Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) Patents (Class 257)
- Low workfunction layer for electron emission (e.g., photocathode electron emissive layer) (Class 257/10)
- Heterojunction (Class 257/12)
- Non-heterojunction superlattice (e.g., doping superlattice or alternating metal and insulator layers) (Class 257/28)
- Ballistic transport device (e.g., hot electron transistor) (Class 257/29)
- Tunneling through region of reduced conductivity (Class 257/30)
- Non-single crystal, or recrystallized, active junction adapted to be electrically shorted (e.g., "anti-fuse" element) (Class 257/50)
- Non-single crystal, or recrystallized, material forms active junction with single crystal material (e.g., monocrystal to polycrystal pn junction or heterojunction) (Class 257/51)
- Amorphous semiconductor material (Class 257/52)
- Non-single crystal, or recrystallized, material with specified crystal structure (e.g., specified crystal size or orientation) (Class 257/64)
- Non-single crystal, or recrystallized, material containing non-dopant additive, or alloy of semiconductor materials (e.g., Ge x Si 1- x, polycrystalline silicon with dangling bond modifier) (Class 257/65)
- Field effect device in non-single crystal, or recrystallized, Semiconductor material (Class 257/66)
- Schottky barrier to polycrystalline semiconductor material (Class 257/73)
- Plural recrystallized semiconductor layers (e.g., "3-dimensional integrated circuit") (Class 257/74)
- Recrystallized semiconductor material (Class 257/75)
- In combination with or also constituting light responsive device (Class 257/80)
- Active layer of indirect band gap semiconductor (Class 257/86)
- Plural light emitting devices (e.g., matrix, 7-segment array) (Class 257/88)
- With heterojunction (Class 257/94)
- With reflector, opaque mask, or optical element (e.g., lens, optical fiber, index of refraction matching layer, luminescent material layer, filter) integral with device or device enclosure or package (Class 257/98)
- With housing or contact structure (Class 257/99)
- Encapsulated (Class 257/100)
- With particular dopant concentration or concentration profile (e.g., graded junction) (Class 257/101)
- With particular dopant material (e.g., zinc as dopant in GaAs) (Class 257/102)
- With particular semiconductor material (Class 257/103)
- Controlled by nonelectrical, nonoptical external signal (e.g., magnetic field, pressure, thermal) (Class 257/108)
- Having only two terminals and no control electrode (gate), e.g., Shockley diode (Class 257/109)
- With light activation (Class 257/113)
- Bidirectional rectifier with control electrode (gate) (e.g., Triac) (Class 257/119)
- Five or more layer unidirectional structure (Class 257/132)
- Combined with field effect transistor (Class 257/133)
- Combined with other solid-state active device in integrated structure (Class 257/146)
- With extended latchup current level (e.g., gate turn off "GTO" device) (Class 257/147)
- With resistive region connecting separate sections of device (Class 257/154)
- With switching speed enhancement means (e.g., Schottky contact) (Class 257/155)
- With integrated trigger signal amplification means (e.g., amplified gate, "pilot thyristor", etc.) (Class 257/157)
- Lateral structure (Class 257/162)
- Emitter region feature (Class 257/163)
- Having at least four external electrodes (Class 257/167)
- With means to increase breakdown voltage (Class 257/168)
- With means to lower "ON" voltage drop (Class 257/172)
- Device protection (e.g., from overvoltage) (Class 257/173)
- With means to control triggering (e.g., gate electrode configuration, Zener diode firing, dV/Dt control, transient control by ferrite bead, etc.) (Class 257/175)
- With housing or external electrode (Class 257/177)
- Charge transfer device (Class 257/183.1)
- Light responsive structure (Class 257/184)
- With lattice constant mismatch (e.g., with buffer layer to accommodate mismatch) (Class 257/190)
- Having graded composition (Class 257/191)
- Field effect transistor (Class 257/192)
- Both semiconductors of the heterojunction are the same conductivity type (i.e., either n or p) (Class 257/196)
- Bipolar transistor (Class 257/197)
- Avalanche diode (e.g., so-called "Zener" diode having breakdown voltage greater than 6 volts, including heterojunction IMPATT type microwave diodes) (Class 257/199)
- Heterojunction formed between semiconductor materials which differ in that they belong to different periodic table groups (e.g., Ge (group IV) - GaAs (group III-V) or InP (group III-V) - CdTe (group II-VI)) (Class 257/200)
- Between different group IV-VI or II-VI or III-V compounds other than GaAs/GaAlAs (Class 257/201)
- Charge injection device (Class 257/214)
- Charge transfer device (Class 257/215)
- Responsive to non-optical, non-electrical signal (Class 257/252)
- With current flow along specified crystal axis (e.g., axis of maximum carrier mobility) (Class 257/255)
- Junction field effect transistor (unipolar transistor) (Class 257/256)
- Having insulated electrode (e.g., MOSFET, MOS diode) (Class 257/288)
- To compound semiconductor (Class 257/472)
- As active junction in bipolar transistor (e.g., Schottky collector) (Class 257/474)
- With doping profile to adjust barrier height (Class 257/475)
- In integrated structure (Class 257/476)
- In voltage variable capacitance diode (Class 257/480)
- Avalanche diode (e.g., so-called "Zener" diode having breakdown voltage greater than 6 volts) (Class 257/481)
- With means to prevent edge breakdown (Class 257/483)
- Specified materials (Class 257/485)
- Field relief electrode (Class 257/488)
- In integrated circuit (Class 257/491)
- With electric field controlling semiconductor layer having a low enough doping level in relationship to its thickness to be fully depleted prior to avalanche breakdown (e.g., RESURF devices) (Class 257/493)
- Reverse-biased pn junction guard region (Class 257/494)
- Floating pn junction guard region (Class 257/495)
- With physical configuration of semiconductor surface to reduce electric field (e.g., reverse bevels, double bevels, stepped mesas, etc.) (Class 257/496)
- Including high voltage or high power devices isolated from low voltage or low power devices in the same integrated circuit (Class 257/500)
- With contact or metallization configuration to reduce parasitic coupling (e.g., separate ground pads for different parts of integrated circuit) (Class 257/503)
- Including means for establishing a depletion region throughout a semiconductor layer for isolating devices in different portions of the layer (e.g., "JFET" isolation) (Class 257/504)
- With polycrystalline semiconductor isolation region in direct contact with single crystal active semiconductor material (Class 257/505)
- Including dielectric isolation means (Class 257/506)
- Passive components in ICs (Class 257/528)
- With pn junction isolation (Class 257/544)
- Lateral bipolar transistor structure (Class 257/557)
- With multiple separately connected emitter, collector, or base regions in same transistor structure (Class 257/563)
- Plural non-isolated transistor structures in same structure (Class 257/566)
- Including additional component in same, non-isolated structure (e.g., transistor with diode, transistor with resistor, etc.) (Class 257/577)
- With enlarged emitter area (e.g., power device) (Class 257/578)
- With means to increase inverse gain (Class 257/585)
- With non-planar semiconductor surface (e.g., groove, mesa, bevel, etc.) (Class 257/586)
- With specified electrode means (Class 257/587)
- Avalanche transistor (Class 257/589)
- With means to reduce minority carrier lifetime (e.g., region of deep level dopant or region of crystal damage) (Class 257/590)
- With emitter region having specified doping concentration profile (e.g., high-low concentration step) (Class 257/591)
- With base region having specified doping concentration profile or specified configuration (e.g., inactive base more heavily doped than active base or base region has constant doping concentration portion (e.g., epitaxial base)) (Class 257/592)
- With means to increase current gain or operating frequency (Class 257/593)
- With specified dopant profile (Class 257/596)
- With plural junctions whose depletion regions merge to vary voltage dependence (Class 257/598)
- With means to increase active junction area (e.g., grooved or convoluted surface) (Class 257/599)
- With physical configuration to vary voltage dependence (e.g., mesa) (Class 257/600)
- Plural diodes in same non-isolated structure, or device having three or more terminals (Class 257/601)
- With specified housing or contact (Class 257/602)
- With thin active central semiconductor portion surrounded by thicker inactive shoulder (e.g., for mechanical support) (Class 257/619)
- With peripheral feature due to separation of smaller semiconductor chip from larger wafer (e.g., scribe region, or means to prevent edge effects such as leakage current at peripheral chip separation area) (Class 257/620)
- With electrical contact in hole in semiconductor (e.g., lead extends through semiconductor body) (Class 257/621)
- Groove (Class 257/622)
- Mesa structure (e.g., including undercut or stepped mesa configuration or having constant slope taper) (Class 257/623)
- With specified crystal plane or axis (Class 257/627)
- With dam or vent for encapsulant (Class 257/667)
- On insulating carrier other than a printed circuit board (Class 257/668)
- With stress relief (Class 257/669)
- With separate tie bar element or plural tie bars (Class 257/670)
- Small lead frame (e.g., "spider" frame) for connecting a large lead frame to a semiconductor chip (Class 257/672)
- With bumps on ends of lead fingers to connect to semiconductor (Class 257/673)
- With means for controlling lead tension (Class 257/674)
- With heat sink means (Class 257/675)
- With structure for mounting semiconductor chip to lead frame (e.g., configuration of die bonding flag, absence of a die bonding flag, recess for LED) (Class 257/676)
- Of specified material other than copper (e.g., Kovar (T.M.)) (Class 257/677)
- Smart (e.g., credit) card package (Class 257/679)
- With window means (Class 257/680)
- With desiccant, getter, or gas filling (Class 257/682)
- With means to prevent explosion of package (Class 257/683)
- With semiconductor element forming part (e.g., base, of housing) (Class 257/684)
- Multiple housings (Class 257/685)
- Housing or package filled with solid or liquid electrically insulating material (Class 257/687)
- With large area flexible electrodes in press contact with opposite sides of active semiconductor chip and surrounded by an insulating element, e.g., ring (Class 257/688)
- With contact or lead (Class 257/690)
- Insulating material (Class 257/701)
- Entirely of metal except for feedthrough (Class 257/708)
- With provision for cooling the housing or its contents (Class 257/712)
- For plural devices (Class 257/723)
- Device held in place by clamping (Class 257/727)
- For high frequency (e.g., microwave) device (Class 257/728)
- Portion of housing of specific materials (Class 257/729)
- Outside periphery of package having specified shape or configuration (Class 257/730)
- With housing mount (Class 257/731)
- Beam leads (i.e., leads that extend beyond the ends or sides of a chip component) (Class 257/735)
- Bump leads (Class 257/737)
- With textured surface (Class 257/739)
- With means to prevent contact from penetrating shallow PN junction (e.g., prevention of aluminum "spiking") (Class 257/740)
- Of specified material other than unalloyed aluminum (Class 257/741)
- Of specified configuration (Class 257/773)
- Chip mounted on chip (Class 257/777)
- Flip chip (Class 257/778)
- Solder wettable contact, lead, or bond (Class 257/779)
- Ball or nail head type contact, lead, or bond (Class 257/780)
- Die bond (Class 257/782)
- Wire contact, lead, or bond (Class 257/784)
- By pressure alone (Class 257/785)
- Configuration or pattern of bonds (Class 257/786)
- Containers or mountings (EPO) (Class 257/E39.002)
- Characterized by current path (EPO) (Class 257/E39.004)
- Characterized by shape of element (EPO) (Class 257/E39.005)
- Characterized by material (EPO) (Class 257/E39.006)
- Devices comprising junction of dissimilar materials, e.g., Josephson-effect devices (EPO) (Class 257/E39.012)
- Permanent superconductor devices (EPO) (Class 257/E39.017)
- Characterized by semiconductor body (EPO) (Class 257/E31.002)
- Adapted to control current flow through device (e.g., photoresistor) (EPO) (Class 257/E31.052)
- Structurally associated with electric light source (e.g., electroluminescent light source) (EPO) (Class 257/E31.095)
- Detail of nonsemiconductor component of radiation-sensitive semiconductor device (EPO) (Class 257/E31.11)
- Including bulk negative resistance effect component (EPO) (Class 257/E27.002)
- Including solid state component for rectifying, amplifying, or switching without a potential barrier or surface barrier (EPO) (Class 257/E27.004)
- Including component using galvano-magnetic effects, e.g. Hall effect (EPO) (Class 257/E27.005)
- Including piezo-electric, electro-resistive, or magneto-resistive component (EPO) (Class 257/E27.006)
- Including superconducting component (EPO) (Class 257/E27.007)
- Including thermo-electric or thermo-magnetic component with or without a junction of dissimilar material or thermo-magnetic component (EPO) (Class 257/E27.008)
- Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or Including integrated passive circuit elements (EPO) (Class 257/E27.009)
- Including only passive thin-film or thick-film elements on a common insulating substrate (EPO) (Class 257/E27.114)
- Including organic material in active region (Class 257/E27.117)
- Including semiconductor component with at least one potential barrier or surface barrier adapted for light emission structurally associated with controlling devices having a variable impedance and not being light sensitive (EPO) (Class 257/E27.12)
- Including active semiconductor component sensitive to infrared radiation, light, or electromagnetic radiation of a shorter wavelength (EPO) (Class 257/E27.122)
- Details not otherwise provided for, e.g., protection against moisture (EPO) (Class 257/E23.002)
- Mountings, e.g., nondetachable insulating substrates (EPO) (Class 257/E23.003)
- Arrangements for conducting electric current to or from solid-state body in operation, e.g., leads, terminal arrangements (EPO) (Class 257/E23.01)
- Arrangements for cooling, heating, ventilating or temperature compensation; temperature-sensing arrangements (EPO) (Class 257/E23.08)
- Protection against radiation, e.g., light, electromagnetic waves (EPO) (Class 257/E23.114)
- Encapsulations, e.g., encapsulating layers, coatings, e.g., for protection (EPO) (Class 257/E23.116)
- Fillings or auxiliary members in containers or encapsulations, e.g., centering rings (EPO) (Class 257/E23.135)
- Arrangements for conducting electric current within device in operation from one component to another, interconnections, e.g., wires, lead frames (EPO) (Class 257/E23.141)
- Marks applied to semiconductor devices or parts, e.g., registration marks, test patterns, alignment structures, wafer maps (EPO) (Class 257/E23.179)
- Containers; seals (EPO) (Class 257/E23.18)
- Protection against mechanical damage (EPO) (Class 257/E23.194)
- Manufacture or treatment of semiconductor device (EPO) (Class 257/E21.002)
- Testing or measuring during manufacture or treatment or reliability measurement, i.e., testing of parts followed by no processing which modifies parts as such (EPO) (Class 257/E21.521)
- Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (EPO) (Class 257/E21.532)
