Abstract: In a substrate processing apparatus (1), above a plurality of processing parts (31) arrayed in an up-and-down direction, arranged are a plurality of collecting pipes (61a to 61c). The plurality of collecting pipes (61a to 61c) correspond to a plurality of fluid classifications, respectively. Further, provided are a plurality of exhaust pipes (4) extending upward from the plurality of processing parts (31), into which exhaust gases from the processing parts (31) flow, respectively. At an upper end portion of each of the exhaust pipes (4), provided is a flow path switching part (5) which connects the upper end portion to the plurality of collecting pipes (61a to 61c) and switches a flow path of the exhaust gas flowing in the exhaust pipe (4) among the plurality of collecting pipes (61a to 61c). In the substrate processing apparatus (1), it is possible to reduce a pressure loss in the exhaust pipe (4) and reduce a footprint.

Abstract: A drier installation (1) for drying web (2), more particularly paper, which installation is provided for drying a maximum web width, the installation (1) comprises gas-heated radiant elements (3) for radiating the web, arranged according to at least one row (4) stretching out in the transversal (5) direction over the substantially entire maximum web width. The installation (1) comprises at least a transversal convective system (7, 36) equipped with suction and blowing devices (8) for sucking at least part of the combustion products produced by the radiant elements (3) by means of a suction duct (13) and for blowing this pa o the combustion products towards the web (2) by means of a blowing duct (14). Both suction (13) and blowing (14) ducts stretch out in the transversal (5) direction of the web (2).

Abstract: An apparatus for drying semiconductor wafers includes a bath for receiving semiconductor wafers and for holding a fluid, a chamber for providing an area where vapor is flowable over the bath, a supply pipeline for supplying vapor to the chamber, a vapor discharging pipeline for expunging vapor in the chamber, a fluid discharging pipeline for draining fluid in the chamber therefrom, and a protector for maintaining a distance between the semiconductor wafers during a drying process.

Abstract: A substrate drying system for drying substrates after the substrates are washed typically using deionized water, is disclosed. The substrate drying system comprises a substrate cleaning tank in which the substrates are washed. A dry pump is provided in fluid communication with the substrate cleaning tank. A container which contains a supply of a liquid drying fluid, typically isopropyl alcohol (IPA), is further provided in fluid communication with the substrate cleaning tank. In application, the dry pump induces a reduced pressure inside the substrate cleaning tank and the drying fluid container. This reduces the vapor pressure, and thus, the boiling point of the drying fluid, such that the drying fluid is vaporized and remains in a vaporized state throughout transit to the substrate cleaning tank and during drying of the substrate.

Abstract: The present invention provides method and apparatus for surface treatment which, when employed in process steps of manufacturing semiconductor devices, can result in the final products having enhanced reliability. According to the surface processing method, an obeject to be processed W is introduced in a processing vessel 10, which is then supplied with ClF3 gas serving as cleaning gas from a supply unit 26. The ClF3 gas is bound to the surface of the object to be processed W, and although the supply of the gas to the processing vessel is interrupted, the ClF3 gas bound to the surface of the object to be processed W serves to clean the surface of the object to be processed. Next, reducing gas is introduced into the processing vessel W to remove chlorine from the object to be processed W, the chlorine being derived from the ClF3 gas. After that, the introduction of the reducing gas is interrupted, and the cleaned object to be processed W is exported from the processing vessel 10.

Abstract: An apparatus for drying a semiconductor substrate includes a chamber having a processing bath and a cover, a liquid flow system for supplying a liquid flow into the processing bath so as to clean the substrate and for draining a liquid from the processing bath, a gas distributor for spraying a gas for drying the substrate, and decompression means for exhausting air in the chamber.

Abstract: A wafer dryer for use in a semiconductor cleaning apparatus includes an internal bath, an external bath, a solution supply line, a solution drain line, a pump, and drying means. The solution drain line has a first drain line and a second drain line. A pump for constantly maintaining a speed of a drained solution is installed on the first drain line. The drying means has an isopropyl alcohol (IPA) nozzle, a first gas spray nozzle for spraying N2 gas, and a second spray nozzle. The second spray nozzle is installed on all inner sidewalls of the external bath and has a plurality of holes. Thus, no wave is produced at a surface of the drained solution.

Abstract: A dryer lid for a substrate dryer such as a Marangoni-type substrate drying system. The dryer lid includes a lid panel which is mounted on a substrate cleaning tank and has a gasket slot that extends into the bottom surface of the lid panel, around the perimeter thereof. A sealing gasket is seated in the gasket slot. The gasket slot receives the upper edge of a lid frame, the bottom edge of which typically supports a gas shower panel fitted with multiple gas nozzles inside the substrate cleaning tank. Accordingly, the sealing gasket is interposed between the lid frame and the lid panel and seals the junction between those elements to prevent leakage of vaporized IPA and nitrogen drying gases from the cleaning tank during drying of substrates in the cleaning tank.

Abstract: An apparatus for drying semiconductor wafers includes a bath for receiving semiconductor wafers and for holding a fluid, a chamber for providing an area where vapor is flowable over the bath, a supply pipeline for supplying vapor to the chamber, a vapor discharging pipeline for expunging vapor in the chamber, a fluid discharging pipeline for draining fluid in the chamber therefrom, and a protector for maintaining a distance between the semiconductor wafers during a drying process.

Abstract: Liquid is removed from wafers for drying a wafer that has been wet in a liquid bath. The wafer and the bath are separated at a controlled rate as the wafer is positioned in a gas-filled volume. The controlled rate is generally not less than the maximum rate at which a meniscus will form between the liquid bath and the surface of the wafer when the liquid bath and the wafer are separated. The gas-filled volume is defined by a hot chamber that continuously transfers thermal energy to the wafer in the gas-filled volume. Hot gas directed into the volume and across the wafer and out of the volume continuously transfers thermal energy to the wafer.

Abstract: A wafer drying apparatus of increased efficiency in which isopropyl alcohol (IPA) supplied to a hood is activated by heat, thereby increasing its diffusion efficiency and enabling it to vaporize pure water on a wafer quickly, includes a washing tank for storing pure water, a hood positioned at an upper portion of the washing tank, an injection nozzle for ejecting IPA positioned in the hood, a storage tank for storing the IPA, a bubble maker in the storage tank to create IPA vapor, a nitrogen supplier for storing a carrier gas for transferring the IPA vapor in the storage tank to the hood, and a heater provided near the injection nozzle to heat the IPA vapor that is ejected through the injection nozzle to a predetermined temperature, thereby uniformly diffusing the IPA vapor.

Abstract: An apparatus for drying a semiconductor substrate includes a chamber having a processing bath and a cover, a liquid flow system for supplying a liquid flow into the processing bath so as to clean the substrate and for draining a liquid from the processing bath, a gas distributor for spraying a gas for drying the substrate, and decompression means for exhausting air in the chamber.

Abstract: A wafer dryer for use in a semiconductor cleaning apparatus includes an internal bath, an external bath, a solution supply line, a solution drain line, a pump, and drying means. The solution drain line has a first drain line and a second drain line. A pump for constantly maintaining a speed of a drained solution is installed on the first drain line. The drying means has an isopropyl alcohol (IPA) nozzle, a first gas spray nozzle for spraying N2 gas, and a second spray nozzle. The second spray nozzle is installed on all inner sidewalls of the external bath and has a plurality of holes. Thus, no wave is produced at a surface of the drained solution.

Abstract: A vapor collection method and apparatus capable of capturing vapor compositions without substantial dilution. The method and apparatus utilize a material that has a surface with an adjacent gas phase. A chamber is positioned in close proximity to a surface of the material. The position of the chamber creates a relatively small gap between the surface of the material and the chamber. The adjacent gas phase between the chamber and the surface define a region possessing an amount of mass. At least a portion of the mass is drawn through the region by induced flow. The utilization of a small gap limits the flow of mass that is external to the chamber from being swept through the chamber by induced flow.

Abstract: A substrate feed chamber that is equipped in a substrate processing apparatus is provided. The substrate feed chamber has a storage tray capable of storing simultaneously three or more substrate holding trays that hold substrates in a vertical or substantially vertical condition and a horizontal movement mechanism that moves horizontally the storage tray with respect to the substrate feed position in order to effect feeding-in or feeding-out movement of the substrate holding tray between any of the chambers of a group consisting of processing chambers and load lock chambers and, in addition, if required, has a rotary movement device that rotates the storage tray. Improvement in throughput in a substrate processing apparatus can thereby be achieved and increase in the ground-contacting area of the device as a whole can be prevented.

Abstract: A dryer for a material web having a surface to which ink is applied, including a housing subdivided into sections, through which a web travel plane extends wherein the material web is transportable, and a cooling and conditioning unit integrated in the housing, the cooling and conditioning unit having an inlet for admitting therethrough fresh air to the housing, includes at least one chill roll in the cooling and conditioning unit, over which the material web is guidable, the at least one chill roll being disposed and the fresh air being conductable through the cooling and conditioning unit in a manner for promoting post-evaporation of solvent inside the cooling and conditioning unit, and for preventing solvent vapors harmful to operating personnel from escaping to the outside from the housing; and a method of operating the dryer.

Abstract: A dryer for material webs for supplying heat to at least one side of a material web, the dryer having a dryer housing formed with an inlet opening and an outlet opening for material webs, and at least one ventilator and at least one heating device for producing heated gas, includes a burner unit shielded against the atmosphere in the dryer, and a supply system for supplying the burner unit with process gas formed of a large portion of exhaust gas of the dryer, the process gas being maintained for a dwell time and at a temperature level adequate for complete combustion of volatile solvents before it is supplied once again as heated gas to the interior of the dryer.

Abstract: Solvent based film is produced in an endless belt casting apparatus (10) in which, within initial compartments (46-52), flows of gas are directed through transversely elongated inlet channels (85.sub.i) to contact a layer (36') of polymer and solvent supported by an endless belt (26) and flows of gas and solvent vapors are withdrawn from the vicinity of the layer by transversely elongated gas plenums (68); within subsequent compartments (54-62), flows of gas are directed through elongated inlet plenums (74) to contact the layer and flows of gas and solvent vapors are withdrawn through transversely elongated exhaust channels (85.sub.o); within all compartments along upper and lower spans of the belt, flows of gas are directed at the inner side (30) of the belt from transversely elongated gas plenums (70) and flows of gas are withdrawn though outlets (72); and within initial compartments (46-52), flows of cooling gas are directed at the edges of the inner side of the belt from cooling nozzles (146, 148).

Abstract: The present invention provides an alternative filtering system for use with a photothermographic developing apparatus. The inventive filtering system is a three stage system which provides for condensation of fatty acids and removal of particulates prior to absorbing odor causing by-products of photothermographic development.