Abstract: Provided are a light-emitting element in which a driving voltage increase can be suppressed and a light-emitting device which has reduced power consumption by including the light-emitting element. The element includes an EL layer between an anode and a cathode, and has a first, a second, and a third layer between the cathode and the EL layer. The first layer is between and in contact with the cathode and the second layer and includes a hole-transport substance. The second layer is between and in contact with the first the third layers and includes a phthalocyanine-based material. The third layer is between and in contact with the second and EL layers and includes an alkali metal, an alkaline-earth metal, a rare-earth metal, an alkali metal compound, an alkaline-earth metal compound, or a rare-earth metal compound. The phthalocyanine-based material has a metal-oxygen bond.

Abstract: A light-emitting element includes an EL layer between an anode and a cathode, and a first layer, a second layer, and a third layer between the cathode and the EL layer. The first layer provided between the cathode and the second layer is in contact with the cathode and the second layer, and includes a substance having a hole-transport property and an acceptor substance. The second layer provided between the first layer and the third layer is in contact with the first layer and the third layer, and includes a phthalocyanine-based material. The third layer provided between the second layer and the EL layer is in contact with the second layer and the EL layer, and includes an alkali metal, an alkaline-earth metal, a rare-earth metal, an alkali metal compound, an alkaline-earth metal compound, or a rare-earth metal compound.

Abstract: It is an object of the present invention to provide a light emitting element that realizes a high contrast. It is another object of the present invention to provide a light emitting device that realizes a high contrast by using the light emitting element with an excellent contrast. The light emitting element has a layer containing a light emitting substance interposed between a first electrode and a second electrode, and the layer containing the light emitting substance includes a light emitting layer, a layer containing a first organic compound, and a layer containing a second organic compound. The first electrode has a light-transmitting property, and the layer containing the first organic compound and the layer containing the second organic compound are interposed between the second electrode and the light emitting layer. Furthermore, color of the first organic compound and color of the second organic compound are complementary.

Abstract: In the present invention, a light-emitting element operating at low driving voltage, consuming low power, emitting light with good color purity and manufactured in high yields can be obtained. A light-emitting element is disclosed with a configuration composed of a fist layer containing a light-emitting material, a second layer, a third layer are formed sequentially over an anode to be interposed between the anode and a cathode in such a way that the third layer is formed to be in contact with the cathode. The second layer is made from n-type semiconductor, a mixture including that, or a mixture of an organic compound having a carrier transporting property and a material having a high electron donor property. The third layer is made from p-type semiconductor, a mixture including that, or a mixture of an organic compound having a carrier transporting property and a material having a high electron acceptor property.

Abstract: A light emitting element with a high contrast is realized. A light emitting device with a high contrast is achieved by using the light emitting element with an excellent contrast. The light emitting element has a layer containing a light emitting substance interposed between a first electrode and a second electrode, and the layer containing the light emitting substance includes a light emitting layer, a layer containing a first organic compound, and a layer containing a second organic compound. The first electrode has a light-transmitting property, and the layer containing the first organic compound and the layer containing the second organic compound are interposed between the second electrode and the light emitting layer. Furthermore, color of the first organic compound and color of the second organic compound are complementary.

Abstract: A static induction light emitting transistor comprising: on a substrate: a source electrode; a hole transporting layer in which a slit-shaped gate electrode is embedded; an equipotential layer; light emitting layer; and a transparent or semitransparent drain electrode, provided in this order. In this light emitting transistor, the drain electrode provided on the opposite side of the gate electrode, viewing from the light emitting layer, is transparent or semitransparent.

Abstract: A main object of the present invention is to provide a static induction light emitting transistor having an organic EL element structure and a vertical FET structure which is possible to avoid a problem of the shielding of light and a problem of shielding of electric field by a gate electrode. The above object is achieved by providing a light emitting transistor 11 of a vertical FET structure comprising: on a substrate 12; a source electrode 13; a hole transporting layer 14 in which a slit-shaped gate electrode 15 is embedded; an equipotential layer 16; light emitting layer 17; and a transparent or semitransparent drain electrode 18, provided in this order. In this light emitting transistor, the drain electrode 18 provided on the opposite side of the gate electrode 15, viewing from the light emitting layer 17, is transparent or semitransparent. Therefore, light generated in the light emitting layer 17 can be taken out from the drain electrode side.

Abstract: An organic photosensitive optoelectronic device includes an anode, a cathode, and a donor-acceptor heterojunction between the anode and the cathode, the heterojunction including a donor-like material and an acceptor-like material, wherein at least one of the donor-like material and the acceptor-like material includes a subphthalocyanine, a subporphyrin, and/or a subporphyrazine compound, wherein the subporphyrin or subporphyrazine compound includes boron.

Abstract: A photovoltaic device is disclosed. The photovoltaic device includes a substrate, an anode, a cathode, two semiconducting layers, and an electron transporting layer. The first semiconducting layer comprises a first metallophthalocyanine. The second semiconducting layer includes a blend of a second metallophthalocyanine with an electron acceptor. The second semiconducting layer is located between the first semiconducting layer and the electron transporting layer. The first and second metallophthalocyanines have different valences. The complementary absorption profiles of these layers result in a device having greater absorption and efficiency than expected, without the need for a recombination layer or the need to match current between layers.

Abstract: A light emitting element with a high contrast is realized. A light emitting device with a high contrast is achieved by using the light emitting element with an excellent contrast. The light emitting element has a layer containing a light emitting substance interposed between a first electrode and a second electrode, and the layer containing the light emitting substance includes a light emitting layer, a layer containing a first organic compound, and a layer containing a second organic compound. The first electrode has a light-transmitting property, and the layer containing the first organic compound and the layer containing the second organic compound are interposed between the second electrode and the light emitting layer. Furthermore, color of the first organic compound and color of the second organic compound are complementary.

Abstract: A light-emitting element that emits light with high luminance and can be driven at low voltage. The light-emitting element includes n (n is a natural number greater than or equal to 2) EL layers between an anode and a cathode, and includes a first layer, a second layer, and a third layer between an m-th (m is a natural number, 1?m?n?1) EL layer from the anode and an (m+1)th EL layer. The first layer functions as a charge-generation region, has hole-transport properties, and contains an acceptor substance. The third layer has electron-transport properties and contains an alkali metal or the like. The second layer is formed of a phthalocyanine-based material and is provided between the first layer and the third layer, whereby an injection barrier at the time of injecting electrons generated in the first layer into the m-th EL layer through the third layer can be lowered.

Abstract: Provided are a light-emitting element in which a driving voltage increase can be suppressed and a light-emitting device which has reduced power consumption by including the light-emitting element. The element includes an EL layer between an anode and a cathode, and has a first, a second, and a third layer between the cathode and the EL layer. The first layer is between and in contact with the cathode and the second layer and includes a hole-transport substance. The second layer is between and in contact with the first the third layers and includes a phthalocyanine-based material. The third layer is between and in contact with the second and EL layers and includes an alkali metal, an alkaline-earth metal, a rare-earth metal, an alkali metal compound, an alkaline-earth metal compound, or a rare-earth metal compound. The phthalocyanine-based material has a metal-oxygen bond.

Abstract: A light-emitting element includes an EL layer between an anode and a cathode, and a first layer, a second layer, and a third layer between the cathode and the EL layer. The first layer provided between the cathode and the second layer is in contact with the cathode and the second layer, and includes a substance having a hole-transport property and an acceptor substance. The second layer provided between the first layer and the third layer is in contact with the first layer and the third layer, and includes a phthalocyanine-based material. The third layer provided between the second layer and the EL layer is in contact with the second layer and the EL layer, and includes an alkali metal, an alkaline-earth metal, a rare-earth metal, an alkali metal compound, an alkaline-earth metal compound, or a rare-earth metal compound.

Abstract: A composition is described comprising a mixture of at least two different dendrimers A and B which possess the same core and the same repeating unit or units in the dendrons. Either the generation of at least one of said dendrons in one of said dendrimers (A) is different from the generation of at least one of the dendrons in the other of said dendrimers (B), or the number of dendrons in one of said dendrimers, or both, is different from the number of dendrons in the other of said dendrimers, or both.

Abstract: An organic photosensitive optoelectronic device, having a donor-acceptor heterojunction of a donor-like material and an acceptor-like material and methods of making such devices is provided. At least one of the donor-like material and the acceptor-like material includes a subphthalocyanine, a subporphyrin, and/or a subporphyrazine compound; and/or the device optionally has at least one of a blocking layer or a charge transport layer, where the blocking layer and/or the charge transport layer includes a subphthalocyanine, a subporphyrin, and/or a subporphyrazine compound.

Abstract: An optoelectronic device and a method for fabricating the optoelectronic device includes a first electrode disposed on a substrate, an exposed surface of the first electrode having a root mean square roughness of at least 30 nm and a height variation of at least 200 nm, the first electrode being transparent. A conformal layer of a first organic semiconductor material is deposited onto the first electrode by organic vapor phase deposition, the first organic semiconductor material being a small molecule material. A layer of a second organic semiconductor material is deposited over the conformal layer. At least some of the layer of the second organic semiconductor material directly contacts the conformal layer. A second electrode is deposited over the layer of the second organic semiconductor material. The first organic semiconductor material is of a donor-type or an acceptor-type relative to the second organic semiconductor material, which is of the other material type.

Abstract: A method for forming a thin film electrode for an organic thin film transistor of the invention provides a multi-layer mask on a substrate with an electrode area opening in a top layer of the mask that is undercut by openings in other layers of the mask. A thin film of metal is deposited in the electrode area on the substrate. Removing the multi-layer mask leaves a well-formed thin film electrode with naturally tapered edges. A preferred embodiment of the invention is a method for forming a thin film electrode for an organic thin film transistor. The method includes depositing a first layer of photoresist on a substrate. The photoresist of the first layer has a first etching rate. A second layer of photoresist is deposited on the first layer of photoresist. The photoresist of the second layer has a second etching rate that is lower than the first etching rate. The first and second layer of photoresist are patterned by exposure.

Abstract: A device is provided having a first electrode, a second electrode, a first photoactive region having a characteristic absorption wavelength ?1 and a second photoactive region having a characteristic absorption wavelength ?2. The photoactive regions are disposed between the first and second electrodes, and further positioned on the same side of a reflective layer, such that the first photoactive region is closer to the reflective layer than the second photoactive region. The materials comprising the photoactive regions may be selected such that ?1 is at least about 10% different from ?2. The device may further comprise an exciton blocking layer disposed adjacent to and in direct contact with the organic acceptor material of each photoactive region, wherein the LUMO of each exciton blocking layer other than that closest to the cathode is not more than about 0.3 eV greater than the LUMO of the acceptor material.

Abstract: An organic semiconductor device includes, between a pair of electrodes of a first metal electrode and a second electrode, at least, a light-emitting layer, a hole injection layer which removes holes from the first metal electrode, a hole transporting layer formed on the light-emitting layer on a side of the first metal electrode for transporting the holes removed by the hole injection layer to the light-emitting layer, and an electron transporting layer formed on the light-emitting layer on a side of the second electrode for removing electrons from the second electrode and transporting the electrons to the light-emitting layer, wherein the organic semiconductor device further includes a crystallinity controlling member which is a series of discontinuous clusters along the top surface of the hole injection layer that is in contact with the first metal electrode, for controlling an orientation of crystalline molecules.

Abstract: The organic TFT includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer insulating the gate electrode from the source and drain electrodes and the organic semiconductor layer; and a self-assembly monolayer (SAM) included between the insulating layer and the organic semiconductor layer. A compound forming the SAM has at least one terminal group selected from the group consisting of an unsubstituted or substituted C6-C30 aryl group and an unsubstituted or substituted C2-C30 heteroaryl group. The organic TFT is formed by forming the above-described layers and forming the SAM on the insulating layer before the organic semiconductor layer and source and drain electrodes are formed.

Abstract: Perfluoroisopropyl-substituted perfluorophtalocyanines, including zinc (II), copper (II) and oxo-vanadium (IV) complexes of 29H,31H,1,4,8,11,15,18,22,25-octakis-fluoro-2,3,9,10,16,17,23,24-octakis-perfluoro(isopropyl)phthalocyanine (F64Pc), may be sublimed under high vacuum conditions. The compounds/molecules produce advantageous thin films (20-100 nm) on glass substrates by physical vapor deposition. Many potential applications of the disclosed compounds/molecules are disclosed, e.g., as semiconductor materials. In situ electrical conduction and optical transmission measurements during the deposition process reveal the formation of conducting pathways and potential microscopic intermolecular electronic couplings.

Abstract: The invention relates to a semi-conductor transducer, and to the use thereof in an electron donor or electron acceptor space sensor. Said transducer consists of an insulating substrate on the surface of which two electrodes and a semiconductor sensitive element are provided. The sensitive element consists of a layer of a semiconductor molecular material M1 having a conductivity C1 and a layer of a semiconductor molecular material M2 having a conductivity C2 and a forbidden bandwidth Eg2<1 eV. The material layer M1 is in contact with the electrodes. The material layer M2 is deposited on the material layer M1 and is not in contact with the electrodes. The conductivities are such that C2/C1?1.

Abstract: Provided are a photosensor, a photosensor apparatus including the photosensor, and a display apparatus including the photosensor apparatus. The photosensor includes a substrate; a first light receiving layer which is formed on the substrate and comprises an oxide; a second light receiving layer which is connected to the first light receiving layer and comprises an organic material; and first and second electrodes which are respectively connected to the first and second light receiving layers.

Abstract: A top-emitting organic light emitting device having an improved pixel electrode layout for decreasing photo-leakage of a thin film transistor and enhancing an aperture ratio is provided. In the top-emitting organic light emitting device, the pixel electrode is designed to have the maximum size allowed by a layout design rule. Further, the pixel electrode is formed to overlap all the thin film transistors below.

Abstract: An organic photosensitive optoelectronic device, having a donor-acceptor heterojunction of a donor-like material and an acceptor-like material and methods of making such devices is provided. At least one of the donor-like material and the acceptor-like material includes a subphthalocyanine, a subporphyrin, and/or a subporphyrazine compound; and/or the device optionally has at least one of a blocking layer or a charge transport layer, where the blocking layer and/or the charge transport layer includes a subphthalocyanine, a subporphyrin, and/or a subporphyrazine compound.

Abstract: A main object of the present invention is to provide a static induction light emitting transistor having an organic EL element structure and a vertical FET structure which is possible to avoid a problem of the shielding of light and a problem of shielding of electric field by a gate electrode. The above object is achieved by providing a light emitting transistor 11 of a vertical FET structure comprising: on a substrate 12; a source electrode 13; a hole transporting layer 14 in which a slit-shaped gate electrode 15 is embedded; an equipotential layer 16; light emitting layer 17; and a transparent or semitransparent drain electrode 18, provided in this order. In this light emitting transistor, the drain electrode 18 provided on the opposite side of the gate electrode 15, viewing from the light emitting layer 17, is transparent or semitransparent. Therefore, light generated in the light emitting layer 17 can be taken out from the drain electrode side.

Abstract: The present invention provides a vertical organic FET with increased carrier mobility and suppressed molecular orientation of an active layer composed of an organic semiconductor.

Abstract: A light-emitting device is disclosed as typified by a laser oscillator formed by an electroluminescent material with improved oscillation efficiency of laser light and even reduced power consumption. The disclosed light-emitting device comprises a light-emitting element including a first electrode having a concave portion, an electroluminescent layer serving as a laser medium formed over the first electrode so as to be overlapped with the concave portion, and a second electrode formed over the electroluminescent layer so as to be overlapped with the concave portion, wherein light generated in the electroluminescent layer is resonated between the first electrode and the second electrode and emitted as laser light from the second electrode, an optical axis of the laser light intersects with the second electrode, the first electrode has a curved surface at the concave portion, and a center of curvature of the curved surface is located at the side of the second electrode above the first electrode.

Abstract: Disclosed are a composition comprising an organic insulating polymer in which a photo-reactive functional group showing an increased crosslinking degree is introduced into a side-chain, an organic insulating film comprising the composition, an organic thin film transistor (OTFT) comprising the organic insulating film, an electronic device comprising the organic thin film transistor and methods of fabricating the organic insulating film, the organic thin film transistor and the electronic device. The OTFT comprising the organic insulating film of example embodiments may not show any hysteresis during the driving of the OTFT, and therefore, may exhibit a homogeneous property.

Abstract: A dye-sensitized solar cell with high conversion efficiency is provided. The dye-sensitized solar cell according to the present invention has, between an electrode (2) formed on a surface of a transparent substrate (1) and a counter electrode (6), a light-absorbing layer (3) containing light-absorbing particles carrying dye and an electrolyte layer (5), characterized in that the light-absorbing layer (3) containing light-scattering particles (4) different in size from the light-absorbing particles. In such a dye-sensitized solar cell according to the present invention, the energy of light, which passes through a light-absorbing layer in a conventional cell structure, can be strongly absorbed by the dye in the light-absorbing layer of the present invention. This will increase the conversion efficiency and output current of the dye-sensitized solar cell.

Abstract: Provided is a field effect transistor having an organic semiconductor layer, in which the organic semiconductor layer contains at least a tetrabenzo copper porphyrin crystal and has peaks at two or more of Bragg angles (2?) in CuK? X-ray diffraction of 8.4°±0.2°, 10.2°±0.2°, 11.8°±0.2°, and 16.9°±0.2°, and the tetrabenzo copper porphyrin crystal comprises a compound represented by the following general formula (1): (Wherein R2's each represent a hydrogen atom, a halogen atom, a hydroxyl group, or an alkyl group, oxyalkyl group, thioalkyl group, or alkylester group having 1 to 12 carbon atoms, and R3's each represent a hydrogen atom or an aryl group.

Abstract: An electroluminescent device in which there is an electroluminescent which comprises a complex of general formula (L?)nM1M2 or of general formula (L?)n M1M2 (Lp), where Lp is a neutral ligand and where M1 is a rare earth, transition metal, lanthamide or an actimide, M2 is a non rare earth metal, L?is an organic complex and n is the combined valence state of M1 and M2.