Abstract: An electron beam apparatus includes an electron source having an electron-emitting device, an electrode for controlling an electron beam emitted from the electron source, a target to be irradiated with an electron beam emitted from the electron source and a spacer arranged between the electron source and the electrode. The spacer has a semiconductor film on the surface thereof that is electrically connected to the electron source and the electrode.

Abstract: Binders, both inorganic and organic, are used for providing sufficient binding action to hold powder phosphor particles together as well as to the glass screen of a field emission display device.

Abstract: A cathodoluminescent anode is formed on an insulating substrate, while on another insulating substrate are formed cathode conductors, an insulating layer, a grid layer used for the formation of grids, holes in the insulating layer and the grid layer and microtips in the holes. Moreover, a thin insulating layer is formed on the grid layer in order to limit the current liable to flow between the anode and the grids. Another thin layer or film is formed on the thin insulating layer that is sufficiently conductive or resistive to prevent disturbance by the thin electrically insulating layer, of the electric field created between the microtips and the grids.

Abstract: In accordance with the invention, a field emission device is made by disposing emitter material on an insulating substrate, applying masking particles to the emitter material, applying an insulating film and a gate conductor film over the masking particles and emitter material and removing the particles to reveal a random distribution of apertures to the emitter material. The result is a novel and economical field emission device having numerous randomly distributed emission apertures which can be used to make low cost flat panel displays.

Abstract: A plurality of edge emitters in a FED array include a plate shaped substrate having parallel, laterally spaced apart grooves formed in a first surface and parallel, laterally spaced apart grooves formed in the opposite surface so that each second groove crosses each first groove at an angle. The combined depths of the grooves is greater than the thickness of the plate substrate so that an opening is formed through the substrate at each point where a second groove crosses a first groove. Gate metal is deposited on the surfaces in the openings and emitter material is deposited on the lands of the first surface to form FED emitters in each opening.

Abstract: An improved high-frequency field-emission microelectronic device (10) has a substrate (20) and an ultra-thin emitter electrode (30) extending parallel to the substrate and having an electron-emitting lateral edge (110) facing an anode (40) across an emitter-to-anode gap (120). A control electrode (70), having a lateral dimension only a minor fraction of the emitter-to-anode gap width, is disposed parallel to the emitter and spaced apart from the emitter by an insulator (60) of predetermined thickness. A vertical dimension of the control electrode is only a minor fraction of the height of the anode. The control electrode may substantially surround a portion of the anode, spaced from the anode in concentric relationship.

Abstract: A lateral-emitter field emission device has a thin-film emitter cathode 50 which has thickness of not more than several hundred angstroms and has an edge or tip 110 having a small radius of curvature. To form a novel display cell structure, a cathodoluminescent phosphor anode 60 is positioned below the plane of the thin-film lateral-emitter cathode 50, allowing a large portion of the phosphor anode's top surface to emit light in the desired direction. An anode contact layer contacts the phosphor anode 60 from below to form a buried anode contact 90 which does not interfere with light emission. The anode phosphor is precisely spaced apart from the cathode edge or tip and receives electrons emitted by field emission from the edge or tip of the lateral-emitter cathode, when a small bias voltage is applied. The device may be configured as a diode, triode, or tetrode, etc.

Abstract: A conductor array (100), for addressing a plurality of field emitters (130), including a plurality of cathode conductors (106, 108, 110) having conductive cathode connectors (126), a plurality of gate conductors (104) having a plurality of conductive gate connectors (116, 118, 120), and a plurality of fusible links (134, 138), which are located at a plurality of overlapping regions (103) of the cathode conductors (106, 108, 110) and the gate conductors (104) and which can be electrically severed to isolate electrical shorts existing at the overlapping regions (103).

Abstract: A display (10) includes an electron source having a row conductor (17) that utilizes a plurality of longitudinal elements (26, 28). Each longitudinal element (26, 28) has extraction section (19, 23) that extends from the longitudinal element toward an adjacent longitudinal element. The longitudinal elements (26, 28) are electrically connected by a plurality of transverse connectors (29, 38, 39). When a short occurs between the row (17) and an underlying column (12, 36), the shorted portion can be electrically isolated so that the remainder of the row remains functional.

Abstract: A micrometer scale emitter tip or array is disclosed having precisely located tips and surrounding gates. A silicide on the tips reduces tip work function.

Abstract: A multiple micro-tips field emission device includes a substrate, an adhesion layer formed on the substrate, a cathode formed in stripes on the adhesion layer, an insulation layer formed on the substrate on which the cathode is formed and having a hole formed therein, micro-tips for field emission, being multiply formed on the cathode in the hole, and a gate electrode formed on the insulation layer in stripes across the cathode and having an aperture for field emission from the micro-tips. The adjustment of the tip size is optionally available during the process. Also, the output current can be controlled in a wide range from nA to mA because of the multiple micro-tips. By forming the tips with tungsten, the device has good strength, oxidation characteristics and work function and has good electrical, chemical and mechanical endurance.

Abstract: The subject is a field emission cold cathode element having a conducting substrate, a dielectric layer which is on the substrate and has holes, emitter electrodes which have a sharp-pointed tip and stand on the substrate in the respective holes in the dielectric layer and a gate electrode layer which is on the dielectric layer and has apertures right above the respective holes in the dielectric layer. The tip of each emitter electrode is near or in the aperture in the gate electrode layer, and the emission current depends on the position of the emitter tip relative to the gate electrode. According to the invention, the gate electrode layer is made relatively thick in limited regions surrounding the respective apertures and relatively thin in other regions to compensate for inevitable variations in the emitter electrode heights without augmenting interlayer stresses attributed to different thermal expansions of the gate electrode and dielectric layers.

Abstract: A flat panel display of a field emission type having a triode (three terminal) structure and useful as a device for displaying visual information is disclosed. The display includes a plurality of corresponding light-emitting anodes and field-emission cathodes, each of the anodes emitting light in response to emission from each of the corresponding cathodes, each of the cathodes including a layer of low work function material having a relatively flat emission surface which includes a plurality of distributed localized electron emission sites and a grid assembly positioned between the corresponding anodes and cathodes to thereby control emission levels to the anodes from the corresponding cathodes. In the preferred embodiment of the invention, the layer of low work function material is amorphic diamond film.

Abstract: A microtip structure with high uniformity, low operating voltage and no resistive dissipation for a field emission display is described. A substrate is provided. A first conductive layer is formed on the substrate that acts as a cathode. A second conductive layer with a narrow circular opening acts as a gate. A first dielectric layer separates the cathode and the gate. The microtip extends up from the cathode and into the opening. A second dielectric layer is over the gate, with a circular opening that is larger than and concentric with the narrow circular opening in the gate. A means to provide a brief, charging voltage to the gate, followed by a longer operational voltage, wherein the amplitude of the operational voltage is lower than the amplitude of the charging voltage, is included.

Abstract: An inductive output tetrode includes a cylindrical ceramic envelope within which is located an electron gun including a cathode and grid. An annular resonant input cavity into which a high frequency signal is coupled surrounds the envelope and is located adjacent the electron gun so as to provide a modulating electric field in the cathode-grid region to density modulate the electron beam. The input cavity is connected to two metal cylinders arranged immediately adjacent to the outside of the envelope. Metallic portions located within the envelope are co-extensive with cylinders with the material of the envelope 1 being located between them. These structures act as r.f. chokes to reduce high frequency losses from the input cavity. Tuning of the resonant cavity may be achieved by adjusting a tuning member which is at distance of quarter of a wavelength at the resonant frequency from the cathode-grid region.

Abstract: Bidirectional field emission devices (FEDs) and associated fabrication methods are described. A basic device includes a first unitary field emission structure and an adjacently positioned, second unitary field emission structure. The first unitary structure has a first cathode portion and a first anode portion, while the second unitary structure has a second cathode portion and a second anode portion. The structures are positioned such that the first cathode portion opposes the second anode portion so that electrons may flow by field emission thereto and the second cathode portion opposes the first anode portion, again so that electrons may flow by field emission thereto. A control mechanism defines whether the device is active, while biasing voltages applied to the first and second unitary structures define the direction of current flow. Multiple applications exist for such a bidirectional FED. For example, an FED DRAM cell is discussed, as are methods for fabricating the various devices.

Abstract: An electron emission device including an array of microelectronic field emission devices, each with an integrally formed capacitance, a plurality of switches, a weighting level detector, and data storage and weighting structure. In one operational method, the field emission device electron current emission is characterized and a weighting factor is calculated and coupled into the data storage and weighting means so as to provide electron emission device electron emission current in accordance with a desired emission level as prescribed by a data input signal and notwithstanding variations in electron current emission which may be present due to device fabrication.

Abstract: A first laminated sub-structure having a semiconductor substrate, a lower insulating layer on the semiconductor substrate, emitter electrodes formed in micro-apertures in the lower insulating layer and a gate electrode on the upper surface of the lower insulating layer is aligned with a second laminated sub-structure having a transparent upper insulating layer and a grid member on the transparent upper insulating layer by means of a stepper, and the first and second laminated sub-structures are fixed to each other through a field assisted glass-metal sealing technique.

Abstract: The invention is a field-emission element that is fabricated by forming an elevated surface and a base surface on a conductive substrate or a semiconductor substrate by applying a photolithographic process and an etching process, and making these surfaces cross at a step with an acute angle between the two surfaces. The intersection of the elevated surface with the step form a cathode having a radius of curvature of less than 20 nm. A gate electrode formed on the base electrode but insulated therefrom is disposed at a distance less than 1 .mu.m from said cathode by controlling the distance by the thickness of an etching protection mask. The field-emission element enables electrons to be emitted from the cathode when a voltage less than 150V is applied between the cathode and the gate electrode.

Abstract: The disclosed multi-pixel flat panel displays (e.g., flat panel field emission displays (FPFED) or liquid crystal displays (LCD)) includes spaced apart first and second electrodes, with a patterned solid material layer in contact with one of the electrodes, exemplarily between the two electrodes. The patterned layer (referred to as the "web") includes a multiplicity of apertures, with at least one (preferably three or more) aperture associated with a given pixel. In the aperture is disposed a quantity of a second material, exemplarily, a phosphor in the case of an FPFED, or a color filter material in the case of a LCD. The web can facilitate second material deposition by means of, e.g., screen printing, typically making possible formation of smaller phosphor or filter dots than was possible by prior art device. The web also can facilitate provision of spacer structure between the two electrodes, and can include getter or hygroscopic material.

Abstract: A field emission cold cathode includes a conductive substrate, an insulating layer formed on the substrate and having plural cavities each for receiving an emitter, a gate electrode for applying a high electric field to the tips of emitters. An annular portion of the gate electrode defines an opening of a corresponding cavity is located at a distance from the substrate smaller than the distance between an elevated middle portion of the gate electrode and the substrate. Parasitic capacitance between the gate electrode and the cold cathode including the substrate and the emitter is reduced due to the large distance between the elevated middle portion of the gate electrode and the substrate. Between the elevated middle portion and the substrate, a second insulating layer or a gap is disposed. The field emission cold cathode can function in a high frequency range while fabricating conical emitters with a small height due to the small distance between the annular portions and the substrate.

Abstract: A field emitter cold cathode has a substrate possessing a first main surface on one side of itself and a second main surface on the other side of itself and has windows formed in itself. An emitter layer is formed on the first main surface side of the substrate, and has emitters disposed at the positions of the windows. A gate electrode layer is formed on the second main surface side of the substrate. In addition, openings are so formed as to enclose untouched the periphery of at least the leading end part of the emitters.

Abstract: A vacuum chamber is provided with an electron emission source on a first side wall, a collector on a second side wall opposite to the first side, and an insulated electrode on a bottom wall. Electrons emitted from the electron emission source move over the insulated electrode to be collected by the collector, so that the spatial position and the path of the electrons on the insulated electrode are controlled dependent on an electric potential generated by the insulated electrode.

Abstract: A field emission element including a gate and an emitter and capable of preventing any of the element oxide layer from being formed on a tip of the emitter to prevent a decrease in emission current, unstable operation and an increase in noise. The gate has a surface formed of a material of oxygen bonding strength higher than that of a material for at least a tip surface of the emitter, so that oxygen atoms and molecules containing oxygen entering the gate may be captured by adsorption on the gate to prevent formation of any oxide layer on the emitter. When a portion of the emitter other than the tip surface is formed of a material of oxygen bonding strength higher than that of the material for the tip surface, formation of any oxide layer on the tip surface of the emitter is minimized.

Abstract: A vacuum microelectronic field-emission device includes: a substrate; an emitter portion formed to have at least an wedge portion extending in parallel to the substrate, the emitter portion being supported by the substrate; a gate portion formed a first given distance apart from the tip of the emitter portion, the gate portion being supported by the substrate, the gate portion being electrically insulated from the emitter portion; and a collector portion formed a second given distance apart from a tip of the emitter portion, the collector portion being supported by the substrate, the second given distance is equal to or larger than the first given distance, the collector portion being electrically insulated from the emitter portion and the gate portion.

Abstract: A flat panel display device comprises an anode electrode, a fluorescent layer formed on the anode electrode, a cathode electrode having a plurality of cold cathodes, a gate electrode spaced from and electrically insulated from the cathode electrode for triggering emission of electrons by the cold cathodes, and a light-reflecting layer formed on or above the gate electrode face to face with the fluorescent layer.

Abstract: An electron source including selectively impurity doped semiconductor diamond wherein regions of selectively impurity doped regions are inverted with respect to the charge carrier population to provide a conductive path traversed by electrons subsequently emitted into a free-space region from the electron emitter. An inversion mode electron emission device including a selectively impurity doped semiconductor diamond electron emitter, for emitting electrons; a control electrode; and an anode for collecting emitted electrons wherein operation of the device relies on the inducement of an inversion region to facilitate electron transit to an electron emitting surface of the electron emitter.

Abstract: The present invention relates generally to a new integrated Vacuum Microelectronic Device (VMD) and a method for making the same. Vacuum Microelectronic Devices require several unique three dimensional structures: a sharp field emission tip, accurate alignment of the tip inside a control grid structure in a vacuum environment, and an anode to collect electrons emitted by the tip. Also disclosed is a new structure and a process for forming diodes, triodes, tetrodes, pentodes and other similar structures. The final structure made can also be connected to other similar VMD devices or to other electronic devices.

Abstract: A method of producing an FED including a central conductive region having a surface perpendicular to the supporting structure forming a device anode, a structure including first and second layers of intrinsic semiconductor material with a conductive layer, forming an emitter, sandwiched therebetween and stacked to each provide a surface parallel to and spaced from the conductive region surface, and conductive layers disposed on the provided surfaces of the first and second layers, perpendicular to the sandwiched conductive layer, in spaced relation to each other and the sandwiched conductive layer to form gate extraction electrodes.

Abstract: A non-power generating current limiting device such as a field effect transistor is provided to output a regulated current in dependence upon a control voltage. An electron field emitter is connected to a drain or output of the non-power generating current limiting device to receive the regulated current. A tip of the electron field emitter emits electrons towards a collector anode. An extractor gate can be provided between the electron field emitter and the collector anode to control the rate of electron emission from the electron field emitter. Because the non-power generating current limiting device regulates the current to the electron field emitter, a maximum current output of the electron field emitter is limited to the regulated current from the voltage controlled current source. The electron field emitter is thus protected from destruction due to excess current. The non-power generating current limiting device can also be used to modulate electron emission from the field emitter.

Abstract: A method for producing a vacuum microelectronics device ( 10 ) on a substrate ( 12 ) and insulating dielectric (14) first forms an electrode base (16) on the insulating dielectric (14). Next, electrode base (16) is covered with a first organic spacer (42) having an aperture (44) for exposing a portion of electrode base (16). Next, a metal layer (46) is applied over organic spacer (42) to form emitter (18) within aperture (44). After removal of organic spacer (42) and metal layer (46), a second organic spacer (44) and a grid material (20) are applied over emitter (18) and electrode base (16). Next, a third organic spacer (50) and an anode metal (22) with access apertures ( 34 ) and ( 36 ) are placed over the structure. After removing organic spacers (48) and (50), anode metal (22) is sealed with metal (26) to close off access apertures ( 34 ) and ( 36 ). The result is a vacuum microelectronics device (10) usable is a triode or diode.

Abstract: A variety of field emission devices and structures which employ non-substrate layers of single-crystal silicon. By employing non-substrate layers of single-crystal silicon, improved emission control is achieved and improved performance controlling devices are formed within the device structure.

Abstract: A vacuum microelectronic transistor which can operate at a high speed and has a high mutual conductance. The vacuum microelectronic transistor comprises an emitter for emitting electrons therefrom, a collector for receiving electrons from the emitter, and a pair of gate electrodes for controlling arrival of electrons from the emitter to the collector. The emitter and collector are disposed in an encapsulated condition on a substrate such that electrons emitted from the emitter run straightforwardly in vacuum to the collector while the gate electrodes are located adjacent and across a route of such electrons from the emitter to the collector. Also, a process of manufacturing such vacuum microelectronic transistor is disclosed.

Abstract: An electron device including a diamond material electron emitter and an anode, both disposed on a supporting substrate, so as to define an interelectrode region therebetween. Electron transport across the interelectrode region is initiated at an emitting surface of the diamond material electron emitter. An alternative embodiment employs a gate electrode disposed substantially symmetrically and axially displaced about the electron emitter and substantially in the interelectrode region to provide a modulation capability.

Abstract: An electron source includes: linear thermionic cathodes for emitting electron beams; an electron beam lead-out electrode which is disposed substantially in a parallel relationship with the linear thermionic cathodes and is formed with apertures for passing the electron beams therethrough; and a plurality of support members for supporting the linear thermionic cathodes each of which has a contact portion held in contact with at least a portion of the linear thermionic cathodes; wherein each of the apertures of the elctron beam lead-out electrodes is disposed so as to confront the contact portion of the support member.

Abstract: Cathodoluminescent display apparatus employing an electron source including a plurality of diamond crystallites. Image display apparatus employing an array of picture elements, each picture element having associated therewith an electron source including electron emitting diamond crystallites, is realized as a preferred embodiment.

Abstract: A triode having a coaxially positioned cathode and grid or gate electrode positioned within an evacuated tubular anode. The cathode has a plurality of emitting points radially disposed on its outer surface. The emitting points are surrounded by a plurality of grid or gate electrodes controlling the conducted beam current between the inner cathode and the surrounding anode. The gain and power of the triode is only limited by the number of emitter points and the number of grid or gate electrodes positioned within the anode. Since the anode envelopes the cathode and grid electrode, the anode can be used as a waveguide or antenna launch without the need of RF coupling connectors.

Abstract: An image display device capable of minutely setting the interval between an emitter (6) and a gate (5) with high accuracy and of being driven at a significantly reduced drive voltage with good emission uniformity. Each emitter (6) is provided in a recess in a substrate (2), so that the interval between the emitter (6) and a gate (5) is determined depending upon the thickness of the emitter (6). Thus, the interval can be readily controlled by adjusting or varying the period of time during which the film for the emitter (6) is formed, resulting in a micro-interval of the order of sub-microns between the two components being possible with high accuracy.

Abstract: A quantum interference semiconductor device using the interference effect of electron waves has a cathode, an anode, and a gate which are mounted in a vacuum. An electron wave which is emitted from the cathode into the vacuum is divided into a plurality of electron waves and, subsequently, the plurality of electron waves are combined at the anode. Phase differences among the plurality of electron waves are controlled by the gate, thereby making the device operative.

Abstract: A microminiature vacuum tube and a process for fabrication thereof. The tube is formed on a compound semiconductor substrate using solid state semiconductor fabrication techniques. A straight line path for electron flow is provided by forming an emitter and collector in the same plane. The emitter and collector are formed in a low resistance layer of a compound semiconductor substrate, such as by etching a recess through the low resistance layer and into the substrate to define a separate emitter and collector. Preferential etching techniques are utilized to form a sharp-edge in at least the emitter portion of the recess. A gate is formed in the recess proximate to but out of the plane for electron flow. The use of microminiature solid state fabrication technique allows the recess to be formed at submicron size to reduce the voltage requirements on the microminiature vacuum tube.

Abstract: An arrangement for and method of automatically collimating an expanding electron beam emitted from a field emission cathode is disclosed herein. This is accomplished without an externally powered colimating or focusing electrode. Rather, a dielectric member is positioned around the path taken by the beam so that when the beam is initially turned on, it bombards the dielectric member with free electrons and thereby places a negative electrostatic charge, ultimately reaching the potential of the cathode electrode itself, on the dielectric member. This electrostatic charge, in turn, causes the cross-sectional configuration of the beam to contract.

Abstract: An improved solid state spark gap for use, for example, in firing munitions. The spark gap is formed by depositing a trigger electrode on a dielectric substrate, precisely covering the trigger electrode and an adjoining area with a dielectric layer, and forming an anode and a cathode on the dielectric layer with a spark gap there between. The anode and cathode do not overlap the trigger electrode. The spark gap may be enclosed within a hermetically sealed inert gas filled cover.

Abstract: A FED with integrally formed deflection electrode coupled to the electron emitter such that any variation of electron emitter operating voltage is coincidentally impressed on the deflection electrode so as to effectively minimize variations in the emitted electron beam cross-section. In image display devices including FEDs with voltage variations induced at the electron emitter to provide image information, integrally formed deflection electrodes are connected to follow the electron emitter variations so that pixel cross-sections remain substantially invariant under device operation.

Abstract: Disclosed are high electrical charge density entities, generated in electrical discharge production. Apparatus for isolating the high charge density entities, selecting them and manipulating them by various guide techniques are disclosed. Utilizing such apparatus, the paths followed by the entities may be switched, or selectively varied in length, for example, whereby the entities may be extensively manipulated. Additional devices are disclosed for the manipulation and exploitation of these entities, including their use with a camera and also in an oscilloscope.

Abstract: Disclosed are self-contained high electrical charge density entities, generated in electrical discharge production. Apparatus for isolating the high charge density entities, selecting them and manipulating them by various guide techniques are disclosed. Utilizing such apparatus, the paths followed by the entities may be switched, or selectively varied in length, for example, whereby the entities may be extensively manipulated. Additional devices are disclosed for the manipulation and exploitation of these entities, including their use with a camera and also in an oscilloscope, as well as their use in generating RF radiation. A flat panel display is disclosed which is operated by these charge entities, up to the point of their generating electrons to strike a phosphor screen.

Abstract: A device providing electric-field induced electron emission includes an annular edge for emission of charged particles. Particle emission is induced, at least in part, by the presence of a conducting or semi-conducting post within the periphery of the emitting edge.

Abstract: A microelectronic device and a method of forming the same are disclosed. The microelectronic device includes a cathode, an anode and a first grid disposed adjacent a major surface of a substrate. The first grid is positioned between the cathode and the anode. The first grid is formed from conductive material using a sidewall spacer technique. The anode is made of conductive polysilicon, the cathode is made of tungsten and has a portion elevated from the substrate to aid in the ballistic transport of electrons. A second grid is formed using a sidewall spacer technique, and is positioned between the first grid and the anode. The method of making a microelectronic device includes forming an anode and a cathode on a surface of a substrate, then depositing, in series, first and second sacrificial layers. A first wall is formed by removing portion of the second sacrificial layer. The first wal is positioned between the anode and the cathode.

Abstract: A microelectronic field emitter includes a horizontal emitter electrode and a vertical extraction electrode on the horizontal face of a substrate. An end of the horizontal emitter electrode and the end of the vertical extraction electrode form an electron emission gap therebetween. The emitter electrode may be formed on an insulating layer which is formed on a substrate. The insulating layer also includes a sidewall, and the extraction electrode may be formed on the sidewall with one thereof extending adjacent the emitter electrode to form an electron emission gap therebetween. A vertical collector electrode may also be formed on the sidewall of a second insulating layer spaced from the first sidewall. The field emitter may be cylindrical, planar, or of various other shapes. multiple emitters, extractors and collectors may be stacked on one another.

Abstract: An integrally controlled field emission device display employing planar field emission devices as controlling elements for non-planar field emission devices utilized for excitation of a cathodoluminescent layer is provided.

Abstract: A field emission device having a diamond semiconductor electron emitter with an exposed surface exhibiting a low/negative electron affinity which is operably controlled by modulation of a junction depletion region. Application of a suitable operating voltage to a device gate electrode modulates the depletion width to control availability of electrons transiting the bulk of the electron emitter for emission at the exposed surface.