Abstract: A donor substrate includes a base layer, a light to heat conversion layer on the base layer, an interlayer on the light to heat conversion layer, a low molecular weight transfer layer on the interlayer and an organic transfer layer on the low molecular weight transfer layer. The low molecular weight transfer layer includes an element in Group I or a compound of elements in Group I and Group VII.

Abstract: A vertical thin-film transistor structure includes a substrate, a source electrode, an insulation layer, a drain electrode, two first channel layers, a gate insulation layer and a gate electrode, which are stacked upward in that order on the substrate. The first channel layers are respectively disposed at two opposite ends of the drain electrode, and extend from the upper surface of the drain electrode to the upper surface of the source electrode respectively. Each of the first channel layers contacts the source electrode and the drain electrode. The gate insulation layer is disposed on the source electrode, the first channel layers and the drain electrode. The gate electrode is disposed on the gate insulation layer and covers the first channel layers. Therefore, the volume of the conventional thin-film transistor structure shrinks, and the ratio of the volume of the conventional thin-film transistor structure to that of a pixel structure decreases.

Abstract: A light emitting device which is capable of suppressing deterioration by diffusion of impurities such as moisture, oxygen, alkaline metal and alkaline earth metal, and concretely, a flexible light emitting device which has light emitting element formed on a plastic substrate. On the plastic substrate, disposed are two layers and more of barrier films comprising a layer represented by AlNxOy which is capable of blocking intrusion of moisture and oxygen in a light emitting layer and blocking intrusion of impurities such as an alkaline metal and an alkaline earth metal in an active layer of TFT, and further, a stress relaxation film containing resin is disposed between two layers of barrier films.

Abstract: A metal organic chemical vapor deposition apparatus includes reaction chambers in which nitride layers is deposited on a substrate using a group III-V material, a buffer chamber connected to the reaction chambers and in which a transfer robot is disposed to transfer the substrate into the reaction chambers, a gas supply device configured to selectively supply one or more of hydrogen, nitrogen, and ammonia gases into the buffer chamber so that when the buffer chamber communicates with one of the reaction chambers, the buffer chamber has the same atmosphere as an atmosphere of the reaction chamber, and a heater disposed in the buffer chamber. Nitride layers are deposited on a substrate in the reaction chambers, and the temperature and gas atmosphere of the buffer chamber are adjusted such that when the substrate is transferred, epitaxial layers formed on the substrate can be stably maintained.

Abstract: An electrically conductive composite material that includes an electrically conductive polymer, and at least one metal nanoparticle coated with a protective agent, wherein said protective agent includes a compound having a first part that has at least part of the molecular backbone of said electrically conductive polymer and a second part that interacts with said at least one metal nanoparticle.

Abstract: A light emitting device which is capable of suppressing deterioration by diffusion of impurities such as moisture, oxygen, alkaline metal and alkaline earth metal, and concretely, a flexible light emitting device which has light emitting element formed on a plastic substrate. On the plastic substrate, disposed are two layers and more of barrier films comprising a layer represented by AlNxOy which is capable of blocking intrusion of moisture and oxygen in a light emitting layer and blocking intrusion of impurities such as an alkaline metal and an alkaline earth metal in an active layer of TFT, and further, a stress relaxation film containing resin is disposed between two layers of barrier films.

Abstract: An electrically conductive composite material that includes an electrically conductive polymer, and at least one metal nanoparticle coated with a protective agent, wherein said protective agent includes a compound having a first part that has at least part of the molecular backbone of said electrically conductive polymer and a second part that interacts with said at least one metal nanoparticle.

Abstract: In the present invention, disclosed is a method of manufacturing an organic electroluminescent element in which at least an anode, a light emission layer and a cathode are laminated, wherein at least one light emission layer possesses two kinds of light-emitting dopants, the method comprising the step of conducting a process in which the organic EL element is subjected to an annealing treatment after forming at least the anode, the at least one light emission layer and the cathode as an element structure. By the method of the present invention, a stably manufacturable organic electroluminescent element exhibiting high light emission efficiency and long lifetime is possible to be prepared, and a white light-emitting organic electroluminescent element is suitably prepared.

Abstract: An organic semiconductor device for detecting and measuring radiation has a total active area of less than 100 square microns (?m2) and comprises at least two bulk organic semiconductor regions with each region connected on one side to an independent biasing voltage electrode and connected on an opposing side to a common output electrode.

Abstract: An organic EL device is provided with a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer and an electron injection layer between an anode and a cathode, wherein the hole injection layer is obtained by doping a hole transport material with an electron-accepting impurity, and the ionization potential Ip(HIL) of the material of the hole injection layer that composes the hole injection layer (also referred to as a hole injection material in the present description), the ionization potential Ip(HTL) of the hole transport material, and the ionization potential Ip(EML) of the material of the light-emitting layer (also referred to as a light-emitting layer material in the present description) respectively satisfy the relationship of Ip(EML)>Ip(HTL)?Ip(HIL)?Ip(EML)?0.4 eV.

Abstract: Disclosed herein are an organic memory device and a method for fabricating the device. The organic memory device may include a first electrode, a second electrode and an organic active layer wherein the organic active layer includes an upper organic material layer formed of an electrically conductive organic material containing heteroatoms and a lower organic material layer formed of an electrically non-conductive organic material containing heteroatoms. Because the organic memory device exhibits improved thermal stability and non-volatility, it may be well suited for use in nonvolatile large-capacity storage units. Flexible electrodes may be used in the organic memory device to fabricate flexible memory devices.

Abstract: A semiconductor device having semiconductor elements disposed with higher density and a method for manufacturing the same are provided. An image display device employing the semiconductor device is also provided. A semiconductor device comprises a resin film having a through hole; and a semiconductor element comprising a gate electrode disposed on the inner wall of the through hole, an insulating layer that covers the gate electrode within the through hole, an organic semiconductor disposed on the insulating layer within the through hole, and a source electrode and a drain electrode which are electrically connected to the organic semiconductor.

Abstract: The present invention relates to an organic electronic device including a first electrode, a second electrode and a first organic layer interposed between the first electrode and the second electrode, wherein the first organic layer comprises at least one metal organic compound and at least one metal oxide. The present invention further relates to an apparatus comprising the organic electronic device according to the present invention.

Abstract: An organic photosensitive optoelectronic device is formed in which the organic photoconductive materials are encapsulated by an electrode of the device. A first transparent film is provided that comprises a first electrically conductive material, arranged on a transparent substrate. A first photoconductive organic material is deposited over the first electrically conductive material. A metal is deposited at an initial rate of no more than 1 nm/s over the first photoconductive organic material, completely covering any exposed portions of the first photoconductive organic material and any exposed interfaces with the first photoconductive organic material to a thickness of no less than 10 nm.

Abstract: Provided are an organic light emitting display device coupled to a photoelectric transistor. The organic light emitting display device includes an anode and a cathode separated from each other, a plurality of organic material layers formed between the anode and the cathode and including an organic light emitting layer, a light source applying an excitation pulse to the organic material layers, and a light receiving unit measuring changes in photoluminescence (PL) signals that are emitted from the organic material layers.

Abstract: The present invention provides a memory device and a semiconductor device which have high reliability for writing at low cost. Furthermore, the present invention provides a memory device and a semiconductor device having a non-volatile memory element in which data can be additionally written and which can prevent forgery due to rewriting and the like. The memory element includes a first conductive layer, a second conductive layer, and an organic compound layer, which is formed between the first conductive layer and the second conductive layer, and which has a photosensitized oxidation reduction agent which can be an excited state by recombination energy of electrons and holes and a substance which can react with the photosensitized oxidation reduction agent.

Abstract: A method for manufacturing a gel electrolyte pattern is disclosed, the method comprising depositing an electrolyte precursor by inkjet printing onto a gelling agent layer. A gel electrolyte pattern is also disclosed, the gel electrolyte pattern comprising either a mixture of a gelling agent and an electrolyte precursor or the products of a chemical reaction between a gelling agent and an electrolyte precursor.

Abstract: An image sensor element is provided according to an embodiment which comprises image sensor element portions sensitive to at least partially different wavelength ranges.

Abstract: A photovoltaic cell which comprises a first electrode, a second electrode, a photoactive, charge-separating layer comprising a semiconducting polymer between the first and the second electrodes, and a passivatng layer adapted to enhance the lifetime of the photovoltaic cell. The passivating layer comprises a substantially amorphous titanium oxide having the formula of TiOx where x represents a number from 1 to 1.96.

Abstract: Top-gate, bottom-contact organic thin film transistors are provided. The transistors may include metal bilayer electrodes to aid in charge movement within the device. In an embodiment, an organic transistor includes a drain electrode and a source electrode disposed over a first region of a substrate, a transition metal oxide layer disposed over and in direct physical contact with the drain electrode and the source electrode, an organic preferentially hole conducting channel layer disposed over the metal oxide and between the drain electrode and the source electrode, and a gate electrode disposed over the channel.

Abstract: An object is to increase resistance against an electrostatic breakdown and to increase resistance to an external stress. Another object is to reduce cost by simplifying the manufacturing process. In a step in which an element formation layer is provided between a first organic resin layer provided with a first conductive film on its surface and a second organic resin layer provided with a second conductive film on its surface to electrically connect the first conductive film and the second conductive film with a contact conductor formed in each of the organic resin layers, the contact conductor provided in each of the first organic resin layer and the second organic resin layer is manufactured by making paste penetrate before an organic resin is cured and then curing the organic resin layer.

Abstract: Electronic devices with hybrid high-k dielectric and fabrication methods thereof. The electronic device includes a substrate. A first electrode is disposed on the substrate. Hybrid high-k multi-layers comprising a first dielectric layer and a second dielectric layer are disposed on the substrate, wherein the first dielectric layer and the second dielectric layer are solvable and substantially without interface therebetween. A second electrode is formed on the hybrid multi-layers.

Abstract: An organic thin film transistor substrate includes a gate line formed on a substrate, a data line intersecting the gate line and defining a subpixel area, an organic thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode, and an organic semiconductor layer forming a channel between the source and drain electrodes, a passivation layer parallel with the gate line, for covering the organic semiconductor layer and peripheral regions of the organic semiconductor layer, and a bank insulating layer for determining the position of the organic semiconductor layer and the passivation layer.

Abstract: The present invention provides an involatile memory device that is capable of data writing and erasing at a time other than during manufacturing, and a semiconductor device having the memory device. Also, the present invention provides a compact-sized and inexpensive involatile memory device and a semiconductor device having the memory device. A memory device of the present invention includes a first conductive layer and a second conductive layer of which at least one has a light transmitting property, and an organic compound layer that is in contact with the first conductive layer or the second conductive layer. The organic compound layer includes conductive particles that are dispersed within the layer, and the organic compound included in the organic compound layer has a site that can photoisomerize.

Abstract: The present invention generally relates to organic photosensitive optoelectronic devices. More specifically, it is directed to organic photovoltaic devices, e.g., organic solar cells. More specifically, it is directed to organic photosensitive optoelectronic devices that comprise a cyclometallated organometallic compound as a light absorbing material.

Abstract: Provided is a CMOS image sensor that uses thiophene derivatives. The CMOS image sensor includes first through third photoelectric conversion units vertically and sequentially stacked on a semiconductor substrate. The first photoelectric conversion unit detects blue light and comprises a first electrode, a second electrode, and a p-type thiophene derivative layer between the first electrode and the second electrode.

Abstract: An electronic device including in any sequence: (a) a semiconductor layer; and (b) a phase-separated dielectric structure comprising a lower-k dielectric polymer and a higher-k dielectric polymer, wherein the lower-k dielectric polymer is in a higher concentration than the higher-k dielectric polymer in a region of the dielectric structure closest to the semiconductor layer.

Abstract: An organic photosensitive optoelectronic device having a plurality of cells disposed between a first electrode and a second electrode. Each cell includes a photoconductive organic hole transport layer adjacent to a photoconductive organic electron transport layer. A metal or metal substitute is disposed between each of the cells. At least one exciton blocking layer is disposed between the first electrode and the second electrode.

Abstract: An organic photosensitive optoelectronic device having a plurality of cells disposed between a first electrode and a second electrode. Each cell includes a photoconductive organic hole transport layer adjacent to a photoconductive organic electron transport layer. A metal or metal substitute is disposed between each of the cells. At least one exciton blocking layer is disposed between the first electrode and the second electrode.

Abstract: Organic photosensitive optoelectronic devices (“OPODs”) are disclosed which include an exciton blocking layer to enhance device efficiency. Single heterostructure, stacked and wave-guide type embodiments are disclosed. Photodetector OPODs having multilayer structures and an exciton blocking layer are also disclosed. Guidelines for selection of exciton blocking layers are provided.