Abstract: A method for fabricating a micro-field emission gun including the steps of providing an insulator slab, formed with a penetrating hole acting as a passage of an electron beam, upon a gate electrode of the micro-field emission gun, such that the penetrating hole is aligned with an emitter of the micro-field emission gun, bonding an insulator slab upon the gate electrode by means of an anodic bonding process, and providing an acceleration electrode on the insulator slab such that the acceleration electrode covers a surface of said insulator slab facing away from said gate electrode, except for a passage of the electron beam.

Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer contains chemical elements constituting the electron supply layer and has a film thickness of 50 nm or greater. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.

Abstract: An electron source comprises a substrate, a row wire and a column wire disposed on the substrate, and an electron-emitting element connected to both the row and column wires. The electron-emitting region of the electron-emitting element is surrounded by one of both the row and column wires.

Abstract: A ceramic substrate for mounting a field emission cathode is secured on the lower surface of a metal flange for assembly of an electron lens of a cathode ray tube, and the mounting position of the field emission cathode on the ceramic substrate is determined with reference to the metal flange.

Abstract: A sealed lamp unit for a three-way fluorescent lamp system comprises first and second lamp electrodes located at respective end points of, and extending into, the sealed lamp unit. The sealed lamp unit comprises at least one gas, which breaks-down when an electrical voltage potential is created within the sealed lamp unit. A third lamp electrode is located between the first and second lamp electrodes and extends into the sealed lamp unit. A brightness level of light output from the sealed lamp unit is a function of energizing selected electrodes. A color of the light is independent of the brightness level. A first extended wire connection is electrically connected between the first and second lamp electrodes. A first capacitive impedance, electrically connected in series along the first extended wire connection, limits a current flow through the first extended wire connection. A breakdown voltage path within the sealed lamp unit is modified as a function of a position of the third lamp electrode.

Abstract: A field emission device (400) includes a plastically-deformable, ceramic, stamped substrate (200) made from a plastically deformable ceramic, which in the preferred embodiment includes a calendered tape. The plastically-deformable, ceramic, stamped substrate (200) includes first and second opposed surfaces (202, 204) and defines apertures (206) in which are formed extraction electrodes (410). The field emission device (400) further includes an electron-emissive layer (418) being formed on the first opposed surface (202). Cathodes (420) are disposed on the electron-emissive layer (418) and cross the extraction electrodes (410) at an angle of 90.degree.. A method for fabricating said field emission device (400) includes stamping a layer (100) of the softened calendered tape with a die (300) to define the apertures (206) and grooves (208, 212, 214).

Abstract: A method of manufacturing a field emission element includes the steps of: forming a surface insulating layer including a conductive gate film on a substrate; forming a hole in the surface insulating layer by partially removing the surface insulating layer; forming a side spacer on an inner wall of the hole and forming a gate hole in the conductive gate film, the side spacer serving as a first sacrificial film; forming a second sacrificial film on surfaces of the surface insulating layer and the side space and on a bottom surface of the gate hole, to a thickness so as to form a flat upper surface area of the second sacrificial film above the gate hole; forming a conductive first emitter film on a whole surface of the second sacrificial film; forming a conductive second emitter film by disposing a conductive ultra-fine particle group on the first emitter film and baking the ultra-fine particle group; and exposing a tip portion of the second emitter film on a side of the flat upper surface area of the first emit

Abstract: A field emission device includes a field emission cathode electrode having a cusp, a first insulating layer on the field emission cathode electrode excluding a portion over the cusp, a first electrode on the first insulating layer, a second insulating layer on the first electrode, a second electrode on the second insulating layer, a third insulating layer on the second electrode, and a silicon substrate on the third insulating layer.

Abstract: According to one aspect of the invention, a field emission display is provided comprising: an anode; a phosphor screen located on the anode; a cathode; an evacuated space between the anode and the cathode; an emitter located on the cathode opposite the phosphor; wherein the emitter comprises an electropositive element both in a body of the emitter and on a surface of the emitter. According to another aspect of the invention a process for manufacturing an FED is provided comprising the steps of: forming an emitter comprising an electropositive element in the body of the tip; positioning the emitter in opposing relation to a phosphor display screen; creating an evacuated space between the emitter tip and the phosphor display screen; and causing the electropositive element to migrate to the an emission surface of the emitter.

Abstract: The present invention provides a micro power switch comprising a cold cathode for emitting electrons, an anode for capturing the electrons emitted from the cold cathode, and a control electrode for controlling an amount of the electrons emitted from the cold cathode, wherein the cold cathode is made of material having a smaller electron emission barrier than the control electrode, the anode is applied with a positive potential in relation to the cold cathode, and the control electrode is applied with a potential equal to or lower than a potential of the cold cathode.

Abstract: An image forming apparatus having a plurality of electron emitting devices and luminescent members are arranged into a matrix formed on one surface of a substrate. As rows of electron emitting devices are successively driven, each luminescent member emits light according to a voltage applied to it or other members in accordance with an image information signal when irradiated with a light beam from one of the electron emitting devices mated with it.

Abstract: A field emission lamp, of either a diode or triode structure has a packaging whereby electrical access to the various electrodes of the lamp is provided through the rear or underside of the field emission device so that the individual lamps can be placed in close proximity to each other.

Abstract: A method of fabricating row lines over a field emission array. The method employs only two mask steps to define row lines and pixel openings through selected regions of each of the row lines. In accordance with the method of the present invention, a layer of conductive material is disposed over a substantially planarized surface of a grid of semiconductive material. A layer of passivation material is then disposed over the layer of conductive material. In one embodiment of the method, a first mask may be employed to remove passivation material and conductive material from between adjacent rows of pixels and from substantially above each of the pixels of the field emission array. A second mask is employed to remove semiconductive material from between the adjacent rows of pixels. In another embodiment of the method, a first mask is employed to facilitate removal of passivation material, conductive material, and semiconductive material from between adjacent rows of pixels of the field emission array.

Abstract: An electron beam generating device has at least one electron emitting element and at least one modulation electrode on a substrate. The modulation electrode may be provided on the same or reverse side of the substrate as or to the side bearing the electron emitting element. The electron emitting element is constituted of a lower potential electrode, a higher potential electrode and an electron emitting portion between the electrodes. The lower potential electrode has a different dimension than the higher potential electrode, or the substrate region bearing the electron emitting element has a different thickness than the other region, depending on the type of arrangement of the electron emitting element and the modulation electrode.

Abstract: An electron-emitting device utilizes an emitter electrode (12) shaped like a ladder in which a line of emitter openings (18) extend through the electrode. In fabricating the device, the emitter openings can be utilized to self-align certain edges, such as edges (38C) of a focusing system (37), to other edges, such as edges (28C) of control electrodes (28), to obtain desired lateral spacings. The self-alignment is typically achieved with the assistance of a backside photolithographic exposure operation. The ladder shape of the emitter electrode also facilitates the removal of short-circuit defects involving the electrode.

Abstract: A flat picture tube including a glass vessel which is internally evacuated, a heater installed inside the glass vessel for emitting heat electrons, a plurality of anodes extended in one direction and disposed at a constant interval on one inner plane of the glass vessel for absorbing the heat electrons, a plurality of fluorescent units disposed on the plurality of anodes in a matrix shape for radiating depending on heat electrons absorbed to the anodes, and a plurality of control grids extended perpendicularly to the anode extended direction and disposed in a constant interval for controlling the absorption of the heat electrons toward the anodes operates in a matrix digital method and does not necessitate an electron gun nor deflection yokes, thereby reducing the volume thereof. In the case of a 20 inch picture tube, the maximum thickness thereof is only 5 cm so that it can be adopted for a wall television. Also, since a high-voltage power is not required, the overall power consumption is lowered.

Abstract: An electron emitter (2) has a semiconductor substrate (20) doped with an n-type region (21). A diamond layer (24) is doped by ion implantation with a p-type dopant to form a graded dopant profile region (27) that increases away from the upper surface of the diamond layer (24) and a thin insulating region (28) separating the p-type region (27) from the n-type region (21). The emitter (2) has a first electrical contact (23) on a lower surface of the substrate (20) and a second electrical contact (25) on the upper surface of the diamond layer (24) such that a voltage can be applied across the emitter (2) to cause tunneling of electrons from the n-type region (21) through the insulating region (28) into the p-type region (27), causing emission of electrons from an exposed surface (29).

Abstract: A field emission display includes a substrate with a plurality of cathode layers provided thereon. A plurality of micro tips are provided on each of the cathode layers. A plurality of gate insulating layers are also provided on the cathode layers, each of the gate insulating layers having a plurality of holes for accommodating each unit of the micro tips. A plurality of gate electrodes are provided on the gate insulating layers, each of the gate electrodes having a plurality of holes corresponding to each hole of the plurality of gate insulating layers, each of the plurality of gate insulating layers and each of the plurality of gate electrodes being alternately provided on each other.

Abstract: A method of manufacturing a side glass for a vacuum fluorescent display is provided wherein a glass is cut to a predetermined length in accordance with the size of the vacuum fluorescent display. The glass is then bent to coincide two ends of the glass in accordance with the shape of the vacuum fluorescent display, and the two ends of the glass are adhered to one another. A sealing frit is applied on the upper side of the glass, and is plasticized and cured.

Abstract: Described are methods for making, and resultant structures of, a field emission display with soft luminescence and a comfortable image for a viewer of the display. The field emission display is formed with a baseplate and an opposing face plate. Field emission microtips are formed in openings in a conductive and insulating layer on the baseplate. An anode is formed on either the faceplate, or on the conductive layer surrounding each opening. Phosphorescent material is formed over the anode, A blocking layer is formed between the phosphor and the faceplate, such that during operation of the display direct light emission from the phosphor is blocked, resulting in indirect phosphorescence and a more comfortable display image. An optional reflective layer may be added over the conductive layer to increase phosphorescence.

Abstract: MUX and DEMUX circuits using a photo gate transistor having a pair of thin film electrodes respectively serving as emission and collector electrodes. When photons with at least critical energy are irradiated onto the emission electrode, electrons are emitted from the emission electrode, so that the associated photo gate transistor can carry out a gating operation. The MUX circuit divides a plurality of electrical signals in a time division manner so that the transmission of those signals can be carried out through a single transmission line. The DEMUX circuit recovers an original signal from signals transmitted in a time division manner via a single transmission line. Input signals are received to emission electrodes while being limited in voltage level by input resistor pairs. An optical source irradiates photons to an emission electrode in sync with the application of an input signal. By the irradiation of photons, the emission electrode emits electrons which are transmitted to a collector electrode.

Abstract: An electron gun includes a field emission cold cathode (1) having a first electric potential, a primary gate electrode (2) having a first opening around the top of the cathode (1) and having a second electric potential which is higher than the first electric potential for causing an electron emission from the top of the cathode (1), and a second gate electrode (3) having a second opening around the top of the cathode (1) and having a third electric potential which is higher than the first electric potential and lower than the second electric potential, wherein a first voltage defined as a difference between the first and the second electric potentials varies in proportion to a second voltage defined as a difference between the first and the third electric potentials so as to provide a current-voltage characteristic having an apparent gamma-property. The apparent gamma-property is such that the luminous output of a fluorescent substance (7) of an anode (8) is directly proportional to a signal voltage.

Abstract: A method for fabricating an array (300) of edge electron emitters (530) includes the steps of: forming first and second grooves (310, 320) in first and second opposing planar surfaces (101, 102), respectively, of a supporting substrate (110) to form an array of openings (330) therethrough; forming a dielectric layer (122) on the first planar surface (101) and an emission structure (120) on the dielectric layer (122); forming a plurality of cathodes (132) on the emission structure (120); forming gates (515) on a portion of the surfaces defining the first grooves (310); forming a masking film (710) on the cathodes (132)/emission structure (120); removing an outer, radial portion (726) of the masking film (710); etching the emission structure (120), the retracted masking film (710) forming a mask, thereby providing a predetermined configuration of the edge electron emitters (530) with respect to the gates (515) and cathodes (132).

Abstract: A charge dissipation field emission device (200, 300, 400) includes a supporting substrate (210, 310, 410), a cathode (215, 315, 415) formed thereon, a dielectric layer (240, 340, 440) formed on the cathode (215, 315, 415) and having emitter wells (260, 360, 460) and a charge dissipation well (252, 352, 452, 453) exposing a charge-collecting surface (248, 348, 448, 449), for bleeding off gaseous positive charge generated during the operation of the charge dissipation field emission device (200, 300, 400), an electron emitter (270, 370, 470) formed in each of the emitter wells (260, 360, 460), and an anode (280, 380, 480) spaced from the dielectric layer (240, 340, 440) for collecting electrons emitted by the electron emitters (270, 370, 470).

Abstract: A field emitter and its fabrication method is described in which a gate electrode is formed around and substantially encloses the emitter. The emitter is formed on a silicon substrate and is in the form of a pyramid structure. The surface of the pyramid includes an oxide layer on it. The whole device is baked until the photoresist is drawn, by surface tension, towards the base of the pyramid to expose the metal layer. Etching of the metal layer and the oxide layer produces the finished device which may suitably be employed as a switch in an electronic circuit.

Abstract: A field emission display with improved viewing characteristics is described. The field emission display is formed with a baseplate and an opposing face plate. Field emission microtips are formed in openings in a conductive and insulating layer on the baseplate. An anode is formed on either the faceplate, or on the conductive layer surrounding each opening. Phosphorescent material is formed over the anode. A blocking layer is formed between the phosphor and the faceplate, such that during operation of the display direct light emission from the phosphor is blocked, resulting in indirect phosphorescence and a more comfortable display image. An optional reflective layer may be added over the conductive layer to increase phosphorescence.

Abstract: In a comb-like or wedge-like electron emitting device, an emitter or both an emitter and an anode electrode are processed from a single-crystal silicon thin film of an SOI wafer. The single-crystal silicon thin film in portions other than the processed portion is removed so that the silicon oxide layer is dug down further slightly. A gate electrode for applying an electric field in order to draw electrons out of the emitter is provided in the dug-down portion. When the end and side faces of the emitter are formed as (111) faces by anisotropic etching in the condition that the single-crystal silicon thin film is oriented to a (100) face, the emitter has a sharp edge at about 55.degree. with respect to the substrate. In a conical electron emitting device, the gate electrode is constituted by a single-crystal silicon thin film of an SOI wafer so that a pyramid surrounded by the (111) faces is formed on the single-crystal silicon substrate.

Abstract: The present invention is a device for producing collimated electron beams. The device comprises a gated field emission array having at least one emission tip and a grid electrode having a grid opening disposed above the emission tip in a first direction. The device also comprises an integrated planar lens electrode for producing a focusing effect on electron beams emitted by the emission tip. The planar lens electrode has a lens edge disposed aside at a distance from the grid opening in a second direction perpendicular to the first direction. Preferably, the planar lens electrode is an integrated layer with the gated field emission array on a substrate. The grid electrode and the lens electrode can be on the same layer and separated by a gap of vacuum. The planar lens electrode can be above the grid electrode, separated by an insulative material. Similarly, the planar lens electrode can be below the grid electrode, and separated by an insulator material.

Abstract: A display device such as a color phosphor display panel has a panel assembly comprising a faceplate, a pair of spaced side plates, and a backplate 1c which are joined together to provide an evacuated interior space. The display device includes a color filter layer having red, green, and blue filters disposed on the inner surface of the faceplate, the filter layer containing fine particles of inorganic metal compounds. A plurality of phosphor layers of ZnO:Zn are disposed on the color filter layer. A grid is disposed in spaced relation between the phosphor layers and a cathode for controlling a flow of thermions emitted from the cathode toward the phosphor layers. The fine particles of inorganic metal compounds have a particle size ranging from 0.01 .mu.m to 0.02 .mu.m. Preferably, the red filter contains fine particles of Fe.sub.2 O.sub.3, the green filter contains fine particles of TiO.sub.2.ZnO.CoO.NiO, and the blue filter contains fine particles of CoO.Al.sub.2 O.sub.3.

Abstract: A lateral-emitter electron field emission device structure incorporates a thin film laminar composite emitter structure including two or more films composed of materials having different etch rates when etched by an etchant. In its simplest form, the laminar composite emitter consists of two ultra-thin layers, etched differentially so that a salient remaining portion of the more etch-resistant layer protrudes beyond the less etch-resistant layer to form a small-radius tip. In a preferred form of the laminar composite emitter, it is a multi-layer laminar emitter, of which the most etch-resistant layer is doped-diamond. The diamond layer is doped using one or more N-type dopants. In this preferred emitter structure, the edge of the thin film diamond layer is the dominant electron emitter with a very low (nearly zero) work function. Hence the new device can operate at applied voltages substantially lower than in prior art. The laminar structure may be a sandwich structure with three layers.

Abstract: A device for emitting electrons, comprising a substrate, an insulating film formed on a surface of the substrate and having a recess, an emitter electrode formed on the insulating film and having an edge portion located at the recess, the edge portion of the emitter electrode being formed in the form of an arch within a plane perpendicular to the surface of the substrate so as to be sharpened toward a distal end of the emitter electrode, the edge portion of the emitter electrode being sharpened also in a planar direction parallel to the surface of the substrate toward the distal end of the emitter electrode so as to have a linear portion at the distal end, and the edge portion of the emitter electrode being adapted to emit electrons from the linear portion when an electric field is applied to the edge portion of the emitter electrode, and a gate electrode formed on the insulating structure and having an edge portion located at the recess and opposing the edge portion of the emitter electrode via a gap, the ed

Abstract: A semiconductor structure comprising two gate stacks of equal height but different composition. The two gate stacks each comprise two layers, with the first layer of each gate stack comprising the same material and the second layer of each gate stack comprising a different material. Each gate stack has an upper surface a distance `X` above the upper planar surface of a substrate of the semiconductor structure. Thus, the two gate stacks of different composition are of identical height.

Abstract: An improved high-frequency field-emission microelectronic device (10) has a substrate (20) and an ultra-thin emitter electrode (30) extending parallel to the substrate and having an electron-emitting lateral edge (110) facing an anode (40) across an emitter-to-anode gap (120). A control electrode (70), having a lateral dimension only a minor fraction of the emitter-to-anode gap width, is disposed parallel to the emitter and spaced apart from the emitter by an insulator (60) of predetermined thickness. A vertical dimension of the control electrode is only a minor fraction of the height of the anode. The control electrode may substantially surround a portion of the anode, spaced from the anode in concentric relationship.

Abstract: The present invention provides an emitter structure of a field emission electron gun. The emitter structure comprises an emitter being electrically conductive and being pointed at the top, wherein the top of the emitter has the highest resistance of every other part, so that the top of the emitter has the highest heat energy of every other part when the emitter emits electrons.

Abstract: A conductor array (100), for addressing a plurality of field emitters (130), including a plurality of cathode conductors (106, 108, 110) having conductive cathode connectors (126), a plurality of gate conductors (104) having a plurality of conductive gate connectors (116, 118, 120), and a plurality of fusible links (134, 138), which are located at a plurality of overlapping regions (103) of the cathode conductors (106, 108, 110) and the gate conductors (104) and which can be electrically severed to isolate electrical shorts existing at the overlapping regions (103).

Abstract: An electron emitter plate (110) for an FED image display has an extraction (gate) electrode (22) spaced by an insulating spacer (125) from a cathode electrode including a conductive mesh (18). Arrays of microtips (14) are located in mesh spacings (16), within apertures (26) formed in extraction electrode (22) and subcavities (141) formed through apertures (26) in insulating spacer (125). Subcavities (141a) are open to row-adjacent and column-adjacent subcavities (141b, 141c) to form larger main cavities (144). Posts (143) of insulating spacer (125) separate diagonally-adjacent cavities (141d). Subcavities (141) are formed by over-etching a layer of insulating spacer material (25) through apertures (26) before or after forming microtips (14) through the same apertures (26). Over-etching reduces the dielectric constant factor of gate-to-cathode capacitance in the finished structure.

Abstract: A lateral field emission device and method of fabricating the device which maximizes gate control of the cathode emitter electric field strength is disclosed. Gate control increases when the position of the gate edge is optimized with respect to the position of the emitter tip. Maximum control is achieved if the gate extends a distance beyond the emitter in the direction of the anode. Preferably, the displacement of the gate edge from the emitter tip is one half the cathode tip-anode distance for optimum control. The high gain device of the present invention provides improved transconductance.

Abstract: A multiple micro-tips field emission device includes a substrate, an adhesion layer formed on the substrate, a cathode formed in stripes on the adhesion layer, an insulation layer formed on the substrate on which the cathode is formed and having a hole formed therein, micro-tips for field emission, being multiply formed on the cathode in the hole, and a gate electrode formed on the insulation layer in stripes across the cathode and having an aperture for field emission from the micro-tips. The adjustment of the tip size is optionally available during the process. Also, the output current can be controlled in a wide range from nA to mA because of the multiple micro-tips. By forming the tips with tungsten, the device has good strength, oxidation characteristics and work function and has good electrical, chemical and mechanical endurance.

Abstract: A method for forming resistors for regulating current in a field emission display comprises integrating a high resistance resistor into circuitry for the field emission display. The resistor is in electrical communication with emitter sites for the field emission display and with other circuit components such as ground. The high resistance resistor can be formed as a layer of a high resistivity material, such as intrinsic polycrystalline silicon, polycrystalline silicon doped with a conductivity-degrading dopant, lightly doped polysilicon, titanium oxynitride, tantalum oxynitride or a glass type material deposited on a baseplate of the field emission display. Contacts are formed in the high resistivity material to establish electrical communication between the resistor and the emitter sites and between the resistor and the other circuit components. The contacts can be formed as low resistance contacts (e.g., ohmic contacts) or as high resistance contacts (e.g., Schottky contacts).

Abstract: A novel electrode unit includes a plurality of linear cathodes and a plurality of flat-shaped electrodes. Each of the electrodes has a plurality of identification holes. The relative positional relationship of the identification holes is uniform with regard to each of the electrodes. However, the positions of the identification holes are shifted from those of adjacent electrodes by a predetermined interval so that a line connecting centers of the ID holes is parallel or perpendicular to a longitudinal direction of the linear cathodes when the electrodes are piled up and evenly aligned. The identification holes allow the electrodes to be accurately positioned with respect to each other when assembling the electrodes into the electrode unit. Each of the electrodes also includes a temporary fixing part at an area indented from an outer circumference of the electrode. During assembly of an electrode unit, the temporary fixing part is fixed to a temporary fixing part of an adjacent electrode via a spacer.

Abstract: An integrated circuit electronic grid device includes first and second metal layers wherein the metal layers are vertically disposed within a substitute. A layer of a dielectric medium is disposed between the metal layers and a third metal layer is spaced apart from the second metal layer and insulated from the second metal layer by another layer of a dielectric medium. The first and second metal layers are biased with respect to each other to cause a flow electrons from the first metal layer toward the second metal layer. The second metal layer is provided with a large plurality of holes adapted for permitting the flow of electrons to substantially pass therethrough and to travel toward the third metal layer. A fourth metal layer is spaced apart from the third metal layer to collect the electrons wherein the third metal layer is also provided with a large plurality of holes to permit the electrons to flow therethrough and continue toward the fourth metal layer.

Abstract: An electron-emitting device comprises a substrate, an electrode provided on said substrate, an insulating layer laminated on the electrode, and a second electrode having an opening and laminated on the insulating layer in such a manner that the insulating layer is uncovered at the opening and electrons are emitted from the opening of the second electrode as a result of application of an voltage between the electrodes. An image display apparatus comprises the electron-emitting device, a modulating electrode capable of modulating an electron beam emitted from the electron-emitting device, in accordance with an information signal, and an image forming member capable of forming an image as a result of irradiation with the electron beam, these of which are successively disposed. An image forming apparatus comprises the electron-emitting device, and a means for modulating an electron beam emitted from said electron-emitting device, in accordance with an information signal.

Abstract: A flat panel display of a field emission type having a triode (three terminal) structure and useful as a device for displaying visual information is disclosed. The display includes a plurality of corresponding light-emitting anodes and field-emission cathodes, each of the anodes emitting light in response to emission from each of the corresponding cathodes, each of the cathodes including a layer of low work function material having a relatively flat emission surface which includes a plurality of distributed localized electron emission sites and a grid assembly positioned between the corresponding anodes and cathodes to thereby control emission levels to the anodes from the corresponding cathodes. In the preferred embodiment of the invention, the layer of low work function material is amorphic diamond film.

Abstract: A gas discharge closing switch has a high voltage anode structure containing a plurality of surface elements facing substantially toward a cathode and spaced from each other to define gaps therebetween. In a preferred embodiment, a control electrode structure includes a surface defining an aperture corresponding to at least one of the gaps.

Abstract: A field emission display includes an insulating layer and an emitting layer disposed on the faceplate. A vacuum chamber is disposed between a backplane and the emitting layer and contains a getter. Apertures are defined through the insulating layer and the emitting layer for communicating contaminates from the faceplate to the vacuum chamber.

Abstract: An electron source is formed to have a redundant conductor extraction grid (17) and redundant column conductor (38, 39). Grid (17) has a plurality of conductor strips (21, 22) that overlay the column conductors (38, 39). When one conductor strip (21, 22) of the grid (17) is shorted to an underlying conductor, the non-shorted conductor remains usable. Similarly, the column conductors (38, 39) each have a plurality of column conductor strips (14, 25, 41, 42) that underlie the grid (17). When one column conductor strip (14, 25, 41, 42) is shorted to the grid (17), the non-shorted column conductor strip remains usable.

Abstract: In accordance with the invention, a field emission device is made by disposing emitter material on an insulating substrate, applying a sacrificial film to the emitter material and forming over the sacrificial layer a conductive gate layer having a random distribution of apertures therein. In the preferred process, the gate is formed by applying masking particles to the sacrificial film, applying a conductive film over the masking particles and the sacrificial film and then removing the masking particles to reveal a random distribution of apertures. The sacrificial film is then removed. The apertures then extend to the emitter material. In a preferred embodiment, the sacrificial film contains dielectric spacer particles which remain after the film is removed to separate the emitter from the gate. The result is a novel and economical field emission device having numerous randomly distributed emission apertures which can be used to make low cost flat panel displays.

Abstract: A ballistic charge transport device including an edge electron emitter defining an elongated central opening therethrough with a receiving terminal (e.g. an anode) at one end of the opening and a getter at the other end. A suitable potential is applied between the emitter and the receiving terminal to attract emitted electrons to the receiving terminal and a different suitable potential is applied between the emitter and the getter so that contaminants, such as ions and other undesirable particles, are accelerated toward and absorbed by the getter.

Abstract: A field emission cold cathode includes a conductive substrate, an insulating layer formed on the substrate and having plural cavities each for receiving an emitter, a gate electrode for applying a high electric field to the tips of emitters. An annular portion of the gate electrode defines an opening of a corresponding cavity is located at a distance from the substrate smaller than the distance between an elevated middle portion of the gate electrode and the substrate. Parasitic capacitance between the gate electrode and the cold cathode including the substrate and the emitter is reduced due to the large distance between the elevated middle portion of the gate electrode and the substrate. Between the elevated middle portion and the substrate, a second insulating layer or a gap is disposed. The field emission cold cathode can function in a high frequency range while fabricating conical emitters with a small height due to the small distance between the annular portions and the substrate.

Abstract: The excitation device comprises a plurality of rod-like electrode elements. Each electrode element is enclosed by a chemically and thermally stable protective casing, which can be exposed to high electric fields. The electrode elements are held in vertically extending crosspieces. This results in a setup of several modules, each of which consists of a plurality of electrode elements and two cross pieces. The electrode elements of each module are electrically connected to a conductive bar and have equal potential. Consecutive modules are alternately connected to ground or phase, respectively.