Multipointed Or Serrated Edge Electrode Patents (Class 313/351)
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Patent number: 7264978Abstract: A field emission type cold cathode, comprising a substrate having a conductivity at least on the surface thereof, an insulation layer formed on the substate and having a first opening part, a gate electrode layer formed on the insulation layer, having a center generally aligned with the center of the first opening part, and having, therein, a second opening part having an opening diameter larger than the opening diameter of the first opening part, and an emitter layer formed in the first opening part, the emitter layer characterized by further comprising the bottom surface and the side surfaces of the first opening part.Type: GrantFiled: June 18, 2002Date of Patent: September 4, 2007Assignee: NEC CorporationInventor: Fuminori Ito
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Patent number: 7259510Abstract: A microelectromechanical microwave vacuum tube device is disclosed. The device consists of a cathode formed on a substrate, the cathode comprising electron emitters. A cathode emission control grid is also attached to the device substrate. The device further includes an output structure where amplified microwave power is removed from the device. In the device, the cathode surface and the grid surface are substantially parallel to each other and substantially perpendicular to the substrate. One of either the cathode, the grid, or both the cathode and the grid, are attached to the device substrate by one or more flexural members. The device further comprises an anode that is substantially parallel to the cathode surface and the grid surface.Type: GrantFiled: August 30, 2000Date of Patent: August 21, 2007Assignee: Agere Systems Inc.Inventors: Peter Ledel Gammel, Richard Edwin Howard, Omar Daniel Lopez, Wei Zhu
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Patent number: 7256535Abstract: Diamond microtip field emitters are used in triode vacuum microelectronic devices, sensors and displays. Diamond triode devices having integral anode and grid structures can be fabricated. Ultra-sharp tips are formed on the emitters in a fabrication process in which diamond is deposited into mold cavities in a two-step deposition sequence. During deposition of the diamond, the carbon graphite content is carefully controlled to enhance emission performance. The tips or the emitters are treated by post-fabrication processes to further enhance performance.Type: GrantFiled: April 28, 2004Date of Patent: August 14, 2007Assignee: Vanderbilt UniversityInventors: Jimmy L. Davidson, Wang Poo Kang, David V. Kerns, Mickey Evans Howell
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Patent number: 7247980Abstract: Disclosed is an emitter composition of a field emission cell that is printed on a cathode substrate of a display to be applied to an electron emission source, including a carbon nanotube, a binder, glass frit, a dispersing agent and an organic solvent, characterized by further having 0.1–20 w % of diamond. Further, a manufacturing method of the emitter composition and a field emission cell using the emitter composition are also provided. In the current invention, since the field emission cell has the carbon nanotube and the diamond distributed simultaneously therein, it has a relatively high current density even at the same driving voltage, thereby improving emitting properties. In addition, the field emission cell is advantageous in terms of superior printability and stable field emission, while reducing various expenses required to operate and repair constitutive parts thereof.Type: GrantFiled: March 30, 2004Date of Patent: July 24, 2007Assignee: Iljin Idamond Co., LtdInventors: Yang Woon Na, Gwang Bae Kim
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Publication number: 20070145878Abstract: A field emission illumination device includes a sealed tubular body, an anode layer, a fluorescence layer and an electron emitting cathode electrode. The sealed tubular body has a light-permeable portion and the anode is formed on an inner surface of the light-permeable portion of the tubular body. The fluorescence layer is formed on the anode layer. The electron emitting cathode is positioned in the tubular body and includes at least one carbon nanotube yarn. In the illuminating process the energy in the field emission illumination device only undergoes transformation from electric energy to luminous energy, so the efficiency of the energy transformation is increased.Type: ApplicationFiled: August 25, 2006Publication date: June 28, 2007Applicants: Tsinghua University, HON HAI Precision Industry CO., LTD.Inventors: Peng Liu, Yang Wei, Kai-Li Jiang, Xiao-Bo Zhang, Shou-Shan Fan
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Patent number: 7233102Abstract: The field emission device includes a substrate, a cathode, a gate insulating layer, an electron emitter, and a gate electrode. The cathode is formed on the substrate. The gate insulating layer is formed on the cathode and has a well exposing a portion of the cathode. The electron emitter is formed on the exposed portion of the cathode. The gate electrode is formed on the gate insulating layer and has a gate hole corresponding to the well. The gate electrode further includes a cylindrical electrode part that forms a focusing electric field from the gate hole toward a proceeding path of an electron beam. Accordingly, a focusing electric field can be formed around an electron beam emitted from the electron emitter so as to converge and focus the electron beam passing through the focusing electric field. As a result, color purity, brightness, and durability can be improved.Type: GrantFiled: October 17, 2003Date of Patent: June 19, 2007Assignee: Samsung SDI Co., Ltd.Inventors: Shang-hyeun Park, Hang-woo Lee, You-jong Kim, Pil-soo Ahn
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Patent number: 7233101Abstract: In accordance with the inventions, a new configuration of spaced-apart nanostructures is provided as well as a variety of improved articles using the new configuration. Improved articles include microwave amplifiers, field emission displays, plasma displays, electron sources for lithography and compact x-ray sources.Type: GrantFiled: February 3, 2003Date of Patent: June 19, 2007Assignee: Samsung Electronics Co., Ltd.Inventor: Sungho Jin
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Patent number: 7230373Abstract: A field emission type backlight device can include upper and lower substrates facing each other with a gap between them, an anode electrode on a lower side of the upper substrate, a fluorescent layer on a lower side of the anode electrode, a lower gate electrode on an upper side of the lower substrate, an insulating layer on an upper side of the lower gate electrode, a cathode electrode on an upper side of the insulating layer, and a gate electrode that is provided on an upper side of the insulating layer and electrically connected to the lower gate electrode.Type: GrantFiled: February 3, 2005Date of Patent: June 12, 2007Assignee: Samsung SDI Co., Ltd.Inventors: Tae-sik Oh, Jong-min Kim, Jae-eun Jung, Jung-woo Kim, Hang-woo Lee
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Patent number: 7221087Abstract: A field emission display includes: a cathode electrode (17); an anode electrode (20); a gate electrode (19) arranged between the cathode electrode and the anode electrode; a carbon nanotube array (15) electrically connected to the cathode electrode at a first end; and a spacer (14) insulatively separating the gate electrode from the cathode electrode. A second opposite end of the carbon nanotube array is flush with a top end of the spacer. An intermediate layer (11) having a precisely controllable thickness is arranged between the gate electrode and the spacer. The distance between the gate electrode and the carbon nanotube array is mainly controlled by the thickness of the intermediate layer.Type: GrantFiled: March 26, 2004Date of Patent: May 22, 2007Assignees: Tsinghua University, Hon Hai Precision Ind. Co., Ltd.Inventors: Liang Liu, Shoushan Fan
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Patent number: 7215072Abstract: A stable field-emission electron source that does not suffer from a current drop even after a high-current density operation for a long time is provided. The field-emission electron source includes: a substrate; an insulating layer that is formed on the substrate and that has a plurality of openings; cathodes arranged at the respective openings in order to emit electron beams; a lead electrode formed on the insulating layer in order to control emission of electrons from the respective cathodes; and a surface-modifying layer formed on the surface of each of the cathodes emitting electrons, comprising a chemical bond between a cathode material composing the cathodes and a material different from the cathode material.Type: GrantFiled: March 23, 2004Date of Patent: May 8, 2007Assignees: Matsushita Electric Industrial Co., Ltd., National Institute of Advanced Industrial Science and TechnologyInventors: Keisuke Koga, Makoto Yamamoto, Akinori Shiota, Seigo Kanemaru, Masayoshi Nagao
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Patent number: 7202596Abstract: An electron emitter is formed by in situ growth from the vapor on catalyst clusters that are adhered by an adhesion layer to a conductive electrode. The emitter comprises hemispheroidal nanofiber clusters that emit electrons at low field strengths and high current densities, producing bright light by the interaction of the electrons and a fluorescent and/or phosphorescent film on an anode spaced across an evacuated gap. The nanofibers may be grown such that the nanofiber clusters are entangled, restricting movement of individual nanofibers.Type: GrantFiled: January 9, 2004Date of Patent: April 10, 2007Assignee: Electrovac AGInventors: Xinhe Tang, Ernst Hammel
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Patent number: 7193357Abstract: A field emission backlight device may include a first substrate and a second substrate separate from and roughly parallel to each other, a first anode electrode and a second anode electrode that face each other on inner surfaces of the first substrate and the second substrate, and cathode electrodes separate from and roughly parallel to one another between the first substrate and the second substrate. It may also include electron emission sources disposed on the cathode electrodes to emit electrons by an electric field and a phosphorous layer disposed on the first anode electrode or the second anode electrode.Type: GrantFiled: February 11, 2005Date of Patent: March 20, 2007Assignee: Samsung SDI Co., Ltd.Inventors: Jun hee Choi, Byong-gwon Song, Moon-jin Shin, Andrei Zoulkarneev, Deuk-seok Chung, Min-jong Bae
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Patent number: 7175495Abstract: A method of manufacturing a field emission device having emitter shapes, comprise the steps of forming a first original plate having a major surface provided with emitter shapes, by cutting a surface portion of a base material, forming a first material layer on the major surface of the first original plate on which the emitter shapes are provided; separating the first material layer from the first original plate, thereby obtaining a second original plate having recesses onto which the emitter shapes on the first original plate are transferred, forming a second material layer on a major surface of the second original plate on which the recesses are provided; and separating the second material layer from the second original plate, thereby to obtain a substrate having projections portions onto which shapes of the recesses of the second original plate are transferred.Type: GrantFiled: February 27, 2003Date of Patent: February 13, 2007Assignee: Kabushiki Kaisha ToshibaInventors: Masayuki Nakamoto, Atsuo Inoue
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Patent number: 7173366Abstract: Provided is a field emission display (FED) with a carbon nanotube emitter and a method of manufacturing the same. A gate stack that surrounds the CNT emitter has a mask layer that covers an emitter electrode adjacent to the CNT emitter, and a gate insulating film, a gate electrode, a focus gate insulating film (SiOx, X<2), and a focus gate electrode formed on the mask layer. The focus gate insulating film has a thickness 2 ?m or more, and preferably 3˜15 ?m and is preferably made using PECVD. A flow rate of silane and nitric acid for forming the focus gate insulating film and/or the gate insulating film are maintained at 50˜700 sccm and 700˜4,500 sccm, respectively. By doing so and by making the oxide thick, the oxide is less apt to crack and thus less apt to generate a leakage current.Type: GrantFiled: August 12, 2004Date of Patent: February 6, 2007Assignee: Samsung SDI Co., Ltd.Inventors: Jun-Hee Choi, Andrei Zoulkarneev
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Patent number: 7161285Abstract: A fabrication method for an emitter includes the steps of forming on a glass substrate a CNT film which contains a plurality of carbon nanotubes (CNTs) and constitutes an emitter electrode, forming a gate electrode via an insulating film on the CNT film, forming a plurality of gate openings in the gate electrode and the insulating film, and aligning upright the CNTs in the gate opening. The upright alignment generates a stable uniform emission current and provides excellent emission characteristics.Type: GrantFiled: November 19, 2001Date of Patent: January 9, 2007Assignee: NEC CorporationInventors: Akihiko Okamoto, Kazuo Konuma, Yoshinori Tomihari, Fuminori Ito, Yuko Okada
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Patent number: 7157848Abstract: A field emission device for use as a backlight of a liquid crystal display comprises a conductive anode having a light-emitting layer and a cathode separated from the anode by a spacer. The cathode comprises nanofiber electron emitters. For example, the nanofiber electron emitters comprise a substrate, a conductive film adhered to the substrate and a plurality of isolated, hemispheroidal nanofiber clusters that are capable of emitting electrons at high current density and low field strength.Type: GrantFiled: January 9, 2004Date of Patent: January 2, 2007Assignee: Electrovac Fabrikation Elektrotechnischer Spezialartikel GmbHInventors: Xinhe Tang, Ernst Hammel, Daniel Den Engelsen, Edward Cosman, Cornelis Kortekaas
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Patent number: 7156715Abstract: A triode structure of a field emission display and fabrication method thereof. A plurality of cathode layers arranged in a matrix is formed overlying a dielectric layer. A plurality of emitting layers arranged in a matrix is formed overlying the cathode layers, respectively. A plurality of lengthwise-extending gate lines is formed on the dielectric layer, in which each of the gate layers is disposed between two adjacent columns of the cathode layers.Type: GrantFiled: April 19, 2005Date of Patent: January 2, 2007Assignee: Industrial Technology Research InstituteInventors: Chun-Tao Lee, Cheng-Chung Lee, Jyh-Rong Sheu, Yu-Yang Chang, Jia-Chong Ho, Yu-Wu Wang
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Patent number: 7154214Abstract: A structure of a coplanar gate-cathode of triode CNT-FED and a manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, and formed on the substrate by Imprint Lithography and the plurality of dielectric openings are made by Imprint Lithography. The gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.Type: GrantFiled: June 9, 2004Date of Patent: December 26, 2006Assignee: Industrial Technology Research InstituteInventors: Ching-Hsun Chao, Jane-Hway Liao, Jyh-Rong Sheu, Yu-Yang Chang, Cheng-Chung Lee
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Patent number: 7144287Abstract: Systems and methods are described for individually electrically addressable carbon nanofibers on insulating substrates. A method includes forming an electrically conductive interconnect on at least a part of an insulating surface on a substrate; and growing at least one fiber that is coupled to the electrically conductive interconnect.Type: GrantFiled: November 7, 2005Date of Patent: December 5, 2006Assignee: UT-Battelle, LLCInventors: Michael A. Guillorn, Timothy Eric McKnight, Vladimir I. Merkulov, Anatoli Vasilievich Melechko, Michael Leon Simpson
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Patent number: 7135823Abstract: An image forming apparatus comprising: a cathode; a gate; an anode; an electron emitting element arranged on the cathode; an image forming member that is arranged opposite to the electron emitting element; a deflection electrode that deflects the orbit of the electron emitted from the electron emitting element and headed toward the anode; and a driver, wherein assuming that an electric field required to start electron emission from the electron emitting element is Ee, that an electric field applied to the electron emitting element by applying voltage to the anode is Ea and that an electric field applied to the electron emitting element by applying voltage to the gate is Eg, the driver applies voltages to the cathode, the gate, and the anode in such a way that (i) Ea>Ee or (ii) Ea+Eg>Ee and Ea>Eg is satisfied.Type: GrantFiled: October 1, 2004Date of Patent: November 14, 2006Assignee: Canon Kabushiki KaishaInventors: Noritake Suzuki, Shigeki Yabu
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Patent number: 7129626Abstract: A pixel structure and an edge-emitter field-emission display device having a first substrate or backplate including a cathode disposed thereon and a second substrate or faceplate including an anode disposed thereon, wherein the anode on the second substrate or faceplate has a light emitting film. The cathode may define a first bus of an X-Y bus array and the anode may define a second bus of the X-Y bus array. Alternatively, the first substrate may further include a control gate disposed thereon, wherein the cathode defines a first bus of an X-Y bus array and the control gate defines a second bus of the X-Y bus array.Type: GrantFiled: March 20, 2002Date of Patent: October 31, 2006Assignee: Copytele, Inc.Inventors: Alexander Kastalsky, Sergey Shokhor, Frank J. DiSanto, Denis A. Krusos, Boris Gorfinkel, Nikolai Abanshin
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Patent number: 7129631Abstract: A flat panel field emission device includes a black matrix formed from an electrically insulative material such as praseodymium-manganese oxide. The insulative black matrix increases image contrast and reduces power consumption. For field emission devices which utilize a switched anode for selectively activating pixels, the insulative material reduces or eliminates problems associated with short circuiting of the pixels.Type: GrantFiled: September 7, 2004Date of Patent: October 31, 2006Assignee: Micron Technology, Inc.Inventor: Robert T. Rasmussen
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Patent number: 7102279Abstract: An FED has a cathode, an anode and an insulating supporting device. The cathode has a plurality of cathode electron emitter layers and a cathode substrate. The cathode has a plurality of cathode ribs disposed on the cathode substrate, and the cathode ribs are used for laterally separating any respective two cathode ribs. The anode has a phosphors layer and an anode substrate. The insulating supporting device is arranged between the cathode ribs and the anode, and has a reflection layer facing the anode and a gate made of a conductive material and disposed above the cathode ribs. The reflection layer is capable of reflecting light emitted from the phosphors layer.Type: GrantFiled: June 30, 2004Date of Patent: September 5, 2006Assignee: Teco Nanotech Co., Ltd.Inventors: Kuei-Wen Cheng, Shie-Heng Lee
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Patent number: 7091654Abstract: A method for fabricating field emitters from a conductive or semiconductive substrate. A layer of low work function material may be formed on the substrate. Emission tips that include such a low work function material may have improved performance. An etch mask appropriate for forming emission tips is patterned at desired locations over the substrate and any low work function material thereover. An anisotropic etch of at least the substrate is conducted to form vertical columns therefrom. A sacrificial layer may then be formed over the vertical columns. A facet etch of each vertical column forms an emission tip of the desired shape. If a sacrificial layer was formed over the vertical columns prior to formation of emission tips therefrom, the remaining material of the sacrificial layer may be utilized to facilitate the removal of any redeposition materials formed during the facet etch.Type: GrantFiled: August 27, 2001Date of Patent: August 15, 2006Assignee: Micron Technology, Inc.Inventors: Guy T. Blalock, Sanh D. Tang, Zhaohui Huang
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Patent number: 7078716Abstract: By using a large area cathode, an electron source can be made that can irradiate a large area more uniformly and more efficiently than currently available devices. The electron emitter can be a carbon film cold cathode, a microtip or some other emitter. It can be patterned. The cathode can be assembled with electrodes for scanning the electron source.Type: GrantFiled: January 27, 2004Date of Patent: July 18, 2006Assignee: Nano-Proprietary, Inc.Inventors: Richard L Fink, Leif H. Thuesen
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Patent number: 7075223Abstract: In an electron beam apparatus including an electron source and an electron beam irradiation member, a potential specifying plate including openings through which an electron transmits is provided between the electron source and the electron beam irradiation member. A spacer is located between the electron beam irradiation member and the potential specifying plate. In the case where a distance between a region between one opening of the potential specifying plate near the spacer and the spacer and the electron beam irradiation member is D1 and a distance between a region between that opening and another opening not near the spacer and the electron beam irradiation member is given by D2, if D1<D2 is satisfied, a deviation of an orbit of an electron beam emitted from the electron source is suppressed, so that it is possible to produce a high quality image.Type: GrantFiled: October 15, 2003Date of Patent: July 11, 2006Assignee: Canon Kabushiki KaishaInventor: Yoichi Ando
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Patent number: 7064474Abstract: A field emission device includes a substrate (11) and a carbon nanotube array (12) formed thereon. Carbon nanotubes (120) of the carbon nanotube array are parallel to each other and cooperatively form a plurality of substantially rod-shaped lower portions (121, 121?) and a plurality of corresponding tapered tips (122, 122?) above the lower portions. Each lower portion and tapered tips have a plurality of carbon nanotubes. Distances between adjacent tips are approximately uniform, and are more than one micrometer. Preferably, the distance is in the range from 1 to 30 micrometers. The field emission device with this structure has reduced shielding between adjacent carbon nanotubes and has decreased threshold voltage required for field emission by the carbon nanotubes. The field emission device also contributes to an improved field emission concentration and efficiency.Type: GrantFiled: March 26, 2003Date of Patent: June 20, 2006Assignees: Tsinghua University, Hon Hai Precision Ind. Co., Ltd.Inventors: Liang Liu, ShouShan Fan
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Patent number: 7064476Abstract: Electron emitters and a method of fabricating emitters are disclosed, having a concentration gradient of impurities, such that the highest concentration of impurities is at the apex of the emitters and decreases toward the base of the emitters. The method comprises the steps of doping, patterning, etching, and oxidizing the substrate, thereby forming the emitters having impurity gradients.Type: GrantFiled: January 12, 2001Date of Patent: June 20, 2006Assignee: Micron Technology, Inc.Inventor: David A. Cathey
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Patent number: 7049739Abstract: A field emission device using carbon nanotubes (CNTs) is provided. The field emission device includes a cathode on which a plurality of CNT emitters are arranged, a gate insulating layer having a through hole through which electrons emitted from the CNT emitters pass, and a gate electrode which corresponds to the through hole of the gate insulating layer and has an enlongated gate hole that forms an electric field having different strengths in a first direction and in a second direction orthogonal to the first direction.Type: GrantFiled: December 10, 2003Date of Patent: May 23, 2006Assignee: Samsung SDI Co., Ltd.Inventors: Yong-wan Jin, Jung-woo Kim, Jae-eun Jung, Young-jun Park
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Patent number: 7034444Abstract: To provide an electron-emitting device, an electron source, an image-forming apparatus, and a method for manufacturing the electron-emitting device whereby it is possible to reduce a device capacity and a driving voltage, to improve the efficiency of emitting electrons, and to obtain high-resolution beam. The extracting electrode and the cathode electrode are provided on an insulating substrate, a layer having growth selectivity of fibrous carbon is formed on the cathode electrode, and the fibrous carbon is grown via catalyst particles formed on the layer.Type: GrantFiled: August 30, 2001Date of Patent: April 25, 2006Assignee: Canon Kabushiki KaishaInventor: Takeo Tsukamoto
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Patent number: 7026750Abstract: An electron emission element of the present invention comprises a substrate, and a protrusion protruding from the substrate and including boron-doped diamond. The protrusion comprises a columnar body. And a tip portion of the protrusion comprises an acicular body sticking out therefrom. The distance r [cm] between a center axis and a side face in the columnar body and the boron concentration Nb [cm?3] in the diamond satisfy the relationship represented by the following formula (1): r > 10 4 Nb .Type: GrantFiled: September 22, 2003Date of Patent: April 11, 2006Assignees: Sumitomo Electric Industries, Ltd., Japan Fine Ceramics CenterInventors: Yoshiki Nishibayashi, Takahiro Imai, Yutaka Ando
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Patent number: 7012362Abstract: Provided are electron-emitting devices, electron sources, and image-forming apparatus improved in electron emission efficiency and in convergence of trajectories of emitted electrons. An electron-emitting device has a first electrode and a second electrode placed in opposition to each other with a gap between first and second electrodes on a surface of a substrate, and a plurality of fibers electrically connected to the first electrode and containing carbon as a main component, and the fibers are placed on a surface of the first electrode facing the second electrode.Type: GrantFiled: August 29, 2001Date of Patent: March 14, 2006Assignee: Canon Kabushiki KaishaInventors: Shinichi Kawate, Takeo Tsukamoto
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Patent number: 7009331Abstract: A carbon nano-tube field emission display has a plurality of strip shaped gates, wherein the strip shaped gate of the triode structure is in place of the conventional hole shaped gate, and morecover, a plurality of cathode electrons are induced by the electric force from the side of the gate. Therefore, when the carbon nano-tube electron emission source emits electrons, which are controlled under the strip shaped gate, the diffusion direction of the electron beam is confined in the same direction. Consequently, controlling the image pixel and using the particular advantage of the triode-structure field emission display significantly improve the image uniformity and the luminous efficiency.Type: GrantFiled: December 2, 2003Date of Patent: March 7, 2006Assignee: Industrial Technology Research InstituteInventors: Jyh-Rong Sheu, Chun-Tao Lee, Shin-Chiuan Jiang, Yu-Yang Chang, Cheng-Chung Lee
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Patent number: 7002287Abstract: A protected faceplate structure of a field emission display device is disclosed in one embodiment. Specifically, in one embodiment, the present invention recites a faceplate of a field emission display device wherein the faceplate of the field emission display device is adapted to have phosphor containing wells disposed above one side thereof. The present embodiment is further comprised of a barrier layer which is disposed over the one side of said faceplate which is adapted to have phosphor containing wells disposed thereabove. The barrier layer of the present embodiment is adapted to prevent degradation of the faceplate. Specifically, the barrier layer of the present embodiment is adapted to prevent degradation of the faceplate due to electron bombardment by electrons directed towards the phosphor containing wells.Type: GrantFiled: July 28, 2000Date of Patent: February 21, 2006Assignees: Candescent Intellectual Property Services, Inc., Candescent Technologies CorporationInventors: Bob L. Mackey, Duan A. Haven, Arthur J. Learn, John D. Porter, Theodore S. Fahlen, Shiyou Pei, William J. Cummings
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Patent number: 6992434Abstract: An electron-emitting device comprises a pair of opposing electrodes formed on a substrate, an electroconductive film having a fissure arranged between the pair of electrodes, and at least a film having a gap and containing carbon as a main ingredient, arranged at an end portion of the electroconductive film facing the fissure. The fissure is a region of 95% or more of a length in the fissure direction, has a width of from 60 nm or more to 800 nm or less, and has a difference of 300 nm or less between a maximum value and a minimum value of the width, thereby providing high withstanding voltage without forming branched fissure.Type: GrantFiled: September 25, 2002Date of Patent: January 31, 2006Assignee: Canon Kabushiki KaishaInventors: Masahiro Terada, Yasuko Tomida, Makoto Kojima, Tsuyoshi Furuse, Taku Shimoda
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Patent number: 6982519Abstract: Systems and methods are described for individually electrically addressable carbon nanofibers on insulating substrates. An apparatus includes an electrically conductive interconnect formed on at least a part of an insulating surface on a substrate; and at least one vertically aligned carbon nanofiber coupled to the electrically conductive interconnect. A kit includes a substrate having an insulating surface; an electrically conductive interconnect formed on at least a part of the insulating surface; and at least one vertically aligned carbon nanofiber coupled to the electrically conductive interconnect.Type: GrantFiled: September 26, 2001Date of Patent: January 3, 2006Assignee: UT-Battelle LLCInventors: Michael A. Guillorn, Timothy Eric McKnight, Vladimir I. Merkulov, Anatoli Vasilievich Melechko, Michael Leon Simpson
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Patent number: 6975063Abstract: The present invention is directed towards metallized carbon nanotubes, methods for making metallized carbon nanotubes using an electroless plating technique, methods for dispensing metallized carbon nanotubes onto a substrate, and methods for aligning magnetically-active metallized carbon nanotubes. The present invention is also directed towards cold cathode field emitting materials comprising metallized carbon nanotubes, and methods of using metallized carbon nanotubes as cold cathode field emitters.Type: GrantFiled: April 4, 2003Date of Patent: December 13, 2005Assignee: SI Diamond Technology, Inc.Inventors: Dongsheng Mao, Zvi Yaniv, Richard Lee Fink
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Patent number: 6972512Abstract: A field emission display with reflection layer has an improved insulating supporting device. The major feature is to place a reflection layer on the insulating supporting device. From the special structure, the insulating supporting device can enhance the emission efficiency of the phosphors powder rather than the primary function of the insulating support. The field emission display with reflection layer has an anode structure, a cathode structure and the supporting device.Type: GrantFiled: March 5, 2004Date of Patent: December 6, 2005Assignee: Teco Nanotech Co., LTDInventors: Chi Hung Hsiao, Jin-Shou Fang, Kuei-Wen Cheng
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Patent number: 6960876Abstract: An electron emission device with nano-protrusions is described. Electrons are emitted from the nano-protrusions and directed by one or more conductors into beams. The beams may be shaped to be collimated, diverged, or converged. The shaped beams from one or more nano-protrusions may be focused onto a target spot through the use of additional electron optics.Type: GrantFiled: February 27, 2003Date of Patent: November 1, 2005Assignee: Hewlett-Packard Development Company, L.P.Inventors: Huei-Pei Kuo, Si-Ty Lam, Sam Burriesci, Steven Louis Naberhuis, Henryk Birecki, Xia Sheng
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Patent number: 6958571Abstract: A method of manufacturing an electron-emitting element (20) for emitting electrons from diamond includes the first step of forming a diamond columnar member (25) on a diamond substrate (21), and the second step of forming an electron-emitting portion (30) having a base portion (36) and a sharp-pointed portion (32) which is located closer to a distal end side than the base portion (36) and emits the electrons by performing etching processing with respect to the columnar member (25).Type: GrantFiled: August 30, 2001Date of Patent: October 25, 2005Assignees: Sumitomo Electric Industries, Ltd., Japan Fine Ceramics CenterInventors: Yoshiki Nishibayashi, Yutaka Ando, Kiichi Meguro, Takahiro Imai
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Patent number: 6949873Abstract: An amorphous diamond electrical generator having a cathode at least partially coated with amorphous diamond material and an intermediate member coupled between the cathode and an anode. The amorphous diamond material can have at least about 90% carbon atoms with at least about 20% of the carbon atoms bonded in a distorted tetrahedral coordination. The amorphous diamond coating has an energy input surface in contact with a base member of the cathode and an electron emission surface opposite the energy input surface. The electron emission surface can have an asperity height of from about 10 to about 1,000 nanometers and is capable of emitting electrons upon input of a sufficient amount of energy. The intermediate member can be coupled to the electron emission surface of the amorphous diamond coating such that the intermediate member has a thermal conductivity of less than about 100 W/mK and a resistivity of less than about 80 ??-cm at 20° C.Type: GrantFiled: June 11, 2003Date of Patent: September 27, 2005Inventor: Chien-Min Sung
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Patent number: 6946780Abstract: A carbon body has a structure for producing a planar electron source in a simple manner; a process for producing the carbon body; and an electric field emission electron source using the carbon body. The carbon body is a thin layer having a front surface and a back surface, and at least the front surface is a continuous curved wall, as viewed in plan, having a netlike structure.Type: GrantFiled: June 4, 2001Date of Patent: September 20, 2005Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Akihiko Hosono, Shuhei Nakata, Masaaki Hiraki
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Patent number: 6943493Abstract: A flat-panel display includes a front glass, glass substrate, cathodes, gate electrodes, phosphor films, and anodes. The front glass has translucency at least partly. The substrate is placed to oppose the front glass through a vacuum space. The cathodes are formed on the substrate. The gate electrodes are placed in the vacuum space and spaced apart from the cathodes. The phosphor layers and anodes are formed on a surface of the front glass which opposes the substrate. Each cathode includes a metal member having many opening portions which is mounted on the substrate, and a conductive material containing carbon nanotubes filled in the mesh-like opening portions. A method of manufacturing a flat-panel display is also disclosed.Type: GrantFiled: December 11, 2002Date of Patent: September 13, 2005Assignee: Noritake Co., Ltd.Inventors: Sashiro Uemura, Junko Yotani
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Patent number: 6943488Abstract: Provided are electron-emitting devices improved in durability during concentration of an electric field and thus rarely suffering chain discharge breakdown. An electron-emitting device has an electroconductive film, a layer placed on the electroconductive film and containing aluminum oxide as a main component, a pore placed in the layer containing aluminum oxide as a main component, and an electron emitter placed in the pore and containing a material of the electroconductive film, and the electron emitter is porous and is electrically connected to the electroconductive film.Type: GrantFiled: September 17, 2001Date of Patent: September 13, 2005Assignee: Canon Kabushiki KaishaInventors: Nobuhiro Yasui, Tohru Den
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Patent number: 6940218Abstract: A field-emission electron source element includes a cathode substrate, an insulating layer that is formed on the cathode substrate and has an opening, a lead electrode formed on the insulating layer, and an emitter formed in the opening. A surface layer of an electron emitting region of the emitter is doped with at least one reducing element selected from the group consisting of hydrogen and carbon monoxide. Further, an image display apparatus including the above-mentioned field-emission electron source element is provided. This makes it possible to obtain not only a stable field-emission electron source element that does not cause a current drop even after a high current density operation for a long time but also a high-performance image display apparatus that can maintain a stable display performance over a long period of time.Type: GrantFiled: August 8, 2003Date of Patent: September 6, 2005Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Keisuke Koga, Toru Kawase, Kenichi Honda, Tetsuya Norikane
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Patent number: 6933665Abstract: Improved methods and structures are provided for an array of vertical geometries which may be used as emitter tips, as a self aligned gate structure surrounding field emitter tips, or as part of a flat panel display. The present invention offers controlled size in emitter tip formation under a more streamlined process. The present invention further provides a more efficient method to control the gate to emitter tip proximity in field emission devices. The novel method of the present invention includes implanting a dopant in a patterned manner into the silicon substrate and anodizing the silicon substrate in a controlled manner causing a more heavily doped region in the silicon substrate to form a porous silicon region.Type: GrantFiled: July 9, 2002Date of Patent: August 23, 2005Assignee: Micron Technology, Inc.Inventors: Terry L. Gilton, Paul A. Morgan
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Patent number: 6927534Abstract: A field emission device (FED) and a method for fabricating the FED are provided. The FED includes micro-tips with nano-sized surface features, and a focus gate electrode over a gate electrode, wherein one or more gates of the gate electrode is exposed through a single opening of the focus gate electrode. In the FED, occurrence of arcing is suppressed. Although an arcing occurs in the FED, damage of a cathode and a resistor layer is prevented, so that a higher working voltage can be applied to the anode. Also, due to the micro-tips with nano-sized surface features, the emission current density of the FED increases, so that a high-brightness display can be achieved with the FED. The gate turn-on voltage can be lowered due to the micro-tip as a collection of nano-sized tips, thereby reducing power consumption.Type: GrantFiled: August 7, 2003Date of Patent: August 9, 2005Assignee: Samsung SDI Co., Ltd.Inventors: Jun-hee Choi, Seung-nam Cha, Hang-woo Lee
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Patent number: 6922014Abstract: A field emission display includes a first substrate, cathode electrodes formed on the first substrate, conductive layers formed on the cathode electrodes having first apertures to expose portions of the cathode electrodes, an insulating layer formed on the conductive layers and having second apertures communicating with the first apertures, gate electrodes formed on the insulating layer and having third apertures communicating with the second apertures, emitters formed on the cathode electrodes and within the first apertures, a second substrate provided opposing the first substrate with a predetermined gap therebetween; and an anode layer formed on the second substrate, and phosphor layers formed on the anode electrode. In a first direction, second and third measurements of the second and third apertures are larger than a first measurement of the first apertures, and each of the emitters is realized in an integral unit.Type: GrantFiled: October 17, 2002Date of Patent: July 26, 2005Assignee: Samsung SDI Co., Ltd.Inventors: Tae-Sik Oh, Jong-Min Kim, Sang-Jin Lee
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Patent number: 6917147Abstract: A triode type cathode structure including a cathode assembly composed of a cathode electrode at least one electron emitter and a resistive layer inserted between the cathode electrode and the at least one electron emitter to connect them together electrically. The triode cathode structure also includes a grid electrode separated from the cathode assembly by a layer of electrical insulation. The cathode electrode is arranged in a first plane and the at least one electron emitter is arranged in a second plane parallel to the first plane and the cathode electrode and each electron emitter are separated by a same distance measured in a third plane parallel to the first and second planes.Type: GrantFiled: February 19, 2003Date of Patent: July 12, 2005Assignee: Commissariat a l'Energie AtomiqueInventors: Jean Dijon, Adeline Fournier, Brigitte Montmayeul, Aimé Perrin
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Patent number: 6914381Abstract: A flat panel display includes an electron emitter plate provided with electron emitters, a phosphor plate provided with phosphors and a space defined by the electron emitter plate and the phosphor plate for form a substantial vacuum atmosphere therebetween, wherein a great number of fine recess structures are formed on the surface of a metal film formed on the electron emitter plate, and fine fibered substances or carbon nanotubes or substances containing the fine fibered substances or carbon nanotubes are arranged on the fine recess structures to form electron emitters.Type: GrantFiled: July 17, 2002Date of Patent: July 5, 2005Assignee: Hitachi, Ltd.Inventors: Makoto Okai, Takahiko Muneyoshi, Tomio Yaguchi, Nobuaki Hayashi