Abstract: Flextensional transducers and methods of using flextensional transducers. The transducer includes a piezoelectric element and may include at least one endcap coupled with the piezoelectric element. The endcap may have an outer portion formed of a first material and an inner portion formed of a second material having a greater flexibility than the first material. The endcap may be coupled with an annular piezoelectric element near either its outer circumference or its inner circumference. The piezoelectric element may be a planar disk or have a curved bowl-shape. The transducer may be coupled with, and at least partially restrained by, a support structure. The transducer may also be configured to permit light to pass therethrough.

Abstract: An acoustic apparatus includes an anchored diaphragm that is actuated by mechanical energy and a transduction material that is disposed in the anchored diaphragm that generates the mechanical energy that actuates the anchored diaphragm. The acoustic apparatus further includes an extendable diaphragm that is actuated when the anchored diaphragm is actuated and a plurality of damping holes that are disposed about the extendable diaphragm and that allow the extendable diaphragm to actuate in a vertical direction.

Abstract: A ceramic electronic device includes: a multilayer chip in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers are alternately stacked; a first external electrode provided on the first end face; and a second external electrode provided on the second end face, wherein a first dielectric layer of the plurality of dielectric layers has a concavity which is recessed toward one side of a stacking direction of the multilayer chip, wherein a first internal electrode layer of the plurality of internal electrode layers crosses the concavity and has a cutout in the concavity, wherein the first internal electrode layer is next to the first dielectric layer and is positioned on other side of the stacking direction.

Abstract: A method for forming cavity of bulk acoustic wave resonator comprising following steps of: forming a sacrificial epitaxial structure mesa on a compound semiconductor substrate; forming an insulating layer on the sacrificial epitaxial structure mesa and the compound semiconductor substrate; polishing the insulating layer by a chemical-mechanical planarization process to form a polished surface; forming a bulk acoustic wave resonance structure on the polished surface, which comprises following steps of: forming a bottom electrode layer on the polished surface; forming a piezoelectric layer on the bottom electrode layer; and forming a top electrode layer on the piezoelectric layer, wherein the bulk acoustic wave resonance structure is located above the sacrificial epitaxial structure mesa; and etching the sacrificial epitaxial structure mesa to form a cavity, wherein the cavity is located under the bulk acoustic wave resonance structure.

Abstract: An intraluminal forward-looking image producing device and associated methods of use and construction is disclosed. In particular, the device of the present invention is an intraluminal forward-looking intravascular ultrasound (IVUS) image producing device. The invention also encompasses methods of using the intraluminal forward-looking intravascular ultrasound (IVUS) image producing device to image objects and material in a forward direction. The disclosed methods also involve manufacturing the intraluminal forward-looking intravascular ultrasound (IVUS) image producing device including the piezoelectric transducer. The resulting device is an elongated body configured to fit within the lumen of a vessel and having an imaging sensor located on the distal end of the elongated body configured to image objects and material in a forward direction.

Abstract: The invention relates to an oscillator comprising two resonators, the direction of the vector of acceleration sensitivity of at least one first resonator of the at least two resonators, said direction being relative to the mounting surface of said first oscillator, corresponding substantially to the reflected direction that is reflected by a mirror plane of the vector of acceleration sensitivity of at least one second resonator of the at least two resonators, said direction being relative to the mounting surface of said second oscillator. The invention also relates to an oscillator comprising two resonators, the oscillator comprising a resistor which is effectively connected in parallel with one of the resonators and the resistance value of which is less than a hundred times that of the series resonator resistance of the combined resonator at the desired resonant frequency.

Abstract: [Object] It is an object of the present invention to provide a lithium tantalate single crystal substrate which undergoes only small warpage, is free from cracks and scratches, has better temperature non-dependence characteristics and a larger electromechanical coupling coefficient than a conventional Y-cut LiTaO3 substrate.

Abstract: A wiring board includes an insulating substrate including a cutout portion that opens in a main surface of the insulating substrate and a side surface of the insulating substrate, an inner surface electrode on an inner surface of the cutout portion, an external electrode on the main surface of the insulating substrate, and a connecting section where the inner surface electrode and the external electrode are connected to each other. The connecting section is thicker than the inner surface electrode and the external electrode.

Abstract: A piezoelectric actuator comprises a vibration plate, a first electrode, a first piezoelectric layer, a second electrode, a second piezoelectric layer and a third electrode. With respect to a top-bottom direction orthogonal to a surface of the vibration plate, the vibration plate, the first electrode, the first piezoelectric layer, the second electrode, the second piezoelectric layer and the third electrode are stacked in this order. The second piezoelectric layer is narrower than the first piezoelectric layer in a first direction parallel to the surface of the vibration plate. The third electrode extends in the first direction and covers both side surfaces of both of the first piezoelectric layer and the second piezoelectric layer in the first direction.

Abstract: A piezoelectric element for an automatic frequency control circuit, the element including: a balance spring formed of a strip of piezoelectric material; at least a first electrode, configured to be connected to the circuit and being disposed on all or part of one side of the strip; at least a second electrode configured to be connected to the circuit and being disposed on all or part of another one side of the strip distinct from the one side on which the first electrode is disposed, the piezoelectric material being a piezoelectric crystal or a piezoelectric ceramic; and at least two discontinuous layers of an insulating material, each discontinuous layer being disposed on at least one side of the strip and separating the first electrode from the second electrode, the layers of insulating material being distributed on predetermined portions of the balance spring substantially forming arcs in a predetermined angular periodicity.

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

Abstract: A piezoelectric element for an automatic frequency control circuit. The element includes a balance spring formed of a piezoelectric crystal strip, a first electrode connected to the automatic control circuit, and disposed on at least a first side of the strip, and a second electrode connected to the automatic control circuit and disposed on at least a second side of the strip. The first and second electrodes are placed on one portion or over the entire length of the balance spring in a predetermined angular distribution.

Abstract: An apparatus for ultrasound irradiation of a body part (208) includes a first ultrasound transducer (216), and a second ultrasound transducer (212) mounted oppositely, and is configured: a) such that at least two ultrasound receiving elements, for determining a relative orientation of the first to the second transducer, are attached to the first transducer; b) for a beam, from the first transducer, causing cavitation, and/or bubble destruction of systemically circulating microbubbles, within the body part; or c) both with the attached elements and for the causing. The apparatus registers, with said first transducer, the second transducer, by using as a reference respectively the features a) and/or b).

Abstract: Single bulk unimorph piezoelectric elements, with interdigitated electrodes aligned obliquely relative to the direction perpendicular to the axis of the element, such that a torsional response is induced into the element. When such elements are used as a beam structure, with angularly oriented electrodes on both opposite surfaces of the beam, and with their orientations at mutually opposite angles, motion ranging from pure torsional rotation to pure bending can be obtained, depending on the comparative level and polarity of the voltages applied to each of the two electrode sets. If such elements are used as the spiral support arms of a central platform, a large displacement of the stage can be achieved. Due to the oblique orientation of the IDE's, the piezoelectric transduction induces torsional deformation in the spirals, and this torsion is converted by the spiral arms to a parallel out-of-plane platform motion.

Abstract: The purpose of the present invention is to provide a fibrous piezoelectric element which enables a large electric signal to be drawn out by stress produced by relatively small deformation. A piezoelectric element includes a braid composed of a conductive fiber and a piezoelectric fiber. In the braid, the conductive fiber is a core, and the piezoelectric fiber is a covering fiber that covers the periphery of the conductive fiber.

Abstract: The invention provides for an interface device that measures strain on a specific area of the printed circuit board. The measurements are converted into an electrical signal and sent for processing. The processing results in the apparatus performing a desired function. The interface device includes a printed circuit board. The printed circuit board comprises a plurality of layers, including a conductive layer. The interface device further includes a strain sensing device. The strain sensing device is mounted on the printed circuit board and includes a substrate, a strain sensing element, and associated circuitry. In some instances, the strain sensing device includes one strain sensing element and in other instances multiple strain sensing elements can also be used.

Abstract: An apparatus includes a reservoir and a printhead. The printhead includes a support structure including a deformable portion defining at least a top surface of a pumping chamber, a flow path extending from the reservoir to the pumping chamber to transfer fluid from the reservoir to the pumping chamber, and an actuator disposed on the deformable portion of the support structure. A trench is defined in a top surface of the actuator. Application of a voltage to the actuator causes the actuator to deform along the trench, thereby causing deformation of the deformable portion of the support structure to eject a drop of fluid from the pumping chamber.

Abstract: A method of delivery ultrasonic energy and a therapeutic compound to a treatment site and an ultrasonic catheter system are disclosed. The ultrasonic catheter system comprises a tubular body having a proximal end, a distal end and a treatment zone located between the distal end and the proximal end, a fluid delivery lumen, at least one ultrasound radiating element positioned in the treatment zone, wiring electrically coupled to the at least one ultrasound radiating element and extending through the tubular body and terminating at a connector, and a control system comprising external circuitry and an isolation pod that is configured to be electrically connected to the connector, the isolation pod being positioned between the tubular body and the external system and comprising an isolation barrier and circuitry for driving the ultrasound radiating element.

Abstract: Various devices related to a therapeutic ultrasound device for use during a medical procedure to cauterize tissue are disclosed. The high intensity focused ultrasound device can include a transducer for producing high intensity focused ultrasound. The transducer includes a shell configured to receive an acoustic stack. The acoustic stack includes a piezoelectric layer, a matching layer, and a plurality of electrodes. The transducer includes an air-filled pocket formed between the inner surface of the shell and the piezoelectric layer of the acoustic stack, wherein the air-filled pocket is configured to ensure high efficiency of the transducer.

Abstract: A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

Abstract: An apparatus including a first member; a first array of flexible actuators connected to the first member, where each of the flexible actuators includes a piezoelectric member and an extension on the piezoelectric member; and a first flexible membrane connected to the first array of flexible actuators. Each of the piezoelectric members is configured to be activated to move their respective extensions. Each of the extensions, when moved by their respective piezoelectric members, is configured to move the first flexible membrane.

Abstract: An MEMS piezoelectric transducer and a method for manufacturing the same are provided. The first substrate includes a first base, at least one conductive layer, a signal processing circuit and/or a driving circuit arranged on a side of the first base, where the signal processing circuit and/or the driving circuit is electrically connected to the at least one conductive layer. The second substrate includes a second base, a first electrode arranged on a side of the second base, and a piezoelectric layer arranged on the first electrode. A side of the first substrate where the at least one conductive layer is arranged is attached and fixed to a side of the second substrate where the first electrode and the piezoelectric layer are arranged. The first electrode and the at least one conductive layer are electrically connected through a conductive through via.

Abstract: Acoustic resonator devices and methods are disclosed. An acoustic resonator device includes a substrate having a front surface and a cavity, a perimeter of the cavity defined by a lateral etch-stop comprising etch-stop material. A back surface of a single-crystal piezoelectric plate is attached to the front surface of the substrate except for a portion of the piezoelectric plate that forms a diaphragm that spans the cavity. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm.

Abstract: An end-surface-reflection surface acoustic wave device, which reflects a surface acoustic wave between first and second end surfaces facing each other, includes a support substrate, an intermediate layer, a piezoelectric layer, and an IDT electrode. The first end surface is located at one end portion in a surface-acoustic-wave propagation direction and extends from a main surface of the piezoelectric layer to at least a portion of the intermediate layer. The second end surface is located at the other end portion in the surface-acoustic-wave propagation direction and extends from the main surface of the piezoelectric layer to at least a portion of the intermediate layer. The support substrate includes support substrate portions that are located outside the first and second end surfaces in the surface-acoustic-wave propagation direction.

Abstract: A bulk-acoustic wave resonator includes a substrate; a membrane layer forming a cavity with the substrate; a first electrode at least partially disposed on an upper portion of the cavity including an end portion that is thicker than other portions of the first electrode; an insertion layer including a first portion disposed adjacent to from the end portion of the first electrode and a second portion disposed on an upper portion of the first electrode; a piezoelectric layer disposed to cover the insertion layer; and a second electrode disposed on an upper portion of the piezoelectric layer.

Abstract: A dilation instrument and method of imaging an anatomy within a patient includes a dilation catheter having a catheter body, a fluid conduit extending along the catheter body, a dilator, and at least one ultrasonic transducer. The catheter body is configured to distally extend from an instrument body and move relative to the instrument body. The dilator is connected to the catheter body in fluid communication with the fluid conduit and configured to receive a fluid from the fluid conduit and thereby inflate from a contracted state to an expanded state. The at least one ultrasonic transducer positioned on the catheter body and configured to electrically connect to an ultrasonic generator. The at least one ultrasonic transducer is configured to emit a source ultrasonic signal toward an anatomy within a patient for producing a diagnostic or a therapeutic effect.

Abstract: One aspect relates to a guidewire system, a measuring system, and a method for manufacturing such guidewire system. The guidewire system includes a guidewire and a surface acoustic wave sensor device. A portion of a surface of the guidewire is coated by the surface acoustic wave sensor device. The surface acoustic wave sensor device may be configured for measuring a pressure change. The surface acoustic wave sensor device includes a piezoelectric substrate and a transducer. A thickness of the surface acoustic wave sensor device perpendicular to a longitudinal direction of the guidewire is smaller than 100 ?m.

Abstract: An acoustic wave device includes IDT electrodes with different wavelengths determined by electrode finger pitches. A piezoelectric thin film is laminated directly on or indirectly above a high acoustic velocity member. A silicon oxide film is laminated on the piezoelectric thin film, IDT electrodes are laminated on the silicon oxide film. When ? represents a wavelength of one of the IDT electrodes having the shortest wavelength, y represents a wavelength normalized film thickness (%) that is a percentage of a film thickness of the piezoelectric thin film with respect to the wavelength ?, and x represents a wavelength normalized film thickness (%) that is a percentage of a film thickness of the silicon oxide film with respect to the wavelength ?, y is equal to or smaller than about 350% and y<1.6x(?0.01)+0.05x(?0.6)?1 is satisfied.

Abstract: A method of fabricating the semiconductor device includes the following steps. Forming a sacrificial portion at a first end of an upper electrode layer before a passivation layer is formed so that it supports a corresponding end portion of the passivation layer, making the passivation layer not suspended at all. In this way, the suspended portion of the passivation layer will not be damaged during the formation of a contact pad. In addition, subsequent to the formation of the contact pad, removing the sacrificial portion, freeing up a space under the end portion of the passivation layer so that the end portion itself becomes a suspended portion. This can ensure performance of the resulting semiconductor device.

Abstract: A micromechanical component having at least one electromechanical flexible structure, each of which includes a first piezoelectric layer, a first outer electrode situated on a first side of the first piezoelectric layer, a first intermediate electrode situated on a second side, oriented away from the first side, of the first piezoelectric layer, a second piezoelectric layer situated on a side of the first intermediate electrode oriented away from the first piezoelectric layer, and a second outer electrode situated on a side of the second piezoelectric layer oriented away from the first intermediate electrode, the at least one electromechanical flexible structure having in each case a second intermediate electrode that is situated on the side of the first intermediate electrode oriented away from the first piezoelectric layer, between the second piezoelectric layer and the first intermediate electrode.

Abstract: Described embodiments include an apparatus that includes a plurality of flaps configured to fold over each other in a folded configuration. Each one of the flaps includes one or more ultrasound transducer elements. One or more balloons are coupled to the flaps, the balloons being configured to, upon being inflated, unfold the flaps from the folded configuration. Other embodiments are also described.

Abstract: A piezo-driven, vibrating beam is applicable to surgical procedures. A rod of piezoelectric material defines a length with proximal and distal ends. A pattern of electrodes, disposed adjacent to and along the length of the rod of piezoelectric material, is adapted for connection to a generator operative to stimulate the piezoelectric material, causing the rod to assume one or more vibratory states. In preferred embodiments, the proximal end of the rod of piezoelectric material is adapted for coupling to a blocking mass causing the vibratory states to be concentrated at the distal end of the rod of piezoelectric material. The pattern of electrodes may comprise interdigitated fingers, and the system may further include a material encapsulating the rod and the pattern of electrodes. Preferred embodiments may further include a plurality of coextensive, parallel rods forming a basic unit, each rod having a separate pattern of electrodes adjacent thereto.

Abstract: The present disclosure is directed to formation of a low-k spacer. For example, the present disclosure includes an exemplary method of forming the low-k spacer. The method includes depositing the low-k spacer and subsequently treating the low-k spacer with a plasma and/or a thermal anneal. The low-k spacer can be deposited on a structure protruding from the substrate. The plasma and/or thermal anneal treatment on the low-k spacer can reduce the etch rates of the spacer so that the spacer is etched less in subsequent etching or cleaning processes.

Abstract: A method is provided for fabricating piezoelectric plates. A sacrificial layer is formed overlying a growth substrate. A template layer, with openings exposing sacrificial layer surfaces, is formed over the sacrificial layer. An adhesion layer/first electrode stack is selectively deposited in the openings overlying the sacrificial layer surfaces, and a piezoelectric material formed in the openings overlying the stack. Then, a second electrode is formed overlying the piezoelectric material. Using the second electrode as a hardmask, the piezoelectric material is etched to form polygon-shaped structures, such as disks, attached to the sacrificial layer surfaces. After removing the template layer and annealing, the polygon-shaped structures are separated from the sacrificial layer. With the proper choice of growth substrate material, the annealing can be performed at a relatively high temperature.

Abstract: An oscillator includes a resonation element, a first package that houses the resonation element and airtightly sealed, a circuit element that is positioned outside the first package and electrically connected to the resonation element, and a second package that houses the first package and the circuit element and sealed in a depressurized state. In addition, the first package includes a first base having a first recessed portion, and a first lid joined to the first base so as to close an opening of the first recessed portion, and the second package includes a second base having a second recessed portion and a second lid joined to the second base so as to close an opening of the second recessed portion. The circuit element is attached to the first base, and the first base is attached to the second base.

Abstract: A composite electronic component includes a first acoustic wave filter, a second acoustic wave filter, a spacer layer, and a switch. The second acoustic wave filter faces the first acoustic wave filter in a first direction. The switch switches an ON state and an OFF state of the first acoustic wave filter and an ON state and an OFF state of the second acoustic wave filter. A first functional electrode and a second functional electrode are located in a hollow space and face each other in the first direction. The switch brings at least one of the first acoustic wave filter and the second acoustic wave filter into the OFF state.

Abstract: In an array of single crystal acoustic resonators, the effective coupling coefficient of first and second strained single crystal filters are individually tailored in order to achieve desired frequency responses. In a duplexer embodiment, the effective coupling coefficient of a transmit band-pass filter is lower than the effective coupling coefficient of a receive band-pass filter of the same duplexer. The coefficients can be tailored by varying the ratio of the thickness of a piezoelectric layer to the total thickness of electrode layers or by forming a capacitor in parallel with an acoustic resonator within the filter for which the effective coupling coefficient is to be degraded. Further, a strained piezoelectric layer can be formed overlying a nucleation layer characterized by nucleation growth parameters, which can be configured to modulate a strain condition in the strained piezoelectric layer to adjust piezoelectric properties for improved performance in specific applications.

Abstract: Provided is a composite wafer (c-wafer) having an oxide single-crystal film transferred onto a support wafer (s-wafer), the film being a lithium tantalate or lithium niobate film, and c-wafer being unlikely to have cracking or peeling caused in the lamination interface between the film and s-wafer. More specifically, provided is a method of producing c-wafer, including steps of: implanting hydrogen atom ions or molecule ions from a surface of the oxide wafer (o-wafer) to form an ion-implanted layer inside thereof; subjecting at least one of the surface of o-wafer and a surface of s-wafer to surface activation; bonding the surfaces together to obtain a laminate; providing at least one of the surfaces of the laminate with a protection wafer having thermal expansion coefficient smaller than that of o-wafer; and heat-treating the laminate with the protection wafer at 80° C. or higher to split the laminate along the layer to obtain c-wafer.

Abstract: An ultrasonic device includes a plurality of ultrasonic wave transmitting sections adapted to transmit an ultrasonic wave as a fundamental wave, and a plurality of ultrasonic wave receiving sections capable of receiving a second-order harmonic wave with respect to the fundamental wave, the plurality of ultrasonic wave transmitting sections and the plurality of ultrasonic wave receiving sections are arranged along an X direction, the plurality of ultrasonic wave receiving sections are arranged at first intervals corresponding to the order of the second-order harmonic wave, the N ultrasonic wave transmitting sections constitute a single transmission channel, and are wired with each other, and the transmission channels are arranged at second intervals each twice as long as the first interval. N is a natural number.

Abstract: Provided are a piezoelectric device and a method of fabricating the same and the piezoelectric device may include a substrate including a 3-dimensional pattern surface layer; and a piezoelectric material layer, which is formed on the pattern surface layer and forms a 3-dimensional interface with the pattern surface layer.

Abstract: A piezoelectric element body has a first principal surface and a second principal surface. A pair of first electrodes is disposed on the first principal surface. The vibrating body includes a metal plate, an insulating layer, and a pair of second electrodes. The metal plate has a third principal surface and a fourth principal surface. The insulating layer is disposed on the third principal surface. The pair of second electrodes is disposed on the insulating layer. The piezoelectric element and the vibrating body are disposed in such a manner that the first principal surface and the third principal surface oppose each other via the insulating layer. The pair of second electrodes physically contacts the respective first electrodes. The second electrodes are exposed from the piezoelectric element and are separated from all of edges of the insulating layer, when viewed from a direction orthogonal to the third principal surface.

Abstract: An acoustic wave sensor may include: a continuous membrane deflectable by acoustic waves to be detected, and a piezoelectric layer provided on the membrane and including a plurality of piezoelectric layer portions respectively equipped with at least two individual electric contact structures configured to electrically connect the respective piezoelectric layer portions. Electric contact structures associated with different piezoelectric layer portions may be separated from each other.

Abstract: A resonance apparatus that processes an electrical loss using a conductive material and a method of manufacturing the resonance apparatus are provided. The resonance apparatus includes a lower electrode formed at a predetermined distance from a substrate, and a piezoelectric layer formed on the lower electrode. The resonance apparatus further includes an upper electrode formed on the piezoelectric layer, and a conductive layer formed on the upper electrode or the lower electrode.

Abstract: An acoustic wave device includes a silicon oxide film, a piezoelectric body made of lithium tantalate, and interdigital transducer electrodes stacked on a supporting substrate made of silicon, in which the values of the wave length-normalized film thickness and the Euler angle of the piezoelectric body made of lithium tantalate, the wave length-normalized film thickness of the silicon oxide film, the wave length-normalized film thickness of the interdigital transducer electrodes in terms of aluminum thickness, the propagation direction of the supporting substrate, and the wave length-normalized film thickness of the supporting substrate are set such that represented by Formula (1) for at least one of responses of first, second, and third higher-order modes is more than about ?2.4, and TSi>20.

Abstract: A resonator element includes: a substrate; and an electrode that includes a first conductive layer provided on a surface of the substrate, and a second conductive layer, provided on the opposite side to the first conductive layer on the substrate side, which is disposed within an outer edge of the first conductive layer when seen in a plan view from a direction perpendicular to the surface.