Abstract: An organic light-emitting diode includes a substrate, a first electrode on the substrate, a second electrode facing the first electrode, an emission layer interposed between the first electrode and the second electrode, a hole transportation region between the first electrode and the emission layer, and an electron transportation region interposed between the emission layer and the second electrode. The hole transportation region includes a first compound represented by Formula 1 below, and at least one of the hole transportation region and the emission layer includes a second compound represented by Formula 100 below: wherein Ar101, Ar102, xa, xb, R101-R119, Ar50, Ar60, R51-R60 and p are further defined.

Abstract: The present invention is related to a process for reducing surface energy of a hole transport layer. The disclosed process comprises providing a hole transport layer; and providing a fluorine-containing layer directly on said hole transport layer. The configuration of said fluorine-containing layer reduces the structural disorder of an active layer and is able to recover a moisture-degraded hole transport layer, and thereby improves the performance of an electric device containing the same.

Abstract: A thin film transistor comprising at least three terminals consisting of a gate electrode, a source electrode and a drain electrode; an insulator layer and an organic semiconductor layer on a substrate, which controls its electric current flowing between the source and the drain by applying a electric voltage across the gate electrode, wherein the organic semiconductor layer comprises a styryl derivative having a styryl structure expressed by C6H5—CH?CH—C6H5, or a distyryl structure expressed by C6H5—CH?CH—C6H5—CH?CH—C6H5 each without molecular weight distribution. The transistor has a fast response speed (driving speed), and further, achieves a large On/Off ratio getting an enhanced performance as a transistor.

Abstract: Disclosed are a composition comprising an organic insulating polymer in which a photo-reactive functional group showing an increased crosslinking degree is introduced into a side-chain, an organic insulating film comprising the composition, an organic thin film transistor (OTFT) comprising the organic insulating film, an electronic device comprising the organic thin film transistor and methods of fabricating the organic insulating film, the organic thin film transistor and the electronic device. The OTFT comprising the organic insulating film of example embodiments may not show any hysteresis during the driving of the OTFT, and therefore, may exhibit a homogeneous property.

Abstract: Provided is an insulating layer that can improve device characteristics of an electronic device including the insulating layer. The insulating layer contains a polymer insulating substance having repeating units represented by the following formula: wherein Ra represents a direct bond or any linking group, Ar represents a divalent aromatic group optionally having a substituent, and Rb represents a hydrogen atom, a fluorine atom, or a univalent organic group.

Abstract: Provided are a conducting polymer composition and an electronic device including a layer formed using the conducting polymer composition. The conducting polymer composition contains: at least one compound selected from the group consisting of a siloxane compound of formula (1) below, a siloxane compound of formula (2) below, and a silane compound of formula (3) below; and a conducting polymer: where R1, R2, X1, X2, X3, X4, X5, X6, X7, X8, X9, X10, X11, X12, X13, X14, X15, X16, X17, X18, X19, X20, D, p, m, q, and r are the same as described in the detailed description of the invention. The electronic device including a layer formed using the conducting polymer composition has excellent electroluminescent characteristics and long lifetime.

Abstract: Disclosed is a method for fabricating an organic thin film transistor by oxidation and selective reduction of an organic semiconductor material. According to the method, stability of interfaces between a semiconductor layer and source/drain electrodes of an organic thin film transistor may be guaranteed. Therefore, an organic thin film transistor fabricated by the method may exhibit improved performance characteristics, e.g., minimized or decreased contact resistance and increased charge carrier mobility.

Abstract: An organic memory device and a method for fabricating the memory device are provided. The organic memory device may include a first electrode, a second electrode, and an ion transfer layer between the first electrode and the second electrode. The organic memory device may have lower operating voltage and current, and may be fabricated at lower costs.

Abstract: The organic TFT includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer insulating the gate electrode from the source and drain electrodes and the organic semiconductor layer; and a self-assembly monolayer (SAM) included between the insulating layer and the organic semiconductor layer. A compound forming the SAM has at least one terminal group selected from the group consisting of an unsubstituted or substituted C6-C30 aryl group and an unsubstituted or substituted C2-C30 heteroaryl group. The organic TFT is formed by forming the above-described layers and forming the SAM on the insulating layer before the organic semiconductor layer and source and drain electrodes are formed.

Abstract: A method for making a thin film transistor, the method comprising the steps of: providing a growing substrate; applying a catalyst layer on the growing substrate; heating the growing substrate with the catalyst layer in a furnace with a protective gas therein, supplying a carbon source gas and a carrier gas at a ratio ranging from 100:1 to 100:10, and growing a carbon nanotube layer on the growing substrate; forming a source electrode, a drain electrode, and a gate electrode; and covering the carbon nanotube layer with an insulating layer, wherein the source electrode and the drain electrode are electrically connected to the single-walled carbon nanotube layer, the gate electrode is opposite to and electrically insulated from the single-walled carbon nanotube layer.

Abstract: Example embodiments pertain to an organic semiconductor composition, in which low-molecular-weight oligomer compounds are distributed in the spaces of a polymer compound so that the free spaces of the organic semiconductor polymer compound are filled with the low-molecular-weight oligomer compounds upon the formation of an organic semiconductor thin film, thereby increasing ?-? stacking effects, and to an organic semiconductor thin film using the same and an organic electronic device employing the thin film. Using the organic semiconductor composition according to example embodiments, a semiconductor thin film and an organic electronic device having improved electrical properties may be manufactured.

Abstract: The invention provides a nanowire light emitting device and a manufacturing method thereof. In the light emitting device, first and second conductivity type clad layers are formed and an active layer is interposed therebetween. At least one of the first and second conductivity type clad layers and the active layer is a semiconductor nanowire layer obtained by preparing a layer of a mixture composed of a semiconductor nanowire and an organic binder and removing the organic binder therefrom.

Abstract: The maximum luminous efficiency of organic light-emitting materials is increased through spin-dependent processing. The technique is applicable to all electro-luminescent processes in which light is produced by singlet exciton decay, and all devices which use such effects, including LEDs, super-radiant devices, amplified stimulated emission devices, lasers, other optical microcavity devices, electrically pumped optical amplifiers, and phosphorescence (Ph) based light emitting devices. In preferred embodiments, the emissive material is doped with an impurity, or otherwise modified, to increase the spin-lattice relaxation rate (i.e., decrease the spin-lattice time), and hence raise the efficiency of the device. The material may be a polymer, oligomer, small molecule, single crystal, molecular crystal, or fullerene. The impurity is preferably a magnetic or paramagnetic substance.

Abstract: A method for partially coating a structure having one or more small protruding features is provided. The method includes: (a) providing a structure comprising a base and a protruding feature attached to the base of the structure, the feature having a diameter or width of about 1 mm or less; (b) contacting the protruding feature with a substantially uniform layer of viscous coating material, the layer having a pre-determined thickness, to transfer at least some of the coating material from the layer of coating material to the protruding feature, without contacting the base of the structure with the layer of viscous coating material; and (c) separating the structure from the layer of coating material to form a substantially uniformly coated protruding feature, wherein the coating occupies a desired pre-determined area on the feature.

Abstract: The present invention provides a light-emitting element including an electron-transporting layer and a hole-transporting layer between a first electrode and a second electrode; and a first layer and a second layer between the electron-transporting layer and the hole-transporting layer, wherein the first layer includes a first organic compound and an organic compound having a hole-transporting property, the second layer includes a second organic compound and an organic compound having an electron-transporting property, the first layer is formed in contact with the first electrode side of the second layer, the first organic compound and the second organic compound are the same compound, and a voltage is applied to the first electrode and the second electrode, so that both of the first organic compound and the second organic compound emit light.

Abstract: The invention provides low molecular weight or polymeric organic materials in which at least one hydrogen atom is replaced by a group of the formula (A) where R is alkyl group, alkoxyalkyl group, alkoxy group, thioalkoxy group, aryl group or alkenyl group, in each of which one or more hydrogen atoms may be replaced and one or more nonadjacent carbon atoms may be replaced. Z is —O—, —S—, —CO—, —COO—, —O—CO— or a bivalent group —(CR1R2)n— in which R1 and R2 are hydrogen, alkyl, alkoxy, alkoxyalkyl or thioalkoxy group, aryl or alkenyl, in each of which one or more hydrogen atoms may be replaced and one or more nonadjacent carbon atoms may be replaced, and n is an integer from 1 to 20. X is a bivalent group —(CR1R2)n— and, with the proviso that the number of these A groups is limited by the maximum number of available substitutable hydrogen atoms.

Abstract: A thin film transistor comprising at least three terminals consisting of a gate electrode, a source electrode and a drain electrode; an insulator layer and an organic semiconductor layer on a substrate, which controls its electric current flowing between the source and the drain by applying a electric voltage across the gate electrode, wherein the organic semiconductor layer comprises a styryl derivative having a styryl structure expressed by C6H5—CH?CH—C6H5, or a distyryl structure expressed by C6H5—CH?CH—C6H5—CH?CH—C6H5 each without molecular weight distribution. The transistor has a fast response speed (driving speed), and further, achieves a large On/Off ratio getting an enhanced performance as a transistor.

Abstract: Disclosed is a method of manufacturing a thin film transistor, in which a semiconductor layer and a gate insulating film may be formed through ink jet printing using a single bank, thereby simplifying the manufacturing process and decreasing the manufacturing cost, leading to more economical thin film transistors. The thin film transistor manufactured using the method of example embodiments may be used as a switching element for sensors, memory devices, optical devices, and active matrix flat panel displays.

Abstract: Aryl-substituted poly-p-arylenevinylenes comprising a repeating unit of the formula (C1), in which one or more of the unsubstituted aromatic carbon atoms may be replaced by nitrogen atoms, —OCm and —OCn are alkoxy groups, m and n are integers from 2 to 6 with m+n=8, p is 0, 1, 2 or 3 and in which R is CN, Cl, F, CF3, NO2, or SO3Z wherein Z is a monovalent cation such as Na+, or in which R is —XR1 wherein the unit —X— represents a single bond, —O—, —S—, —CO—, —COO—, —OCO—, —SO—, —SO2—, —N(R2)— or —N(R2)CO—, and wherein R1 and R2 are the same or different and constitute a straight-chain branched or cyclic C1-C20 alkyl group or together an C1-C20 alkylene group, in which C1-C20 alkyl or C1-C20 alkylene group one or more hydrogens are optionally substituted by F or a C4-C12 aryl group and/or one or more non-adjacent —CH2— units are optionally substituted by C4-C12 arylene, —O—, —S—, —CO—, —COO—, —OCO—, —SO—, —SO2—, —N(R3)— or —N(R3)CO— where R3 is C1-C20 alkyl, or in which R is a C4-C12 aryl group which may o

Abstract: A light-emitting compound that can be easily applied to vacuum vapor deposition and exhibit long wavelength light is disclosed. Further, a light-emitting element without inferior luminescence properties due to the carbonization of a light-emitting compound during vapor deposition; and a light-emitting device that is composed of the light-emitting elements are also disclosed. A pyran derivative is represented by the following general formula 1: wherein R1 is a hydrogen element or an alkoxy group.

Abstract: A thin-film transistor, a thin-film transistor sheet, an electric circuit, and a manufacturing method thereof are disclosed, the method comprising the steps of forming a semiconductor layer by providing a semiconductive material on a substrate, b) forming an isolating area, which is electrode material-repellent, by providing an electrode material-repellent material on the substrate, and c) forming a source electrode on one end of the insulating area and a drain electrode on the other end of the insulating area, by providing an electrode material.

Abstract: Conventional light-emitting elements, in particular an organic electroluminescence devices, involve problems resulting from a low light extraction efficiency of 20% or less, because of limitations on light emission set by total reflection angle on an organic layer or transparent electrode as the component, and are demanded to have improved luminance and other optical characteristics which depend on viewing angle. The present invention provides an organic electroluminescence device which can improve a light extraction efficiency and thereby reduce operational current and power consumption by incorporating a laminate of optical thin films of low refractive index and having pores whose size is controlled at a level equivalent to or shorter than visible wavelengths, because the light components totally reflected to become wave-guided or reflected light in a common device can be extracted as light scattered by the pores.

Abstract: Disclosed are a composition comprising an organic insulating polymer in which a photo-reactive functional group showing an increased crosslinking degree is introduced into a side-chain, an organic insulating film comprising the composition, an organic thin film transistor (OTFT) comprising the organic insulating film, an electronic device comprising the organic thin film transistor and methods of fabricating the organic insulating film, the organic thin film transistor and the electronic device. The OTFT comprising the organic insulating film of example embodiments may not show any hysteresis during the driving of the OTFT, and therefore, may exhibit a homogeneous property.

Abstract: An organic memory device and a method for fabricating the memory device are provided. The organic memory device may include a first electrode, a second electrode, and an ion transfer layer between the first electrode and the second electrode. The organic memory device may have lower operating voltage and current, and may be fabricated at lower costs.

Abstract: The present invention relates to an organic electroluminescent device with a light-emitting layer, the light-emitting layer comprising a photo-crosslinkable conductive polymeric host material suitable for facilitating full-color display by spin coating; and at least one small-molecule light-emitting material to achieve high power efficiency. The color-purity of device of the present invention is independent of the distribution of molecular weight of the polymer in the light-emitting layer.

Abstract: Described herein is an organic opto-electronic device comprising a cathode comprising at least one zero-valent metal; an anode; an opto-electronically active organic material; wherein said cathode is in contact with at least one organic phosphonium salt. In certain embodiments, the organic phosphonium salt has structure (I) wherein R1-R4 are independently at each occurrence a C1-C20 aliphatic radical, a C3-C20 cycloaliphatic radical, or a C3-C20 aromatic radical is disclosed and wherein X? is selected from the group consisting of monovalent inorganic anions, monovalent organic anions, polyvalent inorganic anions, polyvalent organic anions, and mixtures thereof.

Abstract: A naphthylanthracene-based polymer comprising a repeating unit of the formula wherein: Ar is an aryl or substituted aryl of from 6 to 60 carbon atoms; or a heteroaryl or substituted heteroaryl of from 4 to 60 carbon atoms; R1, R2, and R3 are the same or different, and are each individually hydrogen, or alkyl, or alkenyl, or alkynyl, or alkoxy, or amino, or thioalkyl, or carboxyl, or carbonyl, wherein the alkyl, alkenyl, alkynyl, alkoxy, amino, thioalkyl, carboxy, or carbonyl can have from 1 to 40 carbon atoms; or aryl of from 6 to 60 carbon atoms; or heteroaryl of from 4 to 60 carbon atoms; or F, or Cl , or Br; or a cyano group; or a nitro group, or a sulfonate group; and L is a direct bond between naphthylanthracene and polymer backbone or a carbon linking group having 1 to 40 carbon atoms or a non-carbon linking group.

Abstract: The invention relates to an electroluminescent composition comprising an electroluminescent material containing an aryl vinylene and an additive for suppressing a drop in the initial efficiency of light emission observed when the electroluminescent material is used as such in an electroluminescent device. The invention further relates to an electroluminescent composition comprising an electroluminescent material containing an aryl vinylene and an additive, wherein the additive comprises an oligo ring structure with at least four carbonyl groups and to an electroluminescent device comprising the composition according to the invention.

Abstract: Generally, and in one form, the present invention is a composition of light-emitting block copolymer. In another form, the present invention is a process producing a light-emitting block copolymers that intends polymerizing a first di(halo-methyl) aromatic monomer compound in the presence of an anionic initiator and a base to form a polymer and contacting a second di(halo-methyl) aromatic monomer compound with the polymer to form a homopolymer or block copolymer wherein the block copolymer is a diblock, triblock, or star polymer. In yet another form, the present invention is an electroluminescent device comprising a light-emitting block copolymer, wherein the electroluminescent device is to be used in the manufacturing of optical and electrical devices.

Abstract: In an organic EL element, an organic EL layer is interposed between anodes and cathodes formed on a substrate. Each of the cathodes is made of a first conductive film that comes into contact with the organic EL layer and a second conductive film that constitutes a laminated structure together with the first conductive film. The first conductive film contains any one of an alkaline metal and an alkaline earth metal. The second conductive film contains any one of at least one type metal selected from a group consisting of Ru (ruthenium), Rh (rhodium), Ir (iridium), Os (osmium) and Re (rhenium) and its oxide.

Abstract: The present invention describes poly(arylenevinylenes) comprising poly(arylphenylenevinylene) units whose phenylene unit bears a further aryl substituent in the para or meta position relative to the first aryl radical (formula (I)), as a result of which the operating life in EL elements can be increased and high EL efficiencies can be maintained.