Abstract: A PTC circuit protection device includes a PTC polymer material and two electrodes attached to the PTC polymer material. The PTC polymer material includes a polymer matrix and a particulate conductive filler dispersed in the polymer matrix. The polymer matrix is made from a polymer composition that contains a non-grafted polyolefin. The conductive filler includes first tungsten carbide particles having a first average Fisher sub-sieve particle size of less than 2.5 ?m and a first particle size distribution with a particle size D10 being less than 2.0 ?m and a particle size D100 being less than 10.0 ?m.

Abstract: A resistance circuit is configured such that a P-type resistance section and an N-type resistance section are electrically connected in series, the P-type resistance section is configured with P-type diffusion layer resistance elements that are disposed to form a right angle with respect to each other and that are electrically connected in series, and the N-type resistance section is configured with N-type diffusion layer resistance elements that are disposed to form the right angle with respect to each other and that are electrically connected in series. Furthermore, the P-type diffusion layer resistance element is disposed along a <100> orientation direction of a semiconductor substrate, and the N-type diffusion layer resistance element is disposed along a <110> orientation direction of the semiconductor substrate. It is thereby possible to provide the resistance circuit, an oscillation circuit, and an in-vehicle sensor apparatus that reduce stress-induced characteristic fluctuations.

Abstract: Provided are a device and a method for corrosive environment monitoring that have high measurement precision and enable visual observation. The corrosive environment monitoring device includes a housing, a first thin metal film, a second thin metal film, and terminals. The housing has an opening in one side thereof. The other sides of the housing than the one side are sealed to form space inside the housing. The first thin metal film extends in a direction from the bottom of the space toward the opening. The first thin metal film is resistant to corrosion by a corrosive substance and serves as a supporting member. The second thin metal film extends in the space in a direction from the bottom of the space toward the opening and is supported by the first thin metal film. The second thin metal film is susceptible to corrosion by the corrosive substance and serves as a measuring member.

Abstract: The invention describes electrically conductive shaped bodies with an inherent positive temperature coefficient (PTC), produced from a composition which contains at least one organic matrix polymer (compound component A), at least one submicroscale or nanoscale, electrically conductive additive (compound component B) and at least one phase-change material with a phase-transition temperature in the range from ?42° C. to +150° C. (compound component D). The phase-change material is incorporated into an organic network (compound component C). The electrically conductive shaped body with an inherent PTC effect is, in particular, a filament, a fibre, a spun-bonded web, a foam, a film, a foil or an injection-moulded article. The switching point for the PTC behavior is dependent on the type and also the phase-conversion temperature of the phase-change material. By way of example, a self-regulating surface heater in the form of a film, foil and/or textile can be realized in this way.

Abstract: In order to provide a thermal flow sensor having high measurement accuracy, the thermal type air flow sensor includes a flow detecting unit, a sub passage on which the flow detecting unit is disposed, and an LSI to which a signal obtained by the flow detecting unit is input and which outputs a signal to the outside. A side wall of the sub passage is disposed between the flow detecting unit and the LSI, or on the LSI. A diffusion resistor provided inside the LSI has its longitudinal direction in parallel with a <100> orientation of single-crystal Si.

Abstract: An integrated circuit (IC) chip includes a substrate of a piezo-electric material having a first resistivity coefficient associated with a first direction that is longitudinal to a first crystal axis and a second resistivity coefficient associated with a second direction that is transverse to the first crystal axis. The first and second resistivity coefficients have opposite signs. The IC chip also includes a first stress sensing element formed in the substrate and coupled to pass a first current therethrough. The first stress sensing element includes a first resistor aligned such that the major direction of current flow through the first resistor is in the first direction and a second resistor coupled in series with the first resistor and aligned such that the major direction of current flow through the second resistor is in the second direction.

Abstract: A superconducting fault current limiter (10) is provided with superconducting elements (71, 72) that are in a superconducting state during electrification with a current value in a fixed range and in a normal conducting state during electrification with a fault current in which the current value exceeds the fixed range and is further provided with a coolant vessel (20), which accommodates a liquid coolant (60) and a plurality of superconducting elements, and a cooling means (40) that cools the liquid coolant within the coolant vessel. Within the liquid coolant, the superconducting element (71) for which the critical current is smallest among the plurality of superconducting elements is disposed on the upper side of any other superconducting elements (72). Thus, the superconducting element (71) is cooled, and the life of the superconducting fault current limiter as a whole is extended.

Abstract: A frequency-dependent resistor and circuitry employing the same are provided. In some embodiments, a resistor includes a substrate, an input port, an output port, and a conductive trace on the substrate between the input port and the output port. A resistance between the input port and the output port for a low frequency signal is at least five times lower than the resistance between the input port and the output port for an RF signal and the ratio of the frequencies of the RF signal to the low frequency signal is at least fifty. Circuitry including a transistor adapted to selectively couple the input to the output in response to a control signal provided via a resistor with resistance for a low frequency signal at least five times lower than resistance for an RF signal will have a reduced switching time while still isolating the RF signal.

Abstract: In order to further improve stress tolerance, a thermistor device includes a first base material member made of resin, a thermistor element including a thermistor thin film provided on a metal base material and first and second external electrodes provided on the thermistor thin film, and a first lead electrode and a second lead electrode provided on a principal surface of the first base material member, and connected to the first external electrode and the second external electrode. Each of the metal base material and the thermistor thin film undergoes a deflection between the first external electrode and the second external electrode.

Abstract: Embodiments relate to a system and vehicle for controlling the flight of a vehicle without the need to use pressure sensors. The system includes a plurality of pairwise thermal air data (TAD) sensors being controlled to have a constant temperature during heat dissipation into the atmosphere by each sensor. The system includes at least one processor configured to measure power for maintaining the constant temperature to calculate an angle of attack, a sideslip and a free stream vehicle velocity at infinity to control flight of a vehicle.

Abstract: The present invention discloses a touch panel, having a light transmission touch sensing region and a peripheral region adjacent to at least one side of the light transmission touch sensing region. The touch panel includes a substrate, a patterned decoration frame, a decoration layer, and at least one touch sensing element. The patterned decoration frame is disposed on a surface of the substrate and in the peripheral region. The decoration layer is disposed on the patterned decoration frame, and the touch sensing element is disposed in the light transmission touch sensing region.

Abstract: A surface mountable over-current protection device comprises one PTC material layer, first and second conductive layers, first and second electrodes, and an insulating layer. The PTC material layer comprises crystalline polymer and conductive filler dispersed therein. The first and second conductive layers are disposed on first and second planar surfaces of the PTC material layer, respectively. The first and second electrodes are electrically connected to the first and second conductive layers. The insulating layer is disposed between the first and the second electrodes for insulation. At the melting point of the crystalline polymer, the CTE of the crystalline polymer is greater than 100 times the CTE of the first or second conductive layer, and the first and/or second conductive layers has a thickness which is large enough to obtain a resistance jump value R3/Ri less than 1.4.

Abstract: A touch panel includes a touch sensor layer including a first transparent electrode and a second transparent electrode, wherein an arrangement direction of the first transparent electrode can be perpendicular to that of the second transparent electrode, and both of the first and second transparent electrodes include two transparent metallic patterns which are stacked and electrically connected to each other.

Abstract: A surface-mountable over-current protection device comprises a PTC material layer, first and second conductive layers, first and second electrodes, first and second electrically conductive connecting members. The PTC material layer has a resistivity less than 0.18 ?-cm. The conductive layers are in contact with opposite surfaces of the PTC material layer. The first electrode comprises pair of first metal foils and is insulated from the second conductive layer. The second electrode comprises a pair of second metal foils and is insulated from the first conductive layer. The first electrically conductive connecting member connects to the first metal foils and conductive layer. The second electrically conductive connecting member connects to the second metal foils and conductive layer. The first electrically conductive connecting member comprises 40%-100% by area of the first lateral surface, and the second electrically conductive connecting member comprises 40%-100% by area of the second lateral surface.

Abstract: Provided is a resistive element which has excellent inrush current resistance, and can suppress heat generation in a steady state. The resistive element has an element main body of a semiconductor ceramic in which the main constituent has a structure of R11-xR2xBaMn2O6 in which 0.05?x?1.0 when R1 is Nd and R2 is at least one of Sm, Eu and Gd; 0.05?x?0.8 when R1 is Nd and R2 is at least one of Tb, Dy, Ho, Er, and Y; 0?x?0.4 when R1 is at least one of Sm, Eu, and Gd and R2 is at least one of Tb, Dy, Ho, and Y; and 0?x?1.0 when R1 is at least one of Sm, Eu, and Gd and R2 is at least one of Sm, Eu, and Gd, but the Sm, Eu, and/or Gd in R1 is different from that in R2.

Abstract: An over-current protection device has a PTC device, first and second electrodes and an insulation layer. The PTC device comprises first and second electrically conductive members and a PTC layer laminated between the first and second electrically conductive members. The first and second electrodes are electrically connected to the first and second electrically conductive members, respectively. The insulation layer is disposed on a surface of the first electrically conductive member. The device is a stack structure extending along a first direction, and comprises at least one hole extending along a second direction substantially perpendicular to the first direction. The value of the covered area of the hole divided by the area of the form factor of the over-current protection device is not less than 2%, and the value of the thickness of the device divided by the number of the PTC devices is less than 0.7 mm.

Abstract: A surface mountable over-current protection device having upper and lower surfaces comprises a PTC device, first and second electrodes, and first and second circuits. The PTC device comprises a PTC material layer and first and second conductive layers. The PTC material layer is disposed between the conductive layers and comprises crystalline polymer and conductive filler dispersed therein. The first electrode comprises a pair of first metal foils, whereas the second electrode comprises a pair of second metal foils. The first circuit connects the first electrode and conductive layer, and has a first planar line extending horizontally. The second circuit connects the second electrode and conductive layer, and has a second planar line extending horizontally. At least one of the planar lines has a thermal resistance sufficient to mitigate heat dissipation by which the over-current protection device undergoes a test at 25° C. and 8 amperes can trip within 60 seconds.

Abstract: A surface-mountable over-current protection device comprises one PTC material layer, first and second connecting conductors, first and second electrodes and an insulating layer. The PTC material layer has a resistivity less than 0.2 ?-cm, and comprises crystalline polymer and conductive filler dispersed therein. The first and second connecting conductors are capable of effectively dissipating heat generated from the PTC material layer. The first and second electrodes are electrically connected to first and second surfaces of the PTC material layer through the first and second connecting conductors, respectively. The dissipation factor depending on the ratio of the total area of the electrodes and the conductors to the area of the PTC material layer is greater than 0.6. At 25° C., the value of the hold current of the device divided by the product of the area of the PTC material layer and the number of the PTC material layer is greater than 1A/mm2.

Abstract: According to one embodiment, a touch panel includes first interconnections, second interconnections, sensor units and a control unit. The first interconnections are arranged along a first direction, and extend along a second direction intersecting with the first direction. The second interconnections are arranged along a third direction intersecting with the first direction, and extend along a fourth direction intersecting with the third direction. The sensor units are provided in intersection portions of the first and second interconnections, include first and second ferromagnetic layers, and an intermediate layer, allow a current to be passed, and have one end connected to the first interconnections and another end connected to the second interconnections. The control unit is connected to the first and second interconnections. An electric resistance of the sensor units changes in accordance with a stress applied. The control unit senses a change in the electric resistance.

Abstract: Memristive elements are provided that include an active region disposed between a first electrode and a second electrode. The active region includes an switching layer of a first metal oxide and a conductive layer of a second metal oxide, where a metal on of the first metal oxide differs from a metal ion of the second metal oxide. The memristive element exhibits a nonlinear current-voltage characteristic in the low resistance state based on the oxide hetero-junction between the first metal oxide and the second metal oxide. Multilayer structures that include the memristive elements also are provided.

Abstract: In one aspect, the invention provides a method for making a multi-state memory resistor device. The method comprises providing a convertible component and inducing multiple state-dependent resistances on the convertible component to provide a multi-state memory resistor device. The convertible component is characterized by at least one of packing density, applied pressure, temperature, contact area or combinations thereof. The resistance from the multiple state-dependent resistances of the multi-state memory resistor device is a function of maximum current applied across the convertible component. In another aspect, the invention provides a multi-state memory resistor device comprising a convertible component, wherein the convertible component converts into a multi state memory resistor device having multiple state-dependent resistances when induced with a maximum current across the convertible component.

Abstract: An overvoltage protection element is disclosed that includes a housing, connections for electrically connecting the overvoltage protection element to a current path or a signal path to be protected The overvoltage protection element further includes two varistors arranged inside the housing and electrically connected in parallel, and a center electrode arranged at least partially between the varistors. The housing has two housing halves made of metal and electrically connected to each other, wherein the center electrode is isolated from the housing halves and is electrically connected at the opposite sides of the electrode to a first connection area of a varistor and wherein the two varistors and the center electrode are sandwiched between the two housing halves. One housing half is designed as a cover, which has a covering section and a recessed engagement section.

Abstract: A resistance thermometer is provided having a measuring resistor in a form of a 0.1 to 10 ?m thick structured platinum layer applied to an electrically insulated surface of a substrate and an electrically insulating coating layer covering the platinum layer. The substrate or its surface contains zirconium dioxide, which is stabilized with oxides of a trivalent and a pentavalent metal. Preferably, the trivalent metal is yttrium and the pentavalent metal is tantalum or niobium. The characteristic curve of the measuring resistor preferably conforms to DIN-IEC 751. For mass production of resistance thermometers having high and reproducible measurement accuracy, a structured platinum layer having a thickness of 0.1 to 10 ?m is applied to an electrically insulating substrate having a thermal expansion coefficient in the range of 8.5 to 10.5×10?6/° K and a roughness less than 1 ?m, and the structured platinum layer is covered by an electrical insulator.

Abstract: System and method for providing precision a self calibrating resistance circuit is described that provides for matching a reference resistor using dynamically configurable resistance networks. The resistor network is coupled to the connection, wherein the resistor network provides a configurable resistance across the connection. In addition, the resistor network comprises a digital resistor network and an analog resistor network. Also, the circuit includes control circuitry for configuring the configurable resistance based on a reference resistance of the reference resistor. The configurable resistance is configured by coarsely tuning the resistor network through the digital resistor network and fine tuning the resistor network through the analog resistor network.

Abstract: A method of forming a film is described. The method begins by forming a mixture including a polymer and a plurality of unordered nanomaterial. The film is dried and a plurality of pores is formed within the film. A sensitive film transducer capable of detecting changes in pressure and applied force can be made using this method.

Abstract: This invention relates to a suppressor, including an element having sheets printed with a first internal electrode and a second internal electrode, and a discharge material disposed in a gap between the first internal electrode and the second internal electrode, wherein the discharge material is composed of a SiC—ZnO-based component, in which ZnO is reacted with the surface of SiC, thereby imparting much higher insulating properties and improving ESD resistance.

Abstract: An apparatus provides environmental monitoring of an item and includes an RFID tag, and a passive switch for sensing an environmental parameter to which the item is subjected, and coupled to the RFID tag so that a measurement of the sensed environmental parameter can be stored, the RFID tag for providing remote readout of the sensed environmental parameter. A method provides environmental monitoring of an item and includes the steps of sensing an environmental parameter to which the item is subjected with activation of a passive switch, storing a measurement of the sensed environmental parameter upon the event of activation of the passive switch, and providing remote readout of the measurement of the sensed environmental parameter with an RFID tag.

Abstract: An ESD protection device includes a ceramic multilayer substrate in which a plurality of ceramic insulating layers are laminated; a first connecting conductor extending through the main surfaces of the insulating layer; a mixture portion extending along a main surface of the insulating layer including the first connecting conductor and connected to the first connecting conductor, the mixture portion including a material dispersed therein, the material including at least one selected from a metal and a semiconductor, a metal and a ceramic, a semiconductor and a ceramic, a semiconductor, and a metal coated with an inorganic material; and a second connecting conductor that has electrical conductivity and is connected to the mixture portion and extends along the main surface of the insulating layer on which the mixture portion is provided.

Abstract: An NTC thermistor having a metal base material, a thermistor film layer formed on the metal base material, and a pair of split electrodes formed on the thermistor film layer. A ceramic slurry is applied onto a carrier film to form the thermistor film layer, a metal powder containing paste is applied onto the thermistor film layer to form the metal base material, and further an electrode paste is applied onto the metal base material to form the split electrodes. Thereafter, the three substances are integrally fired.

Abstract: A surface-mount type over-current protection element includes two single-layer composite chips, wherein one chip is made of a first core material and a first and a second metallic foil layer attached on the two surfaces of the first core material, the other chip is made of a second core material and a third and a fourth metallic foil layer attached to the two surfaces of the second core material. The protection element also has an insulating layer arranged between the two chips to electrically insulate and bond to the second and third metallic layers to form a bi-layer composite chip. Part of the first metallic foil layer and the corresponding part of the fourth metallic foil layer are etched to expose part of the first core material and correspond part of the second core material. One or more through-holes are made on the bi-layer composite chip for mounting.

Abstract: Resistive switches and related methods are provided. Such a resistive switch includes an active material in contact with opposite end electrodes. The active material defines electron traps that capture or release charges in accordance with applied switching voltages. Resistive switches are characterized by ON state and OFF state resistance curves. Resistance ratios of ten times or more are exhibited. The state of a resistive switch is determined using sensing voltages lesser then the switching threshold.

Abstract: A PTC polymer composition includes a polymer component, and an electrically conductive filler component including an electro-conductive metallic particulate, an electro-conductive ceramic particulate, and an electro-conductive carbon particulate. The weight ratio of the polymer component to the filler component ranges from 1:13˜1:5.5. The weight of the metallic particulate is higher than that of the ceramic particulate, and the weight of the ceramic particulate is higher than that of the carbon particulate. The carbon particulate is present in an amount ranging from 2.8 wt % to 7.3 wt % based on the weight of the filler component.

Abstract: A chip varistor is provided with a varistor section and a plurality of terminal electrodes. The varistor section is comprised of a sintered body containing ZnO as a major component, exhibits the nonlinear voltage-current characteristics, and has a pair of principal surfaces opposed to each other. The plurality of terminal electrodes are connected each to the varistor section. Each of the terminal electrodes has a first electrode portion connected to either of the principal surfaces and a second electrode portion connected to the first electrode portion.

Abstract: A metallic silicide resistive thermal sensor has a body, a conductive wire and multiple electrodes. The body has multiple etching windows formed on the body and a cavity formed under the etching windows. The etching windows separate the body into a suspended part and multiple connection parts. The conductive wire is formed on the suspended part and the connection parts and is made of metallic silicide. The electrodes are formed on the body and are electrically connected to the conductive wire. The metallic silicide is compatible for common CMOS manufacturing processes. The cost for manufacturing the resistive thermal sensor decreases. The metallic silicon is stable at high temperature. Therefore, the performance of the resistive thermal sensor in accordance with the present invention is improved.

Abstract: An NTC thermistor having a metal base material, a thermistor film layer formed on the metal base material, and a pair of split electrodes formed on the thermistor film layer. A ceramic slurry is applied onto a carrier film to form the thermistor film layer, a metal powder containing paste is applied onto the thermistor film layer to form the metal base material, and further an electrode paste is applied onto the metal base material to form the split electrodes. Thereafter, the three substances are integrally fired.

Abstract: A dual resistance heater for a phase change material region is formed by depositing a resistive material. The heater material is then exposed to an implantation or plasma which increases the resistance of the surface of the heater material relative to the remainder of the heater material. As a result, the portion of the heater material approximate to the phase change material region is a highly effective heater because of its high resistance, but the bulk of the heater material is not as resistive and, thus, does not increase the voltage drop and the current usage of the device.

Abstract: An insertable PPTC over-current protection device includes: first and second electrodes; a solder material; conductive lead pins bonded to the first and second electrodes, respectively, each of the lead pins having a connecting segment extending along and bonded to an outer surface of the respective one of the first and second electrodes through the solder material, and a free segment extending outwardly from the connecting segment beyond a peripheral edge of the respective one of the first and second electrodes; and a PTC polymer matrix laminated between the first and second electrodes. The PTC polymer matrix is formed with at least one hole that has an effective volume to accommodate thermal expansion of the PTC polymer matrix.

Abstract: A PTC material composition for making a PTC circuit protection device comprises a PTC polymer unit and a conductive filler containing a plurality of titanium carbide particles. The titanium carbide particles have a residual oxygen content greater than 0.3 wt % based on the weight of the titanium carbide particles.

Abstract: The present invention may provide a surge protection device, which may include a reference node, first, second, and third nodes, a first arcing section (GAP) coupled between the first and second nodes, and configured to receive a surge voltage from the first node, a first metal oxide varistor (MOV) coupled between the second and reference nodes, and configured to reduce the surge voltage to a first sub-surge voltage at the second node, a second arcing section (GAP) coupled between the second and third nodes, and configured to receive the first sub-surge voltage from the second node, and a second metal oxide varistor (MOV) coupled between the third and reference nodes, and configured to reduce the first sub-surge voltage to a second sub-surge voltage at the third node.

Abstract: A thermistor includes a resistive device, a first insulation layer, a first electrode, a second electrode and a first heat-conductive layer. The resistive device includes a first electrically conductive member, a second electrically conductive member and a polymeric material layer laminated therebetween. The polymeric material layer exhibits positive temperature coefficient (PTC) or negative temperature coefficient (NTC) behavior. The first insulation layer is disposed on the first electrically conductive member. The first electrode is electrically coupled to the first electrically conductive member, whereas the second electrode is electrically coupled to the second electrically conductive member and is insulated from the first electrode. The first heat-conductive layer is disposed on the first insulation layer, and has a heat conductivity of at least 30 W/m-K and a thickness of 15-250 ?m.

Abstract: A piezoresistive sensor device and a method for making a piezoresistive device are disclosed. The sensor device comprises a silicon wafer having piezoresistive elements and contacts in electrical communication with the elements. The sensor device further comprises a contact glass coupled to the silicon wafer and having apertures aligned with the contacts. The sensor device also comprises a non-conductive frit for mounting the contact glass to a header glass, and a conductive non-lead glass frit disposed in the apertures and in electrical communication with the contacts. The method for making a piezoresistive sensor device, comprises bonding a contact glass to a silicon wafer such that apertures in the glass line up with contacts on the wafer, and filling the apertures with a non-lead glass frit such that the frit is in electrical communication with the contacts.

Abstract: A varistor ceramic includes the following materials: Zn as the main component, Pr in a proportion of 0.1 to 3 atom %, and a metal M selected from Y, Ho, Er, Yb and Lu in a proportion of 0.1 to 5 atom %.

Abstract: A piezoresistive sensor device and method for making the same are disclosed. The device comprises a silicon wafer having piezoresistive elements and contacts in electrical communication with the elements. The device further comprises a contact glass coupled to the silicon wafer and having apertures aligned with the contacts. The device also comprises a non-conductive frit for mounting the contact glass to a header glass, and a conductive non-lead glass frit disposed in the apertures and in electrical communication with the contacts. The method for making the device comprises bonding a contact glass to a silicon wafer such that apertures in the glass line up with contacts on the wafer, and filling the apertures with a non-lead glass frit such that the frit is in electrical communication with the contacts. The use of a lead free glass frit prevents catastrophic failure of the device in ultra high temperature applications.

Abstract: An over-current protection device includes two metal foils and a PTC material layer laminated therebetween. The PTC material layer has a volume resistivity between 0.07 ?-cm and 0.32 ?-cm. The PTC material layer includes a crystalline polymer, a conductive ceramic carbide filler of a particle size between 0.1 ?m and 50 ?m and a volume resistivity less than 0.1 ?-cm, and a carbon black filler. The weight ratio of the carbon black filler to the conductive ceramic carbide filler is between 1:90 and 1:4. The conductive ceramic carbide filler and the carbon black filler are dispersed in the crystalline polymer. The resistance ratio R100/Ri is between 3 and 20.

Abstract: There is provided a PTC device wherein its PTC element functions appropriately even when the PTC device is used in an environment in which solvent is present. The PTC device includes: (1) a polymer PTC component including a polymer PTC element and a first and a second metal electrodes disposed on both sides of the main surface thereof; (2) a lead connected to at least one of the metal electrodes of the polymer PTC component; and (3) a ceramic package having an open-ended space for accommodating the polymer PTC component, said open-ended space having at least one opening that defines the open-ended space. The lead closes said opening in order to isolate the polymer PTC component disposed in said open-ended space from the environment surrounding the ceramic package.

Abstract: A system for testing a push-button switch is provided. The system for testing a push-button switch includes a switch test device. The switch test device has a flexible tab attached to a pushing member at an end of the flexible tab. A sensor is attached to the flexible tab. The sensor generates a signal that changes relative to a deformation of the flexible tab. A data collection system is connected to the switch test device and receives signals from the sensor.

Abstract: A surge absorbing element has a first electrode, a second electrode, and a ceramic layer. The second electrode is opposed to the first electrode. The ceramic layer has a polycrystal structure including a plurality of crystal grains showing voltage nonlinearity, and is at least partially brought into contact with the first electrode and the second electrode. The ceramic layer has a void inside therein, and surface discharge is generated on surfaces, exposed to the void, of the crystal grains, whereby electric conduction is attained between the first and second electrodes.

Abstract: An exemplary varistor is disclosed which includes at least two poles; a non-linear block; a conductive plate arranged on a main face of the block and having a protruding portion forming one of the poles; and an electrically insulating coating applied to the main face of the block. The part forming the connection pole emerges from the electrically insulating coating and has a braze surface extending above the electrically insulating coating; and the protruding part forming the connection pole is connected to the rest of the plate over at least half of the perimeter thereof.

Abstract: A PTC circuit protection device includes a PTC polymer material and two electrodes attached to the PTC polymer material. The PTC polymer material includes a polymer matrix and a particulate conductive filler dispersed in the polymer matrix. The polymermatrix is made from a polymer composition that contains a primary polymer unit and a reinforcing polyolefin. The primary polymer unit contains a base polyolefin and optionally a grafted polyolefin. The reinforcing polyolefin has a weight average molecular weight greater than that of the base polyolefin. The primary polymer unit and the reinforcing polyolefin are co-melted together and then solidified to form the polymer matrix. The base polyolefin has a melt flow rate ranging from 10 g/10 min to 100 g/10 min, and the reinforcing polyolefin has a melt flow rate ranging from 0.01 g/10 min to 1 g/10 min.

Abstract: A substrate device includes a layer of non-linear resistive transient protective material and a plurality of conductive elements that form part of a conductive layer. The conductive elements include a pair of electrodes that are spaced by a gap, but which electrically interconnect when the transient protective material is conductive. The substrate includes features to linearize a transient electrical path that is formed across the gap.