Abstract: Provided are metal oxide varistors comprising a sintered ceramic, in which the ceramic comprises, by weight, about 91.0% to about 97.0% ZnO, at least 0.3% Mn, at least 0.4% Bi, at least 1.0% Sb, and 0.50% or less Co. The metal oxide varistors as disclosed herein may exhibit reduced power dissipation, improved thermal stability, and may be produced at a lower cost relative to conventional MOV devices.

Abstract: A lead-free insulating ceramic coating zinc oxide arrester valve and a method for manufacturing thereof are disclosed. In an embodiment a method includes preparing an initial powder from starting materials with the following mass percentages: ZnO: 86-95%; Bi2O3: 1.0-3.0%; Co3O4: 0.5-1.5%; Mn3O4: 0.2-1.0%; Sb2O3: 3.0-9.0 %; NiO: 0.2-1.0%; and SiO2: 1.0-3.0%, preparing a ceramic coating powder by mixing the initial powder, deionized water and first grinding balls, milling the mixture, and drying and pulverizing the mixture, preparing a ceramic coating slurry by mixing a PVA solution, the ceramic coating powder and second grinding balls and milling the mixture, applying the ceramic coating slurry to a green body, heating and debinding the ceramic coating slurry with the green body thereby forming a resistor element and sintering the resistor element thereby obtaining a zinc oxide surge arrester valve block having a lead-free insulating ceramic coating.

Abstract: A varistor may include a varistor ceramic that includes zinc oxide having a molar percent greater than 90 percent and a set of metal oxides, where the set of metal oxides includes Bi2O3 having a molar fraction between 0.2 and 2.5 percent; Co3O4 having a molar fraction between 0.2 and 1.2 percent; Mn3O4 having a molar fraction between 0.05 and 0.5 percent; Cr2O3 having a molar fraction between 0.05 and 0.5 percent; NiO having a molar fraction between 0.5 and 1.5 percent; Sb2O3 oxide having a molar fraction between 0.05 and 1.5 percent; B2O3 having a molar fraction between 0.001 to 0.03 percent; and aluminum in the form of an oxide having a molar fraction between 0.001 and 0.05 percent.

Abstract: In the method for producing a metal oxide film according to the present invention, a solution containing an alkyl metal is sprayed onto a substrate placed under non-vacuum. Further, when the solution is sprayed, a dopant solution containing a dopant including an inorganic compound is sprayed onto the substrate.

Abstract: In a method for producing a metal oxide film according to the present invention, a solution containing zinc is sprayed onto a substrate placed under non-vacuum, and then, a dopant solution containing a dopant is sprayed onto the substrate. After that, a deposited metal oxide film is subjected to a resistance reducing treatment. A molar concentration of the dopant supplied to the substrate with respect to a molar concentration of the zinc supplied to the substrate is not less than a predetermined value.

Abstract: The present invention provides a voltage nonlinear resistor containing zinc oxide as a major component, wherein the degree of orientation f(100) of the (100) plane of zinc oxide is 0.40 or lure and is represented by the following equation: f(100)=I(100)/(I(100)+I(002)+I(101)), where I(hkl) represents the peak intensity (integral) of a (hkl) plane.

Abstract: A high-fidelity dopant paste is disclosed. The high-fidelity dopant paste includes a solvent, a set of non-glass matrix particles dispersed into the solvent, and a dopant.

Abstract: In a process for manufacturing doped semiconductor single crystal comprises solidifying in a crucible, the amount of dopant is added into the semiconductor melt after the beginning of the crystal growth onto the seed crystal, or after at least partial solidification of the semiconductor single crystal in a conical or tapered portion of the crucible. Dopant may be partially added in advance into the crucible, with the remainder added into the semiconductor melt as described. Type III-V semiconductor single crystals or wafers having a diameter of at least about 100 mm, can be prepared having an electrical conductivity of at least about 250 Siemens/cm, and/or an electric resistivity of at most about 4×10?3 ?cm, and/or a significantly improved ratio of hall mobility to charge carrier concentration.

Abstract: A current-voltage non-linear resistor (10) comprises a sintered body (20) of a mixture whose chief constituent is zinc oxide and including as auxiliary constituents at least bismuth (Bi), antimony (Sb), manganese (Mn), cobalt (Co) and nickel (Ni). Also, the average grain size of the mixture is no more than 0.4 ?m; and the average grain size of the zinc oxide grains in the sintered body (20) is no more than 7.5 ?m and the standard deviation based on the grain size distribution of zinc oxide grains in the sintered body (20) is no more than 15% of the average grain size of the zinc oxide grains.

Abstract: Provided is a zinc oxide sintered compact tablet enabling a transparent conductive film having no pinholes defects to be stably obtained during vacuum deposition film formation by suppressing the occurrence of the splashing phenomenon. A zinc oxide sintered compact tablet having hexagonal crystal structure, wherein when the integrated intensity of surface (103) and surface (110) found through X-ray diffraction analysis using CuK? radiation is taken to be I(103) and I(110) respectively, the orientation of the uniaxially pressed surface that is expressed by I(103)/(I(103)+I(110)) is 0.48 or more is obtained by performing pressurized formation of a granulated powder composed of a zinc oxide powder or a powder mixture of zinc oxide and an added element as a dopant and having a percentage of donut shaped secondary particles of 50% or more, sintering at normal pressure and a temperature of 800° C. to 1300° C.

Abstract: A thermal neutron shield comprising concrete with a high percentage of the element Boron. The concrete is least 54% Boron by weight which maximizes the effectiveness of the shielding against thermal neutrons. The accompanying method discloses the manufacture of Boron loaded concrete which includes enriching the concrete mixture with varying grit sizes of Boron Carbide.

Abstract: [Task] To provide a low-melting point glass composition for a lead-free conductive paste material with which a high collection efficiency can be obtained in a conductive paste for a crystalline Si solar battery. [Means for establishing the Task] To provide a conductive paste material which is characterized by containing a SiO2—B2O3—ZnO—RO—R2O type lead-free low-melting-point glass that contains, by wt %, 2 to 10% of SiO2, 18 to 30% of B2O3, 0 to 10% of Al2O3, 0 to 25% of ZnO, 20-50% of RO(MgO+CaO+SrO+BaO), and 10 to 17% of R2O (Li2O+Na2O+K2O).

Abstract: A conductive paste composition for a solar cell includes a conductive powder, a glass frit, and a vehicle, the glass frit consisting of glass containing 0.6 to 18.0 (mol %) Li2O, at least one of 0.1 to 6.0 (mol %) P2O5 and 0.1 to 4.0 (mol %) Sb2O5, 20 to 62 (mol %) PbO, 1 to 18 (mol %) B2O3, 18 to 65 (mol %) SiO2, 0 to 6 (mol %) Al2O3, 0 to 6 (mol %) TiO2, and 0 to 30 (mol %) ZnO in oxide conversion, the glass having a ratio of Pb/Si (mol ratio) within a range of 0.5 to 1.7.

Abstract: The present invention concerns a method for the generation of a transparent conductive oxide display coating (TCO display layer), in particular a transparent conductive oxide display coating as a transparent contact for flat panel displays and the like. The TCO display layer is generated by depositing zinc oxide and additionally aluminium, indium, gallium, boron, nitrogen, phosphorous, chlorine, fluorine or antimony or a combination thereof, with the process atmosphere containing hydrogen. These TCO layers can be realized in a particularly simple and cost-effective way compared to ITO. The properties of the inventive TCO layers are nearly as good as those for ITO, regarding high transmittance and low resistance.

Abstract: The invention relates to a metal boride precursor mixture comprising a metal oxide and a boric oxide combined in such a manner so as to produce intimately linked clusters wherein the boric oxide is found within the metal oxide. Furthermore, the invention discloses a carbon composite material made with the metal boride precursor mixture and a carbonaceous component. Finally, the invention also teaches the process for preparing the metal boride precursor mixture comprising steps of providing a metal oxide and a boron oxide, mechanically mixing the metal oxide and the boron oxide at a temperature that liquefies the boron oxide and may impregnate the metal oxide to produce an intimately linked cluster of metal oxide and boric oxide.

Abstract: This invention provides a dielectric composition comprising a dielectric which is fireable in air at a temperature in the range of about 450° C. to about 550° C. and a conductive oxide selected from the group consisting of antimony-doped tin oxide, tin-doped indium oxide, a transition metal oxide which has mixed valence states or will form mixed valence states after firing in a nitrogen atmosphere at a temperature in the range of about 450° C. to about 550° C. and normally conducting precious metal oxides such as ruthenium dioxide, wherein the amount of conductive oxide present is from about 0.25 wt % to about 25 wt % of the total weight of dielectric and conductive oxide. This dielectric composition has reduced electrical resistance and is useful in electron field emission devices to eliminate charging of the dielectric in the vicinity of the electron emitter and the effect of static charge induced field emission.

Abstract: Conductive curable compositions contain a free radical polymerizable monomer, oligomer or polymer (i); an organoborane amine complex (ii), and an electrically or thermally conductive filler (iii). The conductive curable compositions can also contain an amine reactive compound having amine reactive groups (iv); and (v) a component capable of generating a gas when mixed with a compound bearing active hydrogen and a catalyst. The electrically conductive curable compositions can be used in composite articles of manufacture in which substrates are coated or bonded together with the composition and cured; and as electrically conductive rubbers, electrically conductive tapes, electrically conductive adhesives, electrically conductive foams, and electrically conductive pressure sensitive adhesives.

Abstract: The invention relates to glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells.

Abstract: Multilayer ceramic chip capacitors which satisfy X7R and BX requirements and which are compatible with silver-palladium internal electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers comprise a lead-free and cadmium-free barium titanate base material doped with other metal oxides such oxides of zinc, boron, bismuth, cerium, tungsten, copper, manganese, neodymium, niobium, silver, barium, silicon and nickel in various combinations. The dielectric ceramic materials herein can be sintered together (fired) at less than 1000° C. with an inner electrode having more than 80 wt % Ag and less than 20 wt % Pd to form a multilayer ceramic capacitor (MLCC).

Abstract: The present invention provides a method for forming a black electrode by performing sintering at a temperature in the range of 500-600° C. after applying a lead-free black conductive composition to a substrate. The aforementioned black electrode comprises a binder comprising a crystallized glass component. The aforementioned black conductive composition comprises conductive particles of black RuO2, lead-free black ruthenium-based polyoxide, and mixtures thereof in an amount of 4-30 wt %, based on the total weight of the composition, a lead-free non-conductive black oxide in an amount of 0-30 wt %, based on the total weight of the composition, and a lead-free bismuth-based glass binder in an amount of 10-50 wt %, based on the total weight of the composition.

Abstract: In a dielectric composition for use in formation of a dielectric layer in a plasma display panel, comprising glass powder, the glass powder is powder of glass which contains PbO of 50% or less and CuO as one of essential elements contained in the glass for preventing color change of the dielectric layer from being caused due to reaction with Ag electrodes in the plasma display panel. Ceramics powder can be mixed with the glass powder. The dielectric composition can also be provided in a form of paste, alternatively in a form of a green sheet.

Abstract: A glass containing no lead and comprising, calculated as oxides: 40-60 wt. % ZnO, 15-35 wt. % B2O3, 1-16 wt. % SiO2, 1-10 wt. % Al2O3, 2-15 wt. % MnO2, and at least one selected from the group consisting of Li2O, Na2O and K2O in their total of 0.5-10 wt. %, and a glass with the above-described components where a total of at least one selected from the group consisting of Li2O, Na2O and K2O is 0-5 wt. %, and at least one selected from the group consisting of MgO, CaO, TiO2, Cr2O3, ZrO2, Ta2O5, SnO2, and Fe2O3 is further included in their total of 0.1-5 wt. %. A conductive paste using such a glass as an inorganic binder has a superior binder removal ability and a good sinterability and can form dense conductors with excellent characteristics with respect to resistance to plating solutions, adhesive strength, resistance to thermal shocks, etc.

Abstract: A material usable for the electrodes and the dielectric layer plasma display panels and capable of reducing the occurrence of yellowing and a high-image-quality plasma display panel using the material are provided. Using glass powder containing 25 to 50 wt % of Bi2O3, 5 to 35 wt % of B2O3, 10 to 20 wt % of ZnO, 5 to 20 wt % of BaO, 0 to 15 wt % of SiO2 and 0 to 10 wt % of Al2O3, the electrodes and the dielectric layer of a plasma display panel are formed.

Abstract: A conductive paste for defogging heat wires of automobile windows contains a silver powder having particle size in the range of about 0.1 to 20 &mgr;m, a molybdenum compound such as molybdenum silicide or molybdenum boride, a glass frit having a softening point of 730° C. or less and an organic vehicle. The conductive paste can uniformly darken the conductive heat wire regions of the automobile window without producing any harmful substances. Also, it can ensure sufficient bonding strength of lead wires.

Abstract: The material for transient voltage suppressors is composed of at least two kinds of evenly-mixed powders including a powder material with non-linear resistance interfaces and a conductive powder. The conductive powder is distributed in the powder with non-linear resistance interfaces to relatively reduce the total number of non-linear resistance interfaces between two electrodes and, as a result, decrease the breakdown voltage of the components.

Abstract: In a dielectric composition for use in formation of a dielectric layer in a plasma display panel, comprising glass powder, the glass powder is powder of glass which contains PbO of 50% or less and CuO as one of essential elements contained in the glass for preventing color change of the dielectric layer from being caused due to reaction with Ag electrodes in the plasma display panel. Ceramics powder can be mixed with the glass powder. The dielectric composition can also be provided in a form of paste, alternatively in a form of a green sheet.

Abstract: A glass containing no lead and comprising, calculated as oxides: 40-60 wt. % ZnO, 15-35 wt. % B2O3, 1-16 wt. % SiO2, 1-10 wt. % Al2O3, 2-15 wt. % MnO2, and at least one selected from the group consisting of Li2O, Na2O and K2O in their total of 0.5-10 wt. %, and a glass with the above-described components where a total of at least one selected from the group consisting of Li2O, Na2O and K2O is 0-5 wt. %, and at least one selected from the group consisting of MgO, CaO, TiO2, Cr2O3, ZrO2, Ta2O5, SnO2, and Fe2O3 is further included in their total of 0.1-5 wt. %. A conductive paste using such a glass as an inorganic binder has a superior binder removal ability and a good sinterability and can form dense conductors with excellent characteristics with respect to resistance to plating solutions, adhesive strength, resistance to thermal shocks, etc.

Abstract: A nonlinear resistance composition comprising: zinc oxide as a major component; bismuth oxide present at 0.1-5.0: mol % of said zinc oxide, titanium oxide present at 0.1-5.0: mol % of said zinc oxide, and silver oxide present at 0.5*10−3-20*10−3: mol % of said zinc oxide. Such nonlinear resistance components can further comprise antimony oxide, cobalt oxide, manganese oxide, nickel oxide, aluminum oxide and/or boric oxide.