Abstract: A negative electrode active material for an electricity storage device comprises at least SnO as a composition thereof. When a binding energy value of an electron on a Sn 3d5/2 orbital of a Sn atom in the negative electrode active material for an electricity storage device is defined as Pl and a binding energy value of an electron on a Sn 3d5/2 orbital of a metal Sn is defined as Pm, (Pl?Pm) is 0.01 to 3.5 eV.

Abstract: The solder composition comprises particles of a thermodynamically metastable alloy. One of the elements of the alloy will form an intermetallic compound with a metal surface. The solder composition is particularly suitable for use in bumping of semiconductor devices.

Abstract: This invention provides a dielectric composition comprising a dielectric which is fireable in air at a temperature in the range of about 450° C. to about 550° C. and a conductive oxide selected from the group consisting of antimony-doped tin oxide, tin-doped indium oxide, a transition metal oxide which has mixed valence states or will form mixed valence states after firing in a nitrogen atmosphere at a temperature in the range of about 450° C. to about 550° C. and normally conducting precious metal oxides such as ruthenium dioxide, wherein the amount of conductive oxide present is from about 0.25 wt % to about 25 wt % of the total weight of dielectric and conductive oxide. This dielectric composition has reduced electrical resistance and is useful in electron field emission devices to eliminate charging of the dielectric in the vicinity of the electron emitter and the effect of static charge induced field emission.

Abstract: A method of making nanostructured alloy particles includes milling a millbase in a pebble mill containing milling media. The millbase comprises: (i) silicon, and (ii) at least one of carbon or a transition metal, and wherein the nanostructured alloy particles are substantially free of crystalline domains greater than 50 nanometers in size. A method of making a negative electrode composition for a lithium ion battery including the nanostructured alloy particles is also disclosed.

Abstract: Provided is an amorphous film substantially comprised of indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen. The film can be further crystallized by annealing at a temperature of 260° C. or lower in which resistivity of the film will be 0.4 m?cm or less. An ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film is characterized in that it will crystallize by annealing at a temperature of 260° C. or less, which is not such a high temperature, and have low resistivity after being crystallized. Thus, the present invention aims to provide a method of producing such a film and a sintered compact for producing such a film.

Abstract: A material composition having a core-shell microstructure suitable for manufacturing a varistor having outstanding electrical properties, the core-shell microstructure of the material composition at least comprising a cored-structure made of a conductive or semi-conductive material and a shelled-structure made from a glass material to wrap the cored-structure, and electrical properties of the varistors during low temperature of sintering process can be decided and designated by precisely controlling the size of the grain of the cored-structure and the thickness and insulation resistance of the insulating layer of the shelled-structure of material composition.

Abstract: Disclosed herein are sol-gel compositions for fabricating conductive fibers in an electrospinning process and methods for producing the same.

Abstract: Powder milling techniques, tin-based alloys formed thereby, and the use of such alloys as electrode compositions for lithium ion batteries are provided. The alloys include tin and at least one transition metal but contain no silicon. The powder milling is done using low energy roller milling (pebble milling).

Abstract: Provided is an amorphous film comprised substantially of indium, tin, magnesium and oxygen, and containing tin at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Mg) and magnesium at a ratio of 0.1 to 2.0% based on an atomicity ratio of Mg/(In+Sn+Mg) with remnant being indium and oxygen, and having a film resistivity of 0.4 m?cm or less as a result of crystallizing the film by annealing the film at a temperature of 260° C. or lower. An amorphous ITO thin film for use as a display electrode and the like in flat panel displays is obtained by way of sputter deposition without heating the substrate and without the need of adding water during the deposition. This amorphous ITO film has the property of being crystallized by annealing at 260° C. or lower, which is not such a high temperature, and having low resistivity after crystallization. Also provided are a method of producing the film and a sintered compact for producing the film.

Abstract: Composite compounds of tin and lithium, silicon and lithium, or tin, silicon, and lithium having tin and silicon nano-dispersed in a lithium-containing matrix may be used as electrode materials and particularly anode materials for use with rechargeable batteries. Methods of making the composite compounds include the oxidation of alloys, the reaction of stabilized lithium metal powder with tin and silicon oxides, and the reaction of inorganic salts of lithium with tin and silicon containing compounds.

Abstract: The present invention relates to a material for making a transparent conductive film, and a transparent conductive film. The material for making the transparent conductive film is composed of a mixed metal oxide comprising Zn, Sn, O, and at least one doping element selected from the group consisting of Sc, Bi, Cu, Y, La, Ag, and Au.

Abstract: An object of the present invention is to provide a paste for an electron emission source, which can retain good electric contact between CNT and a cathode electrode, by containing an electrically conductive particle having a particle diameter within the optimal range. A paste for an electron emission source containing a carbon nanotube having a diameter of 1 nm or more and less than 10 nm, and an electrically conductive part having an average particle diameter of 0.1 to 1 ?m.

Abstract: The tin-doped indium oxide thin film in accordance with the present invention has a tin-doped indium oxide, yttrium ions and europium ions, wherein the yttrium ions are proportional to 0.1-10 mol % of the tin-doped indium oxide while the europium ions proportional to 0.05-5 mol % of the tin-doped indium oxide. The method in accordance with the present invention comprises preparing a tin-doped indium oxide; and doping yttrium ions proportional to 0.1-10 mol % of the tin-doped indium and europium ions proportional to 0.05-5 mol % of the tin-doped indium oxide in the tin-doped indium oxide using a film-manufacturing method.

Abstract: In an electric contact material of silver matrix capable of resisting arc erosion and containing no cadmium-composite, an Ag—(SnO2+In2O3) composite containing 9˜11% of (SnO2+In2O3) or an Ag—Cu oxide, composite containing 15˜25% of Cu oxide is used. The electrical contact material has a contact resistance of 5˜60 milliohms (mohm) and an arc erosion resistance capability up to 2*103˜10*103 times provided that the Vickers hardness (Hv) of the material is 100˜150, the measured current is 1˜5 amperes, and the measured voltage is 10˜20 volts. Two electrical contacts maintain an arc erosion resisting capability at the condition of a low contact resistance when the electrical contact material is formed on a surface of a metal substrate of an electric connector.

Abstract: Detecting electrical overstress events in electronic circuitry such as optical emitters. In one example embodiment, a laser includes an active area and a contact region in electrical communication with the active area. A portion of the contact region is configured to manifest a change in a visual attribute of the portion in response to exposure of the portion to an electrical overstress event.

Abstract: There are disclosed insulated ultrafine powder comprising electroconductive ultrafine powder which is in the form of sphere, spheroid or acicular each having a minor axis in the range of 1 to 100 nm and an insulating film applied thereto; a process for producing the same which is capable of covering the surfaces of the insulated ultrafine powder with the insulating film having a thickness in the range of 0.3 to 100 nm without causing any clearance or vacancy; and a resin composite material which uses the same. A high dielectric constant of the material is assured by adding a small amount of insulated ultrafine powder wherein an insulating film is applied to the electroconductive ultrafine powder, while maintaining the processability and moldability that are the characteristics inherent in a resin material.

Abstract: There are disclosed insulated ultrafine powder comprising electroconductive ultrafine powder which is in the form of sphere, spheroid or acicular each having a minor axis in the range of 1 to 100 nm and an insulating film applied thereto; a process for producing the same which is capable of covering the surfaces of the insulated ultrafine powder with the insulating film having a thickness in the range of 0.3 to 100 nm without causing any clearance or vacancy; and a resin composite material which uses the same. A high dielectric constant of the material is assured by adding a small amount of insulated ultrafine powder wherein an insulating film is applied to the electroconductive ultrafine powder, while maintaining the processability and moldability that are the characteristics inherent in a resin material.

Abstract: Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a solution of the same, a method for making the same from a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, imaging devices, phase change layers, and sensor devices.

Abstract: Thin films containing a transparent conducting oxide and a high permittivity material are disclosed. Exemplary thin films may exhibit increased transmission in the visible-to-near infrared (vis-NIR) spectrum without a decrease in electrical conductivity compared to the thin film without the high permittivity material. Methods for making thin films having enhanced optical properties without substantially decreased electrical quality are also disclosed.

Abstract: An anode includes an anode active material including a lithium titanium oxide, a binder, and 0 to about 2 parts by weight of a carbon-based conductive agent based on 100 parts by weight of the lithium titanium oxide.

Abstract: A method of producing thin-film transparent conducting oxide (TCO) materials and devices that incorporate the transparent conducting oxide materials are disclosed. The method described is for coating glass, polymers, foils, or electronic devices with a TCO having improved characteristics.

Abstract: A tin oxide particle having at least two diffraction peaks at 2? (deg) of 9±1° and 28±1° in XRD measurement by Cu/K? radiation. The tin oxide particle preferably shows diffraction peaks at 2? (deg) of 19±1°, 48±1°, and 59±1°. The tin oxide particle preferably has electroconductivity. The tin oxide particle is preferably produced by mixing an aqueous solution containing tin (II) and a hydroxyl-containing organic compound in a heated condition with an alkali.

Abstract: A porous anode active material including a Group 14 element oxide and a non-active material having no reactivity with lithium; a method of manufacturing the porous anode active material; an anode including the porous anode active material; and a lithium battery including the anode. The non-active material may be silica.

Abstract: A tin oxide-based electrode formed from a composition including a majority component comprising tin-oxide (SnO2), and additives comprising CuO, ZnO, and a resistivity modifying species. The total amount of CuO and ZnO is not greater than about 0.3 wt %, and the ZnO is present in an amount within a range between about 0.1 wt % and about 0.19 wt %.

Abstract: The present invention discloses an absorber composition and photovoltaic device (PV) using the composition comprising nanoparticles and/or sintered nanoparticles comprising compounds having the formula MAxMByMCz(LAaLBb)4 where MA, MB and MC comprise elements chosen from the group consisting of Fe, Co, Ni, Cu, Zn, Cd, Sn and Pb, LA and LB are chalcogens and x is between 1.5 and 2.2, y and z are independently the same or different and are between 0.5 and 1.5 and (a+b)=1. Particularly preferred synthetic routes to uniform thin films in PV devices comprising sintered nanoparticles of Cu2ZnSnSe4 and Cu2ZnSnS4 are disclosed.

Abstract: The present disclosure discloses a titanium system composite comprising a lithium titanium composite oxide and a lithium compound cladding the lithium titanium composite oxide. The present disclosure further discloses a preparation method of the titanium system composite and an electrode material for batteries or capacitors comprising a titanium system composite.

Abstract: The present invention provides highly-stable oxide semiconductors which make it possible to provide devices having an excellent stability. The oxide semiconductor according to the present invention is an amorphous oxide semiconductor including at least one of indium (In), zinc (Zn), and Tin (Sn) and at least one of an alkaline metal or an alkaline earth metal having an ionic radius greater than that of gallium (Ga), and oxygen.

Abstract: Provided are an aqueous solution composition for fluorine doped metal oxide semiconductor, a method for manufacturing a fluorine doped metal oxide semiconductor using the same, and a thin film transistor including the same. The aqueous solution composition for fluorine doped metal oxide semiconductor includes: a fluorine compound precursor made of one or two or more selected from the group consisting of a metal compound containing fluorine and an organic material containing fluorine; and an aqueous solution containing water or catalyst. The method for manufacturing a fluorine doped metal oxide semiconductor, includes: preparing an aqueous solution composition for fluorine doped metal oxide semiconductor, coating a substrate with the aqueous solution composition; and performing heat treatment on the coated substrate to form the fluorine doped metal oxide semiconductor.

Abstract: This invention relates to an optical article having antistatic and antireflection or reflective properties, comprising a substrate having at least one main surface coated with an antireflection or reflective coating, said coating comprising at least one electrically conductive layer comprising at least 30% tin oxide (SnO2) by weight relative to the total weight of the electrically conductive layer, said electrically conductive layer having been deposited by ion-assisted deposition, and said substrate having a water uptake rate equal to or greater than 0.6% by weight relative to the total weight of said substrate, the water uptake rate being measured after predrying said substrate and then storing it for 800 hours in a chamber at 50° C. under 100% relative humidity and at atmospheric pressure.

Abstract: A method for manufacturing a composite material including tin oxide particles and a fibrillar carbon material, including synthesising tin hydroxide particles obtained from a tin salt by precipitation/nucleation in a water-alcohol medium, in the presence of the fibrillar carbon material and an acid, the fibrillar carbon material being nanotubes, carbon nanofibres, or a mixture of the two. The method can be used for the production of negative electrodes for lithium-ion batteries.

Abstract: An electrode composition for a lithium ion battery having the formula SixSnqMyCz where q, x, y, and z represent atomic percent values and (a) (q+x)>2y+z; (b) q?0, (c) z?0; and (d) M is one or more metals selected from manganese, molybdenum, niobium, tungsten, tantalum, iron, copper, titanium, vanadium, chromium, nickel, cobalt, zirconium, yttrium, or a combination thereof. The Si, Sn, M, and C elements are arranged in the form of a multi-phase microstructure comprising: (a) an amorphous phase comprising silicon; (b) a nanocrystalline phase comprising a metal silicide; and (c) a phase comprising silicon carbide phase when z>0; and (d) an amorphous phase comprising Sn when q>0.

Abstract: Disclosed are an electrode active material, having a composition of SnPx (0.9?x?0.98), an electrode comprising the same, and a lithium secondary battery comprising the electrode. Also disclosed is a method for preparing an electrode active material having a composition of SnPx (0.9?x?0.98), the method comprising the steps of: preparing a mixed solution of a Sn precursor, trioctyl phosphine (TOP) and trioctyl phosphine oxide (TOPO); and heating the solution. The application of the teardrop-shaped single-crystal SnP0-94 particles as an anode active material for lithium secondary batteries can provide an anode having very excellent cycling properties because the active material has a reversible capacity, which is about two times as large as that of a carbon anode, along with a very low irreversible capacity, and it is structurally very stable against Li ion intercalation/deintercalation in a charge/discharge process, indicating little or no change in the volume thereof.

Abstract: The tin-doped indium oxide thin film in accordance with the present invention has a tin-doped indium oxide, yttrium ions and europium ions, wherein the yttrium ions are proportional to 0.1-10 mol % of the tin-doped indium oxide while the europium ions proportional to 0.05-5 mol % of the tin-doped indium oxide. The method in accordance with the present invention comprises preparing a tin-doped indium oxide; and doping yttrium ions proportional to 0.1-10 mol % of the tin-doped indium and europium ions proportional to 0.05-5 mol % of the tin-doped indium oxide in the tin-doped indium oxide using a film-manufacturing method.

Abstract: Disclosed herein are sol-gel compositions for fabricating conductive fibers in an electrospinning process and methods for producing the same.

Abstract: The present invention relates to a composite material for a negative electrode, including: a plurality of iron oxide particles; and a conductivity improver, which is selected form the group consisting of copper, cobalt, nickel, tin, antimony, bismuth, indium, silver, gold, lead, cadmium, carbon black, graphite, copper salt, cobalt salt, nickel salt, tin salt, antimony salt, bismuth salt, indium salt, silver salt, gold salt, lead salt, cadmium salt, copper hydroxide, cobalt hydroxide, nickel hydroxide, stannic hydroxide, antimony hydroxide, bismuth hydroxide, indium hydroxide, silver hydroxide, gold hydroxide, lead hydroxide, cadmium hydroxide and the combination thereof. In the case of applying the composite material for a negative electrode according to the present invention in an electrochemical device, the improved charge/discharge characteristics and high capacity can be achieved.

Abstract: The present invention relates to an electrically conductive powder which has enough transparency for the use in the field of industrial design requiring expressions by colors, in particular, an electrically conductive powder which has superior dispersibility into solvents or polymer matrixes and gives conductivity even with low PWC. The present invention provides a transparent electrically conductive powder, comprising a first powder component that comprises:(a) a platelet-like aluminum oxide as a first substrate; and (b) a coating layer containing tungsten-doped, or tungsten- and phosphorus-doped, or phosphorus-doped tin oxide wherein the coating layer coats a surface of the first substrate.

Abstract: Provided is a method for producing a transparent conductive film which is formed via a coating step, a drying step and a baking step, wherein the baking step is characterized in that the dried coating film containing the organic metal compound as the main component is baked by being heated to a baking temperature or higher, at which at least the inorganic component is crystallized, under an oxygen-containing atmosphere having a dewpoint of ?10° C. or lower, whereby an organic component contained in the dried coating film is removed therefrom by a heat decomposition, a combustion or the combination thereof to thereby form a conductive oxide microparticle layer densely filled with conductive oxide microparticles containing the metal oxide as a main component.

Abstract: Provided is a method of forming a nanocomposite solution, and a nanocomposite photovoltaic device. In the method, a metal oxide nanorod solution is prepared and a nanoparticle solution is prepared. The metal oxide nanorod solution and the nanoparticle solution are mixed to form a nanocomposite solution.

Abstract: A method of adsorbing dye to a metal oxide particle by using a supercritical fluid, and a solar cell prepared using the method.

Abstract: A catalyst for electrodes in solid-polymer fuel cells which comprises metal oxide particles themselves. The catalyst contains fine transition-metal oxide particles having, in the main phase, a perovskite structure represented by the general formula ABO3 (wherein A represents one or more elements selected among lanthanum, strontium, cerium, calcium, yttrium, erbium, praseodymium, neodymium, samarium, europium, silicon, magnesium, barium, niobium, lead, bismuth, and antimony; and B represents one or more elements selected among iron, cobalt, manganese, copper, titanium, chromium, nickel, and molybdenum), the fine oxide particles having lattice constants satisfying the following relationship (1): 1.402<2b/(a+c)<1.422??(1) wherein a and c represent the minor-axis lengths of the perovskite type crystal lattice and b represents the major-axis length thereof.

Abstract: The present invention aims to drive a PDP at low voltage by providing a material with a high secondary electron emission coefficient under a practical manufacturing condition. In order to achieve the aim, a crystalline oxide selected from the group consisting of CaSnO3, SrSnO3, BaSnO3, and a solid solution of two or more of them, in which an amount of Ca, Sr or Ba in a surface region thereof is reduced, is used as a material for a protective film when a plasma display panel is produced.

Abstract: Disclosed is a semiconductor thin film which can be formed at a relatively low temperature even on a flexible resin substrate. Since the semiconductor thin film is stable to visible light and has high device characteristics such as transistor characteristics, in the case where the semiconductor thin film is used as a switching device for driving a display, even when overlapped with a pixel part, the luminance of a display panel does not deteriorate. Specifically, a transparent semiconductor thin film 40 is produced by forming an amorphous film containing zinc oxide and indium oxide and then oxidizing the film so that the resulting film has a carrier density of 10+17 cm?3 or less, a Hall mobility of 2 cm2/V·sec or higher, and an energy band gap of 2.4 EV or more.

Abstract: The present invention is directed to electrochromic electrolyte polymer blends. These blends comprise an amorphous polymer and an electrochromophore component. The electrochromophore component comprises a polyalkylene polymer copolymerized with an electrochromic moiety. The blends can be used to make elastomeric films and coatings that can be used in laminates, which can be used to form manufactured articles such as architectural and vehicular glazing, eyewear, displays and signage.

Abstract: ITO powder and a producing method of the same, capable of producing ITO particles without using a solvent with a high boiling point by a simple treatment method without a heating process in an atmosphere which causes sintering. Also, an ITO powder is provided, which is suitable for a coating material for a transparent electroconductive material, the ITO powder being produced by a first step of dissolving salt containing indium and salt containing tin into an organic solvent, then adding to this organic solvent, an organic solvent containing a basic precipitant, to manufacture a precursor; and a second step of applying heat treatment to the precursor in a pressurizing vessel, to thereby generate ITO particles.

Abstract: An oxide sintered body substantially containing zinc, tin and oxygen; containing tin at an atomic number ratio, Sn/(Zn +Sn), of 0.23 to 0.50, and being composed mainly of a zinc oxide phase and at least one kind of zinc stannate compound phase, or being composed of at least one kind of zinc stannate compound phase; provided by a method for manufacturing the oxide sintered body by formulating an aqueous solvent to raw material powder containing powder of a zinc stannate compound, or mixed powder of tin oxide powder and zinc oxide powder, and after mixing the resulting slurry for equal to longer than 15 hours, by subjecting the slurry to solid-liquid separation, drying and granulation, and subsequently compacting by charging the granule into a mold, followed by sintering the resultant compact under sintering atmosphere at 1300 to 1500° C. for equal to or longer than 15 hours.

Abstract: A powder mixture to be made into an evaporation source material for use in ion plating, and an evaporation source material useful for ion plating and a method of producing it, and a gas barrier sheet and a method of producing it. The powder mixture comprises 100 parts by weight of silicon oxide powder and 5 to 100 parts by weight of a conductive material powder. Preferably, both the silicon oxide powder and the conductive material powder have a mean particle diameter of 5 ?m or less. The conductive material powder is preferably a powder of at least one material selected from metals and electrically conductive metallic oxides, nitrides and acid nitrides. The evaporation source material for use in ion plating is in the form of agglomerates having a mean particle diameter of 2 mm or more, or a block, obtained by granulating or compression-molding the powder mixture.

Abstract: The present disclosure relates to modifications to nanostructure based transparent conductors to achieve increased haze/light-scattering with different and tunable degrees of scattering, different materials, and different microstructures and nanostructures.

Abstract: The present invention provides a sputtering target suitable for producing an amorphous transparent conductive film which can be formed without heating a substrate and without feeding water during the sputtering; which is easily crystallized by low-temperature annealing; and which has low resistivity after the crystallization. An oxide sintered compact containing an indium oxide as a main component, while containing tin as a first additive element, and one or more elements selected from germanium, nickel, manganese, and aluminum as a second additive element, with the content of tin which is the first additive element being 2-15 atom % relative to the total content of indium and tin, and the total content of the second additive element being 0.1-2 atom % relative to the total content of indium, tin and the second additive element.

Abstract: The present invention is a transparent conductor containing electrically conductive particles, a binder, and an ultraviolet absorber. The transparent conductor of the present invention is so arranged that the ultraviolet absorber in the transparent conductor absorbs ultraviolet light even during irradiation of the transparent conductor with ultraviolet light, and is thus able to suppress influence of ultraviolet light on the electrically conductive particles.

Abstract: An electrically conductive composition and a fabrication method thereof are provided. The electrically conductive structure includes a major conductive material and an electrically conductive filler of an energy delivery character dispersed around the major conductive material. The method includes mixing a major conductive material with an electrically conductive filler of an energy delivery character to form a mixture, coating the mixture on a substrate, applying a second energy source to the mixture while simultaneously applying a first energy source for sintering the major conductive material to form an electrically conductive composition with a resistivity smaller than 10×10?3?·cm.