Abstract: An oscillator comprising: a resonator including a negative resistance element; a voltage bias circuit configured to apply a voltage across the negative resistance element; and a first shunt element in which a resistor and a capacitor are electrically connected in series, wherein the negative resistance element and the first shunt element are electrically connected in parallel to the voltage bias circuit.

Abstract: A varactor is provided. A substrate includes a first surface, a second surface and a first opening and a second opening in the substrate. A conductive material is filling the first and second openings, to form a first through-wafer via (TWV) and a second through-wafer via. A first capacitor is coupled between the first through-wafer via and a first terminal. A second capacitor is coupled between the second through-wafer via and a second terminal. A capacitance of a depletion-region capacitor between the first through-wafer via and the second through-wafer via is determined by a bias voltage applied to the first through-wafer via and the second through-wafer via.

Abstract: A memristor-based oscillator can be fully implemented without any reactance element.

Abstract: The present disclosure relates to an oscillation circuit including a differential negative resistance element, a resonance circuit connected to the differential negative resistance element, and a stabilization circuit connected in parallel with the negative resistance element to suppress parasitic oscillation. The stabilization circuit includes a variable shunt resistor and an adjusting device for adjusting the shunt resistor.

Abstract: A method includes providing an oscillator having a field effect transistor connected with a resonant circuit. The field effect transistor has a gate electrode coupled to a source of gate voltage, a source electrode, a drain electrode and a graphene channel disposed between the source electrode and the drain electrode and electrically connected thereto. The method further includes biasing the graphene channel via the gate electrode into a negative differential resistance region of operation to cause the oscillator to generate a frequency signal having a resonant frequency f0. There can be an additional step of varying the gate voltage so as to bias the graphene channel into the negative differential resistance region of operation and out of the negative differential resistance region of operation so as to turn on the frequency signal and to turn off the frequency signal, respectively.

Abstract: The LC tank of a VCO includes a main varactor circuit and temperature compensation varactor circuit coupled in parallel with the main varactor circuit. The main varactor is used for fine tuning. The temperature compensation varactor circuit has a capacitance-voltage characteristic that differs from a capacitance-voltage characteristic of the main varactor circuit such that the effects of common mode noise across the two varactor circuits are minimized. The LC tank also has a plurality of switchable capacitor circuits provided for coarse tuning. To prevent breakdown of the main thin oxide switch in each of the switchable capacitor circuits, each switchable capacitor circuit has a capacitive voltage divider circuit that reduces the voltage across the main thin oxide switch when the main switch is off.

Abstract: A wideband small-scale cavity oscillator includes a single resonating chamber, a negative resistance diode, at least one capacitive waveguide obstacle, and a tap. The single resonating chamber includes a length, width, and height. The length is greater than the width and height. The negative resistance diode is centrally disposed in the single resonating chamber, and the at least one capacitive waveguide obstacle is disposed in the single resonating chamber. The tap is disposed along the length of the single resonating chamber. A method of manufacturing a wideband small-scale cavity oscillator is provided, which includes providing a single resonating chamber including a length, width, and height, disposing a negative resistance diode centrally in the single resonating chamber, disposing at least one capacitive waveguide obstacle in the single resonating chamber, and disposing a tap along the length of the single resonating chamber.

Abstract: A voltage controlled oscillator includes a split ring resonator (SRR) configured to have meta-material characteristics fabricated on a board, and an energy compensation circuit configured to cause resonant oscillation of the SRR. The energy compensation circuit is fabricated in the form of an integrated circuit.

Abstract: An oscillator has a negative resistance element and a resonator along with a capacitor electrically connected in parallel with the negative resistance element relative to a power bias circuit, a capacitance of the capacitor being so selected as to suppress any parasitic oscillation due to the power bias circuit and allow oscillation at a resonance frequency due to the negative resistance element and the resonator.

Abstract: A voltage-controlled oscillator (VCO) is provided. The VCO includes an oscillator unit disposed on a substrate, and a varactor unit. The varactor unit is coupled to the oscillator unit to form a VCO loop. The varactor unit includes a varactor and at least one control terminal. The varactor is disposed in the substrate, and includes at least two through-silicon via (TSV) structures. The at least one control terminal renders the varactor unit to be biased to change a capacitance value of the varactor.

Abstract: An enhanced negative resistance voltage controlled oscillator (VCO) is provided, in which the body of each transistor within a pair of cross-coupled transistors is coupled to the gate of the same transistor through a resistor. The body transconductance is employed to enhance the negative resistance of the cross-coupled pair of transistors. At the same time, a forward body bias voltage reduces the threshold voltage of the cross-coupled pair to allow the VCO to operate at a low power supply voltage. Further, the resistor connected between the body and the drain of each transistor voids the leakage in the substrate, and thus, reduces power consumption of the VCO further. This VCO provides low power operation with enhanced figure of merit without employing any extra inductors besides the inductors that are part of the LC tank.

Abstract: An oscillator circuit includes a pair of negative-resistance circuits, a pair of transmission lines coupled to the pair of negative-resistance circuits respectively, a pair of pads that are provided symmetrically to each other with respect to the pair of transmission lines and are to be coupled to each other by a bonding wire, and a synthetic circuit to synthesize output signals of the pair of negative-resistance circuits.

Abstract: High-speed CMOS ring voltage controlled oscillators with low supply sensitivity have been disclosed. According to one embodiment, a CML ring oscillator comprises a CML negative impedance compensation circuit comprising two cross coupled transistors and a resistor connected to the two transistors for resistive biasing and a CML interpolating delay cell connected in parallel with the CML negative impedance compensation. An impedance change of the CML negative impedance compensation due to supply variation counteracts an impedance change of the CML interpolating delay cell.

Abstract: Oscillator circuits are disclosed herein. An embodiment of an oscillator circuit includes a first bias circuit and a second bias circuit. An oscillator first connection terminal is coupled to a node, wherein the node is coupled to the first bias circuit and the second bias circuit. An oscillator second connection terminal connected to the second bias circuit. An increase in the oscillation amplitude of the oscillator increases the current in the second bias circuit and causes a reduction in the bias current in the first bias circuit.

Abstract: Chaotic oscillator-based random number generation is described. In an example, a circuit includes a negative differential resistance (NDR) device to receive an alternating current (AC) bias. The circuit further includes a capacitance in parallel with the NDR device, the capacitance having a value such that, in response to a direct current (DC) bias applied to the NDR device and the capacitance, a voltage across the capacitance oscillates with a chaotic period. The circuit further includes a random number generator to generate random numbers using samples of the voltage across the capacitance.

Abstract: A voltage controlled oscillator includes a split ring resonator (SRR) configured to have meta-material characteristics fabricated on a board, and an energy compensation circuit configured to cause resonant oscillation of the SRR. The energy compensation circuit is fabricated in the form of an integrated circuit.

Abstract: A negative resistance device for a multiphase oscillator is disclosed. The negative resistance device is coupled to taps of the multiphase oscillator so that it injects no energy into the oscillator when the oscillator is most sensitive to noise, thereby decreasing the phase noise of the oscillator. The negative resistance device also guarantees the direction of movement of a traveling wave past the taps of the multiphase oscillator.

Abstract: An oscillator having a negative resistance device and a resonator includes: a transmission line connected to the negative resistance device, a three-terminal device including a first terminal connected to the signal line side of the transmission line at a terminal part, a second terminal connected to the grounding line side of the transmission line and a third terminal receiving a control signal applied thereto; a first regulation unit for regulating the control signal to be applied to the third terminal; and a second regulation unit for regulating the voltage to be applied to the second terminal, the first and the second regulation unit being adapted to regulate respectively the control signal and the voltage so as to make the characteristic impedance of the transmission line and the impedance between the first and the second terminal show an impedance matching. The power consumption rate of the stabilizing circuit can be reduced.

Abstract: A stabilization network and a semiconductor device having the stabilization network wherein the stabilization network includes an active element having a negative resistance accompanying a high frequency negative resistance oscillation; and a tank circuit composed of a resistance connected to a main electrode of the active element, an inductance and capacitance which are connected in parallel with the resistance and synchronize with an oscillating frequency of the high frequency negative resistance oscillation, wherein the stabilization network is performed for suppressing a negative resistance accompanying a Gunn oscillation and obtaining stable and highly efficient power amplification.

Abstract: A baseband signal processing unit changes the collector current of a transistor (20) formed by a bias control circuit (7) in accordance with a baseband transmission signal input from a baseband signal input terminal (18), changing the drain bias of a high-frequency transistor (1) to realize frequency modulation by changing the oscillation frequency, and the radiation wave thereof forms a transmit RF signal, whereby the transmission operation is performed. On the other hand, the oscillation signal is synchronized with a frequency modulated RF signal that arrives from outside, the change in frequency caused by the frequency modulation is generated as a change in the drain bias of the high-frequency transistor (1), and reception operation is performed by taking out that change as a voltage amplitude change from the baseband signal output terminal (14). As a result, it is possible to provide a microwave/millimeter wave communication apparatus that is simple in structure, low cost, and low power consumption.

Abstract: An oscillator circuit includes a pair of negative-resistance circuits, a pair of transmission lines coupled to the pair of negative-resistance circuits respectively, a pair of pads that are provided symmetrically to each other with respect to the pair of transmission lines and are to be coupled to each other by a bonding wire, and a synthetic circuit to synthesize output signals of the pair of negative-resistance circuits.

Abstract: A microwave/millimeter wave sensor apparatus including a planar radiation type oscillator substrate having an inner-layer GND interposed between a front surface side dielectric substrate and a rear surface side dielectric substrate and a pair of conductor patches in an axis-symmetric manner on the side of the front surface layer. A gate and drain of a microwave transistor are respectively connected to the conductor patches to supply power to the gate and the drain of the microwave transistor through a gate-side RF choke circuit and a drain-side RF choke circuit. An impedance line satisfying an oscillation condition is connected to a source and a transmit RF signal in an RF zone as a planar radiation type oscillator is transmitted and a receive RF signal as reflected waves is received from a measured object, thus obtaining an IF signal as the sensing information through homodyne mixing.

Abstract: A frequency source and a method of frequency generation employ a memristive negative differential resistance (M-NDR) voltage controlled oscillator (VCO). The frequency source includes a first M-NDR VCO of a plurality of memristive VCOs to provide a first signal having a first signal frequency. The frequency source further includes a second M-NDR VCO of the plurality to provide a second signal having a second signal frequency. The first and second M-NDR VCOs are interconnected with the plurality of memristive VCOs. The first and second M-NDR VCOs have independent programmable states and are connected to a common output of the frequency source. The method includes providing an M-NDR VCOs, where each M-NDR VCO includes an M-NDR device connected in parallel with a capacitance, and applying a bias voltage to activate a selected M-NDR VCO of the plurality to produce a frequency output.

Abstract: An oscillation circuit including: a negative resistance element; a resonance circuit connected to the negative resistance element; and a stabilization circuit connected in parallel with the negative resistance element to suppress parasitic oscillation, wherein the stabilization circuit includes a variable shunt resistor and a adjusting device for adjusting the shunt resistor.

Abstract: An oscillator having a negative resistance device and a resonator includes: a transmission line connected to the negative resistance device, a three-terminal device including a first terminal connected to the signal line side of the transmission line at a terminal part, a second terminal connected to the grounding line side of the transmission line and a third terminal receiving a control signal applied thereto; a first regulation unit for regulating the control signal to be applied to the third terminal; and a second regulation unit for regulating the voltage to be applied to the second terminal, the first and the second regulation unit being adapted to regulate respectively the control signal and the voltage so as to make the characteristic impedance of the transmission line and the impedance between the first and the second terminal show an impedance matching. The power consumption rate of the stabilizing circuit can be reduced.

Abstract: A resonant circuit includes a substrate; a MEMS resonator including a fixed electrode and a movable electrode formed above the substrate and having a first terminal and a second terminal, the movable electrode having a movable portion opposing at least a part of the fixed electrode; and a voltage applying unit applying a bias voltage to the MEMS resonator, the voltage applying unit including a voltage divider circuit that includes a compensation resistance formed of a same layer as that of the movable portion to allow a resistance value to be changed by a thickness of the layer and a reference resistance formed of a layer different from that of the movable portion and connected to the compensation resistance to output a junction potential between the compensation resistance and the reference resistance to at least one of the first and the second terminals of the MEMS resonator.

Abstract: A voltage controlled oscillator (VCO) includes a voltage controlled current source (VCCS), a negative resistance circuit (NRC), a first transformer, a second transformer, a first transistor and a second transistor. A current terminal of the VCCS receives a control voltage. First terminals of first and second current paths in the NRC are coupled to a current terminal of the VCCS. Primary sides of the first and the second transformers are respectively coupled to second terminals of the first and the second current paths. Secondary sides of the first and the second transformers are first and second output terminals of the VCO, respectively. First terminals of the first and the second transistor are respectively coupled to the secondary sides of the first and the second transformers. Control terminals of the first and the second transformers are respectively coupled to the primary sides of the first and the second transformers.

Abstract: An object of the invention is to provide a multiplying oscillator capable of generating a high frequency signal by small circuit scale and power consumption in an oscillator for generating a signal with a frequency of a microwave band or more, and a local oscillator using this multiplying oscillator. A multiplying oscillator of the invention obtains a frequency signal four times or more a fundamental wave by adding a frequency adjusting unit 40 having a function of suppressing second harmonic of the fundamental wave to a resonance unit 20 in a multiplying oscillator which constructs an oscillator for connecting two negative resistance units 10 to 11 to the resonance unit 20 and generating a signal A and a signal B of mutually opposite phases in the fundamental wave and synthesizes the signal A and the signal B in phase in a synthetic unit 30 and obtains an oscillation signal output.

Abstract: An embodiment of the voltage controlled oscillator is provided. The oscillator comprises a first inductor set, a second inductor set, a second capacitor, a voltage source and a negative resistance element. The inductance of the second inductor set is k times the inductance of the first inductor set. The voltage source applies an ac voltage to the second inductor set. The negative resistance element is coupled to the second inductor set to provide a negative resistance to resonate the second capacitor at the second inductor set.

Abstract: An electrical oscillator includes a first oscillating transistor and a second oscillating transistor. The electrical oscillator also includes a first non-linear load connected to a terminal of the first oscillating transistor, and a second non-linear load connected to a terminal of the second oscillating transistor. The electrical oscillator also includes a negative resistance generated between the terminal of the first oscillating transistor and the terminal of the second oscillating transistor. The electrical oscillator does not include a tunable resonator.

Abstract: Provided is an LC resonance voltage-controlled oscillator (VCO) used for a multi-band multi-mode wireless transceiver. In order to generate a multi-band frequency, a capacitor bank and a switchable inductor are included in the LC resonance voltage-controlled oscillator. The LC resonance voltage-controlled oscillator employs an adjustable emitter-degeneration negative resistance cell in place of tail current sources in order to compensate for non-uniform oscillation amplitude caused by the capacitor bank and prevent the degradation of a phase noise due to the tail current sources.

Abstract: There is provided a 3-terminal negative differential resistance field effect element having a high output and high frequency characteristic, requiring low power consumption, and preferably having a high PVCR. The field effect element uses a compound hetero structure and forms a dual channel layer by connecting a high-transfer degree quantum well layer (13) to a low-transfer degree quantum dot layer (15) via a barrier layer (14) on a substrate (11). Under existence of an electric field obtained by voltage application to a gate electrode (17), the negative resistance field effect element (10) changes a carrier accelerated by a drain voltage applied to a drain electrode (19) from a high-transfer degree channel to a low-transfer degree channel by the tunnel effect or over the barrier layer, thereby exhibiting negative differential resistance for the drain current and changing the negative resistance inclination by the gate voltage.

Abstract: An apparatus includes a distributed resonant tunneling section with a plurality of inductive portions that are coupled in series with each other between first and second nodes, such that a respective further node is present between each adjacent pair of the inductive portions. The distributed resonant tunneling section also has a plurality of resonant tunneling device portions which are each coupled between a third node and a respective one of the further nodes.

Abstract: A tunable active inductor and a voltage controlled oscillator (VCO) are provided. The tunable active inductor includes a first current source coupled to a power source, a first metal-oxide semiconductor (MOS) transistor including a drain coupled to the first current source and a gate coupled to a first bias voltage, a second MOS transistor including a drain coupled to the power source and a gate coupled to the drain of the first MOS transistor, the gate of the second MOS and the drain of the first MOS being coupled to a second bias voltage, a resonator coupled to a source of the second MOS transistor, and a second current source coupled to the resonator. The VCO employs the tunable active inductor to freely vary the oscillation range of the VCO in a high frequency band.

Abstract: A tunable capacitance unit coupled between a pair of circuit nodes. The tunable capacitance unit comprises a tuning input supplying a tuning voltage, and first and second tuning capacitance units. Each of the tuning capacitance units comprises a pair of accumulation-mode MOS varactors with source/drains thereof coupled to the tuning input, a pair of blocking capacitors coupled to a respective gate of the accumulation-mode MOS varactors and to a respective one of the circuit nodes, and a pair of biasing resistors coupled to a respective gate of the accumulation-mode MOS varactors and to a respective bias terminal receiving a respective reference voltage. The reference voltages received by the first and second tuning capacitance units are symmetrical to a predetermined voltage.

Abstract: There is provided a frequency tunable oscillator that has less degradation of oscillation characteristics due to a parasitic reactance component or the like without mounting therein a lumped constant element such as a variable capacitance element. The frequency tunable oscillator includes a negative resistance element and a resonator which together form a feedback circuit. The frequency tunable oscillator further includes in at least a part of the feedback circuit, a distributed constant material so configured as to have a distributed constant such that an electrical length in the resonator is modulated, and a modification means for externally modifying the distributed constant material, wherein the oscillation frequency can be varied through the external modification by the modification means.

Abstract: A voltage controlled oscillator of the present invention comprises a reference voltage generation section 114 for generating a plurality of reference voltage based on a power supply voltage. A first to a third reference voltages Vref1, Vref2, and Vref3 are inputted to a first to a third variable capacitance circuits A, B, and C, respectively, at each one of terminals of each of the first to the third variable capacitance circuits A, B, and C. The first to the third reference voltages Vref1, Vref2, and Vref3 each has a fixed value, and a difference between the first reference voltage Vref1 and the second reference voltage Vref2 and a difference between the second reference voltage Vref2 and the third reference voltage Vref3 represent values different from each other.

Abstract: A voltage-controlled oscillator includes an LC bank, a negative resistor circuit, a DC block, an AC block including a source resistor, and a first bias circuit controlled by a junction node of a first and second transistor, wherein the first bias circuit provides a first feedback voltage to a first control node, and maintains a voltage at the junction node of the first and second transistors, and a second bias circuit controlled by the junction node, wherein the second bias circuit provides a second feedback voltage to a second control node and maintains a voltage at the junction node.

Abstract: A voltage controlled oscillator includes an L-C tank circuit configured to have a first capacitance that increases as a power supply voltage increases, and a capacitance compensation circuit configured to be connected in parallel with both terminals of the L-C tank circuit and to have a second capacitance that decreases as the power supply voltage increases. The voltage controlled oscillator maintains the sum of the first capacitance and the second capacitance constant regardless of the fluctuation of the power supply voltage, thereby maintaining a stable oscillation frequency.

Abstract: The present invention discloses a low power consumption frequency divider circuit. It mainly comprises a signal source; a signal injection circuit; and an oscillator circuit. The low-power consumption frequency divider circuit according to the present invention mainly uses the configuration of current reused circuit to form the common current path for reducing the power loss in the disclosed frequency divider circuit.

Abstract: An object of the present invention is to provide a voltage controlled oscillator in a microwave band without narrowing the variable frequency range and having improved phase noise characteristics. This invention is a voltage controlled oscillator in the microwave band which controls an oscillation frequency by a varactor diode, a varactor diode circuit in which a plurality of series-connected circuits having the varactor diode and a capacitance connected in series are connected in parallel and the varactor diodes include at least one or more GaAs varactor diodes of the HyperAbrupt type and at least one or more Si varactor diodes of the Abrupt type.

Abstract: In various embodiments, the invention provides a frequency controller and a temperature compensator for frequency control and selection in a clock generator and/or a timing and frequency reference. The various apparatus embodiments include a resonator adapted to provide a first signal having a resonant frequency; an amplifier; a temperature compensator adapted to modify the resonant frequency in response to temperature; and a process variation compensator adapted to modify the resonant frequency in response to fabrication process variation. In addition, the various embodiments may also include a frequency divider adapted to divide the first signal having the resonant frequency into a plurality of second signals having a corresponding plurality of frequencies substantially equal to or lower than the resonant frequency; and a frequency selector adapted to provide an output signal from the plurality of second signals.

Abstract: A voltage controlled oscillator 100 comprises an inductor circuit including inductors 101, 102; a variable capacitance circuit 110 which includes variable capacitance elements 111, 112 for changing a capacitance value in accordance with a voltage difference between both of two terminals thereof and capacitive elements 113, 114 for cutting a DC component, and which is connected in parallel to the inductor circuit; a negative resistance circuit including cross-coupled oscillating transistors 103, 104; and a time-switched level shift circuit 108 for shifting a reference voltage to be output to two or more levels in accordance with time. A connection point A of the variable capacitance elements is supplied with a control voltage Vt for controlling an oscillation frequency, and connection points B, C of the variable capacitance elements and the capacitive elements are supplied with a reference voltage Vref output from the time-switched level shift circuit 108 via resistors 115, 116.

Abstract: An oscillator circuit comprising a resonant circuit which includes a negative resistor, an inductor and an oscillation frequency setting capacitor whose capacitance is varied according to a control voltage based on oscillation frequency data and which outputs a signal having an oscillation frequency based on the oscillation frequency data, a temperature detector which outputs temperature compensation data, based on the temperature, and temperature compensating capacitors which are electrically connected to the resonant circuit and which are supplied with the temperature compensation data to change capacitance values thereof based on the temperature compensation data, thereby adjusting the oscillation frequency.

Abstract: A voltage controlled oscillator includes a resonator configured to resonate with an initial oscillation frequency during starting period of oscillation and a steady oscillation frequency during a steady state oscillation. The resonator includes a film bulk acoustic resonator having a series resonance frequency higher than the steady oscillation frequency. A negative resistance circuit configured to drive the resonator, has a positive increment for reactance in the steady state oscillation compared with reactance in the starting period.

Abstract: A high frequency oscillator has a substrate, a resonator circuit which is disposed on one principal surface of the substrate and consists of a closed loop-shaped slot line including an inner conductor and an outer conductor, an electric boundary point set on the slot line, a two-port negative resistance element for connecting between the inner conductor and outer conductor, and an output line electrically connected to the slot line. The electric boundary point is set by connecting, for example, a stub to the resonator circuit. The stub functions as an electrically short-circuited end or an electrically open end. A Gunn diode is preferably used for the negative resistance element, and inserted at a position of the slot line resonator circuit at which impedance matching is achieved.

Abstract: An apparatus includes a distributed resonant tunneling section with a plurality of inductive portions that are coupled in series with each other between first and second nodes, such that a respective further node is present between each adjacent pair of the inductive portions. The distributed resonant tunneling section also has a plurality of resonant tunneling device portions which are each coupled between a third node and a respective one of the further nodes.

Abstract: An oscillator circuit comprising a resonant circuit which includes a negative resistor, an inductor and an oscillation frequency setting capacitor whose capacitance is varied according to a control voltage based on oscillation frequency data and which outputs a signal having an oscillation frequency based on the oscillation frequency data, a temperature detector which outputs temperature compensation data, based on the temperature, and temperature compensating capacitors which are electrically connected to the resonant circuit and which are supplied with the temperature compensation data to change capacitance values thereof based on the temperature compensation data, thereby adjusting the oscillation frequency.

Abstract: A stable high-frequency clock pulse apparatus and method including frequency source, overtone crystal unit coupled with a negative resistance oscillator, a bandpass overtone filter and a drive level control is provided. The apparatus can include a frequency multiplier. The frequency source can be a micromechanical resonator.

Abstract: A high-frequency module includes a dielectric plate in which a resonator is formed and a cover for covering the dielectric plate. A hole is provided in the cover. A laser beam for laser trimming passes through the hole. The area of opening and the depth of the hole are defined so that electromagnetic waves in a usable frequency band are cut off in the hole. An electrical characteristic is measured in a state where all components including the cover are assembled, and laser trimming is performed through the hole so as to obtain a desired characteristic.