Tunnel Diode Oscillators Patents (Class 331/107T)
  • Patent number: 6133798
    Abstract: In plural oscillation systems each of which can be described by the van der Pol equation, each oscillation system is reciprocally connected with at least one oscillation system other than the own oscillation system by a coupling factor to realize automatically the phenomenon of synchronization of the respective oscillation systems to enable spontaneous tuning of the entire system. A self-excited oscillation of an oscillation system prescribed by a van der Pol equation is controlled on/off by varying an applied voltage as a variable.
    Type: Grant
    Filed: June 9, 1999
    Date of Patent: October 17, 2000
    Assignee: NEC Corporation
    Inventors: Seido Nagano, Jaw-Shen Tsai
  • Patent number: 5883549
    Abstract: A BJT, an inductor, and an RTD are configured to define a negative resistance oscillator circuit that is suitable for monolithic integration. The BJT is forward biased so that the RTD operates at a DC operating point (I.sub.Q,V.sub.Q) on its characteristic I-V curve in its negative differential resistance region. The thermal noise inherent in the circuit causes it to start oscillating about the DC operating point (I.sub.Q,V.sub.Q) where the RTD's negative resistance R.sub.n provides positive feedback that amplifies the oscillations until equilibrium is established thereby producing a sinusoidal waveform. The low power BJT/RTD oscillator operates at power levels approximately one-tenth those of known integrated feedback oscillators and oscillates at frequencies in the hundreds of Ghz range that are currently only achievable using waveguide oscillators.
    Type: Grant
    Filed: June 20, 1997
    Date of Patent: March 16, 1999
    Assignee: Hughes Electronics Corporation
    Inventor: Hector J. De Los Santos
  • Patent number: 5675295
    Abstract: A millimeter or microwave oscillator device for a receiver or a transmitter is described. The oscillator device including a high frequency oscillating circuit including an active device 41; said active device 41 having a first and a second contact 56, 52, a signal line 49 of said oscillator device 41 being connected to said first contact 56 for connection to a load circuit 43; a biasing circuit 47 for said active device; and a low frequency oscillation suppression circuit; wherein said low frequency oscillation suppression circuit includes a decoupling capacitor 45 and one electrode of said decoupling capacitor 45 is connected to said second contact 52. A manufacturing method for the oscillator device is also disclosed.
    Type: Grant
    Filed: May 8, 1996
    Date of Patent: October 7, 1997
    Assignee: IMEC vzw
    Inventors: Steven Brebels, Kristel Fobelets, Philip Pieters, Eric Beyne, Gustaaf Borghs
  • Patent number: 5339053
    Abstract: A microwave oscillator capable of being switched into or out of the oscillating state within a fraction of the period of oscillation. The instant-on microwave oscillator permits both the generation and modulation of a microwave signal by using a single active microwave semiconductor device which is a resonant tunneling diode. The instant-on microwave oscillator circuit includes a conductive transmission line having an impedance Z.sub.O with a corresponding ground plane; and a pair of output terminals connected one on each of the transmission line and the ground plane. An impedance Z.sub.L, having an impedance value which is less than ZO, is positioned across the output terminals. A pair of input terminals is connected at the opposite end of the transmission line, one on each of the transmission line and the ground plane with a resonant tunneling diode connected across the input terminals. An impedance Z is connected to the input terminal on the biased side of the transmission line.
    Type: Grant
    Filed: September 17, 1993
    Date of Patent: August 16, 1994
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Robert A. Lux, Thomas E. Koscica, James F. Harvey
  • Patent number: 5315272
    Abstract: A light emitting tunnel diode oscillator comprising a body of single crystalline material having a first portion n-doped and a second portion p-doped in such a way that the resulting p-n junction has the low voltage conductance characteristics of a tunnel diode as well as characteristics of light emission.The light emitting tunnel diode oscillator comprises a plurality of alternately layered n-doped portions and p-doped portions.a light emitting tunnel diode oscillator wherein said first n-doped portion and said second p-doped portion are formed to have a thickness corresponding to an integral number of desired wave lengths.
    Type: Grant
    Filed: April 26, 1993
    Date of Patent: May 24, 1994
    Assignee: Grumman Aerospace Corporation
    Inventor: William E. VonWicklen
  • Patent number: 5144261
    Abstract: An optically injection locked resonant tunnel diode oscillator assembly hng a resonant tunnel diode (RTD) which, when voltage biased, oscillates at a free running frequency; an optical signal delivery system, such as a light intensity modulator connected to optical fibers; and other oscillator circuitry which one skilled in the art could readily adapt to the concepts of the present invention. In operation, the free running oscillation of the RTD can be locked to the phase and frequency of the intensity modulated optical signal delivered via the optical signal delivery system. This injection locking occurs as the modulation frequency approaches the free running oscillation frequency.
    Type: Grant
    Filed: January 15, 1992
    Date of Patent: September 1, 1992
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: James F. Harvey, Robert A. Lux, Thomas P. Higgins, Arthur Paolella, Dana J. Sturzebecher
  • Patent number: 4745374
    Abstract: An extremely-high frequency semiconductor oscillator which produces a large but substantially noise-free output power with minimized fluctuation of output power for changes in device temperature is realized by using, as its power producing component, a semiconductor transit time diode having a frequency-dependent negative resistance mounted in a cavity resonator of a wave guide means provided with a tuning short at one side of the waveguide means and being designed to perform carrier injection by a combination of tunnel and avalanche phenomena.
    Type: Grant
    Filed: June 17, 1986
    Date of Patent: May 17, 1988
    Assignee: Zaidan Hojin Handotai Kenkyu Shinkokai
    Inventors: Jun-ichi Nishizawa, Kaoru Motoya