Abstract: A battery with a high capacity and superior cycle characteristics and an anode active material used for it are provided. An anode contains an anode active material capable of reacting with lithium. The anode active material contains tin, cobalt, and carbon, and further contains at least one from the group consisting of indium, niobium, germanium, titanium, molybdenum, aluminum, phosphorus, and bismuth. Further, in the anode active material, the carbon content is from 9.9 wt % to 29.7 wt %, and the ratio of cobalt to the total of tin and cobalt is from 30 wt % to 70 wt %. Further, coordination number of cobalt as a first neighboring atom around tin obtained by the radial structure function calculated based on one scattering theory of X-ray absorption spectroscopy is 4 or less.

Abstract: The invention relates to glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells.

Abstract: An inkjet printable electrode composition, an electrode including the electrode composition, and a secondary battery including the electrode. The inkjet printable electrode composition includes oxide, a conducting agent, a wetting agent, a binder and an aqueous solvent, in which the viscosity of the binder is in a range of 2 to 20 cps in a 1 wt % aqueous solution of the binder. The inkjet printing electrode composition includes a binder having an appropriate viscosity to allow ink to be easily ejected when the ink is inkjet-printed, and thus, a uniform, thin, and planarized pattern may be formed onto a collector by inkjet printing, without clogging of a nozzle, and thus electrode and secondary battery may be formed at low costs.

Abstract: Electrode active materials comprising two or more groups of particles having differing chemical compositions, wherein each group of particles comprises a material selected from: (a) materials of the formula A1 aM1 b(XY4)cZd; and (b) materials of the formula A2eM2fOg; and (c) materials of the formula A3hMniO4; wherein (i) A1, A2, and A3 are Li, Na, or K; (ii) M1and M3 comprise a transition metal; (iv) XY4 a phosphate or similar moiety; and (v) Z is OH, or halogen.

Abstract: The main object of the invention is to obtain LiMnPO4 having an excellent crystalline and a high purity at a lower temperature. The present invention provides a method for manufacturing LiMnPO4 including the steps of: precipitating for obtaining precipitate of manganese hydroxide (Mn(OH)x) by adding a precipitant to a Mn source solution in which a Mn source is dissolved; reducing for obtaining a reduced dispersion solution by dispersing the precipitate in a reducing solvent; adding for obtaining an added dispersion solution by adding a Li source solution and a P source solution to the reduced dispersion solution; pH adjusting for adjusting the pH of the added dispersion solution in the range of 3 to 6 to obtain a pH-adjusted dispersion solution; and synthesizing for synthesizing by reacting the pH-controlled dispersion solution by a heating under pressure condition.

Abstract: A conductive thermoplastic elastomer composition comprising a component (A) containing a thermoplastic resin or/and a thermoplastic elastomer; a component (B) comprising an ionic-conductive agent containing an ethylene oxide-propylene oxide copolymer or/and an ethylene oxide-propylene oxide-allyl glycidyl ether copolymer and a metal salt contained in the ethylene oxide-propylene oxide copolymer or/and the ethylene oxide-propylene oxide-allyl glycidyl ether copolymer; and a component (C) comprising an ethylene-acrylic ester-maleic anhydride copolymer.

Abstract: The present disclosure relates to an image forming component. The component may include a urethane body, comprising polydiene containing a residual double bond available for oxidation, and including a surface, wherein said double bond is oxidized. The component may also include a first conductive additive including an alkali metal salt, wherein the first conductive additive catalyzes the oxidation of the polydiene and a second conductive additive including an inert conductive additive that does not catalyze the polydiene oxidation, wherein the image forming component exhibits a surface resistivity in the range of 1.0×109 to 1.0×1012 ohm-cm, when characterized at 15.6° C. and 20% RH.

Abstract: A semiconductive member including an alkali metal salt having the formula (M)n·X in a surface layer thereof. M represents Na+, K+, or Li+; X represents Cl?, Br?, I?, F?, CH3COO?, CF3COO?, CH(COOH)CHCOO?, (CHCOO?)2, CH2(COOH)CH2COO?, (CH2COO?)2, (HOOC)Ar(COO?), Ar(COO?)2, (HOOC)2Ar(COO?), (HOOC)Ar(COO?)2, Ar(COO?)3, (HOOC)3Ar(COO?), (HOOC)2Ar(COO?)2, (HOOC)Ar (COO?)3, Ar(COO?)4, Ar—SO3?, Ar(SO3?)2, an oligomer or a polymer having an acrylic acid anion unit, or an oligomer or a polymer having an methacrylic acid anion unit; Ar represents a benzene ring, a naphthalene ring, or a biphenyl ring; and n is a numeral equivalent to the anionic valence of X.

Abstract: A gettered polycrystalline group III metal nitride is formed by heating a group III metal with an added getter in a nitrogen-containing gas. Most of the residual oxygen in the gettered polycrystalline nitride is chemically bound by the getter. The gettered polycrystalline group III metal nitride is useful as a raw material for ammonothermal growth of bulk group III nitride crystals.

Abstract: A method of producing a proton conducting material, comprising adding a pyrophosphate salt to a solvent to produce a dissolved pyrophosphate salt; adding an inorganic acid salt to a solvent to produce a dissolved inorganic acid salt; adding the dissolved inorganic acid salt to the dissolved pyrophosphate salt to produce a mixture; substantially evaporating the solvent from the mixture to produce a precipitate; and calcining the precipitate at a temperature of from about 400° C. to about 1200° C.

Abstract: Fullerene-capped Group IV nanoparticles, materials and devices made from the nanoparticles, and methods for making the nanoparticles are provided. The fullerene-capped Group IV nanoparticles have enhanced electron transporting properties and are well-suited for use in photovoltaic, electronics, and solid-state lighting applications.

Abstract: A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.

Abstract: Embodiments of the invention generally provide compositions of tantalum carbide nitride materials. In one embodiment, a composition of a tantalum carbide nitride material is provided which includes the chemical formula of TaCxNy, wherein x is within a range from about 0.20 to about 0.50 and y is within a range from about 0.20 to about 0.55, an interstitial/elemental carbon atomic ratio of about 2 or greater, and a crystalline structure. In some examples, the composition provides that x is within a range from about 0.25 to about 0.40, preferably, from about 0.30 to about 0.40, and y is within a range from about 0.30 to about 0.50, preferably, from about 0.35 to about 0.50. The interstitial/elemental carbon atomic ratio may be about 3, about 4, or greater. The composition further may have a sheet resistance within a range from about 1×104 ?/sq to about 1×106 ?/sq.

Abstract: Disclosed is a compound represented by the following formula 1: wherein, each of R1˜R13 independently represents —H, —F, —Cl, —Br, —I, —OH, —SH, —COOH, —PO3H2, —NH2, —NO2, —O(CH2CH2O)nH (wherein, n is an integer of 1˜5), C1˜C12 alkyl group, C1˜C12 aminoalkyl group, C1˜C12 hydroxyalkyl group, C1˜C12 haloalkyl group, C2˜C12 alkenyl group, C1˜C12 alkoxy group, C1˜C12 alkylamino group, C1˜C12 dialkylamino group, C6˜C18 aryl group, C6˜C18 aminoaryl group, C6˜C18 hydroxyaryl group, C6˜C18 haloaryl group, C7˜C18 benzyl group, C7˜C18 aminobenzyl group, C7˜C18 hydroxybenzyl group, C7˜C18 halobenzyl group, or nitrile group (—CN); and at least one of R4˜R13 is nitrile group (—CN). A non-aqueous electrolyte comprising: (i) a lithium salt, (ii) a solvent, and (iii) a compound represented by formula 1; and a secondary battery comprising the non-aqueous electrolyte are also disclosed.

Abstract: Method for the preparation of inorganic-NP-composite microgels is based on the reversible transfer of microgels between water and an organic solvent such as tetrahydrofuran (THF). The method is used to produce semiconductor nanocrystals, often referred to as quantum dots (QDs) which are well known for their unique optical, electrical, magnetic and catalytic properties, as the inorganic NPs, recognizing that the best quality QDs are synthesized by a high temperature process in organic media, and have their surface covered with hydrophobic ligands (such as trioctylphosphine oxide, TOPO) that render the NPs insoluble in an aqueous solution.

Abstract: A nanocomposite material and a method of manufacturing the same are disclosed. The nanocomposite material includes a plurality of nanoparticles coated with a metal oxide, and a matrix of the metal oxide immobilizing the nanoparticles that are dispersed therein. The nanocomposite material is manufactured such that macro- or micro-scale cracks are prevented or effectively prevented, light stability is enhanced over a light-emitting period, and light brightness is improved.

Abstract: The present invention relates to nanoparticulate hardening accelerators, to preparations prepared therefrom, in particular masterbatches comprising nanoparticles, and to the use thereof in polymer matrices, in particular surface coatings and printing inks of all types, which make extremely high demands of colour neutrality and/or transparency.

Abstract: A method for the synthesis of compounds of the formula C—LixM1?yM?y(XO4)n, where C represents carbon cross-linked with the compound LixM1?yM?y(XO4)n, in which x, y and n are numbers such as 0?x?2, 0?y?0.6, and 1?n?1.5, M is a transition metal or a mixture of transition metals from the first period of the periodic table, M? is an element with fixed valency selected among Mg2+, Ca2+, Al3+, Zn2+ or a combination of these same elements and X is chosen among S, P and Si, by bringing into equilibrium, in the required proportions, the mixture of precursors, with a gaseous atmosphere, the synthesis taking place by reaction and bringing into equilibrium, in the required proportions, the mixture of the precursors, the procedure comprising at least one pyrolysis step of the carbon source compound in such a way as to obtain a compound in which the electronic conductivity measured on a sample of powder compressed at a pressure of 3750 Kg·cm?2 is greater than 10?8 S·cm?1.

Abstract: A method of producing a proton conducting material, comprising adding a pyrophosphate salt to a solvent to produce a dissolved pyrophosphate salt; adding an inorganic acid salt to a solvent to produce a dissolved inorganic acid salt; adding the dissolved inorganic acid salt to the dissolved pyrophosphate salt to produce a mixture; substantially evaporating the solvent from the mixture to produce a precipitate; and calcining the precipitate at a temperature of from about 400° C. to about 1200° C.

Abstract: Described is a composite lithium compound having a mixed crystalline structure. Such compound was formed by heating a lithium compound and a metal compound together. The resulting mixed metal crystal exhibits superior electrical property and is a better cathode material for lithium secondary batteries.

Abstract: A method for improving the environmental stability of cathode materials used in lithium-based batteries. Most currently used cathode active materials are acutely sensitive to environmental conditions, e.g. leading to moisture and CO2 pickup, that cause problems for material handling especially during electrode preparation and to gassing during charge and discharge cycles. Binder materials used for making cathodes, such as PVDF and PTFE, are mixed with and/or coated on the cathode materials to improve the environmental sensitivity of the cathode materials.

Abstract: The main object of the invention is to obtain LiMnPO4 having an excellent crystalline and a high purity at a lower temperature. The present invention provides a method for manufacturing LiMnPO4 including the steps of: precipitating for obtaining precipitate of manganese hydroxide (Mn(OH)x) by adding a precipitant to a Mn source solution in which a Mn source is dissolved; reducing for obtaining a reduced dispersion solution by dispersing the precipitate in a reducing solvent; adding for obtaining an added dispersion solution by adding a Li source solution and a P source solution to the reduced dispersion solution; pH adjusting for adjusting the pH of the added dispersion solution in the range of 3 to 6 to obtain a pH-adjusted dispersion solution; and synthesizing for synthesizing by reacting the pH-controlled dispersion solution by a heating under pressure condition.

Abstract: Nanotechnology methods for creating stoichiometric and non-stoichiometric substances with unusual combination of properties by lattice level composition engineering are described.

Abstract: The powder of an Nb compound has a composition represented by NbxOy, NbxNz or NbxOyNz. The powder of the Nb compound has an electric conductivity which is not less than 1/10 of that of Nb. A porous sintered body used for manufacturing a solid electrolytic capacitor is formed using the powder of the Nb compound. The solid electrolytic capacitor achieves both of a reduction in size and an increase in capacitance.

Abstract: Disclosed is a method for nanostructure synthesis that includes growing nanostructures on a layered structure compound at a low temperature using a solution containing a solvent and at least one precursor. The method can include synthesizing and assembling nanowires in essentially the same method step. Disclosed nanostructures and nanowires are substantially uniform in diameter and single crystal. Nanowires can intersect to form networks and can be covalently bonded at points of intersection. Disclosed nanowire networks can be substantially uniform and can form an ordered network. Nanowire networks can be used to fabricate electronic and optical devices.

Abstract: A method of forming a bulk, free-standing cubic III-N substrate including a) growing epitaxial III-N material on a cubic III-V substrate using molecular beam epitaxy (MBE); and b) removing the III-V substrate to leave the III-N material as a bulk, free-standing cubic III-N substrate. A bulk, free-standing cubic III-N substrate for fabrication of III-N devices.

Abstract: Methods of manufacture and use of phosphates of transition metals are described as positive electrodes for secondary lithium batteries, including a process for the production of LiMPO4 with controlled size and morphology, M being FexCoyNizMnw, where 0?x?1, 0?y?1, 0?w?1, and x+y+z+w=1. According to an exemplary embodiment, a process is described for the manufacture of LiFePO4 including the steps of providing an equimolar aqueous solution of Li1+, Fe3+ and PO43?, evaporating water from the solution to produce a solid mixture, decomposing the solid mixture at a temperature of below 500° C. to form a pure homogeneous Li and Fe phosphate precursor, and annealing the precursor at a temperature of less than 800° C. in a reducing atmosphere to produce the LiFePO4 powder. The obtained powders can have a particle size of less than 1 ?m, and can provide superior electrochemical performance when mixed for an appropriate time with an electrically conductive powder.

Abstract: Oxygen can be doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases including gallium, nitrogen and oxygen to the non-C-plane gallium nitride seed crystal, growing a non-C-plane gallium nitride crystal on the non-C-plane gallium nitride seed crystal and allowing oxygen to infiltrating via a non-C-plane surface to the growing gallium nitride crystal.

Abstract: An organic-inorganic hybrid material comprising a metal oxide and a chelating ligand is synthesized. The function of a coloring property, a light-emitting property, or semiconductivity of the organic-inorganic hybrid material can be controlled by chelating ligand. The organic-inorganic hybrid material is prepared by sol-gel method using sol which includes a metal alkoxide and/or a metal salt and a functional chelating agent.

Abstract: The invention relates to a method of doping semiconductor material. Essentially, the method comprises mixing a quantity of particulate semiconductor material with an ionic salt or a preparation of ionic salts. Preferably, the particulate semiconductor material comprises nanoparticles with a size in the range 1 nm to 100 ?m. Most preferably, the particle size is in the range from 50 nm to 500 nm. Preferred semiconductor materials are intrinsic and metallurgical grade silicon. The invention extends to a printable composition comprising the doped semiconductor material as well as a binder and a solvent. The invention also extends to a semiconductor device formed from layers of the printable composition having p and n type properties.

Abstract: A composition for use in an electrochemical redox reaction is described. The composition may comprise a material represented by a general formula MyXO4 or AxMyXO4, where each of A (where present), M, and X independently represents at least one element, O represents oxygen, and each of x (where present) and y represent a number, and an oxide of at least one of various elements, wherein the material and the oxide are cocrystailine, and/or wherein a volume of a crystalline structural unit of the composition may be different than a volume of a crystalline structural unit of the material alone. An electrode comprising such a composition is also described, as is an electrochemical cell comprising such an electrode. A process of preparing a composition for use in an electrochemical redox reaction is also described.

Abstract: An indium phosphide substrate for semiconductor devices is obtained as follows. In order to have the direction of growth of the crystal in the <100> orientation, a seed crystal having a specified cross-sectional area ratio with the crystal body is placed at the lower end of a growth container. The growth container housing the seed crystal, indium phosphide raw material, dopant, and boron oxide is placed in a crystal growth chamber. The temperature is raised to at or above the melting point of indium phosphide. After melting the boron oxide, indium phosphide raw material, and dopant, the temperature of the growth container is lowered in order to obtain an indium phosphide monocrystal. An average dislocation density is a function of a carrier density and diameter of the substrate, dislocation density, and a dopant concentration on the wafer is substantially uniform in the depth direction.

Abstract: The present invention provides a molecular film by alkaline fluoride n-doping into an electron transport host. The present invention also provides a molecular film where the transport molecule can either be tris (8-hydroxyquinolinato) (Alq3) or fullerene. The present invention further provides a p-n junction and a field-effect transistor of the same materials. Furthermore, the present invention provides a molecular film by fullerene p-doping into a hole transport molecular host. The present invention further provides a P-I-N light-emitting device which includes a substrate and a first electrically conductive layer defining an anode electrode layer on the substrate. The device includes the p-doped molecular film as hole injection layer deposited on the anode, the n-doped electron transport film as electron injection layer, and a second electrically conductive layer defining a cathode electrode layer on the electron injection layer.

Abstract: A mineral slurry comprises mineral particles in an amount equal to or greater than about 60 percent by total weight of the slurry, wherein 85 percent of the mineral particles have an average particle size equal to or less than 2 micrometers; a polyelectrolyte dispersant derived from an acrylate polymer formed by reversible addition-fragmentation chain transfer polymerization, wherein the polyelectrolyte dispersant comprises endgroups comprising thio-containing residues derived from a trithiocarbonate chain transfer agent, wherein the polyelectrolyte dispersant is in an amount less than about 35 pounds of the dispersant per ton of dry mineral particles, and wherein the polyelectrolyte dispersant has a molecular weight of 3000 to 10,000 Daltons and a polydispersity of at least 1.0 and less than 1.5; and the remainder water.

Abstract: Provided herein are electroactive agglomerated particles, which comprise nanoparticles of a first electroactive material and nanoparticles of a second electroactive materials, and processes of preparation thereof.

Abstract: The present invention concerns electrode materials capable of redox reactions by electrons and alkaline ions exchange with an electrolyte. The applications are in the field of primary (batteries) or secondary electrochemical generators, super capacitors and light modulating system of the super capacitor type.

Abstract: A process of manufacturing a positive active material for a lithium secondary battery includes preparing a coating-element-containing organic suspension by adding a coating-element source to an organic solvent, adding water to the suspension to prepare a coating liquid, coating a positive active material with the coating liquid, and drying the coated positive active material.

Abstract: Disclosed is a positive active material for a rechargeable lithium battery, including a lithiated intercalation compound and an additive compound. The additive compound comprises one or more intercalation element-included oxides which have a charging voltage of 4.0 to 4.6V when 5-50% of total intercalation elements of the one or more intercalation element-included oxides are released during charging.

Abstract: An electrolyte for anodizing magnesium products, includes a base solution, a main blackening agent, an auxiliary blackening agent, and a complexing agent. The base solution includes 2 to 25 g/l of alkali, 1 to 30 g/l of fluoride, and 1 to 35 g/l of silicate. The main blackening agent mainly includes cupric salt, concentration of the cupric salt is from 0.3 to 9 grams per liter (g/l). The auxiliary blackening agent mainly includes oxysalt, concentration of the oxysalt is from 0.1 to 8 g/l. Concentration of the complexing agent is from 0.5 to 20 g/l.

Abstract: A corrosion inhibiting mixture comprising (A1) corrosion-inhibiting pigments, (A2) amorphous silica modified with metal ions, and (A3) at least one compound of the general formula I: Mn(X)m??(I) in which the variables and indices have the following meanings: M is at least one central atom selected from the group of Lewis acceptors, X stands for Lewis donor ligands having at least one bridging atom selected from elements of main groups 5 and 6 of the periodic table of the elements, n is from 1 to 500, and m is from 3 to 2000; coating materials comprising said mixture and their use as coil coating materials.

Abstract: There is provided a low dielectric constant material, which is excellent in thermal resistance, has low dielectric constant, and is applicable to a semiconductor device or electric appliances, an insulation film between semiconductor layers using the same, and the semiconductor device. The material is the low dielectric constant material having thermal resistance, which contains borazine skeletal molecules shown by the following formula (1) and the like in an inorganic or organic material molecule.

Abstract: Electrode active materials comprising two or more groups of particles having differing chemical compositions, wherein each group of particles comprises a material selected from: (a) materials of the formula A1aM1b(XY4)cZd; and (b) materials of the formula A2eM2fOg; and wherein (i) A1, A2, and A3 are Li, Na, or K; (ii) M1 and M3 comprise a transition metal; (iv) XY4 a phosphate or similar moiety; and (v) Z is OH, or halogen. In a preferred embodiment, A2eM3fOg is A3hMniO4 having an inner and an outer region, wherein the inner region comprises a cubic spinel manganese oxide, and the outer region comprises a manganese oxide enriched in Mn+4 relative to the inner region. In a preferred embodiment, the compositions also comprise a basic compound.

Abstract: Disclosed is a new vanadium oxide hydrate composition suitable for use as electrode-active material in primary and secondary lithium and lithium ion batteries and a process for its preparation.

Abstract: A process is described for depositing a copper film on a substrate surface by chemical vapor deposition of a copper precursor. The process includes treating a diffusion barrier layer surface and/or a deposited film with an adhesion-promoting agent and annealing the copper film to the substrate. Suitable adhesion-promoting agents include, e.g., organic halides, such as methylene chloride, diatomic chlorine, diatomic bromine, diatomic iodine, HCl, HBr and HI. Processes of the invention provide copper-based films, wherein a texture of the copper-based films is predominantly (111). Such films provide substrates having enhanced adhesion between the diffusion barrier layer underlying the (111) film and the copper overlying the (111) film.

Abstract: A gallium nitride phosphor of which the particles are coated with a surface-treating compound that contains at least one of P and Sb.

Abstract: An electrically conductive material that includes a phosphate glass having a chemical formula AB(PO4). Ag particles are dispersed within the phosphate glass in an amount of between about 8% to about 70% by volume. The invention includes a method for making the disclosed electrically conductive material.

Abstract: The invention relates to a process for preparing electrically conductive pigments based on F−- and/or PO43−-doped tin mixed oxides applied as an electrically conductive layer to a substrate, in which, first of all, SnO2-coated substrates are prepared by precipitation and subsequent calcining and then, in further process steps, this SnO2 layer is converted into a tin mixed oxide layer doped with F− and/or PO43−. The invention further relates to electrically conductive pigments prepared by the process of the invention, to the use of these pigments for pigmenting lacquers, printing inks, plastics systems or coatings, and to lacquers, printing inks, plastics systems or coatings pigmented with an electrically conductive pigment prepared by the process of the invention.

Abstract: The invention improves operability in forming a catalyst electrode, and improves performance of a fuel cell. A catalyst-loaded carbon is dispersed in a mixed solution of an azeotropic solvent and ion exchanged water. An electrolyte solution is added to the dispersed solution. A solvent, such as ethanol or the like, is added to adjust the viscosity and the water content of the solution, thereby providing an electrode catalyst solution. The use of the obtained solution as an ink for forming a catalyst layer through printing improves printing characteristic and drying characteristic.

Abstract: Provided is a compound semiconductor single crystal and a fabrication process for a compound semiconductor device capable of forming a prescribed pattern without requirement of many steps. A group V element component in a III-V compound semiconductor single crystal or a group VI element component in the II-VI compound semiconductor single crystal is reduced less than a composition ratio expressed by a chemical formula of a corresponding compound semiconductor single crystal in a pattern-shaped portion.

Abstract: A semiconductive ceramic contains a compound of MgO and SiO2 as a main component, and an iron oxide such as FeO, Fe2O3, and Fe3O4 as an electric conductivity provider. According to necessity, the semiconductive ceramic further contains at least one of zinc oxide, niobium oxide, and chromium oxide as an electric conductivity provider. The semiconductive ceramic has a desired electric conductivity and a mechanical strength required for structural material, thus being usable in various applications.