Abstract: A gas turbine engine of an aircraft includes an engine control configured to monitor and control operation of the gas turbine engine in real-time and a communication adapter that includes a housing and a plurality of antennas in the housing. The communication adapter is configured to establish communication with the engine control and wireless communication with an offboard system external to the aircraft through at least one of the antennas of the communication adapter. The housing includes a metal chassis with a non-conductive substrate between the metal chassis and the antennas. The antennas are partitioned into two or more portions. A communication interface of the communication adapter is configured to establish wireless communication through the antennas using two or more different wireless communication protocols.

Abstract: A communication adapter of a gas turbine engine of an aircraft includes a housing configured to be coupled to the gas turbine engine, a plurality of antennas integrated in the housing, a memory system and processing circuitry. The processing circuitry is configured to establish communication with an engine control mounted on the gas turbine engine, establish wireless communication between the communication adapter and an offboard system external to the aircraft through at least one of the antennas integrated in the housing of the communication adapter, and authenticate communication requests at the communication adapter for data sent between the offboard system and the engine control.

Abstract: An embodiment package includes a first integrated circuit die, an encapsulant around the first integrated circuit die, and a conductive line electrically connecting a first conductive via to a second conductive via. The conductive line includes a first segment over the first integrated circuit die and having a first lengthwise dimension extending in a first direction and a second segment having a second lengthwise dimension extending in a second direction different than the first direction. The second segment extends over a boundary between the first integrated circuit die and the encapsulant.

Abstract: A selectable increase in the common source inductance is obtained by a layout for a power module used for a half-bridge phase leg in an inverter for an electrically-driven vehicle. The power module comprises a pair of transistor dies connected to positive, negative, and AC conductive tracks for carrying bridge currents. The module includes a pair of gate drive pins and a pair of gate drive coils connecting a respective pin and die. The gate drive coils are disposed in a region between the positive and negative tracks containing a flux generated by the currents having a locally greatest rate of change. The coils may preferably be comprised of traces on an auxiliary printed circuit board incorporated in the module. The gate drive pins can be on the gate side or the emitter side of the transistor dies.

Abstract: To downsize a power smoothing capacitor substrate unit for opening/closing modules configured to convert a low-voltage DC power to AC power to drive a three-phase AC motor. A plurality of unit capacitors (101) being a conductive polymer aluminum electrolytic capacitor are connected between a positive-side first conductive plate (10P0) connected to a positive-side power supply terminal (125P) and a negative-side second conductive plate (10N) connected to a negative-side power supply terminal (124N), and three or more capacitor rows are arranged for each of three pairs of divided power supply terminal blocks (130B) connected to the opening/closing modules (90B) and one or more capacitor rows are arranged between the terminal blocks. Accordingly, ripple currents in a large number of capacitors connected in parallel to each other are equalized to prevent a temperature increase in each capacitor.

Abstract: Semiconductor packages are provided. The semiconductor packages may include an upper package including a plurality of upper semiconductor devices connected to an upper package substrate. The semiconductor packages may also include a lower package including a lower semiconductor device connected to a lower package substrate. The upper and lower packages may be connected to each other.

Abstract: Spalling is employed to generate a single crystalline semiconductor layer. Complementary metal oxide semiconductor (CMOS) logic and memory devices are formed on a single crystalline semiconductor substrate prior to spalling. Organic light emitting diode (OLED) driving circuitry, solar cells, sensors, batteries and the like can be formed prior to, or after, spalling. The spalled single crystalline semiconductor layer can be transferred to a substrate. OLED displays can be formed into the spalled single crystalline semiconductor layer to achieve a structure including an OLED display with semiconductor driving circuitry and other functions integrated on the single crystalline semiconductor layer.

Abstract: An external direct connection usable for an embedded interconnect bridge package is described. In one example, a package has a substrate, a first semiconductor die having a first bridge interconnect region, and a second semiconductor die having a second bridge interconnect region. The package has a bridge embedded in the substrate, the bridge having a first contact area to connect to the first bridge interconnect region and a second contact area to connect to the second bridge interconnect region, and an external connection rail extending between the interconnect bridge and the first and second semiconductor dies to supply external connection to the first and second bridge interconnect regions.

Abstract: A semiconductor package includes a substrate; a driving chip having first bumps on a first surface and bump pads on a second surface facing away from the first surface, and mounted to the substrate by the medium of the first bumps; a support member disposed on the substrate substantially horizontally with respect to the driving chip; and a plurality of memory chips substantially horizontally disposed on the driving chip and the support member such that one corner portions of the memory chips are positioned on the driving chip while being centered about the driving chip, wherein the respective memory chips have second bumps which are electrically connected with the respective bump pads of the driving chip, on one surfaces of the one corner portions of the memory chips which face the driving chip.

Abstract: Techniques and design methodologies for using a single mask set to create devices of different sizes are disclosed. A mask with a plurality of tiles is disclosed. Each of the tiles has a number of fixed resource blocks, multiple logic blocks and is surrounded by a scribe region. The tiles may be connected to one or more adjacent tiles through interconnect lines that enable the fixed resource blocks and logic blocks in one tile to communicate with the fixed resource and logic blocks in an adjacent tile. The mask set may be used to produce devices of different sizes. Using a mask set that can handle a variety of design sizes with varying resources may in turn reduce mask cost.

Abstract: A package structure including a first semiconductor element, a second semiconductor element, a semiconductor interposer and a substrate is provided. The first semiconductor element includes multiple first conductive bumps. The second semiconductor element includes multiple second conductive bumps. The semiconductor interposer includes a connection motherboard, at least one signal wire and at least one signal conductive column. The signal wire is disposed on the connection motherboard. The two ends of the signal wire are electrically connected to one of the first conductive bumps and one of the second conductive bumps respectively. The signal conductive column is electrically connected to the signal wire. The substrate is electrically connected to the signal conductive column. The first and the second semiconductor elements have the same circuit structure. The substrate of the package structure can simultaneously form a signal communication path with the first and the second semiconductor element respectively.

Abstract: An organic light emitting display apparatus and method of manufacturing the same to improve an image quality of the organic light emitting display apparatus. The organic light emitting display apparatus includes: a first electrode formed on a substrate; an intermediate layer disposed on the first electrode, the intermediate layer having an organic emission layer; and a second electrode formed on the intermediate layer, wherein the first electrode includes an etching unit facing the intermediate layer.

Abstract: An organic light emitting diode (OLED) display includes a first electrode including a conductive black layer, a second electrode facing the first electrode, and an organic emission layer provided between the first electrode and the second electrode.

Abstract: An interconnect for transmitting an electric signal between electronic devices includes a first coupling element electromagnetically coupled to, and immediately juxtaposed to, a second coupling element. The first coupling element is mounted on and is electrically connected to a first electronic device having a first integrated circuit. The second coupling element may be mounted on and electrically connected to the first electronic device, and electrically connected to an interconnect on a second electronic device, or the second coupling element may be mounted on and electrically connected to the second electronic device.

Abstract: In one embodiment, a method includes receiving an input signal in transmitter circuitry of a first semiconductor die and processing the input signal, sending the processed input signal to an isolation circuit of the die to generate a voltage isolated signal, and outputting the voltage isolated signal from the isolation circuit to a second semiconductor die coupled to the first semiconductor die via a bonding mechanism. Note that this second semiconductor die may not include isolation circuitry.

Abstract: A packaged power supply module (100) comprising a chip (110) with a first power field effect transistor (FET) and a second chip (120) with a second FET conductively attached side-by-side onto a conductive carrier (130), the transistors having bond pads of a first area (210) and the carrier having bond pads of a second area (230) smaller than the first area. Conductive bumps (114, 115, 124, 125) attached to the transistor bond pads and conductive bumps (126) attached to the carrier bond pads have equal volume and are coplanar (150), the bumps on the transistor pads having a first height and the bumps on the carrier pads having a second height greater than the first height.

Abstract: Some embodiments of the invention provide a programmable system in package (“PSiP”). The PSiP includes a single IC housing, a substrate and several IC's that are arranged within the single IC housing. At least one of the IC's is a configurable IC. In some embodiments, the configurable IC is a reconfigurable IC that can reconfigure more than once during run time. In some of these embodiments, the reconfigurable IC can be reconfigured at a first clock rate that is faster (i.e., larger) than the clock rates of one or more of the other IC's in the PSiP. The first clock rate is faster than the clock rate of all of the other IC's in the PSiP in some embodiments.

Abstract: An electronic module. One embodiment includes a carrier. A first transistor is attached to the carrier. A second transistor is attached to the carrier. A first connection element includes a first planar region. The first connection element electrically connects the first transistor to the carrier. A second connection element includes a second planar region. The second connection element electrically connects the second transistor to the carrier. In one embodiment, a distance between the first planar region and the second planar region is smaller than 100 ?m.

Abstract: Semiconductor devices, methods of manufacturing thereof, and methods of arranging circuit components of an integrated circuit are disclosed. In one embodiment, a semiconductor device includes an array of a plurality of devices arranged in a plurality of rows. At least one electrostatic discharge (ESD) protection circuit or a portion thereof is disposed in at least one of the plurality of rows of the array of the plurality of devices.

Abstract: A semiconductor device is provided, which is capable of improving mounting flexibility relatively and increasing general versatility, as well as realizing heat radiation characteristics and low on-resistance. Moreover, the semiconductor device is provided, which is capable of improving reliability, performing processing in manufacturing processes easily and reducing manufacturing costs. Also, the semiconductor device capable of decreasing the mounting area is provided. A semiconductor chip in which an IGBT is formed and a semiconductor chip in which a diode is formed are mounted over a die pad. Then, the semiconductor chip and the semiconductor chip are connected by using a clip. The clip is arranged so as not to overlap with bonding pads formed at the semiconductor chip in a flat state. The bonding pads formed at the semiconductor chip are connected to electrodes by using wires.

Abstract: A packaged microchip has a base, at least one spacer coupled to the base, and first and second microchips mounted to the at least one spacer. The at least one spacer is configured to substantially prevent leakage current between the first and second microchips.

Abstract: This research discloses an ultra wideband system-on-package (SoP). The SoP includes a package body; a first integrated circuit mounted on the package body; a first signal transmission unit connected to the first integrated circuit; a signal via connected to the first signal transmission unit and including a slab line and a trough line; and a second signal transmission unit connected to the signal via. The technology of the present research can transmit ultra broadband signals by minimizing discontinuity of signals appearing during vertical transition that occurs in the course of a signal transmission to/from an external circuit, and a fabrication method thereof.

Abstract: A display apparatus including a TFT array substrate on which TFTs are formed in an array, a counter substrate disposed so as to face the TFT array substrate, and a sealing pattern for adhering the TFT array substrate and the counter substrate to each other, wherein the counter substrate has a counter electrode, and the TFT array substrate has a first conductive layer, a first insulating film formed on the first conductive layer, a second conductive layer disposed so as to intersect the first conductive layer via the first insulating film, a second insulating film formed on the second conductive layer and having at least two layers, and common electrode wiring provided below the sealing pattern and electrically connected to the counter electrode by the sealing pattern, and the sealing pattern overlaps the second conductive layer via the second insulating film.

Abstract: Disclosed herein is a semiconductor memory device including floating body cells. The semiconductor memory device includes memory cell active regions formed on a Silicon-On Isolator (SOI) semiconductor substrate, a plurality of floating body cell transistors formed in the memory cell active regions, and “inactive transistors” for providing cell isolation that are formed between the plurality of floating body cell transistors. Here, the inactive transistors for providing cell isolation are controlled so that they always are in an OFF state while the semiconductor memory device is operating.

Abstract: A memory card includes a circuit board, a first semiconductor chip mounted on the circuit board with a bump sandwiched between the first semiconductor chip and the circuit board, a second semiconductor chip mounted on the circuit board with a bump sandwiched between the second semiconductor chip and the circuit board with a clearance not greater than 1 mm between the first semiconductor chip and the second semiconductor chip, a first sealing resin layer surrounding the bump and existing between the first semiconductor chip and the circuit board, and a second sealing resin layer surrounding the bump and existing between the second semiconductor chip and the circuit board, and a cover covering the first semiconductor chip, the second semiconductor chip on a principal face of the circuit board.

Abstract: An electronic circuit arrangement includes a heat sink and a first circuit carrier which is thermally coupled to the heat sink, lies flat on the latter and is intended to wire electronic components of the circuit arrangement. Provided for at least one electronic component is a special arrangement which is associated with a considerably increased heat dissipation capability for the relevant component and, in addition, also affords further advantages in connection with changes in the population and/or line routing which might occur in practice. The important factor for this is that the component is arranged under a second circuit carrier which is held in a recess in the first circuit carrier. The recess passes through to the top side of the heat sink.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing an integrated circuit substrate having a non-active side and an active side; forming a recess in the integrated circuit substrate from the non-active side exposing a first contact and a second contact with the first contact and the second contact along the active side; forming a first via, having a first via extension extended beyond the non-active side and an opening at the non-active side, within the recess; forming a barrier liner within the opening with the barrier liner exposed beyond the non-active side; and forming a second via over the barrier liner and within the opening of the first via with the second via exposed beyond the non-active side.

Abstract: Integrated circuit packages that connect solder balls between solder ball pads of a die and substrate pads of a printed circuit board (PCB). The solder balls are electrically disconnected from any circuit of the die, i.e., “dummy” solder balls, and are used to temporarily hold the die in position with respect to the PCB until the circuit is wire bonded and an underfill material is cured between the die and the PCB to more permanently connect them together. The underfill material is selected to have a coefficient of thermal expansion (CTE) that is substantially equal to the CTE of the solder balls to prevent thermal mismatch problems. An overmolding compound is disposed about the die and the underfill material and about the wire bonds to complete the package. Various arrangements of the solder ball pads on the die include columnar and row, corner, diagonal, cross, and periphery arrangements.

Abstract: A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.

Abstract: A semiconductor IC-embedded module 100 comprises a multilayer substrate 101 having first and second insulating layers 101a and 101b, and a controller IC 012 and memory IC 103 that are embedded in the multilayer substrate 101. A wiring layer 104 is formed as an internal layer in the multilayer substrate 101. Part of the wiring layer 104 constitutes a bus line 104X. The controller IC 102 or memory IC 103 is embedded in the second insulating layer 101b. First and second ground layers 105a and 105b are provided respectively in the first and second insulating layers 101a and 101b. The effect of noise generated by bus lines is reduced, and an additional reduction in noise and a decrease in size and thickness are achieved by laying out bus lines that connect the semiconductor ICs so that distances are minimized.

Abstract: Provided is a semiconductor memory module allowing a filling member formed between a module substrate and memory chips mounted on the module substrate to completely fill the space between the module substrate and the memory chips. According to embodiments of the present invention, the semiconductor memory module includes a module substrate having at least one memory chip mounted on the substrate such that its edges are oblique to major and minor axes bisecting the module substrate. The oblique orientation allows for an improved opening between memory chips formed on the substrate so that the filling member may be properly formed between the module substrate and the memory chips to prevent voids where the filling member is not formed.

Abstract: Integrated circuit packages are formed from a panel where the panel is separated by laser cutting the panel. In some embodiments, the panel is attached to the carrier for the formation of interconnect layers on the panel. Afterwards, the panel is cut with a laser while on the carrier to separate the integrated circuit packages. A tape or other type of structure may be attached to the top of the packages after the laser cutting. The integrated circuit packages are removed from the carrier by releasing the adhesive and removing the integrated circuit packages with the tape. The packages are then removed from the tape.

Abstract: A chip package for a computer system includes a substrate having a first region and a second region on a first surface, at least one die coupled to the first region on the first surface of the substrate and a main logic board coupled to the second region on the first surface of the substrate. By coupling the die and the main logic board on the first surface of the substrate, an overall thickness of the chip package is reduced.

Abstract: A semiconductor device having a plurality of chips is reduced in size. In HSOP (semiconductor device) for driving a three-phase motor, a first semiconductor chip including a pMISFET and a second semiconductor chip including an nMISFET are mounted over each of a first tab, second tab, and third tab. The drains of the pMISFET and nMISFET over each tab are electrically connected with each other. Thus, two of six MISFETs can be placed over each of three tabs divided in correspondence with the number of phases of the motor, and they can be packaged in one in a compact manner. As a result, the size of the HSOP for driving a three-phase motor, having a plurality of chips can be reduced.

Abstract: A power semiconductor device, having a first semiconductor region, and a second semiconductor region; mounted with a first electrode pad on a semiconductor substrate main surface at the inside surrounded by the third semiconductor region, mounted in the second semiconductor region, and a multilayer substrate having first and second wiring layers, to take out an electrode of the semiconductor chip; joining the first wiring layer part for the first electrode, mounted on the multilayer substrate, in a region opposing to the semiconductor substrate main surface at the inside surrounded by the third semiconductor region, and the first electrode pad, by a conductive material; joining the first wiring layer part for the first electrode, and the second wiring layer at a conductive part; and extending the second wiring layer to the outside of a region opposing the semiconductor substrate main surface at the inside surrounded by the third semiconductor region.

Abstract: A wafer level package, and a semiconductor wafer, electronic system, and a memory module that include one or more of the wafer level packages, and methods of fabricating the die packages on a wafer level, and integrated circuit modules that include one or more packages are provided. In one embodiment, the die package comprises a redistribution layer interconnecting two or more dies disposed on a substrate, typically a semiconductor wafer, the redistribution layer including a first trace connecting a bond pad of each of two dies, and a second trace connecting one of the bond pads of the two dies to a ball pad. The die package of the invention can comprise memory devices such as static random access memories (SRAMs), and can be incorporated into a variety of electronic systems as part of a memory package such as single in line memory modules (SIMMs) or dual in line memory modules.

Abstract: A semiconductor chip comprises a semiconductor substrate having integrated circuits formed on a cell region and a peripheral circuit region adjacent to each other. A bond pad-wiring pattern is formed on the semiconductor substrate. A pad-rearrangement pattern is electrically connected to the bond pad-wiring pattern. The pad-rearrangement pattern includes a bond pad disposed over at least a part of the cell region. The bond pad-wiring pattern is formed substantially in a center region of the semiconductor substrate. Thus, with the embodiments of the present invention, the overall chip size can thereby be substantially reduced and an MCP can be fabricated without the problems mentioned above.

Abstract: In a semiconductor integrated circuit device including a semiconductor integrated circuit board having a mask ROM area and an internal bus and a programmable ROM which is mounted on the semiconductor integrated circuit board and which has a plurality of ROM connecting terminals, the ROM connecting terminals are electrically connected to a plurality of bus connecting terminals connected to the internal bus, respectively. The bus connecting terminals may be disposed around periphery of the semiconductor integrated circuit board, may be formed on the mask ROM area, and may be disposed on the internal bus. In this event, the ROM connecting terminals and the bus connecting terminals are electrically connected to each other using wire bonding technique.

Abstract: A CMOS imager and non-volatile memory are integrated on a single substrate along with logic and support circuitry for decoding and processing optical information received by the CMOS imager. A protective layer covers the non-volatile memory contained on the substrate for blocking light received by the CMOS imager. The protective layer can be a metal layer used as an interconnect over other areas of the substrate or an opaque layer provided during the fabrication process. Integrating a CMOS imager, non-volatile memory and peripheral circuitry for decoding and processing optical information received by the CMOS imager allows for a single chip image sensing device, such as a digital camera.

Abstract: To pick and place standard dice on a new base for obtaining an appropriate and wider distance between dice than the original distance of dice on a wafer. The package structure has a larger size of balls array than the size of the die by fan out type package. Moreover, the die may be packaged with passive components or other dice with a side by side structure or a stacking structure.

Abstract: A semiconductor chip has one or more peripheral bond pads. The semiconductor chip comprises a semiconductor substrate having a cell region and a peripheral circuit region adjacent to each other. A bond pad-wiring pattern is formed on at least a part of the peripheral region of the semiconductor substrate. A passivation layer is formed on the bond pad-wiring pattern and exposed portions of the semiconductor substrate; a pad-rearrangement pattern disposed over the passivation layer and electrically connected to the bond pad-wiring pattern; and an insulating layer formed over the pad-rearrangement pattern. The insulating layer has an opening therein that exposes a portion of the pad-rearrangement pattern to define a bond pad. The bond pad is disposed over at least a part of the cell region.

Abstract: An apparatus is described incorporating an interposer having a cavity for a portion of an antenna structure, having conductor through vias, a top Si part having interconnection wiring and having pads for electrically mounting an integrated circuit chip thereon, wherein the top Si part mates with the interposer electrically and mechanically. The interposer and top Si part may be scaled to provide an array of functional units. The invention overcomes the problem of combining a high efficient antenna with integrated circuit chips in a Si package with signal frequencies from 1 to 100 GHz and the problem of shielding components proximate to the antenna and reduces strain arising from mismatching of TCEs.

Abstract: A power semiconductor device, having a first semiconductor region, and a second semiconductor region; mounted with a first electrode pad on a semiconductor substrate main surface at the inside surrounded by the third semiconductor region, mounted in the second semiconductor region, and a multilayer substrate having first and second wiring layers, to take out an electrode of the semiconductor chip; joining the first wiring layer part for the first electrode, mounted on the multilayer substrate, in a region opposing to the semiconductor substrate main surface at the inside surrounded by the third semiconductor region, and the first electrode pad, by a conductive material; joining the first wiring layer part for the first electrode, and the second wiring layer at a conductive part; and extending the second wiring layer to the outside of a region opposing the semiconductor substrate main surface at the inside surrounded by the third semiconductor region.

Abstract: A semiconductor module has a coupling substrate which is used for the internal electrical coupling of an integrated circuit on adjacent semiconductor chips. The semiconductor chips have integrated circuits and are arranged on a mount structure. The semiconductor chips are externally connected to external contacts. The coupling substrate overlaps edge areas of the adjacent semiconductor chips.

Abstract: A printed circuit board having embedded chips, composed of a central layer having an embedded chip, an insulating layer formed on one surface or both surfaces of the central layer and having a via hole filled with conductive ink, and a circuit layer formed on the insulating layer and having a via hole and a circuit pattern electrically connected to the chip of the central layer through the via hole of the insulating layer. In addition, a method of fabricating a printed circuit board including embedded chips is provided.

Abstract: A filling paste structure and process of wafer level package is disclosed. The process comprises filling an adhesive material to fill among plurality of dice and cover the plurality of dice. The pluralities of dice are adhered to glue pattern with viscosity in common state formed on a removable substrate. A rigid substrate is coated by adhesive material to adhere the dice. Then, pluralities of dice are departed from the glue pattern by a special environment after attaching the rigid base substrate.

Abstract: An method of packaging an electronic device. The method for packaging the device including: providing a first substrate, a second substrate and an integrated circuit chip having a first side and an opposite second side, a first set of chip pads on the first side and a second set of chip pads on the second side of the integrated circuit chip, chip pads of the first set of chip pads physically and electrically connected to corresponding substrate pads on the first substrate and chip pads of the second set of chip pads physically and electrically connected to substrate pads of the substrate.

Abstract: There is provided a method for forming a gate using a gate layout of a semiconductor device. The layout includes an active region with a stepped side boundary, a plurality of gates crossing over the active region, and tabs attached to the gates on the side boundary of the active region, wherein two tabs adjacent by a topology of the stepped side boundary are disposed in an oblique direction. The gates can be patterned.

Abstract: A semiconductor device includes a support body, a first substrate provided on a surface at one side of the support body, a second substrate provided on a surface at the other side of the support body, and a semiconductor chip provided on the first substrate exposed to an opening part piercing the support body and the second substrate. The first substrate includes a first dielectric layer and a wiring layer, a plurality of first electrodes connected to the semiconductor chip which first electrodes are provided on a first surface of the first substrate exposed to an inside of the opening part, and the second substrate includes a second dielectric layer made of a material substantially the same as the first dielectric layer.

Abstract: A multi-chip module has at least two semiconductor chips. Each of the semiconductor chips has chip electrodes of the semiconductor chip, electrically conductive interconnections for electrically connection with the chip electrodes, electrically conductive lands for electrically connection with the interconnections, external terminals placed on the lands, and a stress-relaxation layer intervening between the lands and the semiconductor chip. The semiconductor chips are placed on a mounting board via the external terminals. The distance between farthest ones of external terminal positioned at an outermost end portions of said second semiconductor chip is smaller than that of the first semiconductor chip.