Abstract: A vibration device comprises a vibrating member having at least n (n?2) piezoelectric elements arranged on a vibrating plate, each of the piezoelectric elements being formed by using a lead-free piezoelectric material and electrodes, wherein if the temperature that maximizes the piezoelectric constant of the piezoelectric material of each of the n piezoelectric elements is expressed as Tm (m being a natural number between 1 and n), at least two of T1 through Tn differ from each other.

Abstract: A semiconductor device with reduced device resistance is disclosed. The semiconductor device comprises a semiconductor chip in which the chip thickness at the center portion of the chip where the circuit elements are disposed is uniform and is different from the chip thickness near the chip sides distant from the circuit elements.

Abstract: Devices are provided for the harmonization of mechanical and electromagnetic oscillations, which include an outer body and an inner body, both having an axially symmetric shape relative to an axis (x). The inner body may be received inside a first cavity of the outer body so as to be firmly connected to the latter. The outer body and the inner body are made of, respectively, of stainless steel and copper, and may have a weight ratio equal to 3 or the number ?. The dimensions of the device may be such that their ratios are integers, or fractions thereof, or numbers corresponding to powers of ? and/or ?.

Abstract: Disclosed is an amplifier circuit with cross wiring of direct-current signals and microwave signals. The circuit includes a circuit network unit formed of a direct-current feeding circuit and a microwave power signal circuit. The direct-current feeding circuit comprises a high-electron-mobility transistor (HEMT) drain power-up bonding point, a corresponding line, a feeding end of a tail-level HEMT transistor core, a first Metal-insulator-Metal (MIM) capacitor, a first micro-strip inductor, symmetrical branch micro-strips, a second MIM capacitors. The microwave power signal circuit comprises a signal end of the tail-level HEMI transistor core, two third MIM capacitors, other electrode of the second MIM capacitors, a ground micro-strip inductors, a second micro-strip inductors, a third micro-strip inductor, a fourth MIM capacitor.

Abstract: An amplifier (1) is provided, in particular, wideband amplifier with an input (4) and an output (5) comprising a first amplifier stage (2) and a second amplifier stage (3), wherein the first amplifier stage (2) has an active power splitter with at least one injection point, wherein this injection point corresponds to the input (4) of the amplifier, and at least two discharge points (9a, 9b), wherein this active power splitter is formed according to a traveling wave amplifier principle and the second amplifier stage (3) has at least two injection points (11a, 11b) and at least one discharge point, wherein this discharge point corresponds to the output (5) of the amplifier and is formed as a power coupler. It is essential that the second amplifier stage (3) is formed as a power coupler, wherein this power coupler is formed according to the principle of a reactively matched amplifier.

Abstract: A traveling wave amplifier including differential circuits to suppress the backward wave effect is disclosed. The differential amplifier includes two cascade units providing a switching transistor, a static cascade transistor, and a dynamic cascade transistor connected in series. The dynamic cascade transistor provides a feedback circuit to feed the collector output to the base input thereof through a resistive divider in lower frequencies and a capacitive divider in high frequencies.

Abstract: The invention describes a radio frequency (=RF) power amplifier (20), comprising—a coupling array (1) comprising a plurality of nano-sized coupling elements (2; 41; 51), wherein the coupling elements (2; 41; 51) are grouped into a number N of sub-arrays (SA-1 . . . SAN), with each sub-array (SA-1 . . . SAN) exhibiting•a specific resonance frequency (f1 . . . fN) and•a specific attenuation of a mechanical self-oscillation of its coupling elements (2; 41; 51), wherein for the coupling elements (2; 41; 51) of each sub array (SA-1 . . . SAN), there is a stimulating means for stimulating a mechanical self-oscillation, —and a signal processing unit (22) for controlling the stimulating means with stimulating pulses having a pulse form and timing calculated by the signal processing unit (22) based on an evaluation of the spectral components of an RF signal to be amplified, namely the amplitudes (C1. . . CN) and phases (?1. . . ?N) at the frequencies (f1 . . . fN) corresponding to said specific resonance frequencies.

Abstract: A spatially-fed high-power amplifier comprises one or more shaped reflectors to reflect an initial wavefront, and an active array amplifier to amplify the reflected wavefront to generate a high-power planar wavefront. The shaped reflectors provide the reflected wavefront with substantially uniform amplitude when incident on the active array amplifier. The initial wavefront may be a substantially spherical wavefront, and the shaped reflectors may compensate for any amplitude taper of the initial wavefront to provide the reflected wavefront with substantially uniform amplitude components for incident on the active array amplifier. In some embodiments, the shaped reflectors may also contour the illumination to fit the shape of the active array amplifier to help minimize spillover.

Abstract: A phonon laser pumped by a thermal gradient, the phonon laser having a coherent phonon pumping media, a heat source and a heat sink. The pumping media includes an array of micro resonators and a thermal phonon emitting media.

Abstract: A circuit arrangement for transmitting and receiving radio signals includes an amplification device with an output for transmitting signals, an input for receiving signals and a supply line, and an antenna for transmitting and receiving signals. The antenna is connected to the output of the amplification device. The output of the amplification device is an input for signals received via the antenna, and the supply line is an output for received signals that are converted to the supply line by the amplification device.

Abstract: An automatic pole-zero (APZ) adjustment circuit for an ionizing radiation spectroscopy system. An amplitude histogram of an acquired spectrum is obtained. The shape of a selected peak from the amplitude histogram is analyzed for peak shape distortion indicating the existence of undershoot or overshoot. An analog correction signal generated by a pole-zero adjustment network is added to cancel existing undershoot or overshoot, thereby minimizing distortion of the peak shape. In an alternate embodiment, the correction signal is a digital transformation algorithm applied to a programmable digital shaping filter, thereby digitally minimizing distortion of the peak shape.

Abstract: An inductor includes a semiconductor substrate, pairs of pads formed on the semiconductor substrate at predetermined intervals with the pads in a pair spaced apart a predetermined distance, bonding wires connect the pads constituting the corresponding pairs of pads, and metal lines connect pads among the pairs to other pads to form a current path for the inductor. Since the inductor uses bonding wire which has low resistance and can reduce the contact area with chips, the inductor has few parasitic components and a high quality factor in nearly all frequency regions.

Abstract: A method and apparatus are provided for reducing power dissipated by an amplifier circuit such as a line driver in a Digital Subscriber Line (DSL), a power amplifier in a radio environment, etc. The power supplied to the amplifier circuit changes depending upon the level of input signal to the amplifier circuit. A higher power is supplied to the amplifier circuit when the level of the input signal exceeds a threshold. Otherwise, a lower power is supplied to the amplifier circuit.

Abstract: A digital-to-analog converter for an acoustic charge transport (ACT) device that permits an ACT device to directly accept digital inputs. The digital-to-analog converter includes a plurality of digital-to-analog converter circuits that convert respective groups of digital information applied to the ACT device to corresponding analog voltages. The corresponding analog voltages are applied to respective input contacts that are isolated by charge barriers formed in a channel region of the ACT device. Each of the input contacts generates a charge packet having a charge magnitude corresponding to a numerical value of an input group of the applied digital information. The charge packets generated by each of the input contacts coalesces into a collective charge packet which then travels through the ACT device.

Abstract: A solid state electromagnetic wave amplifier is provided with confinement structures for the prevention of transverse carrier wave diffusion into the amplifier body. The carrier waves are confined with a non-metallic semiconductor layer sandwiched between a semi-insulating substrate and a spacer insulating layer. The amplifier can operate at frequencies up to on the order of 100 GHz.

Abstract: A magnetron in which the space between the anode and cathode contains a h mobility semiconductor. The structure is non-cylindrically symmetric because the anode and cathode are placed on top of the semiconductor. The electrons are injected into the substrate and then accelerated toward the anode members where they are extracted. Alternate anode members are strapped together to favor excitation of the .pi.-mode.

Abstract: Occurrence of high field domain in the conventional Gunn diode is prevented by covering a solid body such as a semiconductor element partially or wholly by a dielectric member or by a control element such as a metallic layer coupled reactively with the solid body through a dielectric member, whereby a solid state element having a negative differential conductivity is obtained. Such a type of negative-resistance solid state element, together with its various modes of embodimental construction disclosed herein, affords a superior solid state element which is applicable to amplifiers, oscillators, and the like of millimeter or submillimeter bands.

Abstract: Undesirable odd mode oscillations in coplanar active medium propagation (AMP) devices are suppressed, and transmission of the desired even mode signal is enhanced by placing a planar resistance element beneath the substrate supporting the Gunn epitaxial layer.

Abstract: A device is disclosed for amplifying electromagnetic waves propagating al a meander line slow wave structure by means of magnetic cylindrical domains or bubbles which are propagating at substantially the same velocity as the RF wave in an adjacent platelet of orthoferrite having associated with it a propagation arrangement of the conventional type which is adapted to move the domains from one end of the platelet to the other. Since the magnetic bubbles are magnetic dipoles that produce magnetic surface charges, a portion of their energy is transferred to the propagating RF wave, resulting in amplification of the RF wave.

Abstract: A circuit for amplifying high frequency electromagnetic waves composed of a Josephson junction constituting an electromagnetic high frequency line along which electromagnetic waves can propagate at a signal frequency and at least one idler frequency, the junction being supplied with a direct voltage which modulates its associated Josephson current with respect to time, and with a magnetic field which modulates that current with respect to space.

Abstract: A negative differential mobility amplifier with a layer of semiconductor material of negative differential mobility. Two electrodes formed by two metallic combs are disposed on the free surface of the layer of semiconductor material. Overlapping fingers of the metallic combs are orthogonal to the propagation direction of the progressive wave and form an ohmic contact with the free surface of the semiconductor layer. The semiconductor layer is deposited onto a first surface of a dielectric substrate. A second surface of the dielectric substrate opposite to the first surface is provided with a metallic plate. The two electrodes are brought in operation to different electrical d.c. biassing potentials by a biassing source and to the high frequency potential of the progressive wave to be amplified. A line of asymetric parallel bands is formed by the metallic plate, the metallic combs, and the dielectric substrate.

Abstract: A transmission line is disclosed which comprises a conductive layer, a resistive semiconductor layer disposed on the conductive layer and a blocking electrode disposed on the resistive semiconductor layer. By applying a biasing voltage between the blocking electrode and the conductive layer, a depletion layer is produced in the resistive semiconductor layer, the depletion layer formed in the semiconductor layer being used as a medium for transmission of electromagnetic wave.

Abstract: A microwave frequency discriminator using a one port active device amplifier including a circulator for coupling an input RF signal of substantially constant power level into the amplifier and an output RF signal out from the amplifier. The discriminator further comprises input and output matching networks connected to the circulator and a detector for generating a D.C. signal as a function of the incoming signal frequency. The input and output impedance matching networks are formed to provide selected impedance conditions to the amplifier such that the power-frequency response of the amplifier varies substantially linearly approximating a frequency discriminator characteristic throughout a predetermined frequency bandwidth.

Abstract: Amplification of optical signals propagating through a first waveguide is achieved by modulation of high intensity light propagating through an elastomeric waveguide responsive to said signals, the modulation of the high intensity light being accomplished by an apparatus including a photodiode for registering the modulation of the optical signals and an electrode arrangement for causing corresponding light-modulating deformation of the elastomeric waveguide, the circuitry between photodiode and the electrode arrangement including a resistor and a D.C. power source.

Abstract: A varactor tuning apparatus for tuning a strip transmission line radio frequency device, wherein the device having predetermined operating characteristics includes an active element such as an avalanche diode and a resonant conductive strip section. The tuning apparatus comprises a separate varactor circuit having a varactor mounted on a dielectric substrate including a resonant conductive strip. The varactor circuit is RF coupled to the strip transmission line of the device to provide for tuning the device by varying the reactance of the strip transmission line by electrically changing the capacitance of the varactor.

Abstract: A planar transmission line comprising a Gunn effect semiconductor having an epitaxial portion as the propagating medium amplifies and switches r.f. signals and is not transit time limited in the direction of propagation. The spacing between the transmission line conductors and the dopant concentration of the Gunn effect semiconductor are selected to prevent the formation of domains and thereby prevent Gunn oscillations from occurring at E fields above the Gunn threshold.

Abstract: Disclosed is a millimeter wave waveguide structure adapted for operation with negative resistance devices, such as solid state avalanche breakdown diodes, at frequencies up to about 170 GHz or higher. A central portion of the structure is formed by a cylindrical metallic impedance transformer and bias pin which has a major face thereof substantially parallel to a common lower waveguide wall of the structure. A negative resistance device is DC coupled between this common waveguide wall and one edge of the impedance transformer, so that the impedance transformer also provides the required DC bias to the negative resistance device. Other portions of the waveguide structure include a first upper waveguide wall, immediately adjacent one side of the impedance transformer, and this wall, together with the common lower waveguide wall, forms a tuning cavity into which a sliding tuning short is positioned.

Abstract: Two transferred electron devices are provided in a thermally coupled relationship. One transferred electron device is operated above threshold voltage as an amplifier or oscillator, while the other transferred electron device is operated below threshold voltage so as to supply heat to the first device, to compensate for any operating temperature changes and thereby maintain the first device at a substantially constant temperature.

Abstract: This microwave circuit incorporates a transistor structure that provides either a two port amplifier or an injection frequency locked oscillator. This circuit eliminates circulators employed with Gunn and Impatt diode amplifiers and injection frequency locked oscillators. The collector-base junction is reverse biased so that the collector region functions either in the Impatt mode or in the transferred electron mode. An RF input signal is applied across the forward biased emitter-base junction. With a load across the collector-base junction having a conductance equal to the absolute value of the negative conductance generated by the collector region, the circuit functions as an oscillator at a frequency which is injection locked to the frequency of the input signal. With a load of increased conductance to suppress oscillations, i.e. overload the collector region, the circuit functions as an amplifier.