Abstract: A rectenna is used for full-wave rectification of infrared radiation to produce electricity. In the rectenna, a metallic grating overlies a semiconductor body. A tunnel barrier is interposed between each grating element and the semiconductor body. Each of the grating elements overlies a bridge pair consisting of a region of n+-doped semiconductor and a region of p+-doped semiconductor, both of which are embedded in more lightly doped host semiconductor material. Each of the two regions that compose the bridge pair forms a rectifying tunnel junction through a tunnel barrier to at least one overlying grating element. Each of the two regions also forms a semiconductor junction with the host semiconductor material.

Abstract: A current generating circuit includes a first circuit subunit, a second circuit subunit and a third circuit subunit. The first circuit subunit is configured to generate a first current having a first temperature coefficient. The first temperature coefficient is a negative temperature coefficient. The second circuit subunit is configured to generate a second current having a second temperature coefficient. The second temperature coefficient is a positive temperature coefficient. The third circuit subunit is configured to generate a third current having a third temperature coefficient according to a difference between the first current and the second current. An absolute value of a slope of the third temperature coefficient is greater than that of the first temperature coefficient or that of the second temperature coefficient.

Abstract: In accordance with an embodiment, a method of operating a switched-mode power supply includes turning on a semiconductor switch coupled to a primary winding of a transformer for a first time period of a first cycle, turning off the semiconductor switch for a second time period of the first cycle, detecting a change in slew rate of a voltage at an output node of the semiconductor switch, determining a switch turn-on time based on detecting the change in the slew rate, and turning on the semiconductor switch at the determined switch turn-on time for a first time period of a second cycle.

Abstract: A thin film transistor (TFT) that includes a control electrode, a semiconductor pattern, a first input electrode, a second input electrode, and an output electrode is disclosed. in one aspect, the semiconductor pattern includes a first input area, a second input area, a channel area, and an output area. The channel area is formed between the first input area and the output area and overlapped with the control electrode to be insulated from the control electrode. The second input area is formed between the first input area and the channel area and doped with a doping concentration different from a doping concentration of the first input areas. The second input electrode makes contact with the second input area and receives a control voltage to control a threshold voltage.

Abstract: Thin film transistors having a high current drive capability and a suitable threshold voltage are provided. The thin film transistor includes a gate electrode, an insulating layer formed on the gate electrode, a semiconductor layer formed on the insulating layer, and source/drain electrodes formed on the semiconductor layer. The semiconductor layer includes a plurality of regions separated from each other in a longitudinal direction of the source/drain electrodes.

Abstract: An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

Abstract: A waveform shaping circuit enhances a rise of a waveform of a voltage applied to a load and includes an input unit to which the voltage is input; a supply unit configured to apply the voltage input from the input unit to the load; a first resistor connected in series between the input unit and the supply unit; a second resistor branch-connected to a portion between the input unit and the supply unit; and a stub connected to the first resistor or the second resistor and including a transmission path of a given length configured to shuttle the voltage by transmitting and reflecting the voltage as a voltage wave.

Abstract: An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

Abstract: Apparatus and methods of trimming resistors are disclosed. In one embodiment, a method of controlling the PCR of a thin film resistor is provided. The method includes applying a first current to a resistor so as to alter a property of the resistor, and measuring the property of the resistor. Applying the first current and measuring the property of the resistor can be repeated until the PCR of the resistor is within an acceptable tolerance of a desired value for the property of the resistor.

Abstract: This invention concerns interfacing to electronic circuits or systems operating at low temperature or ultra-low temperature using complementary metal-oxide semiconductor (CMOS) technology. Low temperature in this case refers to cryogenic temperatures in particular, but not exclusively, to the 4.2 K region. Ultra-low temperatures here refers to the sub-1 K range, usually accessed using dilution refrigerator systems. The electronic circuits comprise a controller (for writing and manipulation), an observer (for readout and measurement) circuits, or both, fabricated from ultra-thin silicon-on-insulator (SOI) CMOS technology.

Abstract: Disclosed is a method of controlling a High Electron Mobility Transistor (HEMT) through a cascode circuit, the cascode circuit including first and second switches, a capacitor connected to a source of the first switch, a source of the HEMT being connected to the drain of the first switch, and a controller for controlling the first and second switches. The method is achieved by defining state A, where the first switch is controlled to be OFF resulting in the HEMT being OFF and the second switch is controlled to be ON allowing the capacitor to be charged and stabilizing the drain voltage of the HEMT at around the HEMT gate threshold voltage. The method further defines state B, where the first switch is controlled to be ON resulting in the HEMT being ON and the second switch is controlled to be OFF almost all the time, thereby preserving the charge stored in the capacitor.

Abstract: A rectifier circuit is provided, which does not need a feedback function and prevents deterioration of a frequency characteristic, even if the rectifier circuit is configured with thin film transistors (TFTs). For example, the rectifier circuit is configured with an amplifier circuit, which compares an input signal with a voltage of a power source; a waveform shaping circuit for shaping a waveform of an output signal of the amplifier circuit; a resistor, which is connected to both an input terminal and output terminal; and a switching circuit, which is connected to both the output terminal and the power source, and is controlled by an output signal of the waveform shaping circuit. Then, either the input signal or the voltage of the power source is outputted in accordance with an operation of the switching circuit, so that the input signal is ideally rectified.

Abstract: An anti-fuse useful in implementing redundancy in a memory utilizes a normal transistor characteristic that is generally considered undesirable in order to provide two easily detected states. The un-programmed state, which is the high impedance state, is achieved simply with a normal transistor in its non-conductive state. The programmed state, which is the low impedance state, is achieved by forcing a normal transistor to conduct current through its gate. This causes the gate dielectric to become permanently conductive. This programmed transistor then is conductive between its source and drain that is easily differentiated from the transistor that is held in its non-conductive state. The result is a fuse technology using an anti-fuse that provides for easily distinguishable programmed and un-programmed states achieved by electrical programming rather than by laser programming.

Abstract: In a microcircuit device such as a memory chip, where a bank of state devices such as fuses and anti-fuses determines the enabling and disabling of redundant circuitry, a scheme for blowing one or more state devices by applying a programming voltage through a switching circuit comprising thin film transistors (TFTs) which are not damaged by the device blowing programming voltage. The TFTs can be activated by a low voltage enable signal provided by a state device designator logic module.

Abstract: A method for reducing the field dependence of an off-state current flow condition in a field-effect transistor having a source electrode, a drain electrode and a gate electrode, includes the steps of: applying a far off-state bias between the drain electrode and the gate electrode to drive a conduction channel in the field effect transistor into a far off-state; and applying a far off-state bias between the source electrode and the gate electrode to again drive the conduction channel into a far off-state; wherein both applying steps cause application of the far off-state bias for a sufficient time to reduce gate voltage dependency of off-state current flow in the conduction channel during a period when an off-state potential is applied to the gate electrode.

Abstract: In a microcircuit device such as a memory chip, where a bank of state devices such as fuses and anti-fuses determines the enabling and disabling of redundant circuitry, a scheme for blowing one or more state devices by applying a programming voltage through a switching circuit comprising thin film transistors (TFTs) which are not damaged by the device blowing, programming voltage. The TFTs can be activated by a low voltage enable signal provided by a state device designator logic module.

Abstract: In a microcircuit device such as a memory chip, where a bank of state devices such as fuses and anti-fuses determine the enabling and disabling of redundant circuitry, a scheme for blowing one or more state devices by applying a programing voltage through a switching circuit comprising thin film transistors (TFTs) which are not damaged by the device blowing, programming voltage. The TFTs can be activated by a low voltage enable signal provided by a state device designator logic module.

Abstract: A power driving circuit of a thin film transistor liquid crystal display includes Darlington circuits for generating voltages corresponding to the gate driving voltages required in the displays. Analog switching circuits control the application of voltages used to form the Von and Voff driving waveforms, which have driving voltage levels generated from the Darlington circuits. The phasing of the driving waveforms is controlled by a phasing signal which is received by the analog switching circuits. The power driving circuit of the present invention consumes less power than conventional driving circuits.

Abstract: In a microcircuit device such as a memory chip, where a bank of state devices such as fuses and anti-fuses determine the enabling and disabling of redundant circuitry, a scheme for blowing one or more state devices by applying a programming voltage through a switching circuit comprising thin film transistors (TFTs) which are not damaged by the device blowing, programming voltage. The TFTs can be activated by a low voltage enable signal provided by a state device designator logic module.

Abstract: Microelectronic semiconductor integrated circuit devices integrated on a common substrate with molecular electronic devices, having barrier-well-barrier structure with the well being conductive oligomer.

Abstract: An embodiment of the present invention describes a redundancy repair circuit fabricated in a Static Random Access Memory (SRAM) semiconductor device, with the redundancy repair circuit comprising: a plurality of thin film transistors (TFTs); a programming pad connecting to serially connected control gates of the plurality of TFTs; the plurality of TFTs having their individual source/drain terminals connecting between substitution logic and an address multiplexer.