Abstract: The power source apparatus is provided with a shunt resistor connected in series with batteries, and a current computation circuit that detects the voltage induced by current flow through the shunt resistor to compute battery current. The shunt resistor is provided with a pair of current flow terminals at two separated points on a metal plate connected in series with the batteries via connecting leads, and a pair of voltage detection terminals on a side of the metal plate between the pair of current flow terminals. Further, the shunt resistor has interval adjustment structures to adjust the distance (L) between attachment points where the connecting leads attach to the pair of current flow terminals. The distance (L) between lead attachment points is adjusted with the interval adjustment structures to finely adjust the voltage induced at the voltage detection terminals due to current flow between the two attachment points.

Abstract: In a method for sorting PTC elements having different resistance-temperature characteristics, a predetermined voltage that allows a current to sufficiently decay is applied to each of PTC elements A and B, and the PTC elements are sorted on the basis of the difference between the times required for the currents passing through the PTC elements B to reach a predetermined value (e.g., 52 mA).

Abstract: A two level microbridge infrared thermal detector having an upper detector planar section (a) comprising a temperature responsive detector of an oxide of vanadium having a high TCR and a resistivity in the range of 20K ohms to 50K ohms per square sheet resistance, and (b) being supported above a lower section by leg portions of an oxide of vanadium having a resistivity of approximately 500 ohms per square sheet resistance.

Abstract: A structure and method of making resistive emitting members which exhibit high resistivity while at the same time providing high temperature operation significantly above that known in the art. Specifically the use of nitrides of Group IVB transition metals from the periodic table, exclusive of titanium is described.

Abstract: A temperature sensor includes a ceramic substrate, and a sensing resistor containing platinum is embedded in the ceramic substrate. Electric current can be applied to the sensing resistor through the lead. The voltage of the sensing resistor can be detected through the second lead. Another resistor for dividing voltage is electrically connected to the sensing resistor, the resistor is trimmed by laser irradiation so as to adjust its electrical resistance value such that upon applying electric current having a certain value onto the sensing resistor an output voltage having a predetermined value is generated. Heat generated by the laser irradiation to the resistor does not affect an electrical resistance value of the resistor as much as that of the sensing resistor, thereby improving precision of the temperature sensor. The sensing resistor avoids contact with the atmosphere.

Abstract: A balanced wire resistor has two interconnected windings with different temperature coefficients. The electrical resistance of the wire resistor is determined only by the resistance values of the two windings. In a process for the production of the wire resistor, the wire length of a first winding of the newly to be wound wire resistance is calculated by using the measured wire length, as well as measured resistance values of the previously wound wire resistor. The wire length of a second winding of the newly to be wound wire resistance is determined by using the two measured wire lengths of the two windings, as well as measured resistance values of the previously wound wire resistor.

Abstract: A camera system primarily for infrared radiation having a focal plane array of microbolometer elements in a vacuum package with inexpensive thermoelectric temperature stabilization is shown. The stabilization temperature may be selected by a designer or a user over a wide range of temperatures, but room temperature use is primarily expected. The microbolometers are passive elements and the readout scheme involves a sweep of the array with a short duration pulse-high level bias current.

Abstract: A photosensor array for use with an image processing apparatus has a plurality of photosensors disposed in an array. Each photosensor includes a substrate, a photoconductive layer formed on the substrate and made of an amorphous silicon, and a pair of electrodes disposed on a surface of the photoconductive layer, the electrodes being spaced apart from each other by a certain distance partially defining a light receiving region of the photosensor. In the phososensor array, the photoconductive layer is constructed as of two or more laminated layers, and the lower layer positioned nearer to the substrate has a low content of oxygen.

Abstract: An improved photoelectric smoke detector and alarm system which may be incorporated in a single station, completely self-contained unitary structure, or which may be incorporated in a multi-station detector system that is capable of self-contained operation but which can also be interconnected with other detectors whereby when any one detector's alarm sounds, all of the other alarms automatically sound in the other interconnected structures, the improved smoke detector and alarm system including a piezoceramic electrically activatable alarm, an illuminating circuit including a gallium aluminum arsenide light emitting diode, and a smoke sensing circuit including a pair of identical photoelectric cells formed on the same substrate with the photoelectric cells mounted in proximity to the light emitting diode whereby light emanating from the light emitting diode impinges upon one of the dual photoelectric cells at all times and impinges upon the other of the dual photoelectric cells to change the conductivity of

Abstract: The present invention provides a method for triggering a light triggered thyristor (LT.sup.2) which method comprises using a light source to provide background excitation of carriers in at least the amplifying gate areas of the LT.sup.2 prior to triggering the device. The background excitation is of a low level and will not trigger the device or cause excessive leakage current. At the desired time a second light signal is used to trigger the LT.sup.2.

Abstract: A semiconductor photoconductor having low impedance nonmetallic contacts is disclosed which has increased detectivity over prior art photoconductor structures. The improved photoconductor has metallic contacts that are separated by a contact length that is greater than the optical length of the detector. The contact regions of the semiconductor adjacent the detector region are thicker than the detector region. The process for fabricating the photoconductor includes thinning the detector region to an appropriate thickness while preserving the greater thickness of the contact regions.

Abstract: A manuscript reader comprises an amorphous silicon film sandwiched between at least one transparent electrode and a plurality of metal electrodes formed on an insulating substrate. If the reader includes a plurality of sensors, the detection circuitry can vary a comparison threshold level during the course of one scanning operation.

Abstract: A photoelectric transducing element comprising (a) a substrate; (b) first electrode provided on said substrate; (c) first contact layer to form an ohmic contact with said first electrode with respect to electric charge in at least one polarity; (d) a photoconductive layer provided in contact with said first contact layer and composed of an amorphous material containing silicon atom as a matrix and hydrogen atom, or halogen atom, or both, at a ratio of 1 to 30 atomic % with respect to said silicon atom; (e) second contact layer provided in contact with said photoconductive layer; and (f) second electrode to form an ohmic contact with said second contact layer with respect to said charge.

Abstract: First photoconductor material interconnecting a plurality of first electrodes with a first common electrode is scanned or swept with a beam of radiant energy to selectively interrogate or address individual ones of the plurality of first electrodes. A second plurality of electrodes may be associated with the first plurality and preferably is interdigitated therewith. Second photoconductor material, preferably being different from the first and having a slower rise time, interconnects associated ones of the first and second pluralities of electrodes so that the electrical resistance therebetween varies as a function of the quantum of radiant energy directed thereon. The second plurality of electrodes are connected either directly, photoconductively or otherwise with a second common electrode.

Abstract: Disclosed is a photodetector array of resistance variable light detectors and a method for manufacturing such an array. Electronic read-out circuitry is normally associated therewith.

Abstract: Disclosed is a novel photoconductive array suitable for use as an infrared detector, and a novel process for fabricating same. In this process, a chosen metallization pattern is disposited on the surface of an insulating substrate, and thereafter the metallization pattern is either covered or partially covered with a layer of selected photoconductive material, such as lead selenide or lead sulfide. The photoconductive material is formed into a predetermined pattern which is accomplished using conventional photoetch techniques. Then, a suitable photoresist mask is deposited at a selected location on the surface of the photoconductive layer in preparation for an electroplating step. In this electroplating step, a surface contact metallization for the photoconductor is plated on both the previously deposited photoconductive and metal surfaces which are not masked by the photoresist.