Abstract: A voltage switching circuit is provided which is constructed from a minimum number of transistors and prevents the threshold voltage margin from being lowered by causing high-voltage cutoff and supply voltage transfer functions heretofore performed by a single depletion transistor to be shared between two series-connected depletion transistors different in gate insulating film thickness or threshold voltage. Thus, without using enhancement transistors which involve an increase in pattern area a voltage switching circuit can be provided which is small in chip area, low in cost and high in yield and reliability and provides a stable operation with a low supply voltage which is impossible with one depletion transistor.

Abstract: A voltage switching circuit is disclosed which is constructed from a minimum number of transistors and prevents the threshold voltage margin from being lowered by causing high-voltage cutoff and supply voltage transfer functions heretofore performed by a single depletion transistor to be shared between two series-connected depletion transistors different in gate insulating film thickness or threshold voltage. Thus, without using enhancement transistors which involve an increase in pattern area a voltage switching circuit can be provided which is small in chip area, low in cost and high in yield and reliability and provides a stable operation with a low supply voltage which is impossible with one depletion transistor.

Abstract: A voltage switching circuit is disclosed which is constructed from a minimum number of transistors and prevents the threshold voltage margin from being lowered by causing high-voltage cutoff and supply voltage transfer functions heretofore performed by a single depletion transistor to be shared between two series-connected depletion transistors different in gate insulating film thickness or threshold voltage. Thus, without using enhancement transistors which involve an increase in pattern area a voltage switching circuit can be provided which is small in chip area, low in cost and high in yield and reliability and provides a stable operation with a low supply voltage which is impossible with one depletion transistor.

Abstract: A voltage switching circuit is disclosed which is constructed from a minimum number of transistors and prevents the threshold voltage margin from being lowered by causing high-voltage cutoff and supply voltage transfer functions heretofore performed by a single depletion transistor to be shared between two series-connected depletion transistors different in gate insulating film thickness or threshold voltage. Thus, without using enhancement transistors which involve an increase in pattern area a voltage switching circuit can be provided which is small in chip area, low in cost and high in yield and reliability and provides a stable operation with a low supply voltage which is impossible with one depletion transistor.

Abstract: A D flip-flop latches a reference clock signal in response to an output signal fed back from an output circuit. A pulse generating circuit generates a pulse in response to the output signal fedback from the output circuit. From the latched signal and the pulse generated by the pulse generating circuit, a count pulse is generated. The count pulse is output to an up/down counter. Based on the counting result of the up/down counter, a digital-to-analog conversion circuit generates a delay control signal. Using this delay control signal, the delay circuit synchronizes its output signal with the reference clock signal. It is possible to synchronize the output data signal with the reference clock signal regardless of variations in the reference clock signal, source voltage, and ambient temperature.

Abstract: A noise suppression circuit for a floating bus in a digital integrated circuit includes pull-up and pull-down feedback loops each connected to the floating bus. The pull-up feedback loop includes a PMOS device connected between a high logic level and the floating bus, with a NOR gate switching the PMOS device. The pull-down feedback loop includes an NMOS device connected between a low logic level and the floating bus, with a NAND gate switches the NMOS device. The NOR and NAND gates are configured such that one of their inputs is connected directly to the floating bus and the other input is connected to the floating bus through an inverter having a finite gate delay. Voltage transitions occurring on the floating bus due to noise injection drive the bus back to its original state before the finite gate delay of the inverter.