinated compound as a dye and at least TiOF2 as semiconductor.

Abstract: A metal complex dye, containing a ligand LL1 having a structure represented by Formula (I): wherein R1 and R2 represent a specific substituent; L1 and L2 represent a group composed of at least one kind of group selected from the group consisting of an ethenylene group, an ethynylene group and an arylene group, and conjugate with R1 or R2, and the bipyridine; the ethenylene group and the arylene group may be substituted or unsubstituted; R3 and R4 represent a substituent; n1 and n2 represent an integer of 0 to 3; A1 and A2 represent an acidic group or a salt thereof; and n3 and n4 represent an integer of 0 to 3.

Abstract: A method of manufacturing a biopolymer optical device includes providing a polymer, providing a substrate, casting the polymer on the substrate, and enzymatically polymerizing an organic compound to generate a conducting polymer between the provided polymer and the substrate. The polymer may be a biopolymer such as silk and may be modified using organic compounds such as tyrosines to provide a molecular-level interface between the provided bulk biopolymer of the biopolymer optical device and a substrate or other conducting layer via a tyrosine-enzyme polymerization. The enzymatically polymerizing may include catalyzing the organic compound with peroxidase enzyme reactions. The result is a carbon-carbon conjugated backbone that provides polymeric “wires” for use in polymer and biopolymer optical devices. An all organic biopolymer electroactive material is thereby provided that provides optical functions and features.

Abstract: The present invention relates conductive nanostructured copolymer materials, such as thin film. In particular, the nanostructured copolymer material comprises plurality of chains substantially parallel to each other, each conductive chain comprising a plurality of conductive polyacetylene polymer blocks positioned along the chain and a plurality of polar poly(vinyl alcohol) polymer blocks in between the polyacetylene polymer blocks to form a pattern of alternatively repeating polyacetylene polymer blocks and poly(vinyl alcohol) polymer blocks and a ratio of polyacetylene polymer to poly(vinyl alcohol) polymer to provide the nanostructured copolymer material with conductivity of at least 1 S/cm. In some aspects, the invention relates to photoelectric devices comprising a nanostructured copolymer material and capable to convert light to electrical current.

Abstract: A compound semiconductor contains main constituent elements all of which satisfy the relationship (Cu1-wAw)2(1+a)(Zn1-xBx)1+b(Sn1-yCy)1+c(Sn1-zSez)4(1+d) and having a CZTSX-based compound as a main phase, where ?0.3?a?0.3, ?0.3 ?b?0.3, ?0.3?c?0.3, ?0.3?d?0.3, 0?w<0.5, 0?x <0.5, 0?y<0.5, 0?z<1.0 and 0<x+y+z+w. The element A is at least one element selected from the group consisting of group Ia elements, group IIa elements, group Ib elements (excluding Cu) and group IIb elements. The element B is at least one element selected from the group consisting of group IIa elements and group Ib elements. The element C is at least one element selected from the group consisting of Zn, group IIIb elements and group IVb elements. A compound in which x=y=z=0 and the element A is Ag, and a compound in which x=y=w=0 are_excluded from the formula.

Abstract: A wet-chemical method of producing a black silicon substrate. The method comprising soaking single crystalline silicon wafers in a predetermined volume of a diluted inorganic compound solution. The substrate is combined with an etchant solution that forms a uniform noble metal nanoparticle induced Black Etch of the silicon wafer, resulting in a nanoparticle that is kinetically stabilized. The method comprising combining with an etchant solution having equal volumes acetonitrile/acetic acid:hydrofluoric acid:hydrogen peroxide.

Abstract: Perovskite semiconductor thin films and the method of making Perovskite semiconductor thin films are disclosed. Perovskite semiconductor thin films were deposited on inexpensive substrates such as glass and ceramics. CsSnI3 films contained polycrystalline domains with typical size of 300 nm and larger. It is confirmed experimentally that CsSnI3 compound in its black phase is a direct band-gap semiconductor, consistent with the calculated band structure from the first principles.

Abstract: This invention relates generally to devices constructed from quasicrystalline heterostructures. In preferred embodiments, two or more dielectric materials are arranged in a two- or three-dimensional space in a lattice pattern having at least a five-fold symmetry axis and not a six-fold symmetry axis, such that the quasicrystalline heterostructure exhibits an energy band structure in the space, the band structure having corresponding symmetry, which symmetry is forbidden in crystals, and which band structure comprises a complete band gap. The constructed devices are adapted for manipulating, controlling, modulating, trapping, reflecting and otherwise directing waves including electromagnetic, sound, spin, and surface waves, for a pre-selected range of wavelengths propagating within or through the heterostructure in multiple directions.

Abstract: Use of rylene derivatives I with the following definition of the variables: X together both —COOM; Y a radical -L-NR1R2??(y1) -L-Z—R3??(y2) the other radical hydrogen; together both hydrogen; R is optionally substituted (het)aryloxy, (het)arylthio; P is —NR1R2; B is alkylene; optionally substituted phenylene; combinations thereof; A is —COOM; —SO3M; —PO3M2; D is optionally substituted phenylene, naphthylene, pyridylene; M is hydrogen; alkali metal cation; [NR5]4+; L is a chemical bond; optionally indirectly bonded, optionally substituted (het)arylene radical; R1, R2 are optionally substituted (cyclo)alkyl, (het)aryl; together optionally substituted ring comprising the nitrogen atom; Z is —O—; —S—; R3 is optionally substituted alkyl, (het)aryl; R? is hydrogen; optionally substituted (cyclo)alkyl, (het)aryl; R5 is hydrogen; optionally substituted alkyl (het)aryl; m is 0, 1, 2; n, p m=0: 0, 2, 4 where: n+p=2, 4, if appropriate 0; m=1: 0, 2, 4 where: n+p=0, 2, 4; m=2: 0, 4, 6 where:

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4Sb12-n-zQ?nSez, where Q? is at least one selected from the group consisting of O and S, 0<x?0.5, 0<n?2 and 0?z<2.

Abstract: Protein scaffolds from tobacco mosaic virus coat protein modified to incorporate polyhistidine can bind to a metal or a dye while having improved self-assembly characteristics. The scaffold can take the form of tubes or disks, and can further be formed into dual plasmonic ring resonators. Such self-assembled structures provide useful optical properties.

Abstract: The invention relates to novel polymers containg repeating units based on benzodifuran, benzodipyrrole or benzodithiophene, monomers and methods for their preparation, their use as semiconductors in organic electronic (OE) devices, especially in organic photovoltaic (OPV) devices, and to OE and OPV devices comprising these polymers.

Abstract: This invention relates to a process for the phase-controlled synthesis of ternary and quaternary mixed-metal sulfide nanoparticles by reacting soft metal ions with hard metal ions in a high-boiling organic solvent in the presence of a complexing and activating ligands to control the reactivity of the metal ions. Ternary and quaternary mixed metal sulfides nanoparticles of copper, sulfur, and iron, aluminum, tin, and silicon are preferred. This invention also relates to the phase controlled preparation of polymorphs of bornite nanoparticles and the phase controlled preparation of stabilized ?- and ?-chalconite nanoparticles.

Abstract: Provided is an indole compound represented by the following general formula (1): wherein in formula (1), R1 and R2 each independently represent a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group or a substituted or unsubstituted heterocyclic group; R3 to R6 each independently represent a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, an alkoxy group or a hydroxy group; X represents an organic group having an acidic group; and Z represents a linking group including at least one selected from the group consisting of a substituted or unsubstituted aromatic ring, a substituted or unsubstituted heterocyclic ring, a vinylene group and an ethynylene group.

Abstract: Provided is a glass for electrode formation, comprising, as a glass composition in terms of mass %, 65.2 to 90% of Bi2O3, 0 to 5.4% of B2O3, and 0.1 to 34.5% of MgO+CaO+SrO+BaO+ZnO+CuO+Fe2O3+Nd2O3+CeO2+Sb2O3 (total content of MgO, CaO, SrO, BaO, ZnO, CuO, Fe2O3, Nd2O3, CeO2, and Sb2O3).

Abstract: Provided is a photoelectric conversion element containing a pair of opposite electrodes having therebetween: a semiconductor layer containing a sensitizing dye which is supported by a semiconductor; and a charge transport layer, wherein the sensitizing dye is a compound represented by Formula (1),

Abstract: A method for controlled growth of silicon carbide and structures produced by the method are disclosed. A crystal of silicon carbide (SiC) can be grown by placing a sacrificial substrate in a growth zone with a source material. The source material may include a low-solubility impurity. SiC is then grown on the sacrificial substrate to condition the source material. The sacrificial substrate is then replaced with the final substrate, and SiC is grown on the final substrate. A single crystal of silicon carbide is produced, wherein the crystal of silicon carbide has substantially few micropipe defects. Such a crystal may also include a substantially uniform concentration of the low-solubility impurity, and may be used to make wafers and/or SiC die.