Abstract: The microwave oscillator, including a transistor (1), e.g. a field-effect transistor, includes a first resonating circuit (2) connected to a first terminal and a second resonating circuit (3) connected to a second terminal of said transistor, each resonating circuit including a microstrip (4,6), to which is coupled a dielectric resonator 5,7, both resonators of both resonating circuits being similar and operating at the same resonating frequency, third terminal of said transistor defining a power output. The oscillator provides two outputs of lower power but with a high Q.sub.ext, and an output of higher power with a medium Q.sub.ext.

Abstract: An ultra-high frequency oscillator having a very high thermal stability using a transistor coupled by a microstrip-type transmission line to a dielectric resonator with a very low temperature coefficient. It incorporates a field effect or bipolar transistor and an insulating substrate metallized or formed of metal on one face forming the ground plane. The latter projects over the substrate at a point close to two microstrip lines deposited on the face of the substrate opposite to the ground plane, the transistor being welded to said projecting point of the ground plane and to the microstrip lines. The assembly forms a compact hybrid circuit.

Abstract: A monolithic microwave voltage-controlled oscillator including one or more FETS integrated with a wide-ratio varactor. The varactor includes interdigitated anode and cathode patterns laid out on a single thin epitaxial layer. The punch through voltage of the epitaxial layer, and hence the resistivity-thickness product of the epitaxial layer, must be low. Since the substrate is semi-insulating, punch through to the substrate does not become uncontrollable, but simply permits modulation of the capacitance over a very wide range. The FETS are formed in the same epitaxial layer with the varactor, and complicated doping profiles are not required.

Abstract: A microwave voltage-controlled oscillator includes a varactor-controlled tuned circuit connected to the gate of an FET. The gate of the FET forms a Schottky barrier contact with the channel region. This Schottky barrier operates to clip the RF voltages generated in the gate circuit, and this clipping is used to provide the necessary gate bias to set the operating point of the VCO. No other source of bias is provided, and thus no DC return path from the gate circuit to the source or drain of the FET exists. Thus, the other circuit elements normally required to establish the gate operating point, which would have high frequency resonances, are eliminated. This permits operation of a microwave VCO over an extremely broad bandwidth.

Abstract: A monolithic voltage controlled oscillator is fabricated on a single semiconductor body. The oscillator includes an FET and a varactor diode interconnected such that a voltage applied across the varactor modulates the oscillating frequency of the FET output.

Abstract: A novel apparatus and method for improving the stability of an electrical circuit such as an oscillator and/or a radio frequency transmitter which is coupled to a radiating element wherein the radiating element such as a loop is coupled to the inductor or capacitor of the frequency determining circuit of the oscillator so that frequency shifts will not occur due to inductive or capacitive effects. The oscillator circuit is mounted on an insulating sheet which has a ground plane on the opposite side thereof so as to provide effective shielding and the radiating element is mounted on a portion of the insulating sheet where the grounding plane does not extend. The radiating element is also coupled symmetrically to the inductor or capacitors of the frequency determining circuit and is connected at tap points which do not have the entire inductance between them.

Abstract: A device using a dielectric resonator with a very low temperature coefficient in a very high frequency transistor oscillator (3 to 10 GHz) so as to benefit both from the very high power available and the maximum frequency stabilization due to the resonator. In the case of a FET, the gate is connected to one end of a line coupled to a dielectric resonator at a point along the line situated at a quarter wavelength from the other end of the line, which in turn is connected through a discrete resistor to a half wavelength open circuit line. Thus, the oscillation is damped when the frequency varies from the resonant frequency of the resonator.

Abstract: A microwave oscillator circuit with an FET, a dielectric resonator and a micro-strip line has a capacitive reactance element connected between the source terminal of the FET and ground or between the source and drain terminals of the FET, so that the oscillation frequency fluctuations due to the power supply voltage fluctuations or the ambient temperature variations can be suppressed.

Abstract: In a microstrip frequency modulated oscillator, the linearity of the modulating circuit incorporating a varactor diode is adjusted by using a microstrip transmission line as a secondary resonator in conjuction with a variable reactor. The varactor is connected to one end of this resonator which end is also connected to the main resonator of the microstrip oscillator. The variable reactor is connected between the other end of the secondary resonator and ground.

Abstract: A local oscillator circuit includes an inner conductor to which a pick up coil is inductively coupled. The pickup coil is further connected with a capacitor to form a resonance circuit. The resonance frequency of the resonance circuit is set higher than those frequencies in the frequency band of the local oscillator so as to pick up oscillation signals into steady level over the frequency band.

Abstract: A microwave oscillator including a GaAs field effect transistor having a gate electrode, a drain electrode and a source electrode and disposed on a planar substrate. An elongated gate transmission line is connected to the gate electrode of the field effect transistor and disposed on the substrate and terminated by a matching impedance. An elongated drain transmission line is connected to the drain electrode of the field effect transistor and disposed on the substrate at a predetermined angle to the gate transmission line while an elongated source transmission line is connected to the source electrode and disposed on the substrate for providing the oscillating output. A dielectric resonator is disposed within an angle formed between the gate transmission line and the drain transmission line.

Abstract: An exceptionally wideband, synthesizer controlled voltage controlled oscillator is disclosed which is characterized by a plurality of pin diode frequency shift networks which, when actuated shifts the frequency of the oscillator in selectable binary steps within a wide frequency range in the order of 48 MHz. Special means are included to prevent undesireable parasitic oscillation modes when such frequency shift networks are in an inactuated, switched off mode. A multiple varactor tuning circuit is provided for selecting a precise frequency within a relatively narrow frequency band on the order of 6 MHz.

Abstract: A temperature-stabilized MIC solid state oscillator in the form of a planar transmission circuit has two strip line resonators respectively having chip capacitors inserted serially in the middle of the strip lines. Both of the chip capacitors have linear capacitance temperature characteristics. One strip line resonator operates as a band rejection filter and as a load circuit of an oscillating device. The other strip line resonator operates as a serial resonator to ground a port of the oscillating device that should be grounded. The oscillating frequency characteristics versus temperature are compensated in an excellent manner due to the provision of the two strip line resonators.

Abstract: A solid-state MIC oscillator in the form of a planar transmission circuit has a band rejection filter as a load circuit of an oscillation device. The band rejection filter is a resonator coupled to a transmission line which connects the oscillation device with an oscillator load. The load impedance of the oscillation device is adjusted to the oscillating condition by the position of the resonator. A simple capacitive susceptance stub is connected to the transmission line near the coupling point of the resonator. Variation of the oscillator frequency characteristics versus temperature caused by variation of the oscillator load is improved in an excellent manner due to the provision of the simple capacitive susceptance stub.

Abstract: A dielectric resonator is housed within an internal space of a metallic casing. An amplifier is disposed outside the space and an input and output circuits are connected to the amplifier. An output coupling window is formed in the casing at the position corresponding to the output circuit of the amplifier and an input coupling window is formed in the casing at the position corresponding to the input circuit of the amplifier. An electromagnetic wave leaking from the output circuit of the amplifier is coupled through the output coupling window to the dielectric resonator and the dielectric resonator is further coupled to the input circuit of the amplifier through the input coupling window.

Abstract: An oscillator comprises two leakage lines extending in parallel with a dielectric resonator positioned therebetween, within a housing made of metal. The dielectric resonator is electromagnetically coupled to the respective leakage lines with a predetermined coupling degree through coupling gaps formed between the dielectric resonator and the respective leakage lines. The dielectric resonator is disposed at an optimum position for establishing an oscillating condition of the oscillator. Preferably, the dielectric resonator is movable in the length direction of the leakage lines.

Abstract: The invention comprises a microwave oscillator using a stripline circuit. The active device utilized in the oscillator is a bipolar transistor. A microstrip circuit is coupled to the emitter of the transistor while the collector is coupled to ground. This generates a negative impedance characteristic at the base of the transistor at the operating frequency. The operating frequency is determined by a varactor which is series tuned with an inductor. The impedance of the series tuned circuit is transformed to match the input impedance of the transistor by a microstrip circuit. Microstrip isolation circuits are utilized to couple appropriate bias signals to the emitter and the base to establish the proper operating point for the bipolar transistor. The output signal is taken from the base circuit of the transistor through the series combination of two microstrip circuits and a capacitor. A second varactor is loosely coupled to the base circuit of the transistor to provide for fine tuning.

Abstract: A microwave oscillator circuit comprises a micro-strip line having a substrate of a dielectric material, a semiconductor such as a Gunn diode or an FET, and a dielectric resonator connected to the micro-strip line as a resonator circuit. A hole is formed in the substrate beside the micro-strip line, or the substrate is cut off to provide a recess. Through this hole or recess, as the case may be, the dielectric resonator is directly secured to the metal casing supporting the micro-strip line on the opposite side thereof or to the grounding conductor of the micro-strip line.

Abstract: An apparatus for characterizing a surface anomaly in an electrically conductive sample includes an oscillator with an amplifier for supplying gain to the oscillator, a feedback loop linking the input and output of the amplifier, a two port ferromagnetic resonator connected within the loop to modulate the level and frequency of oscillation of the oscillator in response to eddy currents induced in the surface of the sample by the resonator, a variable attenuator connected within the loop to adjust the power level of the oscillator, and an adjustable phase shifter connected within the loop for changing the total phase shift of the loop. A sensing circuit is operably connected to the output of the amplifier to monitor the resonance parameters of the oscillator.

Abstract: An oscillator of the "three-terminal" type, comprising for example a field effect transistor, having a narrow spectrum and electronically tunable within a very wide frequency band in spite of its narrow spectrum due to a resonator of the yttrium garnet ball type. The field effect transistor has its source connected to a dipole comprising an electronically variable reactance and its gate connected to a similar dipole. A feedback loop is also established between input and output circuits of the oscillator. Under the action of a single command, acting for example on a magnetic field, the reactances vary simultaneously. In one embodiment, a single yttrium garnet ball resonator has two conductive half loops inserted in the tuning dipole and coupling dipole of the oscillator.

Abstract: Frequency modulation of an information signal is provided by applying the signal to series connected voltage variable capacity diodes. The reactance of the diodes is coupled through a transmission line to a cavity oscillator. The varying diode reactance causes a corresponding change in the frequency of modulation of the oscillator.The improvement comprises a linearization potentiometer which couples to the diodes and provides a means to vary the effective impedance presented to the cavity oscillator such that a linear change in signal voltage applied to the diodes results in a linear change of oscillator frequency.

Abstract: A tunable microwave oscillator including a transistor with a tuning diode which form an oscillating circuit particularly for use in television tuners and which does not require an inductor. A novel combination of an oscillator and mixer is also provided and the oscillator and mixer are designed to cover broad tuning ranges.

Abstract: The components of a transistor oscillator are mounted on an end cap rotatably mounted on the outer tube of a cavity resonator which stabilizes the oscillator. The intensity with which a high frequency is applied to the cavity resonator is adjustable by rotation of the end cap.

Abstract: A circuit which modulates an r.f. carrier to produce an FM signal having a substantially linear frequency relation to an applied modulating voltage over a selected deviation bandwidth. An r.f. oscillator having an output matching circuit supplies the carrier to a modulator. The impedance of the oscillator is adjusted by the matching circuit to present a desired reactive mismatch to the modulator over the bandwidth. The modulator includes a pair of voltage dependent reactive impedance elements, oppositely biased and separated by a quarter wavelength line which acts as an impedance inverter. A modulating voltage applied to both of the elements causes a reactive imbalance therebetween, affecting either a net inductive or capacitive change in the load impedance presented to the oscillator. The center frequency of the circuit reacts in a substantially linear manner to the modulating voltage over the deviation bandwidth.

Abstract: An SHF band oscillation circuit using a field effect transistor (FET) having a feedback path between gate and drain or source and a resonator connected to the gate. Impedances connected to the respective terminals of the FET comprise microstrip lines. A gate bias circuit includes a temperature-sensitive semiconductor device so that a gate bias is changed with the change in ambient temperature. In this manner, the change of oscillation frequency which would otherwise occur by the change of the ambient temperature is compensated. The resonator connected to the gate comprises a dielectric resonator to further stabilize the oscillation frequency.

Abstract: A microwave oscillator including a tuning varactor and a transistor in a thin film series resonant circuit.

Abstract: A tunable microwave oscillator including a transistor with a tuning diode which form an oscillating circuit particularly for use in television tuners and which does not require an inductor. A novel combination of an oscillator and mixer is also provided and the oscillator and mixer are designed to cover broad tuning ranges.

Abstract: Dielectric resonator stabilized micro-strip oscillators in which micro-strip lines are provided to the first, second and third terminals of the active element for oscillation and in which a dielectric resonator coupled at a predetermined position to one of the micro-strip lines which is not used as an output terminal is disclosed. In the integrated microwave oscillator, there is an active element for oscillation such, for example, as GaAs-FET having first, second and third terminals. Micro-strip lines connect to the first and third terminals, and a micro-strip line connected between the first and third terminals form a feedback circuit, together with the first mentioned micro-strip lines. A dielectric resonator is coupled to one of these micro-strip lines which is not used as an output terminal at a predetermined location.

Abstract: An RF oscillator and modulator especially useful for UHF applications. The oscillator may comprise a series-tuned Colpitts circuit with the tuned circuit including microstrip transmission lines as impedance elements. The modulator includes a pair of serially connected diodes with the common terminal of the diodes receiving a modulation signal which varies the total current through the diodes. The diodes function as current-variable resistances to attenuate the carrier frequency signal in response to the modulation signal.

Abstract: In one embodiment, a resonant circuit comprising a ground-contacting conductive member, a dielectric layer provided on the ground-contacting conductive layer, a ground-contacting member provided on the dielectric layer and electrically connected to the ground-contacting conductive member, and a U-shaped microstrip line formed on the dielectric layer. Both ends of the U-shaped microstrip line face the ground-contacting member. One of them is connected to the ground-contacting member through a lumped capacitor, and the other end is directly connected to the ground-contacting member.

Abstract: A circuit for synchronizing an oscillator keyed by a pulse is provided with a low amplitude reference oscillation. A phase shift regulating loop has a phase discriminator which is fed, on one hand, with a branched component of the oscillator output and, on the other hand, with the reference oscillation. The phase discriminator compares the phases of the two oscillators and emits a resultant regulating voltage an adjustable reactance for controlling the oscillator frequency during the leading edge of the keying pulse. A phase shift device, adjustable over 180.degree., is connected between the oscillator and the phase discriminator, the phase discriminator having a high-ohmic output which is connected, via an impedance converter, to the adjustable reactance.

Abstract: A pulse-modulated high-frequency transmitter is pulse keyed and has a high pulse power. A self-sustained transistor oscillator has a grounded base with a collector-emitter feedback in the form of a strip line with a length of half a wavelength and a serially-connected capacitor. A pulse modulator connected to the oscillator includes an output stage constructed as a constant current source which is keyed by a pulse generator.

Abstract: A semiconductor oscillator circuit for very short waves, particularly for UHF, employing the stripline technique and utilizing capacitive voltage division in order to provide feedback. The stripline technique is employed at least, for all the discrete frequency determining (capacitive and inductive) components of the circuit and for the feedback path of the circuit. The series connection of the two capacitors forming the capacitive voltage divider is connected in parallel with a further capacitor, formed in stripline technique, whose capacitance lies in the same order of magnitude as that of one of the capacitors of the capacitive voltage divider and the two capacitors which have the same order of magnitude in capacitance are formed by two conductor electrodes which are parallel to each other at a very small mutual distance with respect to their geometric dimensions, which have a length and width corresponding to their capacitance, and which have a common return electrode.

Abstract: A broad-band cavity-tuned transistor oscillator includes a field effect device having capacitive feedback from source to drain and having a gate capacitively coupled to a cavity for producing an output signal that is frequency selectable according to cavity resonance, which resonance is determined by translation position of a mechanical tuning plunger coupled to the cavity and the degree of capacitive feedback.

Abstract: The embedding network of a microwave oscillator comprises three lengths of parallel conductors supported above a ground plane and having odd and even mode short circuits thereon. Two of the conductors are connected to different ones of the electrodes of a bipolar microwave transistor which has a third electrode connected to ground. A load is connected between the third conductor and ground. Physical and electrical characteristics of the network are varied to cause parameters thereof to be desired values which yield maximum output power and oscillation at desired frequencies.

Abstract: An apparatus for stabilizing microwave oscillator circuits is disclosed. The apparatus comprises a dielectric resonator positioned in the vicinity of a microwave semiconductive device for completing a feedback path between two electrode circuits of the device. A dielectric spacer is positioned between the resonator and the electrodes for supporting the resonator and controlling the magnitude of coupling between the two electrode circuits. A folded mechanical structure is described wherein the oscillating device and the resonator are located at the fold for improving the frequency stability of the oscillator. The microwave semiconductive device may be a bipolar transistor or a field effect transistor.

Abstract: A transistor oscillator for microwave frequency ranges has a transistor with interelectrode capacitances used for feedback. A series connection of a voltage controlled variable capacitor and line element are connected to the collector of the transistor as a frequency determining element. A line element is connected to the base for feedback and bias means are connected to the base and emitter through high frequency choking means constructed of two quarter wavelength line elements, one of which is arranged in no-load fashion. An attenuation network for frequency selection action is connected to the collector feedback path to dampen the oscillating circuit and prevent frequency jumping of the oscillator outside of the band intended for useful operation.

Abstract: A solid state klystron comprising a switching regulator, power source, tuning adapter, and solid state oscillator utilizing supply voltages identical to those of a standard tube-type klystron.

Abstract: A microwave oscillator using a transit-time transistor structure with a space charge zone, is provided. The negative resistance introduced by the transit-time in the space charge zone is utilized in a circuit connected with emitter and collector, the base being direct-biased and not passing the high frequency. To avoid a short-circuiting by the parasitic base-collector capacitance, a transmission line is connected in parallel across the base and collector terminals. The input impedance of this line is adjusted by short-circuiting this line at a distance close to a quarter of wavelength, thus creating an input inductance able to compensate the effect of the base-collector capacitance.

Abstract: A temperature compensated cavity oscillator comprising a resonant coaxial cavity of which the outer conductor is constructed of dissimilar materials. The end walls and adjacent portion of the outer conductor of the coaxial cavity are made of a first conductive material having a first temperature coefficient of expansion. Interposed between the first conductive material of the outer conductor, the middle portion of the outer conductor is made from a second conductive material having a second temperature coefficient of expansion. A tuning rod is displaced through the middle portion of the cavity and capacitively coupled to a center coaxial conductor to provide mechanical tuning of the oscillation frequency and for varying the frequency of the cavity with temperature such that the temperature characteristics of the oscillating element are compensated to produce a substantially stable oscillating frequency.

Abstract: A transistor oscillator for the microwave band, utilizing CLAPP-circuit configuration, in which a small additional capacitance is connected in series with collector-base capacitance and is disposed between the base and ground. The additional capacitance may be in the form of a trimming capacitor, varactor elements or a line section having a length of less than .lambda./4, and where strip line technology is employed high frequency filter chokes may be employed in the form of line sections, each of a length of .lambda./4 whose ends are short circuited over blocking capacitors.

Abstract: A high efficiency switching drive for a resonate power transformer having the ability to maintain a constant output voltage over a wide range of source voltage variation while maintaining good power conversion efficiency is provided. A transistorized class-C oscillator has means to saturate the transistors during conduction time to allow the transistor voltage to remain small as opposed to a current source as in the conventional class-C oscillator.

Abstract: A high efficiency switching drive for a resonate power transformer having the ability to maintain a constant output voltage over a wide range of source voltage variation while maintaining good power conversion efficiency is provided. A transistorized class-C oscillator has means to saturate the transistors during conduction time to allow the transistor voltage to remain small as opposed to a current source as in the conventional class-C oscillator.