Zinc Compound Patents (Class 252/519.5)
  • Patent number: 10069020
    Abstract: The present invention provides a thick-film paste for printing the front-side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-oxide dispersed in an organic medium.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: September 4, 2018
    Assignee: E I DU PONT DE NEMOURS AND COMPANY
    Inventors: Alan Frederick Carroll, Kenneth Warren Hang, Brian J. Laughlin, Kurt Richard Mikeska, Carmine Torardi, Paul Douglas Vernooy
  • Patent number: 9318307
    Abstract: Provided is a zinc oxide sputtering target, which can effectively suppress the occurrence of break or crack in the target during sputtering to enable production of a zinc oxide transparent conductive film with high productivity. The zinc oxide sputtering target is composed of a zinc oxide sintered body comprising zinc oxide crystal grains, wherein the zinc oxide sputtering target has a sputter surface having a (100) crystal orientation degree of 50% or more.
    Type: Grant
    Filed: June 16, 2014
    Date of Patent: April 19, 2016
    Assignee: NGK Insulators, Ltd.
    Inventors: Jun Yoshikawa, Katsuhiro Imai, Koichi Kondo
  • Patent number: 9243962
    Abstract: Disclosed herein is a composition of a sensor element, a temperature sensor having the composition of the sensor element and a method of manufacturing the temperature sensor. The sensor element composition comprising Y2O3, Al2O3, MnO2, NiO and Fe2O3, and further comprising ZrO2 and a temperature sensor comprising the same. The method comprising: weighing the composition for a sensor element; mixing the composition; calcining the mixture at about 1000° C.˜1400° C. for 30 min˜5 hrs; pulverizing the calcined mixture to obtain powder; disposing the powder type mixture into a mold; inserting in parallel a plurality of lead wires into the powder type mixture; pressure molding the powder type mixture; and sintering the pressure molded material at about 1300° C.˜1500° C. for 30 min˜5 hrs.
    Type: Grant
    Filed: December 14, 2012
    Date of Patent: January 26, 2016
    Assignee: Hyundai Motor Company
    Inventors: Na-Yun Ko, Tae Seung Lee, Jin-Seong Park, Woon-Young Lee
  • Patent number: 9196402
    Abstract: An electric component assembly comprising a semiconductor component (1) and a carrier is specified, wherein the carrier contains a highly thermally conductive ceramic and is connected to a varistor body. Heat from the semiconductor component can be at least partially dissipated to the carrier (3) by means of the varistor body.
    Type: Grant
    Filed: May 22, 2009
    Date of Patent: November 24, 2015
    Assignee: EPCOS AG
    Inventors: Thomas Feichtinger, Guenter Engel, Axel Pecina
  • Publication number: 20150137115
    Abstract: The present disclosure provides a solution for a metal oxide semiconductor thin film, including metal hydroxides dissolved in an aqueous or nonaqueous solvent and an acid/base titrant for controlling solubility of metal hydroxides. A solution is synthesized to improve stability and semiconductive performance of a device through addition of other metal hydroxides. The solution is applied on a substrate and annealed by using various annealing apparatuses to obtain a high-quality metal oxide thin film at low temperatures. The thin film is optically transparent, and thus can be applied to thin films for various electronic devices, solar cells, various sensors, memory devices, and the like.
    Type: Application
    Filed: March 4, 2011
    Publication date: May 21, 2015
    Applicant: Industry-Academic Cooperation Foundation, Yonsei University
    Inventors: Jooho Moon, Youngmin Jeong, Tae Hwan Jun, Keun Kyu Song, Areum Kim, Yangho Jung
  • Patent number: 8986570
    Abstract: The present invention discloses a method for producing a positive electrode active material for a lithium secondary battery constituted by a lithium-nickel-cobalt-manganese complex oxide with a lamellar structure, the method including: (1) a step of preparing a starting source material for producing the complex oxide including a lithium supply source, a nickel supply source, a cobalt supply source, and a manganese supply source; (2) a step of pre-firing the starting source material by heating at a pre-firing temperature that has been set to a temperature lower than 800° C. and higher than a melting temperature of the lithium supply source; and (3) a step of firing the pre-fired material obtained in the pre-firing step by raising a temperature to a temperature range higher than the pre-firing temperature.
    Type: Grant
    Filed: December 14, 2009
    Date of Patent: March 24, 2015
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Hiroki Nagai, Hidekazu Hiratsuka
  • Publication number: 20150076421
    Abstract: The invention relates to ammoniacal formulations comprising a) at least one hydroxozinc compound and b) at least one compound of an element of the 3rd primary group, to the use thereof, to a method using said formulations to produce layers comprising ZnO and to electronic components produced using same.
    Type: Application
    Filed: March 26, 2013
    Publication date: March 19, 2015
    Applicant: Evonik Industries AG
    Inventors: Juergen Steiger, Duy Vu Pham, Dennis Weber, Silviu Botnaras
  • Publication number: 20150079863
    Abstract: The present disclosure is directed to composite or articles for protective clothing, which include an anti-static layer. The antistatic layer can 1), include an antistatic agent comprising an electronically conductive material, and the antistatic layer can have a visible light transmission of at least 70%; 2) the anti-static layer can have a surface electrical resistivity (SER), and/or a water electrode resistivity (WER) of no greater than 1011 ohms/square and a visible light transmission of at least 70%; or 3) the anti-static layer has an electrical resistivity, measured in ohms/square, which varies by no more than 1.5 order of magnitude over a range of relative humidity of 5% to 95%, and a visible light transmission of at least 70%.
    Type: Application
    Filed: August 8, 2014
    Publication date: March 19, 2015
    Inventors: Debasis Majumdar, Ryan C. Hirschey, Jenna Reynolds
  • Patent number: 8951447
    Abstract: The optically pumped semiconductor according to the present invention is an optically pumped semiconductor that is a semiconductor of a perovskite oxide. The optically pumped semiconductor has a composition represented by a general formula: BaZr1-xMxO3-?, where M denotes at least one element selected from trivalent elements, x denotes a numerical value more than 0 but less than 0.8, and ? denotes an amount of oxygen deficiency that is a numerical value more than 0 but less than 1.5. The optically pumped semiconductor has a crystal system of a cubic, tetragonal, or orthorhombic crystal. When lattice constants of the crystal system are referred to as a, b, and c, provided that a?b?c, conditions that 0.41727 nm?a, b, c?0.42716 nm and a/c?0.98 are satisfied.
    Type: Grant
    Filed: April 26, 2010
    Date of Patent: February 10, 2015
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Noboru Taniguchi, Kenichi Tokuhiro, Takahiro Suzuki, Tomohiro Kuroha, Takaiki Nomura, Kazuhito Hatoh
  • Patent number: 8932495
    Abstract: Embodiments of the invention generally provide hydrogen-doped and/or fluorine-doped transparent conducting oxide (TCO) materials and processes for forming such doped TCO materials. In one embodiment, a method for fabricating a doped TCO on a substrate surface includes forming a TCO material on a substrate, exposing the TCO material to a hydrogen plasma while forming a hydrogen-doped TCO material during an atmospheric pressure plasma (APP) process, wherein the hydrogen-doped TCO material contains atomic hydrogen at a concentration within a range from about 1 at % (atomic percent) to about 30 at %, and exposing the hydrogen-doped TCO material to a thermal annealing process. In another embodiment, the method includes exposing the TCO material to a fluorine plasma while forming a fluorine-doped TCO material during the APP process, wherein the fluorine-doped TCO material contains atomic fluorine at a concentration within a range from about 1 at % to about 30 at %.
    Type: Grant
    Filed: March 12, 2012
    Date of Patent: January 13, 2015
    Assignee: Clearist, Inc.
    Inventors: Paul Phong Nguyen, Scott Allen Jewhurst
  • Patent number: 8894889
    Abstract: A compound semiconductor precursor ink composition includes an ink composition for forming a chalcogenide semiconductor film and a peroxide compound mixed with the ink composition. A method for forming a chalcogenide semiconductor film and a method for forming a photovoltaic device each include using the compound semiconductor precursor ink composition containing peroxide compound to form a chalcogenide semiconductor film.
    Type: Grant
    Filed: May 9, 2013
    Date of Patent: November 25, 2014
    Assignee: Neo Solar Power Corp.
    Inventors: Feng-Yu Yang, Ching Ting, Yueh-Chun Liao
  • Publication number: 20140332733
    Abstract: Provided herein are nanofibers and processes of preparing nanofibers. In some instances, the nanofibers are metal and/or ceramic nanofibers. In some embodiments, the nanofibers are high quality, high performance nanofibers, highly coherent nanofibers, highly continuous nanofibers, or the like. In some embodiments, the nanofibers have increased coherence, increased length, few voids and/or defects, and/or other advantageous characteristics. In some instances, the nanofibers are produced by electrospinning a fluid stock having a high loading of nanofiber precursor in the fluid stock. In some instances, the fluid stock comprises well mixed and/or uniformly distributed precursor in the fluid stock. In some instances, the fluid stock is converted into a nanofiber comprising few voids, few defects, long or tunable length, and the like.
    Type: Application
    Filed: August 30, 2012
    Publication date: November 13, 2014
    Applicant: CORNELL UNIVERSITY
    Inventors: Yong Lak Joo, Nathaniel S. Hansen, Daehwan Cho
  • Patent number: 8871119
    Abstract: A composite oxide sintered body includes In, Zn, and Sn, and has a relative density of 90% or more, an average crystal grain size of 10 ?m or less, and a bulk resistance of 30 m?cm or less, the number of tin oxide aggregate particles having a diameter of 10 ?m or more being 2.5 or less per mm2 of the composite oxide sintered body.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: October 28, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Koki Yano, Hirokazu Kawashima
  • Patent number: 8858844
    Abstract: A sputtering target including an oxide sintered body which includes In, Ga and Zn and includes a structure having a larger In content than that in surrounding structures and a structure having larger Ga and Zn contents than those in surrounding structures.
    Type: Grant
    Filed: November 16, 2010
    Date of Patent: October 14, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Koki Yano, Masayuki Itose
  • Patent number: 8858843
    Abstract: A high-fidelity dopant paste is disclosed. The high-fidelity dopant paste includes a solvent, a set of non-glass matrix particles dispersed into the solvent, and a dopant.
    Type: Grant
    Filed: December 14, 2010
    Date of Patent: October 14, 2014
    Assignee: Innovalight, Inc.
    Inventors: Elena Rogojina, Maxim Kelman, Giuseppe Scardera
  • Publication number: 20140302579
    Abstract: The present invention concerns a device comprising (i) a composite material comprising (1) a plurality of conductive or semiconductive nanotubes, and (2) a matrix arranged between these nanotubes and (ii) means allowing said composite material to be subjected to an electric field. The present invention also concerns the uses of said device in particular to defoul or to modify a composite material and to electroporate at least one cell.
    Type: Application
    Filed: October 8, 2012
    Publication date: October 9, 2014
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX
    Inventors: Pascal Boulanger, Alexandre Brouzes
  • Patent number: 8835052
    Abstract: A negative electrode active material for an electric device. The negative electrode active material including an alloy having a composition formula SixTiyZnz, where (1) x+y+z=100, (2) 38?x<100, (3) 0<y<62, and (4) 0<z<62 in terms of mass percent.
    Type: Grant
    Filed: November 26, 2010
    Date of Patent: September 16, 2014
    Assignee: Nissan Motor Co., Ltd.
    Inventors: Manabu Watanabe, Osamu Tanaka
  • Patent number: 8828280
    Abstract: The paste composition for forming a back electrode of solar cell 10 provided by the present invention contains, as solids, an aluminum powder, a glass powder and a composite powder composed of a particulate composite of a metal oxide with a silicon-containing organic or inorganic compound. This composite powder is contained in an amount of at least 0.01 mass % but less than 0.45 mass % given 100 mass % as the total of the composite powder, the aluminum powder and the glass powder.
    Type: Grant
    Filed: December 21, 2010
    Date of Patent: September 9, 2014
    Assignee: Noritake Co., Ltd
    Inventors: Kosuke Ochi, Shinji Senda, Masao Yamagishi, Mamiko Kume
  • Patent number: 8822075
    Abstract: A negative electrode active material for an electric device, including an alloy having a composition formula SixZnyAlz, where x++y=100 , 26?x?47, 18?y?44, and 22?z?46 are satisfied.
    Type: Grant
    Filed: November 26, 2010
    Date of Patent: September 2, 2014
    Assignee: Nissan Motor Co., Ltd.
    Inventors: Manabu Watanabe, Osamu Tanaka, Takashi Miyamoto
  • Patent number: 8801972
    Abstract: A process of preparing a zinc chalcogenide includes providing a solution of 8-hydroxyquinoline; a zinc precursor; and a reaction solvent; isolating a precipitate from the solution; and calcining the precipitate to form the zinc chalcogenide. Additionally, a polymer composite may include a polymer, bis(8-hydroxyquinolinato)zinc, and elemental sulfur or bis(8-hydroxyquinolinato)zM, wherein M is a metal ion and the value of z is equivalent to the oxidation state of the metal ion.
    Type: Grant
    Filed: February 10, 2012
    Date of Patent: August 12, 2014
    Assignee: Indian Institute of Technology Kanpur
    Inventor: S. Sundar Manoharan
  • Patent number: 8790551
    Abstract: An electrolyte composition containing an ionic liquid and conductive particles, an electrolyte composition containing an ionic liquid and oxide semiconductor particles and optionally containing conductive particles, and an electrolyte composition containing an ionic liquid and insulating particles are provided. Furthermore, a photoelectric conversion element comprising: a working electrode, the working electrode comprising an electrode substrate and an oxide semiconductor porous film formed on the electrode substrate and sensitized with a dye; a counter electrode disposed opposing the working electrode; and an electrolyte layer made of these electrolyte compositions is provided.
    Type: Grant
    Filed: June 16, 2009
    Date of Patent: July 29, 2014
    Assignee: Fujikura Ltd.
    Inventors: Hiroki Usui, Nobuo Tanabe, Hiroshi Matsui, Tetsuya Ezure, Shozo Yanagida
  • Patent number: 8784698
    Abstract: Disclosed are inorganic nanoparticles comprising a body comprising cadmium and/or zinc crystallized with selenium, sulfur, and/or tellurium; a multiplicity of phosphonic acid ligands comprising at least about 20% of the total surface ligand coverage; wherein the nanocrystal is capable of absorbing energy from a first electromagnetic region and capable of emitting light in a second electromagnetic region, wherein the maximum absorbance wavelength of the first electromagnetic region is different from the maximum emission wavelength of the second electromagnetic region, thereby providing a Stokes shift of at least about 20 nm, wherein the second electromagnetic region comprises an at least about 100 nm wide band of wavelengths, and wherein the nanoparticle exhibits has a quantum yield of at least about 10%. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.
    Type: Grant
    Filed: May 24, 2011
    Date of Patent: July 22, 2014
    Assignee: Vanderbilt University
    Inventors: Michael A. Schreuder, James R. McBride, Sandra J. Rosenthal
  • Patent number: 8785045
    Abstract: An active material comprises a core particle containing LiCo(1-x)MxO2 and/or Li(Mn(1-y)My)2O4, and a coating part covering at least part of a surface of the core particle, while the coating part contains LiVOPO4. Here, M is at least one element selected from the group consisting of Al, Mg, and transition elements, 0.95?x?0, 0.2?y?0, and V in LiVOPO4 may partly be substituted by at least one element selected from the group consisting of Ti, Ni, Co, Mn, Fe, Zr, Cu, Zn, and Yb.
    Type: Grant
    Filed: April 23, 2008
    Date of Patent: July 22, 2014
    Assignee: TDK Corporation
    Inventor: Tadashi Suzuki
  • Patent number: 8771556
    Abstract: A semiconductor oxide ink composition, a method of manufacturing the composition, and a method of manufacturing a photoelectric conversion element are provided. The semiconductor oxide ink composition for inkjet printing comprises a semiconductor oxide and a solvent, wherein the semiconductor oxide comprises 0.1 to 20 parts by weight relative to 100 parts by weight of the total composition.
    Type: Grant
    Filed: February 14, 2011
    Date of Patent: July 8, 2014
    Assignee: Hyundai Motor Company
    Inventors: Won Jung Kim, Sang Hak Kim, Yong Jun Jang, Yong Gu Kim, Mi Yeon Song, In Woo Song, Ki Chun Lee
  • Patent number: 8771555
    Abstract: An ink composition for forming a chalcogenide semiconductor film and a method for forming the same are disclosed. The ink composition includes a solvent, a plurality of metal chalcogenide nanoparticles and at least one selected from the group consisted of metal ions and metal complex ions. The metal ions and/or complex ions are distributed on the surface of the metal chalcogenide nanoparticles and adapted to disperse the metal chalcogenide nanoparticles in the solvent. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III and group IV elements of periodic table and include all metal elements of a chalcogenide semiconductor material.
    Type: Grant
    Filed: September 16, 2011
    Date of Patent: July 8, 2014
    Assignee: Neo Solar Power Corp.
    Inventors: Yueh-Chun Liao, Feng-Yu Yang, Ching Ting
  • Patent number: 8679375
    Abstract: A practical and environmentally-friendly method, i.e. the high temperature-mechanical mixing by using an internal mixing device and a two-roll open milling device is used to produce the carbon blacks-free electrically conductive sulfur-vulcanised rubber blends of solid poly(butadiene-co-acrylonitrile) and solid sulfonic acid doped polyaniline. The addition of sulfur vulcanization system does not affect the electrical properties of the vulcanised blends. All vulcanised blends prepared by using this method show useful electrical conductivities up to the order of 10?2 S/cm, good tensile strengths up to 18.0 MPa and colorable with the addition of a whitening agent. As a result, they have good potential to be used for manufacturing any antistatic products, electrostatic discharge or dissipative products and electromagnetic or radio frequency interferences shielding products.
    Type: Grant
    Filed: July 5, 2012
    Date of Patent: March 25, 2014
    Assignee: Malaysian Rubber Board
    Inventors: Kok Chong Yong, Che Su Mt Saad
  • Publication number: 20140072698
    Abstract: An electrode for an energy store, in particular for a lithium-ion battery. To achieve a particularly good and long-term stable capacitance, the electrode includes an active material, optionally a binder, optionally a conductive additive, and a sorption agent; intermediate stages of the active material arising during a charging and/or discharging procedure of the energy store may be immobilized by the sorption agent. Furthermore, also described is a method for manufacturing an electrode for an energy store, and the use of a sorption agent for manufacturing an electrode for an electrochemical energy store.
    Type: Application
    Filed: September 6, 2013
    Publication date: March 13, 2014
    Applicant: ROBERT BOSCH GMBH
    Inventors: Marcus WEGNER, Jens GRIMMINGER, Martin TENZER, Jean FANOUS
  • Publication number: 20140050851
    Abstract: Methods of exchanging ligands to form colloidal nanocrystals (NCs) with chalcogenocyanate (xCN)-based ligands and apparatuses using the same are disclosed. The ligands may be exchanged by assembling NCs into a thin film and immersing the thin film in a solution containing xCN-based ligands. The ligands may also be exchanged by mixing a xCN-based solution with a dispersion of NCs, flocculating the mixture, centrifuging the mixture, discarding the supernatant, adding a solvent to the pellet, and dispersing the solvent and pellet to form dispersed NCs with exchanged xCN-ligands. The NCs with xCN-based ligands may be used to form thin film devices and/or other electronic, optoelectronic, and photonic devices. Devices comprising nanocrystal-based thin films and methods for forming such devices are also disclosed. These devices may be constructed by depositing NCs on to a substrate to form an NC thin film and then doping the thin film by evaporation and thermal diffusion.
    Type: Application
    Filed: August 19, 2013
    Publication date: February 20, 2014
    Inventors: Cherie R. Kagan, Aaron T. Fafarman, Ji-Hyuk Choi, Weon-kyu Koh, David K. Kim, Soong Ju Oh, Yuming Lai, Sung-Hoon Hong, Sangameshwar Rao Saudari, Christopher B. Murray
  • Patent number: 8636927
    Abstract: A ZnO deposition material to be used for forming a transparent conductive film is composed of a ZnO pellet made of ZnO powder having a ZnO purity of 98% or more. The pellet includes one or more kinds of elements selected from the group consisting of Y, La, Sc, Ce, Pr, Nd, Pm and Sm. The ZnO pellet is polycrystal or monocrystal. The ZnO film formed by a vacuum film forming method employing the ZnO deposition material as a target material can exhibit excellent conductivity. The vacuum film forming method is preferably an electron beam vapor deposition method, an ion plating method or a sputtering method.
    Type: Grant
    Filed: April 19, 2007
    Date of Patent: January 28, 2014
    Assignee: Mitsubishi Materials Corporation
    Inventor: Yoshitaka Mayuzumi
  • Publication number: 20130334688
    Abstract: The invention relates to the semiconductor material manufacturing technical field. A multi-elements-doped zinc oxide film as well as manufacturing method and application in photo-electric devices thereof are provided. The manufacturing method comprises the following steps: (1) mixing the powder of Ga2O3, Al2O3, SiO2 and ZnO according to the following percentage by mass: 0.5%˜10% of Ga2O3, 0.5%˜5% of Al2O3, 0.5%˜1.5% of SiO2, and the residue of ZnO; (2) sintering the powder mixture as target material; (3) putting the target material into a magnetic sputtering chamber, evacuating, setting-up work pressure of 0.2 Pa-5 Pa, introducing mixed gas of inert gas and hydrogen with a flow rate of 15 sccm˜25 sccm, adopting a sputtering power of 40 W˜200 W, and sputtering on the substrate to obtain the multi-elements-doped zinc oxide film.
    Type: Application
    Filed: March 25, 2011
    Publication date: December 19, 2013
    Applicant: OCEAN'S KING LIGHTING SCIENCE & TECHNOLOGY CO., LTD.
    Inventors: Mingjie Zhou, Ping Wang, Jixing Chen, Hui Huang
  • Patent number: 8568621
    Abstract: A transparent conductive film which is an indium zinc oxide film comprising In2O3 crystals, and has an X-ray diffraction peak using a Cuk? ray that appears within at least one area selected from areas ranging from 2?=35.5° to 37.0°, 39.0° to 40.5° and 66.5° to 67.8°, wherein the peak intensities of peaks that appear within areas ranging from 2?=30.2° to 30.8° and 54.0° to 57.0° are 20% or less of the peak intensity of the main peak.
    Type: Grant
    Filed: June 23, 2010
    Date of Patent: October 29, 2013
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Masahito Matsubara, Masashi Ohyama
  • Patent number: 8569192
    Abstract: A sintered complex oxide comprising metal oxide particles (a) having a hexagonal lamellar structure and containing zinc oxide and indium, and metal oxide particles (b) having a spinel structure and containing a metal element M (where M is aluminum and/or gallium), wherein the mean value of the long diameter of the metal oxide particles (a) is no greater than 10 ?m, and at least 20% of the metal oxide particles (a) have an aspect ratio (long diameter/short diameter) of 2 or greater, based on the number of particles.
    Type: Grant
    Filed: July 14, 2009
    Date of Patent: October 29, 2013
    Assignee: Tosoh Corporation
    Inventors: Hideto Kuramochi, Kenji Omi, Masanori Ichida, Hitoshi Iigusa
  • Publication number: 20130277669
    Abstract: The present invention provides: a method of preparing a coating ink for forming a zinc oxide electron transport layer, comprising mixing zinc acetate and a wetting agent in water or methanol; a coating ink comprising zinc acetate and a wetting agent in aqueous solution or methanolic solution; a method of preparing a zinc oxide electron transporting layer, which method comprises: i) coating a substrate with the coating ink of the present invention to form a film; ii) drying the film; and iii) heating the dry film to convert the zinc acetate substantially to ZnO; a method of preparing an organic photovoltaic device or an organic LED having a zinc oxide electron transport layer, the method comprising, in this order: a) providing a substrate bearing a first electrode layer; b) forming an electron transport layer according to the following method: i) coating a coating ink comprising an ink according to the present invention to form a film; ii) drying the film; iii) heating the dry film such that the zinc acetate i
    Type: Application
    Filed: September 27, 2011
    Publication date: October 24, 2013
    Applicant: The Technical University of Denmark
    Inventors: Frederik Christian Krebs, Roar Søndergard, Kion Norrman, Mikkel Jorgensen
  • Patent number: 8562872
    Abstract: A paste for solar cell electrodes and a solar cell using the same, the paste including a conductive powder; glass frit; an organic vehicle; and metal oxide particles, the metal oxide particles having a nanometer scale particle size distribution having an average particle diameter (D50) of about 15 nm to about 50 nm and a micron scale particle size distribution having an average particle diameter (D50) of about 0.1 ?m to about 2 ?m.
    Type: Grant
    Filed: February 28, 2011
    Date of Patent: October 22, 2013
    Assignee: Cheil Industries, Inc.
    Inventors: Seok Hyun Jung, Jung Chul Lee, Jae Hwan Oh, Jae Ho Kim
  • Publication number: 20130248781
    Abstract: The present invention relates to semiconducting pigments based on flake-form substrates which have a doped tin dioxide layer on the surface and to the use of the pigments in paints, coatings, printing inks, plastics, security applications, floorcoverings, films, formulations, ceramic materials, glasses, paper, for laser marking, in thermal protection, in dry preparations, in pigment preparations and in particular as varistor pigment.
    Type: Application
    Filed: November 2, 2011
    Publication date: September 26, 2013
    Applicant: MERCK PATENT GmbH
    Inventors: Reinhold Rueger, Matthias Kuntz
  • Publication number: 20130244092
    Abstract: According to one embodiment, an electrode material for a battery includes a tungsten oxide powder or a tungsten oxide composite powder provided with a coating unit containing at least one selected from a metal oxide, silicon oxide, a metal nitride, and silicon nitride.
    Type: Application
    Filed: March 11, 2013
    Publication date: September 19, 2013
    Applicants: Toshiba Materials Co., Ltd., Kabushiki Kaisha Toshiba
    Inventors: Yoko TOKUNO, Tomomichi NAKA, Naoaki SAKURAI, Akito SASAKI, Shuzi HAYASE
  • Patent number: 8535575
    Abstract: A current-voltage non-linear resistor (10) comprises a sintered body (20) of a mixture whose chief constituent is zinc oxide and including as auxiliary constituents at least bismuth (Bi), antimony (Sb), manganese (Mn), cobalt (Co) and nickel (Ni). Also, the average grain size of the mixture is no more than 0.4 ?m; and the average grain size of the zinc oxide grains in the sintered body (20) is no more than 7.5 ?m and the standard deviation based on the grain size distribution of zinc oxide grains in the sintered body (20) is no more than 15% of the average grain size of the zinc oxide grains.
    Type: Grant
    Filed: December 3, 2009
    Date of Patent: September 17, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yasunori Kasuga, Hideyasu Ando
  • Patent number: 8529802
    Abstract: Disclosed is a solution composition for forming a thin film transistor including a zinc-containing compound, an indium-containing compound, and a compound including at least one metal or metalloid selected from the group consisting of hafnium (Hf), magnesium (Mg), tantalum (Ta), cerium (Ce), lanthanum (La), silicon (Si), germanium (Ge), vanadium (V), niobium (Nb), and yttrium (Y). A method of forming a thin film by using the solution composition, and a method of manufacturing thin film transistor including the thin film are also disclosed.
    Type: Grant
    Filed: February 12, 2010
    Date of Patent: September 10, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong-Baek Seon, Sang-Yoon Lee, Jeong-il Park, Myung-Kwan Ryu, Kyung-Bae Park
  • Publication number: 20130224628
    Abstract: A functional layer material for a solid oxide fuel cell (SOFC) including a ceria ceramic oxide and a metal oxide including a metal, except for zirconium, having a Vegard's slope X represented by Equation 1 and having an absolute value |X| of the Vegard's slope X, wherein 27×105?|X|?45×105: X=(0.0220ri+0.00015zi) ??(1), wherein ri is an ionic radius difference between the metal and Ce4+, and zi is a charge difference between the metal and Ce4+.
    Type: Application
    Filed: January 30, 2013
    Publication date: August 29, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Samsung Electronics Co., Ltd.
  • Publication number: 20130200314
    Abstract: Provided is a zinc oxide sintered compact tablet enabling a transparent conductive film having no pinholes defects to be stably obtained during vacuum deposition film formation by suppressing the occurrence of the splashing phenomenon. A zinc oxide sintered compact tablet having hexagonal crystal structure, wherein when the integrated intensity of surface (103) and surface (110) found through X-ray diffraction analysis using CuK? radiation is taken to be I(103) and I(110) respectively, the orientation of the uniaxially pressed surface that is expressed by I(103)/(I(103)+I(110)) is 0.48 or more is obtained by performing pressurized formation of a granulated powder composed of a zinc oxide powder or a powder mixture of zinc oxide and an added element as a dopant and having a percentage of donut shaped secondary particles of 50% or more, sintering at normal pressure and a temperature of 800° C. to 1300° C.
    Type: Application
    Filed: May 18, 2011
    Publication date: August 8, 2013
    Applicant: SUMITOMO METAL MINING CO., LTD.
    Inventor: Kentaro Sogabe
  • Publication number: 20130181175
    Abstract: The present invention discloses a low-temperature co-precipitation method for fabricating TCO powders, which comprises steps: respectively dissolving two or more metals/metal salts in solvents to obtain metal ion solutions; mixing the metal ion solutions to form a precursor solution having a specified composition; enabling a co-precipitation reaction at a temperature lower than 45° C. via adding precipitant in two stages, controlling the temperature of precipitation reactions and undertaking aging processes; flushing, filtering, drying and calcining the precipitates to obtain TCO powders having a specified composition and improved quality.
    Type: Application
    Filed: January 16, 2012
    Publication date: July 18, 2013
    Inventors: Hsin-Chun LU, Chen-Sung Chang, Chun-Lung Chu, Min-Hsiang Liao, Ming-Hung Liu, Mei-Ching Chiang
  • Patent number: 8475689
    Abstract: A topical composition containing galvanic particulates consisting of a first conductive material that is zinc and a second conductive material that is copper is provided.
    Type: Grant
    Filed: October 31, 2006
    Date of Patent: July 2, 2013
    Assignee: Johnson & Johnson Consumer Companies, Inc.
    Inventors: Ying Sun, Jue-Chen Liu, Jeffrey M. Wu, James E. Hauschild
  • Publication number: 20130161620
    Abstract: Provided are a composition for an oxide thin film, a preparation method of the composition, a method for forming an oxide thin film using the composition, an electronic device including the oxide thin film, and a semiconductor device including the oxide thin film. The composition for the oxide thin film includes a metal precursor and nitric acid-based stabilizer. The metal precursor includes at least one of a metal nitrate, a metal nitride, and hydrates thereof.
    Type: Application
    Filed: October 16, 2012
    Publication date: June 27, 2013
    Applicant: Industry-Academic Cooperation Foundation, Yonsei University
    Inventor: Industry-Academic Cooperation Foundation, Yons
  • Publication number: 20130140504
    Abstract: A thermoelectric material that comprises a ternary main group matrix material and nano-particles and/or nano-inclusions of a Group 2 or Group 12 metal oxide dispersed therein. A process for making the thermoelectric material that includes reacting a reduced metal precursor with an oxidized metal precursor in the presence of nanoparticles.
    Type: Application
    Filed: December 1, 2011
    Publication date: June 6, 2013
    Applicant: Toyota Motor Engin. & Manufact. N.A.(TEMA)
    Inventors: Michael Paul Rowe, Li Qin Zhou
  • Patent number: 8454860
    Abstract: ZnAlO series thermoelectric conversion materials have large thermal conductivity ? about 40 W/mK at room temperature, thus the dimensionless figure of merit ZT remains around 0.3 at 1000 deg C, which is a third of the value required in practical application. An n-type thermoelectric conversion material, comprising aluminum including zinc oxide, which is represented by a general formula: Zn1-x-yAlxGayO (wherein 0.01?x?0.04, 0.01?y?0.03, 0.9?x/y?2.0). ZT value not less than 0.6 can be realized at 1000 deg C. By co-doping Al and Ga into ZnO, the thermal conductivity ? can be significantly reduced maintaining a large electric conductivity ?, resulting in a significant improvement of the thermoelectric performance.
    Type: Grant
    Filed: February 17, 2009
    Date of Patent: June 4, 2013
    Assignee: Japan Science and Technology Agency
    Inventors: Michitaka Ohtaki, Kazuhiko Araki
  • Publication number: 20130101807
    Abstract: A sputtering target including indium, tin, zinc and oxygen, and including a hexagonal layered compound, a spinel structure compound and a bixbyite structure compound.
    Type: Application
    Filed: December 12, 2012
    Publication date: April 25, 2013
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventor: Idemitsu Kosan Co., Ltd.
  • Patent number: 8419980
    Abstract: A thermoelectric material that comprises a ternary main group matrix material and nano-particles and/or nano-inclusions of a Group 2 or Group 12 metal oxide dispersed therein. A process for making the thermoelectric material that includes reacting a reduced metal precursor with an oxidized metal precursor in the presence of nanoparticles.
    Type: Grant
    Filed: April 26, 2011
    Date of Patent: April 16, 2013
    Assignee: Toyota Motor Engineering and Manufacturing North America
    Inventors: Michael Paul Rowe, Li Qin Zhou
  • Publication number: 20130082219
    Abstract: A method for forming a transparent conducting oxide product layer. The method includes use of precursors, such as tetrakis-(dimethylamino) tin and trimethyl indium, and selected use of dopants, such as SnO and ZnO for obtaining desired optical, electrical and structural properties for a highly conformal layer coating on a substrate. Ozone was also input as a reactive gas which enabled rapid production of the desired product layer.
    Type: Application
    Filed: September 30, 2011
    Publication date: April 4, 2013
    Inventors: Jeffrey W. Elam, Anil U. Mane
  • Patent number: 8409477
    Abstract: A ZnO vapor deposition material for formation of a transparent conductive film or the like consists mainly of a porous ZnO sintered body containing one or more first additive elements selected from Ce, La, Y, Pr, Nd, Pm, and Sm, and second additive elements selected from Al, Ga, Sc, and B. The content of the first additive elements is higher than the content of the second additive elements. The content of the first additive elements is in a range of 0.1 to 14.9% by mass, and the content of the second additive elements is in a range of 0.1 to 10% by mass. The sintered body has a porosity of 3 to 50%.
    Type: Grant
    Filed: January 27, 2012
    Date of Patent: April 2, 2013
    Assignee: Mitsubishi Materials Corporation
    Inventor: Yoshitaka Mayuzumi
  • Patent number: RE44853
    Abstract: Buffer compositions comprising semiconductive oxide particles and at least one of (a) a fluorinated acid polymer and (b) a semiconductive polymer doped with a fluorinated acid polymer are provided. Semiconductive oxide particles include metal oxides and bimetallic oxides. Acid polymers are derived from monomers or comonomers of polyolefins, polyacrylates, polymethacrylates, polyimides, polyamides, polyaramides, polyacrylamides, polystrenes. The polymer backbone, side chains, pendant groups or combinations thereof may be fluorinated or highly fluorinated. Semiconductive polymers include polymers or copolymers derived from thiophenes, pyrroles, anilines, and polycyclic heteroaromatics. Methods for preparing buffer compositions are also provided.
    Type: Grant
    Filed: April 18, 2012
    Date of Patent: April 22, 2014
    Assignee: E I du Pont de Nemours and Company
    Inventors: Che-Hsiung Hsu, Hjalti Skulason, Mark Martello