Abstract: A current sense resistor and a method of manufacturing a current sensing resistor with temperature coefficient of resistance (TCR) compensation are disclosed. The resistor has a resistive strip disposed between two conductive strips. A pair of main terminals and a pair of voltage sense terminals are formed in the conductive strips. A pair of rough TCR calibration slots is located between the main terminals and the voltage sense terminals, each of the rough TCR calibration slots have a depth selected to obtain a negative starting TCR value observed at the voltage sense terminals. A fine TCR calibration slot is formed between the pair of voltage sense terminals.

Abstract: A composite resistor includes a thin film resistor element having a first temperature coefficient of resistance and a metal resistor element having a second temperature coefficient of resistance. A portion of the metal resistor element overlaps a portion of the thin film resistor element such that the portion of the metal resistor element is in thermal communication with the portion of the thin film resistor element to compensate for a resistance drift arising during operation of the composite resistor.

Abstract: The invention relates to a current-sensing resistor (1) for measuring an electric current, in particular also for measuring a battery current in a vehicle power supply, having a plate-shaped first connecting part (3) for introducing the electrical current to be measured, wherein the plate-shaped first connecting part (3) consists of an electrically conductive conductor material; a plate-shaped second connecting part (2) for conducting away the electrical current to be measured, wherein the plate-shaped second connecting part (2) consists of an electrically conductive conductor material; and a plate-shaped resistance element (4), which is connected in the current path between the two connecting parts and through which the electrical current to be measured flows, wherein the resistance element (4) consists of a comparatively high-impedance resistance material.

Abstract: A current sense resistor and a method of manufacturing a current sensing resistor with temperature coefficient of resistance (TCR) compensation are disclosed. The resistor has a resistive strip disposed between two conductive strips. A pair of main terminals and a pair of voltage sense terminals are formed in the conductive strips. A pair of rough TCR calibration slots is located between the main terminals and the voltage sense terminals, each of the rough TCR calibration slots have a depth selected to obtain a negative starting TCR value observed at the voltage sense terminals. A fine TCR calibration slot is formed between the pair of voltage sense terminals.

Abstract: A metallic silicide resistive thermal sensor has a body, a conductive wire and multiple electrodes. The body has multiple etching windows formed on the body and a cavity formed under the etching windows. The etching windows separate the body into a suspended part and multiple connection parts. The conductive wire is formed on the suspended part and the connection parts and is made of metallic silicide. The electrodes are formed on the body and are electrically connected to the conductive wire. The metallic silicide is compatible for common CMOS manufacturing processes. The cost for manufacturing the resistive thermal sensor decreases. The metallic silicon is stable at high temperature. Therefore, the performance of the resistive thermal sensor in accordance with the present invention is improved.

Abstract: A dual resistance heater for a phase change material region is formed by depositing a resistive material. The heater material is then exposed to an implantation or plasma which increases the resistance of the surface of the heater material relative to the remainder of the heater material. As a result, the portion of the heater material approximate to the phase change material region is a highly effective heater because of its high resistance, but the bulk of the heater material is not as resistive and, thus, does not increase the voltage drop and the current usage of the device.

Abstract: The invention relates to a current-sensing resistor (1) for measuring an electric current, in particular also for measuring a battery current in a vehicle power supply, having a plate-shaped first connecting part (3) for introducing the electrical current to be measured, wherein the plate-shaped first connecting part (3) consists of an electrically conductive conductor material; a plate-shaped second connecting part (2) for conducting away the electrical current to be measured, wherein the plate-shaped second connecting part (2) consists of an electrically conductive conductor material; and a plate-shaped resistance element (4), which is connected in the current path between the two connecting parts and through which the electrical current to be measured flows, wherein the resistance element (4) consists of a comparatively high-impedance resistance material.

Abstract: An embodiment of a resistor formed by at least one first portion and one second portion, electrically coupled to one another and with different crystalline phases. The first portion has a positive temperature coefficient, and the second portion has a negative temperature coefficient. The first portion has a first resistivity, and the second portion has a second resistivity, and the portions are coupled so that the resistor has an overall temperature coefficient that is approximately zero.

Abstract: An embodiment of a resistor formed by at least one first portion and one second portion, electrically connected to one another and with different crystalline phases. The first portion has a positive temperature coefficient, and the second portion has a negative temperature coefficient. The first portion has a first resistivity, and the second portion has a second resistivity, and the portions are connected so that the resistor has an overall temperature coefficient that is approximately zero.

Abstract: A high-temperature sensor element includes at least one thermistor element having at least two contact areas and one contacting element including an isolating ceramic base body and at least two conductor lines. The contact areas of the thermistor element are connected to the conductor lines of the contacting element by an electro conductive bridge. A process for assembling a sensor element is also described in which an thermistor element is connected by a temperature resistant junction to a contacting element, and in which the thermistor element and part of the contacting element adjacent to the thermistor element are sealed by a encapsulation compound.

Abstract: A microchip resistor device is disclosed in which first and second resistive elements are formed on a substrate. The first resistive element has a first resistance value and a positive temperature coefficient of resistance (TCR) over a selected temperature range. The second resistive element has a second resistance value and a negative TCR over the selected temperature range. The first and second resistive elements do not overlap each other. The first and second resistive elements are operatively connected with one or more conductors to provide a current path between the two elements. The product of the first resistance value and the positive temperature coefficient of resistance is substantially equal in magnitude to the product of the second resistance value and the negative temperature coefficient of resistance.

Abstract: A microchip resistor device is disclosed in which first and second resistive elements are formed on a substrate. The first resistive element has a first resistance value and a positive temperature coefficient of resistance (TCR) over a selected temperature range. The second resistive element has a second resistance value and a negative TCR over the selected temperature range. The first and second resistive elements do not overlap each other. The first and second resistive elements are operatively connected with one or more conductors to provide a current path between the two elements. The product of the first resistance value and the positive temperature coefficient of resistance is substantially equal in magnitude to the product of the second resistance value and the negative temperature coefficient of resistance.

Abstract: This document discloses low variation resistor devices, methods, systems, and methods of manufacturing the same. In some implementations, a low-variation resistor can be implemented with a metal-oxide-semiconductor field-effect-transistor (“MOSFET”) operating in the triode (e.g., ohmic) region. The MOSFET can have a source that is connected to a reference voltage (e.g., ground) and a gate connected to a gate voltage source. The gate voltage source can generate a gate voltage that varies in proportion to changes in the temperature of an operating environment. The gate voltage variation can, for example, be controlled so that it offsets the changes in MOSFET resistance that are caused by changes in temperature. In some implementations, the gate voltage variation offsets the resistance variance by offsetting changes in transistor mobility that are caused by changes in temperature.

Abstract: The metal foil resistor having a metal foil resistive element 20 composed of a metal foil whereupon a resistance circuit pattern is formed. The metal foil resistor comprises: a package 10 which contains the metal foil resistive element 20 in an electrically insulated state so that the resistive element can be expandable and contractible in a spreading direction of the metal foil; and a relay terminal 26 which is held in the package 10 in the electrically insulated state and is connected to an electrode 20a of the metal foil resistive element 20. A temperature coefficient of resistance can be reduced and stabilized. Control factors can be reduced to increase degrees in freedom in designing. Further, an external stress applied to a package is prevented from transmitting to the metal foil resistive element, and therefore the package can be easily attached to a discretionary heat sink.

Abstract: An embodiment of a resistor formed by at least one first portion and one second portion, electrically connected to one another and with different crystalline phases. The first portion has a positive temperature coefficient, and the second portion has a negative temperature coefficient. The first portion has a first resistivity, and the second portion has a second resistivity, and the portions are connected so that the resistor has an overall temperature coefficient that is approximately zero.

Abstract: A heating element includes a base substrate, a pair of electrodes, a resistor capable of generating heat, a conductive resin, a terminal member, a hot melt adhesion metal, a hot melt cohesion metal, and a lead wire. The pair of electrodes is provided on the base substrate, and the resistor is formed between the pair of electrodes. The conductive resin is provided on each of the electrodes, and the terminal member is provided on the conductive resin. The adhesion metal is provided on the terminal member, and the cohesion metal forms a molten phase along with the adhesion metal. An end of the lead wire is welded to the cohesion metal. The conductive resin is provided in the vicinity of the adhesion metal so as to be affected by heat of the adhesion metal.

Abstract: This document discloses low variation resistor devices, methods, systems, and methods of manufacturing the same. In some implementations, a low-variation resistor can be implemented with a metal-oxide-semiconductor field-effect-transistor (“MOSFET”) operating in the triode (e.g., ohmic) region. The MOSFET can have a source that is connected to a reference voltage (e.g., ground) and a gate connected to a gate voltage source. The gate voltage source can generate a gate voltage that varies in proportion to changes in the temperature of an operating environment. The gate voltage variation can, for example, be controlled so that it offsets the changes in MOSFET resistance that are caused by changes in temperature. In some implementations, the gate voltage variation offsets the resistance variance by offsetting changes in transistor mobility that are caused by changes in temperature.

Abstract: A resistor element with a ceramic body that has PTC properties is specified. At least one main surface of the ceramic body has an arrangement of depressions.

Abstract: A resistor having a uniform resistance, in which a serial resistance of resistors with different resistance temperature coefficients is not influenced by change in temperature, and a semiconductor device using the same includes: a first resistor having a first width and a first length and having a negative resistance temperature coefficient; and a second resistor serially connected to the first resistor, the second resistor having a positive resistance temperature coefficient, wherein the second resistor has a second width and a second length of different dimensions to satisfy a following Equation x=?(Tp×Rp)/Ta×Ra, where Tp and Ta are the respective resistance temperature coefficients of the first and the second resistors, and Rp and Ra are the respective sheet resistances of the first and the second resistors.

Abstract: A high precision power resistor having the improved property of reduced resistance change due to power is disclosed. The resistor includes a substrate having first and second flat surfaces and having a shape and a composition; a resistive foil having a low TCR of about 0.1 to about 1 ppm/° C. and a thickness of about 0.03 mils to about 0.7 mils cemented to one of the flat surfaces with a cement, the resistive foil having a pattern to produce a desired resistance value, the substrate having a modulus of elasticity of about 10×106 psi to about 100×106 psi and a thickness of about 0.5 mils to about 200 mils, the resistive foil, pattern, type and thickness of cement, and substrate being selected to provide a cumulative effect of reduction of resistance change due to power. The present invention also provides for a method of producing a high precision power resistor.

Abstract: A high precision power resistor having the improved property of reduced resistance change due to power is disclosed. The resistor includes a substrate having first and second flat surfaces and having a shape and a composition; a resistive foil having a low TCR of about 0.1 to about 1 ppm/° C. and a thickness of about 0.03 mils to about 0.7 mils cemented to one of the flat surfaces with a cement, the resistive foil having a pattern to produce a desired resistance value, the substrate having a modulus of elasticity of about 10×106 psi to about 100×106 psi and a thickness of about 0.5 mils to about 200 mils, the resistive foil, pattern, type and thickness of cement, and substrate being selected to provide a cumulative effect of reduction of resistance change due to power.

Abstract: A semiconductor device includes a polysilicon resistor that can suppress variations in resistance value in environments with an ambient temperature higher than room temperature. The resistance value Rcon of a polysilicon contact is reduced to 2% or less of the sum of the resistance value Rcon of the polysilicon contact and the resistance value Rpoly of a polysilicon resistor. Hence, a semiconductor device that is not significantly affected by a variation in the resistance of the polysilicon contact is realized. This device suppresses variations in resistance value in environments with an ambient temperature higher than room temperature.

Abstract: A thin film resistor that has a substantially zero TCR is provided as well as a method for fabricating the same. The thin film resistor includes at least two resistor materials located over one another. Each resistor material has a different temperature coefficient of resistivity such that the effective temperature coefficient of resistivity of the thin film resistor is substantially 0 ppm/° C. The thin film resistor may be integrated into a interconnect structure or it may be integrated with a metal-insulator-metal capacitor (MIMCAP).

Abstract: A resistor having a desired temperature coefficient of resistance and a total electrical resistance. A first resistor segment has a first temperature coefficient of resistance and a first electrical resistance. A second resistor segment has a second temperature coefficient of resistance and a second electrical resistance. The first resistor segment is electrically connected in series with the second resistor segment, and the total electrical resistance equals a sum of the first electrical resistance and the second electrical resistance. The desired temperature coefficient of resistance is determined at least in part by the first temperature coefficient of resistance and the first electrical resistance of the first resistor and the second temperature coefficient of resistance and the second electrical resistance of the second resistor.

Abstract: A method for manufacturing a thin film negative temperature coefficient thermistor is disclosed. The method includes selecting a negative temperature coefficient of resistance versus temperature curve, selecting a mixture of metal film materials to provide the negative temperature coefficient of resistance curve while maintaining a desired physical size, and depositing the mixture of metal film materials on a substrate.

Abstract: A high power resistor includes a resistance element with first and second leads extending out from the opposite ends thereof. A heat sink of dielectric material is in heat conducting relation to the resistance element. The heat conducting relationship of the resistance element and the heat sink render the resistance element capable of operating as a resistor between the temperatures of −65° C. to +275° C. The heat sink is adhered to the resistance element and a molding compound is molded around the resistance element.

Abstract: A high precision power resistor having the improved property of reduced resistance change due to power is disclosed. The resistor includes a substrate having first and second flat surfaces and having a shape and a composition; a resistive foil having a low TCR of about 0.1 to about 1 ppm/° C. and a thickness of about 0.03 mils to about 0.7 mils cemented to one of the flat surfaces with a cement, the resistive foil having a pattern to produce a desired resistance value, the substrate having a modulus of elasticity of about 10×106 psi to about 100×106 psi and a thickness of about 0.5 mils to about 200 mils, the resistive foil, pattern, type and thickness of cement, and substrate being selected to provide a cumulative effect of reduction of resistance change due to power.

Abstract: A dielectrically isolated temperature compensated pressure transducer including: a wafer including a deflectable diaphragm formed therein, the diaphragm being capable of deflecting in response to an applied pressure, and the diaphragm defining an active region surrounded by an inactive region of the wafer; a plurality of dielectrically isolated piezoresistive elements formed on the active region of the wafer and coupled together to form a Wheatstone bridge configuration so as to cooperatively provide an output signal in response to and indicative of an amount of deflection of the diaphragm, the plurality of piezoresistive elements being undesirably operative to introduce an undesirable error into the output according to exposure of the wafer to an environmental condition; and, a dielectrically isolated resistor formed on the inactive region of the wafer and electrically coupled in series to the plurality of piezoresistive elements so as to at least partially compensate for the undesirable error.

Abstract: A temperature-compensated semiconductor resistor includes two series-connected semiconductor resistance elements having mutually inverse resistive temperature-dependent responses in a temperature range of interest. The semiconductor resistance elements are preferably made of doped polycrystalline semiconductor material such as polycrystalline silicon that is oppositely doped, i.e. n-doped and p-doped, respectively. A semiconductor integrated circuit, in particular a CMOS circuit, containing a semiconductor resistor, is also provided.

Abstract: A resistor having a desired temperature coefficient of resistance and a total electrical resistance. A first resistor segment has a first temperature coefficient of resistance and a first electrical resistance. A second resistor segment has a second temperature coefficient of resistance and a second electrical resistance. The first resistor segment is electrically connected in series with the second resistor segment, and the total electrical resistance equals a sum of the first electrical resistance and the second electrical resistance. The desired temperature coefficient of resistance is determined at least in part by the first temperature coefficient of resistance and the first electrical resistance of the first resistor and the second temperature coefficient of resistance and the second electrical resistance of the second resistor.

Abstract: To compensate for temperature dependent variations and process variations in surface resistance of a main resistor (R1) on a chip (1), one or more compensating resistors (R11, R12. . . R1n) can be connected in series with the first resistor (R1) via normally open switches (SR11, SR12. . . SR1n). The switches are closed to connect one or more of the compensating resistors (R11, R12. . . SR1n) in series with the main resistor (R1) in response to whether the voltage across resistors (R21, R22. . . R2n) produced on the chip (1) in the same process and proportional to the compensating resistors (R11, R12. . . R1n) is higher or lower than a fixed reference voltage (VR3).

Abstract: A thermally actuated fluidic optical switching circuit that includes a heater substructure having heater resistors and thermally conductive regions associated with the heater resistors and configured to tailor the thermal characteristics of the heater substructure.

Abstract: To compensate for temperature dependent variations and process variations in surface resistance of a main resistor (R1) on a chip (1), one or more compensating resistors (R11, R12 . . . R1n) can be connected in series with the first resistor (R1) via normally open switches (SR11, SR12 . . . SR1 n). The switches are closed to connect one or more of the compensating resistors (R11, R12 . . . R1n) in series with the main resistor (R1) in response to whether the voltage across resistors (R21, R22 . . . R2n) produced on the chip (1) in the same process and proportional to the compensating resistors (R11, R12 . . . R1n) is higher or lower than a fixed reference voltage (VR3).

Abstract: An integrated circuit containing a resistor and the resistor per se. The circuit includes a substrate (2), a semiconductor resistor (3) on the substrate and a layer of electrically insulating material (5) disposed over the substrate and the semiconductor resistor having at least one contact (11, 13, 15) extending therethrough to the semiconductor resistor, the contact having an electrical path therein extending to and forming an interface with an end portion of the semiconductor resistor. The semiconductor resistor has a semiconductor resistor body, preferably of doped polysilicon, having one of a positive or negative temperature coefficient of resistance and a resistor head. The resistor head consists essentially of the electrical path which is metal interconnect, the contacts and then interface to and from the resistor body and in contact with the resistor body, the resistor head having the other of a positive or negative temperature coefficient of resistance.

Abstract: A heating element, preferably for oblong plate-shaped sensors for measuring oxygen concentration in internal combustion engine exhaust gas, has a conductive heating strip at one end of the heating element and electrical conductors which are connected electrically to the conductive heating strip and which supply the heating current and provide connection to the other end of the heating element. The positive temperature coefficient of the resistor material of the conductive heating strip is lower than the positive temperature coefficient of the material of at least one section of the conductors.

Abstract: Chemical sensors for detecting analytes in fluids comprise first and second conductive elements (e.g., electrical leads) electrically coupled to and separated by a chemically sensitive resistor which provides an electrical path between the conductive elements. The resistor comprises a plurality of alternating nonconductive regions (comprising a nonconductive organic polymer) and conductive regions (comprising a conductive material) transverse to the electrical path. The resistor provides a difference in resistance between the conductive elements when contacted with a fluid comprising a chemical analyte at a first concentration, than when contacted with a fluid comprising the chemical analyte at a second different concentration. Arrays of such sensors are constructed with at least two sensors having different chemically sensitive resistors providing dissimilar such differences in resistance.

Abstract: A sensor array for detecting an analyte in a fluid, comprising at least first and second chemically sensitive resistors electrically connected to an electrical measuring apparatus, wherein each of the chemically sensitive resistors comprises a mixture of nonconductive material and a conductive material. Each resistor provides an electrical path through the mixture of nonconductive material and the conductive material. The resistors also provide a difference in resistance between the conductive elements when contacted with a fluid comprising an analyte at a first concentration, than when contacted with an analyte at a second different concentration. A broad range of analytes can be detected using the sensors of the present invention.

Abstract: A metal alloy having an intrinsically low TCR, and which preferably comprises a metal oxide and forms part of the resistance material in a quantity of 15-60 vol. %. The best results are achieved with a resistance material which comprises an alloy of CuNi as the metal alloy and SiO.sub.2 as the high-ohmic component. The resistors exhibit a relatively high resistance value as well as a relatively low TCR value.

Abstract: Chemical sensors for detecting analytes in fluids comprise first and second conductive elements (e.g. electrical leads) electrically coupled to and separated by a chemically sensitive resistor which provides an electrical path between the conductive elements. The resistor comprises a plurality of alternating nonconductive regions (comprising a nonconductive organic polymer) and conductive regions (comprising a conductive material) transverse to the electrical path. The resistor provides a difference in resistance between the conductive elements when contacted with a fluid comprising a chemical analyte at a first concentration, than when contacted with a fluid comprising the chemical analyte at a second different concentration. Arrays of such sensors are constructed with at least two sensors having different chemically sensitive resistors providing dissimilar such differences in resistance.

Abstract: Chemical sensors for detecting analytes in fluids comprise first and second conductive elements (e.g., electrical leads) electrically coupled to and separated by a chemically sensitive resistor which provides an electrical path between the conductive elements. The resistor comprises a plurality of alternating nonconductive regions (comprising a nonconductive organic polymer) and conductive regions (comprising a conductive material) transverse to the electrical path. The resistor provides a difference in resistance between the conductive elements when contacted with a fluid comprising a chemical analyte at a first concentration, than when contacted with a fluid comprising the chemical analyte at a second different concentration. Arrays of such sensors are constructed with at least two sensors having different chemically sensitive resistors providing dissimilar such differences in resistance.

Abstract: Chemical sensors for detecting analytes in fluids comprise first and second conductive elements (e.g. electrical leads) electrically coupled to and separated by a chemically sensitive resistor which provides an electrical path between the conductive elements. The resistor comprises a plurality of alternating nonconductive regions (comprising a nonconductive organic polymer) and conductive regions (comprising a conductive material) transverse to the electrical path. The resistor provides a difference in resistance between the conductive elements when contacted with a fluid comprising a chemical analyte at a first concentration, than when contacted with a fluid comprising the chemical analyte at a second different concentration. Arrays of such sensors are constructed with at least two sensors having different chemically sensitive resistors providing dissimilar such differences in resistance.

Abstract: According to the present invention, there is provided a metal oxide film resistor which has an insulating substrate, a metal oxide resistive film having at least a metal oxide film having a positive temperature coefficient of resistance and/or a metal oxide film having a negative temperature coefficient of resistance, and/or a metal oxide insulating film. The metal oxide film resistor is not affected by moisture or alkali ions in the insulating substrate. The resistance of the film itself does not change. The metal oxide film resistor is extremely reliable.

Abstract: A small-size high-performance electronic protective device (10) is provided for use in protecting communication equipment including an exchange servicing module against application of abnormal surge current due to accidental shorts between adjacent ones of power feed lines in a communications system. The protective device (10) includes positive thermistors (3a, 3b) connected between communication link input terminals (1a, 1b) and output terminals (1c, 1d) coupled to an associative equipment being protected. The protective device (10) also includes thick-film resistive elements (5a, 5b), which are connected in parallel with the thermistors (3a, 3b), respectively.

Abstract: A varistor and a PTC resistor formed from a composite material containing a polymer matrix and a filler. The varistor experiences two nonlinear changes caused by the current due to applied voltage, the varistor comprising a composite material comprising a filler and a polymer matrix, the filler consisting of particles of grained microstructure. The PTC resistor experiences a first nonlinear dependency of resistivity at a first PTC temperature resulting from an interaction of the filler and the polymer matrix and a second nonlinear dependency of resistivity at a second, lower PTC temperature resulting from the filler.

Abstract: In order to improve uniformity of temperature distribution, despite heat which is generated in a resistance circuit and flows into a support part thereby causing a high output, a resistance circuit is provided with first, second and third regions having different resistance values so that the third region which is in proximity to the support part has the highest resistance value.

Abstract: The power resistor has a metal housing and heatsink, the bottom wall of which is planar and has a bolt hole therethrough for tight securing of the resistor to a chassis. A planar film-type power resistor is mounted in the housing and encapsulated therein, being held close to the bottom wall of the housing. Heat from the film-type resistor passes through the bottom wall into the chassis, the result being that the power rating of the resistor is high. The metal housing is die-cast of a zinc alloy, at extremely low cost yet with substantially the same heat-transmission characteristic as that of conventional die-castable aluminum alloys.

Abstract: A chip resistor whose resistive element provides a power density of at least 20 watts per square inch is provided with an air gap between the resistance element and the electrical contact junctions of the conductive strips electrically connected to the resistance element and terminals attached to the chip resistor. The air gap has a length approximately 70% of the distance between opposing edges of the planar body forming the chip to so restrict heat flow as to prevent the electrical contact junctions from exceeding a temperature of about 175.degree. C. when the resistive element is at a temperature of 350.degree. C. or more.

Abstract: A flat resistance for a blower control unit of an automobile air conditioner, and a blower control unit using the same. The flat resistance includes: a porcelain enameled metallic substrate including a flat head portion, having an edge and one surface, and parallel terminal supporting portions projecting outwardly from the edge of the head; a resistance circuit printed on the one surface of the head portion, the resistance circuit including a plurality of resistances electrically connected in series; a temperature fuse, interposed in the resistance circuit, for being tripped to break the resistance circuit when the porcelain enameled metallic substrate becomes overheated; and terminals, printed on both the head portion and the terminal supporting portions, each terminal being connected to one end of a corresponding one of the resistances.

Abstract: A high-precision and high-stability resistor element, which exhibits zero, or close to zero, resistance deviation during time and in given temperature and power ranges, includes a bonded sandwich of several substrates of inorganic insulating material having a substantially zero coefficient of thermal expansion with one or more R (Resistance) and TCR (Temperature Coefficient of Resistance) trimmed resistive metal foil patterns which can be retrimmed in two directions during periodic verifications.

Abstract: A thermal radiation sensor is suggested which comprises two receiver surfaces exposed to the radiation, one receiver surface (1) having a high absorption capacity with respect to the thermal radiation, the other (2) having a low absorption capacity, the two receiver surfaces (1) and (2) consist of a NTC resistance material and are combined in a bridge circuit together with two temperature-independent cermet resistors (3) and (4). In order to prevent a dependency of the measurements of such a sensor on the ambient temperature, the NTC resistors (1) and (2) comprise underlying heating layers (6) and (7) which keep the two NTC resistors at a constant temperature. Insulating layers (8) and (9) are provided between the NTC resistors (1) and (2) and the heating layers (6) and (7). The heating layers (6) and (7) consist of a cermet thick film with platinum or of a platinum thick film and have the shape of a meander. The insulating layers (8) and ( 9) preferably consist of a crystallizing glass.