Abstract: A method includes forming a fin extending from a substrate; forming an first isolation region along opposing sidewalls of the fin; forming a gate structure over the fin; forming an epitaxial source/drain region in the fin adjacent the gate structure; forming an etch stop layer over the epitaxial source/drain region and over the gate structure; forming a protection layer over the etch stop layer, the protection layer including silicon oxynitride; and forming a second isolation material over the protection layer, wherein forming the second isolation material reduces a nitrogen concentration of the protection layer.

Abstract: Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. The methods may further include venting the chamber, where the venting vaporizes the liquid phase of the drying agent from the semiconductor substrate.

Abstract: An apparatus for drying an item includes a container including a width and a height, an insert including a planar surface positioned parallel to the width at a first point along the height, wherein the insert surface includes a plurality of openings, a perforated tray positioned parallel to the width at a second point along the height between the insert and a bottom of the container, and a desiccant material positioned on the tray.

Abstract: The present invention improves the wetting between process solution and the wafer surface when they are put into contact by pre-implementing an adsorbed liquid layer on the entire front surface of the wafer just prior to the process. The pre-implementing adsorbed liquid layer is realized by transporting vaporized liquid molecules from vapor phase at elevated temperature (relative to wafer) and condensing them onto wafer surface. The pre-implementing adsorbed liquid is fully filled in the patterned structures formed on the wafer by multilayer absorption of the vaporized liquid molecules and the temperature of the wafer surface is above dew point of the vaporized liquid while condensing, which avoids generating bubbles inside the patterned structures.

Abstract: An evacuation method which can reduce evacuation time without causing moisture-related problems. In a vacuum processing apparatus including a vacuum processing chamber, during the evacuation for the vacuum processing chamber, the pressure in the vacuum processing chamber is maintained at a pressure lower than or equal to the atmospheric pressure but higher than or equal to 6.7×102 Pa (5 Torr).

Abstract: The present invention provides for a process for preserving biological material. The process comprises subjecting the biological material to a fixation process and then packaging the biological material in a container under a controlled atmosphere of noble gas. In the process, the controlled atmosphere of noble gas utilized comprises one or more noble gases selected from argon, xenon, helium, neon, krypton and radon. The process optionally also utilizes one or more additional gases selected from nitric oxide, hydrogen, hydrogen sulfide, carbon monoxide, carbon dioxide, nitrogen and oxygen. This process allows for the long term storage of the biological material.

Abstract: A method for removing moisture from a substrate coated with a transparent electrode comprises the steps of placing the substrate coated with the transparent electrode in an infrared oven, applying heat to the substrate in the infrared oven, drawing the substrate from the infrared oven, loading the substrate in a chamber and reducing pressure in the chamber and performing a heat treatment on the substrate.

Abstract: The invention relates to method and device for drying materials of plant and animal origin. The method includes heating a material to a temperature that does not cause denaturation of the original properties thereof, high-speed pulse vacuuming, maintaining the vacuum tor a period of time, and relieving the vacuum until atmospheric pressure is reached. The material is heated in a drying chamber and the vacuum is relieved using a dried air or gas heat earner with a temperature of up to 300° C. A device comprises two drying chambers with hermetically sealing doors, which are connected by pipes haying fast-acting valves to a receiver tank, heat exchangers and condensate receivers, a vacuum pump and a device for heating and delivering a heat carrier, which is situated in a separate thermally insulated chamber and is connected to the inlet of each drying chamber by means of thermally insulated air delivery conduits with valves.

Abstract: Disclosed herein are devices, methods and systems for ex-situ component recovery. The ex-situ recovery can be performed by desorbing or outgassing components of a processing system in a recovery system, rather than in the processing system itself. The recovery system can include a docking station and/or a heated vacuum chamber. The heated vacuum chamber can be used to desorb or outgas components that will be located inside the processing system, while the docking station can be used to desorb or outgas components that will be connected to the processing system. The processing system components can be placed under pressure by the recovery system to desorb or outgas contaminants and remove virtual leaks. The recovery system pressure can include a vacuum roughing pump, a turbomolecular pump, and/or a cryogenic pump to apply a pressure necessary to desorb or outgas the components.

Abstract: Methods and devices of drying biological materials are described, including a desiccation chamber that may be used to dry biological materials while substantially preserving functional integrity of those materials. The desiccation devices and methods provide optimal conditions and ease of use for drying biological materials. The devices and methods provided here may be used to prepare biological materials for use in one or more of diagnostic, therapeutic, industrial, and research applications.

Abstract: Parts to be chemically treated are processed in a controlled-environment processing chamber. The process includes applying a negative gauge pressure to the chamber to remove air or other non-condensable gases. The process includes introducing an oxygen free solvent or aqueous solution in a vapor or liquid state. A first system removes oxygen and volatile contaminants from the object being processed and chamber, and a second system further recovers residual solvent from the object and chamber. Eliminating oxygen from the process prevents deflagration within the system thus allowing for the use of flammable solvents within the process.

Abstract: A device for drying substrate comprising a processing vessel housing a specified number of substrates such as semiconductor wafers installed erectedly in parallel to one another, a first substrate supporting member supporting substrates within the processing vessel, the processing fluid supplying section supplying to the processing vessel, the processing fluid for performing processing such as cleaning processing on the substrates, a processing fluid exhausting section exhausting processing fluid from the processing vessel, and a drying fluid supplying section supplying, to the processing vessel, the liquid drops of drying fluid for performing drying processing on the substrates.

Abstract: A wafer drying method includes submerging a wafer in a cleaning solution in a dry chamber. An organic liquid vapor from an organic liquid is supplied into the dry chamber at a first volumetric supply rate to form an organic liquid layer on a surface of the cleaning solution, the organic liquid layer having at least a prescribed concentration of the organic liquid. The organic liquid vapor is supplied into the dry chamber at a second volumetric supply rate that is lower than the first volumetric supply rate. During and/or following the supplying of the organic liquid vapor into the dry chamber, at least a portion of the wafer is removed from the cleaning solution through the organic liquid layer.

Abstract: An instantaneous pressure reducing heating and drying apparatus for an object, such as a wafer, includes a pressure reducing chamber; a vacuum pump for reducing a pressure in the pressure reducing chamber to below atmospheric pressure; a drying chamber installed within the pressure reducing chamber for drying the object that is loaded in the drying chamber; a pressure regulating valve installed in a wall of the drying chamber, wherein when the pressure regulating valve is opened a pressure in the drying chamber is instantaneously reduced to the pressure of the pressure reducing chamber; and a heating means for heating the drying chamber. In operation, the vacuum pump reduces a pressure of the pressure reducing chamber to below atmospheric pressure, and the pressure regulating valve installed in a wall of the drying chamber opens thereby instantaneously reducing the pressure the drying chamber to the reduced pressure of the pressure reducing chamber.

Abstract: Disclosed is a high pressure processing method for subjecting a processing object to a high pressure processing using a high pressure fluid. In this method, the high pressure fluid is brought into collision with the surface of the processing object placed in a high pressure processing chamber, and then distributed along the surface of the processing object in an outward direction beyond the processing object.

Abstract: A system for high-pressure drying of semiconductor wafers includes the insertion of a wafer into an open vessel, the immersion of the wafer in a liquid, pressure-sealing of the vessel, pressurization of the vessel with an inert gas, and then the controlled draining of the liquid using a moveable drain that extracts water from a depth maintained just below the gas-liquid interface. Thereafter, the pressure may be reduced in the vessel and the dry and clean wafer may be removed. The high pressure suppresses the boiling point of liquids, thus allowing higher temperatures to be used to optimize reactivity. Megasonic waves are used with pressurized fluid to enhance cleaning performance. Supercritical substances are provided in a sealed vessel containing a wafer to promote cleaning and other treatment.

Abstract: The present invention relates to a method of fumigating closed systems susceptible to microbially influenced corrosion (MIC). The method is particularly useful in a method for mitigating MIC in fire protection sprinkler systems.

Abstract: A system for high-pressure drying of semiconductor wafers includes the insertion of a wafer into an open vessel, the immersion of the wafer in a liquid, pressure-sealing of the vessel, pressurization of the vessel with an inert gas, and then the controlled draining of the liquid using a moveable drain that extracts water from a depth maintained just below the gas-liquid interface. Thereafter, the pressure may be reduced in the vessel and the dry and clean wafer may be removed. The high pressure suppresses the boiling point of liquids, thus allowing higher temperatures to be used to optimize reactivity. Megasonic waves are used with pressurized fluid to enhance cleaning performance. Supercritical substances are provided in a sealed vessel containing a wafer to promote cleaning and other treatment.

Abstract: The present invention relates to a system for cleaning a pressurized container having at least one chemical contained therein. More specifically, the container may store a quantity of a chemical that is reactive with water and forms dangerous reaction products, such as, for example, acids. The pressurized container may be any type of container able to store chemicals under pressure. Preferably, however, the container may be a rail tank car. The system includes the container that may have a plurality of valves for adding or removing gaseous or liquid material to or from the container. The container may be connected with a nitrogen tank or a fan for blowing air that may be heated via a heater. A vacuum pump is utilized for removing the contents of the container. The container may further be connected to a reaction tank for neutralizing the chemical that is be removed from the container.

Abstract: A system (10) is disclosed for cleaning a vertical furnace (12) pedestal (34) and cap (36) including at least one inlet conduit (40) in fluid communication with a pressurized cleaning medium source (46). The system also includes at least one exhaust conduit (42) in fluid communication with a negative pressure source (48). A boat assembly (30) may be positioned such that the at least one conduit (40) is operable to direct cleaning medium at the boat assembly (30) to dislodge contaminate particles associated with the boat assembly. The exhaust outlet (42) then evacuates the cleaning medium and any dislodged contaminate particles. The system may operate automatically within a closed processing environment and after each process cycle.

Abstract: A method of and an apparatus for drying a wafer using the Marangoni effect quickly forms an isopropyl alcohol layer on a cleaning liquid in which the wafer is submerged. The isopropyl alcohol is first heated and then supplied in a fluid state onto the cleaning liquid. The isopropyl alcohol liquid thus diffuses rapidly to form the isopropyl alcohol layer. The wafer is thoroughly dried by removing it from the cleaning liquid through the isopropyl alcohol while only supplying more of the heated nitrogen gas into the ambient above the cleaning liquid.

Abstract: A system for high-pressure drying of semiconductor wafers includes the insertion of a wafer into an open vessel, the immersion of the wafer in a liquid, pressure-sealing of the vessel, pressurization of the vessel with an inert gas, and then the controlled draining of the liquid using a moveable drain that extracts water from a depth maintained just below the gas-liquid interface. Thereafter, the pressure may be reduced in the vessel and the dry and clean wafer may be removed. The high pressure suppresses the boiling point of liquids, thus allowing higher temperatures to be used to optimize reactivity. Megasonic waves are used with pressurized fluid to enhance cleaning performance. Supercritical substances are provided in a sealed vessel containing a wafer to promote cleaning and other treatment.

Abstract: A system for high-pressure drying of semiconductor wafers includes the insertion of a wafer into an open vessel, the immersion of the wafer in a liquid, pressure-sealing of the vessel, pressurization of the vessel with an inert gas, and then the controlled draining of the liquid using a moveable drain that extracts water from a depth maintained just below the gas-liquid interface. Thereafter, the pressure may be reduced in the vessel and the dry and clean wafer may be removed. The high pressure suppresses the boiling point of liquids, thus allowing higher temperatures to be used to optimize reactivity. Megasonic waves are used with pressurized fluid to enhance cleaning performance. Supercritical substances are provided in a sealed vessel containing a wafer to promote cleaning and other treatment.

Abstract: The present invention provides a drying method for removing a residual solution from a semiconductor wafer. The semiconductor wafer is placed into a chamber, and then the air pressure of the chamber is lowered from atmospheric pressure to a lower pressure. Next, an inert gas with a predetermined pressure is injected into the chamber to exchange with the dissolved oxygen in the residual solution. The pressure in the chamber is reduced to 0.5˜100 torr so as to lower the boiling point of the solution and to remove the displaced oxygen. Finally, a heating process is performed to completely evaporate the residual solution on the semiconductor wafer.

Abstract: A method of transferring and processing a substrate in an evacuable chamber which is located adjacent a process chamber and back-to-back process chambers, and other combinations of evacuable chambers and process chambers. The method includes the use of various isolation valves disposed between adjacent chambers, as well as gas flow valves and vacuum valves. By controlling the positions of the valves, the flow of gas to and from the different chambers can be controlled.

Abstract: A method and apparatus for high-pressure drying of semiconductor wafers includes the insertion of a wafer into an open vessel, the immersion of the wafer in a liquid, pressure-sealing of the vessel, pressurization of the vessel with an inert gas, and then the controlled draining of the liquid using a moveable drain that extracts water from a depth maintained just below the gas-liquid interface. Thereafter, the pressure may be reduced in the vessel and the dry and clean wafer may be removed. The high pressure suppresses the boiling point of liquids, thus allowing higher temperatures to be used to optimize reactivity. Megasonic waves are used with pressurized fluid to enhance cleaning performance. Supercritical substances are provided in a sealed vessel containing a wafer to promote cleaning and other treatment.

Abstract: An apparatus and method for clamping and heating a wafer without using moving parts and without exposing the wafer to external stress is provided. A high backside wafer pressure which provides efficient heat transfer from a heated substrate support to the wafer is offset by a high frontside wafer pressure higher than or lower than the backside wafer pressure. The high frontside pressure reduces wafer stress by providing a uniform frontside/backside pressure and presses the wafer against the heated substrate support. A continuous gas purge for providing a viscous flow across the wafer to carry away desorbed contaminants, and frontside heating elements for improving desorption are provided.

Abstract: A method of transporting a reticle is disclosed. The reticle is placed in a reticle carrier that has an ionizer. Moreover, the reticle may be attached with a pellicle. The pellicle consists of a pellicle frame and a pellicle film stretched over the pellicle frame. The pellicle frame has included within an absorbent material.

Abstract: In one embodiment, a cart (5) having a first vessel (10) which fits within a second vessel (90) is used to transport and store an integrated circuit substrate. The integrated circuit substrate is placed within the first vessel (10) and the door (18) of the first vessel (10) is closed and sealed against a door seal (24). The first vessel (10) is then purged with nitrogen to expel moisture and reactive gases from the interior of the first vessel (10). After purging, the first vessel (10) is then placed within the second vessel (90). The door (102) of the second vessel (90) is then closed and sealed against a door seal (104). The second vessel (90) is then purged with nitrogen to expel moisture and reactive gases from the interior of the second vessel (90). The cart (5) containing the integrated circuit substrate is then transported to the next manufacturing area. Integrated circuits and other articles may be manufacturing using the cart system of the present invention.

Abstract: A dryer for use with chemical compounds employs controlled vacuum, elevated temperature and dry, inert gas to dry the chemical compounds. The dryer includes a vacuum chamber into which trays containing the compounds are placed. The chamber includes heating elements which elevate the temperature of chemical samples placed within the chamber. Supplying and evacuating manifolds, each with a plurality of orifices for supplying and evacuating dry inert gas, provide a substantially laminar flow of dry inert gas just above the trays of chemical compounds which are to be dried. The laminar gas flow removes the unwanted vapor which tends to form above the tray of chemical compound, thus accelerating the drying process.

Abstract: An improved cool chamber is provided which includes a gas manifold for redistributing the gas flow and reducing the velocity of the gas particles that are directed towards a wafer. The gas manifold has a generally circular body that defines a plurality of outlets. A plurality of tubes, each having a first end and a second end, extend from the body. The first end is coupled to the body at the outlets. A vent diffuser is coupled to the second end of each tube. The vent diffuser includes a sintered gasket for providing point-of-use filtering of the gas and diffusion of the gas. The gas manifold is at a height different from the height of the plane of the wafer. An adapter plate that includes a bypass port is also provided. The bypass port is employed to conduct gas from the gas manifold back into the chamber during de-pressurization.

Abstract: In one embodiment, a cart (5) having a first vessel (10) which fits within a second vessel (90) is used to transport and store an integrated circuit substrate. The integrated circuit substrate is placed within the first vessel (10) and the door (18) of the first vessel (10) is closed and sealed against a door seal (24). The first vessel (10) is then purged with nitrogen to expel moisture and reactive gases from the interior of the first vessel (10). After purging, the first vessel (10) is then placed within the second vessel (90). The door (102) of the second vessel (90) is then closed and sealed against a door seal (104). The second vessel (90) is then purged with nitrogen to expel moisture and reactive gases from the interior of the second vessel (90). The cart (5) containing the integrated circuit substrate is then transported to the next manufacturing area. Integrated circuits and other articles may be manufacturing using the cart system of the present invention.

Abstract: A dryer for use with chemical compounds employs controlled vacuum, elevated temperature and dry, inert gas to dry the chemical compounds. The dryer includes a vacuum chamber into which trays containing the compounds are placed. The chamber includes heating elements which elevate the temperature of chemical samples placed within the chamber. Supplying and evacuating manifolds, each with a plurality of orifices for supplying and evacuating dry inert gas, provide a substantially laminar flow of dry inert gas just above the trays of chemical compounds which are to be dried. The laminar gas flow removes the unwanted vapor which tends to form above the tray of chemical compound, thus accelerating the drying process.

Abstract: Specifically configured dual rotor, multi-lobed, rotary gas compressors in a piping system will provide clean gas heating and re-circulation that will quickly and efficiently heat a connected process chamber or process piping section. Substantial heat is quickly generated through mechanical agitation of the gas molecules that pass through the inlet and outlet of a dual rotor, multi-lobed, rotary gas compressor. The invention application of a dual rotor, multi-lobed, rotary gas compressor as a means of imparting heat to a gas stream provides an economical source of convective heat for closed and open loop piping applications.

Abstract: Specifically configured dual rotor, multi-lobed, rotary gas compressors in a piping system will provide clean gas heating and re-circulation that will quickly and efficiently heat a connected process chamber or process piping section. Substantial heat is quickly generated through mechanical agitation of the gas molecules that pass through the inlet and outlet of a dual rotor, multi-lobed, rotary gas compressor. The invention application of a dual rotor, multi-lobed, rotary gas compressor as a means of imparting heat to a gas stream provides an economical source of convective heat for closed and open loop piping applications.

Abstract: The present invention provides a method and apparatus for separating volatile components from a base material. Specifically, the apparatus comprises a gas tight reactor, an induction heating vessel, a plate and evacuating means for evacuating volatile components from the reactor. The method comprises the steps of heating the material from which the volatile components are to be removed by induction heating in a gas tight vessel. More specifically, the area surrounding the object within the gas tight vessel is filled with metal filings which are then heated by induction heating. The metal filings thus inductively heat the object, causing any volatile components therein to be released. The volatile components are then evacuated from the gas tight vessel and the metal filings removed.

Abstract: A method for purging and passivating a vacuum chamber suitable for use in the production of integrated circuit structures on semiconductor wafers. The method includes flowing a heated, non-reactive gas, such as argon gas, through the chamber for purposes of decontaminating the chamber and subsequently filling the chamber with a selected gas such as nitrogen to passivate the chamber for storage or shipping purposes.

Abstract: A method is provided for the treatment of contaminated materials such as impounded sludges and contaminated soils by thermal desorption wherein a solid matrix is subjected to the action of superheated steam in a closed vessel, a gas stream comprising superheated steam is recirculated to the vessel and recirculation of the superheated steam is continued until organic constituents are separated therefrom to predetermined concentrations that are environmentally insignificant and within the limits prescribed by governmental regulations.

Abstract: Herein disclosed are a vacuum-degreasing cleaning method for degreasing a work by cleaning it with a solvent vapor under reduced pressure, and a vacuum-cleaning machine for practicing the method. This method comprises the vapor-cleaning step of cleaning the work under reduced pressure with a vapor of a petroleum solvent, and the drying step of drying the surface of the work under reduced pressure. This cleaning method can clean the work while preventing the deterioration of the working atmosphere and the air pollution and can reduce the initial cost and the running cost for the work cleaning operation. Moreover, the cleaning efficiency can be safely enhanced with neither any thermal influence upon nor any rust upon the work.

Abstract: A method for separating volatile components from a particulate base material by induction heating, which method comprises: heating a particulate base material in an induction heating vessel within a gas-tight reactor by induction heating; agitating said particulate base material by induction heated agitator means; introducing inert gas into said base material; and evacuating volatilized components from said particulate base material.A method for separating volatile components from a solid object by induction heating, which method comprises: positioning the solid object in an induction vessel of a gas-tight induction heating reactor, so that the object is surrounded by metal filings; heating said object surrounded by said metal filings by induction heating; injecting an inert gas into said metal filings; evacuating volatile components from within said reactor; and removing metal filings from the object.

Abstract: A method for purging a vacuum chamber suitable for use in the production of integrated circuit structures on semiconductor wafers. The method comprises providing the chamber to be purged and flowing a heated, non-reactive gas, such as argon gas, through the chamber. The non-reactive gas is heated to a temperature of at least 90.degree. C. Further, the chamber is heated to maintain it at a temperature of at least 90.degree. C. while flowing the gas therethrough. Flowing the heated non-reactive gas through the chamber causes released impurities or contaminants to be efficiently swept from the chamber in the non-reactive gas flow. After flowing the heated gas through the heated chamber, the flow of gas is interrupted and the chamber, while still hot, is pumped down to a vacuum of about 5.times.10.sup.-7 to determine whether or not the chamber has a leakage problem.

Abstract: An apparatus and method are described for delivering hygroscopic, corrosive chemicals such as hydrogen chloride from a source such as a tube trailer to a use point such as a semiconductor fabrication tool minimizing infiltration of moisture, and entrainment of particulates, while still reducing moisture contents below 100 parts per billion and achieving appropriate pressure drops without two phase flow.