Abstract: In a circuit arrangement for providing a current having a controllable temperature coefficient of current, a diffused resistor (334) is used to set up a reference current in a current source (40) which has a temperature coefficient dependent upon the diffused resistor. A current mirror (352, 354, 356) receives the reference current and passes a portion of it through an ion implanted resistor (360). The output current has a temperature coefficient which is a function of the original temperature coefficient of current and a nonzero algebraic multiple of the temperature coefficient of the implanted resistor. By appropriate selection of the resistor values and types, the temperature coefficient of the output current can be set to any desired value.

Abstract: A curvature correction circuit for generating an output current of the general form T ln T. When applied as a curvature correction circuit to bandgap references, the circuit precisely offsets the inherent parabolic non-linearity of such circuits.

Abstract: A constant-current generating circuit for supplying a constant current independently of any variations in the source voltage, and further having the true thermal characteristic of the base-emitter voltage of a transistor is constituted in such a manner that the base-emitter voltage of a first transistor is precisely converted into a current, and this current is used as a current source. Another constant-current generating circuit operable at a relatively low source voltage, and capable of minimizing a possible error in supplying a current to the load even when the d.c.

Abstract: Current source circuitry consisting of a first n-channel field effect transistor (FET) and voltage generator circuitry coupled to the gate of the first FET. The voltage generator circuitry acts to control the current through the first FET such that it is essentially constant even with power supply, temperature, and many processing variations. The voltage generator circuitry consists of a second FET, a two input differential operational amplifier, a resistor, and an n-p-n transistor if the resistor has a positive temperature coefficient. A negative feedback path using the amplifier and the second FET ensures against current changes in the first and second FETs even if there are changes in one of the power supply levels and/or many semiconductor processing variations.

Abstract: A current switch whose turn-on and turn-off voltages are independent of temperature includes a transistor switch circuit having two input transistors to which a differential voltage is applied, two sensing transistors for sensing turn-on and turn-off voltages respectively, and an output transistor controlled by the sensing transistors. A differential voltage sensing circuit including a differential transistor pair is connected to receive the differential voltage at the inputs of the transistors and to deliver the differential voltage to the transistor switch circuit. A biasing current source is provided to supply biasing currents which vary as a function of temperature to the input and sensing transistors of the switch circuit, and a biasing current source is provided to supply a biasing current which varies as a function of temperature squared to the differential transistor pair.

Abstract: Gain of a photosensitive avalanche member, such as an avalanche photodiode, is stabilized so that a variation in gain of the photosensitive member in terms of temperature is compensated for by applying to the photosensitive member a bias voltage varying with temperature according to a predetermined relationship. The relationship depends on the variation with temperature in the voltage applied to terminals of at least one diode. The gain stabilizing device comprises a temperature-stabilized voltage source, a dc-dc voltage converter having an adjustable gain for applying a bias voltage to the photosensitive member, and at least one diode series-connected between the supply source and an input of the converter.

Abstract: A CMOS precision current source which is insensitive to changes in both ambient temperature and processing conditions. In particular, a CMOS circuit exhibits both a temperature dependent voltage (V(T)) and a temperature dependent on-chip resistance (R(T)) where the dependencies of both voltage and resistance are linear functions of temperature of the form y=mx+b. The ratio of the slopes (m.sub.V /m.sub.R) is constructed to be equal to the ratio of the y-intercepts (b.sub.v /b.sub.R), where this ratio is a constant value, denoted s. Therefore, since a constant output current I.sub.o is equal to V(T)/R(T), I.sub.o will be equal to the constant value s. Additionally, a constant reference voltage (V.sub.o) may also be provided with a minimal increase in the circuitry needed to provide the constant current.

Abstract: A control transistor (3) is connected between a power supply terminal (1) and an output terminal (19). The base bias of the control transistor (3) is controlled by bias control transistors (12, 13), thereby the output voltage is maintained at a constant value. An overcurrent state is detected by a current control detecting transistor (22), and the base bias of the control transistor (3) is controlled by the bias control transistors (12, 13), so as to prevent the overcurrent. The current control detecting transistor (22) further detects the time when the potential of the output terminal (19) becomes approximately 0 V by, e.g., short-circuiting of a load, so as to control the base bias of the control transistor (3) through the bias control transistors (12, 13), thereby the current to the load is decreased to a value considerably smaller than a limited value for preventing the overcurrent.

Abstract: A temperature-stabilized voltage is generated based on the positive temperature coefficient difference in the base-to-emitter voltages of a pair of transistors operating at different current densities and a negative temperature coefficient voltage developed from the base-to-emitter voltage of a transistor.

Abstract: A CMOS integrated circuit for providing a temperature stabilized reference voltage includes a pair of common collector transistors operated to produce a voltage having one component based on the positive temperature coefficient difference in the base-emitter junction voltages of the transistors and a second component based on the negative temperature coefficient voltage developed from the base-emitter junction voltage of one of the transistors.

Abstract: A CMOS bandgap voltage reference which is temperature stable is disclosed. The large temperature-dependent p-tub resistors of prior art arrangements are replaced with relatively small, temperature stable p+ diffusion resistors. The increase in current level needed to compensate for the decrease in resistor value is provided by a simple cascode MOS circuit located between the ratioing resistors and the VSS potential.

Abstract: The present invention relates to a circuit capable of providing a negative temperature coefficient greater than that provided by discrete silicon integrated circuit components. A constant current source and a resistor divider network are added to a bipolar junction transistor, where the resistors and the constant current source function to increase the negative temperature coefficient of a bipolar junction transistor. The negative temperature compensation circuit formed in accordance with the present invention provides a sufficient negative temperature coefficient to offset the large positive temperature coefficient associated with high voltage avalanche breakdown diodes without requiring a high voltage integrated circuit.

Abstract: A resistor (R3) reduces voltage between an input voltage and the emitter terminal of a series pass transistor pair (Q1, Q2). An operational amplifier (U1) compares this reduced voltage with a reference voltage that is less than, but varies with, the input voltage. The emitter voltage decreases until the current reaches a design limit. Then, a resistor senses the output voltage and pulls the operational amplifier's input voltage down. This action causes the base current of the transistor pair (Q1, Q2) to decrease and the output current to foldback.

Abstract: A transconductance amplifier includes a differential amplifier, whose collector load is a current mirror having a current output. A current-source transistor arranged in the common emitter line supplies a current having a positive temperature-dependence. This current is obtained from a current-stabilizing circuit. By means of a voltage divider a fraction of a temperature-independent voltage is applied between the control electrodes of the differential amplifier, which voltage is taken from a voltage-stabilizing circuit. Depending on the value of this fraction, the output current is temperature-independent or has a negative temperature-dependence.

Abstract: The ladder network of a recirculation of remainder analog to digital converter has a voltage source that is regulated by a transistor and Zener diode together with feedback circuitry responsive to the regulated output voltage. Current through the circuit is controlled by feedback to establish equal and opposite temperature coefficients in the transistor and Zener diode of the regulator. The temperature stabilized voltage regulator produced thereby eliminates any requirement for trimmer potentiometers.

Abstract: The voltage regulator, entirely of monolithic integrated circuit construction, has an output voltage with a temperature gradient similar to that of the saturation and threshold voltages of liquid crystal elements. Constant current flows through temperature sensitive resistive elements in series with temperature insensitive resistance elements. The output voltage taken across at least a portion of the resistance elements has a voltage/temperature characteristic similar to that of the temperature sensitive elements. Both the level of the output voltage and the temperature gradient of the output voltage are independently controllable and independent of source voltage variations. Buffer circuits may be used between the output of the regulator and load, and sampling techniques are also used to conserve energy by duty cycle operation of higher current circuit elements.

Abstract: A precision voltage reference comprising an IC chip having a Zener diode connected to the input of an operational amplifier. Variations in output with temperature are minimized by selectively controlling the Zener current in accordance with temperature. The current is controlled by a resistive circuit including a thermistor connected in parallel with the Zener. A method of trimming the voltage reference is provided wherein an optimum quiescent operating current is determined based on voltage and current measurements at two different temperatures.

Abstract: A pressure transducer comprises a pressure sensor including a bridge connection of gauging resistors formed on a semiconductor substrate, and a power supply connected to the pressure sensor for driving it and basically acting as a constant current source. The power supply includes at least two transistors formed on the semiconductor substrate. One of the transistors provides a collector current which is less in temperature-dependency relative to that of the other transistor, and the other transistor has a collector circuit connected to the pressure sensor and provides a collector current corresponding to a sum of a substantially temperature-dependent current and a substantially temperature-independent current.

Abstract: A pressure transducer is disclosed comprising a pressure sensor portion having gage resistors in bridge formed on a thin diaphragm of a semiconductor substrate, and a power supply connected to the pressure sensor portion for driving the pressure sensor. The power supply includes a first current source for supplying a temperature-dependent current equivalent to the sum of a current almost proportional to the absolute temperature and a current independent of temperature, and a second current source for sinking the current almost proportional to the temperature characteristic of the gage resistors from the current of the first current source.

Abstract: An integrated-circuit analog-to-digital converter of the successive-approximation type formed on a single monolithic chip. The converter is made by a diffusion process wherein certain portions of the chip are formed with normal-mode linear transistors, and other portions are formed with inverted mode I.sup.2 L transistors. The normal-mode transistors provide a switchable current-source DAC, a set of three-state output buffers, and a comparator. The inverted mode transistors provide an internal clock and successive-approximation control circuitry for the DAC. The chip also includes a voltage reference to provide for absolute analog-to-digital conversions.

Abstract: A current stabilizing arrangement includes a first circuit having a series arrangement of a first resistor, a second resistor, and the collector-emitter path of a first transistor having its base connected to a point between the first and second resistors. A second circuit includes the collector-emitter path of a second transistor whose base is coupled to the collector of the first transistor. By providing a third resistor in the first circuit, in series with the first and second resistors and connected between the base of the second transistor and the collector of the first transistor, improved current stabilization with variations in supply voltage is obtained.

Abstract: A bandgap reference voltage generator includes compensation circuitry that renders the performance of the bandgap reference voltage generator independent of the static value of the supply voltage, V.sub.CC by providing a constant current through the self-regulating loop in the generator. The compensation circuitry effectively provides compensating terms for each V.sub.CC -dependent term in the network equation that describes the operation of the bandgap reference voltage generator. In a preferred embodiment, the compensating terms also serve to make the operation of the bandgap voltage generator independent of temperature.

Abstract: A temperature compensation method and circuit for a Hall element or other element with similar characteristics comprising a pair of current carrying branches, one of which includes a resistor. A pair of transistors in the branches are controlled in unison to control the sum of the currents in the branches in response to current through the element, and controlled differentially to control the relative magnitudes of the currents in the branches in response to the voltage generated by the element. A comparator circuit including an active load in the branches compares the branch currents and provides a switched output signal upon a predetermined relationship between the currents. Switching hysteresis is provided by changing the sum of the currents depending on the state of the output signal.

Abstract: A current source circuit is provided wherein the chip area consumption of a Miller multiplication capacitor is substantially reduced. A zero is created in addition to the pole created by the Miller multiplication capacitor. A first transistor is biased by a biasing means and has a base coupled to the emitter of a second transistor by a capacitor. The base of the second transistor is connected to the collector of the first transistor. A resistor is coupled between the emitter of the second transistor and ground.

Abstract: A temperature-compensating bias circuit for biasing a transistor circuit such as a multivibrator is disclosed. In the bias circuit, a series circuit formed of a first resistor and a parallel circuit consisting of a first circuit includes a second resistor and n diodes and a second circuit which includes a third resistor and m diodes, is connected between a power source line and a ground line. A voltage generated from a bias output terminal for driving the multivibrator has the effect of cancelling temperature drift of the multivibrator, and includes temperature drift represented by a temperature coefficient which varies according to the number of diodes in the first and second circuits.

Abstract: A monolithic integrated temperature compensated voltage reference circuit that includes a thermal source circuit for producing a current at an output thereof having a positive temperature coefficient and an output circuit coupled to the thermal source circuit which is responsive to this current for establishing an output voltage having a substantially zero temperature coefficient associated therewith.

Abstract: Bandgap circuit for generating a temperature-independent reference voltage, including a diode-resistance path at which a temperature-independent reference voltage corresponding to the energy gap of semiconductor material of components used in the circuit is available, the diode-resistance path including a diode and a series circuit of at least two resistors being connected in parallel with the diode, a temperature-independent reference voltage which is independent of the energy gap of the semiconductor material being available at one of the resistors.

Abstract: A reference voltage generator including a circuit for generating a reference voltage V.sub.REF having a non-linear voltage-temperature function, in which the improvement comprises an additional resistor being in circuit to make the function linear. By making the function linear, the equation defining V.sub.REF is easily differentiated to determine the change in voltage with temperature.

Abstract: Disclosed is a temperature compensation system for light measuring circuits. Said system compensates for the change, over temperature, of the output of the light measuring circuit by applying a bias source with a predetermined temperature coefficient. The system is designed so the bias voltage source is derived from the V.sub.BE (base to emitter voltage) difference between a pair of transistors, which difference is generated by the difference of current density at the junction of the pair of transistors obtained by flowing a pair of currents with a constant ratio independent of temperature.

Abstract: An improved bias generator provides a bias voltage output which is a function of an input current Iprog and provides a bias current to a preselected load which tracks the input signal independently of temperature. The amount the bias voltage output changes with temperature is determined by (1) V(T, Iprog), a voltage-current temperature dependent function of the base-emitter voltage drop of at least one transistor and (2) X, a scalar which is easily provided by setting the ratio of two resistors. The generator can therefore be easily constructed for particular circuit loads which include at least one semiconductive junction such that the biasing current through the load will be substantially independent of temperature.

Abstract: A reference voltage generating circuit comprises a circuit (20) for generating a current having a positive temperature coefficient, a circuit (30) for generating a current having a negative temperature coefficient and a circuit (Q7, Q13, R3) for synthesizing both currents and converting the synthesized current into a reference voltage. The circuit (20) for generating a current having a positive temperature coefficient converts a difference voltage between respective base-emitter voltages of two transistors (Q2, Q3) included therein, both bases of which are connected to each other, into a current through a resistor (R2), while a negative feedback is applied by utilizing a current mirror (Q9.about.Q13). The circuit (30) for generating a current having a negative temperature coefficient converts a voltage between a base and an emitter of a single transistor (Q1) into a current through a resistor (R1) while a negative feedback is applied by utilizing a current mirror (Q5.about.Q7).

Abstract: A current source circuit includes a first and a second transistor connected at the collector to a common load resistor. In the current source circuit, the emiiters of the first and second transistors are connected to a negative power source through different current restricting resistors. The base of the first transistor is biased by a series circuit including two diodes. The temperature coefficients of the collector currents of the first and second transistors are offset, so that the temperature-compensated current flows into the load resistor.

Abstract: A variable temperature coefficient level shifter includes a circuit which generates a voltage V.sub.BE having a negative temperature coefficient and a voltage .DELTA.V.sub.BE having a positive temperature coefficient. A control current is generated by placing a first resistor between V.sub.BE and ground and a second resistor between .DELTA.V.sub.BE and ground. Each of these currents forms a component of the control current which then has some net temperature coefficient. By properly scaling the resistors the control current may have any desired temperature coefficient between 2800 ppm and 3000 ppm. Once the temperature coefficient is set, a third resistor is provided through which the control current flows. The amplitude of the shift is then selected by selecting the value of resistor R.sub.S.

Abstract: A constant voltage generating circuit is designed so that the output thereof is temperature compensated. In particular, the device is provided with a first circuit containing p-n junctions (diodes, transistors etc.), the number of which is selected to compensate for any temperature dependance of a second, voltage level down or up circuit.

Abstract: In a known current source arrangement which generates a current whose temperature coefficient is only equal to zero at one specific temperature, steps are taken, in accordance with the invention, to render the generated current independent of the temperature over a wide temperature range by compensation of the disturbing factor in the relationship between the generated current and the temperature.

Abstract: A self-starting, negative voltage band gap regulator is provided, which includes a transconductance amplifier having first and second transistors and a resistive network, a current mirror circuit coupled to the amplifier and a negative feedback circuit connected from the collector of one of the transistors to the emitters of the transistors through said resistive network. First and second matched impedances, such as diodes, are included in the current mirror circuit and in the feedback circuit, respectively. The output voltage is taken from the feedback circuit.

Abstract: In a circuit producing an output voltage independent of temperature and comprising first and second pairs of interconnected transistors arranged in parallel circuit branches, the active transistor areas of the transistors within each pair are arranged to be different.

Abstract: An improved voltage reference circuit is provided comprising a series combination of a Kelvin-connected buried zener diode and a transistor. The collector of the transistor is connected to the first anode of the diode while the base of the transistor is connected to the second anode of the diode. This connection provides compensation for temperature and voltage variations in the zener diode caused by anode parasitic resistances and external temperature changes.

Abstract: A temperature stabilized voltage reference is generated based on the difference in the base to emitter voltages of a pair of transistors operating at different current densities which is summed with a voltage that is a predetermined fraction of one of the base emitter voltages. This voltage is utilized to provide for a constant current through a load by adjusting the current through a sense resistor to the value of the temperature stabilized voltage.

Abstract: A temperature-compensated reference voltage circuit includes a transistor having a positive temperature coefficient of current. A circuit for establishing a predetermined current in the positive-temperature-coefficient-of-current transistor is connected to that transistor. A predetermined resistance serially connects the positive-temperature-coefficient-of-current transistor with a transistor having negative temperature coefficient of base-to-emitter voltage. The temperature-compensated reference voltage is established between the transistors. The temperature-compensated reference voltage circuit is particularly useful in a supply voltage sense amplifier circuit for thermal printhead drive transistors or other load elements. The sense amplifier circuit includes a circuit for comparing the reference voltage and a supply voltage. An output is adapted to be connected to a load for receiving the supply voltage.

Abstract: A circuit for generating a reference voltage including a first transistor and a second transistor of which the bases being commonly connected together. The area of the emitter of the first transistor being smaller than the area of the emitter of the second transistor, the emitter of the first transistor being connected to the ground, and the emitter of the second transistor being connected to the ground via a first resistor. The circuit also includes a current supply means which supplies an equal current to the collectors of the first and second transistors and a second resistor which is connected between an output terminal and a connection point of the commonly connected bases of the first and second transistors.

Abstract: A circuit and a method of operation thereof are disclosed to compensate for second order non-linearities in bandgap voltage references. The circuit is readily fabricated as an integrated circuit in conjunction with circuitry utilized to correct linear variations. The circuit accurately compensates for the non-linear bow effect over a temperature range of -55.degree. C. to +150.degree. C.

Abstract: An electronic timepiece contains a supply voltage source which provides a supply voltage controlled in accordance with temperature, whereby power consumption is reduced by supplying the timepiece circuit with only the amplitude of supply voltage required at any particular operating temperature. Voltage control is performed in accordance with variations in propagation times of circuit elements with temperature, as determined by variations in the frequency of a ring oscillator circuit.

Abstract: A two transistor voltage reference circuit controls the ratio of the current densities of two transistors by a negative feedback loop. A voltage corresponding to the difference in the base-to-emitter voltages of the two transistors is developed which has a positive temperature coefficient (TC) and which is connected in series with the base-to-emitter voltage of one of the two transistors having a negative TC. The circuit parameters are selected so that the resultant combined voltage has a predetermined, composite TC. A zener diode is included in the negative feedback loop and arranged to have a TC which cancels the predetermined composite TC to develop a reference voltage having a high magnitude that has minimal variation with temperature change.

Abstract: A temperature compensating voltage generator circuit for compensating temperature characteristics of an electric circuit whose electrical characteristic varies in accordance with the change of the ambient temperature and whose electrical characteristic can be changed or controlled by a control voltage. The temperature compensating voltage generator circuit comprising a plurality of temperature sensitive resistor circuits, a plurality of diode circuits and one or more resistor circuits. A temperature compensating voltage from the temperature compensating voltage generator circuit being independently adjustable at each predetermined temperature.

Abstract: A voltage regulator for use in photovoltaic charging of storage batteries includes a temperature compensated reference voltage. The circuitry of the invention permits fixed temperature coefficient and variable temperature coefficient temperature compensated regulation.The voltage regulator comprises an operational amplifier including a linearly temperature dependent current source coupled to an input terminal of said operational amplifier and a voltage source having a selectable voltage which is connected to another input of said operational amplifier, said reference voltage circuit being operable to provide a reference voltage about equal to a maximum charging voltage for said batteries;a comparator for comparing said reference voltage with an output voltage of said photovoltaic array; anda switch responsive to said comparator to inhibit charging whenever said array output exceeds said reference voltage.

Abstract: In a solid state temperature compensated voltage supply, a differentially coupled pair of transistors is employed to produce a first voltage having a negative temperature coefficient utilizing a unity gain negative feedback amplifier configuration. Means are provided for producing an adjustable voltage having a positive TC across an output resistor coupled to the output of the unity gain feedback amplifier which when added to the negative temperature coefficient voltage produces a net output voltage which has a zero temperature coefficient, low output impedance and high bandwidth independent of operating voltage.

Abstract: A voltage and temperature insensitive reference circuit voltage source for predetermining the proportion of supply voltage to constitute the output voltage including a pull-up device and a pull-down device connected between a source of supply voltage and a reference point. A two element biasing circuit is connected between the source and the pull-down device which is connected to the reference point with the pull-up device comprising a FET having a gate. A connection extends from the biasing circuit at a point between its elements to the gate. An output connection extends from the junction of the pull-up and pull-down device. One of the elements which is connected between the source and the other of the elements is characterized by high resistance relative to the other of the elements whereby the proportion of voltage available at the output connection remains substantially constant regardless of source voltage variation and ambient temperature.

Abstract: A temperature stable voltage reference utilizes an enhancement field effect transistor and a depletion field effect transistor each connected in series with a current source. A differential amplifier has its input terminals separately connected between each of the field effect transistors and their respective current supplies. An input terminal of the field effect transistor is utilized as the reference voltage and is also connected to the gate of one of the field effect transistors, the gate of the other field effect transistor being connected to a reference potential.

Abstract: The current flowing through a reference resistor constitutes the temperature independent output voltage. This current consists of the sum of a first and second current. The first current is a current which is proportional to absolute temperature and has an amplitude which depends on the value of the first resistor. The second current is proportional to the base-emitter voltage of a transistor and its amplitude depends on the value of the second resistor. The values of the first and second resistor are fixed so that the temperature coefficient of the current flowing through the reference resistor is zero. Specifically, one end of the reference resistor is connected to one side of the operating voltage source while the other side is connected through a series circuit including the emitter-collector circuit of the first transistor and the first resistor to ground potential. A second circuit is connected in parallel with the first circuit.