Abstract: The present invention provides a method for producing a fluoride fluorescent material, the method comprising: contacting potassium ions with first complex ions comprising tetravalent manganese ions and second complex ions comprising at least one member selected from the group consisting of elements belonging to Groups 4 and 14 of the Periodic Table in a liquid medium comprising hydrogen fluoride to obtain a dispersion containing fluoride particles represented by the following formula (I): K2[M1-bMn4+bF6]??(I) wherein M is the at least one member selected from the group consisting of elements belonging to Groups 4 and 14 of the Periodic Table, and b satisfies the relationship: 0<b<0.2; adding a reducing agent to the dispersion; and contacting the fluoride particles in the dispersion to which the reducing agent is added with at least one of additional second complex ions and additional potassium ions in the presence of hydrogen fluoride to obtain a fluoride fluorescent material.

Abstract: The present invention provides an efficient red fluorescent material and a method for producing the same, provides a white light source and an illuminating device each of which uses this red fluorescent material to achieve snow-white lighting, and furthermore provides a liquid crystal display having excellent color reproduction. The red fluorescent material contains an element (A), europium (Eu), silicon (Si), carbon (C), oxygen (O), and nitrogen (N), at an atomic ratio of the following in compositional formula (1). [A(m-x)Eux][Si(9-y)Cy]OnN[12-2(n-m)/3] Note that, in the compositional formula (1), element A is group 2 element including at least calcium (Ca) and strontium (Sr). Also, note that, in the composition formula (1), m, x, y, and n satisfy 3<m<5, 0<x<1, 0<y<9, and 0<n<10, respectively. Such red fluorescent material is able to improve quantum efficiency, compared with a red fluorescent material which does not contain calcium (Ca) but contains strontium (Sr) as the element A.

Abstract: A display device includes a plurality of main pixels. Each main pixel includes a plurality of sub-pixels. At least two of the sub-pixels emit light of different colors. The at least two sub-pixels are different in size.

Abstract: In a first aspect of the present inventive subject matter, a lighting device includes a light-emitting device 1 including p-contact and n-contact that are separately arranged from each other on a first surface of the light-emitting element and a phosphor layer including a phosphor particle and covering the light-emitting element 1 except the p-contact and n-contact of the light-emitting element, the phosphor layer includes a higher density of the phosphor particle on a position of the first surface between the p-contact and the n-contact of the light-emitting element than on a position of a second surface that is an opposite surface of the first surface 1b of the light-emitting element.

Abstract: According to one embodiment, the phosphor exhibits a luminescence peak in a wavelength ranging from 500 to 600 nm when excited with light having an emission peak in a wavelength ranging from 250 to 500 nm. The phosphor has a composition represented by (M1-xCex)2yAlzSi10-zOuNw (M represents Sr and a part of Sr may be substituted by at least one selected from Ba, Ca, and Mg; x, y, z, u, and w satisfy 0<x?1, 0.8?y?1.1, 2?z?3.5, 0<u?1, 1.8?z?u, and 13?u+w?15). The phosphor has a crystalline aspect ratio of 1.5 to 10.

Abstract: In one embodiment, an LED light bulb includes an LED module, a base portion on which the LED module is disposed, and a globe attached to the base portion. The LED module includes an ultraviolet to violet light-emitting LED chip mounted on a substrate. A lighting circuit and a bayonet cap are provided in and on the base portion. A fluorescent film is provided on an inner surface of the globe, and emits white light by absorbing ultraviolet to violet light emitted from the LED chip. The fluorescent film has a film thickness in a range of 80 to 800 ?m. In the LED light bulb, an amount of ultraviolet light which leaks from the globe is 0.1 mW/nm/lm or less.

Abstract: An organic light emitting display device may include a substrate, a first electrode, a light emitting structure, a second electrode and a nanostructure. The first electrode may be disposed over the substrate. The light emitting structure may be disposed over the first electrode. The second electrode may be disposed over the light emitting structure. A plurality of nanoparticles may be disposed over the second electrode. The plurality of nanoparticles is capable of causing surface plasmon resonance by light. At least some of the plurality of nanoparticles have materials, sizes and shapes determined to cause surface plasmon resonance by light having a predetermined wavelength and emitted from the light emitting structure.

Abstract: The present invention provides a new phosphor with a controllable emission wavelength without using a number of rare and expensive raw materials in forming the composition. The phosphor includes a compound including a fluorescent ion and having a garnet structure including a rare earth element, aluminum, and oxygen. The compound has such a composition that a combination of the rare earth element and the aluminum of the compound is partially replaced with a combination of alkaline earth metal and zirconium (Zr) or alkaline earth metal and hafnium (Hf).

Abstract: The present invention relates to an organic electro-luminescence display device and a method for fabricating the same, in which damage to a pad portion is prevented for improving yield. The organic electro-luminescence display device includes a thin film transistor array unit formed on a front surface of a lower substrate and a pad portion extended from the thin film transistor array unit, an organic EL array unit on the thin film transistor array unit having a matrix of organic EL cells, and a protective member for protecting the organic EL array unit and the thin film transistor array unit and exposing the pad portion to an outside, wherein the lower substrate has a thickness of a first region overlapped with the pad portion thicker than a thickness of a second region overlapped with the thin film transistor array unit.

Abstract: Provided are: a phosphor that has a crystal structure identical to a CaAlSiN3 crystal phase, which absorbs light of a light emitting element such as an LED and emits red light, as a host crystal and exhibits luminous efficiency more excellent than those of conventional phosphors; and a light emitting device which has high luminance and long service life by the use of this phosphor. A powder phosphor, which is represented by general formula Cax(Si,Al)2(N,O)3+y (wherein 0.75?x?0.92 and ?0.2?y?0.2), and wherein some of Ca element is substituted by Eu element. This powder phosphor has an Si/Al ratio (molar ratio) of from 0.9 to 1.55 (inclusive), an Eu content of from 0.01 at % to 0.3 at % (inclusive), and an amount of intragranular solid-solved oxygen of from 0.4% by mass to 0.7% by mass (inclusive).

Abstract: A method for producing electroluminescent textiles and to electroluminescent textiles produced accordingly is provided. A layer arrangement (10) of an electroluminescent textile comprises a textile substrate (1), a protective layer (2), a first transparent conductive layer or front electrode (3), a light-emitting layer (4), a dielectric layer (5), a second conductive layer or back electrode (6), a conductive rail (7), and a cover layer (8). As associated method is further provided.

Abstract: A light emitting module according to one embodiment includes a substrate; a light emitting body disposed on the substrate; and a phosphor layer having a first phosphor and a second phosphor which are excited by emitted light of the light emitting body. The first phosphor has a light emitting peak whose half-value width is 20 nm or less in a wavelength range from 610 nm to less than 650 nm, and the second phosphor has the light emitting peak in the wavelength range between a peak wavelength of a light emitting spectrum of the light emitting body and the peak wavelength of the light emitting spectrum of the first phosphor. Then, a distribution of the first phosphor in the phosphor layer has density gradient, where the density of the first phosphor increases toward at least one end of the phosphor layer in a direction perpendicular to the substrate.

Abstract: Embodiments of the present invention are directed to nitride-based, red-emitting phosphors in red, green, and blue (RGB) lighting systems, which in turn may be used in backlighting displays and warm white-light applications. In particular embodiments, the red-emitting phosphor is based on CaAlSiN3 type compounds activated with divalent europium. In one embodiment, the nitride-based, red emitting compound contains a solid solution of calcium and strontium compounds (Ca,Sr)AlSiN3:Eu2+, wherein the impurity oxygen content is less than about 2 percent by weight. In another embodiment, the (Ca,Sr)AlSiN3:Eu2+ compounds further contains a halogen in an amount ranging from about zero to about 2 atomic percent, where the halogen may be fluorine (F), chlorine (Cl), or any combination thereof. In one embodiment at least half of the halogen is distributed on 2-fold coordinated nitrogen (N2) sites relative to 3-fold coordinated nitrogen (N3) sites.

Abstract: The present invention provides a fluoride fluorescent material comprising a chemical composition represented by the following formula (I): K2[M1-aMn4+aF6]??(I) wherein M is at least one element selected from the group consisting of elements belonging to Groups 4 and 14 of the Periodic Table, and a is a value that satisfies the relationship: 0<a<0.2, and a minimum value of a weight median diameter of the fluoride fluorescent material is 30 ?m.

Abstract: Disclosed are a touch screen integrated organic light emitting display device which has a thin profile and is implemented in a flexible type and a method for fabricating the same. The touch screen integrated organic light emitting display device includes a film substrate, a first etch stopper layer and a first buffer layer sequentially formed on the film substrate, a thin film transistor array including thin film transistors formed on the first buffer layer, organic light emitting diodes connected to the thin film transistors, a passivation layer covering the thin film transistor array and the organic light emitting diodes, a touch electrode layer contacting the passivation layer, a second buffer layer and a second etch stopper layer sequentially formed on the touch electrode layer, and a polarizing plate formed on the second etch stopper layer.

Abstract: Provided are a ceramic composite for light conversion, which is capable of maintaining a high radiant flux even when the proportion of Gd and Ce is increased to tune the fluorescence peak wavelength to the longer wavelength side, a process for producing the ceramic composite, and a light emitting device including the ceramic composite.

Abstract: In various embodiments, a luminophore composition for low pressure discharge lamps for generating radiation with a color temperature of greater than 4800 K having a very good general color rendering index of greater than 90, the luminophore composition including at least one halophosphate luminophore, a luminophore emitting in the red wavelength region, a luminophore emitting in the blue-green wavelength region, a europium-doped luminophore emitting in the blue wavelength region and a Tb-doped luminophore emitting in the green wavelength region, wherein the luminophore composition includes a luminophore emitting in an emission range in the visible region with wavelengths of greater than 380 nm and at least one emission band in the near ultraviolet and that the emitted intensity of the luminophore is smaller in the visible region than in the near ultraviolet region.

Abstract: A fluorescent material is represented by the following formula (I): M1yM2nOzNx:M3w??(I); wherein M1 is selected from Sc3+, Y3+, La3+, Sm3+, Gd3+, Pm3+, Er3+, Lu3+, and combinations thereof; M2 is selected from Al3+, In3+, Ga3+, and combinations thereof; M3 is selected from Tm3+, Bi3+, Tb3+, Ce3+, Eu3+, Mn3+, Er3+, Yb3+, Ho3+, Gd3+, Pr3+, Dy3+, Nd3+, and combinations thereof; 0.6?x/n?1.6, 0.54?y/n?0.6, 0<w/n?0.06, and 0?z/n?1.5. An illumination device including a light emitting element and the aforesaid fluorescent material is also disclosed.

Abstract: A display screen includes a substrate and a fluorescent material. The substrate includes a plurality of pixel regions arranged in an array, wherein each pixel region includes a fluorescent region and a transparent region, and the area of the transparent region is larger than the area of the fluorescent region. The fluorescent material is arranged in the fluorescent region and excited by an excitation light to emit a visible light to form an image. The above-mentioned display screen allows a viewer to see the images formed by the fluorescent region and the environmental image at the other side of display screen. A display system including the above-mentioned display screen is also disclosed.

Abstract: A white light emitting glass-ceramic. The chemical formula of the glass-ceramic is aSiO2.bAl2O3.cNaF.dCeF3.nDyF3.mAg, wherein a, b, c, d, n and m are, by mol part, 25-50, 15-30, 10-30, 10-25, 0.01-1 and 0.01-1, respectively, and a+b+c+d-100. A method for producing said glass-ceramic is also provided. Silver ion is doped in the glass-ceramic in the form of silver particles by means of sintering and reduction annealing treatment, and thus the luminescence properties of rare earth ion is improved.

Abstract: The present invention relates to a silicon oxynitride phosphor, a production method for same, and an optical element comprising same. According to one embodiment of the present invention, the silicon oxynitride phosphor is a silicon oxynitride phosphor comprising a compound represented by the following chemical formula 1, which emits light on being irradiated by means of a light source. Chemical formula 1: Sr2-zSi(O1-xNx)4:zEu2+, where 0<x<1 and 0<z?0.4.

Abstract: A light emitting device includes a substrate including a base member, a plurality of wiring portions disposed on a surface of the base member, a covering portion having openings respectively exposing a part of the wiring portions, a plurality of light emitting elements respectively electrically connected to the wiring portions exposed from the covering portion, and sealing members respectively sealing the light emitting elements. At least a part of the covering portion contains a light-storing material.

Abstract: A wavelength conversion structure comprises a sintered body comprising a mixture of a wavelength conversion material and a glass composition, wherein the wavelength conversion material comprises a phosphor and the glass composition comprises ZnO—BaO—SiO2—B2O3.

Abstract: Disclosed herein are emissive ceramic elements having low amounts of certain trace elements. Applicants have surprisingly found that a lower internal quantum efficiency (IQE) may be attributed to specific trace elements that, even at very low amounts (e.g., 50 ppm or less), can cause significant deleterious effects on IQE. In some embodiments, the emissive ceramic element includes a garnet host material and an amount of Ce dopant. The emissive ceramic element may, in some embodiments, have an amount of Na in the composition less than about 67 ppm, an amount of Mg in the composition less than about 23 ppm, or an amount of Fe in the composition less than about 21 ppm.

Abstract: The embodiment provides a red light-emitting fluorescent substance represented by the following formula (1): (M1-xECx)aM1bAlOcNd??(1). In the formula (1), M is an element selected from the group consisting of IA group elements, IIA group elements, IIIA group elements, IIIB group elements, rare earth elements and IVA group elements; EC is an element selected from the group consisting of Eu, Ce, Mn, Tb, Yb, Dy, Sm, Tm, Pr, Nd, Pm, Ho, Er, Cr, Sn, Cu, Zn, As, Ag, Cd, Sb, Au, Hg, Tl, Pb, Bi and Fe; M1 is different from M and is selected from the group consisting of tetravalent elements; and x, a, b, c and d are numbers satisfying the conditions of 0<x<0.2, 0.55<a<0.80, 2.10<b<3.90, 0<c?0.25 and 4<d<5, respectively. This substance emits luminescence having a peak in the wavelength range of 620 to 670 nm when excited by light of 250 to 500 nm.

Abstract: A glass emitting white light in itself, and a light-emitting element and a light-emitting device covered with the glass as stated above are provided. The white light-emitting glass is a glass emitting fluorescence at a region having a wavelength of 380 nm to 750 nm by excitation light with a wavelength of 240 nm to 405 nm, not containing crystal, and containing SnOx (where x=1 to 2, typically x=1 or 2), P2O5, and MnOy (where y=1 to 2, typically y=1 or 2). The light-emitting element and the light-emitting device are made up by covering a main surface of a semiconductor light-emitting element with the glass as stated above.

Abstract: A display device having a plurality of light-emitting elements that construct picture elements aligned on a TFT substrate in a formation of a matrix. The display device includes the plurality of light-emitting elements each having a flat surface portion and including a light-emitting layer, an anode, and a cathode; a plurality of driver elements each coupled to the light-emitting element; a plurality of capacitor elements each of which is coupled to the light emitting element and receives an image signal; a plurality of switching elements each of which is coupled to the capacitor element and the light emitting element and control input of the image signal to the capacitor; and an insulation layer having a contact hole formed over the driver element. The anode is formed on the insulation layer and coupled to the driver element via the contact hole.

Abstract: A white light emitting device includes: a blue light emitting diode (LED) which emits blue light; and a resin packing unit which encapsulates the blue LED, wherein the resin packing unit includes a first wavelength conversion material which, in response to being excited by the blue light, emits green light, a second wavelength conversion material which, in response to being excited by the blue light, emits red light, and a complex compound which absorbs light of a region in which the green light and the red light are mixed, the light of the region being included in white light implemented through a mixture of the green light and the red light excited together with the blue light.

Abstract: A highly reliable light-emitting device or lighting device is provided. Further, a light-emitting device or lighting device with a high manufacturing yield is provided. Provided is a light-emitting device having a contact structure which includes a separation layer having a shape typified by a reverse tapered shape in which an outline of the bottom portion is inside an outline of an upper portion and which utilizes the difference between an amount of a light-emitting layer extending inside the outline and that of an upper electrode extending inside the outline. Further, when the outline of the separation layer which forms the contact portion has a depression and a projection, the length of the contact portion can be increased, and thus, contact resistance can be reduced.

Abstract: A green-emitting phosphor having the formula AaBbCcOdNe,:RE, wherein A is a positively charged divalent element; B is a positively charged trivalent element; C is a positively charged tetravalent element; and RE is a rare earth activator. The parameter a ranges from about 0.5 to about 1.5; the parameter b ranges from about 0.8 to about 3.0; the parameter c ranges from about 3.5 to about 7.0; the parameter d ranges from about 0.1 to about 3.0; and the parameter e ranges from about 5.0 to about 11.0. A is at least one of Mg, Ca, Sr, Ba, and Zn; B (the letter) is at least one of B (boron), Al, Ga, and In; C (the letter) is at least one of C (carbon), Si, Ge, and Sn; O is oxygen; N is nitrogen; and RE is at least one of Eu, Ce, Pr, Tb, and Mn.

Abstract: Some embodiments disclosed herein include a ceramic body including a first region and a second region. The first region may include a host material and first concentration of a dopant that is effective to produce luminescence. The second region may include the host material and second concentration of the dopant. In some embodiments, the first region has an average grain size that is larger than an average grain of the second region. The ceramic body may, in some embodiments, exhibit superior internal quantum efficiency (IQE). Some embodiments disclosed herein include methods for the making and using the ceramic bodies disclosed herein. Also, some embodiments disclosed herein lighting apparatuses including the ceramic bodies disclosed herein.

Abstract: A luminescent cerium (Ce) doped compound emitting bright red light, comprising a calcium silicate nitride ternary system, such as CaSiN2-?O?:Ce3+, that crystallizes in a face-centered cubic unit cell with a lattice parameter of ˜a=14.88 ?. The Ce doped compound can be used for white light applications either: (i) to enhance the light quality of the system based on a blue LED with a yellow or green phosphor, (ii) as an orange phosphor in combination with a blue LED and a green phosphor, or (iii) as a red phosphor in a setup comprising a ultraviolet (UV) LED and red, green and blue (RGB) phosphors. Substitution of smaller elements on the Ca site or larger elements on the Si site leads to a decrease of the emission wavelength towards the yellow or orange region.

Abstract: Light emitting devices and methods are disclosed. In one embodiment a light emitting device can include a submount and a plurality of light emitting diodes (LEDs) disposed over the submount. At least a portion of the submount can include a reflective layer at least partially disposed below a solder mask. One or more layers within the submount may include one or more holes, a rough surface texture, or combinations thereof to improve adhesion within the device. The device can further include a retention material dispensed about the plurality of LEDs. Devices and methods are disclosed for improved solder mask adhesion.

Abstract: A light-emitting device is provided that can extract light in all directions and that has wide directivity. This light-emitting device includes: an elongated bar-shaped package extending sideways, the package being formed such that a plurality of leads are formed integrally with a first resin with part of the leads exposed; a light-emitting element that is fixed onto at least one of the leads and that is electrically connected to at least one of the leads; and a second resin sealing the light-emitting element. In the light-emitting device, the first resin and the second resin are formed of optically transparent resin, and the leads have outer lead portions used for external connection and protruding sideways from both left and right ends of the package.

Abstract: A red phosphor includes a nitride represented by an empirical formula of Sr1?x?yBaxEuyAlSi4N7. A composition ratio (x) of barium (Ba) satisfies 0<x?0.3 and a composition ratio (y) of europium (Eu) satisfies 0<y?0.1.

Abstract: A light source may include an LED chip having a light-emitting surface, on which a luminophore layer is arranged. The luminophore layer may include adjacently arranged regions having different luminophores. A lighting device may include at least one light source.

Abstract: A light-emitting element disclosed in the present invention includes a light-emitting layer and a first layer between a first electrode and a second electrode, in which the first layer is provided between the light-emitting layer and the first electrode. The present invention is characterized by the device structure in which the first layer comprising a hole-transporting material is doped with a hole-blocking material or an organic compound having a large dipole moment. This structure allows the formation of a high performance light-emitting element with high luminous efficiency and long lifetime. The device structure of the present invention facilitates the control of the rate of the carrier transport, and thus, leads to the formation of a light-emitting element with a well-controlled carrier balance, which contributes to the excellent characteristics of the light-emitting element of the present invention.

Abstract: Certain example embodiments relate to organic light emitting diode (OLED) inclusive devices, and/or methods of making the same. A substrate supports a transparent conductive coating (TCC) based layer, and first and second organic layers disposed thereon. A reflective conductive layer is supported by the organic layers. An out-coupling layer stack (OCLS) interposed between the organic layers and a viewer of the device includes a hybrid organic-inorganic polymer matrix having scatterers dispersed throughout in a manner such that each scatterer is located in the far field of its nearest neighbor. The scatterers are dispersed to have a high Zeta potential, and promote Mie-like scattering of light passing through the OCLS. Mie-like scattering caused by the OCLS may help to frustrate the wave-guiding modes in the glass, e.g., by breaking down the in-phase coherence.

Abstract: An organic light-emitting device including: a substrate; a transparent cathode on the substrate; an anode disposed opposite to the cathode; an emission layer between the cathode and the anode; and a first electron transport layer between the cathode and the emission layer and including an imidazole derivative.

Abstract: A red-emitting phosphor comprises a nitride-based composition represented by the chemical formula M(x/v)M?2Si5-xAlxN8:RE, wherein: M is at least one monovalent, divalent or trivalent metal with valence v; M? is at least one of Mg, Ca, Sr, Ba, and Zn; and RE is at least one of Eu, Ce, Tb, Pr, and Mn; wherein x satisfies 0.1?x<0.4, and wherein the phosphor has the general crystalline structure M?2Si5N8:RE, Al substitutes for Si within the crystalline structure, and M is located substantially at interstitial sites. Furthermore, the phosphor is configured such that 1,000 hours of aging at 85° C. and 85% humidity results in a deviation in chromaticity coordinates CIE ?x and ?y of less than about 0.03. Furthermore, the phosphor absorbs radiation in the UV and blue and emits light with a photoluminescence peak wavelength within the range from about 620 to 650 nm.

Abstract: In accordance with certain embodiments, semiconductor dies are embedded within polymeric binder to form, e.g., freestanding white light-emitting dies and/or composite wafers containing multiple light-emitting dies embedded in a single volume of binder.

Abstract: An optical device includes a light source with at least two radiation sources, and at least two layers of wavelength-modifying materials excited by the radiation sources that emit radiation in at least two predetermined wavelengths. Embodiments include a first plurality of n radiation sources configured to emit radiation at a first wavelength. The first plurality of radiation sources are in proximity to a second plurality of m of radiation sources configured to emit radiation at a second wavelength, the second wavelength being shorter than the first wavelength. The ratio between m and n is predetermined. The disclosed optical device also comprises at least two wavelength converting layers such that a first wavelength converting layer is configured to absorb a portion of radiation emitted by the second radiation sources, and a second wavelength converting layer configured to absorb a portion of radiation emitted by the second radiation sources.

Abstract: The present invention relates to certain metal silicate halide (halosilicate) phosphors, the phosphors with an oxide coating, methods of making the phosphors, and light emitting diode- (LED-) based lighting devices modified with the phosphors.

Abstract: Provided according to embodiments of the invention are phosphor compositions that include Ca1-x-ySrxEuyAlSiN3, wherein x is in a range of 0.50 to 0.99 and y is less than 0.013. Also provided according to embodiments of the invention are phosphor compositions that include Ca1-x-ySrxEuyAlSiN3, wherein x is in a range of 0.70 to 0.99 and y is in a range of 0.001 and 0.025. Also provided are methods of making phosphors and light emitting devices that include a phosphor composition according to an embodiment of the invention.

Abstract: A white light emitting device includes a light emitting element having a peak wavelength at from 430 nm to 460 nm; and a fluorescent layer on the light emitting element containing a red fluorescent material and a green-yellow fluorescent material. The white light emitting device achieves high color rendering properties, a high average color rendering index Ra and a high luminescent efficiency, or a high white efficiency.

Abstract: A semiconductor nanocrystal capable of emitting blue light upon excitation. Also disclosed are devices, populations of semiconductor nanocrystals, and compositions including a semiconductor nanocrystal capable of emitting blue light upon excitation. In one embodiment, a semiconductor nanocrystal capable of emitting blue light including a maximum peak emission at a wavelength not greater than about 470 nm with a photoluminescence quantum efficiency greater than about 65% upon excitation. In another embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting blue light with a photoluminescence quantum efficiency greater than about 65% upon excitation.

Abstract: The invention relates to compounds of the general formula (I) EA2-xEuxSiO4.aM2B4O7 (I) where EA stands for two or more elements selected from Ca, Sr, Zn and Ba, M stands for Li, Na or K, and a stands for a value from the range 0.01?a?0.08, and x stands for a value from the range 0.01?x?0.25.

Abstract: An embodiment of the present invention discloses a light-emitting device including a first light source, a second light source, and an optical element. The first light source is configured to emit a first light at a first low temperature and a first high temperature, and has a first hot/cold factor. The second light source is configured to emit a second light at the first low temperature and the first high temperature, and has a second hot/cold factor. The optical element is configured to generate a third light by the excitation of the first light, and reach a second high temperature higher than the first high temperature under the irradiation of the first light.

Abstract: Write in of lower significant bits of a digital video signal to a memory is eliminated by a memory controller of a signal control circuit in a display device during a second display mode in which the number of gray scales is reduced, as compared to a first display mode. Further, read out of the lower significant bits of the digital video signal from the memory is also eliminated. The amount of information of digital image signals input to a source signal line driver circuit is reduced. Corresponding to this operation, a display controller functions to make start pulses and clock pulses input to each driver circuit have a lower frequency, and write in periods and display periods of sub-frame periods participating in display are set longer.

Abstract: A ceramic composite material for light conversion, which is a solidified body comprising two or more matrix phases with respective components being two or more oxides selected from the group consisting of metal oxides and complex oxides each produced from two or more metal oxides, wherein at least one of the matrix phases is a phosphor phase containing an activated oxide. The solidified body is preferably obtained by the unidirectional solidification method. The ceramic composite material for light conversion is excellent in brightness, light-mixing property, heat resistance and ultraviolet light resistance.