Abstract: A magnetoresistive sensor having a magnetization vector M and a current density vector J which form an angle of approximately 45.degree.. Magnetic flux, which enters an active region of the magnetoresistive sensor approximately perpendicular to the magnetization vector M, propagates across the active region with substantially constant length thereby producing a rectangular shaped read sensitivity function. The current density vector J is directed with electrical contacts adjacent the active region which have high resistance regions and low resistance regions.

Abstract: A thin film magnetometer includes first and second thin film magnetoresistive elements and first and second thin film laminated flux collectors. The first magnetoresistive element is located in a gap formed by the flux collectors, and the second magnetoresistive element is subtantially magnetically shielded by the flux collectors, and acts as a thermistor. The magnetoresistive elements are connected in a bridge circuit whereby any signal component due to thermal effects on the magnetoresistive elements is removed from the signal produced by the first magnetoresistive element.

Abstract: A magnetic field sensing device in the form of a sensor unit which reduces the effective air gap between the sensing device and its exciter is provided by packaging the sensing device in the manner that provides protection from the environment while simultaneously minimizing the distance between the sensing device and its exterior surface adjacent its exciter. The present invention is particularly suitable for automotive applications, such as magnetic field sensing devices for detecting the wheel speed for an electronic anti-lock braking system.

Abstract: A self-contained magnetic field sensing device which has magnetic field sensing elements arranged in an electrical bridge network. An integral electrical conductor spaced from the sensing elements carries a current for setting and resetting the direction of magnetization of the sensing elements. A known magnetic field useful for test set up and calibration is provided at the sensing elements by a second integral electrical conductor.

Abstract: A magnetic sensor is disposed in an opposing relation to a magnetic scale in which a flat surface scale base made of a glass is plated by a magnetic material and a resultant plated layer is magnetized at a constant grating pitch. The magnetic sensor includes two magnetoresistance effect element groups disposed symmetrically with respect to a common central line. Since the surface of the magnetic scale is smooth, a clearance between the magnetic sensor and the magnetic scale can be kept substantially constant. When the magnetic sensor is moved in an opposing relation to the magnetic scale, a rise of temperature in the magnetoresistance effect elements is compensated for by the above symmetrical layout of the two magnetoresistance effect element groups.

Abstract: There is provided a magnetoresistance effect element which is a multilayer structure body wherein a first magnetic film layer made of Ni-rich Ni-Co-Fe having a thickness of 10 to 100 .ANG. and a second magnetic film layer made of Co-rich Co-Ni-Fe having a thickness of 10 to 100 .ANG., which are different from each other in coercive force, are integrally laminated with a non-magnetic metal film layer having a thickness of 10 to 100 .ANG. interposed therebetween. The non-magnetic metal film layer is of a metal, for example, Cu, Ag, Au, Pt, Ru or Re. (Ni.sub.A Co.sub.1-A).sub.B Fe.sub.1-B, Ni.sub.A Fe.sub.1-A or Ni.sub.A Co.sub.1-A is used as a material of the first magnetic film, and (Co.sub.C Ni.sub.1-C).sub.D Fe.sub.1-D is used as a material of the second magnetic film.

Abstract: A magnetic variable resistor has an elongated band of electrically resistive magnetic material, with the side edges tapered to a sharp point so that the skin effect causes current to migrate to the edges to create greater resistance. A layer of insulating material can cover the band as it is coiled. Leads are secured to opposite ends of the band. An alternate form of the invention embeds the coiled band in a magnetic insulating material. Surface mount leads are flush with at least one surface of the insulating material.

Abstract: A magnetoresistive sensor includes a magnetic field detecting portion composed of a ferromagnetic thin film formed on one side of an insulating rectangular substrate, at least two terminal electrode portions and wiring portions. In the magnetoresistive sensor, the surface level of at least two corner portions is lower than that of the surface portion of the substrate other than at least two corner portions on the one side of the substrate, the at least two terminal electrode portions are separately formed at the corner portions having the lower surface level and the magnetic field detecting portion composed of the ferromagnetic thin film is formed on a portion of the surface of the substrate other than the at least two corner portions.

Abstract: A superconductinve magneto-resistive device for use in a sensor system for sensing an external magnetic field which is formed so as to have a predetermined pattern for a current path through which a supplied current flows. The pattern includes portions formed close and parallel to each other so that magnetic fields induced by respective currents flowing through the portions can be cancelled with each other.

Abstract: A magnetoresistive sensor having a longitudinal field that is produced along its axis and that stabilizes the sensor. The longitudinal field is produced by the current in conductors that are connected to the magnetoresistive sensor elements. By controlling the direction and distribution of the current in the conductors, a longitudinal field is produced that has the required direction and magnitude to stabilize the single domain state of the sensor. The resulting lack of domain wall motion in the sensor during operation prevents instabilities in its electrical output, commonly known as Barkhausen noise. Four different sensor designs are provided that include two single element sensors with two conductors, a dual element sensor with four conductors, and a dual element sensor with three conductors. The ease of implementation makes the stabilized sensor of the present invention superior to conventional approaches that rely on permanent magnets or exchange coupled layers to provide longitudinal bias.

Abstract: A package for a magnetic field sensitive element, such as a magnetoresistor, includes at least two planar layers of a relatively stiff ferromagnetic material which is also electrically conductive. The layers have opposed edges which are in closely spaced relation to form a narrow gap therebetween. A terminal tab is integral with and extends from each layer. A magnetic field sensitive element is on a surface of at least one of the layers and preferably extends across the gap to be on both layers. The magnetic field sensitive element has a pair of contacts each of which is electrically connected to a separate one of the layers. A permanent magnet is mounted on and insulated from the surface of the layers opposite the magnetic field sensitive element. A protective layer of an insulating material may cover the magnetic field sensitive element and the layers with the terminal tabs extending therefrom.

Abstract: A magnetic sensor disposed in an opposing relation to a magnetic scale magnetized at a grating pitch .lambda. in the length direction thereof and which is movable relative to the magnetic scale in the length direction is comprised of at least two magnetoeffect resistance elements disposed with a distance of (.lambda./2).multidot.n (n=1, 2, 3, . . . ) in the length direction, the two magnetoeffect resistance elements being formed in the width direction perpendicular to the length direction and each of the magnetoeffect resistance elements having partial magnetoeffect resistance elements distant from each other by a distance of (.lambda./2).multidot.(1/2m) (m=2, 3, 4, . . . ) from a predetermined position on the width direction perpendicular to the length direction, wherein the two magnetoeffect resistance elements are shaped as substantially symmetrical configurations relative to a central line in the length direction.

Abstract: A magnetoresistive (MR) sensor comprising a first and a second thin film layer of a magnetic material separated by a thin film layer of a non-magnetic metallic material. The first ferromagnetic layer is magnetically soft. The magnetization direction of the first layer of magnetic material is set substantially perpendicular to the magnetization of the second layer of magnetic material at zero applied field, and the magnetization direction of the second layer of magnetic material is fixed. A current flow is produced through the MR sensor, and the variations in voltage across the MR sensor are sensed due to changes in resistance of the MR sensor produced by rotation of the magnetization in the first layer of magnetic material as a function of the magnetic field being sensed. The variation of the resistance with the angle between the magnetizations of the first and second layers of magnetic material has been defined as the spin valve (SV) effect.

Abstract: A magnetic sensor has first, second, third and fourth magneto-resistance effect elements disposed in a direction of a magnetizing pitch (1) of a magnetic recording medium serving to supply a magnetic signal, with first and second magneto-resistance effect elements disposed spacedly from each other at an interval corresponding to an electrical angle of .theta., the third and fourth magneto-resistance effect elements disposed spacedly from each other at an interval corresponding to an electrical angle of (360.degree.-.theta.), and the intervals between the center line of the first and second magneto-resistance effect elements and between the line of the third and fourth magneto-resistance effect elements being set to n.lambda..

Abstract: A magnetic field sensor, such as a magnetoresistor, includes a strip of a layer of a high electron mobility semiconductor whose electrical characteristics vary when a magnetic field is applied thereto on the surface of a body (substrate) of an insulating layer. Conductive contacts are on the strip at the ends thereof and conductive shorting bars are on and spaced along the strip to divide the strip into active regions. The body is mounted on a permanent magnet assembly which includes a magnet and a layer of a ferromagnetic material with the ferromagnetic material extending over the strip. The ferromagnetic layer is in close proximity to only the strip and, more preferably, to only the active regions of the strip so as to confine the magnetic field to the strip.

Abstract: An MR head includes two substantially identical MR elements, separated by a thin film non-magnetic electrically conductive spacer. A current applied to the MR head splits into two respective substantially equal currents that flow in the same direction through the substantially identical MR elements, to provide mutual bias and to serve as sense currents for detecting change in element resistance. The MR elements are biased to operate in a magnetically unsaturated mode. This results in a "bootstrapping" of short wavelength signals that effectively amplifies the reproduced signal over a broad region of the signal spectrum when the linear spacing between the MR elements is in the range of from one half to one times the half-wavelength of signals recorded on a magnetic recording medium.

Abstract: As a component belonging to a class of components having hysteresis cycles of similar characteristics, the component of the invention subjects group of probes, in the absence of field-disturbing members situated in relationship with the probes, to a determined induction field so that a "bias" induction difference (B.sub.O) appears between the two groups, which difference is not less than the value of the high switchover threshold (B.sub.H), or not greater than the value of the low switchover threshold (B.sub.B), or else lies between the switchover thresholds (B.sub.H and B.sub.B), thereby obtaining a signal in a determined logic state at the output from the hysteresis level comparator in spite of induction difference dispersions lying between the minimum value of the low threshold (B.sub.Bmin) and the maximum value of the high threshold (B.sub.Hmax). The invention is applicable to differential detection Hall effect sensors.

Abstract: A superlattice comprising alternating layers of undoped GaAs and silicon doped Al.sub.0.3 Ga.sub.0.7 As is used as a magnetoresistor for measuring magnet fields in excess of one Tesla. The magnetic field to be measured is passed vertically through the superlattice and current from a source of constant current is flowed vertically through the resulting superlattice and the voltage drop across the superlattice is measured to provide an indication of the strength of the magnetic field.

Abstract: A magnetic field sensor, such as a magnetoresistor, having improved electron mobility comprises a substrate of an insulating semiconductor material, such as gallium arsenide or indium phosphide, having on a surface thereof a narrow strip of a thin active film. The active film has a thin first layer of undoped or lightly doped high electron mobility semiconductor material, such as indium antimonide or indium arsenide, on the substrate surface, and a second layer of the semiconductor material, which may be thicker than the first layer, on the first layer. The second layer is at least partially doped n-type conductivity so as to have a high electron density. The second layer may be entirely of the n-type conductivity semiconductor material or a superlattice of alternating layers of n-type conductivity and intrinsic semiconductor materials or a superlattice of intrinsic semiconductor material and a ternary or quaternary alloy of the semiconductor material which is at least partially of n-type conductivity.

Abstract: A Hall generator includes a substrate body of single crystalline semi-insulating gallium arsenide having a surface. A thin layer, no greater than about 5 micrometers in thickness, of single crystalline indium arsenide is on the surface of the body and is in the form of four arms joined at a common point to form a cross. A separate metal contact is on each of the arms at the free end thereof. An accumulation layer is adjacent the outer surface of the indium arsenide layer and extends along the entire surface of the indium arsenide layer between the contacts. The accumulation layer is effective to provide a magnetic sensitivity and range of operating temperatures as if the indium arsenide layer was much thinner and had a much higher electron density and electron mobility. Electrical devices, such as field effect transistors, may be formed in the body and the surface and electrically connected to the contacts of the Hall generator in a desired circuit.

Abstract: The magnetic encoder of the present invention includes a magnetic signal generating drum having plural magnetic pole lines respectively having different magnetization pitches. Magnetic signals are repeatedly generated from the plural magnetic pole lines. A magnetic sensor is provided which includes plural magnetic resistant effect elements for converting the respective magnetic signals generated from the plural magnetic pole lines into electric signals. The plural magnetic resistant effect elements respectively confront the plural magnetic pole lines and output electric signals of different pulse numbers in accordance with incident magnetic signals. The magnetic signals generated from the plural magnetic poles lines and incident on the magnetic resistant effect elements are less that an anisotropic magnetic field level of the respective magnetic resistant effect elements.

Abstract: A magnetic field sensor, such as a magnetoresistor, Hall effect device or magnetotransistor, comprising an active layer of indium antimonide on the surface of a substrate having a length substantially greater than its width. A conductive contact is on the active layer at each end thereof and a plurality of shorting bar contacts are on the active layer and spaced along the length of the active layer between the end contacts. The contacts are each of a thin layer of a highly conductive n-type conductivity semiconductor material which has a low sheet resistivity and a low contact resistance with the active layer. A layer of a conductive metal may be provided on the semiconductor material layer of the contact, and a thin layer of highly conductive n-type indium antimonide may be provided between the semiconductive material layer and the active layer.

Abstract: An electric rotating machine, which can be operated as either a motor or generator, utilizes material exhibiting a Hall effect to replace the normal slip rings or mechanical commutation devices. Preferably, a slab of Hall effect material is curved to extend circumferentially around the rotor between the rotor and stator, and the rotor is adapted to create a magnetic field. When used as a motor, a source of electrical power is connected to the Hall effect material to cause a primary current to flow therein. The combination of the rotor magnetic field and the primary current flowing in the Hall effect material produces a Hall effect current which creates a torque on the rotor causing it to rotate. When used as a generator, the rotor is rotated and induces a primary current to flow in the Hall effect material. The combination of the rotor magnetic field and the induced primary current produces a Hall effect voltage and current that can be connected to power an electrical load.

Abstract: A magnetic field distribution measuring apparatus for measuring an external magnetic field distribution includes a substrate made of a nonmagnetic material and having opposite surfaces, a plurality of magnetoresistive elements deposited on one surface of the substrate and each made of a superconductive material having a weak coupling at the grain boundaries. Coils are provided on the other surface of the substrate at positions corresponding to the magnetoresistive elements. The coils are sequentially applied with AC current to produce AC magnetic field having a peak value greater than a magnetic field threshold level at which the magnetoresistive element changes the state from a superconductive state to a magnetoresistive state. Detecting the degree of magnetoresistive from each magnetoresistive element, the magnetic field distribution can be detected.

Abstract: The present invention concerns a magnetroesistive sensor. In this sensor, the sensitive element is constituted by a monocrystalline magnetic metallic multilayer formed of a stack of layers of a magnetic material separated by layers of a non-magnetic material, the multilayer being constructed in such a way that the layers of magnetic material have antiferromagnetic type coupling and that of the transition between the antiparallel aligned state and the parallel aligned state occurs in a very short interval of the magnetic field.

Abstract: An encapsulatable sensor assembly includes an external housing with internal support components for retaining an active sensor element and associated electrical circuitry in a predetermined relationship while providing a plurality of internal sequentially interconnected cavities for facilitating a flow of an encapsulating material from an encapsulating material injection port to a vented overflow to assure a complete fill of the internal cavities to restrain the internal components. The sensor assembly provides a structure for a void free encapsulation and internal leadwire stress relief concurrently with location control of the internal components while also providing a combination which is easily adaptable to automatic assembly and encapsulation techniques.

Abstract: A magnetometer includes a magnetoresistive element and first and second high-permeable laminated flux collectors of height H partially overlapping, respectively, opposing lateral edges of the magnetoresistive element, wherein the flux collectors are separated laterally by a gap of length G which the magnetoresistive element spans. The two laminated flux collector and the magnetoresistive element cooperatively form an open-loop flux-conducting path of total height 2H+G, that is capable of collecting flux of a magnetic field being measured and, in response to the flux collected, developing a magnetometive force across the gap G that is functionally related to the height of the flux collectors.

Abstract: An MR head includes two substantially identical MR elements, separated by an insulating layer which has shorting stubs at its ends for electrically shorting the MR elements. A current applied to the MR elements splits into two currents that flow in the same direction through the substantially identical MR elements, to provide mutual bias and to serve as sense currents for detecting change in element resistance. The MR elements are biased to operate in a magnetically unsaturated mode. This results in a "bootstrapping" of short wavelength signals that effectively amplifies the reproduced signal over a broad region of the signal spectrum when the linear spacing between the MR elements is in the range of from one half to one times the half-wavelength of signals recorded on a magnetic recording medium.

Abstract: An array of Corbino disks are connected in series to provide a high sensitivity magnetoresistor device with a total resistance determined by the number of disks in the array and their geometries. Each Corbino disk has a hub terminal on a layer of magnetoresistor material, and a surrounding conductive shorting ring. The disks are connected in an alternating series connected with alternate inter-disk connections made between the hub terminals of successive disks, and the intermediate inter-disk connections made between the shorting rings of successive disks. Current flow through the array thus alternates between hub terminal-to-shorting ring and shorting ring-to-hub terminal for successive disks. The disks are preferably provided in pairs on mutually isolated islands, with the shorting rings and hub terminals on opposite surfaces on the disks.

Abstract: A magnetoresistive sensor requires only two electrical connections to operate. The magnetoresistive sensor uses a hammerhead design and a barber pole array. Blocking capacitors are used to define two signal paths, one for a DC sense current, and one for an AC data signal. The blocking capacitors provide an electrical short to AC signals across wing regions of the magnetoresistive sensor. The blocking capacitors are fabricated directly upon a wafer which carries the magnetoresistive sensor.

Abstract: A magnetic sensor includes magnetic sensor elements arrange on the upper surface of a bobbin and an input/output section provided on the lower surface of the bobbin wherein the magnetic sensor elements and the input/output section are connected through a wiring pattern formed on the bobbin by electroless plating.

Abstract: The invention is directed to an arrangement for detecting a rotational angle of a rotating shaft by a sensor. The sensor includes a substrate and a detecting element which has a plurality of blocks of magnetoresistance element deposited on a planar surface of the substrate. The sensor also includes a magneto member which has a pair of magnetic poles facing each side end of the substrate respectively and providing a magnetic field covering at least the planar surface of the substrate. The sensor is so arranged that one of the detecting element and the magneto member is mounted on the rotating shaft, and the other is disposed at a certain position relative to the rotating shaft. Accordingly, the blocks of magnetoresistance element are disposed always in a uniform magnetic field, so that the rotational angle is detected accurately.

Abstract: A sensing device for measuring electric current and electric power including a plurality of magneto-electric transducers for detecting a magnetic field about a conductor carrying the electric current. The magneto-electric transducers can include Barber-Pole type elements, each element being positioned on a substrate at approximately the same distance from the central point of a substrate.

Abstract: A magnetoresistive material includes discrete units of magnetostrictive mrial separated from one another by one or more gaps. In one class of embodiments, magnetostrictive particles are embedded in a phase-separated nonmagnetostrictive matrix. In one embodiment a magnetoresistive article is made by co-sputtering particles of a magnetrostrictive material and a quantity of a nonmagnetostrictive material onto an nonmagnetostrictive substrate. The magnetostrictive particles are spaced from one another by distances in the range of 10 to 100 angstroms. In another embodiment, a magnetoresistive article is made by employing relatively large magnetostrictive electrodes separated by a small gap on a nonmagnetostrictive substrate. Magnetic field sensors employing such articles are also provided.

Abstract: A magnetoresistor includes a thin film of a degenerately doped semiconductor material extending between conductive contacts at opposite edges of the film. The film has a plurality of openings therethrough which are arranged in spaced parallel rows with the openings in each row being between two openings in the adjacent rows. This forms the film into two set of paths which extend around the openings. The openings are selected to be of a size such that when a magnetic field is applied perpendicular to the film, the resistance of the magnetoresistor increases because electron flow through the film between the contacts must be in a substantially circular path around the openings.

Abstract: All of the resistors in a magnetic field sensitive circuit, both magnetoresistors (MRs) and fixed resistors (FRs), are formed simultaneously in a common fabrication process from a common magentoresistive material. An additional structure in the form of Hall shorting strips is applied to selected resistors to rendered them MRs, while the resistors without the additional structure function as FRs. In one circuit the resistors are arranged in pairs in two voltage divider circuits. The high voltage resistor for one circuit and the low voltage resistor from the other circuit are MRs while the remaining resistors are FRs, producing an increased magnetic sensitivity. In another circuit all resistors are MRs and are positioned so that the magentic field at one pair swings in a direction opposite to that of the other pair, further increasing the magnetic sensitivity. Discrepancies stemming from temperature coefficient mismatch and manufacturing variations are substantially reduced.

Abstract: A magnetic encoder comprises a sensor having a plurality of magnetoresistive (MR) elements placed in juxtaposed position relative to a magnetic recording medium upon which data signals are recorded employing a recording pitch, A. Output signals produced by the MR elements connected in a plurality of bridge circuits are formed by relative movement between the MR elements and the magnetic recording medium. The MR elements are positioned at A/n intervals, wherein n is an integer and n.gtoreq.8. A multiplier circuit is connected to receive the output signals from the MR element bridge circuits and provide a plurality of phase shifted output signals corresponding to a A/N pitch interval of recording pitch, A, wherein N is an integer and N.gtoreq.2.

Abstract: A a dual element magnetoresistive sensor that uses the longitudinal field produced by the sense/bias currents to initialize the elements into a stable antiparallel state. The dual element magnetoresistive sensor comprises two magnetoresistive elements having first and second conductors coupled thereto. The first and second conductors are oriented in the same direction as the magnetoresistive elements in their contact areas. A third conductor is disposed between and coupled to the two magnetoresistive elements at their opposite ends. The third conductor is oriented transverse to the directions of the first and second sensor elements, and is adapted to conduct current therethrough in a direction transverse to the currents conducted by the first and second conductors. Currents conducted by all three conductors self-initialize the magnetoresistive elements into a single domain state.

Abstract: A yoke type thin-film magneto-resistive heat includes a magneto-resistive element that detects the magnetic field generated in the magnetic recording medium as resistance changes, a yoke, that leads magnetic flux from the head gap to the above mentioned magneto-resistive element, a DC magnetic field application system, that applies a desirable weak magnetic field to the above mentioned longitudinal direction of the magneto-resistive element, and a conductor, that applies a desirable bias magnetic field to the above mentioned magneto-resistive element in the strip width direction. The easy axis of magnetization of the magneto-resistive element is inclined in a range of 20.degree.-40.degree. to the mentioned longitudinal direction of the magneto-resistive element, so that, anisotropic angle dispersion conditions are relaxed, at the same time, by applying a desirable bias magnetic field to the magneto-resistive element in the strip width direction.

Abstract: A unique current sense means is provided in which a bonding wire or similar conductor is routed to one or more Hall effect current sensing devices which, in one embodiment, is fabricated as part of a power semiconductor device.

Abstract: A remote control lever module comprising a support including a bearing and a lever including a shaft pivotably supported by the bearing for oscillation about the shaft axis between a nonactuating position and actuating positions. The lever further includes an actuating arm extending from the shaft at an angle thereto for moving the shaft between the nonactuating position and the actuating positions and a return spring acting on the lever when the shaft is in the actuating positions to urge the shaft to the nonactuating position. Magnets are fixed on the shaft and movable therewith to provide a movable magnetic field of varying strength in an effective zone adjacent one side of the shaft.

Abstract: According to this invention, a device for detecting magnetism comprises; a substrate, an interposed insulating layer containing impurities therein, formed on the substrate, and a ferromagnetic magnetoresistive element formed on the interposed layer, wherein at least a portion of the interposed layer on which the ferromagnetic magnetoresistive element is formed has a concentration of impurities of less than a predetermined value. Further, in the device of this invention, the surface of the layer interposed between the substrate and the ferromagnetic magnetoresistive element has a surface roughness of less than 120 and an angle between a contacting surface of a conductive wiring and the ferromagnetic magnetoresistive element and the surface of the interposed layer is less than 78 degrees.

Abstract: An integrated circuit is encased in non-magnetic material and electrically connected to a Hall sensor. A permanent magnet is mounted for movement with respect to the Hall sensor to cause the Hall sensor to produce an output signal for setting a reference value.

Abstract: A magnetic field can be detected by moving magnetized areas past a magnetoresistor, which responds to the changing magnetic field. The sensitivity to magnetic fields is limited by the width of the magnetoresistors used. To optimize the sensitivity, two spaced-apart ferromagnetic pole pieces (6, 7) are so disposed between the magnetoresistor and the magnetized areas that their ends (8, 9) at the magnetoresistor (4) form a first gap (10) having a width (11) on the order of the width (12) of the magnetoresistor (4), and that their ends (13, 14) at the magnetized areas form a second, considerably narrower gap (16).

Abstract: In construction of a magnetic encoder used for detection of displacement of a mobile body, a circular magnetized pattern is formed on one longitudinal end face of a magnetic rotary spindle mechanically coupled to the mobile body, and a magnetic sensor faces the magnetized pattern with a prescribed gap. Direct formation of the magnetized pattern on the rotary spindle excludes production errors caused by the conventional coupling process and end-face magnetization assures significant compactness of the entire construction.

Abstract: A magnetoresistive sensor that includes a very thin film of monocrystalline semiconductive material, having at least a moderate carrier mobility and no greater than a moderate carrier density. The device includes means for inducing or enhancing an accumulation layer adjacent the film outer surface. With film thicknesses below 5 micrometers, preferably below 3 micrometers, the presence of the accumulation layer can have a very noticeable effect. The unexpected improvement provides a significant apparent increase in mobility and conductivity of the semiconductive material, and an actual increase in magnetic sensitivity and temperature insensitivity. A method for making the sensor is also described.

Abstract: A device including at least one magnetoresistor for sensing the position of a ferromagnetic part which moves past the magnetoresistor. The magnetoresistor is influenced by a permanent magnet which is mounted near the magnetoresistor in a housing which contains the magnetoresistor. The device is useful as a position, direction, or speed sensor.

Abstract: A protective device for one battery or serially arranged battery cells is adapted to fit between one battery and its terminal connector or between adjacent battery cells. The device incorporates a disk of positive temperature coefficient material having a pair of circular end faces for contact. The disk is supported by a ring adhesively joined thereto, the ring having a central axial opening to enable the button terminal of a battery cell to contact against the disk as the disk and battery cell are arranged in a single battery application or in serial contact with similar battery cells.

Abstract: A magnetic-resistor sensor is provided with two or more comb-like patterns of different pitches formed on a single base plate and each comb-like pattern is adapted for use in combination with a magnetic scale of a corresponding information pitch so that one magnetic-resistor sensor could span magnetic scales of different information pitches. Such a universal magnetic-resistor sensor is used for a magnetic encoder having a magnetic scale in which a magnetic information pattern and a reference position pattern are formed in the same single track, thereby conserving space on the magnetic scale.

Abstract: The invention discloses a movement detecting device for detecting the movement state of a moving body such as a rotating body, in which a magnetic recording medium on which N and S magnetic poles are alternately recorded at a constant interval is fixed symmetrically with respect to a rotary shaft of a rotating body whose rotation state is to be detected, and an MR element comprising magnet-resistive elements is mounted at a fixed position relative to the magnetic recording medium so that the rotation state of the rotating body can be detected from variation of the values of resistance of the magnet-resistive elements caused by the rotation of the body. N and S poles are recorded on the magnetic recording medium with a small pole pitch P. The magnet-resistive elements are formed to have a width sufficiently smaller than the pole pitch.