Abstract: A low-power, high-performance source-synchronous chip interface which provides rapid turn-on and facilitates high signaling rates between a transmitter and a receiver located on different chips is described in various embodiments. Some embodiments of the chip interface include, among others: a segmented “fast turn-on” bias circuit to reduce power supply ringing during the rapid power-on process; current mode logic clock buffers in a clock path of the chip interface to further reduce the effect of power supply ringing; a multiplying injection-locked oscillator (MILO) clock generator to generate higher frequency clock signals from a reference clock; a digitally controlled delay line which can be inserted in the clock path to mitigate deterministic jitter caused by the MILO clock generator; and circuits for periodically re-evaluating whether it is safe to retime transmit data signals in the reference clock domain directly with the faster clock signals.

Abstract: Field-effect transistor (FET) stack voltage compensation. In some embodiments, a switching device can include a first terminal and a second terminal, and a plurality of switching elements connected in series between the first and terminal and the second terminal. Each switching element has a parameter that is configured to yield a desired voltage drop profile among the connected switching elements. Such a desired voltage drop profile can be achieved by some or all FETs in a stack having variable dimensions such as variable gate width or variable numbers of fingers associated with the gates.

Abstract: An isolator circuit capable of two-way electrical disconnection and a semiconductor device including the isolator circuit are provided. A data holding portion is provided in an isolator circuit without the need for additional provision of a data holding portion outside the isolator circuit, and data which is to be input to a logic circuit that is in an off state at this moment is stored in the data holding portion. The data holding portion may be formed using a transistor with small off-state current and a buffer. The buffer can include an inverter circuit and a clocked inverter circuit.

Abstract: A packaged PLD solution includes a first die having a masked-Read Only Memory (ROM) that is programmed during its fabrication to store configuration data, and includes a second die having a PLD including a number of configurable resources collectively configured to implement a circuit design embodied by the configuration data. The first die is electrically connected to the second die, and both the first die and second die are stacked and encapsulated together to form the packaged PLD solution. The configuration data is programmed into the masked-ROM by a manufacturer of both the masked-ROM and the PLD.

Abstract: The present invention is a technique for dynamic element matching used in digital-to-analog converters (DAC's). An analog-to-digital converter (ADC) converts an analog signal into a digital code. A current-mode randomizer randomizes the digital code based on a control word provided by a pseudo random number generator. A digital-to-analog converter (DAC) converts the randomized digital code into an analog signal.

Abstract: Architecture for a programmable logic device is described which can operate at substantially faster clock rates than present programmable logic devices. The PLD uses BiCMOS circuit elements to make use of the speed advantages of bipolar technology while also enjoying the limited power consumption of CMOS technology.

Abstract: An integrated circuit includes a bipolar logic stage and a CMOS logic stage. The bipolar logic stage includes a common emitter line positioned along a central axis, and a set of bipolar signal drive blocks arranged along the central axis. Each of the bipolar signal drive blocks includes a bipolar transistor with an emitter connected to the common emitter line. Each of the bipolar signal drive blocks further includes an emitter-base reverse voltage protection device. The CMOS logic stage includes a plurality of CMOS logic blocks connected to the set of bipolar signal drive blocks. The CMOS logic blocks are arranged in a compact configuration that is substantially perpendicular to the central axis. The CMOS logic stage performs logical operations on a set of input signals to generate a set of intermediate signals that are driven by the set of bipolar signal drive blocks onto the common emitter line.

Abstract: A first subset of components of a first set of pairs of complementary differential electrical signals representative of a numerical value expressed in a multi-bit thermometer code, is processed in accordance with a first set of Boolean functions to produce a first set of output electrical signal components , and a second subset of components of the first set of pairs of complementary differential electrical signals is processed in accordance with a second set of Boolean functions to produce a second set of output electrical signal components. The first and second subsets and the first and second sets of Boolean functions are such that the first and second sets of output electrical signal components when combined form a second set of pairs of complementary differential electrical signals representative of the same numerical value expressed in a second multi-bit code with fewer bits than the multi-bit thermometer code.

Abstract: A semiconductor integrated circuit device such as a memory device with logic function comprises a plurality of RAM macrocells and gate arrays. The RAM macrocells are constituted by bipolar CMOS RAMs having a total memory capacity of at least 100 kilobits, and the gate arrays contain at least 4000 gates. The logic circuits in the memory device with logic function or the like are constructed by selectively combining CMOS, bipolar CMOS or ECL gate circuits depending on the output load capacity, transmission characteristic requirement, power dissipation and required layout area. The level of signals at various circuits is set to the ECL level or MOS level depending on the local circuit configuration and other factors. The memory device further incorporates sequence control circuits required to be installed downstream of buffer storages of computers.