Abstract: An Electro-Static Discharge (ESD) protection circuit includes a plurality of groups of p-type heavily doped semiconductor strips (p+ strips) and a plurality of groups of n-type heavily doped semiconductor strips (n+ strips) forming an array having a plurality of rows and columns. In each of the rows and the columns, the plurality of groups of p+ strips and the plurality of groups of n+ strips are allocated in an alternating layout. The ESD protection circuit further includes a plurality of gate stacks, each including a first edge aligned to an edge of a group in the plurality of groups of p+ strips, and a second edge aligned to an edge of a group in the plurality of groups of n+ strips.

Abstract: An apparatus includes an integrated circuit (IC). The IC includes a differencing comparator. The differencing comparator receives a differential input signal. The differencing comparator compares the differential input signal to a threshold value. The differencing comparator includes a transconductance circuit coupled to receive the differential input signal and to provide a differential output signal.

Abstract: Disclosed is a low voltage detection circuit. The low voltage detection circuit includes, a voltage comparison circuit, an output stage, an electric current circuit, and a judgment circuit. When the voltage comparison circuit detects that the voltage of the detection target is a predetermined voltage value or less, an output state of the output stage is promptly changed. When the voltage comparison circuit detects that the voltage of the detection target is a predetermined voltage value or more, the output state of the output stage is changed after a delay time obtained by the electric current circuit.

Abstract: A constant current source circuit includes one end connected to a second node as sources of third and fourth transistors, and the other end connected to a second power supply node that supplies a second voltage different from a first voltage. The clamp circuit is configured to form a current path between the second node and the second power supply node. It adjusts the potential of the second node to a certain potential when a first external input signal is switched from a first state to a second state.

Abstract: A comparator having first and second stages can provide component offset compensation and improved dynamic range. The first stage can receive first and second input signals and produce first and second output signals. The second stage can be coupled to the first stage to receive the first and second output signals at first and second input terminals of the second stage. The second stage can provide a voltage to the first and second terminals that differs from the supply voltage by less than a voltage of a diode drop. The comparator is operable to receive input voltages that reach the supply voltage.

Abstract: A method of monitoring supply voltage includes providing a single reference voltage, providing a single ratioed supply voltage, comparing the reference voltage to the ratioed supply voltage to provide an output signal, wherein the output signal comprises a first logic value in first and second operating conditions, and a second logic value in a third operating condition, wherein the first, second, and third operating conditions are determined by two crossing points of the reference voltage and ratioed supply voltage characteristics. The first and second operating conditions can represent undervoltage and overvoltage conditions, and the third operating condition can represent a normal operating condition. The reference voltage can be provided by a bandgap reference circuit.

Abstract: An integrated circuit including a high-voltage n-channel MOS power transistor, a high-voltage n-channel MOS blocking transistor, a high-voltage n-channel MOS reference transistor, and a voltage comparator, configured to provide an overcurrent signal if drain current through the power transistor in the on state exceeds a predetermined value. The power transistor source node is grounded. The blocking transistor drain node is connected to the power transistor drain node. The blocking transistor source node is coupled to the comparator non-inverting input. The reference transistor drain node is fed by a current source and is connected to the comparator inverting input. The reference transistor gate node is coupled to a gate node of the power transistor. The comparator output provides the overcurrent signal. A process of operating the integrated circuit is disclosed.

Abstract: According to one embodiment, a semiconductor integrated circuit includes first to six transistors and a constant current source circuit. The first and second transistors form a current mirror circuit connected to a first power source node. The third and fourth transistors form a differential pair circuit. The third and fourth transistors receive first and second external signals at their gates, respectively. The constant current source circuit has one end connected to source terminals of the third and fourth transistors, and the other end connected to a second power source node. The fifth and sixth transistors form a current pathway between a common gate node of the first and second transistors and the constant current source circuit. The gate of fifth transistor is connected to a signal output node. The gate of sixth transistor receives a signal of logic opposite to a signal to be obtained at the signal output node.

Abstract: A corner detector comprises a PMOS threshold voltage detector and an NMOS threshold voltage detector, the PMOS threshold voltage detector is composed of a first clock terminal, a first CMOS inverter, a first capacitor, a PMOS threshold voltage function generator and a first voltage output terminal, wherein the PMOS threshold voltage function generator is electrically connected to the first capacitor and applied to generate a first formula of voltage signal as a function of threshold voltage, the NMOS threshold voltage detector is composed of a second clock terminal, a second CMOS inverter, a second capacitor, an NMOS threshold voltage function generator and a second voltage output terminal, wherein the NMOS threshold voltage function generator is electrically connected to the second capacitor and applied to generate a second formula of voltage signal as a function of threshold voltage.

Abstract: According to an embodiment of the invention, a sense amplifier for, e.g., an array of DRAM data storage cells includes one or more amplifier stages connected together in series. The amplifier stages together form the sense amplifier for the DRAM array. Each amplifier stage includes an isolation capacitor to reduce to a relatively small value any mismatch between the threshold voltages of the transistors within each amplifier stage. A bitline from the DRAM array of memory cells connects to the first amplifier stage. An output from the last amplifier stage connects to a write back switch, the output of which connects to the bitline at the input of the first amplifier stage.

Abstract: A receiver of a semiconductor memory apparatus includes a first input transistor configured to be turned ON when an input signal is equal to or more than a predetermined level; a second input transistor configured to be turned ON when the input signal is equal to or less than the predetermined level; a first output node voltage control unit configured to increase a voltage level of an output node when the first input transistor is turned ON; a second output node voltage control unit configured to decrease the voltage level of the output node when the second input transistor is turned ON; a third input transistor configured to increase the voltage level of the output node when an inversion signal of the input signal is equal to or less than the predetermined voltage level; and a fourth input transistor configured to decrease the voltage level of the output node when the inversion signal of the input signal is equal to or more than the predetermined voltage level.

Abstract: A comparator with a fixed reference voltage (self bias) for an oscillator is disclosed. The comparator includes: a depletion MOS network to form a source current, wherein the gate and the source has a connection; and an enhanced MOS transistor, wherein the drain or the source connects with the depletion MOS transistor in series. The gate of the enhanced MOS transistor receives an input voltage when the input voltage is lower than the reference voltage, and the comparator outputs a high level voltage, or the enhanced MOS transistor outputs a low level voltage if the input voltage is higher then the reference voltage. Moreover, the oscillator's comparator has a reference voltage that is independent from temperature and supply voltage source.

Abstract: A comparator includes: a CMOS inverter constituted by a combination of a first p-channel MOS transistor and a first n-channel MOS transistor; a second p-channel MOS transistor connected in parallel to the first p-channel MOS transistor in an analog input period, and disconnected from the first p-channel MOS transistor in a comparison period; and a second n-channel MOS transistor connected in parallel to the first n-channel MOS transistor in the analog input period, and disconnected from the first n-channel MOS transistor in the comparison period.

Abstract: A voltage detecting circuit that has a stable output even when a battery voltage is low includes first and second terminals connected across poles of a battery, a reference voltage generating circuit, and a comparator for comparing values of the reference voltage and voltage across the terminals. A first output circuit is connected between the first and second terminals to output a first output signal on the basis of the comparison result, a second output circuit outputs a second output signal that changes in value based on a voltage of the battery and on the basis of signals at the first and second terminals, and an output terminal outputs the first and second output signals.

Abstract: An analog-to-digital converter includes a plurality of comparators that each have an output, two analog data inputs coupled to a differential analog data input, and two reference voltage inputs. The two reference voltage inputs are each coupled to a resistor ladder that contains a plurality of resistors coupled in series. Importantly, the two reference voltage inputs of each comparator are positively biased, meaning that the positive reference voltage input is coupled to a point on the resistor ladder at a relatively higher potential than the negative reference voltage input. The outputs of the comparators are coupled to an encoder that encodes signals at the outputs into a digital signal. By positively biasing the differential reference voltage inputs of the comparators in this manner, the differential gain, dynamic voltage range, and voltage symmetry of the comparators are advantageously improved.

Abstract: The present invention discloses a current comparator having simple, cheap and fast characteristics, especially discloses a current comparator having a small dead zone and excellent driving capability. The current comparator of the present invention comprises a first CMOS transistor, a second CMOS transistor, a diode-configured N-type transistor, a fourth CMOS transistor and a fifth CMOS transistor.

Abstract: This invention relates to a voltage comparator with an input for an analog signal and an output for a digital signal, comprising an inverter which has an input coupled to the comparator input and an output coupled to the comparator output, and comprising at least two MOS transistors coupled to each other, at least one of the two MOS transistors being of the floating gate type.

Abstract: A current-mode sense amplifier includes a current mirror circuit having an input branch controlled by a current input signal to be sensed and an output branch connected to a capacitor. The output branch and gates of current mirror transistors are connected to transistors for precharge operation. The sense amplifier needs no reference current, provides a low component count and is noise resistant.

Abstract: Temperatures on a chip, including particular regions of a chip are monitored by sensing changes in sub-threshold conduction of a field effect transistor (FET) integrated on the chip due to changes in charge carrier population distribution with temperature therein. Such changes in sub-threshold current with temperature are preferably detected using a current mirror and two FETs with different channel geometry and slightly different gate voltages such that the currents are equal at a specific design temperature. The slightly different gate voltages are conveniently provided by a low current voltage divider with or without on-chip voltage regulation in which resistor ratios can be accurately and repeatably obtained. Variations from that temperature thus yield large current differences and substantial signal swing which improve noise immunity. Hysteresis can be applied to the output (or amplified output) of the current mirror to obtain bistable thermostat-like action.

Abstract: The present invention has an object to provide an inverted amplifying circuit with improved accuracy of output and reduced electric power consumption. In an inverted amplifying circuit according to the present invention, a MOS switch is connected between pMOS and nMOS of a CMOS inverter and between balancing resistances. The MOS switch is opened when the inverted amplifying circuit does not work.

Abstract: A data sensing apparatus particularly useful for sensing a ROM device. The apparatus can be used with various voltage level devices because it has an adjustable load. A first load element is connected to the voltage source applied to the ROM device. A second load element is connected in parallel with the first load element. A switching element is connected to the first load element and provides a path for a sensing current of the ROM device. An inverter, responsive to the sensing current, controls the switching element. An amplifier, connected to the switching element, provides a useful output indicative of the sensing current of the ROM device. A voltage level detector detects the voltage level of the voltage source. It disables the second load element so as to increase the load when the voltage level of the voltage source is higher than a predetermined value.

Abstract: An improved sense amplifier is disclosed employing bleeder and dampening devices coupled in a robust feedback configuration for maintaining a relatively narrow and stable voltage level above the high threshold of the sense amplifier.