Abstract: A ceramic electronic device includes an element body and an external electrode. The element body includes a ceramic layer and an internal electrode layer. The external electrode is formed on an end surface of the element body and electrically connected to a part of the internal electrode layer. The ceramic layer includes a perovskite compound represented by ABO3 as a main component. The external electrode includes a baked electrode layer having a first region and a second region. The first region is contacted with the end surface of the element body and located near a joint boundary with the element body. The second region is located outside the first region and constitutes an outer surface of the baked electrode layer. The first region includes a glass frit including at least B, Zn, and Si. The second region includes an oxide having a higher melting point than Cu.

Abstract: A ceramic electronic device includes an element body and an external electrode. The element body includes a ceramic layer and an internal electrode layer. The external electrode is formed on an end surface of the element body and electrically connected to a part of the internal electrode layer. The ceramic layer includes a perovskite compound represented by ABO3 as a main component. The external electrode includes a conductor and a glass frit diffused in the conductor. The glass frit includes B, Si, Ba, and Zn. A boundary layer is present at an end of the ceramic layer in contact with the external electrode on the end surface of the element body and comprises an oxide including Ba, Zn, and Si.

Abstract: A multilayer ceramic capacitor includes a glass component of an underlying electrode layer including Zr and Ba, and in a cross-section of the multilayer ceramic capacitor, a Zr/Ba atomic number ratio is not less than about 0.03 and not greater than about 0.15. The underlying electrode layer has a glass-occupied area ratio of not less than about 18% in the cross-section of the multilayer ceramic capacitor. In a SEM image in the cross-section of the multilayer ceramic capacitor, the glass component on an imaginary line ?, which is parallel or substantially parallel to the surface of the surface layer of the underlying electrode layer about 3 ?m inside of the surface layer of the underlying electrode layer, is not greater than about 0.92 ?m.

Abstract: An electrochemically active material is represented by general formula (I): SiuSnvM1wM2x[P0.2O0.8]y·Az(I) where u, v, w, x, y, and z represent atomic % values and u+v+w+x+y+z=100, M1 includes a metal element or combinations of metal elements selected from Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zr, B, carbon, or alloys thereof, M2 includes a metal element or combinations of metal elements selected from Mg, Al, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Zr, or alloys thereof, A is an inactive phase other than a phosphate or silicide, and 0<u<90, 0?v<20, 0<w<50, 0<x<20, 0<y<20, and 0?z<50.

Abstract: A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may consist of a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.

Abstract: A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate to an aqua regia solution, followed by an exposure to a solution having hydrochloric acid and hydrogen peroxide. The SC2 solution can further react with remaining platinum residues, rendering it more soluble in an aqueous solution and thereby dissolving it from the surface of the substrate.

Abstract: A thin film transistor includes a gate electrode; a gate insulating film which contacts the gate electrode; an oxide semiconductor layer which includes a first region represented by In(a)Ga(b)Zn(c)O(d), wherein 0<a?37/60, 3a/7?3/14?b?91a/74?17/40, b>0, 0<c?3/5, a+b+c=1, and d>0, and a second region represented by In(p)Ga(q)Zn(r)O(s), wherein q/(p+q)>0.250, p>0, q>0, r>0, and s>0, and located farther than the first region with respect to the gate electrode and which is arranged facing the gate electrode with the gate insulating film provided therebetween. A source electrode and a drain electrode are arranged so as to be apart from each other and are capable of being electrically conducted through the oxide semiconductor layer.

Abstract: The paste composition for forming a back electrode of solar cell 10 provided by the present invention contains, as solids, an aluminum powder, a glass powder and a composite powder composed of a particulate composite of a metal oxide with a silicon-containing organic or inorganic compound. This composite powder is contained in an amount of at least 0.01 mass % but less than 0.45 mass % given 100 mass % as the total of the composite powder, the aluminum powder and the glass powder.

Abstract: A negative electrode active material for an electric device, including an alloy having a composition formula SixZnyAlz, where x++y=100 , 26?x?47, 18?y?44, and 22?z?46 are satisfied.

Abstract: A printed energy storage device includes a first electrode, a second electrode, and a separator between the first and the second electrode. At least one of the first electrode, the second electrode, and the separator includes frustules, for example of diatoms. The frustules may have a uniform or substantially uniform property or attribute such as shape, dimension, and/or porosity. A property or attribute of the frustules can also be modified by applying or forming a surface modifying structure and/or material to a surface of the frustules. A membrane for an energy storage device includes frustules. An ink for a printed film includes frustules.

Abstract: The present invention relates to semiconducting pigments based on flake-form substrates which have a doped tin dioxide layer on the surface and to the use of the pigments in paints, coatings, printing inks, plastics, security applications, floorcoverings, films, formulations, ceramic materials, glasses, paper, for laser marking, in thermal protection, in dry preparations, in pigment preparations and in particular as varistor pigment.

Abstract: An electrically conductive film is provided, which comprises a film formed of zinc oxide adulterated with alumina, silicon dioxide and magnesia. The transparence of the zinc oxide film is increased by means of magnesium ion in the adulterated magnesia widening the transparent window of the zinc oxide film, the conductivity is increased and thus the resistivity is reduced by means of adulterating with alumina and silicon dioxide, and the resistivity during working is stabilized by means of adulterating with alumina, silicon dioxide and magnesia. A method for manufacturing the electrically conductive film and an application therefor are also provided. The method has simple process, mild conditions, low cost and high productivity, which is suit for industrialized produce.

Abstract: Disclosed is a solution composition for forming a thin film transistor including a zinc-containing compound, an indium-containing compound, and a compound including at least one metal or metalloid selected from the group consisting of hafnium (Hf), magnesium (Mg), tantalum (Ta), cerium (Ce), lanthanum (La), silicon (Si), germanium (Ge), vanadium (V), niobium (Nb), and yttrium (Y). A method of forming a thin film by using the solution composition, and a method of manufacturing thin film transistor including the thin film are also disclosed.

Abstract: The invention provides a process for producing a transparent conducting film, which film comprises a doped zinc oxide wherein the dopant comprises Si, which process comprises: disposing a composition which is a liquid composition or a gel composition onto a substrate, wherein the composition comprises Zn and Si; and heating said substrate. The invention further provides transparent conducting films obtainable by the process of the invention, including transparent conducting films which comprise a doped zinc oxide wherein the dopant comprises Si, and wherein the film covers a surface area equal to or greater than 0.01 m2. The invention also provides a coated substrate, which substrate comprises a surface, which surface is coated with a transparent conducting film, wherein the film comprises a doped zinc oxide wherein the dopant comprises Si, and wherein the area of said surface which is coated with said film is equal to or greater than 0.01 m2.

Abstract: A negative electrode material, a method for producing this material, and to a negative electrode and a lithium-ion battery comprising this material are described. The material comprises an active phase consisting of a material M based on Al, Si, Sn, Sb or a mixture thereof, and a support phase consisting of a material XaYbOc, where: O is an oxygen; Y is a cation with oxidation degree m=3, 4, 5 or 6; X is a cation with oxidation degree d=1, 2, 3, 4 or 5, X ensuring the electroneutrality of XaYbOc; and where: c is such that 2?c?10; b is such that 1?b?4; and a=(2c?bm)/d. An interface of mixed composition exists between the XaYbOc material and the active phase M, the interface consisting of the elements M, X, Y and O.

Abstract: A powder mixture to be made into an evaporation source material for use in ion plating, and an evaporation source material useful for ion plating and a method of producing it, and a gas barrier sheet and a method of producing it. The powder mixture comprises 100 parts by weight of silicon oxide powder and 5 to 100 parts by weight of a conductive material powder. Preferably, both the silicon oxide powder and the conductive material powder have a mean particle diameter of 5 ?m or less. The conductive material powder is preferably a powder of at least one material selected from metals and electrically conductive metallic oxides, nitrides and acid nitrides. The evaporation source material for use in ion plating is in the form of agglomerates having a mean particle diameter of 2 mm or more, or a block, obtained by granulating or compression-molding the powder mixture.

Abstract: The invention relates to conductive pastes including one or more acids, or acid-forming components for silicon semiconductor devices and photovoltaic cells.

Abstract: The invention relates to glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells.

Abstract: The invention relates to glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells.

Abstract: The present invention relates to optically variable pigments of high electrical conductivity which comprise a flake-form substrate, which essentially consists of silicon dioxide and/or silicon oxide hydrate, and an electrically conductive layer surrounding the substrate, to a process for the preparation thereof, and to the use of pigments of this type.

Abstract: A variable impedance composition according to one aspect of the present invention comprises a high electro-magnetic permeability powder in an amount from 10% to 85% of the weight of the variable impedance composition, and an insulation adhesive in an amount from 10% to 30% of the weight of the variable impedance composition. The incorporation of high electro-magnetic permeability powder including carbonyl metal, such as carbonyl iron or carbonyl nickel, in the variable impedance composition can not only suppress the overstress voltage, but also dampen the transient current. In contrast to the conventional electrostatic discharge (ESD) device, the relatively high electro-magnetic permeability carbonyl metal powder can reduce arcing as well as lower the trigger voltage of the device. The high electro-magnetic permeability characteristics can also absorb the undesirable electro-magnetic radiation that causes corruption of signal and loss of data.

Abstract: Disclosed is a negative active material for a rechargeable lithium battery comprising a Si phase, a SiM phase and at least one of a X phase and a SiX phase, wherein each of phases has a crystal grain size of 100 nm and 500 nm. The element M is at least one selected from the group consisting of Ni, Co, B, Cr, Cu, Fe, Mn, Ti, and Y, the element X is at least one selected from the group consisting of Ag, Cu, and Au. However, where M is Cu, X is not Cu.

Abstract: A process according to the present invention comprises combining in a reaction mixture at least one metal alkyl compound of formula MRx with at least one silanol compound of formula; forming a film from the reaction mixture; and treating the film with heat and moisture; wherein an amount of the at least one silanol compound present ranges from about one quarter to about three quarters of an amount required to replace all alkyl groups of the at least one metal alkyl compounds with groups derived from the at least one silanol compound; M is, independently at each occurrence, Zn, Cd, Al, Ga, In, Tl, Hg, Pb, Bi or a combination thereof; x is, independently at each occurrence, an integer equal to 2 or 3; z is 0, 1 or 2; R is, independently at each occurrence, alkyl; and R1-R5 is independently H, alkyl, or hydroxyl.

Abstract: A composition for forming a ferroelectric thin film includes: a PZT sol-gel solution including at least one of: a whole or partial hydrolysate of a lead precursor and a whole or partial hydrolyzed and polycondensated product thereof; a whole or partial hydrolysate of a zirconium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a zirconium complex having at least one hydroxy ion and at least one non-hydrolyzable ligand; and a whole or partial hydrolysate of a titanium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a titanium complex having at least one hydroxyl ion and at least one non-hydrolyzable ligand; and a Bi2SiO5 sol-gel solution including at least one of: a whole or partial hydrolysate of a silicon precursor and a whole or partial hydrolyzed and polycondensated product thereof, and a resultant obtained by refluxing triphenyl bismuth as a bismuth precursor.

Abstract: In manufacturing a ceramic multi-layer wiring substrate which is formed by stacking a plurality of ceramic layers and which includes an internal wiring, a ceramic paste is printed using a screen printing process on a part of a ceramic green sheet to be a ceramic layer having the internal wiring formed thereon which part does not include the internal wiring, to form between the ceramic layers a ceramic filling layer including a same ceramic component as that in the ceramic layers which ceramic filling layer is not formed on the internal wiring. The ceramic paste includes a ceramic component, an acrylic resin, and a cellulose resin, and loss factor tan ? of the paste represented by (loss modulus)/(storage modulus) in a dry condition after printing is equal to or greater than loss factor tan ? of a conductor paste layer to be the internal wiring in a dry condition.

Abstract: Thick film conductive copper pastes that are lead-free and cadmium-free. The inventive copper pastes possess desirable characteristics, including good solderability, good wire bondability, a low firing temperature, and a wide temperature processing window, and provide excellent adhesion to a variety of substrates, including alumina and glass coated stainless steel substrates, as well as low resistivity, and a microstructure after firing that is dense and substantially free of pores.

Abstract: A composition for forming a ferroelectric thin film includes: a PZT sol-gel solution including at least one of: a whole or partial hydrolysate of a lead precursor and a whole or partial hydrolyzed and polycondensated product thereof; a whole or partial hydrolysate of a zirconium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a zirconium complex having at least one hydroxy ion and at least one non-hydrolyzable ligand; and a whole or partial hydrolysate of a titanium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a titanium complex having at least one hydroxyl ion and at least one non-hydrolyzable ligand; and a Bi2SiO5 sol-gel solution including at least one of: a whole or partial hydrolysate of a silicon precursor and a whole or partial hydrolyzed and polycondensated product thereof, and a resultant obtained by refluxing triphenyl bismuth as a bismuth precursor.

Abstract: A substrate with a transparent conductive oxide film (especially a substrate with a transparent conductive oxide film useful as a substrate for a thin-film silicon-based solar cell) being excellent in mass production efficiency and being characterized by having a low resistance, a high transparency and a good light scattering performance over a full wavelength region (300 nm to 3 ?m) of solar ray, a process for its production, and a photoelectric conversion element (especially, solar cell) employing the substrate, are presented. A substrate with a transparent conductive oxide film, comprising a substrate and a transparent conductive oxide layer formed on the substrate and constituted by a plurality of ridges is and a plurality of flat portions, wherein the surfaces of the ridges and the flat portions, have many continuous micron-size protrusions.

Abstract: The present invention relates generally to conductive, silicone-based compositions, with improved initial adhesion and reduced micro-voiding. More specifically, the present invention relates to a conductive, silicone-based composition, which includes a polyorganosiloxane, a silicone resin, and a conductive filler component.

Abstract: A glass containing no lead and comprising, calculated as oxides: 40-60 wt. % ZnO, 15-35 wt. % B2O3, 1-16 wt. % SiO2, 1-10 wt. % Al2O3, 2-15 wt. % MnO2, and at least one selected from the group consisting of Li2O, Na2O and K2O in their total of 0.5-10 wt. %, and a glass with the above-described components where a total of at least one selected from the group consisting of Li2O, Na2O and K2O is 0-5 wt. %, and at least one selected from the group consisting of MgO, CaO, TiO2, Cr2O3, ZrO2, Ta2O5, SnO2, and Fe2O3 is further included in their total of 0.1-5 wt. %. A conductive paste using such a glass as an inorganic binder has a superior binder removal ability and a good sinterability and can form dense conductors with excellent characteristics with respect to resistance to plating solutions, adhesive strength, resistance to thermal shocks, etc.

Abstract: A material usable for the electrodes and the dielectric layer plasma display panels and capable of reducing the occurrence of yellowing and a high-image-quality plasma display panel using the material are provided. Using glass powder containing 25 to 50 wt % of Bi2O3, 5 to 35 wt % of B2O3, 10 to 20 wt % of ZnO, 5 to 20 wt % of BaO, 0 to 15 wt % of SiO2 and 0 to 10 wt % of Al2O3, the electrodes and the dielectric layer of a plasma display panel are formed.

Abstract: Materials, both glass and glass-ceramic, that exhibit UV-induced changes in light transmission and electrical conductivity behavior. The materials consist essentially, in mole %, of 20-40% SiO2, 10-20% AlO1.5, 35-55% SiO2+AlO1.5, at least 30% CdF2, 0-20% PbF2, and/or ZnF2, 0-15% rare earth metal fluoride, and 45-65% total metal fluorides.

Abstract: An electrode composition that includes a plurality of composite particles and a plurality of electrically conductive diluent particles admixed with the composite particles. Each of the composite particles includes an electrochemically active metal particle and an electrically conductive layer partially covering the particle. In one aspect, the layer is present in an amount no greater than about 75 wt. % of the composite, while in another aspect the layer is present in an amount no greater than about 75 vol. % of the composite. Also featured are lithium ion batteries featuring electrodes made from these compositions.

Abstract: A glass containing no lead and comprising, calculated as oxides: 40-60 wt. % ZnO, 15-35 wt. % B2O3, 1-16 wt. % SiO2, 1-10 wt. % Al2O3, 2-15 wt. % MnO2, and at least one selected from the group consisting of Li2O, Na2O and K2O in their total of 0.5-10 wt. %, and a glass with the above-described components where a total of at least one selected from the group consisting of Li2O, Na2O and K2O is 0-5 wt. %, and at least one selected from the group consisting of MgO, CaO, TiO2, Cr2O3, ZrO2, Ta2O5, SnO2, and Fe2O3 is further included in their total of 0.1-5 wt. %. A conductive paste using such a glass as an inorganic binder has a superior binder removal ability and a good sinterability and can form dense conductors with excellent characteristics with respect to resistance to plating solutions, adhesive strength, resistance to thermal shocks, etc.

Abstract: A semiconductive ceramic contains a compound of MgO and SiO2 as a main component, and an iron oxide such as FeO, Fe2O3, and Fe3O4 as an electric conductivity provider. According to necessity, the semiconductive ceramic further contains at least one of zinc oxide, niobium oxide, and chromium oxide as an electric conductivity provider. The semiconductive ceramic has a desired electric conductivity and a mechanical strength required for structural material, thus being usable in various applications.