Abstract: An anode substrate constituted of a conductive film forming substrate and a reinforcing substrate having different thermal expansion coefficient and being bonded together by the arrangement of adhesive layers is disclosed. The substrate can prevent creation of cracks on the conductive film forming substrate when heating and cooling the anode substrate. The adhesive layers are arranged at an interval, each of the adhesive layers being formed into a shape selected from a group consisting of a rectangular strip shape and a curved strip shape. The adhesive layers are arranged in a pattern to be symmetry with respect to a center line of the arrangement of the adhesive layers extending perpendicular to a line connecting both longitudinal ends of the arrangement of the adhesive layer. Furthermore, the adhesive layers include an outer adhesive portion located outward among remaining adhesive layers, and the outer adhesive layers are arranged shorter than the remaining adhesive layers.

Abstract: The present invention relates to a photocathode having a structure to dramatically improve the effective quantum efficiency in comparison with that of a conventional art, an photomultiplier and an electron tube. The photocathode comprises a supporting substrate transmitting or blocking an incident light, a photoelectron emitting layer containing an alkali metal provided on the supporting substrate, and an underlayer provided between the supporting substrate and the photoelectron emitting layer. Particularly, the underlayer contains a beryllium oxide, and is adjusted in its thickness such that a thickness ratio of the underlayer to the photoelectron emitting layer falls within a specific range. This structure allows to obtain a photocathode having a dramatically improved quantum efficiency.

Abstract: The photomultiplier tube 1 is provided with an upper frame 2 and a lower frame 4 which are arranged so as to oppose each other, with the respective opposing surfaces 20a, 40a made with an insulating material, a side wall part 3 which constitutes a casing together with the frames 2, 4, a plurality of stages of electron multiplying parts 33 which are arrayed so as to be spaced away sequentially from a first end side to a second end side on the opposing surface 40a of the lower frame 4, a photocathode 41 which is installed on the first end side so as to be spaced away from the electron multiplying parts 33, converting incident light from outside to photoelectrons, an anode part 34 which is installed on the second end side so as to be spaced away from the electron multiplying parts 33 to take out electrons multiplied by the electron multiplying parts 33 as a signal, and a wall-like electrode 32 which is arranged so as to enclose the photocathode 41 when viewed from a direction directly opposite to an opposing sur

Abstract: A photomultiplier tube including a photocathode, an electron multiplier, an electron collector, and a power lead, wherein the photocathode and the electron multiplier are disposed in a sealed transparent vacuum envelope, the electron collector and the power lead are connected with an external circuit outside the vacuum envelope, the photocathode is formed on the entire inner surface of the vacuum envelope, and the electron multiplier is located on the internal center of the vacuum envelope to receive photoelectrons from the photocathode in all directions for electrons multiplication. Because the effective photocathode area is increased, the detection efficiency of unit light-receiving area is improved.

Abstract: An electron tube of the present invention includes: a vacuum vessel including a face plate portion and a stem portion arranged facing the face plate portion; a photocathode arranged in the vacuum vessel and formed on the face plate portion; a projection portion arranged in the vacuum vessel, extending from the stem portion toward the face plate portion, and made of an insulating material; an electron detector arranged on the projection portion, made of a semiconductor, and having a first conductivity-type region and a second conductivity-type region; and a first conductive film covering a surface of the projection portion and to be electrically connected to the first conductivity-type region.

Abstract: An electron tube of the present invention includes: a vacuum vessel including a side tube portion made of glass and a plate-like member blocking one opening of the side tube portion and made of glass; a first metal film provided on an end face of the side tube portion; a second metal film arranged facing the first metal film and provided on a marginal part of a face at a vacuum side of the plate-like member; a third metal film provided on at least one of an outer wall face of the side tube portion adjacent to the end face and a side face of the plate-like member adjacent to the marginal part; and a metal member made of a low-melting-point metal, for sealing a gap between the side tube portion and the plate-like member while contacting the first metal film, the second metal film, and the third metal film.

Abstract: A photocathode for an image intensifier tube includes a faceplate, a glass plate disposed opposite the faceplate, and a span having one end attached to the glass plate and the other end attached to the faceplate for forming a sealed chamber between the faceplate and the glass plate. A semiconductor layer is bonded to a surface of the glass plate, where the surface is disposed outside of the sealed chamber. The semiconductor layer forms a photocathode. A thermal electric cooler (TEC) is disposed inside the sealed chamber for cooling the photocathode. The faceplate is formed from sapphire material. The glass plate is formed from high conductivity glass. The span is formed from either high conductivity glass or low conductivity glass. The faceplate and the glass plate form a path for light to impinge upon the semiconductor layer, and the photocathode of the semiconductor layer is configured to convert the light into electrons for emission toward an electron gain device.

Abstract: An object is to sufficiently keep the airtightness in a vacuum container even when it is made smaller. A photomultiplier tube 1 comprises a flat sheet-like lower substrate 4, a casing-like frame 3b erected on the lower substrate 4, an upper substrate 2 including a frame 3a airtightly joined to an opening part of the frame 3b while holding a low-melting metal therebetween, and a frame-like projection 25b arranged in parallel with the frame 3b on the inner side of the frame 3b on the lower substrate 4.

Abstract: In the photocathode, an underlayer made of a crystalline material containing La2O3 is provided between a supporting substrate and a photoelectron emission layer, and is in contact with the photoelectron emission layer. Therefore, for example, at the time of heat treatment in a manufacturing process of the photocathode, dispersion to the supporting substrate side of an alkali metal contained in the photoelectron emission layer is suppressed. Further, it is assumed that this underlayer functions so as to reverse the direction of, out of photoelectrons e— generated within the photoelectron emission layer, photoelectrons traveling toward the supporting substrate side to the side opposite thereto.

Abstract: A multifunction module for an electron beam column comprises upper and lower electrodes, and a central ring electrode. The upper and lower electrodes have multipoles and are capable of deflecting, or correcting an aberration of, an electron beam passing through the electrodes. A voltage can be applied to the central ring electrode independently of the voltages applied to the upper and lower electrodes to focus the electron beam on a substrate.

Abstract: A photomultiplier tube 1 is an electron tube comprising an envelope 5 including a frame 3b having at least one end part formed with an opening and an upper substrate 2 airtightly joined to the opening, and a photocathode 6 contained within the envelope 5, the photocathode 6 emitting a photoelectron into the envelope 5 in response to light incident thereon from the outside; wherein multilayer metal films 10b, 10a each constituted by a metal film made of titanium, a metal film made of platinum, and a metal film made of gold laminated in this order are formed at the opening and the joint part between the upper substrate 2 and opening; and wherein the frame 3b and upper side substrate 2 are joined to each other by holding a joint layer 14 containing indium between the respective multilayer metal films 10b, 10a.

Abstract: An electron tube of the present invention includes: a vacuum vessel including a face plate portion and a stem portion arranged facing the face plate portion; a photocathode arranged in the vacuum vessel and formed on the face plate portion; a projection portion arranged in the vacuum vessel, extending from the stem portion toward the face plate portion, and made of an insulating material; an electron detector arranged on the projection portion, made of a semiconductor, and having a first conductivity-type region and a second conductivity-type region; and a first conductive film covering a surface of the projection portion and to be electrically connected to the first conductivity-type region.

Abstract: An electron tube of the present invention includes: a vacuum vessel including a side tube portion made of glass and a plate-like member blocking one opening of the side tube portion and made of glass; a first metal film provided on an end face of the side tube portion; a second metal film arranged facing the first metal film and provided on a marginal part of a face at a vacuum side of the plate-like member; a third metal film provided on at least one of an outer wall face of the side tube portion adjacent to the end face and a side face of the plate-like member adjacent to the marginal part; and a metal member made of a low-melting-point metal, for sealing a gap between the side tube portion and the plate-like member while contacting the first metal film, the second metal film, and the third metal film.

Abstract: The present invention relates to a photocathode having a structure to dramatically improve the effective quantum efficiency in comparison with that of a conventional art, an photomultiplier and an electron tube. The photocathode comprises a supporting substrate transmitting or blocking an incident light, a photoelectron emitting layer containing an alkali metal provided on the supporting substrate, and an underlayer provided between the supporting substrate and the photoelectron emitting layer. Particularly, the underlayer contains a beryllium oxide, and is adjusted in its thickness such that a thickness ratio of the underlayer to the photoelectron emitting layer falls within a specific range. This structure allows to obtain a photocathode having a dramatically improved quantum efficiency.

Abstract: An envelope has a glass bulb body and a cylindrical glass bulb base. The glass bulb body includes an upper hemisphere and a lower hemisphere. The upper hemisphere is curved in a substantially spherical shape. The lower hemisphere is substantially curved in a spherical shape and connects the upper hemisphere and glass bulb base. A photocathode is formed on the inner surface of the glass bulb body. An avalanche photodiode is disposed on the glass bulb body side relative to an intersection between an imaginary extended curved surface of the lower hemisphere within the glass bulb base and an axis. When light enters the photocathode, electrons are emitted from the photocathode. The electrons are converged at the position above and in the vicinity of the APD by an electrical field in the electron tube, so that the electrons enter the APD in an efficient manner and are detected satisfactorily.

Abstract: A photocathode apparatus is constructed by a transparent body adapted to receive incident light, and a metal cover layer formed on a surface of the transparent body. The incident light reaches an incident/reflective surface of the metal cover layer through the surface of the transparent body to excite surface plasmon resonance light in the incident/reflective surface of the metal cover layer, thus emitting photoelectrons from a photoelectric surface of the metal cover layer opposite to the incident/reflective surface thereof by the photoelectric effect of one of the surface plasmon resonance photons and its second harmonic generation wave.

Abstract: A photocathode, for generating electrons in response to incident photons in a photodetector, includes a base layer having a first lattice structure and an active layer having a second lattice structure and epitaxially formed on the base layer, the first and second lattice structures being sufficiently different to create a strain in the active layer with a corresponding piezoelectrically induced polarization field in the active layer, the active layer having a band gap energy corresponding to a desired photon energy.

Abstract: A method and an electron source are provided for generating polarized electrons for an electron microscope. The electron source includes a photoemissive cathode and a low-power drive laser. The geometry of the photoemissive cathode uses a generally planar emission surface, which is imaged to approximately 1/100 its initial size via electrostatic focusing elements. The virtual emitter, or image spot, then is used as an electron source by a conventional microscope column.

Abstract: A photocathode is formed on a predetermined portion of the internal surface of an envelope of an electric tube. An avalanche photodiode (APD) is provided inside the envelope. The APD is surrounded by a cover and a tubular inner wall. A manganese bead and an antimony bead serving as evaporation sources are disposed in the vicinity outside the inner wall. The manganese bead and the antimony bead are surrounded by a tubular outer wall. The manganese bead and the antimony bead generate metal vapor to thereby form the photocathode. In forming the photocathode, the cover, inner wall, outer wall prevent the metal vapor from being deposited on the APD or an unintended portion inside the electron tube.

Abstract: An electron beam column comprises a thermal field emission electron source to generate an electron beam, an electron beam blanker, a beam shaping module, and electron beam optics comprising a plurality of electron beam lenses. In one version, the optical parameters of the electron beam blanker, beam shaping module, and electron beam optics are set to achieve an acceptance semi-angle ? of from about ¼ to about 3 mrads, where the acceptance semi-angle ? is half the angle subtended by the electron beam at the writing plane. The beam-shaping module can also operate as a single lens using upper and lower projection lenses. A multifunction module for an electron beam column is also described.

Abstract: Provided are a photocathode plate capable of stably achieving a high sensitive property, and an electron tube using such a photocathode plate. In a photomultiplier tube 1, an insulating layer 63 is formed between a semiconductor electron emission layer 51 in a photocathode plate 23A, and a first electrode 65 electrically connected to an electron releasing portion 59. This insulating layer 63 permits the photocathode plate 23A to be cleaned by heat cleaning at a high temperature, in a stage before formation of an active layer 61 on an exposed region of the semiconductor electron emission layer 51 in the electron releasing portion 59. This makes it feasible to effectively clean the exposed region of the semiconductor electron emission layer 51 in the electron releasing portion 59 and to stabilize the physical properties of the exposed region. In consequence, a higher sensitive property can be stably achieved in the photocathode plate 23A and in the photomultiplier tube 1 using the photocathode plate 23A.

Abstract: An electron beam lithography system has an electron gun including at least one laser that is operable in a first mode to generate electrons for lithography. The electron beam lithography system is operable in a second mode to regenerate the photocathode of the electron gun by application of the laser. The photocathode includes a layer of cesium telluride.

Abstract: An image intensifier tube comprising a housing which holds a photocathode and a screen, wherein a microchannel plate is supported in a recess in an interior surface of an annular collar which is also held in the housing.

Abstract: In the polycrystal diamond thin film in accordance with the present invention, the average particle size is at least 1.5 ?m and, in a Raman spectrum obtained by Raman spectroscopy, a peak intensity near a wave number of 1580 cm?1 has a ratio of 0.2 or less with respect to a peak intensity near a wave number of 1335 cm?1. The photocathode and electron tube in accordance with the present invention comprise the polycrystal diamond thin film as a light-absorbing layer.

Abstract: A faceplate (F) for an image intensifier tube (10) for reducing veiling glare begins as a blank (36) of optical material of a desired glass composition having a shape that conforms substantially to a configuration of the faceplate (F) to be produced. An extraneous removable aperture step portion (54) is formed on the glass blank (36). The glass blank is blackened (41) and the aperture step portion (54) is removed creating a desired transmissive aperture (34) through the glass blank (36).

Abstract: A light intensifier tube is described and which includes a photocathode; a luminescent screen disposed in spaced relation relative the photocathode; a shutter electrode disposed intermediate the photocathode and the luminescent screen; and an anode located intermediate the shutter electrode and the luminescent screen is provided.

Abstract: A semiconductor source of emission electrons which uses a target of a wide bandgap semiconductor having a target thickness measured from an illumination surface to an emission surface. The semiconductor source is equipped with an arrangement for producing and directing a beam of seed electrons at the illumination surface and a mechanism for controlling the energy of the seed electrons such that the energy of the seed electrons is sufficient to generate electron-hole pairs in the target. A fraction of these electron-hole pairs supply the emission electrons. Furthermore, the target thickness and the energy of the seed electrons are optimized such that the emission electrons at the emission surface are substantially thermalized. The emission of electrons is further facilitated by generating negative electron affinity at the emission surface. The source of the invention can take advantage of diamond, AlN, BN, Ga1-yAlyN and (AlN)x(SiC)1-x, wherein 0?y?1 and 0.2?x?1 and other wide bandgap semiconductors.

Abstract: An image intensifier includes a photocathode (11) with a face plate (22). A conductive layer (24) is disposed outwardly from the face plate (22). A grounded conductor (16) is electrically coupled to the conductive layer (24) and grounds the conductive layer (24).

Abstract: A photocathode and an electron tube in which the photocathode plate can be securely fixed without using any adhesive. Even under the severe condition that a high vibration resistance is required or thermal stress occurs because of great temperature variation, it can be used widely for an image intensifier, a streak tube, or a photomultiplier. The photocathode plate of the photocathode is sandwiched between a faceplate and a support plate. First pins embedded in the faceplate are joined to the support plate. Therefore, the photocathode plate can be readily fixed securely to the faceplate without using any adhesive.

Abstract: A photomultiplier tube has a side tube with a stem plate fixed on one end and a faceplate fixed on the other. The side tube is formed of metal, and at least the portion of the stem plate contacting the metal side tube is formed of metal. The side tube and stem plate are fused together by laser welding or electron beam welding to form an airtight vessel, such that the outer edge of the stem plate does not protrude further externally than the outer surface of the side tube.

Abstract: A image intensifier tube (14) includes a housing (18) carrying a photocathode (22) and a microchannel plate (24). The housing also receives axially extending fine-dimension spacing structure (22a) interposed around an active area 22b of the photocathode and the microchannel plate to establish and maintain a selected fine-dimension, precise PC-to-MCP spacing between these structures. The housing includes yieldable deformable electrical contact structure (56′) for establishing and maintaining contact with the microchannel plate, and yieldable deformable sealing structure (58) allowing axial movement of the photocathode relative to the housing structure as the tube is assembled and the axial spacing structure controls PC-to-MCP spacing. The result is that the PC-to-MCP spacing dimension of the tube is largely isolated from dimensional variabilities of the housing and is established and maintained precisely during manufacturing of the tube despite stack up of tolerances for the housing and its components.

Abstract: A photocathode structure having a photoelectric face plate protective layer, in order to prevent a photoelectric effect from being deteriorated sharply due to a high reaction of oxygen with respect to most of existing photoelectric face plate materials when the photoelectric face plate used for generating photoelectrons by a photoelectric effect is exposed to the atmosphere, is provided. For example, a diamond-like carbon thin layer is used as a photocathode protective layer, to thereby perform a function of protection of the photoelectric face plate through isolation of the photoelectric face plate from the atmosphere and enable electrons generated from the photoelectric face plate to pass through a diamond-like carbon thin layer, which is deposited thinly, by the tunneling effect so that the performance of the photocathode is not affected.

Abstract: A diamond transmission dynode and photocathode are described which include a thin layer of a crystalline semiconductive material. The semiconductive material is preferably textured with a (100) orientation. Metallic electrodes are formed on the input and output surfaces of the semiconductive material so that a bias potential can be applied to enhance electron transport through the semiconductive material. An imaging device and a photomultiplier utilizing the aforesaid transmission dynode and/or photocathode are also described.

Abstract: An image intensifier tube comprising a housing which holds a photocathode and a screen, wherein a microchannel plate is supported in a recess in an interior surface of an annular collar which is also held in the housing.

Abstract: A method of manufacturing a photocathode includes forming a seed layer with a single crystal structure on a faceplate; forming a window layer over the seed layer; and forming an active layer over the window layer. The method can also include the step of cleaning the faceplate before the seed layer is formed. The steps of cleaning the faceplate, forming the seed layer, forming the window layer and forming the active layer are performed in an organometallic chemical vapor deposition reactor system. The seed layer is formed by depositing a buffer layer on the faceplate and annealing the buffer layer to form the seed layer having. The atmosphere during the annealing of the buffer layer includes hydrogen, arsine, trimethylaluminum, and trimethylgallium. A photocathode formed from the method is also disclosed.

Abstract: In an electron tube 1, a space S between a periphery part 15b of a semiconductor device 15 and a stem 11 is filled with an insulating resin 20. The insulating resin 20 functions as a reinforcing member while the electron tube 1 is assembled under high-temperature condition, thereby preventing a bump 16 from coming off a bump connection portion 19. Since the space S is only partly closed by the resin 20, the space between the semiconductor device 15 and the stem 11 is ensured a ventilability. That is, no air reservoir is formed between an electron incidence part 15a at the center of the semiconductor device 15 and the surface C of the stem 11, whereby air expanding at high temperature does not damage the electron incidence part 15a of the back-illuminated semiconductor device 15.

Abstract: An electron tube 10 mainly includes a sleeve 12, an input plate 14 having a photocathode surface 18, a stem 16 and a CCD 20. A vacuum is provided in an interior of the electron tube 10. The CCD 20 is fixed onto the stem such that a rear surface B faces the photocathode surface 18. In the CCD 20, on a single conductive type semiconductor substrate 64, a buried layer 66, a barrier region 68, a SiO2 layer 70, a storage electrode layer 72, a transmission electrode layer 74, and a barrier electrode layer 76 are formed at their predetermined positions. A PSG film 78 is formed at an entire front surface A over these layers to flatten the surface of the CCD 20. Further, SiN film 106 mainly composed of SiN is formed above the PSG film over the entire front surface A.

Abstract: A photocathode having a UV glass substrate and a laminate composed of a SiO2 layer, a GaAlN layer, a Group III-V nitride semiconductor layer and an AlN buffer layer provided on the UV glass substrate in succession. The UV glass substrate, which absorbs infrared rays, can be heat treated at a high speed by photoheating. Further, the UV glass substrate, which is transparent to ultraviolet rays, permits ultraviolet rays to be introduced into the Group III-V nitride semiconductor layer where photoelectric conversion occurs.

Abstract: A photodetecting device is characterized by comprising a photodetecting section having a photoelectric surface for emitting photoelectrons upon incidence of light, a semiconductor detection element having an electron incident surface on which the photoelectrons can be incident, and a vacuum vessel in which the photoelectric surface is arranged on one inner surface, and the semiconductor detection element is arranged on the other inner surface opposing the one surface, and cooling means for cooling a structure on the semiconductor detection element side of the vacuum vessel.

Abstract: This photocathode comprises: InP substrate 1; InAsx2P1−x2(0<x2<1) buffer layer 2; Inx1Ga1−x1As (1>x1>0.53) light-absorbing layer 3; InAsx3P1−x3 (0<x3<1) electron-emitting layer 4; InAsx3P1−x3 contact layer 5 formed on the electron-emitting layer 4; active layer 8 of an alkali metal or its oxide or fluoride formed on the exposed surface of electron-emitting layer 4; and electrodes 6 and 7.

Abstract: This invention discloses a thin-film-coated photocathode, including a photocathode formed of first material consisting of potassium cesiuin antimonide and a thin-film coating of a second material consisting of cesium bromide (CsBr).

Abstract: A housing for microelectronic devices requiring an internal vacuum for operation, e.g., an image detector, is formed by tape casting and incorporates leads between interior and exterior of said housing where said leads are disposed on a facing surface of green tape layers. Adjacent green tape layers having corresponding apertures therein are stacked on a first closure member to form a resulting cavity and increased electrical isolation or channel sub-structures are achievable by forming adjacent layers with aperture dimension which vary non-monotonically. After assembly of the device within the cavity, a second closure member is sealed against an open face of the package in a vacuum environment to produce a vacuum sealed device.

Abstract: A image intensifier tube (14) includes a housing (18) carrying a photocathode (22) and a microchannel plate (24). The housing also receives axially extending fine-dimension spacing structure (22a) interposed around an active area 22b of the photocathode and the microchannel plate to establish and maintain a selected fine-dimension, precise PC-to-MCP spacing between these structures. The housing includes yieldable deformable electrical contact structure (56′) for establishing and maintaining contact with the microchannel plate, and yieldable deformable sealing structure (58) allowing axial movement of the photocathode relative to the housing structure as the tube is assembled and the axial spacing structure controls PC-to-MCP spacing. The result is that the PC-to-MCP spacing dimension of the tube is largely isolated from dimensional variabilities of the housing and is established and maintained precisely during manufacturing of the tube despite stack up of tolerances for the housing and its components.

Abstract: A photocathode having a gate electrode so that modulation of the resulting electron beam is accomplished independently of the laser beam. The photocathode includes a transparent substrate, a photoemitter, and an electrically separate gate electrode surrounding an emission region of the photoemitter. The electron beam emission from the emission region is modulated by voltages supplied to the gate electrode. In addition, the gate electrode may have multiple segments that are capable of shaping the electron beam in response to voltages supplied individually to each of the multiple segments.

Abstract: A vacuum diode with a high saturation current density and a rapid response time for the detection of electromagnetic radiation. This diode comprises a grid (6) in the shape of a cylinder and a photo-cathode (4) which extends along the axis (X) of the cylinder. The photo-cathode includes a part of the internal conductor of a coaxial cable (8), the external conductor and the electrically insulating material of the coaxial cable being removed opposite this part, and the grid is electrically connected to the external conductor of this coaxial cable, the internal and external conductors being coaxial. Application to the detection of visible, infra-red, ultra-violet and X radiation.

Abstract: The present invention relates to an electron tube comprising, at least, a cathode electrode, a face plate having a photocathode, and an electron entrance surface provided at a position where the electron emitted from the photocathode reaches. The object of the present invention is to provide an electron tube which can reduce its size and has a structure for improving the workability in its assembling process. In particular, the electron tube according to the present invention has a bonding ring, provided between the face plate and the cathode electrode, for bonding the face plate and the cathode electrode together. The bonding ring is made of a metal material selected from the group consisting of In, Au, Pb, alloys containing In, and alloys containing Pb.

Abstract: An ultraviolet detector comprises a metal tubular member which hermetically encloses an anode and a cathode therein and is filled with a discharged gas introduced therein from a metal exhaust tube. After the anode and the cathode are enclosed within the tubular member, the ultraviolet detector can be made without being subjected to any glass fusing process. Accordingly, the inside of the sealed vessel V1 can be prevented from being contaminated with fluorine, whereby the ultraviolet detector with stable characteristics can be provided.

Abstract: An improved image intensifier tube has electrically operative components that include a photocathode having a photoemissive layer, a microchannel plate (MCP) having a conductive input surface and a conductive output surface, and a vacuum housing for retaining the photocathode, microchannel plate and a fiber optic inverter and screen within an evacuated environment. The fiber optic inverter has a circumferentially extending flange portion extending toward the housing to accommodate a sealing material which sealingly engages an inner surface of an output flange with the inverter flange portion to form an air impervious vacuum seal and where the output flange is supported by the fiber optic inverter flange portion. The improved intensifier includes a photocathode having a flat faceplate conductively engaging the photocathode along the entire surface of the faceplate.

Abstract: To provide an electron tube having good airtightness and being appropriate for mass production, indium affixed to the inner surface of a sealing metal support member is provided between a side tube and input faceplate. The input faceplate is pushed against the side tube. As a result, the indium is squeezed by a pressure receiving surface provided on the end face of the side tube. Since the pressure receiving surface is in a generally declining shape from the inside out, the force of the pressing surface causes the indium to flow outward toward the sealing metal support member. Therefore, the indium is firmly affixed to the pressure receiving surface, and the side tube and input faceplate can be reliably sealed by the indium.

Abstract: An ultraviolet detector comprises a metal tubular member which hermetically encloses an anode and a cathode therein and is filled with a discharged gas introduced therein from a metal exhaust tube. After the anode and the cathode are enclosed within the tubular member, the ultraviolet detector can be made without being subjected to any glass fusing process. Accordingly, the inside of the sealed vessel V1 can be prevented from being contaminated with fluorine, whereby the ultraviolet detector with stable characteristics can be provided.