Abstract: A device for producing electricity. The device includes a substrate having spaced apart first and second surfaces and doped a first dopant type, first semiconductor material layers disposed atop the first substrate surface and doped the first dopant type, and second semiconductor material layers disposed atop the first semiconductor material layers and doped a second dopant type. A first contact is in electrical contact with the second substrate surface or in electrical contact with one of the first semiconductor material layers. A beta particle source emits beta particles that penetrate into the semiconductor material layers; the beta particle source is proximate the uppermost layer of the second plurality of semiconductor material layers. A second contact is in electrical contact with one of the second plurality of semiconductor material layers. In one embodiment, bi-polar contacts (the first and second contacts) are co-located on each major face of the device.

Abstract: A device for producing electricity. The device includes a substrate having spaced apart first and second surfaces and doped a first dopant type, first semiconductor material layers disposed atop the first substrate surface and doped the first dopant type, and second semiconductor material layers disposed atop the first semiconductor material layers and doped a second dopant type. A first contact is in electrical contact with the second substrate surface or in electrical contact with one of the first semiconductor material layers. A beta particle source emits beta particles that penetrate into the semiconductor material layers; the beta particle source is proximate the uppermost layer of the second plurality of semiconductor material layers. A second contact is in electrical contact with one of the second plurality of semiconductor material layers. In one embodiment, bi-polar contacts (the first and second contacts) are co-located on each major face of the device.

Abstract: According to one embodiment, a device includes a first electrode, a second electrode spaced from the first electrode, a well extending between the first electrode and the second electrode, one or more chalcogens in the well, and at least one halogen mixed with the one or more chalcogens in the well. In addition, the chalcogens are selected from the group consisting of sulfur, selenium, tellurium, and polonium.

Abstract: A method of modifying a high-resistivity substrate so that the substrate may be electrostatically clamped to a chuck is disclosed. The bottom surface is implanted with a resistivity-reducing species. In this way, resistivity of the bottom surface of the substrate may be greatly reduced. In some embodiments, to implant the bottom surface, a coating is applied to the top surface. After application of the coating, the substrate is flipped so that the front surface contacts the top surface of the chuck. The ions are then implanted into the exposed bottom surface to create the low resistivity layer. The resistivity of the low resistivity layer proximate the bottom surface after implant may be less than 1000 ohm-cm. Once the bottom surface has been implanted, the substrate may be processed conventionally. The low resistivity layer may later be removed by wafer backside thinning processes.

Abstract: Provided is a radioisotope battery. A radioisotope battery according to exemplary embodiments may include: a substrate; a shield layer disposed on the substrate and including a first material; a source layer embedded in the shield layer and including a second material which is a radioisotope of the first material; a PN junction layer on the shield layer and the source layer; and a window layer between the PN junction layer and the source layer.

Abstract: Provided is an AlGaN unipolar carrier solar-blind ultraviolet detector that is based on the AlGaN polarization effect and that uses the double heterojunction of the p-AlzGa1-zN/i-AlyGa1-yN/n-AlxGa1-xN (0.45=<x,z<y) as the main structure of the detector. It makes full use of the polarization built-in electric field pointing from n-type AlGaN to p-type AlGaN to enhance the electric field strength of the i-type absorption region and enhance the efficiency of carrier absorption and separation. At the same time, the valence band step of the p-AlzGa1-zN/i-AlyGa1-yN heterojunction is used to effectively restrict holes from entering the absorption region to recombine with electrons, thereby increasing the carrier lifetime. Furthermore, during device manufacturing the structure is such designed that makes it difficult for photo-generated holes to participate in the photoconductivity so as to realize unipolar conduction of electrons, thereby obtaining a high response speed and high gain current.

Abstract: A device for producing electricity. The device includes a substrate having spaced apart first and second surfaces and doped a first dopant type, first semiconductor material layers disposed atop the first substrate surface and doped the first dopant type, and second semiconductor material layers disposed atop the first semiconductor material layers and doped a second dopant type. A first contact is in electrical contact with the second substrate surface or in electrical contact with one of the first semiconductor material layers. A beta particle source emits beta particles that penetrate into the semiconductor material layers; the beta particle source is proximate the uppermost layer of the second plurality of semiconductor material layers. A second contact is in electrical contact with one of the second plurality of semiconductor material layers. In one embodiment, bi-polar contacts (the first and second contacts) are co-located on each major face of the device.

Abstract: Provided herein is a radiation powered device comprising a semiconductor comprising a diamond material.

Abstract: A device for producing electricity. The device includes a substrate having spaced apart first and second surfaces and doped a first dopant type, first semiconductor material layers disposed atop the first substrate surface and doped the first dopant type, and second semiconductor material layers disposed atop the first semiconductor material layers and doped a second dopant type. A first contact is in electrical contact with the second substrate surface or in electrical contact with one of the first semiconductor material layers. A beta particle source emits beta particles that penetrate into the semiconductor material layers; the beta particle source is proximate the uppermost layer of the second plurality of semiconductor material layers. A second contact is in electrical contact with one of the second plurality of semiconductor material layers. In one embodiment, bi-polar contacts (the first and second contacts) are co-located on each major face of the device.

Abstract: Various embodiments of a nuclear radiation particle power converter and method of forming such power converter are disclosed. In one or more embodiments, the power converter can include first and second electrodes, a three-dimensional current collector disposed between the first and second electrodes and electrically coupled to the first electrode, and a charge carrier separator disposed on at least a portion of a surface of the three-dimensional current collector. The power converter can also include a hole conductor layer disposed on at least a portion of the charge carrier separator and electrically coupled to the second electrode, and nuclear radiation-emitting material disposed such that at least one nuclear radiation particle emitted by the nuclear radiation-emitting material is incident upon the charge carrier separator.

Abstract: A method of producing an integrated circuit-type active radioisotope battery, the method comprising exposing at least a portion of an electronically functional, unactivated integrated circuit-type battery to radiation to convert transmutable material in the unactivated battery to a radioisotope thereby producing an active cell and thus the integrated circuit-type active radioisotope battery.

Abstract: In a cardiac pacing system, a leadless cardiac pacemaker is configured for implantation in electrical contact with a cardiac chamber and configured for leadless pacing.

Abstract: A writing implement and system using that writing implement are disclosed. The writing implement includes a pen having an elongated body with a plurality of light sources arranged around an outer surface of the body. Each light source has a unique identity. A pen controller that activates each light source to emit light such that the identity of that source can be ascertained by a detector external to the pen. The number of light sources is greater than or equal to 2, and the light sources are arranged such that at least one of the light sources is visible to a detector external to the pen at any time. The detector can then determine the angle of rotation of the pen relative to a fixed reference direction.

Abstract: A power converter comprises a first die and a second die. Each die comprises a semiconductor substrate comprising a junction for converting nuclear radiation particles to electrical energy, the junction of each semiconductor substrate comprising a first side and a second side, a first electrode comprising a nuclear radiation-emitting radioisotope deposited on the semiconductor substrate, the first electrode being electrically connected to the first side of the junction, and a second electrode deposited on the semiconductor substrate, the second electrode being electrically connected to the second side. A bond is formed between one of the first electrode or the second electrode of the first die and one of the first electrode or the second electrode of the second die, wherein the bond forms an electrical contact between the bonded electrodes.

Abstract: One example is a betavoltaic cell that has been fabricated using a semiconductor that includes, but is not limited to, Silicon Carbide (SiC), Silicon (Si), Gallium Arsenide (GaAs), Indium Gallium Arsenide (InGaAs), Gallium Nitide (GaN), Gallium Phosphide (GaP), or Diamond, and uses through wafer via holes or other fabrication techniques to form both positive (+ve) and negative (?ve) contacts on the front and back sides of the cell. In another example, several of these cells with +ve and ?ve contacts on the front and back sides of the cell are arranged vertically and/or horizontally to form customized parallel and/or series combinations that produce a close packed, energy dense betavoltaic composite unit, with increased power outputs relative to a single cell. In another example, tritium or a metal tritide is used as the radioisotope source for the cells.

Abstract: An apparatus includes a beta particle source configured to provide beta particles. The apparatus also includes a diamond moderator configured to convert at least some of the beta particles into lower-energy electrons. The apparatus further includes a PN junction configured to receive the electrons and to provide electrical power to a load. The diamond moderator is located between the beta particle source and the PN junction. The apparatus could also include an electron amplifier configured to bias the diamond moderator. For example, the electron amplifier could be configured to receive some of the beta particles and to generate additional electrons that bias the diamond moderator. Also, the diamond moderator can be configured to receive the beta particles having energies that are spread out over a wider range including higher energies, and the diamond moderator can be configured to provide the electrons concentrated in a narrower range at lower energies.

Abstract: An electric cell comprises layers of moderating material 1 & 8, nuclear fuel 2 & 7, cathode 3, anode 6, and semiconductor junction layers 4 & 5 adjacently stacked one above another. Ionic compounds with high proton numbers are used to form the semiconductor junction layers 4 & 5. Highly energetic heavy ion daughter nuclides from the nuclear fuel layers 2 & 7 penetrate into the semiconductor junction layers 4 & 5. The collision of heavy ions with the valence band electrons in the semiconductor junction layers 4 & 5 creates electron-hole pairs which provide electricity. If the semiconductor junction layers 4 & 5 are fissile, then the nuclear fuel layers 2 & 7 can be removed.

Abstract: A power converter comprises a nuclear radiation emitter having a first side and a second side, wherein the nuclear radiation emitter comprises a radiation-emitting radioisotope, a plurality of semiconductor substrates disposed over the first side of the nuclear radiation emitter, wherein each of the plurality of semiconductor substrates comprises a junction for converting nuclear radiation particles to electrical energy, and at least one high-density layer, wherein the high density layer has a density that is higher than a density of the semiconductor substrates, and wherein the high-density layer is disposed between two of the plurality of semiconductor substrates.

Abstract: According to one embodiment, an energy conversion device comprises a nuclear battery, a light source coupled to the nuclear battery and operable to receive electric energy from the nuclear battery and radiate electromagnetic energy, and a photocell operable to receive the radiated electromagnetic energy and convert the received electromagnetic energy into electric energy. The nuclear battery comprises a radioactive substance and a collector operable to receive particles emitted by the radioactive substance.

Abstract: Disclosed herein is a solar light-radioisotope hybrid battery, which is used as a solar battery and a radioisotope battery when sunlight is applied, and is used as a radioisotope battery when sunlight is not applied. The solar light-radioisotope hybrid battery includes: a semiconductor layer producing an electron-hole pair; and a radioisotope layer formed on the semiconductor layer and emitting a radioactive ray to the semiconductor layer.

Abstract: A betavoltaic power source. The betavoltaic power source comprises a source of beta particles, a substrate with shaped features defined therein and a InGaP betavoltaic junction disposed between the source of beta particles and the substrate, and also having shaped features therein responsive to the shaped features in the substrate, the InGaP betavoltaic junction device for collecting the beta particles and for generating electron hole pairs responsive thereto.

Abstract: This invention relates to a radioisotope battery and a method of manufacturing the same, wherein manufacturing the radioisotope battery and shielding radiation emitted from the radioisotope Ni-63 from the outside are achieved simultaneously. This radioisotope battery includes a semiconductor layer, a seed layer formed on the semiconductor layer, a radioisotope layer formed on the seed layer, and a radiation shielding layer formed on the radioisotope layer and for shielding radiation of the radioisotope layer form the outside.

Abstract: A betavoltaic power source for mobile devices and mobile applications includes a stacked configuration of isotope layers and energy conversion layers. The isotope layers have a half-life of between about 0.5 years and about 5 years and generate radiation with energy in the range from about 15 keV to about 200 keV. The betavoltaic power source is configured to provide sufficient power to operate the mobile device over its useful lifetime.

Abstract: A layer I vanadium-doped PIN-type nuclear battery, including from top to bottom a radioisotope source layer(1), a p-type ohm contact electrode(4), a SiO2 passivation layer(2), a SiO2 compact insulation layer(3), a p-type SiC epitaxial layer(5), an n-type SiC epitaxial layer(6), an n-type SiC substrate(7) and an n-type ohm contact electrode(8). The doping density of the p-type SiC epitaxial layer(5) is 1×1019 to 5×1019 cm3, the doping density of the n-type SiC substrate(7) is 1×1018 to 7×1018 cm3. The n-type SiC epitaxial layer(6) is a low-doped layer I formed by injecting vanadium ions, with the doping density thereof being 1×1013 to 5×1014 cm3. Also provided is a preparation method for a layer I vanadium-doped PIN-type nuclear battery. The present invention solves the problem that the doping density of layer I of the exiting SiC PIN-type nuclear battery is high.

Abstract: Primary voltaic sources include nanofiber Schottky barrier arrays and a radioactive source including at least one radioactive element configured to emit radioactive particles. The arrays have a semiconductor component and a metallic component joined at a metal-semiconductor junction. The radioactive source is positioned proximate to the arrays such that at least a portion of the radioactive particles impinge on the arrays to produce a flow of electrons across the metal-semiconductor junction. Methods of producing voltaic sources include reacting at least one carbon oxide and a reducing agent in the presence of a substrate comprising a catalyst to form a solid carbon product over the substrate. Material is disposed over at least a portion of the solid carbon product to form a nanofiber Schottky barrier array. A radioactive source is disposed adjacent the nanofiber Schottky barrier array.

Abstract: A betavoltaic power source for transportation devices and applications is disclosed, wherein the device having a stacked configuration of isotope layers and energy conversion layers. The isotope layers have a half-life of between about 0.5 years and about 5 years and generate radiation with energy in the range from about 15 keV to about 200 keV. The betavoltaic power source is configured to provide sufficient power to operate the transportation device over its useful lifetime.

Abstract: A betavoltaic power source for mobile devices and mobile applications includes a stacked configuration of isotope layers and energy conversion layers. The isotope layers have a half-life of between about 0.5 years and about 5 years and generate radiation with energy in the range from about 15 keV to about 200 keV. The betavoltaic power source is configured to provide sufficient power to operate the mobile device over its useful lifetime.

Abstract: An apparatus includes a beta particle source configured to provide beta particles. The apparatus also includes a diamond moderator configured to convert at least some of the beta particles into lower-energy electrons. The apparatus further includes a PN junction configured to receive the electrons and to provide electrical power to a load. The diamond moderator is located between the beta particle source and the PN junction. The apparatus could also include an electron amplifier configured to bias the diamond moderator. For example, the electron amplifier could be configured to receive some of the beta particles and to generate additional electrons that bias the diamond moderator. Also, the diamond moderator can be configured to receive the beta particles having energies that are spread out over a wider range including higher energies, and the diamond moderator can be configured to provide the electrons concentrated in a narrower range at lower energies.

Abstract: A micro-scale power source and method includes a semiconductor structure having an n-type semiconductor region, a p-type semiconductor region and a p-n junction. A radioisotope provides energy to the p-n junction resulting in electron-hole pairs being formed in the n-type semiconductor region and p-type semiconductor region, which causes electrical current to pass through p-n junction and produce electrical power.

Abstract: A multilayer device for producing electricity. The device comprising a betavoltaic source layer for generating beta particles, and at least three semiconductor layers each having a bandgap substantially similar to a band gap of the other layers, the at least three layers comprising a doped top layer, an undoped intermediate layer and a doped bottom layer, wherein the top and the bottom layers are doped with opposite-type dopants, and wherein the top layer is closer to the betavoltaic source layer than the bottom layer.

Abstract: To increase total power in a betavoltaic device, it is desirable to have greater radioisotope material and/or semiconductor surface area, rather than greater radioisotope material volume. An example of this invention is a high power density betavoltaic battery. In one example of this invention, tritium is used as a fuel source. In other examples, radioisotopes, such as Nickel-63, Phosphorus-33 or promethium, may be used. The semiconductor used in this invention may include, but is not limited to, Si, GaAs, GaP, GaN, diamond, and SiC. For example (for purposes of illustration/example, only), tritium will be referenced as an exemplary fuel source, and SiC will be referenced as an exemplary semiconductor material. Other variations and examples are also discussed and given.

Abstract: A betavoltaic battery having layers of fissile radioisotopes 8, moderating material 7, beta-decaying radioisotopes 6, and semiconductor diode 4 & 5 adjacently stacked one above another, is proposed. Neutrons produced by the chain reaction in the fissile radioisotope 8 are slowed down by the moderating material 7 before penetrating into the layer of beta-decaying radioisotope 6 to cause fission. Beta particles produced from the fission of beta-decaying radioisotopes 6 create electron-hole pairs in the semiconductor diode 4 & 5. Electrons and holes accumulate at the cathode 9 and anode 2 respectively, producing an electromotive force. Because beta particles are produced from neutron-induced fission, instead of from beta decay, this betavoltaic battery is able to generate substantially more power than conventional betavoltaic batteries.

Abstract: Self powered microelectromechanical oscillators are provided for various applications.

Abstract: One example is a betavoltaic cell that has been fabricated using a semiconductor that includes, but is not limited to, Silicon Carbide (SiC), Silicon (Si), Gallium Arsenide (GaAs), Indium Gallium Arsenide (InGaAs), Gallium Nitide (GaN), Gallium Phosphide (GaP), or Diamond, and uses through wafer via holes or other fabrication techniques to form both positive (+ve) and negative (?ve) contacts on the front and back sides of the cell. In another example, several of these cells with +ve and ?ve contacts on the front and back sides of the cell are arranged vertically and/or horizontally to form customized parallel and/or series combinations that produce a close packed, energy dense betavoltaic composite unit, with increased power outputs relative to a single cell. In another example, tritium or a metal tritide is used as the radioisotope source for the cells.

Abstract: A system and method for a self-charging battery cell are provided in which beta emissions from a Strontium-90 source are obtained by a sensor device and converted into electric energy. In embodiments, a scintillation device is used to intake emissions from a Strontium-90 source, and consequently emit a light or plurality of light flashes. A sensor device, e.g., a photodiode, is utilized to convert the light or plurality of light flashes into electric voltage, current and/or energy.

Abstract: A radioisotope power sources that includes radioisotope nanoparticles and scintillator materials. An embodiment of the radioisotope power source includes radioisotope nanoparticles suspended within a polycrystalline scintillator; additional polycrystalline scintillator at least partially surrounding the polycrystalline scintillator with the radioisotope nanoparticles; and a photovoltaic device in light communication with the surrounding polycrystalline scintillator. A system that employs the radioisotope power source and a method of generating an electrical current are also disclosed. The present invention has been described in terms of specific embodiment(s), and it is recognized that equivalents, alternatives, and modifications, aside from those expressly stated, are possible and within the scope of the appending claims.

Abstract: Provided are a stack-type beta battery generating a current from a beta source and a method of manufacturing the same. The method includes forming an oxide mask in a predetermined pattern on a surface of a substrate, forming a plurality of recesses by etching a region without the oxide mask from the substrate, removing the oxide mask and forming a PN-junction layer on the substrate, forming a first electrode on the PN-junction layer and forming a second electrode on another surface of the substrate, and forming a unit module by stacking a radioisotope layer on the PN-junction layer, the radioisotope layer emitting a beta ray. The beta battery can improve efficiency per unit area than a single layered beta battery by the number of stacked PN-junctions, and the process is simpler than a pore-forming process using DRIE, and manufacturing costs and time can be saved.

Abstract: We introduce a new technology for Manufactureable, High Power Density, High Volume Utilization Nuclear Batteries. Betavoltaic batteries are an excellent choice for battery applications which require long life, high power density, or the ability to operate in harsh environments. In order to optimize the performance of betavoltaic batteries for these applications or any other application, it is desirable to maximize the efficiency of beta particle energy conversion into power, while at the same time increasing the power density of an overall device. Various devices and methods to solve the current industry problems and limitations are presented here.

Abstract: The present invention is directed to an encapsulated ?? particle emitter that comprises a sol-gel derived core that comprises a ??-emitting radioisotope and an encapsulant enclosing the core through which at least some of the ?? emissions from the ??-emitting radioisotope pass, wherein the encapsulant comprises a substrate and a cover and at least a portion of the encapsulant is electrically conductive, and a method for making the same. Additionally, the present invention is directed to a capacitor comprising such an encapsulated ?? particle emitter and a method of performing work with such a capacitor.

Abstract: The invention relates to an electric generator sensitive to ionizing radiation produced by the reverse mounting of a diode in parallel between a reverse polarization stack and a pulse converter or only with a pulse converter. A generator is thus provided that can be used inside a spacecraft or in the atmosphere by using cosmic radiation, or in an environment containing ionizing radiation such as in the medical or nuclear fields, and which is preferably directly mounted on a printed circuit board receiving a remote sensor.

Abstract: High aspect ratio micromachined structures in semiconductors are used to improve power density in Betavoltaic cells by providing large surface areas in a small volume. A radioactive beta-emitting material may be placed within gaps between the structures to provide fuel for a cell. The pillars may be formed of SiC. In one embodiment, SiC pillars are formed of n-type SiC. P type dopant, such as boron is obtained by annealing a borosilicate glass boron source formed on the SiC. The glass is then removed. In further embodiments, a dopant may be implanted, coated by glass, and then annealed. The doping results in shallow planar junctions in SiC.

Abstract: Apparatus and method for harnessing heat energy uses at least one thermally conductive material in communication with a heat collecting material in order to conduct heat from a first region of the heat collecting material to a second region of the heat collecting material. The thermally conductive material can be interspersed within the heat collecting material and/or applied externally to the heat collecting material. Heat drawn from the second portion can be stored and/or converted into another form of energy for providing power to a structure or vehicle. Conversion can use the differential between the temperature of the second region and the temperature of a cold sink. Additional heat can be added to the heat collecting material.

Abstract: High aspect ratio micromachined structures in semiconductors are used to improve power density in Betavoltaic cells by providing large surface areas in a small volume. A radioactive beta-emitting material may be placed within gaps between the structures to provide fuel for a cell. The pillars may be formed of SiC. In one embodiment, SiC pillars are formed of n-type SiC. P type dopant, such as boron is obtained by annealing a borosilicate glass boron source formed on the SiC. The glass is then removed. In further embodiments, a dopant may be implanted, coated by glass, and then annealed. The doping results in shallow planar junctions in SiC.

Abstract: A surface-plasmon-coupled thermoelectric apparatus includes a first surface-plasmon substrate and a thermoelectric substrate electrically coupled to a plurality of electrodes. The substrates are electrically isolated from each other, and a first face of the thermoelectric substrate opposes a first face of the first surface-plasmon substrate to define a phonon insulating gap. A method of transferring thermal energy across the phonon insulating gap includes creating a first surface-plasmon polariton at the first surface-plasmon substrate when the first surface-plasmon substrate is coupled to a first thermal reservoir. Also included is creating a nonequilibrium state between the electron temperature and the phonon temperature at a first face of the thermoelectric substrate, when a second face of the thermoelectric substrate is coupled to a second thermal reservoir.

Abstract: A layered battery having a nuclear-cored energy source. The layered battery is created by spraying P and N layers on a plurality of nuclear-cored energy producing spheres that are in the form of a powder. The spraying of the P and N layers forms a sheet of material having a P layer and an N layer that is used as a battery. This sheet is then disposed within a casing having a first and second end. The P layer is connected to the first end of the case forming an anode and the N layer is connected to the second end of the case forming an electrode. Thus a disposable sized battery is formed that has a nuclear cored energy source.

Abstract: A micro-scale power source and method includes a semiconductor structure having an n-type semiconductor region, a p-type semiconductor region and a p-n junction. A radioisotope provides energy to the p-n junction resulting in electron-hole pairs being formed in the n-type semiconductor region and p-type semiconductor region, which causes electrical current to pass through p-n junction and produce electrical power.

Abstract: A solar-paneled windmill is provided having aerodynamic fan blades provided with solar panels. The windmill produces electricity using wind energy and solar energy. In another embodiment, magnets are provided to the solar-paneled windmill fan blades to generate magnetic fields to increase the amount of electrical energy produced.

Abstract: An apparatus and method for generating electrical power from the decay process of a radioactive material is disclosed, wherein a volume of radioactive material and a junction region are enclosed in a cell. The junction region is formed by appropriate construction of a number of p-type and n-type dopant sites. At least a portion of one of the junction regions is disposed within a porous region having an aspect ratio of greater than about 20:1, and disposed at an angle of greater than about 55° measured relative to the surface area in which it is formed. The dimensions and shapes of the macroporous regions and the improved junction region surface area available for collecting charged particles emitted during a radioactive decay series permit an improved current to be derived from the apparatus than would otherwise be expected given its external dimensions.

Abstract: A micro-power generator, comprises an electrically insulating substrate; a semiconductor layer affixed to the substrate; electrodes affixed to the semiconductor layer for collecting electrical charges emitted by a radioisotope source; a radio-isotope source interposed between the electrodes; and electrical circuitry operably coupled to the electrodes for transforming the electrical charges into a controlled output.

Abstract: A photothermal power generation device designed to heat an emitter receives a supply of fuel and air, burns the fuel to produce combustion gas, and converts light emitted from the emitter into electric power by means of a photoelectric conversion element. The device is provided with a flow resistance adjusting unit for adjusting a flow resistance of the combustion gas in the emitter in accordance with a state of combustion gas, a combustor fire vent adjusting unit for adjusting the shapes of, or a number of, fire vents formed in the combustor in accordance with a required output, or a discharge state adjusting unit for adjusting a discharge state of exhaust gas in accordance with a state of the combustion gas. This photothermal power generation device provides uniform light-emitting intensity and enhances power generation efficiency.