Abstract: The clock input of a buck converter is delayed, preventing sub-harmonic oscillation. The function may be achieved by implementing a clock delay generation circuit, configured to delay a next clock pulse by an amount of time directly proportional to the most recent on time of the high-side switch for peak-mode current control, inversely proportional to the most recent on time of the low-side switch for peak-mode current control, inversely proportional to the most recent on time of the high-side switch for valley-mode current control, or inversely proportional to the clock minus the most recent on time of the high-side switch for valley-mode current control.

Abstract: The clock input of a buck converter is delayed, and the delay is controlled proportionally to the preceding high-side output switch on time. In the steady state, the high-side switch on time is uniform, and the clock is offset by a fixed amount. When sub-harmonic oscillation begins to occur, the high-side switch on time may increase during a cycle. The longer high-side on time causes the clock to be delayed by an increased amount. This has the effect of increasing the following low-side output switch on time. This further increases the subsequent high-side on time, and counteracts the effects of sub-harmonic oscillation. If the system is properly controlled, loop compensation is implemented correctly and sub-harmonic oscillation is prevented. In addition, the scheme may also be configured for the delay to be controlled proportionally to the preceding low-side output switch on time of the buck converter.

Abstract: Described is an apparatus which comprises: a first layer formed of a material that exhibits spin orbit torque effect; a second layer formed of material that exhibits spin orbit torque effect; and a magnetic tunneling junction (MTJ) including first and second free magnetic layers, wherein the first free magnetic layer is coupled to the first layer and wherein the second free magnetic layer is coupled to the second layer.

Abstract: An example embodiment includes a fiber optic integrated circuit (IC). The fiber optic IC includes an integrated power supply. The integrated power supply includes a filter, an active switch, and a pulse width modulator (“PWM”). The filter is configured to convert a signal to an output signal of the integrated power supply. The active switch is configured to control introduction of the signal to the filter. The PWM is configured to generate a PWM output signal that triggers the active switch.

Abstract: In one example, an oxide-based negative differential resistance comparator circuit includes a composite NDR device that includes a first electrode, a first thin film oxide-based negative differential resistance (NDR) layer in contact with the first electrode and a central conductive portion. The composite NDR device also includes a second thin film oxide-based NDR layer disposed adjacent to the first NDR layer and a second electrode. A resistor may be placed in series with the composite NDR device and an electrical energy source can apply applying a voltage across the first electrode and second electrode. The composite NDR device produces a threshold based comparator functionality in the comparator circuit.

Abstract: A switching matrix has a first number of inputs and a second number of outputs as well as a conductor arrangement and controllable switching elements by means of which the inputs can be connected with the outputs. The controllable switching elements are fashioned such that at least two independent control signals are required to trigger a switching event.

Abstract: The present invention relates to a SET/RESET latch circuit a Schmitt trigger circuit, and a MOBILE based D-type flip flop circuit and frequency divider circuit using the SET/RESET latch circuit and Schmitt trigger circuit. The SET/RESET latch circuit is configured with CML-type transistors and negative differential resistance diodes. The SET/RESET latch circuit can be applied to very high speed digital circuits.

Abstract: The present invention relates to a literal gate using resonant tunneling diodes; and, more particularly, to a literal gate using only resonant tunneling diodes (RTDs). The present invention has an advantage in that it can provide a literal gate using resonant tunneling diodes, using fewer elements than a convention literal gate, utmost utilizing the input-output characteristics of an RTD, and reducing fabricating costs and improving a yield.

Abstract: MTJ cell based logic circuits and MTJ cell drivers having improved operating speeds compared to the conventional art, and operating methods thereof are described.

Abstract: An inverting flip-flop (F/F) circuit type monostable-bistable transition logic element (MOBILE) circuit that uses resonant tunneling diodes (RTDs) and can prevent a malfunction caused by low peak-to-valley current ratio (PVCR) characteristics of the RTD includes an input data conversion circuit and an inverting F/F circuit. The input data conversion circuit receives input data and converts a logic level of the input data according to a logic level of output data of the MOBILE circuit. The inverting F/F circuit inverts a logic level of data output from the input data conversion circuit and outputs the output data. Accordingly, even when a logic level of input data changes from LOW to HIGH, the logic level of output data can be maintained HIGH in the inverting F/F type MOBILE circuit constructed using silicon semiconductor based RTDs with a small PVCR. Therefore, it is possible to enhance the performance of the inverting F/F circuit type MOBILE circuit.

Abstract: The present invention relates to CML(Current Mode Logic)-type input driving method and tunneling diode logic using MOBILE(Monostable Nistable transition Logic Element) configuration, as kinds of very high-speed digital logic circuits. The objectives of the present invention are to improve the disadvantage of MOBILE circuit configuration that is an existing tunneling diode logic, and at the same time provide new MOBILE based logic functions. Wherein, the difficulty for input voltage adjustment is resolved by replacing the input part with a CML input driving gate, and speed problem due to transistor is resolved. Moreover, a plurality of logic functions such as inverted return-to-zero D flip-flop, non-inverted return-to-zero D flip-flop, return-to-zero OR gate, return-to-zero D flip-flop generating differential output, and optical flip-flop are implemented.

Abstract: A method and state stabilizer for enhancing computing functionality by using fast excitations are described. The state stabilizer includes a voltage source for producing fast excitations having an associated excitation amplitude. An electronic device having an associated negative differential resistance region is also included. The excitation amplitude is greater than a width of the negative differential resistance region.

Abstract: There is disclosed an impedance circuit which realizes negative impedance with ease, and a power supply device having negative output impedance. An impedance circuit 1 connected to an external circuit comprises: a current inverter circuit 11 having an input terminal connected to outside; a passive circuit 10 having an input terminal connected to an output terminal of the current inverter circuit 11; and a current inverter circuit 12 having an input terminal connected to an output terminal of the passive circuit 10 and an output terminal connected to outside. The current inverter circuits 11 and 12 work in cooperation with each other, to make magnitude of impedance of the impedance circuit 1 proportional to impedance of the passive circuit 10, and to invert the polarity of the impedance of the impedance circuit 1.

Abstract: A digital communication system for transmitting and receiving Digital Visual Interface (DVI) communication data signals and Display Data Channel (DDC) communication signals over a transmission line comprises an open-loop equalizer circuit and a DDC extension circuit. The open-loop equalizer circuit is operable to receive DVI communication signals transmitted over the transmission line and output equalized DVI communication data signals. The DDC extension circuit is operable to inject a boost current at the receive end of the transmission line during a positive transition in the DDC communication signal, and clamp the receive end of the transmission line during a negative transition of the DDC communication signal.

Abstract: To make a decision circuit for RZ format optical signals at a very high data rate, the device (1?) comprises an electronic component (2) having a tunnel diode characteristic presenting a peak current (IP) and a valley current (IV). The device (1?) comprises a control current source (9) controlled by a control signal (VRESET) said current being injected into the component (2) and taking a first value or a second value. In response to an input optical signal (E), generator means (2) generate a current (IRZ) into the component (2). The valley current (IV) is of a value greater than the first current value and the peak current (IP) is of a value lying between a second current value (IR) and the sum of said second value plus the value (IRZ) of the current generated the generator means (2).

Abstract: Methods for implementing familiar electronic circuits at nanoscale sizes using molecular-junction-nanowire crossbars, and nanoscale electronic circuits produced by the methods. In one embodiment of the present invention, a 3-state inverter is implemented. In a second embodiment of the present invention, two 3-state inverter circuits are combined to produce a transparent latch. The 3-state inverter circuit and transparent-latch circuit can then be used as a basis for constructing additional circuitry, including master/slave flip-flops, a transparent latch with asynchronous preset, a transparent latch with asynchronous clear, and a master/slave flip-flop with asynchronous preset.

Abstract: An apparatus includes a quantizer circuit having a resonant tunneling device with an operational characteristic that includes a first region of unstable operation, and second and third regions of stable operation. An input terminal and an output terminal are each coupled to one end of the resonant tunneling device. A bias section is coupled to the resonant tunneling device, and responds to a clock signal by alternately operating in a first mode where the resonant tunneling device is forced to operate within the first region, and a second mode where the resonant tunneling device is permitted to operate in either of the second and third regions.

Abstract: Chemically assembled electronic nanotechnology (CAEN) provides an alternative to using Complementary Metal Oxide Semiconductor (CMOS) for constructing circuits with feature sizes in the tens of nanometers. A molecular latch and a method using the latch that enables it to act as a state holding device, perform voltage restoration, and to provide I/O isolation is disclosed.

Abstract: CMOS semiconductor pass-transistor logic circuitry (200) is disclosed, comprising pass transistor circuitry (204, 212, 218), and tunneling structure circuitry (228) coupled to the pass transistor circuitry; where the tunneling structure circuitry is adapted to hold a node (222) voltage stable by compensating a leakage current (302) originating from said pass transistor circuitry.

Abstract: CMOS semiconductor dynamic logic (300) is disclosed, comprising dynamic logic circuitry (302) and tunneling structure circuitry (328) coupled to the dynamic logic circuitry; where the tunneling structure circuitry is adapted to hold a node (308) voltage stable by compensating leakage current originating from said dynamic logic circuitry.

Abstract: CMOS semiconductor latch and register (500) circuitry is disclosed, comprising a first tunneling structure latch circuit (502); data input circuitry (506), coupled and adapted to pass data to (504) said first tunneling structure latch circuit (502), a second tunneling structure latch circuit (514), data transmission circuitry (516), coupled between said first and second tunneling structure latch circuits, and adapted to transfer data from said first tunneling structure latch circuit to said second tunneling structure latch circuit, and data output circuitry (518), coupled to (512) said second tunneling structure latch circuit (514).

Abstract: A high-speed, compact, edge-triggered flip-flop circuit is provided which includes an input circuit section, a latch circuit section and an output circuit section. The input circuit section includes at least one transistor such as a field-effect transistor (FET) which determines the logic function of the flip-flop such as D, S-R, or T, and provides a first stage of latching. The input circuit section receives the logic control signals such as D, S-R, or T, and a clock signal. In one embodiment of the invention, the latch circuit section includes two series-connected negative differential resistance (NDR) diodes. In this embodiment, a common terminal of the two NDR diodes is connected to the data output of the input circuit section and to the data input of the output circuit section.

Abstract: The present invention includes: a series circuit which has a negative differential resistance element and another negative differential resistance element that has a control terminal capable of controlling a value of an element current; a transfer gate; a latch circuit which has negative differential resistance elements connected in series; and an inverter circuit which has an FET as a drive element and a negative differential resistance element as a load element. With this, such a flip-flop can be obtained that when a clock signal is applied to a power supply terminal of the series circuit and a control terminal of the transfer gate and an input signal is supplied to the control terminal of the negative differential resistance element, an output is placed at a terminal.

Abstract: A circuit includes at least one negative differential resistance (NDR) device and at least one magnetic device having reversibly variable resistance, wherein the negative differential resistance device and the magnetic device are operatively connected so that changing the resistance of the magnetic device changes the current-voltage response characteristics of the circuit. NDR devices and magnetic devices can be arranged to form multiple value logic (MVL) cells and monostable-bistable transition logic elements (MOBILE), and these logic cells can form the components of a field programmable gate array.

Abstract: A system for storing digital data includes an input circuit, a clock circuit, and a bridge. The input circuit is coupled to receive an input signal. The clock circuit receives and transmits a clock signal. The bridge stores the digital data and includes a plurality of negative differential resistance devices. The bridge connects to the input circuit and the clock circuit.

Abstract: Circuit designs of basic digital logic gates are disclosed using Resonant Tunneling Diodes (RTDs) and MOSFETs, which reduces the number of devices used for logic design, while exploiting the high speed negative differential resistance (NDR) characteristics of RTDs. Such logic circuits include NAND, NOR, AND, and OR gates and Minority/Majority circuits, which are used in full adder circuits. By implementing RTDs along with conventional MOSFETs, the use of series connected MOSFETs, which results in low output rise and fall times, especially for a large number of inputs, can be avoided. Furthermore, the RTD logic design styles do not require the use of resistors or any elaborate clocking or resetting scheme.

Abstract: A high speed digital static shift register includes a series-connected pair of resonant tunneling diodes (RTDs) 22, 24 to achieve a bistable operating state. A clocked switch 20 provides the means of setting the binary state of this bistable pair. In order for one bistable pair to drive a following pair, a method of providing isolation and gain using a buffer amplifier 26 between the two pairs of RTDs is also provided. In one embodiment, the buffer amplifier comprises enhancement FET 30 and depletion load FET 28.

Abstract: A digital logic gate circuit including a logic block, clock transistor, bias transistor and a negative differential resistance (NDR) diode which acts as an active load for the circuit. The logic block, comprising a plurality of field effect transistors whose control terminals receive the set of input signals to the logic gate, determines the gate function such as inversion, NAND, NOR, MAJORITY, etc. The clock transistor is connected in series with the logic block and the bias transistor is connected in parallel across this series combination. The terminal of the NDR diode affixed to the common terminal of the bias transistor and the logic block forms the output for the logic circuit. NDR diodes include but are not limited to devices such as tunnel diodes and resonant tunneling diodes (RTDs). The folded I-V characteristic of an NDR diode allows the circuits to operate in a bistable clocked mode, where the circuit output latches its state and changes only when the clock signal is active.

Abstract: Resonant-tunneling transmission lines in the various architectures rely on discrete or continuous resonant-tunneling heterostructures to actively modify propagating logic signals. One embodiment utilizes amplification of logic signals to counteract ubiquitous losses and distortion associated with any transmission medium. Basically, the logic signal is incrementally reamplified and reshaped as it propagates along the transmission line. Another embodiment is directed to a clocking system that transmits a signal represented by a sinusoid. Then, in proximity to the logic gates or modules, the sinusoid is converted into a square wave that actually clocks the gates and other logic structures. The inventive active transmission line naturally performs this feature, thus enabling clock signal transmission over longer links coupled with sinusoid-to-square wave conversion in a limited area. Still other embodiments implement step or continuous variations in the physical width of the resonant-tunneling transmission line.

Abstract: Negative-resistance resonant tunnel diodes (RTDs) perform a complete set of logic functions with a single basic configuration. Inputs feed through Schottky diodes to a transfer RTD coupled to a clocked latch having two RTDs in series. Cascaded gates are driven synchronously by multiple clock phases or by asynchronous event signals. An XOR configuration also provides logical inversion.

Abstract: Multiple resonant tunneling devices offer significant advantages for realizing ultra-dense, ultra-high performance multivalued logic arithmetic integrated circuits. A multivalued logic adder is disclosed, wherein two numbers represented by positive digit base-M range-N words are added by two-input summation circuits 40 which sum corresponding digits, then the digit sums are decomposed into a binary representation by range-7 multivalued to binary converter circuits 42, then three-input summation circuits 44 sum appropriate bits of the binary representations to calculate the digits of a positive digit base-2 range-4 word whose value is the sum of the two numbers. Preferably, the decomposition to binary representation is performed by multi-valued folding circuits 56 which are connected by voltage divider circuitry. Preferably, the multi-valued folding circuits contain multiple-peak resonant tunneling transistors 54. Ripple carries are eliminated and the speed of the adder is independent of input word width.

Abstract: A multiple-valued logic circuit includes a first device, a second device, a signal source, and a signal output terminal. The second device is connected in series with the first device. The signal source supplies an oscillating voltage across a series circuit consisting of the first device and the second device. The first device is constituted by at least one unit device having first and second main terminals and exhibiting voltage-current characteristics including negative differential resistance characteristics for obtaining a peak current between the first and second main terminals. The second device is constituted by at least two series-connected unit devices each having first and second main terminals and exhibiting voltage-current characteristics including variable negative differential resistance characteristics for obtaining a peak current changing between the first and second main terminals.

Abstract: A multiple-valued literal circuit is implemented with resonant tunneling diodes (RTD). A number of RTD sections are connected in series with a current source. Current is tapped by a current bleeder between every two adjacent RTD sections. The current bleeders are turned on at different levels of input voltage, which is applied at the joint between the current source and the RTD sections. When the voltage reaches a certain threshold level, the current bleeder with the highest threshold voltage is turned on and taps the most current from the current source, depleting the current from other current bleeders with lower threshold voltages. Thus only one dominant current is tapped from the current source. The literal circuit can be used for multiple-valued decoders, multiplexers, demultiplexers and other multiple-valued digital systems.

Abstract: Negative-resistance resonant tunnel diodes (RTDs) perform a complete set of logic functions with a single basic configuration. Inputs feed through Schottky diodes to a transfer RTD coupled to a clocked latch having two RTDs in series. Cascaded gates are driven synchronously by multiple clock phases or by asynchronous event signals. An XOR configuration also provides logical inversion.

Abstract: Multiple resonant tunneling devices offer significant advantages for realizing circuits which efficiently convert values represented by multivalued number systems to conventional binary representation. In one form of the invention, a number represented by a range-4 base-2 word is converted into a conventional binary word (range-2 base-2) having the same value. The conversion is accomplished by a series of decomposition stages 53, each decomposition stage 53 producing an interim range-4 base-2 word and a binary digit, which becomes one of the digits of the binary output word. Preferably, the decomposition at each stage is accomplished by a set of range-4 base-2 to binary converters 50, each of which operates on a single digit of the interim word. Preferably, summation circuits 52 sum outputs of adjoining range-4 base-2 converters 50 to form the new interim word. The least significant digit of the output of the decomposition stage becomes a digit of the output binary word.

Abstract: A digital communication system for transmitting and receiving Digital Visual Interface (DVI) communication data signals and Display Data Channel (DDC) communication signals over a transmission line comprises an open-loop equalizer circuit and a DDC extension circuit. The open-loop equalizer circuit is operable to receive DVI communication signals transmitted over the transmission line and output equalized DVI communication data signals. The DDC extension circuit is operable to inject a boost current at the receive end of the transmission line during a positive transition in the DDC communication signal, and clamp the receive end of the transmission line during a negative transition of the DDC communication signal.