Utilizing Electromechanical Transducer Patents (Class 333/133)
  • Patent number: 12034428
    Abstract: Acoustic filters are disclosed. An acoustic filter device includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces and a thickness ts, the back surface attached to the surface of the substrate except for portions of the piezoelectric plate forming a plurality of diaphragms that span respective cavities in the substrate. A conductor pattern is formed on the front surface of the piezoelectric plate, the conductor pattern comprising a plurality of interdigital transducers (IDTs) of a plurality of acoustic resonators, interleaved fingers of each IDT of the plurality of IDTs disposed on a respective diaphragm of the plurality of diaphragms. The interleaved fingers of all of the plurality of IDTs are substantially aluminum with a common thickness tm, where 0.12 ts?tm?0.32 ts.
    Type: Grant
    Filed: December 2, 2020
    Date of Patent: July 9, 2024
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Viktor Plesski, Jesson John, Bryant Garcia
  • Patent number: 12034429
    Abstract: This invention focuses on minimizing the hot spots on a filter chip by creating thermal radiators using the mechano-acoustic structures and connection circuitry. A gradual increase of metal to wafer relation is made to provide better heat dissipation and heat sinking. Preferably the shunt lines of the ladder type arrangement of SAW resonators (RS1, RS2, RS3) comprise a broadened section (BBCN).
    Type: Grant
    Filed: January 24, 2020
    Date of Patent: July 9, 2024
    Assignee: RF360 Singapore Pte. Ltd.
    Inventors: Kamran Cheema, Bambang Kunardi, Yu Jen Chong, Chong Choon Lee
  • Patent number: 12028049
    Abstract: Radio frequency filters are disclosed. A filter includes a first transversely-excited film bulk acoustic resonator (XBAR) having a first sub-resonator and a second sub-resonator connected in parallel. A pitch of the first sub-resonator is not equal to a pitch of the second sub-resonator and/or a mark of the first sub-resonator is not equal to a mark of the second sub-resonator.
    Type: Grant
    Filed: November 7, 2021
    Date of Patent: July 2, 2024
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Douglas Jachowski, Greg Dyer
  • Patent number: 12028048
    Abstract: A resonance apparatus that processes an electrical loss using a conductive material and a method of manufacturing the resonance apparatus are provided. The resonance apparatus includes a lower electrode formed at a predetermined distance from a substrate, and a piezoelectric layer formed on the lower electrode. The resonance apparatus further includes an upper electrode formed on the piezoelectric layer, and a conductive layer formed on the upper electrode or the lower electrode.
    Type: Grant
    Filed: April 30, 2021
    Date of Patent: July 2, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hosoo Park, Duck Hwan Kim, Chul Soo Kim, Sang Uk Son, In Sang Song, Jeashik Shin, Moonchul Lee
  • Patent number: 12025516
    Abstract: The present disclosure provides a new and improved temperature compensated surface-launched acoustic wave (SAW) strain sensor using multiple reflectors in SAW devices mounted on a split-carrier package that provides complete isolation from strain for a temperature sensing portion of the device, while exposing a strain sensing portion of the device to both strain and temperature, with the influence of temperature being common to the various portions of the device, and a single acoustic reference with respect to which multiple differential acoustic measurements can be made, to provide inherently temperature-compensated strain measurements.
    Type: Grant
    Filed: September 22, 2020
    Date of Patent: July 2, 2024
    Assignee: SenSanna Incorporated
    Inventors: Justin Bond, Dana Y. G. Tucker, Jacqueline H. Hines
  • Patent number: 12028044
    Abstract: A filter device has a first piezoelectric plate spanning a first and second cavity of a substrate. A first and second interdigital transducer (IDT) are on a front surface of the first piezoelectric plate over the first and second cavity. A dielectric layer is bonded to the first piezoelectric plate and covers the first IDT and second IDT. A second piezoelectric plate is bonded to a front surface of the dielectric layer over the first cavity and the second cavity. A second dielectric layer is formed on a front surface of the second piezoelectric plate over the first cavity but not over the second cavity. The thickness of the dielectric layer, the first piezoelectric plate and the second piezoelectric plate can be selected to tune a shunt resonator over the first cavity and a series resonator over the second cavity to function at 15 GHz.
    Type: Grant
    Filed: December 23, 2020
    Date of Patent: July 2, 2024
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Bryant Garcia, Pintu Adhikari, Andrew Guyette
  • Patent number: 12021509
    Abstract: Aspects of the disclosure relate to wireless communication, and high-frequency filters with resonators. One example is a frequency band filter circuit having a split resonator. The split resonator comprises a resonator including a first section of a shared input busbar, a first section of a shared output busbar, and an electrode structure between the first section of the shared input busbar and the first section of the shared output busbar, the electrode structure configured for a resonance. The split resonator also comprises a detuned resonator. The detuned resonator includes a second section of the shared input busbar, a second section of the shared output busbar, and a detuned electrode structure between the second section of the shared input busbar and the second section of the shared output busbar, the detuned electrode structure configured for a detuned resonance different from the resonance.
    Type: Grant
    Filed: January 22, 2021
    Date of Patent: June 25, 2024
    Assignee: RF360 Singapore Pte. Ltd.
    Inventors: Jiman Yoon, Jürgen Kiwitt, Robert Koch, Maximilian Pitschi, Gerhard Kloska
  • Patent number: 12016247
    Abstract: A package that includes an integrated device, an integrated passive device and a void. The integrated device is configured as a filter. The integrated device includes a substrate comprising a piezoelectric material, and at least one metal layer coupled to a first surface of the first substrate. The integrated passive device is coupled to the integrated device. The integrated passive device is configured as a cap for the integrated device. The void is located between the integrated device and the integrated passive device.
    Type: Grant
    Filed: August 27, 2020
    Date of Patent: June 18, 2024
    Assignee: QUALCOMM INCORPORATED
    Inventors: Changhan Hobie Yun, Nosun Park, Daniel Daeik Kim, Paragkumar Ajaybhai Thadesar, Sameer Sunil Vadhavkar
  • Patent number: 12015391
    Abstract: A filter device has a substrate with a first cavity and a second cavity on a single die; and a bonding layer formed on the substrate but not spanning the first cavity or the second cavity. A piezoelectric plate is bonded to the bonding layer and spans the first and the second cavity. However, excess portions of piezoelectric plate are removed that extend a certain length past the perimeter of the first cavity and of the second cavity. Excess portions may be piezoelectric material that extends in the length and width direction past the perimeter of a cavity by more than between 2 and 25 percent of the cavity perimeter. An interdigital transducer (IDT) is on a front surface of the piezoelectric plate and having interleaved fingers over the first cavity.
    Type: Grant
    Filed: August 23, 2022
    Date of Patent: June 18, 2024
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Ventsislav Yantchev
  • Patent number: 11996828
    Abstract: A filter device includes a piezoelectric substrate including a high acoustic velocity material layer and a piezoelectric layer, and series and parallel arm resonators on the piezoelectric substrate. The parallel arm resonator includes a first IDT electrode on the piezoelectric substrate, and the series arm resonator includes a second IDT electrode on the piezoelectric substrate. First and second busbars of the first IDT electrode include opening formation regions, and an occupancy ratio of areas of openings in the first and second busbars of the first IDT electrode is greater than an occupancy ratio of areas of openings in first and second busbars of the second IDT electrode. In the first and second IDT electrodes, low acoustic velocity regions sandwich a central region. A high acoustic velocity region is provided in the opening formation region of each of the first and second busbars in the first IDT electrode.
    Type: Grant
    Filed: December 20, 2021
    Date of Patent: May 28, 2024
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Jin Yokoyama
  • Patent number: 11984298
    Abstract: An apparatus for providing signals to a device may include one or more radio frequency signal generators, and electrically-small transmission line, which coupled signals from the one or more RF signal generators to a fabrication chamber. The apparatus may additionally include a reactive circuit to transform impedance of the electrically-small transmission line from a region of relatively high impedance-sensitivity to region of relatively low impedance-sensitivity.
    Type: Grant
    Filed: December 2, 2020
    Date of Patent: May 14, 2024
    Assignee: Lam Research Corporation
    Inventors: Eller Y. Juco, Thomas Lee Frederick, Karl Frederick Leeser, Paul Konkola
  • Patent number: 11984913
    Abstract: A multiplexer includes a first filter on a first path, a second filter on a second path, and a third filter on a third path. A frequency of intermodulation distortion generated by a transmission signal within a pass band of the first filter and a transmission signal within a pass band of the second filter is within a pass band of the third filter. The first filter includes one or more series resonators on the first path and one or more parallel resonators on one or more paths connecting one or more nodes on the first path to a ground. A relative permittivity of a resonator of the one or more series resonators and the one or more parallel resonators that is closest to a common terminal is lowest among relative permittivities of the resonators.
    Type: Grant
    Filed: June 8, 2021
    Date of Patent: May 14, 2024
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Tetsuro Okuda
  • Patent number: 11984924
    Abstract: A transmit/receive module includes plural duplexers, a power amplifier, and a sending transmission line. The plural duplexers operate in bands different from each other and each includes a transmit filter and a receive filter. The power amplifier amplifies signals of pass bands of the plural transmit filters and outputs the amplified signals. The sending transmission line is connected to the plural transmit filters. The signals of the pass bands of the plural transmit filters output from the power amplifier are transmitted through the sending transmission line.
    Type: Grant
    Filed: December 12, 2019
    Date of Patent: May 14, 2024
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Seima Kondo, Satoshi Tanaka, Satoshi Arayashiki, Hiroyuki Furusato, Jin Yokoyama, Toru Yamaji, Akio Kaneda, Kiwamu Sakano, Junichi Yoshioka, Tatsuya Tsujiguchi, Atushi Ono
  • Patent number: 11979137
    Abstract: A high-frequency module (1) includes a mounting substrate (90), a duplexer (60L) arranged on the mounting substrate (90), a duplexer (60H) arranged on the mounting substrate (90) and having a pass band with a higher frequency than a pass band of the duplexer (60L), and a semiconductor control IC (40) arranged on the mounting substrate (90) and stacked with the duplexer (60L) of the duplexers (60L and 60H).
    Type: Grant
    Filed: July 29, 2021
    Date of Patent: May 7, 2024
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Hisanori Murase
  • Patent number: 11973487
    Abstract: An acoustic wave device includes an IDT electrode on a piezoelectric body and the IDT electrode includes first and second busbars, and first and second electrode fingers. A first dielectric film extends from a region between tip end portions of the first electrode fingers and the piezoelectric body to a region between the second busbar and the piezoelectric body with a first gap in between. The second electrode fingers are in direct contact with the piezoelectric body at a center of an overlap width, and a permittivity of the first dielectric film is lower than a permittivity of the piezoelectric body.
    Type: Grant
    Filed: February 18, 2021
    Date of Patent: April 30, 2024
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Katsuya Daimon
  • Patent number: 11967947
    Abstract: Aspects of this disclosure relate to a multiplexer, such as a duplexer, a quadplexer, a hexaplexer, or the like. The multiplexer includes acoustic wave filters coupled to a common node. A first acoustic wave filter of the acoustic wave filters includes acoustic wave resonators of a first type and a series acoustic wave resonator of a second type coupled between the acoustic wave resonators of the first type and the common node.
    Type: Grant
    Filed: April 13, 2021
    Date of Patent: April 23, 2024
    Assignee: Skyworks Solutions, Inc.
    Inventor: Joshua James Caron
  • Patent number: 11967941
    Abstract: An acoustic wave device includes a mounting substrate, and an acoustic wave element chip. The mounting substrate includes a first major surface with a bump-mounting electrode land thereon, and a second major surface facing the first major surface. The acoustic wave element chip includes a piezoelectric substrate including a major surface, and a functional electrode and a bump located over the major surface of the piezoelectric substrate. The bump is joined to the bump-mounting electrode land. A heat radiation pattern is located over the first major surface of the mounting substrate and located within a region facing the functional electrode of the acoustic wave element chip. The heat radiation pattern is connected to an internal layer portion of the mounting substrate between the first and second major surfaces, and not electrically connected to the bump-mounting electrode land on the first major surface.
    Type: Grant
    Filed: May 10, 2021
    Date of Patent: April 23, 2024
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Toshishige Koreeda
  • Patent number: 11967943
    Abstract: An acoustic resonator is fabricated by forming a patterned first photoresist mask on a piezoelectric plate at locations of a desired interdigital transducer (IDT) pattern. An etch-stop layer is then deposited on the plate and first photoresist mask. The first photoresist mask is removed to remove parts of the etch-stop and expose the plate. An IDT conductor material is deposited on the etch stop and the exposed plate. A patterned second photoresist mask is then formed on the conductor material at locations of the IDT pattern. The conductor material is then etched over and to the etch-stop to form the IDT pattern which has interleaved fingers on a diaphragm to span a substrate cavity. A portion of the plate and the etch-stop form the diaphragm. The etch-stop and photoresist mask are impervious to this etch. The second photoresist mask is removed to leave the IDT pattern.
    Type: Grant
    Filed: February 17, 2022
    Date of Patent: April 23, 2024
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Patrick Turner, Ryo Wakabayashi
  • Patent number: 11962283
    Abstract: Piston mode Lamb wave resonators are disclosed. A piston mode Lamb wave resonator can include a piezoelectric layer, such as an aluminum nitride layer, and an interdigital transducer on the piezoelectric layer. The piston mode Lamb wave resonator has an active region and a border region, in which the border region has a velocity with a lower magnitude than a velocity of the active region. The border region can suppress a transverse mode.
    Type: Grant
    Filed: December 1, 2022
    Date of Patent: April 16, 2024
    Assignee: Skyworks Solutions, Inc.
    Inventors: Jie Zou, Jiansong Liu, Gong Bin Tang, Chih-Ming Lin, Chun Sing Lam
  • Patent number: 11962285
    Abstract: An acoustic wave device includes an antenna terminal, a signal terminal, and a plurality of resonators that are provided on a piezoelectric substrate. The plurality of resonators include a plurality of series arm resonators on a series arm, and the duty of an IDT electrode of the series arm resonator closest to the antenna terminal among the plurality of series arm resonators is smaller than the duty of an IDT electrode of at least one series arm resonator among the other series arm resonators.
    Type: Grant
    Filed: December 30, 2020
    Date of Patent: April 16, 2024
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Junpei Yasuda
  • Patent number: 11962288
    Abstract: A surface elastic wave filter has resonant cavities and comprises a composite substrate formed of a base substrate and a piezoelectric upper layer; at least one input electroacoustic transducer and an output electroacoustic transducer, arranged on the upper layer, and at least one internal reflecting structure, arranged between the input electroacoustic transducer and the output electroacoustic transducer. The internal reflecting structure comprises a first structure comprising at least one reflection grating having a first period and a second structure comprising at least one reflection grating having a second period, the first period being greater than the second period.
    Type: Grant
    Filed: September 15, 2022
    Date of Patent: April 16, 2024
    Assignee: Soitec
    Inventors: Eric Michoulier, Sylvain Ballandras, Thierry LaRoche
  • Patent number: 11955952
    Abstract: Filter devices. A first chip includes a first base, a first piezoelectric membrane having a first thickness, and a first acoustic Bragg reflector sandwiched between the first piezoelectric membrane and the first base. A first interdigital transducer (IDT) of a first solidly-mounted membrane resonator is formed on a surface of the first piezoelectric membrane. A second chip includes a second base, a second piezoelectric membrane having a second thickness less than the first thickness, and a second acoustic Bragg reflector sandwiched between the second piezoelectric membrane and the second base. A second IDT of a second solidly-mounted membrane resonator is formed on a surface of the second piezoelectric membrane. A circuit card is coupled to the first chip and the second chip, the circuit card including at least one conductor for making an electrical connection between the first IDT and the second IDT.
    Type: Grant
    Filed: November 13, 2020
    Date of Patent: April 9, 2024
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Sean McHugh, Gregory L. Hey-Shipton, Garrett Williams
  • Patent number: 11956069
    Abstract: A multiplexer (1) used in a communication device (5) includes an antenna (21) for a first frequency band group including 5GNR and an antenna (22) for a second frequency band group and includes a filter (12) for a first communication band and a filter (13) for a second communication band. The second frequency band group is higher than the first communication band, the second communication band is lower than the first communication band, the filter (12) includes a resonant circuit (31), an inductor (L1) connected to a node (n1) in a series arm path, and an inductor (L2) magnetically coupled with the inductor (L1).
    Type: Grant
    Filed: April 28, 2021
    Date of Patent: April 9, 2024
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Hirotsugu Mori
  • Patent number: 11956003
    Abstract: A radio frequency module includes a signal input terminal, a signal output terminal, a low noise amplifier configured to amplify a radio frequency reception signal input from the signal input terminal, and a first filter connected between an output terminal of the low noise amplifier and the signal output terminal and having a pass band including a frequency of the radio frequency reception signal.
    Type: Grant
    Filed: April 5, 2021
    Date of Patent: April 9, 2024
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Masashi Hayakawa
  • Patent number: 11942438
    Abstract: An electronic component includes a first substrate having a substantially quadrangular planar shape and having a first surface and a second surface, the first surface and the second surface being opposite to each other, an element disposed on the first surface, four first terminals located adjacent to four corners on the second surface, respectively, and a second terminal located between the first terminals at respective ends of each of two sides opposite to each other of the second surface, an area of the second terminal being smaller than an area of each of the first terminals at the respective ends of each of the two sides, a width of the second terminal in an extension direction of each of the two sides being equal to or less than a width of each of the first terminals at the respective ends of each of the two sides in the extension direction.
    Type: Grant
    Filed: February 16, 2021
    Date of Patent: March 26, 2024
    Assignee: TAIYO YUDEN CO., LTD.
    Inventors: Motoi Yamauchi, Masato Ito
  • Patent number: 11942921
    Abstract: In an acoustic wave device, an IDT electrode is located on a piezoelectric layer. A high-acoustic-velocity member is positioned on an opposite side of the piezoelectric layer from the IDT electrode. An acoustic velocity of a bulk wave propagating through the high-acoustic-velocity member is higher than an acoustic velocity of an acoustic wave propagating through the piezoelectric layer. A low-acoustic-velocity film is provided between the high-acoustic-velocity member and the piezoelectric layer. An acoustic velocity of a bulk wave propagating through the low-acoustic-velocity film is lower than the acoustic velocity of the bulk wave propagating through the piezoelectric layer. A dielectric film is located on the piezoelectric layer so as to cover the IDT electrode. In the acoustic wave device, a Young's modulus of the dielectric film is larger than a Young's modulus of the low-acoustic-velocity film.
    Type: Grant
    Filed: June 7, 2021
    Date of Patent: March 26, 2024
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Yasumasa Taniguchi, Katsuya Daimon
  • Patent number: 11942917
    Abstract: The present disclosure provides a film bulk acoustic resonator and its fabrication method. The fabrication method includes providing a first substrate, and sequentially forming a first electrode layer, a piezoelectric material layer, and a second electrode layer, on the first substrate; forming a support layer on the second electrode layer and forming a cavity with a top opening in the support layer, where the cavity passes through the support layer; providing a second substrate and bonding the second substrate with the support layer; removing the first substrate; and patterning the first electrode layer, the piezoelectric material layer, and the second electrode layer to form a first electrode, a piezoelectric layer, and a second electrode.
    Type: Grant
    Filed: March 1, 2021
    Date of Patent: March 26, 2024
    Assignee: Ningbo Semiconductor International Corporation
    Inventor: Guohuang Yang
  • Patent number: 11942923
    Abstract: An RF filter (BPF) with an increased bandwidth is provided. The filter comprises a half-lattice topology and a phase shifter (PS) comprising inductively coupled inductance elements in a parallel branch parallel to a first segment (S1) of a signal path (SP) between a first port (P1) and a second port (P2) of the filter.
    Type: Grant
    Filed: March 16, 2020
    Date of Patent: March 26, 2024
    Assignee: RF360 Singapore Pte. Ltd.
    Inventor: Marc Esquius Morote
  • Patent number: 11929725
    Abstract: Provided by a bandpass filter circuit and a multiplexer. The bandpass filter circuit includes at least one electromagnetic LC filter circuit and at least one acoustic wave resonance unit. The at least one acoustic wave resonance unit includes an input port, an output port, at least one circuit element and at least three resonators. The at least one electromagnetic LC filter circuit is electrically connected to the at least one acoustic wave resonance unit, and the at least three resonators include at least one first resonator and at least one second resonator. In a case where the at least one first resonator includes one first resonator, the first resonator is connected in series between the input port and the output port.
    Type: Grant
    Filed: October 10, 2020
    Date of Patent: March 12, 2024
    Assignee: ANHUI ANUKI TECHNOLOGIES CO., LTD.
    Inventors: Chenggong He, Xiaodong Wang, Chengjie Zuo, Jun He
  • Patent number: 11929735
    Abstract: Acoustic resonator devices, filter devices, and methods of fabrication are disclosed. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces. The back surface is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The IDT is configured to excite a primary acoustic mode in the diaphragm in response to a radio frequency signal applied to the IDT. At least a portion of an edge of the diaphragm is at an oblique angle to the fingers.
    Type: Grant
    Filed: December 14, 2020
    Date of Patent: March 12, 2024
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Ventsislav Yantchev, Patrick Turner, Viktor Plesski, Julius Koskela, Robert B. Hammond
  • Patent number: 11929724
    Abstract: A method for fabricating a surface acoustic wave (SAW) device includes forming an interdigital transducer (IDT) having lead-out portions and arrays of interdigital electrodes on a substrate, wherein the interdigital electrodes include central portions, end portions, and intermediate portions between the end portions and the lead-out portions; forming a protective layer on the IDT; forming a first temperature compensation layer on the protective layer; forming openings in the first temperature compensation layer to expose portions of the protective layer on the central portions and the intermediate portions of the interdigital electrodes; and etching the exposed portions of the protective layer, and etching the central portions and the intermediate portions of the interdigital electrodes to a preset thickness, to form protruding structures at the end portions of the interdigital electrodes.
    Type: Grant
    Filed: May 30, 2023
    Date of Patent: March 12, 2024
    Assignee: Shenzhen Newsonic Technologies Co., Ltd.
    Inventor: Jian Wang
  • Patent number: 11929734
    Abstract: Certain aspects of the present disclosure provide a surface acoustic wave (SAW) resonator with piston mode design and electrostatic discharge (ESD) protections. An example electroacoustic device generally includes a piezoelectric material and a first electrode structure disposed above the piezoelectric material. The first electrode structure comprises first electrode fingers arranged within an active region having a first region and a second region. At least one of the first electrode fingers has at least one of a different width or a different height in the first region than in the second region, and the first electrode fingers comprise a first electrode finger that has a width or height in the second region that is less than a corresponding width or height of the at least one of the first electrode fingers in the second region.
    Type: Grant
    Filed: January 29, 2021
    Date of Patent: March 12, 2024
    Assignee: RF360 Singapore Pte. Ltd.
    Inventors: Volker Schulz, Philipp Michael Jaeger
  • Patent number: 11923824
    Abstract: Embodiments of this disclosure relate to reducing coupling between acoustic wave resonators. An isolation region of a substrate can be located between acoustic wave resonators. The isolation region can reduce capacitive coupling through the substrate between the acoustic wave resonators. In certain embodiments, the isolation region can be located between acoustic wave resonators of different filters to thereby increase isolation between the filters.
    Type: Grant
    Filed: September 7, 2022
    Date of Patent: March 5, 2024
    Assignee: Skyworks Solutions, Inc.
    Inventor: Joshua James Caron
  • Patent number: 11916539
    Abstract: Band N77 bandpass filters include a first plurality of transversely-excited film bulk acoustic resonators (XBARs) on a first chip comprising a first rotated YX-cut lithium niobate piezoelectric plate having a thickness less than or equal to 535 nm, and a second plurality of XBARs on a second chip comprising a second rotated YX-cut lithium niobate piezoelectric plate having a thickness greater than or equal to 556 nm. A circuit card is coupled to the first chip and the second chip. The circuit card includes conductors for making electrical connections between the first chip and the second chip.
    Type: Grant
    Filed: March 1, 2021
    Date of Patent: February 27, 2024
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Doug Jachowski, Ventsislav Yantchev, Bryant Garcia, Patrick Turner
  • Patent number: 11916536
    Abstract: A filter device includes a filter between an input terminal and an output terminal, and an additional circuit connected in parallel with the filter between the input terminal and the output terminal. The additional circuit includes at least two longitudinally coupled resonators connected in parallel with each other and including longitudinally coupled resonators, and at least one capacitance element between the input terminal and the at least two longitudinally coupled resonators or between the output terminal and the at least two longitudinally coupled resonators. The average pitch of a plurality of electrode fingers of IDT electrodes of the longitudinally coupled resonator and the average pitch of a plurality of electrode fingers of IDT electrodes of the longitudinally coupled resonator are different from each other.
    Type: Grant
    Filed: February 9, 2021
    Date of Patent: February 27, 2024
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Toshiaki Takata
  • Patent number: 11916533
    Abstract: Surface acoustic wave devices and related methods. In some embodiments, a surface acoustic wave device for providing resonance of a surface acoustic wave having a wavelength ? can include a quartz substrate and a piezoelectric plate formed from LiTaO3 or LiNbO3 disposed over the quartz substrate. The piezoelectric plate can have a thickness greater than 2?. The surface acoustic wave device can further include an interdigital transducer electrode formed over the piezoelectric plate. The interdigital transducer electrode can have a mass density ? in a range 1.50 g/cm3<??6.00 g/cm3, 6.00 g/cm3<??12.0 g/cm3, or 12.0 g/cm3<??23.0 g/cm3, and a thickness greater than 0.148?, greater than 0.079?, or greater than 0.036?, respectively.
    Type: Grant
    Filed: June 7, 2022
    Date of Patent: February 27, 2024
    Inventors: Michio Kadota, Shuji Tanaka, Hiroyuki Nakamura
  • Patent number: 11909374
    Abstract: Acoustic resonators are disclosed. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces. The back surface is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the piezoelectric plate. The IDT includes: a first busbar and a second busbar disposed on respective portions of the piezoelectric plate other than the diaphragm; a first set of elongate fingers extending from the first bus bar onto the diaphragm; and a second set of elongate fingers extending from the second bus bar onto the diaphragm, the second set of elongate fingers interleaved with the first set of elongate fingers.
    Type: Grant
    Filed: September 1, 2022
    Date of Patent: February 20, 2024
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Greg Dyer, Bryant Garcia, Doug Jachowski, Robert Hammond, Neal Fenzi, Ryo Wakabayashi
  • Patent number: 11909372
    Abstract: A differential combiner circuit (200) comprises three ports each has two terminals (1a, 1b, 2a, 2b, 3a, 3b). The differential combiner circuit (200) further comprises a first sub-circuit comprising a first inductor (L1) connected between the first terminals (1a, 2a) of the first and second ports, and a first capacitor (C1) connected between the first terminals (2a, 3a) of the second and third ports; a second sub-circuit comprising a second inductor (L2) connected between the second terminals (1b, 2b) of the first and second ports, and a second capacitor (C2) connected between the second terminals (2b, 3b) of the second and third ports.
    Type: Grant
    Filed: February 14, 2019
    Date of Patent: February 20, 2024
    Assignee: TELEFONAKTIEBOLAGET LM ERICSSON (PUBL)
    Inventor: Henrik Sjöland
  • Patent number: 11909382
    Abstract: A multiplexer includes a common terminal, a first reception output terminal, a second reception output terminal, a first filter that is connected between the common terminal and the first reception output terminal, a second filter that is connected between the common terminal and the second reception output terminal and that has a passband different from that of the first filter, and an impedance matching circuit that is disposed between the common terminal and the second filter. The impedance matching circuit includes a serial arm resonator disposed in series on a path connecting the common terminal to the second filter.
    Type: Grant
    Filed: July 30, 2021
    Date of Patent: February 20, 2024
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Masakazu Tani
  • Patent number: 11901877
    Abstract: There are disclosed matrix filters having an input port and sub-filters connected between the input port and respective output ports. Each of the sub-filters includes a ladder circuit with n transversely-excited film bulk acoustic resonator (XBAR) series elements and n?1 capacitor shunt elements, where n, the order of the sub-filter, is an integer greater than 2. The sub-filters having noncontiguous passbands.
    Type: Grant
    Filed: September 21, 2022
    Date of Patent: February 13, 2024
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Andrew Guyette, Neal Fenzi, Michael Eddy, Bryant Garcia
  • Patent number: 11901879
    Abstract: A multiplexer (1) includes: a filter (13L) that is arranged between a common terminal (100) and an input/output terminal (130) and that has a first pass band; a filter (12H) that is arranged between the common terminal (100) and an input/output terminal (120), that is formed of at least one acoustic wave resonator, and that has a second pass band located at a higher frequency than the first pass band; and a capacitor (C2) that is serially arranged on a connection path between the common terminal (100) and the filter (12H). When the filter (12H) is regarded as a capacitance, the Q value of the capacitor (C2) in the first pass band is higher than the Q value of the capacitance in the first pass band.
    Type: Grant
    Filed: December 10, 2020
    Date of Patent: February 13, 2024
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Hirotsugu Mori, Masakazu Tani
  • Patent number: 11894827
    Abstract: An acoustic wave filter device is disclosed. The device includes an acoustic wave filter element, and a first resonator and a second resonator coupled to the acoustic wave filter element. The acoustic wave filter element includes interdigited input electrodes and output electrodes located on a top surface of a piezoelectric layer. Each of the first and the second resonators includes a top electrode on the top surface, and a bottom electrode on the bottom surface of the piezoelectric layer. At least one of each of the first and the second resonators' electrodes is electrically connected to the acoustic wave filter element. The first resonator has a first notch in resonator impedance at a first frequency. The second resonator includes a first mass loading layer on the second resonator electrode such that the second resonator has a second notch in resonator impedance at a second frequency different from the first frequency.
    Type: Grant
    Filed: July 19, 2021
    Date of Patent: February 6, 2024
    Assignee: VTT Technical Research Centre of Finland Ltd
    Inventors: Tapani Makkonen, Markku Ylilammi, Tuomas Pensala, James Dekker
  • Patent number: 11888462
    Abstract: A bonded body includes a supporting substrate; a piezoelectric material substrate; a first bonding layer provided on the supporting substrate and having a composition of Si(1-x)Ox (0.008?x?0.408); a second bonding layer provided on the piezoelectric material substrate and having a composition of Si(1-y)Oy (0.008?y?0.408); and an amorphous layer provided between the first bonding layer and second bonding layer. The oxygen ratio of the amorphous layer is higher than the oxygen ratio of the first bonding layer and oxygen ratio of the second bonding layer.
    Type: Grant
    Filed: April 15, 2021
    Date of Patent: January 30, 2024
    Assignee: NGK INSULATORS, LTD.
    Inventors: Yudai Uno, Masashi Goto, Tomoyoshi Tai
  • Patent number: 11888460
    Abstract: Acoustic resonators and filter devices. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces. The back surface is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. A conductor pattern formed is formed on the front surface of the piezoelectric plate, including an interdigital transducer (IDT) with interleaved fingers of the IDT on the diaphragm. The substrate and the piezoelectric plate are the same material.
    Type: Grant
    Filed: August 30, 2022
    Date of Patent: January 30, 2024
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Neal Fenzi, Robert Hammond, Patrick Turner, Bryant Garcia, Ryo Wakabayashi
  • Patent number: 11881608
    Abstract: A filter device includes a first filter connected between a common terminal and a first individual terminal, and a second filter connected between the common terminal and a second individual terminal. A pass band of the second filter is in a frequency range lower than a pass band of the first filter. The first filter includes SAW resonators, at least one of which includes divided resonators connected in parallel with each other. Each of the divided resonators includes an IDT. A pitch of the IDT of one of the divided resonators is different from that of another of the divided resonators.
    Type: Grant
    Filed: November 4, 2020
    Date of Patent: January 23, 2024
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Tomoya Sato
  • Patent number: 11870414
    Abstract: A film bulk acoustic resonator (FBAR) chip and package structure with an improved temperature coefficient that is capable of being more stable with respect to surrounding temperature changes, without any decrease in performance of Q factor or k2e. The FBAR chip and package structure includes a plurality of FBARs located on a central area of one surface of a substrate and each having a bottom electrode, a piezoelectric material, and a top electrode; and a temperature compensation layer formed around the central area of one surface of the substrate.
    Type: Grant
    Filed: January 26, 2021
    Date of Patent: January 9, 2024
    Assignee: WISOL CO., LTD.
    Inventor: Young Hun Kim
  • Patent number: 11863161
    Abstract: An acoustic wave filter includes a first resonance circuit including a first series arm resonator and a first capacitive element. The first series arm resonator is provided on a path connecting a first terminal and a second terminal. The first capacitive element is coupled in parallel with the first series arm resonator. The first series arm resonator includes a first divided resonator and a second divided resonator coupled in series with each other. The first resonance circuit includes a second resonance circuit including the first divided resonator and a second capacitive element coupled in parallel with the first divided resonator.
    Type: Grant
    Filed: December 1, 2020
    Date of Patent: January 2, 2024
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Tetsu Takahashi, Toru Yamaji, Takuma Kuzushita
  • Patent number: 11863162
    Abstract: A filter includes series resonators on a signal path, each of the series resonator including an IDT electrode that includes first electrode fingers each including a variant portion, second electrode fingers each including no variant portion, or both the first electrode fingers and the second electrode fingers, in the IDT electrode of one or more series resonators of the series resonators, a direction connecting other-side end portions of electrode fingers crosses an acoustic wave propagation direction, the IDT electrode includes the first electrode fingers, a first portion of an IDT electrode of another series resonator centrally located in the acoustic wave propagation direction, includes only the first electrode fingers, and a second portion and a third portion on two sides of the first portion each include only the second electrode fingers.
    Type: Grant
    Filed: September 1, 2021
    Date of Patent: January 2, 2024
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Kentaro Nakamura, Noriyoshi Ota
  • Patent number: 11855602
    Abstract: There is disclosed acoustic resonators and filter devices. An acoustic resonator device includes a piezoelectric plate, and an interdigital transducer (IDT) formed on a front surface of the piezoelectric plate. The IDT includes interleaved fingers. At least one of the interleaved fingers includes a first layer adjacent the piezoelectric plate and a second layer over the first layer, wherein a width of the first layer is constant, and wherein a width of the second layer varies along a length of the at least one interleaved finger.
    Type: Grant
    Filed: February 10, 2021
    Date of Patent: December 26, 2023
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Viktor Plesski, Julius Koskela
  • Patent number: 11855603
    Abstract: Methods of manufacturing an acoustic wave device are disclosed. An anti-reflection layer can be formed over a conductive layer that is over a piezoelectric layer. The conductive layer can include aluminum, for example. The anti-reflection layer can remain distinct from the conductive layer after a heating process. A photolithography process can pattern an interdigital transducer of the acoustic wave device from one or more interdigital transducer electrode layers that include the conductive layer. The anti-reflection layer can reduce reflection from the conductive layer during the photolithography process.
    Type: Grant
    Filed: March 31, 2022
    Date of Patent: December 26, 2023
    Assignee: Skyworks Solutions, Inc.
    Inventors: Satoru Matsuda, Tatsuya Fujii, Yoshiro Kabe, Kenji Nagano