Abstract: A vibration generating device includes a first piezoelectric device including at least one slit, a first electrode on a first surface of the first piezoelectric device, and a second electrode on a second surface opposite to the first surface of the first piezoelectric device.

Abstract: The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.

Abstract: Intraluminal ultrasound devices, systems and methods are provided. In one embodiment, an intraluminal ultrasound device includes a flexible elongate member configured to be positioned within a body lumen of a patient, the flexible elongate member including a distal portion and a longitudinal axis; and a transducer array disposed at the distal portion of the flexible elongate member and circumferentially positioned around the longitudinal axis of the flexible elongate member. The transducer array includes a plurality of micromachined ultrasound transducers (MUTs). In addition, the transducer array is configured to obtain ultrasound imaging data of the body lumen in response to a first electrical signal, and apply an ultrasound therapy within the body lumen in response to a second electrical signal.

Abstract: An acoustic wave device includes a support substrate made of silicon, a piezoelectric body provided directly or indirectly on the support substrate, the piezoelectric body including a pair of main surfaces facing each other, and an interdigital transducer electrode provided directly or indirectly on at least one of the main surfaces of the piezoelectric body, a wave length that is determined by an electrode finger pitch of the interdigital transducer electrode being ?. An acoustic velocity VSi=(V1)1/2 of bulk waves that propagate in the support substrate, which is determined by V1 out of solutions V1, V2, V3 of x derived from the expression, Ax3+Bx2+Cx+D=0, is higher than or equal to about 5500 m/s.

Abstract: A multi-level piezoelectric actuator is manufactured using wafer level processing. Two PZT wafers are formed and separately metallized for electrodes. The metallization on the second wafer is patterned, and holes that will become electrical vias are formed in the second wafer. The wafers are then stacked and sintered, then the devices are poled as a group and then singulated to form nearly complete individual PZT actuators. Conductive epoxy is added into the holes at the product placement step in order to both adhere the actuator within its environment and to complete the electrical via thus completing the device. Alternatively: the first wafer is metallized; then the second wafer having holes therethrough but no metallization is stacked and sintered to the first wafer; and patterned metallization is applied to the second wafer to both form electrodes and to complete the vias. The devices are then poled as a group, and singulated.

Abstract: An acoustic resonator includes: a resonating unit including a resonating unit including a piezoelectric layer and first and second electrodes disposed on a lower side and an upper side of the piezoelectric layer, respectively; a substrate disposed on a lower side of the resonating unit; a support unit providing a cavity between the substrate and the resonating unit; and an intermediate metal layer separated from the second electrode and disposed in the resonating unit such that at least a portion thereof is surrounded by the piezoelectric layer and the second electrode.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming a piezoelectric device including a piezoelectric membrane and a plurality of conductive layers. The method includes forming the plurality of conductive layers in the piezoelectric membrane, the plurality of conductive layers are vertically offset one another. A masking layer is formed over the piezoelectric membrane. An etch process is performed according to the masking layer to concurrently expose an upper surface of each conductive layer in the plurality of conductive layers. A plurality of conductive vias are formed over the upper surface of the plurality of conductive layers.

Abstract: A method of manufacture and resulting structure for a single crystal electronic device with an enhanced strain interface region. The method of manufacture can include forming a nucleation layer overlying a substrate and forming a first and second single crystal layer overlying the nucleation layer. This first and second layers can be doped by introducing one or more impurity species to form a strained single crystal layers. The first and second strained layers can be aligned along the same crystallographic direction to form a strained single crystal bi-layer having an enhanced strain interface region. Using this enhanced single crystal bi-layer to form active or passive devices results in improved physical characteristics, such as enhanced photon velocity or improved density charges.

Abstract: A sensor device (1) comprises a piezoelectric transducer (3) and a base member (2). The piezoelectric transducer includes a piezoelectric member with at least one excitation electrode (37, 38) connected to a first face thereof and having a thickness (h) between the first face and a second face. The piezoelectric transducer (3) is attached to a supporting face of the base member (2) with the second face of the piezoelectric transducer positioned adjacent the supporting face of the base member. The base member includes at least one acoustic wave reflecting tag (21) distant from the piezoelectric member.

Abstract: A bulk-acoustic wave resonator may include: a substrate; a resonance portion; a first electrode disposed on the substrate; a piezoelectric layer disposed on the first electrode in the resonance portion; a second electrode disposed on the piezoelectric portion in the resonance portion; and a seed layer disposed in a lower portion of the first electrode. The seed layer may be formed of titanium (Ti) having a hexagonal close packed (HCP) structure, or an alloy of Ti having the HCP structure. The seed layer may have a thickness greater than or equal to 300 ? and less than or equal to 1000 ?, or may be thinner than the first electrode.

Abstract: A liquid discharge head includes a common flow channel extending along a first direction, and individual flow channels arranged along the first direction. Each individual flow channel includes a first pressure chamber and a second pressure chamber arranged along the first direction, each of which communicates with the common flow channel, a nozzle located away from the first and second pressure chambers in a second direction orthogonal to the first direction, and a connection flow channel connecting the first pressure chamber, the second pressure chamber, and the nozzle with each other. One end of the connection flow channel in the second direction communicates with the first pressure chamber and the second pressure chamber, and the other end thereof in the second direction communicates with the nozzle. The connection flow channel extends along the second direction from the one end to the other end thereof in the second direction.

Abstract: An ultrasonic device includes: a substrate provided with a first opening and a second opening; a support film that is provided on the substrate and blocks the first opening and the second opening; a transmitting piezoelectric film that is provided on the support film at a position which overlaps the first opening when viewed in a thickness direction of the substrate and is interposed between a pair of electrodes in the thickness direction of the substrate; and a receiving piezoelectric film that is provided on the support film at a position which overlaps the second opening when viewed in the thickness direction of the substrate and is interposed between a pair of electrodes in the thickness direction of the substrate. In the thickness direction of the substrate, a thickness dimension of the transmitting piezoelectric film is smaller than a thickness dimension of the receiving piezoelectric film.

Abstract: Various systems, devices, and methods for a vehicle smart brake pad comprising a sensor such as a force sensing device, and a production process thereof. For example, a production process of a vehicle brake pad can include the following steps in time sequence: applying an electrical circuit a support plate; screen printing on the electrical circuit of at least a first electrode; screen printing on the at least first electrode of a sheet of piezoelectric material; screen printing on the sheet of at least a second electrode; applying a friction pad on the support plate; and bulk polarizing the sheet of piezoelectric material by a supply of power to the at least first and second electrodes.

Abstract: A SAW resonator comprises two reflectors and a transducer arranged between the reflectors. A resonant space between the transducer and a respective reflector is set large enough to enable occurrence of main resonance and at least one further resonance of comparable admittance. Thus, a multiple resonant resonator is achieved that can be used as a parallel resonator in a filter circuit with a DMS track for example to improve attenuation in a stop band.

Abstract: Disclosed herein is an ultrasonic probe including a piezoelectric layer, a matching layer disposed at an upper portion of the piezoelectric layer, a conductive member disposed at a lower portion of the piezoelectric layer, a second connector coupled to at least one side of the conductive member, and a printed circuit board coupled to a side of the second connector and electrically coupled to the second connector. A printed circuit board is disposed outside a laminated structure of the acoustic element so that the printed circuit board can be prevented from affecting acoustic characteristics of the ultrasonic probe, a failure in a process of manufacturing the ultrasonic probe that occurs due to a change in temperature or humidity can be prevented, and the manufacturing process can be relatively simplified.

Abstract: An acoustic wave device includes a piezoelectric layer, an IDT electrode, a high-acoustic-velocity support substrate, and a low-acoustic-velocity film. The high-acoustic-velocity support substrate is located on an opposite side of the piezoelectric layer from the IDT electrode in the thickness direction of the piezoelectric layer. The low-acoustic-velocity film is disposed between the high-acoustic-velocity support substrate and the piezoelectric layer in the thickness direction. The high-acoustic-velocity support substrate includes a base region and a surface region disposed nearer to the low-acoustic-velocity film than the base region in the thickness direction and whose crystal quality is worse than that of the base region. The surface region includes first and second layers disposed nearer to the base region than the first layer in the thickness direction and whose crystal quality is better than that of the first layer.

Abstract: An acoustic wave device includes first and second IDT electrodes electrically connected in series with each other by a common busbar common to the first and second IDT electrodes. In each of a first acoustic impedance layer and a second acoustic impedance layer, at least one of at least one high acoustic impedance layer and at least one low acoustic impedance layer is a conductive layer. At least a portion of the conductive layer in the first acoustic impedance layer and at least a portion of the conductive layer in the second acoustic impedance layer do not overlap with the common busbar when viewed in plan from a thickness direction of a piezoelectric layer. The conductive layer in the first acoustic impedance layer and the conductive layer in the second acoustic impedance layer are electrically insulated from each other.

Abstract: A method of manufacturing a bonded substrate, which has a quartz substrate and a piezoelectric substrate bonded, includes irradiating a bonding surface of the quartz substrate and a bonding surface of the piezoelectric substrate with ultraviolet light under a pressure lower than atmosphere pressure. After the irradiation, the bonding surface of the quartz substrate and the bonding surface of the piezoelectric substrate are brought into contact. And the quartz substrate and the piezoelectric substrate are pressurized in a thickness direction to bond the bonding surfaces.

Abstract: A method for fabricating an intravascular imaging assembly is provided. In one embodiment, the method includes forming a stacked structure (415) having a plurality of sacrificial material layers disposed between a plurality of ultrasound material layers in an alternating pattern; dicing the stacked structure (420) to form a plurality of elongated strips, each comprising an array of ultrasound elements defined by the plurality of ultrasound material layers and spacers defined by the plurality of sacrificial material layers; coupling a first elongated strip (430) of the plurality of elongated strips to a flexible circuit substrate; and removing the spacers (435) of the first elongated strip from the flexible circuit substrate.

Abstract: A method for fabricating bulk acoustic wave resonator with mass adjustment structure, comprising following steps of: forming a sacrificial structure mesa on a substrate; etching the sacrificial structure mesa such that any two adjacent parts have different heights, a top surface of a highest part of the sacrificial structure mesa is coincident with a mesa top extending plane; forming an insulating layer on the sacrificial structure mesa and the substrate; polishing the insulating layer to form a polished surface; forming a bulk acoustic wave resonance structure including a top electrode, a piezoelectric layer and a bottom electrode on the polished surface; etching the sacrificial structure mesa to form a cavity; the insulating layer between the polished surface and the mesa top extending plane forms a frequency tuning structure, the insulating layer between the mesa top extending plane and the cavity forms a mass adjustment structure.

Abstract: A semiconductor package structure includes a plurality of transducer devices, a cap structure, at least one redistribution layer (RDL) and a protection material. The transducer devices are disposed side by side. Each of the transducer devices has at least one transducing region, and includes a die body and at least one transducing element. The die body has a first surface and a second surface opposite to the first surface. The transducing region is disposed adjacent to the first surface of the die body. The transducing element is disposed adjacent to the first surface of the die body and within the transducing region. The cap structure covers the transducing region of the transducer device to form an enclosed space. The redistribution layer (RDL) electrically connects the transducer devices. The protection material covers the transducer devices.

Abstract: A method of fabricating a configurable single crystal acoustic resonator (SCAR) device integrated circuit. The method includes providing a bulk substrate structure having first and second recessed regions with a support member disposed in between. A thickness of single crystal piezo material is formed overlying the bulk substrate with an exposed backside region configured with the first recessed region and a contact region configured with the second recessed region. A first electrode with a first terminal is formed overlying an upper portion of the piezo material, while a second electrode with a second terminal is formed overlying a lower portion of the piezo material. An acoustic reflector structure and a dielectric layer are formed overlying the resulting bulk structure. The resulting device includes a plurality of single crystal acoustic resonator devices, numbered from (R1) to (RN), where N is an integer greater than 1.

Abstract: There are provided a head chip and so on capable of improving the print image quality. The head chip according to an embodiment of the present disclosure is provided with an actuator plate having a plurality of ejection grooves and a nozzle plate having a plurality of nozzle holes individually communicated with the plurality of ejection grooves. The plurality of ejection grooves is arranged side by side so as to at least partially overlap each other along a predetermined direction. Further, the nozzle holes adjacent to each other along the predetermined direction out of the plurality of nozzle holes are arranged so as to be shifted from each other along an extending direction of the ejection grooves in the nozzle plate.

Abstract: Ultrasound imaging systems and methods for generated clutter-reduced images are provided. For example, an ultrasound imaging system can include an array of acoustic elements in communication with a processor. The processor is configured to activate the array to perform a scan sequence to obtain a plurality of signals, identify off-axis signals from the plurality of signals by comparing the right subaperture and the left subaperture, and create a clutter-reduced image based on the comparison. Because off-axis signals are more likely to create image clutter, reducing the influence of off-axis signals on the image can therefore improve the quality of the image. Accordingly, embodiments of the present disclosure provide systems, methods, and devices for generating ultrasound images that have reduced or minimized clutter, even for images obtained using arrays that do not satisfy the Nyquist criterion.

Abstract: Disclosed is a high-dielectric adhesive film, particularly a high-dielectric adhesive film including a substrate layer, a ceramic-mixed layer formed on one surface of the substrate layer and an adhesive layer formed on the surface of the substrate layer on which the ceramic-mixed layer is formed. The high-dielectric adhesive film thus configured is improved in permittivity due to the use of a ceramic component, thus preventing the malfunction of electronic devices, increasing the stability and performance thereof, and exhibiting heat dissipation effects.

Abstract: A well tool can be used in a wellbore that can measure characteristics of an object in the wellbore. The well tool includes an ultrasonic transducer for generating an ultrasonic wave in a medium of the wellbore. The ultrasonic transducer includes a front layer, a rear layer, backing material coupled to the rear layer, and piezoelectric material coupled to the front layer and to the backing material. The rear layer can improve signal-to-noise ratio of the transducer in applications such as imaging and caliper applications.

Abstract: Acoustic resonators and filter devices. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces. The back surface is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. A conductor pattern formed is formed on the front surface of the piezoelectric plate, including an interdigital transducer (IDT) with interleaved fingers of the IDT on the diaphragm. The substrate and the piezoelectric plate are the same material.

Abstract: The invention provides a planarization method, which can make the local flatness of the product to be processed more uniform. The product has a cavity filled with oxide and includes a first electrode layer, a piezoelectric layer and a second electrode layer superposed on the cavity. The first electrode layer covers the cavity and includes a first inclined face around the first electrode layer, and the piezoelectric layer covers the first electrode layer and is arranged on the first electrode layer. The planarization method includes: depositing a passivation layer on the second electrode layer and etching the passivation layer completely until the thickness of the passivation layer is reduced to the required thickness.

Abstract: A wafer level ultrasonic chip module includes a substrate, a composite layer and a base material. The substrate has a through slot passing through an upper surface and a lower surface of the substrate. The composite layer includes an ultrasonic body and a protective layer. A lower surface of the ultrasonic body is exposed from the through slot. The protective layer covers the ultrasonic body and a partial upper surface of the substrate. The composite layer has a groove passing through an upper surface and a lower surface of the protective layer, and communicating with the through slot. The ultrasonic body corresponds to the through slot. The base material covers the through slot, such that a space is formed among the through slot, the lower surface of the ultrasonic body and an upper surface of the base material.

Abstract: The disclosure provides a touch recognition device, including a display device and manufacturing method thereof. The touch recognition device includes a substrate, a thin film transistor layer, a transparent conductive layer, a first metal layer, a piezoelectric material layer and a second metal layer. The transparent conductive layer is disposed on an end of the thin film transistor layer, and the transparent conductive layer includes a plurality of transparent electrodes. The first metal layer is adjacent to the plurality of transparent electrodes. The piezoelectric material layer is disposed on the transparent conductive layer and the first metal layer. The second metal layer is disposed on the piezoelectric material layer to achieve the effect of increasing voltage of signals and power of ultrasound.

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

Abstract: A method of making a SiC resonator includes forming a layer of an oxide material on a relatively thick wafer of SiC; bonding the layer of oxide material on the relatively thick wafer of SiC to a handle wafer having at least an oxide exterior surface, the resulting bond being substantially free of voids; planarizing the relatively thick wafer of SiC to a desired thickness; forming top and bottom electrodes on the wafer of SiC wafer to define a SiC wafer resonator portion; and forming a trench around the top and bottom electrodes, the tench completely penetrating the planarized wafer of SiC around a majority of a distance surrounding said top and bottom electrodes, except for one or more tether regions of the planarized wafer of SiC which remain physically coupled a remaining portion the SiC wafer resonator portion which defines a frame formed of the planarized wafer of SiC surrounding the SiC wafer resonator portion.

Abstract: A vibration wave motor includes an annular oscillator, and an annular moving member provided so as to be in press contact with the oscillator. The oscillator includes an annular vibrating plate, and an annular piezoelectric element provided on a first surface of the vibrating plate. The vibrating plate is in contact with the moving member via a second surface of the vibrating plate, which is opposite the first surface. The piezoelectric element has a plurality of drive phase electrodes. When a driving region represents a region of the oscillator in which the drive phase electrodes are provided, and a non-driving region represents a remaining region of the oscillator, a contact area ratio S1 between the vibrating plate and the moving member in the non-driving region is less than a contact area ratio S2 between the vibrating plate and the moving member in the driving region.

Abstract: An acoustic wave device includes a high-acoustic-velocity support substrate, a low-acoustic-velocity film provided on the high-acoustic-velocity support substrate, a piezoelectric layer provided on the low-acoustic-velocity film, and an IDT electrode provided on the piezoelectric layer. An acoustic velocity of a bulk wave propagating through the high-acoustic-velocity support substrate is higher than an acoustic velocity of an acoustic wave propagating through the piezoelectric layer. An acoustic velocity of a bulk wave propagating through the low-acoustic-velocity film is lower than an acoustic velocity of a bulk wave propagating through the piezoelectric layer. The low-acoustic-velocity film has a first portion and a second portion that is located closer to the high-acoustic-velocity support substrate than the first portion. The first and second portions include the same or similar materials.

Abstract: In some embodiments, the present disclosure relates to a method for recovering degraded device performance of a piezoelectric device. The method includes operating the piezoelectric device in a performance mode by applying one or more voltage pulses to the piezoelectric device, and determining that a performance parameter of the piezoelectric device has a first value that has deviated from a reference value by more than a predetermined threshold value during a first time period. During a second time period, the method further includes applying a bipolar loop to the piezoelectric device, comprising positive and negative voltage biases. During a third time period, the method further includes operating the piezoelectric device in the performance mode, wherein the performance parameter has a second value. An absolute difference between the second value and the reference value is less than an absolute difference between the first value and the reference value.

Abstract: An RF triplexer circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled to the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

Abstract: In an embodiment, a multilayer piezoelectric element includes a multilayer piezoelectric body and multiple internal electrodes. The multilayer piezoelectric body has a pair of principal faces in a first-axis direction, a pair of end faces in a second-axis direction crossing at right angles with the first-axis direction and defining the longitudinal direction, and a pair of side faces in a third-axis direction crossing at right angles with the first-axis direction and second-axis direction. The multiple internal electrodes are placed inside the multilayer piezoelectric body and stacked in the first-axis direction. Among the multiple internal electrodes, a center internal electrode placed at the center part of the multilayer piezoelectric body is such that its first cross-sectional shape, as viewed from the third-axis direction, has undulations greater than the undulations of the second cross-sectional shape of the center internal electrode as viewed from the second-axis direction.

Abstract: A bulk-acoustic resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer at least partially covering the first electrode, and including a flat portion disposed in a central region, and an extension portion disposed outside the flat portion and having at least one step portion; an insertion layer disposed on the extension portion; and a second electrode disposed on upper portions of the insertion layer and the piezoelectric layer. The extension portion includes at least one first surface and at least one second surface disposed below an upper surface of the flat portion, and a connection surface connecting an upper surface of the flat portion to the at least one first surface or the at least one second surface, or connecting first surfaces among the at least one first surface to each other or second surfaces among the at least one second surface to each other.

Abstract: An ultrasonic transducer includes a piezoceramic element, a first acoustic matching layer with extending sidewall attaching the lateral surface of the piezoceramic element, wherein the thickness of the first acoustic matching layer is smaller than ¼ wavelength of an ultrasonic wave emitted by the piezoceramic element in the first acoustic matching layer in an operating frequency of the ultrasonic transducer, and the height of the sidewall of the first acoustic matching layer is larger than 1/20 height of the lateral surface of the piezoceramic element, and a second acoustic matching layer attaching the first acoustic matching layer.

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled to the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

Abstract: A filter device includes a filter circuit that is connected to terminals, is defined by a first acoustic wave resonator that has a first frequency band as a pass band, and an additional circuit that is connected in parallel to at least one first acoustic wave resonator between the terminal and the terminal. The additional circuit is defined by a second acoustic wave resonator in which an electromechanical coupling coefficient of the additional circuit is different from an electromechanical coupling coefficient of the filter circuit.

Abstract: A crystal oscillator and a method for fabricating the same is provided. In the method, a crystal package is provided. The crystal package includes a crystal blank and at least one laser-penetrating area. The laser-penetrating area is exposed outside. The crystal package is provided with at least one airtight space therein. At least one getter is formed in the airtight space. The location of the laser-penetrating area corresponds to that of the getter. A laser beam penetrates through the laser-penetrating area to activate the getter, thereby increasing the degree of vacuum of the airtight space.

Abstract: The present disclosure relates to a balanced armature receiver (100) including a housing having a diaphragm comprising a movable paddle (116) disposed in the housing and separating the housing into a back volume (112) and a front volume (110) defined partly by space between a ceiling of the housing and the diaphragm, wherein the paddle is oriented non-parallel to the ceiling. A sound port (142) in the housing acoustically couples the front volume to an exterior of the housing, wherein the sound port is located on an end wall between the diaphragm and the ceiling. A motor disposed in the back volume includes a coil magnetically coupled to an armature having an end portion movably disposed between magnets retained by a yoke and coupled to the paddle.

Abstract: An implantable device for sensing data includes a subcutaneous sensor configured to couple with an implant. The implantable device is operably configured to wirelessly and transcutaneously transmit data sensed by the subcutaneous sensor. The sensor may be powered wirelessly and transcutaneously. Transmission of data and/or power may be provided by ultrasound sound waves. The sensor may be in electrical communication with a piezoelectric transducer configured to receive the ultrasound sound waves.

Abstract: Provided are an MEMS device, a liquid ejecting head, a liquid ejecting apparatus, a manufacturing method of a MEMS device, a manufacturing method of a liquid ejecting head and a manufacturing method of a liquid ejecting apparatus. Provided is a MEMS device that includes a first substrate on which a flexibly deformable thin film member is laminated, a second substrate disposed at an interval with respect to the first substrate, and an adhesion layer that adheres the first substrate to the second substrate, in which an end of the thin film member extends to the outside of the end of the first substrate in an in-plane direction of the first substrate.

Abstract: A hybrid ferroelectric/non-ferroelectric piezoelectric microresonator is disclosed. The hybrid microresonator uses a ferroelectric layer as the actuator as ferroelectric materials typically have higher actuation coefficients than non-ferroelectric piezoelectric materials. The hybrid microresonator uses a non-ferroelectric piezoelectric layer as the sensor layer as non-ferroelectric piezoelectric materials typically have higher sensing coefficients than ferroelectric materials. This hybrid microresonator design allows the independent optimization of actuator and sensor materials. This hybrid microresonator design may be used for bulk acoustic wave contour mode resonators, bulk acoustic wave solidly mounted resonators, free-standing bulk acoustic resonators, and piezoelectric transformers.

Abstract: A liquid ejecting head includes a flow path forming substrate in which a pressure generating chamber which communicates with a nozzle which ejects a liquid is formed by a partitioning wall, and a piezoelectric actuator in which a first electrode, a piezoelectric layer, and a second electrode are laminated, in which the piezoelectric layer includes a region which is interposed between the first electrode and the second electrode in a lamination direction, and in which when viewed in plan view from the lamination direction, the region overlaps at least a portion of the edges of each side of an opening of the pressure generating chamber on the piezoelectric actuator side and does not overlap one of the first electrode and the second electrode in at least a portion of the opening.

Abstract: A multilayer substrate includes a stacked body of insulating base material layers and conductor patterns on the insulating base material layers. A thickness adjustment base material layer includes a frame portion, an opening portion inside the frame portion, and an island shaped portion inside the frame portion, and connection portions to connect the island shaped portion to the frame portion. The conductor patterns, in a stacking direction of the insulating base material layers, are wound around the island shaped portion. A line width of the connection portions is smaller than the width of the island shaped portion connected to the frame portion through the connection portions. An area overlapped with the conductor patterns is larger in the opening portion than in the frame portion and the island shaped portion.

Abstract: A liquid ejection head is provided which comprises a channel member and a housing. The channel member comprises a first surface, which includes one or more ejection ports configured to eject liquid from the first channel member, and a second surface different from the first surface. The housing is disposed on the second surface and comprises one or more electric circuits. The second surface of the channel member comprises a first opening located outside of the housing and is configured to receive the liquid supplied to the one or more ejection ports.

Abstract: Acoustic resonator devices and filters. An acoustic resonator includes a substrate and a lithium niobate plate. A back surface of the lithium niobate plate faces the substrate. A portion of the lithium niobate plate forms a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is on a front surface of the lithium niobate plate such that interleaved fingers of the IDT are on the diaphragm. The IDT and the lithium niobate plate are configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic mode within the diaphragm. Euler angles of the lithium niobate plate are [0°, ?, 0° ], where ? is greater than or equal to 40° and less than or equal to 70°.