Abstract: An acoustic wave filter device includes first and second signal terminals, a series arm circuit connected between the first and second signal terminals and including series arm resonators, and a parallel arm circuit connected in series between the series arm circuit and a ground potential and including at least one parallel arm resonator. The series arm resonators include first and second series arm resonators having different anti-resonant frequencies from each other. The anti-resonant frequency of the first series arm resonator is lowest among anti-resonant frequencies of the plurality of series arm resonators. The first series arm resonator and the second series arm resonator are connected to each other without another circuit element interposed therebetween.

Abstract: Acoustic filters are disclosed. A bandpass filter has a passband between a lower band edge and an upper band edge. The bandpass filter includes a plurality of transversely-excited film bulk acoustic resonators (XBARs) connected in a ladder filter circuit. The plurality of XBARs includes at least one lithium tantalate XBAR and at least one lithium niobate XBAR.

Abstract: A high frequency circuit includes a main module and a diversity module. The main module includes a duplexer that transmits and receives a signal of a first communication band of a first communication system. The diversity module includes a duplexer that transmits and receives a signal of a second communication band of a second communication system, a reception filter that uses a reception band of the first communication band of the first communication system as a pass band, a power amplifier, a low noise amplifier, and a switch that exclusively switches between connection between a reception filter and the low noise amplifier and connection between the reception filter and the low noise amplifier. The first communication band and the second communication band have the same frequency band.

Abstract: Acoustic resonators and filters are disclosed. An acoustic resonator includes a substrate, a piezoelectric plate and an acoustic Bragg reflector between a surface of the substrate and a back surface of the piezoelectric plate. A conductor pattern on a front surface of the piezoelectric plate includes an interdigital transducer (IDT). The IDT includes a first busbar, a second busbar, and interleaved parallel fingers extending alternately from the first and second busbars. The fingers include a first finger and a last finger at opposing ends of the IDT. A first reflector element is proximate and parallel to the first finger and a second reflector element is proximate and parallel to the last finger. A distance pr between the first reflector element and the first finger and between the second reflector element and the last finger is greater than a pitch p of the IDT.

Abstract: Aspects of this disclosure relate to an acoustic wave device having an overtone mode as a main mode. The acoustic wave device is sufficiently asymmetric on opposing sides of a piezoelectric layer over an acoustic reflector such that the main mode of the acoustic wave device is the overtone mode.

Abstract: Aspects of this disclosure relate to a multiplexer with an acoustic assisted trap circuit. The multiplexer includes a first acoustic wave filter and a second acoustic wave filter. The first acoustic wave filter can include a bulk acoustic wave resonator. The second acoustic wave filter can include a surface acoustic wave resonator and an impedance network. The surface acoustic wave resonator and the impedance network can together provide a trap for a harmonic associated with the first acoustic wave filter.

Abstract: An electronic component includes a first main body including a plurality of dielectric layers stacked together, and a second main body mounted to the first main body. The second main body includes a first circuit section and a second circuit section that are each constituted by using at least one acoustic wave element and are electrically separated from each other. The first main body includes first to third ground conductor lavers located between the first and second circuit sections when seen in a Z direction.

Abstract: A surface acoustic wave device comprising a base substrate, a piezoelectric layer and an electrode layer in between the piezoelectric layer and the base substrate, a comb electrode formed on the piezoelectric layer comprising a plurality of electrode means with a pitch p, defined asp=A, with A being the wavelength of the standing acoustic wave generated by applying opposite potentials to the electrode layer and comb electrode, wherein the piezoelectric layer comprises at least one region located in between the electrode means, in which at least one physical parameter is different compared to the region underneath the electrode means or fingers. A method of fabrication for such surface acoustic wave device is also disclosed. The physical parameter may be thickness, elasticity, doping concentration of Ti or number of protons obtained by proton exchange.

Abstract: A filter device includes first and second filters respectively having first and second passbands, the second passband being in a frequency range higher than the first passband. The first and second filters are commonly connected to a common terminal. In the first filter, multiple parallel arm resonators define a parallel connection unit in which the parallel arm resonators are connected in parallel with no serial arm resonators interposed therebetween. The parallel arm resonators in the parallel connection unit include first and second parallel arm resonators having anti-resonant frequencies different from each other. In combined impedance-frequency characteristics of the parallel arm resonators in the parallel connection unit, at least one anti-resonant frequency other than a highest anti-resonant frequency is equal to or higher than 2f1min?f2min and equal to or lower than 2f1max?f2max.

Abstract: An acoustic wave device includes a piezoelectric layer, the piezoelectric layer being a rotated Y-cut lithium niobate substrate or an X-cut lithium tantalate substrate; an upper conductive layer having a substantially consistent density, on or over the upper surface of the piezoelectric layer; a lower conductive layer having a substantially consistent density, on or below the lower surface of the piezoelectric layer; and a first additional film having a substantially consistent density, wherein at least one of the upper and lower conductive layers is mainly made of ruthenium, chrome, copper, molybdenum, tungsten, tantalum, platinum, rhodium, or iridium, and wherein at least a part of the first additional film is in the resonance region in the plan view, and the density of the first additional film is equal to or less than the density of aluminum.

Abstract: A 5 GHz Wi-Fi bandpass filter includes a ladder filter circuit with two or more shunt transversely-excited film bulk acoustic resonators (XBARs) and two or more series XBARs. Each of the two or more shunt XBARS includes a diaphragm having an LN-equivalent thickness greater than or equal to 360 nm, and each of the two or more series XBARS includes a diaphragm having an LN-equivalent thickness less than or equal to 375 nm.

Abstract: Disclosed is a Bulk Acoustic Wave (BAW) filter structure with a conductive bridge forming an electrical loop with an electrode for reduced electrical losses. In exemplary aspects disclosed herein, the BAW filter structure includes a transducer with electrodes, a piezoelectric layer between the electrodes, and at least one conductive bridge offset from at least a portion of one of the electrodes by an insulating volume. The conductive bridge forms a first electrical loop between a medial end and a distal end of the electrode. Such a configuration reduces electrical resistance, heat resistance, and/or ohmic losses for improved electrical loss of the BAW filter structure.

Abstract: An electronic component includes a mounting substrate, and first and second devices each including a functional element. The first device is spaced apart from and faces the mounting substrate. The second device is located on the mounting substrate and faces the first device. A functional element of the first device is located on a first surface facing the second device, in the first device. A functional element of the second device is located on a second surface facing the first device, in the second device.

Abstract: A surface acoustic wave device includes a piezoelectric substrate formed from a Ca3Ta(Ga1-xAlx)3Si2O14 single crystal, and an interdigital electrode formed on the surface of the piezoelectric substrate and formed from Al. The interdigital electrode is configured to generate a Love-wave-type SH wave on the surface of the piezoelectric substrate. A normalized film thickness obtained by dividing the film thickness of the interdigital electrode by the wavelength of the Love-wave-type SH wave is 0.16 or less.

Abstract: An acoustic wave device includes a substrate, a first resonator, a second resonator, and a shared reflector. The second resonator is adjacent to the first resonator and has different frequency characteristics different than the first resonator. The first resonator includes a first interdigital transducer electrode. The second resonator includes a second interdigital transducer electrode. The shared reflector has frequency characteristics that are the same as both frequency characteristics of the first resonator and frequency characteristics of the second resonator or between the frequency characteristics of the first resonator and the frequency characteristics of the second resonator. a higher-order mode frequency of the first resonator and a higher-order mode frequency of the second resonator coincides.

Abstract: An acoustic wave device is disclosed. The acoustic wave device includes a piezoelectric layer, an interdigital transducer electrode positioned over the piezoelectric layer, and an anti-refection layer over a conductive layer of the interdigital transducer electrode. The conductive layer can include aluminum, for example. The anti-reflection layer can include silicon. The anti-reflection layer can be free from a material of the interdigital transducer electrode. The acoustic wave device can further include a temperature compensation layer positioned over the anti-reflection layer in certain embodiments.

Abstract: An acoustic wave device includes a substrate including a piezoelectric layer, first and second resonators on the substrate, and a shared reflector. The second resonator is located on the substrate adjacent to the first resonator and has different frequency characteristics than the first resonator. The shared reflector is located on the substrate between the first resonator and the second resonator and is a reflector for both the first resonator and the second resonator. The first resonator includes a first interdigital transducer electrode with electrode fingers positioned with a first pitch. The second resonator includes a second interdigital transducer electrode with electrode fingers positioned with a second pitch. A lower limit frequency of a stop band of the shared reflector is between a lower limit frequency of a stop band of the first resonator and a lower limit frequency of a stop band of the second resonator.

Abstract: An acoustic wave component is disclosed. The acoustic wave component can include a bulk acoustic wave resonator and a surface acoustic wave device. The bulk acoustic wave resonator can include a first portion of a ceramic substrate, a first piezoelectric layer positioned on the ceramic substrate, and electrodes positioned on opposing sides of the first piezoelectric layer. The surface acoustic wave device can include a second portion of the ceramic substrate, a second piezoelectric layer positioned on the ceramic substrate, and an interdigital transducer electrode on the second piezoelectric layer.

Abstract: Acoustic resonators, filters and methods of making resonators are disclosed. An acoustic resonator includes a substrate, a piezoelectric plate, and an acoustic Bragg reflector between a surface of the substrate and a back surface of the piezoelectric plate. An interdigital transducer (IDT) on a front surface of the piezoelectric plate includes first and second busbars and a plurality of interleaved fingers extending alternately from the first and second busbars. At least a portion of the first busbar contacts the substrate through an opening in the piezoelectric plate and acoustic Bragg reflector.

Abstract: Acoustic resonators, filters, and methods. An acoustic resonator includes a substrate, a piezoelectric plate, and a diaphragm including a portion of the piezoelectric plate spanning a cavity in a substrate. An interdigital transducer (IDT) on a front surface of the piezoelectric plate includes first and second sets of interleaved interdigital transducer (IDT) fingers extending from first and second busbars respectively. The interleaved IDT fingers extend onto the diaphragm. Overlapping portions of the interleaved IDT fingers define an aperture of the acoustic resonator. First and second dielectric strips are on the front surface of the piezoelectric plate. Each dielectric strip has a first portion under the IDT fingers in a respective margin of the aperture and a second portion extending into a gap between the respective margin and the respective busbar.

Abstract: Acoustic resonators, filters, and methods. A filter includes a piezoelectric plate supported by a substrate; and three or more diaphragms of the piezoelectric plate spanning a respective cavity in the substrate. A conductor pattern on the plate has interdigital transducers (IDTs) of three or more acoustic resonators. Each IDT has two sets of interleaved fingers extending from two busbars respectively. Overlapping portions of the fingers define an aperture of each acoustic resonator. Sometimes, each of the resonators has two dielectric strips that overlap the IDT fingers in first and second margins of the aperture and that extend into first and second gaps between the first and second margins and the busbars. Other times, the first and second dielectric strips are on the front surface of the plate, have a first portion under the IDT fingers and have a second portion extending into a gap between the margins and the busbars.

Abstract: A filter includes a series resonator including a first piezoelectric layer and first electrodes, and a parallel resonator including a second piezoelectric layer and second electrodes. Each of the first and second piezoelectric layers is a monocrystalline lithium niobate layers, has an X-axis orientation in a planar direction, and has a thickness direction in a direction obtained by a 105° rotation of a +Z-axis orientation toward a +Y-axis orientation. The first electrodes face each other across the first piezoelectric layer to form a first resonance region and are extracted from the first resonance region in a direction substantially parallel to the X-axis orientation of the first piezoelectric layer. The second electrodes face each other across the second piezoelectric layer to form a second resonance region and are extracted from the second resonance region in a direction substantially orthogonal to the X-axis orientation of the second piezoelectric layer.

Abstract: The present disclosure provides a radio frequency filter, including: a substrate; a supporting electrode protruded on a front surface of the substrate; and a thin film structure formed on the substrate and spaced with the substrate by the supporting electrode. An end surface of a top end of the supporting electrode is in sealing contact with a front surface of the thin film structure.

Abstract: A surface elastic wave filter has resonant cavities and comprises a composite substrate formed of a base substrate and a piezoelectric upper layer; at least one input electroacoustic transducer and an output electroacoustic transducer, arranged on the upper layer, and at least one internal reflecting structure, arranged between the input electroacoustic transducer and the output electroacoustic transducer. The internal reflecting structure comprises a first structure comprising at least one reflection grating having a first period and a second structure comprising at least one reflection grating having a second period, the first period being greater than the second period.

Abstract: Acoustic resonators, filters, and methods. An acoustic resonator includes a substrate, a piezoelectric plate, and a diaphragm including a portion of the piezoelectric plate spanning a cavity in a substrate. An interdigital transducer (IDT) on a front surface of the piezoelectric plate includes first and second sets of interleaved interdigital transducer (IDT) fingers extending from first and second busbars respectively. The interleaved IDT fingers extend onto the diaphragm. Overlapping portions of the interleaved IDT fingers define an aperture of the acoustic resonator. First and second dielectric strips are on the front surface of the piezoelectric plate. Each dielectric strip has a first portion under the IDT fingers in a respective margin of the aperture and a second portion extending into a gap between the respective margin and the respective busbar.

Abstract: A filter includes first and second shunt resonators, at least one series resonator connected to the first and second shunt resonators in a ladder filter circuit, and a first ground contact pad. The first shunt resonator has two or more first sub-resonators and the second shunt resonator has two or more second sub-resonators. At least one first sub-resonator and at least one, but less than all, of the two or more second sub-resonators are connected to the first ground contact pad.

Abstract: Aspects of this disclosure relate to multiplexers with that include an acoustic wave resonator. The acoustic wave filter includes a plurality of acoustic wave resonators of a first type and a shunt acoustic wave resonator of a second type. The shunt acoustic wave resonator of the second type has lower second harmonic distortion than the acoustic wave resonators of the first type. The shunt acoustic wave resonator of the second type has a resonant frequency in a passband of another filter of the multiplexer. Related radio frequency modules, wireless communication devices, and methods are also disclosed.

Abstract: A radio-frequency module includes a mounting substrate including a ground electrode layer formed by a planar wiring pattern; multiple ground terminals, which are multiple external connection terminals that are arranged on a first main surface of the mounting substrate and that are set to ground potential; and a first radio-frequency component (for example, a reception filter and/or a low noise amplifier) mounted on the first main surface. The multiple ground terminals are arranged at an outer periphery side of the first main surface with respect to the first radio-frequency component and are connected to the ground electrode layer. In a plan view of the mounting substrate, at least part of the first radio-frequency component is overlapped with the ground electrode layer.

Abstract: Aspects of this disclosure relate to multiplexers with acoustic wave resonators. The multiplexer includes a first filter and a second filter. The first filter includes a plurality of bulk acoustic wave resonators and a shunt surface acoustic wave resonator. The shunt acoustic wave resonator can have a resonant frequency in a passband of the second filter. The passband of the second filter is below a passband of the first filter. In certain applications, the first filter is a receive filter and the second filter is a transmit filter.

Abstract: Devices and methods related to wideband multiplexer for radio-frequency (RF) applications. In some embodiments, a multiplexer may include a common path configured to receive a plurality of RF signals. The multiplexer may further include a first path having an output coupled to the common path and configured to provide a band-pass response for a frequency band BX. The multiplexer may further include a second path having an output coupled to the common path such that RF signals in the first and second paths are combined and routed through the common path. The second path may be configured to provide a band-stop response for the frequency band BX such that the common path includes a wideband response that includes the frequency band BX and one or more other frequency bands.

Abstract: An acoustic filter device includes a transversely-excited film bulk acoustic resonator (XBAR) including a plurality of sub-resonators, and conductors connecting the plurality of sub-resonators in series between a first node and a second node. At least one of the conductors connects two of the plurality of sub-resonators and has a shape that minimizes an area of the at least one conductor.

Abstract: A surface acoustic wave device includes a piezoelectric substrate and a pair of IDT electrodes. The pair of IDT electrodes includes a pair of busbars and multiple electrode fingers. The pair of busbars are formed on the piezoelectric substrate. The electrode fingers extend in a comb shape from each of the busbars toward the opposing busbar. The pair of IDT electrodes has an intersection region as a region where the electrode fingers connected to one busbar and the electrode fingers connected to another busbar are intersected when viewed along an arrangement direction of the electrode fingers. The electrode finger in a non-intersection region outside the intersection region has a thickness thinner than a thickness of the electrode finger in the intersection region.

Abstract: An acoustic wave device includes a piezoelectric substrate, a first interdigital transducer (IDT) electrode, reflectors on both sides of the first IDT electrode in a propagation direction of an acoustic wave, and a second IDT electrode facing the first IDT electrode with a reflector interposed therebetween. The first and second IDT electrodes include first and second intersecting areas in which electrode fingers overlap in the propagation direction. The first and second intersecting areas overlap in the propagation direction. A third busbar of the second IDT electrode is coupled to a first busbar of the first IDT electrode. A fourth busbar of the second IDT electrode is coupled to a ground potential. A resonant frequency of the second IDT electrode is in a frequency band of an interference wave signal.

Abstract: A semiconductor device including a first functional module arranged on a first substrate and having a chip, an electrical connection component and a sealing ring, where the sealing ring surrounds the chip, and the chip is electrically connected to the electrical connection component; a second functional module having a packaging substrate, where the packaging substrate includes at least two metal layers and a dielectric layer between the metal layers; a third functional module having multiple redistribution lines and multiple micro through holes for electrical connection between the first functional module and the second functional module, where the electrical connection component in the first functional module is electrically connected to the third functional module; and a second substrate, where the second substrate is sealed with the first substrate.

Abstract: A method for packaging chips includes: flip-chip bonding a plurality of filter chips to be packaged on a substrate to be packaged; applying a first mold material layer on the filter chips to be packaged; applying a second mold material layer on a side of the first mold material layer away from the filter chip to be packaged, the first mold material layer and the second mold material layer forming a first mold layer; thinning the first mold material layer and the second mold material layer to expose substrates of the filter chips to be packaged, and thinning the substrates of the filter chips to be packaged to a preset thickness; applying a second mold layer on the exposed substrates of the filter chips to be packaged to obtain a mold structure; and cutting the mold structure into a plurality of particle chips.

Abstract: Filter devices. A first chip includes a first interdigital transducer (IDT) of a first acoustic resonator formed on a surface of a first piezoelectric wafer having a first thickness, interleaved fingers of the first IDT disposed on a portion of the first piezoelectric wafer spanning a first cavity in a first base. A second chip includes a second IDT of a second acoustic resonator formed on a surface of a second piezoelectric wafer having a second thickness less than the first thickness, interleaved fingers of the second IDT disposed on a portion of the second piezoelectric wafer spanning a second cavity in a second base. A circuit card coupled to the first chip and the second chip includes at least one conductor for making an electrical connection between the first IDT and the second IDT.

Abstract: An acoustic resonator includes a piezoelectric layer on a substrate and an interdigital electrode structure on the piezoelectric layer. The interdigital electrode structure includes a first bus bar, a second bus bar, a first set of electrode fingers, and a second set of electrode fingers. The first bus bar and the second bus bar extend parallel to one another along a length of the interdigital electrode structure. The first set of electrode fingers are coupled to the first bus bar and extend to a first apodization edge. The second set of electrode fingers are coupled to the second bus bar and extend to a second apodization edge. The first set of electrode fingers and the second set of electrode fingers are interleaved. At least one of the first apodization edge and the second apodization edge provides a wave pattern along the length of the interdigital electrode structure.

Abstract: An RF filter comprising a resonator element and a polymer composition is provided. The polymer composition contains an aromatic polymer and has a melting temperature of about 240° C. or more. The polymer composition exhibits a dielectric constant of about 5 or less and dissipation factor of about 0.05 or less at a frequency of 10 GHz.

Abstract: A radio frequency module includes: a first mounting board having a first principal surface and a second principal surface; a second mounting board having a third principal surface facing the second principal surface and a fourth principal surface; a transmission filter having a first mounting surface facing the second principal surface and a first top surface; and a reception filter having a second mounting surface facing the third principal surface and a second top surface; wherein the transmission and reception filters overlap at least partially in a plan view of the first and second mounting boards, an output terminal of the transmission filter is arranged on the first top surface, an input terminal of the reception filter is arranged on the second top surface, and the output and input terminals are connected by a conductive member not routed through the first mounting board or the second mounting board.

Abstract: The present disclosure includes devices, systems, and methods for reducing signal noise in endoscopic rotational imaging. Many embodiments include an elongate member that includes an impedance matching network disposed between a proximal imaging core and a distal imaging core. In many such embodiments, the elongate member may connect a controller at the proximal end and include a rotational transducer at the distal end. In various embodiments, the proximal and distal imaging cores may include a plurality of insulated conductors disposed within a shield (e.g., a shielded twisted pair (STP)). In various such embodiments, the insulated conductors may be utilized to communicate differential signals between the controller and the rotational imaging transducer. In some embodiments, the insulated conductors in the proximal imaging core may have a larger diameter than the insulated conductors in the distal imaging core.

Abstract: An acoustic wave device includes a support substrate and first and second resonant sections adjacent to each other on the support substrate. Each of the first and second resonant sections includes a piezoelectric thin film, an IDT electrode on the piezoelectric thin film, and a support layer surrounding the piezoelectric thin film in a plan view of the acoustic wave device. The support layer has a different linear expansion coefficient from the piezoelectric thin film. The piezoelectric thin film in the first resonant section and the piezoelectric thin film in the second resonant section are divided by the support layer between the resonant section and the resonant section.

Abstract: At least three acoustic filters circuits FC are arranged on a single chip CH. At least two of them are electrically connected already on the chip for multiplexing. This reduces space consumption and leads to smaller device size.

Abstract: A laterally excited bulk acoustic wave device is disclosed. The laterally excited bulk acoustic wave device can include a first solid acoustic mirror, a second solid acoustic mirror, a piezoelectric layer that is positioned between the first solid acoustic mirror and the second solid acoustic mirror, an interdigital transducer electrode on the piezoelectric layer, and a support substrate arranged to dissipate heat associated with the bulk acoustic wave. The interdigital transducer electrode is arranged to laterally excite a bulk acoustic wave. The first solid acoustic mirror and the second solid acoustic mirror are arranged to confine acoustic energy of the bulk acoustic wave. The first solid acoustic mirror is positioned on the support substrate.

Abstract: This invention focuses on minimizing the hot spots on a filter chip by creating thermal radiators using the mechano-acoustic structures and connection circuitry. A gradual increase of metal to wafer relation is made to provide better heat dissipation and heat sinking. Preferably the shunt lines of the ladder type arrangement of SAW resonators (RS1, RS2, RS3) comprise a broadened section (BBCN).

Abstract: Acoustic filters are disclosed. An acoustic filter device includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces and a thickness ts, the back surface attached to the surface of the substrate except for portions of the piezoelectric plate forming a plurality of diaphragms that span respective cavities in the substrate. A conductor pattern is formed on the front surface of the piezoelectric plate, the conductor pattern comprising a plurality of interdigital transducers (IDTs) of a plurality of acoustic resonators, interleaved fingers of each IDT of the plurality of IDTs disposed on a respective diaphragm of the plurality of diaphragms. The interleaved fingers of all of the plurality of IDTs are substantially aluminum with a common thickness tm, where 0.12 ts?tm?0.32 ts.

Abstract: Radio frequency filters are disclosed. A filter includes a first transversely-excited film bulk acoustic resonator (XBAR) having a first sub-resonator and a second sub-resonator connected in parallel. A pitch of the first sub-resonator is not equal to a pitch of the second sub-resonator and/or a mark of the first sub-resonator is not equal to a mark of the second sub-resonator.

Abstract: The present disclosure provides a new and improved temperature compensated surface-launched acoustic wave (SAW) strain sensor using multiple reflectors in SAW devices mounted on a split-carrier package that provides complete isolation from strain for a temperature sensing portion of the device, while exposing a strain sensing portion of the device to both strain and temperature, with the influence of temperature being common to the various portions of the device, and a single acoustic reference with respect to which multiple differential acoustic measurements can be made, to provide inherently temperature-compensated strain measurements.

Abstract: A resonance apparatus that processes an electrical loss using a conductive material and a method of manufacturing the resonance apparatus are provided. The resonance apparatus includes a lower electrode formed at a predetermined distance from a substrate, and a piezoelectric layer formed on the lower electrode. The resonance apparatus further includes an upper electrode formed on the piezoelectric layer, and a conductive layer formed on the upper electrode or the lower electrode.

Abstract: A filter device has a first piezoelectric plate spanning a first and second cavity of a substrate. A first and second interdigital transducer (IDT) are on a front surface of the first piezoelectric plate over the first and second cavity. A dielectric layer is bonded to the first piezoelectric plate and covers the first IDT and second IDT. A second piezoelectric plate is bonded to a front surface of the dielectric layer over the first cavity and the second cavity. A second dielectric layer is formed on a front surface of the second piezoelectric plate over the first cavity but not over the second cavity. The thickness of the dielectric layer, the first piezoelectric plate and the second piezoelectric plate can be selected to tune a shunt resonator over the first cavity and a series resonator over the second cavity to function at 15 GHz.

Abstract: Aspects of the disclosure relate to wireless communication, and high-frequency filters with resonators. One example is a frequency band filter circuit having a split resonator. The split resonator comprises a resonator including a first section of a shared input busbar, a first section of a shared output busbar, and an electrode structure between the first section of the shared input busbar and the first section of the shared output busbar, the electrode structure configured for a resonance. The split resonator also comprises a detuned resonator. The detuned resonator includes a second section of the shared input busbar, a second section of the shared output busbar, and a detuned electrode structure between the second section of the shared input busbar and the second section of the shared output busbar, the detuned electrode structure configured for a detuned resonance different from the resonance.