Abstract: An apparatus can include tracking circuitry coupled to a current source and configured to generate a reference voltage signal based on a reference current signal from the current source. The apparatus can include voltage regulator circuitry coupled to the tracking circuitry and configured to generate a voltage supply signal based on the reference voltage signal. The apparatus can further include amplifier circuitry configured to amplify an input signal based on the voltage supply signal. The reference voltage signal can track process and temperature variations associated with at least one field effect transistor within the tracking circuitry. The voltage regulator circuitry can be configured to operate with a closed loop gain higher than 1. The tracking circuitry includes a first transistor connected in parallel with a second transistor, the first and second transistors having a complimentary type with each other (e.g., NMOS and PMOS transistors).

Abstract: One aspect disclosed herein relates to a method for forming a programmable logic array. Various embodiments of the method include forming a first logic plane and a second logic plane, each including a plurality of logic cells interconnected to implement a logical function. Forming the logic cells includes forming a horizontal substrate with a source region, a drain region, and a depletion mode channel region separating the source and the drain regions, and further includes forming a number of vertical gates located above different portions of the depletion mode channel region. At least one vertical gate is separated from the depletion mode channel region by a first oxide thickness, and at least one of the vertical gates is separated from the depletion mode channel region by a second oxide thickness. Other aspects and embodiments are provided herein.

Abstract: A decode circuit for selecting one of a plurality of output lines in dependence on the status of a plurality of input lines, the circuit comprising: a first decode arrangement comprising: a first decode node; first precharging circuitry for charging the first decode node to a charging potential; first discharging circuitry comprising a plurality of switching means each operable in dependence on the status of a respective one of the input lines to couple the first decode node to a discharging potential; and first selection circuitry coupled to a respective one of the output lines and operable in response to a first enable signal to select that output line if the first decode node has not discharged; and a second decode arrangement comprising: a second decode node; second precharging circuitry for charging the second decode node to a charging potential; second discharging circuitry comprising a plurality of switching means each operable in dependence on the status of a respective one of the input lines to coupl

Abstract: A reverse biasing logic circuit is disclosed for limiting standby leakage electric current losses during circuit operation. The circuit includes a logic function circuit having one or more logic transistors that receive an input and perform a logic function operation to generate an output. A power source transistor connects to the logic function circuit and receives a control signal that changes node voltages of the one or more logic transistors between an active mode and a standby mode. During the standby mode, the power source transistor causes reverse biasing of at least one of the one or more logic transistors which prevents a leakage electric current flow between the power source transistor and the one or more logic transistors.

Abstract: A driver circuit for use in driving displays has an input receiving a digital input data having n bits for selecting one of a plurality of voltage levels for driving the circuit. The circuit also has an output, a plurality of digital signal lines coupled to the digital input data, and a plurality of active regions coupled to a first side of the output. Each of the plurality of active regions is coupled to a separate voltage level. The circuit further includes a plurality of pass transistors at a first subset of locations where the plurality of digital signal lines overlap the plurality of active regions, and a plurality of depletion-implanted transistors at a second subset of locations where the plurality of digital signal lines overlap the plurality of active regions. The number of the plurality of digital signal lines on one side of the output can be odd number, such as 2n−1, or can be 2n−2.

Abstract: A decoder includes multiple decode gates, each to provide one bit of a decoded output signal. At least two of the decode gates share a transistor. According to one aspect, each of the multiple decode gates is a skewed gate.

Abstract: An integrated circuit includes a serpentine conductor track extending through a plurality of conductor layers and having ends coupled to first and second circuit elements, the ends being in opposing outermost ones of the conductor layers. The serpentine conductor track can selectively be made to be (i) continuous and electrically couple the first and second circuit elements together or (ii) discontinuous so that the first and second conductor elements are not electrically coupled. In the latter case, the discontinuity can be formed in any one of the conductor layers and a bridging conductor track is further formed in that one conductor layer which is coupled to the serpentine conductor track and which bypasses either of the first and second circuit elements. This structure has the advantage that circuit changes can be made in any conductor layer.

Abstract: A command user interface with via mask programmability includes a decoder with transistors selectively coupleable to one of an input or its complement. This is accomplished in one way by making vias in an appropriate location to allow interconnection of the appropriate contact and the gate of the transistor.

Abstract: There is disclosed a field effect transistor logic circuit having an output terminal to be connected to a gate of an input field effect transistor in a next stage field effect transistor logic circuit. The field effect transistor logic circuit includes a depletion transistor having a drain connected to a first power supply voltage, an enhancement transistor having a drain connected at a node in common to a gate and a source of the depletion transistor. A gate of the enhancement transistor is connected to an input terminal, and a source of the enhancement transistor is connected to a second power supply voltage which is lower than the first power supply voltage.

Abstract: The invention relates to a row decoding circuit for an electrically programmable and erasable semiconductor non-volatile storage device of the type which includes a matrix of memory cells laid out as cell rows and columns and is divided into sectors, said circuit being input row decode signals and supply voltages in order to drive an output stage incorporating a complementary pair of high-voltage MOS transistors of the pull-up and pull-down type, respectively, which are connected to form an output terminal connected to the rows of one sector of the matrix, characterized in that a MOS transistor of the P-channel depletion type with enhanced gate oxide is provided between the output terminal and the pull-down transistor. The control terminal of the depletion transistor forms a further input of the circuit.

Abstract: Depletion mode pass gates utilized in a PLD to enable a gate voltage of Vcc to be applied for turn off, as opposed to a higher voltage required for enhancement type devices. With Vcc applied for turn off, gate oxide stress is reduced and chip reliability increased. A decoder utilizing PMOS transistors is further used to supply a negative gate voltage to enable turn off of the depletion mode pass gates. In one embodiment, to prevent pumping the power supply voltage above Vcc when supplying Vcc to gates of the pass gates, the decoder is an all PMOS device using PMOS transistors to connect Vcc to gates of the pass gates. In another embodiment both NMOS and PMOS transistors are utilized, with PMOS blocking transistors utilized to prevent a negative voltage from being applied to the NMOS transistors and causing current leakage. A negative voltage pump is further provided to supply a sufficient negative voltage.