Abstract: An electronic device includes a circuit board, a lower IC package in which a lower IC chip is sealed on a lower package substrate by a lower resin portion being mounted on the substrate via a lower solder connection portion, and an upper IC package in which an upper IC chip is sealed on an upper package substrate by an upper resin portion being mounted on the lower IC package via an upper solder connection portion. The upper IC package is provided with a rigid body having a smaller linear expansion coefficient in a plane direction than that of the upper resin portion. The rigid body is arranged directly above a boundary between the lower IC chip and the lower resin portion.

Abstract: A method for producing a 3D semiconductor device including: providing a first level, including a single crystal layer; forming memory control circuits in and/or on the first level which include first single crystal transistors and at least two interconnection metal layers; forming at least one second level disposed above the memory control circuits; performing a first etch step into the second level; forming at least one third level on top of the second level; performing additional processing steps to form first memory cells within the second level and second memory cells within the third level, where each of the first memory cells include at least one second transistor including a metal gate, where each of the second memory cells include at least one third transistor; and performing bonding of the first level to the second level, where the bonding includes oxide to oxide bonding.

Abstract: Some embodiments of the invention provide a three-dimensional (3D) circuit that is formed by stacking two or more integrated circuit (IC) dies to at least partially overlap and to share one or more interconnect layers that distribute power, clock and/or data-bus signals. The shared interconnect layers include interconnect segments that carry power, clock and/or data-bus signals. In some embodiments, the shared interconnect layers are higher level interconnect layers (e.g., the top interconnect layer of each IC die). In some embodiments, the stacked IC dies of the 3D circuit include first and second IC dies. The first die includes a first semiconductor substrate and a first set of interconnect layers defined above the first semiconductor substrate. Similarly, the second IC die includes a second semiconductor substrate and a second set of interconnect layers defined above the second semiconductor substrate.

Abstract: Information handling system (IHS) heatsinking systems and methods may employ a thermally conductive compression attached memory module (CAMM) bolster plate affixed to one surface of a circuit board of the CAMM, between a central processing unit (CPU) of the IHS and memory devices mounted on the CAMM, to provide compression between the CAMM and a z-axis compression connector and to capture and dissipate heat from the CPU and the memory devices. Spacing between the CPU and the DIMM may enable this capture and dissipation of heat from the CPU. The bolster plate may be configured to receive at least one conductive fastener that bears on the bolster plate and presses the CAMM to the z-axis compression connector, and to conductively thermally couple the CAMM and bolster plate to a ground plane of a system printed circuit board (PCB) mounting the CPU and the CAMM.

Abstract: The present invention provides a multi-die package including main die, a memory die, a first set of pins and a second set of pins. The main die includes a memory controller, a first set of pads, a second set of pads and a third set of pads. The memory die is coupled to the first set of pads and the second set of pads of the main die. The first set of pins is coupled to the third set of pads of the main die. The second set of pins is coupled to the second set of pads of the main die. The memory controller accesses the memory die through the first set of pads and the second set of pads, and the memory controller accesses a memory chip external to the multi-die package through the second set of pads and the third set of pads.

Abstract: A back side of a diamond or other substrate is thinned using plasma etches and a mask situated away from the back side by a spacer having a thickness between 50 ?m and 250 ?m. Typically, a combined RIE/ICP etch is used to thin the substrate from 20-40 ?m to less than 1 ?m. For applications in which color centers are implanted or otherwise situated on a front side of the diamond substrate, after thinning, a soft graded etch is applied to reduce color center linewidth, particularly for nitrogen vacancy (NV) color centers.

Abstract: A method includes forming a through-via from a first conductive pad of a first device die. The first conductive pad is at a top surface of the first device die. A second device die is adhered to the top surface of the first device die. The second device die has a surface conductive feature. The second device die and the through-via are encapsulated in an encapsulating material. The encapsulating material is planarized to reveal the through-via and the surface conductive feature. Redistribution lines are formed over and electrically coupled to the through-via and the surface conductive feature.

Abstract: A semiconductor device includes a semiconductor element and a lead part. The semiconductor element is mounted on a circuit pattern provided on an insulating substrate. The lead part has a plate shape and is bonded to the semiconductor element with a first bonding material interposed therebetween. The lead part includes a lead body and a bonding component. The lead body includes an opening part provided corresponding to a mounting position of the semiconductor element. The bonding component is provided in the opening part and on the semiconductor element. The bonding component is bonded at a lower surface thereof to the semiconductor element by the first bonding material and bonded at an outer peripheral part thereof to an inner periphery of the opening part by a second bonding material.

Abstract: According to various embodiments of the disclosure, an electronic device may comprise: a display, a first circuit board disposed under the display, at least one component disposed on one surface of the first circuit board, an interposer surrounding at least two sides of the at least one component and disposed on the first circuit board, and a second circuit board spaced apart from the first circuit board and including an area joined with the interposer. The interposer may include: a first interposer portion disposed along a first area of the first circuit board, a first end of the first interposer having at least a portion including a non-shielding area, and a second interposer portion disposed along a second area, adjacent to the first area, of the first circuit board, a second end of the second interposer facing the first end and having at least a portion including a non-shielding area.

Abstract: Package structures and methods of forming package structures are described. A method includes placing a first package within a recess of a first substrate. The first package includes a first die. The method further includes attaching a first sensor to the first package and the first substrate. The first sensor is electrically coupled to the first package and the first substrate.

Abstract: A semiconductor device includes a substrate, an adhesive layer formed on a lower surface of the substrate, a semiconductor element adhered to a lower surface of the adhesive layer, a through hole extending through the substrate and the adhesive layer and exposing a first electrode arranged on an upper surface of the semiconductor element, a via wiring formed in the through hole, a wiring layer formed on an upper surface of the substrate and electrically connected to the first electrode through the via wiring, and a protective insulation layer formed on the lower surface of the adhesive layer. The protective insulation layer covers an entirety of all side surfaces of the semiconductor element and a peripheral part of a lower surface of the semiconductor element and exposes a central part of the lower surface of the semiconductor element.

Abstract: A method of fabricating an integrated fan-out package is provided. A ring-shaped dummy die and a group of integrated circuit dies are mounted over a carrier, wherein the group of integrated circuit dies are surrounded by the ring-shaped dummy die. The ring-shaped dummy die and the group of integrated circuit dies over the carrier are encapsulated with an insulating encapsulation. A redistribution circuit structure is formed on the ring-shaped dummy die, the group of integrated circuit dies and the insulating encapsulation, wherein the redistribution circuit structure is electrically connected to the group of integrated circuit dies, and the ring-shaped dummy die is electrically floating.

Abstract: A head-mounted device capable of more highly accurately measuring the physical conditions of a wearer as a worker that are necessary for estimating the possibility of heat stroke is provided. A head-mounted device includes an outer shell; a first channel as a gap between a head of a wearer and the outer shell; a second channel provided in the outer shell and connected to the first channel; a fan configured to send air from one of the first channel and the second channel to the other; a salinity sensor configured to measure salt concentration of sweat of the wearer; a first humidity sensor configured to measure an absolute humidity of intake air entering one of the first channel and the second channel; and a second humidity sensor configured to measure an absolute humidity of exhaust air exiting from the other of the first channel and the second channel.

Abstract: Certain embodiments of the disclosure relate to an electronic device including a substrate having a shielding structure. The electronic device may include a first substrate, a second substrate, and a third substrate. The second substrate may include a first metal pattern connected to ground and including multiple first slits formed by removing a portion of the first metal pattern, each of the first slits having a cross shape, a second metal pattern connected to the ground and including multiple second slits formed by removing a portion of the second metal pattern, each of the second slits having the cross shape, and multiple ground vias extending through at least a portion of the second substrate so as to connect the first metal pattern of the first metal layer to the second metal pattern of the second metal layer. Various other embodiments are also disclosed.

Abstract: Direct-bonded native interconnects and active base dies are provided. In a microelectronic architecture, active dies or chiplets connect to an active base die via their core-level conductors. These native interconnects provide short data paths, which forgo the overhead of standard interfaces. The system saves redistribution routing as the native interconnects couple in place. The base die may contain custom logic, allowing the attached dies to provide stock functions. The architecture can connect diverse interconnect types and chiplets from various process nodes, operating at different voltages. The base die may have state elements for drive. Functional blocks aboard the base die receive native signals from diverse chiplets, and communicate with all attached chiplets. The chiplets may share processing and memory resources of the base die. Routing blockages are minimal, improving signal quality and timing. The system can operate at dual or quad data rates.

Abstract: A semiconductor package includes a first, second, third and fourth semiconductor chips sequentially stacked on one another. The second semiconductor chip includes a second substrate and a second substrate recess formed in an edge of a backside surface of the second substrate. The third semiconductor chip includes a third substrate and a first metal residual material provided in a peripheral region of a front surface of the third substrate. When the second semiconductor chip and the third semiconductor chip are bonded to each other such that the front surface of the third substrate and the backside surface of the second substrate face each other, the first metal residual material is located in the second substrate recess. A first bonding pad on the backside surface of the second substrate and a second bonding pad on the front surface of the third substrate are bonded to each other.

Abstract: A stacking apparatus that stacks substrate and a second substrate includes: a plurality of holding members that hold the first substrate, wherein the plurality of bolding members correct positional misalignment of the first substrate relative to the second substrate by preset amounts of correction, and the plurality of holding members include holding members having the amounts of correction that are different from each other. The stacking apparatus may further include a carrying unit that carries a holding member that is selected from among the plurality of holding members and holds the first substrate from a position here the holding member is housed to a position where the first substrate is held.

Abstract: Embodiments of die-to-die bonding schemes of three-dimensional (3D) memory devices are provided. In an example, a method for bonding includes dicing one or more device wafers to obtain a plurality of dies, placing at least one first die of the plurality of dies onto a first carrier wafer and at least one second die of the plurality of dies onto a second carrier wafer, and bonding the at least one first die each with a respective second die. The at least one first die and the at least one second die each are functional. In some embodiments, the method also includes removing, respectively, the first carrier wafer and the second carrier wafer to form a plurality of bonded semiconductor devices each having one of the first dies and the respective second die.

Abstract: A semiconductor device package includes a substrate, a first electronic component, a second electronic component, a package body and a shield. The substrate has a first surface and a second surface opposite to the first surface. The substrate defines a cavity from the second surface extending into the substrate. The first electronic component is disposed on the first surface of the substrate. The second electronic component is disposed within the cavity of the substrate. The package body is disposed on a portion of the first surface of the substrate and covers the first electronic component. The shield is disposed on external surfaces of the package body.

Abstract: A package structure includes a wiring structure, a first electronic device, a second electronic device and a reinforcement structure. The wiring structure includes at least one dielectric layer, and at least one circuit layer in contact with the dielectric layer. The at least one circuit layer includes at least one interconnection portion. The first electronic device and the second electronic device are electrically connected to the wiring structure. The second electronic device is electrically connected to the first electronic device through the at least one interconnection portion of the at least one circuit layer. The reinforcement structure is disposed above the at least one interconnection portion of the at least one circuit layer.

Abstract: A barrier layer is disposed on a copper surface, the barrier layer including an organic molecule. The organic molecule may be a nitrogen-containing molecule. The nitrogen-containing organic molecule includes 1 to 6 carbon atoms. The barrier layer may be deposited on an exposed copper surface before deposition of a surface finish.

Abstract: A semiconductor package includes a substrate having a first surface and a second surface opposite to the first surface. A semiconductor chip is on the first surface of the substrate. A passive element is on the second surface of the substrate. The substrate includes a first passive element pad and a second passive element pad that are exposed by the second surface. A dam extends downwardly from the second surface. The dam includes a first dam and a second dam. The passive element is disposed between the first dam and the second dam. The passive element includes a first electrode portion electrically connected to the first passive element pad. A second electrode portion is electrically connected to the second passive element pad.

Abstract: A 3D semiconductor device including: a first single crystal layer including a plurality of first transistors and a first metal layer, where a second metal layer is disposed atop the first metal layer; a plurality of logic gates including the first metal layer and first transistors; a plurality of second transistors disposed atop the second metal layer; a plurality of third transistors disposed atop the second transistors; a top metal layer disposed atop the third transistors; and a memory array including word-lines, where the memory array includes at least four memory mini arrays, where each of the mini arrays includes at least two rows by two columns of memory cells, where each memory cell includes one of the second transistors or one of the third transistors, and where one of the second transistors is self-aligned to one of the third transistors, being processed following a same lithography step.

Abstract: A computing chip can include one or more voltage regulators to decrease a standard voltage, such as twelve volts, to a relatively low operating voltage of its processing cores, typically around one volt. Because the power consumed by the cores can be substantial, such as three hundred watts or more, it is desirable to locate the voltage regulators as close as possible to the cores, to reduce the distances that relatively large currents have to travel in the chip circuitry. The voltage regulators can be embedded within the package, such as in a layered structure, in a layer that electrically connects to the cores. While the cores are typically manufactured using the smallest possible lithographic features, the voltage regulators are less demanding and can instead use relatively large lithographic features, which can be formed using relatively old technology, and can therefore be relatively inexpensive.

Abstract: A method for producing a 3D semiconductor device, the method comprising: providing a first level, said first level comprising a first single crystal layer; forming first alignment marks and control circuits in and/or on said first level, wherein said control circuits comprise first single crystal transistors, and wherein said control circuits comprise at least two interconnection metal layers; forming at least one second level disposed on top of said control circuits; performing a first etch step into said second level; and performing additional processing steps to form a plurality of first memory cells within said second level, wherein each of said memory cells comprise at least one second transistors, and wherein said additional processing steps comprise depositing a gate electrode for said second transistors.

Abstract: A fan-out type semiconductor package may include a frame, an upper chip stack, a first redistribution pattern, a lower chip stack, a second redistribution pattern and a redistribution post. The frame may have a cavity. The upper chip stack may be arranged in the cavity. The first redistribution pattern may be arranged under the frame. The first redistribution pattern may be electrically connected with the upper chip stack. The lower chip stack may be arranged under the first redistribution pattern. The second redistribution pattern may be arranged under the lower chip stack. The second redistribution pattern may be electrically connected with the lower chip stack. The redistribution post may be electrically connected between the first redistribution pattern and the second redistribution pattern. Thus, the fan-out type semiconductor package may have an improved heat dissipation characteristic with a thin thickness.

Abstract: An electronics module is provided. The electronics module includes a housing at least partially enclosing a first printed circuit board configured to couple the electronics module to a connector attached to a second printed circuit board. The electronics module includes a first heat sink disposed along a first surface of the housing and a second heat sink disposed along a second surface of the housing. One or more notches or apertures of the first printed circuit board are proximate to the connector thereby enabling an airflow through the second heat sink along the second surface of the housing to exhaust over a surface of the connector with an airflow through the first heat sink.

Abstract: A display panel includes a first substrate having a top surface and a side surface extending in a direction intersecting the top surface, a second substrate, an insulating layer disposed between the first substrate and the second substrate, a first insulating structure disposed between the insulating layer and the first substrate and being in contact with the insulating layer, a pixel, a signal line having a side surface substantially aligned with the side surface of the first substrate and disposed on the first substrate, a second insulating structure overlapping the signal line, being in contact with the first insulating structure, and having a side surface substantially aligned with the side surface of the first substrate, and a connection pad being in contact with the side surface of the first substrate, the side surface of the signal line, and the side surface of the second insulating structure.

Abstract: A display device includes: a panel unit that includes pixel drive circuits; and a panel terminal unit on an edge portion of the panel unit. The panel terminal unit includes: a board; wiring electrodes disposed on the board and connected to the pixel drive circuits; a mounted component mounted on the board and connected to the wiring electrodes; a protective film that is on the board and covers the wiring electrodes except for a mounting area where the mounted component is mounted on the board; and a resin portion that covers the mounted component and a portion of the protective film and not covers a rest of the protective film.

Abstract: A display device includes a first substrate and a second substrate facing each other, a plurality of pixels disposed between the first substrate and the second substrate, a plurality of conductive pads which transmits signals to the plurality of pixels, a flexible circuit film connected with the plurality of conductive pads, a protective film disposed on the flexible circuit film on lateral sides of the first substrate and the second substrate, and a chassis member disposed on the protective film on lateral sides of the first substrate and the second substrate.

Abstract: There is disclosed a mobile terminal including a display unit comprising a drive IC provided in a predetermined portion, a frame provided in a rear surface of the display unit, a flexible printed circuit board having one portion connected to the drive IC of the display unit and the other portion bent toward the rear surface of the display unit, a main board coupled to the frame and configured to control the drive IC via the flexible printed circuit board, and a heat transfer sheet configured to cover a front surface of the display unit and a predetermined portion of the first surface of the flexible printed circuit board, wherein at least predetermined portion of the heat transfer sheet is in contact with the frame, so that the heat generated in the drive IC and the light source of the display unit may be transferred to the frame and that the performance deterioration of the mobile terminal caused by the local overheat may be reduced and the difficulty in the user's holding the mobile terminal may be also red

Abstract: Provided is a semiconductor package including a substrate, a first semiconductor chip disposed on the substrate to have a rectangular shape with long and short sides, and a second semiconductor chip disposed on the first semiconductor chip to have a rectangular shape with long and short sides. Centers of the first and second semiconductor chips may be located at substantially the same position as that of the substrate, and the long side of the first semiconductor chip may be substantially parallel to a diagonal line of the substrate. Further, the long side of the second semiconductor chip may be not parallel to that of the first semiconductor chip.

Abstract: A die-stacked memory device incorporates a reconfigurable logic device to provide implementation flexibility in performing various data manipulation operations and other memory operations that use data stored in the die-stacked memory device or that result in data that is to be stored in the die-stacked memory device. One or more configuration files representing corresponding logic configurations for the reconfigurable logic device can be stored in a configuration store at the die-stacked memory device, and a configuration controller can program a reconfigurable logic fabric of the reconfigurable logic device using a selected one of the configuration files. Due to the integration of the logic dies and the memory dies, the reconfigurable logic device can perform various data manipulation operations with higher bandwidth and lower latency and power consumption compared to devices external to the die-stacked memory device.

Abstract: A multi-chip integrated circuit (IC) package is provided which is configured to protect against failure due to warpage. The IC package may comprise a substrate, a level-one IC die and a plurality of level-two IC dies. The level-one IC die having a surface that is electrically coupled to the substrate. The plurality of level-two IC dies is stacked above the level-one IC die. The plurality of level-two IC dies may each have an active surface that is electrically coupled to the substrate. The plurality of level-two IC dies may be arranged side by side such that the active surfaces of the plurality of level-two IC dies are positioned substantially in a same plane. Relative to a single die configuration, the level-two IC dies are separated thereby inhibiting cracking, peeling and/or other potential failures due to warpage of the IC package.

Abstract: Semiconductor packages are provided. The semiconductor packages may include an upper package including a plurality of upper semiconductor devices connected to an upper package substrate. The semiconductor packages may also include a lower package including a lower semiconductor device connected to a lower package substrate. The upper and lower packages may be connected to each other.

Abstract: An external direct connection usable for an embedded interconnect bridge package is described. In one example, a package has a substrate, a first semiconductor die having a first bridge interconnect region, and a second semiconductor die having a second bridge interconnect region. The package has a bridge embedded in the substrate, the bridge having a first contact area to connect to the first bridge interconnect region and a second contact area to connect to the second bridge interconnect region, and an external connection rail extending between the interconnect bridge and the first and second semiconductor dies to supply external connection to the first and second bridge interconnect regions.

Abstract: An electronic component includes a III-N transistor and a III-N rectifying device both encased in a single package. A gate electrode of the III-N transistor is electrically connected to a first lead of the single package or to a conductive structural portion of the single package, a drain electrode of the III-N transistor is electrically connected to a second lead of the single package and to a first electrode of the III-N rectifying device, and a second electrode of the III-N rectifying device is electrically connected to a third lead of the single package.

Abstract: A semiconductor package includes a substrate; a driving chip having first bumps on a first surface and bump pads on a second surface facing away from the first surface, and mounted to the substrate by the medium of the first bumps; a support member disposed on the substrate substantially horizontally with respect to the driving chip; and a plurality of memory chips substantially horizontally disposed on the driving chip and the support member such that one corner portions of the memory chips are positioned on the driving chip while being centered about the driving chip, wherein the respective memory chips have second bumps which are electrically connected with the respective bump pads of the driving chip, on one surfaces of the one corner portions of the memory chips which face the driving chip.

Abstract: A package structure including a first semiconductor element, a second semiconductor element, a semiconductor interposer and a substrate is provided. The first semiconductor element includes multiple first conductive bumps. The second semiconductor element includes multiple second conductive bumps. The semiconductor interposer includes a connection motherboard, at least one signal wire and at least one signal conductive column. The signal wire is disposed on the connection motherboard. The two ends of the signal wire are electrically connected to one of the first conductive bumps and one of the second conductive bumps respectively. The signal conductive column is electrically connected to the signal wire. The substrate is electrically connected to the signal conductive column. The first and the second semiconductor elements have the same circuit structure. The substrate of the package structure can simultaneously form a signal communication path with the first and the second semiconductor element respectively.

Abstract: A multi-chip integrated circuit (IC) package is provided which is configured to protect against failure due to warpage. The IC package may comprise a substrate, a level-one IC die and a plurality of level-two IC dies. The level-one IC die having a surface that is electrically coupled to the substrate. The plurality of level-two IC dies is stacked above the level-one IC die. The plurality of level-two IC dies may each have an active surface that is electrically coupled to the substrate. The plurality of level-two IC dies may be arranged side by side such that the active surfaces of the plurality of level-two IC dies are positioned substantially in a same plane. Relative to a single die configuration, the level-two IC dies are separated thereby inhibiting cracking, peeling and/or other potential failures due to warpage of the IC package.

Abstract: A structure comprises a first die, a second die, an interposer, a third die, and a fourth die. The first die and the second die each have a first surface and a second surface. First conductive connectors are coupled to the first surfaces of the first and second dies, and second conductive connectors are coupled to the second surfaces of the first and second dies. The interposer is over the first and second dies. A first surface of the interposer is coupled to the first conductive connectors, and a second surface of the interposer is coupled to third conductive connectors. The third and fourth dies are over the interposer and are coupled to the third conductive connectors. The first die is communicatively coupled to the second die through the interposer, and/or the third die is communicatively coupled to the fourth die through the interposer.

Abstract: An interconnect for transmitting an electric signal between electronic devices includes a first coupling element electromagnetically coupled to, and immediately juxtaposed to, a second coupling element. The first coupling element is mounted on and is electrically connected to a first electronic device having a first integrated circuit. The second coupling element may be mounted on and electrically connected to the first electronic device, and electrically connected to an interconnect on a second electronic device, or the second coupling element may be mounted on and electrically connected to the second electronic device.

Abstract: A packaged power supply module (100) comprising a chip (110) with a first power field effect transistor (FET) and a second chip (120) with a second FET conductively attached side-by-side onto a conductive carrier (130), the transistors having bond pads of a first area (210) and the carrier having bond pads of a second area (230) smaller than the first area. Conductive bumps (114, 115, 124, 125) attached to the transistor bond pads and conductive bumps (126) attached to the carrier bond pads have equal volume and are coplanar (150), the bumps on the transistor pads having a first height and the bumps on the carrier pads having a second height greater than the first height.

Abstract: A microelectronic package can include a substrate having first and second opposed surfaces and first and second apertures extending between the first and second surfaces, first and second microelectronic elements each having a surface facing the first surface of the substrate, a plurality of terminals exposed at the second surface in a central region thereof, and leads electrically connected between contacts of each microelectronic element and the terminals. The apertures can have first and second parallel axes extending in directions of the lengths of the respective apertures. The second surface can have a central region disposed between the first and second axes. Each microelectronic element can embody a greater number of active devices to provide memory storage array function than any other function. The terminals can be configured to carry all of the address signals transferred to the microelectronic package.

Abstract: A semiconductor structure includes a first die comprising a first substrate and a first bonding pad over the first substrate, a second die having a first surface and a second surface opposite the first surface, wherein the second die is stacked on the first die and a protection layer having a vertical portion on a sidewall of the second die, and a horizontal portion extending over the first die.

Abstract: A multi-die semiconductor device is disclosed. The device may include one or more first-sized die on a substrate and one or more second-sized die affixed over the one or more first-sized die. The second-sized die may have a larger footprint than the first-sized die. An internal molding compound may be provided on the substrate having a footprint the same size as the second-sized die. The second-sized die may be supported on the internal molding compound. Thereafter, the first and second-sized die and the internal molding compound may be encapsulated in an external molding compound.

Abstract: Embodiments provide a method comprising providing a multi-memory die that comprises multiple individual memory dies. Each of the individual memory dies is defined as an individual memory die within a wafer of semiconductor material during production of memory dies. The multi-memory die is created by singulating the wafer of semiconductor material into memory dies where at least one of the memory dies is a multi-memory die that includes multiple individual memory dies that are still physically connected together. The method further comprises coupling a semiconductor die to the multi-memory die.

Abstract: A method of forming a PV module includes forming conductors on a top surface of a PV coated substrate; forming insulators on the top surface of the PV coated substrate; and cutting the PV coated substrate to form a plurality of individual PV cells. The PV coated substrate is cut so that each of the PV cells has some of the conductors and an insulator on its top surface. Multiple PV cells are then joined to form a PV module by attaching an edge of a first one of the PV cells under an edge of a second one of the PV cells so that at least a portion of the conductors on the first PV cell electrically contacts a bottom surface of the second PV cell.

Abstract: Semiconductor dies are stacked offset from one another so that terminals located along two edges of each die are exposed. The two edges of the dies having terminals may be oriented in the same direction. Electrical connections may connect terminals on one die with terminals on another die, and the stack may be disposed on a wiring substrate to which the terminals of the dies may be electrically connected.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a base substrate; mounting a central integrated circuit over the base substrate; mounting a side package having a side package substrate along a peripheral region of the base substrate and laterally peripheral to the central integrated circuit with the side package substrate coplanar with the central integrated circuit; and encapsulating the central integrated circuit and the side package above the base substrate with a base encapsulation to form a planar surface over the central integrated circuit and the side package facing away from the base substrate.