Temperature-compensated Actuator Patents (Class 338/8)
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Patent number: 7671409Abstract: A field-effect transistor power device includes a source electrode, a drain electrode, a wide gap semiconductor including a channel region and a drift region, the channel region and the drift region forming a series current path between the source electrode and the drain electrode, a gate insulating film that covers the channel region, and a gate electrode formed on the gate insulating film. In the series current path which is electrically conducting when the field-effect transistor power device is in an ON state, any region other than the channel region has an ON resistance exhibiting a positive temperature dependence, and the channel region has an ON resistance exhibiting a negative temperature dependence. A ratio ?Ron/Ron(?30° C.) is 50% or less.Type: GrantFiled: June 10, 2005Date of Patent: March 2, 2010Assignee: Panasonic CorporationInventors: Makoto Kitabatake, Osamu Kusumoto, Masao Uchida, Kunimasa Takahashi, Kenya Yamashita, Koichi Hashimoto
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Patent number: 7097110Abstract: Disclosed herein are methods and systems for sensing and controlling the temperature of a resistive element configured for use in a read/write head of a magnetic data storage device. In one embodiment, a method includes detecting a voltage across the resistive element, where the voltage varies as a function of a temperature of the resistive element. The method also includes comparing the voltage to a predetermined value to determine a variation of the voltage from the predetermined value, and then altering a power applied to the resistive element based on the variation. In this exemplary embodiment, the temperature of the resistive element is then controlled as a function of the altered applied power.Type: GrantFiled: December 16, 2003Date of Patent: August 29, 2006Assignee: Texas Instruments IncorporatedInventors: Michael W. Sheperek, Bryan E. Bloodworth
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Patent number: 7095309Abstract: The invention concerns thermoelastic designs incorporating and expansive element formed from material selected in accordance a procedure involving the derivation of an indicator of the material's potential effectiveness for each application.Type: GrantFiled: October 20, 2000Date of Patent: August 22, 2006Assignee: Silverbrook Research Pty LtdInventors: Gregory John McAvoy, Kia Silverbrook
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Patent number: 6960979Abstract: A resistor having a desired temperature coefficient of resistance and a total electrical resistance. A first resistor segment has a first temperature coefficient of resistance and a first electrical resistance. A second resistor segment has a second temperature coefficient of resistance and a second electrical resistance. The first resistor segment is electrically connected in series with the second resistor segment, and the total electrical resistance equals a sum of the first electrical resistance and the second electrical resistance. The desired temperature coefficient of resistance is determined at least in part by the first temperature coefficient of resistance and the first electrical resistance of the first resistor and the second temperature coefficient of resistance and the second electrical resistance of the second resistor.Type: GrantFiled: July 8, 2003Date of Patent: November 1, 2005Assignee: LSI logic CorporationInventor: Robindranath Banerjee
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Patent number: 6960731Abstract: A rotating contact supporting shaft for a low-voltage power circuit breaker, whose particularity consists of the fact that it has a modular structure that comprises, along the rotation axis, at least one first and one second supporting module (10, 20), each module being functionally coupled to at least one corresponding moving contact (3) of the circuit breaker and being provided respectively with first and second means (22) for connection to at least one first interconnection module (30); the first interconnection module is interposed between the first and second supporting modules and is provided with third and fourth connection means (31) that are suitable to be coupled respectively to the first and second connection means; the coupling between the first and third connection means and between the second and fourth connection means allows the functional connection between the first and second supporting modules and the direct structural connection of the interconnection module to the first and second supporType: GrantFiled: December 10, 2002Date of Patent: November 1, 2005Assignee: ABB Services S.r.l.Inventors: Lucio Azzola, Eligio Zanchi
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Patent number: 6646539Abstract: A temperature-compensated semiconductor resistor includes two series-connected semiconductor resistance elements having mutually inverse resistive temperature-dependent responses in a temperature range of interest. The semiconductor resistance elements are preferably made of doped polycrystalline semiconductor material such as polycrystalline silicon that is oppositely doped, i.e. n-doped and p-doped, respectively. A semiconductor integrated circuit, in particular a CMOS circuit, containing a semiconductor resistor, is also provided.Type: GrantFiled: October 31, 2001Date of Patent: November 11, 2003Assignee: Infineon Technologies AGInventor: Martin Bloch
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Patent number: 6621404Abstract: A resistor having a desired temperature coefficient of resistance and a total electrical resistance. A first resistor segment has a first temperature coefficient of resistance and a first electrical resistance. A second resistor segment has a second temperature coefficient of resistance and a second electrical resistance. The first resistor segment is electrically connected in series with the second resistor segment, and the total electrical resistance equals a sum of the first electrical resistance and the second electrical resistance. The desired temperature coefficient of resistance is determined at least in part by the first temperature coefficient of resistance and the first electrical resistance of the first resistor and the second temperature coefficient of resistance and the second electrical resistance of the second resistor.Type: GrantFiled: October 23, 2001Date of Patent: September 16, 2003Assignee: LSI Logic CorporationInventor: Robindranath Banerjee
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Patent number: 6614342Abstract: A high-performance strain gauge has a high gauge factor and a decreased temperature coefficient of resistance (TCR). The strain gauge has a laminated structure that includes a first layer formed of a positive TCR material and a second layer formed of a negative TCR material.Type: GrantFiled: January 8, 2002Date of Patent: September 2, 2003Assignee: NOK CorporationInventor: Masaaki Kanamori
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Patent number: 4788521Abstract: A temperature compensation scheme for a piezoresistive pressure sensor utilizing resistors with carefully chosen temperature coefficients of resistivity to provide a totally passive network.Type: GrantFiled: April 7, 1988Date of Patent: November 29, 1988Assignee: Honeywell Inc.Inventor: Russell L. Johnson
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Patent number: 4206437Abstract: A movable member pressure transducer is disclosed which incorporates various thermal and manufacturing tolerance compensation features. These include a temperature compensating bimetal interposed between the movable member and the pressure sensing aneroid; a threaded engagement between a potentiometer wiper contact and a movable member used to generate an electrical signal corresponding to the position of a lower member, with the threaded engagement allowing adjustment of the zero position of the wiper contact with respect to the potentiometer resistive element; a cantilevered spring is mounted in contact with the free end of the movable member. The cantilever spring mounted in a holder is constructed of a material selected to have a coefficient of thermal expansion compensating for variations in sensitivity due to temperature changes by corresponding changes in the effective lever arm of the cantilever spring by shifting the point of contact of the end of the movable member with the cantilever spring.Type: GrantFiled: October 2, 1978Date of Patent: June 3, 1980Assignee: The Bendix CorporationInventor: Charles T. Wu