Abstract: Circuitry for controlling current between a load and a power supply, the circuitry comprising: an output stage comprising: an input node configured to be coupled to the power supply; and an output node configured to be coupled to the load; and one or more control nodes for controlling a conduction path between the input node and the output node; and protection circuitry coupled to the one or more control nodes, the protection circuitry configured to break the conduction path between the input node and the output node when a load voltage at the output node exceeds a supply voltage at the input node, wherein the protection circuitry comprises: an active protection circuit configured to break the conduction path when the supply voltage exceeds an operational threshold of the active protection circuit; and a passive protection circuit configured to break the conduction path when the supply voltage is below an operation threshold of the active protection circuit.

Abstract: Methods, systems, and circuities for selectively connecting an RF signal to front end circuitry and selectively attenuating the RF signal are disclosed. In one example, an interface circuitry includes switching circuitry and attenuator circuitry. The switching circuitry is connected in series between an output of an amplifier and a front end circuitry configured to transmit a radio frequency (RF) signal output by the amplifier. The switching circuitry connects the output of the amplifier to a selected one or more front end circuitry inputs to create one or more signal paths. The attenuator circuitry is connected between the output of the amplifier and ground to create an attenuation path in a shunt configuration relative to the one or more signal paths. The attenuator circuitry is configured to attenuate the RF signal.

Abstract: A system may include a charge pump configured to operate in a plurality of modes including a first mode in which the ratio of an output voltage to an input voltage of the charge pump is a first ratio and a second mode in which the ratio is a second ratio and a controller configured to limit current flowing between a power source of the charge pump to the charge pump, wherein the power source provides the input voltage, by limiting a transfer of charge between the power source and the charge pump during a switching cycle of the charge pump responsive to a change in operation between modes of the plurality of modes.

Abstract: A method for enhancing linearity of the receiver front-end system includes receiving a radio frequency signal by an antenna, converting the radio frequency signal to first differential signals by a transformer module, adjusting frequencies of the first differential signals to generate second differential signals by a mixer module, detecting a common signal in order to reduce a common error of the second differential signals, and generating third differential signals according to a reference signal after the common error is reduced from the second differential signals. The first differential signals, the second differential signals, and the third differential signals are unbalanced.

Abstract: A RF switch circuit includes a voltage divider circuit and a semiconductor device. The semiconductor device has an activated state and a deactivated state. The voltage divider circuit has an input terminal connected to a first line and an output terminal connected to a second line. The first line is connected to a power source. A gate terminal of the semiconductor device is connected to the second line. In the activated state, a source terminal and a drain terminal of the semiconductor device are each selectively connected to ground. In the deactivated state, the source terminal and the drain terminal of the semiconductor device are each selectively connected to the power source.

Abstract: The embodiments of the present disclosure identify a target chip from among multiple chips coupled to a shared bus and customize an optimization parameter for the particular chip. Stated differently, in a communication system where only one chip (or a subset of chips) on a shared bus is the intended target, the system can customize an optimization parameter for the specific location of the target chip on the bus. As new data is received that is intended for a different chip—i.e., the target chip changes—the system can dynamically change the parameter based on the location of the new target chip on the bus.

Abstract: This electrostatic protection circuit enables a trigger voltage to be set arbitrarily and enables a high hold voltage to be set, without providing an RC timer having a large circuit area. This electrostatic protection circuit is connected to a first terminal via a first node and is connected to a second terminal via a second node. The electrostatic protection circuit is provided with a plurality of circuit blocks that are connected in series between the first node and the second node, and at least one circuit block out of the plurality of circuit blocks includes a zener diode for setting a trigger voltage. The electrostatic protection circuit enters a conduction state when the potential of the first node becomes higher than the potential of the second node and the voltage between both ends of the circuit block including the zener diode reaches the breakdown voltage of the zener diode.

Abstract: Embodiments of an electrostatic discharge (ESD) protection device and a method of operating an ESD protection device are described. In one embodiment, an ESD protection device includes an NMOS transistor configured to shunt current in response to an ESD pulse and a bigFET connected in parallel with the NMOS transistor. The NMOS transistor includes a source terminal, a gate terminal, and a body. The gate terminal and the body of the NMOS transistor are connected to the source terminal via a resistor. Other embodiments are also described.

Abstract: A ringing suppression circuit, which is connected to a transmission line for transmitting a differential signal changeable between a high level and a low level in a binary level through a pair of a high potential side signal line and a low potential side signal line, and suppresses ringing that occurs in association with transmission of the differential signal, includes: an inter-line switching element that is connected to the pair of the high potential side signal line and the low potential side signal line; and a control unit that turns on the inter-line switching element and fixes an on state when detecting that the differential signal changes from the high level to the low level, and releases the on state after a predetermined time is measured and elapsed.

Abstract: A circuit is provided for ringing suppression. The circuit comprises a termination resistor coupled to a bus via a switch; and a control circuit. The control circuit comprises an input coupled to a data input pin of a bus transceiver and an output coupled to control the termination resistor. The circuit is configured to selectively couple the resistor to the bus in response to a transition on the input bit stream.

Abstract: When a signal of high amplitude is outputted, a drain-to-source voltage exceeding a withstand voltage may be applied. The semiconductor device according to the present invention includes a level shift circuit that outputs a high amplitude signal from the input of a low amplitude logical signal. The level shift circuit includes a series coupling circuit, a first gate control circuit coupled to a first power supply, a second gate control circuit coupled to a second power supply of a potential higher than the potential of the first power supply, and a potential conversion circuit arranged between the first gate control circuit and the series coupling circuit. The potential conversion circuit supplies a first level potential, which is lower than the potential of the first power supply and higher than the potential of the reference power supply, to a gate of an N-channel MOS transistor of the series coupling circuit.

Abstract: A switching element driving circuit includes a charge pump circuit and a drive voltage generating circuit. The charge pump circuit generates a boosted voltage. The drive voltage generating circuit generates a drive voltage for driving a switching element from the boosted voltage. The drive voltage generating circuit applies a current to a control terminal of the switching element through a resistor at least in an initial stage and an end stage of an output period during which a signal instructing the switching element to be turned on is outputted, and alleviates a rising and a falling of the drive voltage. A switching frequency of the charge pump circuit is set from 2 MHz to 30 MHz. As a result, generation of radio noise can be restricted in both of the drive voltage generating circuit and the charge pump circuit.

Abstract: One embodiment described is an apparatus that includes an active device structured in a semiconductor body. The semiconductor body may include a gate terminal to receive a switched bias signal, and a bulk terminal to receive a forward body-bias signal. A first circuit portion may be coupled to the gate terminal to provide the switched bias signal, and a second circuit portion may be coupled to the bulk terminal to provide the forward body-bias signal.

Abstract: An electrostatic discharge (ESD) protection circuit includes an electrostatic discharge bus, first and second resistors coupled in series, first and second capacitors coupled in series, and first and second transistors. The first resistor is coupled to the electrostatic discharge bus. The first capacitor is coupled to the second resistor. The first transistor has a control input that is coupled between the first and the second resistors. The second transistor has a control input that is coupled between the first and the second capacitors.

Abstract: A semiconductor apparatus that includes: a first high-voltage transistor having a gate and a first electrode, wherein the first electrode is connected to a first pad and a parasitic capacitance forms between the gate and the first electrode; and a clamping circuit that is connected to the gate of the first high-voltage transistor, wherein the clamping circuit detects a change in a level of a gate voltage of the first high-voltage transistor due to electrostatic discharge, and clamps the gate voltage of the first high-voltage transistor according to a result of the detection.

Abstract: A display apparatus and a control method thereof are disclosed. The display apparatus includes a signal processor which processes a video signal; a display which displays an image based on the video signal processed by the signal processor, a light source providing light for displaying the image; and a driving circuit which drives the light source on the basis of a dimming signal having an on-section and an off-section for dimming the light source. The driving circuit includes a protection circuit for performing a protection operation as a result of an abnormal electric current flowing in the light source during the off-section. The display apparatus is protected when a short circuit occurs between the light source and the driving circuit, thereby enhancing the stability and reliability of the apparatus.

Abstract: The semiconductor device includes a driver circuit including a first thin film transistor and a pixel including a second thin film transistor over one substrate. The first thin film transistor includes a first gate electrode layer, a gate insulating layer, a first oxide semiconductor layer, a first oxide conductive layer, a second oxide conductive layer, an oxide insulating layer which is in contact with part of the first oxide semiconductor layer and which is in contact with peripheries and side surfaces of the first and second oxide conductive layers, a first source electrode layer, and a first drain electrode layer. The second thin film transistor includes a second gate electrode layer, a second oxide semiconductor layer, and a second source electrode layer and a second drain electrode layer each formed using a light-transmitting material.

Abstract: A circuit apparatus for recognizing an earphone in a mobile terminal is provided. The apparatus includes a plurality of devices, a wiring for recognizing the number of poles of the earphone, and a comparator. The plurality of devices are connected between a microphone bias power and a wiring that receives a signal from a microphone of an earphone. The wiring that recognizes the number of poles of the earphone branches from a wiring between at least two of the devices. The comparator compares a voltage of the wiring that recognizes the number of poles with a reference voltage to output a result signal.

Abstract: A reference voltage is maintained stable against disturbance noise and self-noise of an internal circuit. A reference voltage stabilizer circuit for stabilizing the reference voltage to be supplied through at least one of first or second signal lines includes a preceding-stage circuit including a capacitive path connected between the first and second signal lines; and a subsequent-stage circuit including a resistive path connected between the first and second signal lines, and a resistive circuit inserted, between the capacitive path and the resistive path, into one of the first or second signal lines through which the reference voltage is supplied.

Abstract: Various active diode circuits are described. In one example, there is provided an active diode circuit having an active diode and a control circuit. The active diode includes an anode terminal, a cathode terminal and a control terminal. The control circuit is configured to generate a control current of the active diode on the control terminal proportional to the diode current of the active diode. The control circuit is also configured to control the diode voltage of the active diode below a predetermined threshold.

Abstract: There is provided a high frequency switch including: a first signal transferring unit including a plurality of first switching devices; a second signal transferring unit including a plurality of second switching devices; a first shunting unit including a plurality of third switching devices; and a second shunting unit including a plurality of fourth switching devices.

Abstract: Disclosed is a noise current compensation circuit. The circuit is provided with two input and output terminals A and B, and two control terminals CON and CONF. The control terminals control a work mode (work state and pre-charge state) of the compensation circuit. The compensation circuit consists of 7 PMOS transistors and 8 NMOS transistors. In the normal work state, by detecting changes of potential change rate of two signal lines in an original circuit, the noise current compensation circuit automatically enables one end of the original circuit that discharges slowly to discharge a signal more slowly, and enables one end of the original circuit that discharges rapidly to discharge a signal more rapidly, thus eliminating the influence of the noise current on the circuit and providing assistance for correct identification of subsequent circuit signals.

Abstract: A fast response time, self-activating, adjustable threshold limiter including a limiting element LE, a first coupling element CE1 electrically connected from a signal node of LE to a control input of LE, and a second coupling element CE2 electrically connected from the control input of LE to a nominal node of LE. An initial bias (control) voltage is also supplied to the control input of LE to dynamically control the limiting threshold for the limiter.

Abstract: Disclosed is a noise current compensation circuit. The circuit is provided with two input and output terminals A and B, and two control terminals CON and CONF. The control terminals control a work mode (work state and pre-charge state) of the compensation circuit. The compensation circuit consists of 7 PMOS transistors and 8 NMOS transistors. In the normal work state, by detecting changes of potential change rate of two signal lines in an original circuit, the noise current compensation circuit automatically enables one end of the original circuit that discharges slowly to discharge a signal more slowly, and enables one end of the original circuit that discharges rapidly to discharge a signal more rapidly, thus eliminating the influence of the noise current on the circuit and providing assistance for correct identification of subsequent circuit signals.

Abstract: In a driver, a charging module electrically charges the on-off control terminal of the switching element for turning on the switching element, and a limiting module performs a task of limiting a voltage at the on-off control terminal of the switching element by a predetermined voltage to thereby limit an increase of a current flowing between the input and output terminals of the switching element. A determining module determines whether the voltage at the on-off control terminal of the switching element deviates from the predetermined voltage while the limiting module is performing the limiting task. A correcting module corrects the voltage at the on-off control terminal of the switching element to be close to the predetermined voltage when it is determined that the voltage at the on-off control terminal of the switching element deviates from the predetermined voltage.

Abstract: A noise resistant switch control circuit is provided. The circuit includes a low pass filter configured to couple to a first terminal of a switch and a first voltage clamp coupled to the low pass filter. The first voltage clamp is configured to couple to a control terminal of the switch and limit a voltage of the control terminal relative to the first terminal to within a first clamping range. The circuit includes a second voltage clamp coupled to an input terminal of the switch control circuit. The second voltage clamp is configured to couple to the control terminal of the switch. The second voltage clamp is further configured to reduce a level of a control voltage coupled to the second voltage clamp. The circuit includes a bias device configured to couple to the control terminal of the switch and to impress a biasing voltage to the control terminal.

Abstract: There is provided a high frequency switch including: a first signal transferring unit including a plurality of first switching devices; a second signal transferring unit including a plurality of second switching devices; a first shunting unit including a plurality of third switching devices; and a second shunting unit including a plurality of fourth switching devices.

Abstract: A method for reducing an off-current of a field effect transistor in which two electrodes of the field effect transistor have fixed voltage values and the rest electrode has an alternating voltage value by an AC voltage pulse generator to form an off-stress near source and drain junctions in turn.

Abstract: A slicer includes a first latch. The first latch includes an evaluating transistor configured to receive a first clock signal. The first latch further includes a developing transistor configured to receive a second clock signal, wherein the first clock signal is different from the second clock signal. The first latch further includes a first input transistor configured to receive a first input. The first latch further includes a second input transistor configured to receive a second input, wherein the first and second input transistors are connected with the developing transistor. The first latch further includes at least one pre-charging transistor configured to receive a third clock signal, wherein the at least one pre-charging transistor is connected to a first output node and a second output node. The slicer further includes a second latch connected to the first and second output nodes and to a third output node.

Abstract: A semiconductor device includes a power gating unit, a combinational logic unit and a clamping unit. The power gating unit is turned on to output an internal signal at an output electrode based on an input signal or turned off according to operation modes. The combinational logic unit includes an input electrode directly connected to the output electrode of the power gating unit through a data line, and generates an output signal based on the internal signal received through the data line. The clamping unit is turned on to clamp the internal signal at a logic high level or at a logic low level or turned off according to the operation modes. The semiconductor device clamps the output electrode of the power gating unit without degrading an operation speed of the semiconductor device.

Abstract: A level shifter is disclosed and includes at least four Type 1 transistors and at least four Type 2 transistors. The sources of several Type 1 transistors are electrically connected to a first voltage terminal while the sources of several Type 2 transistors are connected to a second voltage terminal. The level shifter receive an input signal and outputs a logically equivalent output signal with higher voltage, wherein the voltage of the output signal is between the voltages of the first voltage terminal and the second voltage terminal.

Abstract: An output circuit includes a first transistor coupled to an external terminal and having a gate terminal that receives a first drive signal. The first transistor pulls down a potential at the external terminal when activated in accordance with the first drive signal. The output circuit also includes a capacitor. The capacitor includes a first end coupled to the gate terminal of the first transistor. A clamp circuit, coupled to a second end of the capacitor, clamps the second end of the capacitor to a potential corresponding to the operation of the first transistor. The first transistor includes a drain terminal that is not coupled to the capacitor but is coupled to the external terminal.

Abstract: An output stage (1-2) includes a gain circuit (Q1,Q2) for driving a base of a main transistor (Q3) having a collector coupled to an output (18) in response to an input signal V11) which also controls a base of an auxiliary transistor (Q7) having a collector coupled to the output. A clamping transistor (Q6) has a control electrode coupled to the base of the auxiliary transistor, a first electrode coupled to the output, and a second electrode coupled to provide feedback from the output via the gain circuit to the base of the main transistor and to provide feedback from the output to the base of the auxiliary transistor. When the auxiliary transistor goes into deep saturation it causes the clamping transistor to provide negative feedback from the output to the main output stage so as to prevent the main transistor from going into deep saturation.

Abstract: A bootstrap circuit includes an input terminal, an inverting input terminal, an output terminal, an inverting output terminal, a first sub-bootstrap circuit, a second sub-bootstrap circuit, and a charging path providing circuit. The first sub-bootstrap circuit includes a first bootstrap capacitor, a first charging path, a first discharging path, and a first high voltage providing path. The charging path providing circuit includes a third charging path. In response to a high voltage level inputted into the input terminal, the first charging path and the third charging path are turned on, the first bootstrap capacitor is charged to a capacitor voltage, and the first discharging path is turned on to discharge the output terminal. In response to a low voltage level inputted into the input terminal, a first superimposed voltage including the high voltage level and the capacitor voltage is provided to the output terminal.

Abstract: A zero bias power detector comprising a zero bias diode and an output boost circuit is provided. The output boost circuit comprises a zero bias transistor. The zero bias diode is not biased but outputs a rectifying signal according to a wireless signal. The zero bias transistor, not biased but coupled to the zero bias diode, is used for enhancing the rectifying signal.

Abstract: An inter-line switching element formed of a MOSFET is provided between a pair of signal lines. When the level of a differential signal changes from high to low, a control circuit turns on the FET for a fixed period thereby to suppress ringing by decreasing the impedance between the signal lines when the level of the differential signal transitions, and causing the energy of the distortion of the differential signal waveform to be absorbed by the on-resistance of the FET.

Abstract: A comparator includes a first amplifier and a level holding part. The first amplifier includes differential-pair transistors and outputs a signal of a level corresponding to a comparison result from a first output node. The differential-pair transistors serve as a comparison part that receives a reference voltage, a signal level of which changes with a slope, at a gate of one of the differential-pair transistors, receives an input signal at a gate of the other of the differential-pair transistors, and compares the reference voltage with a potential of the input signal. The level holding part holds a level of the first output node such that the other transistor having an output part thereof connected to the first output node out of the differential-pair transistors of the first amplifier does not fall into a level at which a saturated operation condition is not satisfied.

Abstract: A device includes a first power supply line carrying a first positive power supply voltage, and a second power supply line carrying a second positive power supply voltage lower than the first positive power supply voltage. The device further includes a protection circuit having a MOS transistor. A diode is coupled to the MOS transistor. The source-to-drain path of the MOS transistor and the diode are serially coupled between the first and the second power supply lines. The diode is forward biased by the first and the second positive power supply voltages.

Abstract: A cascoded input-output device is provided configured to receive at an input node a lower voltage input signal and to generate at an output node a higher voltage output signal. The input-output device is split into two voltage domains to enable output signals in a larger range to be generated, while the components of the input-output device individually operate in a smaller range. By applying a selected bias voltage to a protected node of the cascoded input-output device, first changing that selected bias voltage in response to a transition of the input signal and then switching that selected bias voltage back when the output signal reaches a predetermined level, that node is protected, either avoiding stress-inducing voltage swings or providing a switching speed increasing charge boost.

Abstract: A method for reducing an off-current of a field effect transistor in which two electrodes of the field effect transistor have fixed voltage values and the rest electrode has an alternating voltage value by an AC voltage pulse generator to form an off-stress near source and drain junctions in turn.

Abstract: The limiter circuit of this invention is a limiter circuit which, by switching action of a pair of transistors, allows passage of only signal voltage components of an input signal voltage included in ranges of an upper limit signal voltage and a lower limit signal voltage. With this construction, the pair of transistors carry out comparisons between the input signal voltage and threshold signal voltages and line switching at the same time. Therefore, there is no influence of propagation delay speed, and no switching noise occurs at times of line switching. Since diodes are not used, a high-speed limiter circuit can be manufactured.

Abstract: Compensated current cell to scale switching glitches in digital to analog convertors. A compensated current cell is disclosed that includes first and second switching transistors configured to switch an input current between first and second outputs based on first and second input signals, respectively, a first compensation transistor connected to the first input signal to provide a first compensation current that is connected to the second output, and a second compensation transistor connected to the second input signal to provide a second compensation current that is connected to the first output, the first and second compensation transistors having source terminals that are connected together. In another aspect, switching glitches are scaled based on a size difference between the switching transistors and the compensation transistors.

Abstract: An inter-line switching element formed of a MOSFET is provided between a pair of signal lines. When the level of a differential signal changes from high to low, a control circuit turns on the FET for a fixed period thereby to suppress ringing by decreasing the impedance between the signal lines when the level of the differential signal transitions, and causing the energy of the distortion of the differential signal waveform to be absorbed by the on-resistance of the FET.

Abstract: A clamping circuit clamps a voltage received by an n-type semiconductor region without using a Schottky transistor. The clamping circuit includes a current mirror as well as first and second bipolar transistors. The current mirror receives a first current and supplies a second current in response. The first current is received by the first bipolar transistor, and the second current is received by the second bipolar transistor. The difference between the base-emitter junction voltages of the first and second bipolar transistors, in part, defines the voltage at which the n-type region is clamped. To start-up the circuit properly, current is withdrawn from the base/gate terminals of the transistors disposed in the current mirror. The circuit optionally includes a pair of cross-coupled transistors to reduce the output impedance and improve the power supply rejection ratio.

Abstract: A circuit adjustable after packaging includes a functional circuit supplied with a power potential and a reference potential and has at least one parameter adjustable by programming at least one programmable element and a circuit to program the programmable element of the functional circuit. The adjustable circuit also includes a limiter circuit to limit the voltage between the power supply potential and the reference potential to an adjustable limiting voltage, and a circuit to adjust the limiting voltage. After adjusting a parameter of the functional circuit, the limiting voltage of the limiter circuit is adjusted.

Abstract: Electrostatic discharge clamp devices are described. In one embodiment, the semiconductor device includes a first transistor, the first transistor including a first source/drain and a second source/drain, the first source/drain coupled to a first potential node, the second source/drain coupled to a second potential node. The device further includes a OR logic block, a first input of the OR logic block coupled to the first potential node through a capacitor, the first input of the OR logic block being coupled to the second potential node through a resistor, and a second input of the OR logic block coupled to a substrate pickup node of the first transistor.

Abstract: A low power method and apparatus for selecting operational modes of a circuit. One circuit according to the teachings of the disclosed method and apparatus includes a first current limiting circuit coupled between a selector terminal and a first voltage bus. The first current limiting circuit is adapted to vary a current limit out of the selector terminal in response to a voltage on the selector terminal. The circuit also includes a second current limiting circuit coupled between the selector terminal and a second voltage bus. The second current limiting circuit adapted to vary a current limit into the selector terminal in response to the voltage on the selector terminal.

Abstract: A semiconductor integrated circuit includes a core circuit, a power supply switch situated on a path providing a current to the core circuit and configured to control a state of current supply to the core circuit in response to a control signal applied to a control node, a clamp circuit configured to clamp a voltage of the control signal, and a switching circuit configured to control whether to enable or disable a clamp operation of the clamp circuit.

Abstract: A level shifter includes a level shifting circuit which receives input signal from a function block and changes the voltage level of the input signal, to output an output signal; a current blocking circuit, which suppresses current flowing to the level shifting circuit in an input suppression mode in which power supplied to the function block is cut and deactivates the level shifting circuit; and an output control circuit, which controls the output signal of the level shifting circuit to have a direct current (DC) voltage level in the input suppression mode.

Abstract: A cascoded input-output device is provided configured to receive at an input node a lower voltage input signal and to generate at an output node a higher voltage output signal. The input-output device is split into two voltage domains to enable output signals in a larger range to be generated, whilst the components of the input-output device individually operate in a smaller range. By applying a selected bias voltage to a protected node of the cascoded input-output device, first changing that selected bias voltage in response to a transition of the input signal and then switching that selected bias voltage back when the output signal reaches a predetermined level, that node is protected, either avoiding stress-inducing voltage swings or providing a switching speed increasing charge boost.