Abstract: Systems and methods related to single molecule switching devices are disclosed. One example method can include the step of applying a tunneling current across a tunneling junction. The tunneling junction can include an endohedral fullerene that includes a fullerene cage and a trapped cluster or a trapped atom. Such a method can also include exciting one or more internal motions of the trapped cluster or the trapped atom based at least in part on the tunneling current, and changing the conductance of the endohedral fullerene based at least in part on the one or more excited internal motions. One or more electronic processes can be controlled based at least in part on the changed conductance of the endohedral fullerene.

Abstract: Provided is a physical quantity sensor capable of improving physical quantity detection precision thereof. The physical quantity sensor includes a bridge resistance type physical quantity detection element for generating a voltage based on a bias current and a physical quantity, a current supply circuit for supplying the bias current to the physical quantity detection element, and a leakage current control circuit for causing leakage currents flowing when switches of the current supply circuit are in an off state to flow into a ground terminal.

Abstract: Provided is an SPDT switch having improved isolation characteristics in an RF band. The SPDT switch includes a serial switching unit, a current sink unit, a switching isolation unit, and a DC blocking unit. The serial switching unit includes first and second HBTs. The current sink unit sinks a current flowing from a common input terminal to each of first and second output terminals of the serial switching unit. The switching isolation unit causes an unselected output terminal of the first and second output terminals to be electrically isolated from the common input terminal when the serial switching unit operates. The DC blocking unit blocks a DC between the first HBT and the first output terminal and a DC between the second HBT and the second output terminal. Accordingly, it is possible to provide better insertion-loss and isolation characteristics in higher frequency bands than typical switches.

Abstract: An integrated circuit includes a first switched capacitor element and a second switched capacitor element, which are coupled to form a bridge circuit, the first switched capacitor element being located in a first branch of the bridge circuit and the second switched capacitor element being located in a second branch of the bridge circuit. A detector circuit is coupled to the first branch and to the second branch of the bridge circuit. Switching signals of the first switched capacitor element and of the second switched capacitor element are generated on the basis of an input clock signal of the integrated circuit.

Abstract: A System for generating a PWM output voltage signal include a first half bridge having a first set of switches, and a second half bridge having a second set of switches. A control unit is configured to generate a first PWM switch-signal for switching the first set of switches; to generate a second PWM switch-signal for switching the second set of switches; and to vary at least one of pulse widths and phases of the first and second PWM switch-signals relative to each other for varying a pulse width of a PWM output voltage signal so that the PWM output voltage signal equals zero when the pulse widths of the first and second PWM switch-signals are equal to each other.

Abstract: A circuit for preventing shoot-through in a high side switching transistor coupled in series with a low side switching transistor across a supply voltage, the circuit comprising a voltage reference circuit having an output providing a reference voltage which is negative with respect to the supply voltage provided to the high side switching transistor, the reference voltage being applied to the control electrode of the high side switching transistor when the high side switching transistor is off and the source of the high side switching transistor exceeds the reference voltage and the low side switching transistor is on.

Abstract: A switchable voltage follower and a bridge driver that utilizes the voltage follower. The voltage follower has an output transistor pair, three switching devices and an operational amplifier. Each of the switching devices is controlled by a polarity terminal for switching the circuit to be a pull-up voltage follower or a pull-down voltage follower. The bridge driver is formed by two switchable voltage followers to provide a bridge push-pull driving capability by driving the two switchable voltage followers alternately.

Abstract: An active damping circuit damps the ringing effect caused by a write circuit for a disk drive. The circuit includes upper switches and lower switched current sources. A capacitive feedback is connected between the output and the lower switched current sources.

Abstract: A driving circuit has first and second output terminals for connection with a load, for supplying the load with a constant voltage changing in polarity at predetermined timing, through the output terminals. A bridge circuit has first and second output nodes connected, respectively, to the first and second output terminals. A selector circuit selectively drives a plurality of current changeover switching elements of the bridge circuit. First and second differential amplifier circuits have first input terminals supplied with a predetermined reference voltage and second input terminals connected, respectively, to the first and second output nodes, and a common output terminal. A switching circuit selectively connects the first and second differential amplifier circuits to a power source in response to selective driving of the current changeover switching elements by the selector circuit.