Abstract: Methods, systems, and devices for decoder architectures for three-dimensional memory devices are described. In some cases, a decoder for a memory device may include two portions. A first portion of the decoder may be manufactured on top of the memory array, and may include a pillar decoding portion to selectively bias a first array of decoding elements coupled with conductive pillars of the memory array and a word line decoding portion to selectively bias a second array of decoding elements coupled with word lines of the memory array. A second portion of the decoder may be implemented in a separate semiconductor device which may include a set of logic circuits configured to drive signal to a set of contacts bonded to contacts of the first portion to drive the digit lines, voltage sources, and gate lines.

Abstract: An electronic device includes two multiplexer branches, a modulation circuit, and an output interface coupled to the modulation circuit and two multiplexer branches. A first multiplexer branch generate s first output signal from a first selection signal, a first inverse signal, and a first input signal. The first inverse signal is substantially complementary to the first selection signal. A second multiplexer branch generates a second output signal from the first selection signal, the first inverse signal, and a second input signal. The modulation circuit generates a logic output signal from the first input signal and the second input signal, independently of the first selection signal and the first inverse signal. The output interface generates a multiplexed signal tracking one of the first input signal and the second input signal based on the first output signal, the second output signal, and the logic output signal.

Abstract: Methods, systems, and devices for power gating in a memory device are described for using one or more memory cells as drivers for load circuits of a memory device. A group of memory cells of the memory device may represent memory cells that include a switching component and that omit a memory storage element. These memory cells may be coupled with respective plate lines that may be coupled with a voltage source having a first supply voltage. Each memory cell of the group may also be coupled with a respective digit line that may be coupled with the load circuits. Respective switching components of the group of memory cells may therefore act as drivers to apply the first supply voltage to one or more load circuits by coupling a digit line with a plate line having the first supply voltage.

Abstract: An emulation processor may be configured to support emulating unknown binary logic based on non-arbitrariness of the unknown binary logic. For example, an unknown binary logic signal may take the finite binary values of 0 and 1. The circuitry in the emulation processor is configured to generate and propagate outputs based on the interactions of known input binary signals with the unknown input binary signals having non-arbitrary states. The emulation processor may support the both combinational and sequential operations associated with the unknown binary logic.

Abstract: In an approach for decreasing a rate of logic voltage level transitions in a multiplexor, one of a plurality of inputs to a multiplexor is selected with a first multiplexor select value at a first clock, wherein each input to the multiplexor is identified as one of i) valid and ii) invalid and the first multiplexor select value is latched in a latch until the first multiplexor select value is replaced by a second multiplexor select value. The second multiplexor select value is determined. The second multiplexor select value is applied to the multiplexor at a second clock if and only if the second multiplexor select value is different from the first multiplexor select value and the second multiplexor select value selects a valid input, wherein the second clock follows the first clock. Subsequent to applying the second multiplexor select value, the second multiplexor value is latched in the latch.

Abstract: Methods and apparatus relating to an adaptive multibit bus for energy optimization are described. In an embodiment, a 1-bit interconnect of a processor is caused to select between a plurality of operational modes. The plurality of operational modes comprises a first mode and a second mode. The first mode causes transmission of a single bit over the 1-bit interconnect at a first frequency and the second mode causes transmission of a plurality of bits over the 1-bit interconnect at a second frequency based at least in part on a determination that an operating voltage of the 1-bit interconnect is at a high voltage level and that the second frequency is lower than the first frequency. Other embodiments are also disclosed and claimed.

Abstract: Predicting data correlation using multivalued logical outputs in SRAM storage cells including generating a plurality of logical outputs for each of a plurality of variable sets, wherein each variable in each variable set is a data point, and wherein each logical output is a binary indication of a relationship between the data points; writing, into storage cells, each logical output of the plurality of logical outputs for each of the plurality of variable sets; and for each group of corresponding logical outputs of the plurality of logical outputs: activating a fight port for the storage cells storing corresponding logical outputs, wherein activating the fight port causes each corresponding logical output to adjust a resulting voltage based on the logical output stored in each storage cell; and measuring the resulting voltage on a bitline of the activated fight port to determine a correlation probability for the corresponding logical outputs.

Abstract: A reconfigurable circuit includes first and second wires and two or more paths active at different times. Each path includes: a first NVRS whose first terminal is connected to the first wire; a first transistor whose drain terminal is connected to a second terminal of the first NVRS; a second NVRS whose first terminal is connected to the second terminal of the first NVRS; a second transistor whose source terminal is connected to a second terminal of the second NVRS and whose drain terminal is connected to the second wire; and a 2-input AND circuit whose output is connected to a gate terminal of the first transistor. A time control signal is supplied to a first input of the 2-input AND circuit and a gate terminal of the second transistor. A write control signal is supplied to a second input of the 2-input AND circuit.

Abstract: A removable non-volatile memory device durably stores a serial number or identifier, which is used to mark multimedia content legally stored on the removable non-volatile memory device. In order to retrieve the serial number, a host electronic system coupled to the removable non-volatile memory device sends a sequence of multiple file access commands to access a predefined target file stored on the removable non-volatile memory device. In accordance with the executed predefined sequence of multiple file access commands, a corresponding sequence of data access commands are received at the removable non-volatile memory device and are interpreted as a request by the host electronic device to read the serial number. The removable non-volatile memory device outputs the serial number in response to the sequence of data access commands.

Abstract: Embodiments may be generally directed to techniques to encrypt and decrypt data in a first fuse block array using an encryption key of a second fuse block array, the second fuse block array having the encryption key comprising a plurality of segments of bits, an inverse encryption key comprising a second plurality of segments of bits, each segment of the inverse encryption key to correspond with a particular segment of the encryption key, and a random pattern having equally distributed bit values, the random pattern to enable detection of voltage attacks on the second fuse block array.

Abstract: A circuit device includes: a time-to-digital conversion circuit to which a first clock signal with a first clock frequency and a second clock signal with a second clock frequency different from the first clock frequency are input and that converts a time difference in transition timings of first and second signals into a digital value; and a synchronization circuit that synchronizes phases of the first and second clock signals. The time-to-digital conversion circuit calculates the digital value corresponding to the time difference by transitioning a signal level of the first signal based on the first clock signal after a phase synchronization timing of the first and second clock signals and compares the phase of the second clock signal to a phase of the second signal having a signal level is transitioned to correspond to the first signal.

Abstract: Described is an apparatus which comprises: a first feedback loop to generate a control signal for regulating an output voltage provided to a load; and a second feedback loop, separate from the first feedback loop, to receive the control signal from the first feedback loop, the second feedback loop to regulate the output voltage provided to the load.

Abstract: Predicting data correlation using multivalued logical outputs in SRAM storage cells including generating a plurality of logical outputs for each of a plurality of variable sets, wherein each variable in each variable set is a data point, and wherein each logical output is a binary indication of a relationship between the data points; writing, into storage cells, each logical output of the plurality of logical outputs for each of the plurality of variable sets; and for each group of corresponding logical outputs of the plurality of logical outputs: activating a fight port for the storage cells storing corresponding logical outputs, wherein activating the fight port causes each corresponding logical output to adjust a resulting voltage based on the logical output stored in each storage cell; and measuring the resulting voltage on a bitline of the activated fight port to determine a correlation probability for the corresponding logical outputs.

Abstract: A memory device includes a plurality of banks suitable for including a plurality of word lines, a plurality of latch units each suitable for generating a first address by inverting a predetermined bit of an address of an activated word line of a corresponding bank and latching the first address as a target address in sections other than a target refresh section, and latching an operation address as the target address once in an all-bank refresh section of the target refresh section, wherein all of the plurality of banks are refreshed in the all-bank refresh section. All the plurality of banks are refreshed in the all-bank refresh section, and an address operation unit suitable for generating the operation address by adding or subtracting an operation value to or from the target address. A word line among the plurality of word lines that is selected using the target address may be refreshed in the target refresh section.

Abstract: A semiconductor device includes a 2-input NAND decoder and an inverter that have six MOS transistors arranged in a line. The MOS transistors of the decoder are formed in a planar silicon layer disposed on a substrate and each have a structure in which a drain, a gate, and a source are arranged vertically and the gate surrounds a silicon pillar. The planar silicon layer includes a first active region having a first conductivity type and a second active region having a second conductivity type. The first and second active regions are connected to each other via a silicon layer on a surface of the planar silicon layer.

Abstract: The present invention provides a computer system including a CPU with an L2 cache, a bus master device and a bus slave device. They are connected via a system bus to communicate with each other. The computer system 100 includes: a transaction monitor 60 for monitoring first transaction states TrC1-TrCn between a CPU 20 and an L2 cache 25, and second transaction states from TrB0 to TrBn between a system bus 10 and the L2 cache 25, between the system bus 10 and a bus master device 30 or between the system bus 10 and bus slave devices 40, 42; and a clock generator 70 able to change the frequency FreqC1-FreqS2 of the clock of the CPU 20, the system bus 10, and the bus slave devices 40, 42 according to the first transaction and second transaction states received from the transaction monitor 60.

Abstract: A communication system includes a receiver for decoding data having three states of ?1, 0, and 1. The receiver includes a first input coupled to a first data line, a second input coupled to a second data line, and a third input coupled to a third data line. A first comparator is coupled to a first output, wherein the first comparator is for generating data signals in response to the sign of voltages on the first data line minus voltages on the second data line. A second comparator is coupled to a second output, wherein the second comparator is for generating clock signals in response to the sign of voltages on the third data line minus the average of voltages on the first and second data lines.

Abstract: An integrated circuit includes an array of phase-change memory (PCM) cells, a plurality of wordlines coupled to the array of PCM cells, and a row decoder circuit coupled to the plurality of wordlines. The row decoder circuit includes a first low voltage logic gate and a first high voltage level shifter coupled to the first low voltage logic gate. The row decoder circuit also includes a second low voltage logic gate, a second high voltage level shifter coupled to the second low voltage logic gate, and a first low voltage logic circuit coupled to the second low voltage logic gate. In addition, the row decoder circuit includes a second low voltage logic circuit coupled to the second low voltage logic gate, and a low voltage wordline driver having an input coupled to the outputs of the first and second low voltage logic gates, and an output coupled to a selected wordline.

Abstract: A circuit includes a first transistor and a second transistor of a first type. The circuit further includes a first transistor of a second type. A first first-type drain is coupled to a second first-type source. A first first-type source is configured to have a first voltage value. A first first-type gate is configured to have a first control signal. A second first-type drain is configured to serve as a wordline. A second first-type gate is configured to have a second voltage value. A first second-type source is configured to have a third voltage value. A first second-type gate is configured to have a second control signal. The first transistor and the second transistor of the first type are configured to provide the first voltage value for the wordline. The first transistor of the second-type is configured to provide the third voltage value the wordline.

Abstract: In one implementation, flash memory chips are provided with an operating power supply voltage to substantially match a power supply voltage expected at an edge connector of a dual inline memory module. The one or more of the flash memory chips and a memory support application integrated circuit (ASIC) may be mounted together into a multi-chip package for integrated circuits. The one or more flash memory chips and the memory support ASIC may be electrically coupled together by routing one or more conductors between each in the multi-chip package. The multi-chip package may be mounted onto a printed circuit board (PCB) of a flash memory DIMM to reduce the number of packages mounted thereto and reduce the height of the flash memory DIMM. The number of printed circuit board layers may also be reduced, such as by integrating address functions into the memory support ASIC.

Abstract: Electronic logic gates that operate using N logic state levels, where N is greater than 2, and methods of operating such gates. The electronic logic gates operate according to truth tables. At least two input signals each having a logic state that can range over more than two logic states are provided to the logic gates. The logic gates each provide an output signal that can have one of N logic states. Examples of gates described include NAND/NAND gates having two inputs A and B and NAND/NAND gates having three inputs A, B, and C, where A, B and C can take any of four logic states. Systems using such gates are described, and their operation illustrated. Optical logic gates that operate using N logic state levels are also described.

Abstract: Decoder circuits having negative differential resistance (NDR) devices are described. In an example, a decoder circuit includes a plurality of input lines to receive select signals, a bias logic to provide a voltage bias, a plurality of output lines to provide output signals, and a plurality of metal-insulator-metal (MIM) threshold switches coupled to the plurality of input lines, the bias logic, and the plurality of output lines. Each of the plurality of MIM threshold switches operating as either a current-controlled positive or negative resistance to map an input logic state of the select signals to an output logic state of the output signals.

Abstract: Methods and apparatus for decoding of binary addresses and scanning rows and columns of an addressable array. In one example, an address decode circuit includes a first decoder circuit configured to partition an N-bit address into a plurality of address segments, each address segment including fewer than N bits, and N being a positive integer, the first decoder circuit configured to provide a plurality of first-stage decoded address outputs, and a second orthogonal decoder circuit coupled to the first decoder circuit and configured to receive the first-stage decoded address outputs and to produce 2N unique addresses from unique combinations of the plurality of first-stage decoded address outputs.

Abstract: A selector circuit includes a plurality of first selection circuits each configured to select one of plural input signals on the basis of a first selection control signal and to output a first output signal and a second selection circuit configured to select one of the first output signals on the basis of a second selection control signal. Each of the first selection circuits includes a charging circuit configured to charge a first node by electrically connecting the first node to a first voltage in a first period, and a discharge control circuit configured to control, on the basis of the first selection control signal, the input signals and the second selection control signal, whether to discharge the charged first node by electrically connecting the first node to a second voltage source having a potential lower than the first voltage source in a second period following the first period.

Abstract: A parallel implementation of the Viterbi decoder becomes more efficient when it employs end-state information passing as disclosed herein. The improved efficiency enables the usage of less area and/or provides the capacity to handle higher data rates within a given heat budget. In at least some embodiments, a decoder chip employs multiple decoders that operate in parallel on a stream of overlapping data blocks, using add-compare-select operations, to obtain a sequence of state metrics representing a most likely path to each state. Each decoder passes information indicative of a selected end-state for a decoder operating on a preceding data block. Each decoder in turn receives, from a decoder operating on a subsequent data block, the information indicative of the selected end-state. The end-state information eliminates any need for post-data processing, thereby abbreviating the decoding process.

Abstract: A circuit implementing a soft logical processing network includes an interconnection of analog processing elements, which can include soft logic gates, for instance soft Equals gates and soft XOR gates. In some examples, each of the soft logic gates include multiple circuit parts, with each part including an input configured to accept a voltage signal representation of a soft logical quantity, and a conversion section configured to use the accepted voltage representation to form a corresponding current signal. The current signals are combined to form a signal representation of the output of the gate.

Abstract: A decoder for decoding an address having a plurality of bits ranging from a first address bit a1 to a last address bit aN, each address bit being either true or false is provided that includes a pre-charge circuit adapted to pre-charge a dynamic NOR node and a dynamic OR node and then allow the pre-charged dynamic NOR node and pre-charged dynamic OR node to float; a plurality of switches coupled between the dynamic NOR node and ground, each switch corresponding uniquely to the address bits such that the switches range from a first switch corresponding to a1 to an nth switch corresponding to aN, wherein any switch corresponding to a true address bit is configured to turn on only if its corresponding address bit is false, and wherein any switch corresponding to a false address bit is configured to turn on only if its corresponding address bit is true.

Abstract: A decoder for sequentially enabling outputs in response to clock signal inputs is described including X number of logic stages corresponding to X number of outputs of the decoder. Each of the logic stages has a plurality of inputs, wherein each logic stage includes fewer than log2X inputs for receiving the clock signal inputs.

Abstract: According to an embodiment, a method of preventing the alteration of a stored data value is disclosed. The method comprises coupling a first electronic fuse to an output control circuit; coupling a second electronic fuse to the output control circuit; decoding the states of the first electronic fuse and the second electronic fuse after a first processing step to generate a first decoded state; and decoding the states of the first electronic fuse and the second electronic fuse after a second processing step to generate a second decoded state different from the first decoded state; wherein the output control circuit maintains the second decoded state after an attempt to alter a state of an electronic fuse of the first electronic fuse and the second electronic fuse. A circuit for preventing the alteration of a stored data value is also described.

Abstract: A decoder for sequentially enabling outputs in response to clock signal inputs is described including X number of logic stages corresponding to X number of outputs of the decoder. Each of the logic stages has a plurality of inputs, wherein each logic stage includes fewer than log2X inputs for receiving the clock signal inputs.

Abstract: A multiplex gate driving circuit includes plural driving modules. In comparison with the prior art, each driving stage of the driving module has less number of transistors. From the first to the seventh example, each driving stage is implemented by only four transistors. In the eighth example and the ninth example, each driving stage is implemented by only two transistors. In other words, the driving stage of the multiplex gate driving circuit has less number of transistors, thereby reducing the layout area of the invisible zone of the LCD panel.

Abstract: Quad-state logic elements and quad-state memory elements are used to reduce the wiring density of integrated circuits. The resulting reduction in wiring interconnects between memories and logic elements results in higher speed, higher density, and lower power integrated circuit designs.

Abstract: A selector circuit includes a plurality of first selection circuits each configured to select one of plural input signals on the basis of a first selection control signal and to output a first output signal and a second selection circuit configured to select one of the first output signals on the basis of a second selection control signal. Each of the first selection circuits includes a charging circuit configured to charge a first node by electrically connecting the first node to a first voltage in a first period, and a discharge control circuit configured to control, on the basis of the first selection control signal, the input signals and the second selection control signal, whether to discharge the charged first node by electrically connecting the first node to a second voltage source having a potential lower than the first voltage source in a second period following the first period.

Abstract: Methods and apparatus for decoding of binary addresses and scanning rows and columns of an addressable array. In one example, an address decode circuit includes a first decoder circuit configured to partition an N-bit address into a plurality of address segments, each address segment including fewer than N bits, and N being a positive integer, the first decoder circuit configured to provide a plurality of first-stage decoded address outputs, and a second orthogonal decoder circuit coupled to the first decoder circuit and configured to receive the first-stage decoded address outputs and to produce 2N unique addresses from unique combinations of the plurality of first-stage decoded address outputs.

Abstract: A decoder for decoding an address having a plurality of bits ranging from a first address bit a1 to a last address bit aN, each address bit being either true or false is provided that includes a pre-charge circuit adapted to pre-charge a dynamic NOR node and a dynamic OR node and then allow the pre-charged dynamic NOR node and pre-charged dynamic OR node to float; a plurality of switches coupled between the dynamic NOR node and ground, each switch corresponding uniquely to the address bits such that the switches range from a first switch corresponding to a1 to an nth switch corresponding to aN, wherein any switch corresponding to a true address bit is configured to turn on only if its corresponding address bit is false, and wherein any switch corresponding to a false address bit is configured to turn on only if its corresponding address bit is true.

Abstract: Systems and methods for managing a write operation are described. The systems include a logic element (LE) including an N-input look-up table (LUT) having a configurable random access memory (CRAM) including 2N memory cells. The systems further include a write address decoder coupled to the LE and a write address hard logic register that stores an address of one of the memory cells. N is an integer. The hard logic register removes a dependency of a timing relationship between a write address launch and a write to the CRAM on a design of an integrated circuit.

Abstract: A normally operable decoder circuit is obtained without entailing a delay in decoding operation, an increase in circuit area, and an increase in circuit design cost. An NMOS transistor in a high-voltage circuit portion is inserted between the output of a NAND gate and a node, and receives an input signal at the gate electrode thereof. A load current generating portion in the high-voltage circuit portion includes PMOS transistors coupled in series between a high power supply voltage and the node. One of the PMOS transistor receives a control signal at the gate electrode thereof. The other PMOS transistor receives a control signal at the gate electrode thereof. An inverter receives a signal obtained from the node as an input signal, and outputs the inverted signal thereof as an output signal.

Abstract: The present invention relates to a digital signal processing circuit, and more particularly, to a method and apparatus for generating a maximum value or a minimum value used for designing the digital signal processing circuit. An apparatus for obtaining a maximum value or a minimum value from N digital input signals may include N×W bit processing elements to receive an input of W bits of each of the N digital input signals, W OR operators to receive an input of N operation values output from bit processing elements, and to perform an OR operation, respectively, and W inverters to invert an output value for each of the W OR operators.

Abstract: A system comprises a plurality of requesting agents and granting agents configured in an array of rows and a plurality of columns. Corresponding to each requesting agent is a plurality of row address decoders and column address decoders, one row decoder for each row of granting agents and one column decoder for each column of granting agents. Each row decoder receives a first subset of an address' bits from a requesting agent and generates a row output bit provided to each granting agent in the row of that row address decoder. Each column decoder receives a second subset of bits of the address and generates a column output bit provided to each granting agent in the column corresponding to such column decoder. Each granting agent logically combines the row and column output bits from row and column decoders of a requesting agent to generate a request signal for the granting agent.

Abstract: Disclosed herein is a logic circuit which responds to three signals to detect whether the number of signals taking one of logic-1 and logic-0 is odd or even, and includes five NAND gates. The first NAND gate is supplied with the first signal, the second signal and the third signal; the second NAND gate is supplied with the inverted first signal, the inverted second signal and the third signal; the third NAND gate is supplied with the first signal, the inverted second signal and the inverted third signal; and the fourth NAND gate is supplied with the inverted first signal, the second signal and the inverted third signal. The fifth NAND gate is supplied with outputs of first, second, third and fourth NAND gates and produces the output signal whose logic level is dependent on whether the number of the input signals taking one of logic-1 and logic-0 is odd or even.

Abstract: A scan driver includes a voltage setting circuit, a counter circuit, a logic circuit, a dynamic decoder, N level shift circuits and N output stage circuits, wherein N is a natural number. The voltage setting circuit sets N voltage signals to a first level. The counter circuit provides count data to the logic circuit, which generates M control signals according to the count data, wherein M is a natural number. The dynamic decoder includes multiple transistors, arranged in N rows, for receiving the respective N voltage signals. The transistors are further arranged in M columns and are controlled by the respective M control signals to determine levels of the N voltage signals. The N level shift circuits lift the levels of the respective N voltage signals, and the N output stage circuits output respective N gate signals based on the N voltage signals whose levels are shifted.

Abstract: A circuit implementing a soft logical processing network includes an interconnection of analog processing elements, which can include soft logic gates, the soft logic gates including one or more soft logic gates. In some examples, each of the soft logic gates include multiple circuit parts, with each part including an input configured to accept a voltage signal representation of a soft logical quantity, and a conversion section configured to use the accepted voltage representation to form a corresponding current signal. The current signals are combined to form a signal representation of the output of the gate.

Abstract: A decoder for sequentially enabling outputs in response to clock signal inputs is described including X number of logic stages corresponding to X number of outputs of the decoder. Each of the logic stages has a plurality of inputs, wherein each logic stage includes fewer than log2X inputs for receiving the clock signal inputs.

Abstract: The invention relates to a switching matrix for an input device such as a keyboard or a cursor device for the detection of different switching states. According to the invention the switching matrix has a group electrically connected to a microcontroller, with a plurality of N input and output lines (I/O-lines) with a serially connected terminating resistor to mass each and a group with a plurality of K switching lines with one switching element each. Each switching line connects two of the N I/O lines to each other. The K switching line have an additional series resistor each. According to an interrogation pattern, a first I/O-line as output line is configured with a high potential, a second I/O-line is configured as input line and each further I/O-line as output line is configured with a low potential of the microcontroller.

Abstract: Disclosed is a logic circuit includes a first NAND gate that receives a first pulse signal and a first selection signal, a first inverter gate that inverts an output signal of the first NAND gate to output a resulting signal, a second NAND gate that receives a second pulse signal and the first selection signal, a second inverter gate that inverts an output signal of the second NAND gate, a first PMOS transistor with a drain terminal connected to an output of the first NAND gate, a gate terminal connected to an output of the second NAND gate and a source terminal connected to a power supply voltage, and a first NMOS transistor with a drain terminal connected to an output of the first inverter gate, a gate terminal connected to an output of the second inverter gate and a source terminal connected to a ground potential.

Abstract: A normally operable decoder circuit is obtained without entailing a delay in decoding operation, an increase in circuit area, and an increase in circuit design cost. An NMOS transistor in a high-voltage circuit portion is inserted between the output of a NAND gate and a node, and receives an input signal at the gate electrode thereof. A load current generating portion in the high-voltage circuit portion includes PMOS transistors coupled in series between a high power supply voltage and the node. One of the PMOS transistor receives a control signal at the gate electrode thereof. The other PMOS transistor receives a control signal at the gate electrode thereof. An inverter receives a signal obtained from the node as an input signal, and outputs the inverted signal thereof as an output signal.

Abstract: Quad-state logic elements and quad-state memory elements are used to reduce the wiring density of integrated circuits. The resulting reduction in wiring interconnects between memories and logic elements results in higher speed, higher density, and lower power integrated circuit designs.

Abstract: Logic circuits provide networks to simulate the functions of neural networks of the brain, and can discriminate degrees of state, and combinations of degrees of state, corresponding to a number of neurons. Logic circuits comprise Recursive AND NOT Conjunctions (RANCs), or AND NOT gates. A RANC is a general logic circuit that performs conjunctions for 2n possible combinations of truth values of n propositions. The RANCs function dynamically, with capabilities of excitation and inhibition. Networks of RANCs are capable of subserving a variety of brain functions, including creative and analytical thought processes. A complete n-RANC produces all conjunctions corresponding to the 2n possible combinations of truth values of n propositions.

Abstract: A system for fast determination of a horizontal minimum of multiple digital values including a difference circuit and a compare circuit. The difference circuit may include first and second adders in which the first adder compares upper bits of a first digital value with upper bits of a second digital value and provides a first carry output and a propagate output. The second adder compares lower bits of the first digital value with lower bits of the second digital value and provides a second carry output. The compare circuit determines whether the first digital value is greater than the second digital value based on the carry and propagate outputs. Multiple difference circuits may be used to compare each of multiple digital values with every other digital value to provide corresponding compare bits, which are then used to determine a minimum one of the digital values and its corresponding location.

Abstract: In one embodiment, a non-volatile memory includes a first buffer that receives notification of power-down and outputs a first signal changed from a first value to a second value based on the notification, a first controlling unit that receives and outputs a command signal, a second controlling unit that generates and outputs a basic signal that has a third value when the command signal output from the first controlling unit indicates an active command and has a fourth value when the command signal indicates a command corresponding to a write back instruction or the first signal has the second value, a memory cell array in which memory cells are arrayed, and a sense amplifier circuit that reads data from the memory cell.