Abstract: The present invention provides a drying apparatus capable of satisfactorily drying a workpiece by using a dry vapor The drying apparatus has a control device for controlling a supply of a carrier gas and a supply of a dry vapor into a processing tank holding workpieces. A drying process carries out a carrier gas supply step of supplying the carrier gas and a mixed fluid supply step of supplying a mixed fluid prepared by mixing the carrier gas and the dry vapor alternately. A total mixed fluid supply time for which the mixed fluid supply step is executed is not shorter than 57% of a total processing time for which the carrier gas supply step and the mixed fluid supply step are executed.

Abstract: The present invention relates a granular material treatment unit, comprising: a support structure (S); a silo or hopper (2) delimiting a receiving cavity (3) for a granular material, which has an upper loading mouth (4), a lower unloading mouth (5) for the granular material; at least one feeding duct (6, 6a) for a treatment gas means leading to a lower area of said receiving cavity (3). The treatment unit also includes at least one heat-exchanging group (8) located on top of the receiving cavity (3) so that it is hit, in use, by the treatment gas means delivered by the at least one feeding duct (6, 6a) and rising along the receiving cavity (3).

Abstract: A reduced-pressure drying apparatus for drying a solvent in a liquid under a reduced pressure by evaporation of the solvent, includes a chamber including a first chamber and a second chamber, the first chamber accommodating work to which a liquid containing a film forming material is applied, the second chamber being coupled to the first chamber through a communicating part; a depressurizing unit depressurizing at least the second chamber; a communicating valve opening and closing the communicating part; and a control unit controlling a reduced pressure state at least of the second chamber by driving the depressurizing unit, the control unit also controlling an opening and closing state of the communicating part by driving the communicating valve.

Abstract: A reduced pressure drying apparatus includes a chamber that closes in an airtight manner during a reduced pressure drying operation, a stage on which a substrate is mounted; and an exhaust unit having an exhaust tube that opens at exhaust openings within the chamber. The stage is disposed within the chamber during the reduced pressure drying operation. The exhaust unit discharges atmosphere from the chamber via the exhaust openings during the reduced pressure drying operation to reduce the pressure within the chamber. The exhaust openings are formed such that a position of the exhaust openings is substantially the same as or no higher than a surface position of the substrate. The reduced pressure drying apparatus allows a film having a more uniform thickness to be formed on the substrate.

Abstract: A drier apparatus for removing water from various materials includes a drying chamber, a regenerator system, a drying fluid system, and a heating fluid recirculation system and a method for use of the apparatus. The material to be dried flows concurrently through the drier with a heating fluid that is segregated from the material but in heat transfer relationship with the material. A drying fluid flows countercurrent through the chamber so as to become heated and at least partially saturated from moisture released by the material. The drying fluid is then used to preheat recycled heating fluid which is further heated by a makeup heater. In some embodiments, the drying fluid is also recycled to the chamber after passing through a chiller.

Abstract: There are disclosed a heat pump device and a drying machine using the device in which abnormal water supplying into a water-cooling heat exchanger for use in water-cooling of a heat pump can be easily detected without disposing any water amount gauge particularly.

Abstract: The present invention is a substrate-placing mechanism to be provided in a processing container of a substrate-processing apparatus including: a stage having: a base body on which a substrate is placed, a heat-generating body for heating the substrate placed on the base body, and a feed terminal part for feeding electric power to the heat-generating body; a hollow supporting part fixed to a base of the processing container for supporting the stage; a connection terminal part fixed to the base of the processing container under the supporting part for being connected to an electric power source located outside the processing container; a feed member connected to the feed terminal part and extending in the hollow supporting part; and a spring member that connects the feed member and the connection terminal part.

Abstract: An edge wheel for supporting and rotating a disk-shaped substrate includes a wheel body having a peripheral groove configured to support an edge of a substrate and at least one radial channel extending into said wheel body from said peripheral groove. An edge wheel dryer and a method for processing a disk-shaped substrate are also described.

Abstract: An object is to provide a drying machine capable of effectively eliminating confinement of heat while a drying time of an object to be dried is reduced, and the drying machine includes a refrigerant circuit constituted by successively connecting a compressor, a radiator, a pressure reducing unit, an evaporator and the like in an annular form via a pipe; an air circulation path which allows an air sending unit to perform air circulation so as to send air from the radiator through the storage chamber to the evaporator and to again return the air to the radiator; and a heat exchange unit for performing heat exchange between an external heat medium and the air in the refrigerant circuit, the heat exchange being performed between a leeward side of the evaporator and a windward side of the radiator.

Abstract: An object is to provide a drying machine capable of effectively eliminating confinement of heat while a drying time of an object to be dried is reduced, and the drying machine includes a refrigerant circuit constituted by successively connecting a compressor, a radiator, a pressure reducing unit, an evaporator and the like in an annular form via a pipe; an air circulation path which allows an air sending unit to perform air circulation to send air from the radiator through the storage chamber to the evaporator and to again return the air to the radiator; and a heat exchange unit for performing heat exchange between an external heat medium and a refrigerant in the refrigerant circuit in a range of a refrigerant outlet side of the evaporator to a refrigerant discharge side of the compressor, the heat exchange unit being constituted of an external heat exchanger for performing heat exchange between the external heat medium and the refrigerant of an intermediate pressure section of a compressor.

Abstract: The downtime of a vacuum processing apparatus due to wet cleaning is reduced. In a vacuum processing apparatus that requires aging for its chamber or process container after vacuum evacuation of the apparatus and before actual processing of a workpiece, when the chamber has been opened to atmosphere for the purpose of wet cleaning or component replacement, the apparatus comprises a high precision absolute pressure gauge for use in processing, a wide range gauge capable of measuring a wide range of pressures, and a controller, wherein the controller uses a pressure trend during vacuum evacuation to determine whether the vacuum evacuation is satisfactory, and starts aging upon determining that the vacuum evacuation is satisfactory even if the actual pressure is not below a prescribed value.

Abstract: A method for cleaning and drying semiconductor wafers improves device yield by providing more advanced control of the ratio of drying fluid to cleaning fluid, for example the ratio of N2 vapor to IPA vapor. In addition, a quick drain process is employed to improve process throughput, and to further improve particle and watermark removal during the cleaning and drying steps.

Abstract: A wafer dryer and method featuring a nebulizer which emits a pressurized drying liquid stream that converges with an opposed pressurized non-reactive carrier gas stream to produce a drying liquid fog. The pressurized non-reactive gas spray device is disposed partially within a tub and partially within a wafer bath vessel housing a wafer to be dried. The tub has a vent port for allowing the drying liquid fog to pass into the wafer bath vessel to adhere to exposed wafer surfaces and displace remaining liquid on wafer surfaces, thus drying the wafer. The tub may further include a drain for draining drying liquid not converted into the fog or which has condensed. The vent also may include means for retaining larger drying liquid fog particles which allows smaller drying liquid fog particles to pass into the wafer bath vessel.

Abstract: A method of forming a dynamic liquid meniscus includes forming a meniscus at a first size, the meniscus being formed between a proximity head and a first surface and changing the meniscus to a second size by modulating a flow through at least one of a set of ports on the proximity head. A system for modulating flow through the ports in a proximity head is also described.

Abstract: A method and apparatus for cleaning, rinsing and drying a reticle used in semiconductor device manufacturing, tilts the reticle during the drying process to prevent water from the rinsing process from collecting and remaining on the reticle. The rectangularly shaped reticle is held in a carrier and the top and bottom edges of the reticle may form an angle of at least about 8° with the horizontal to maximize drying efficiency, when the carrier is placed on a horizontal surface or suspended from above.

Abstract: A module for transferring a substrate includes a load port for supporting a container to receive a plurality of substrates, a substrate transfer chamber disposed between the load port and a substrate process module, a substrate transfer robot disposed in the substrate transfer chamber for transferring the substrates between the container and the substrate process module, a gas supply unit connected to the substrate transfer chamber for supplying a purge gas into the substrate transfer chamber to purge an interior of the substrate transfer chamber, and a contamination control unit connected to the substrate transfer chamber for circulating the purge gas supplied into the substrate transfer chamber, resupplying the circulated purge gas into the substrate transfer chamber and removing particles and airborne molecular contaminants from the purge gas being circulated. Contamination of a substrate may be prevented and a necessary amount of purge gas may be reduced.

Abstract: The invention relates to a method for treating products with air in order to enable the conservation, storage and use thereof. Said invention also relates to a device for treating such products and the products obtained using said treatment method. The products (P) to be treated, such as a hay drier or other similar agricultural products, are loaded into a closed space (20) that is connected to a thermodynamic machine (21) which is controlled using a programmable automaton (22) and which is powered by an electrical cabinet (25). Three mass of water in air sensors (Q1, Q2 and Q3) determine the operation of the machine according to the desired treatment objectives both in terms of moisture in relation to the product treated and power consumption. The invention is suitable for treating diverse products such as agricultural products.

Abstract: Disclosed is a high-speed drying apparatus for drying objects which are rinsed with non-volatile or volatile liquid. The drying apparatus is capable of quickly drying such objects at a reduced cost, not permitting their oxidation. First, the rinsing liquid remaining on objects is substantially removed, still allowing small quantities of rinse to remain thereon. The substantial removal step is immediately followed by the complete removal of the still remaining liquid in the super dry atmosphere.

Abstract: A method and apparatus for performing a semiconductor process wafer drying process, the method provides a semiconductor wafer having a process surface disposed in an enclosed drying space following exposure of the process surface to water; supplying a solvent vapor to the drying space at a predetermined concentration from a solvent vapor source and at least one solvent vapor supply line; determining at least one of a solvent vapor concentration and a solvent vapor temperature in the drying space; and heating in response to the determined solvent concentration at least one of at least a portion of one of the solvent vapor source, the at least one solvent vapor supply line, and at the drying space to alter the solvent vapor concentration in the drying space.

Abstract: A system, method, and apparatus for supplying a gas-liquid vapor to a process tank for performing semiconductor manufacturing. In one aspect, the invention is a method of supplying a gas-liquid vapor to a process tank comprising: supplying a gas stream through at least one hydrophobic tube; exposing the outside surface of the hydrophobic tube to a liquid so that a vapor of the liquid permeates the hydrophobic tube and enters the gas stream, forming a gas-liquid vapor inside the tube; and transporting the gas-liquid vapor to the process tank. In another aspect, the invention is an apparatus for supplying a gas-liquid vapor to a process tank comprising: at least one hydrophobic tube adapted to carry a gas; and a housing forming a chamber that surrounds the tube, the chamber adapted to receive a liquid that can permeate the tube, forming a gas-liquid vapor.

Abstract: A method for drying an object, having a polymeric film, wherein the object is submerged in a rinse liquid. The object is removed from the rinse liquid and the object is placed in a solvent bath before a sufficient amount of the rinse liquid can evaporate from the object. The density of a solvent in the solvent bath depends on a direction of orientation of the polymeric film with respect to a force. The object is removed from the solvent bath. A drying process is performed.

Abstract: A substrate drying system for drying substrates after the substrates are washed typically using deionized water, is disclosed. The substrate drying system comprises a substrate cleaning tank in which the substrates are washed. A dry pump is provided in fluid communication with the substrate cleaning tank. A container which contains a supply of a liquid drying fluid, typically isopropyl alcohol (IPA), is further provided in fluid communication with the substrate cleaning tank. In application, the dry pump induces a reduced pressure inside the substrate cleaning tank and the drying fluid container. This reduces the vapor pressure, and thus, the boiling point of the drying fluid, such that the drying fluid is vaporized and remains in a vaporized state throughout transit to the substrate cleaning tank and during drying of the substrate.

Abstract: A substrate holder has a disk-like body with a central recess having diameter smaller than the diameter of the substrate placed onto the upper surface of the holder. The substrate can be clamped in place by the clamps of the edge-grip mechanism or placed into a seat without the use of clamps. In both cases, the substrate forms a partial wall that confines the heating/cooling recess or chamber. The aforementioned recess is filled with a cooling or heating liquid (depending on the mode of metal deposition) selectively supplied from a liquid heating or cooling system. In order to ensure in the working chamber above the substrate a pressure slightly higher than the pressure in the cooling/heating recess, the working chamber is first filled with the working solution under the atmospheric pressure, and then the recess is filled with a heating or cooling liquid with simultaneous increase of pressure in the working chamber to a level slightly exceeding the pressure in the recess.

Abstract: An apparatus for drying a substrate using an isopropyl alcohol vapor includes a container for receiving an isopropyl alcohol vapor to dry a plurality of substrates wherein an opening is vertically formed through an upper portion of the container to permit the loading and unloading of the substrates; a supporting member for supporting the plurality of substrates in the container in a vertical direction and for supporting the substrates side by side in a horizontal direction, wherein the supporting member extends through the container and through the opening; and a cover for obstructing a flow of clean air from flowing directly from an air cleaner disposed over the container into the container through the opening. In addition, the apparatus may include an inert gas supplying member to supply an inert gas onto the substrates to prevent native oxide films from forming on the substrates.

Abstract: A condenser of a condensing-type clothes dryer includes a plurality of condensing ducts provided in a middle portion of a circulation duct, the condensing ducts condensing air being circulated there-through after being discharged from a drum; and a plurality of cooling fins provided to be in contact with an outer surface of the condensing ducts, wherein an interval or a pitch of the cooling fins is different partially according to a flow rate of air blown from a cooling fan for a heat-exchange with air flowing through the condensing duct. At this time, the pitch or interval of the cooling fins is narrow at a portion where air blown from the cooling fan flows fast, and the pitch or internal of the cooling fins is wide at a portion where air blown from the cooling fan flows slowly.

Abstract: A dryer for drying a substrate includes: a bath containing a fluid; a chamber; and a delivery system supplying a polar organic compound, such as isopropyl alcohol, and a hydrophobic organic compound, such as hydrofluoroether, to the interface between the substrate and the fluid as the substrate is removed from the fluid of the bath into the chamber. The dryer further includes a chamber environment control system that supplies a gas into the chamber to dry the substrate and controls temperature and humidity in the chamber and a chamber heater attached to the chamber to transfer thermal energy into the chamber. A drying method includes: immersing a substrate into a fluid contained in a bath; removing the substrate from the fluid into a chamber; and supplying isopropyl alcohol and hydrofluoroether to an interface between the substrate and the fluid.

Abstract: A dryer lid for a substrate dryer such as a Marangoni-type substrate drying system. The dryer lid includes a lid panel which is mounted on a substrate cleaning tank and has a gasket slot that extends into the bottom surface of the lid panel, around the perimeter thereof. A sealing gasket is seated in the gasket slot. The gasket slot receives the upper edge of a lid frame, the bottom edge of which typically supports a gas shower panel fitted with multiple gas nozzles inside the substrate cleaning tank. Accordingly, the sealing gasket is interposed between the lid frame and the lid panel and seals the junction between those elements to prevent leakage of vaporized IPA and nitrogen drying gases from the cleaning tank during drying of substrates in the cleaning tank.

Abstract: A semiconductor wafer drying apparatus is provided. In one embodiment, this apparatus includes a bath which can contain much deionized water so that semiconductor wafers soak in the deionized water; a chamber providing a space where vapor flows over the bath; a vapor supply line supplying vapor to the internal space of the chamber; an exhaust line discharging vapor contained in the chamber; a deionized water exhaust line discharging deionized water in the bath; a semiconductor wafer holder supporting the semiconductor wafer in the bath; and pitch guides placed at left and right sides of the semiconductor wafer, movable to a first position and a second position in a vertical direction, wherein the pitch guides are separated from the semiconductor wafer at the first position and contact the semiconductor wafer at the second position thus preventing the movement of the semiconductor wafer.

Abstract: In an apparatus 4 for drying crockery in a washing chamber 2 of a dishwashing machine hot moist washing chamber air is produced, from which moisture is removed by condensation outside the washing chamber 2. In order to keep the amount of water required for condensation small and to keep it in readiness for the next washing operation a heat exchanger 5 is provided outside the washing chamber 2, the heat exchanger surface 6 of the heat exchanger 5 separating a water guide chamber 7 and an air guide chamber 8. The heat exchanger surface 6 is arranged in such a way that condensate runs down under the effect of the force of gravity into an intermediate storage means 9 to which the water guide chamber 7 is connected and which is communicated with the washing chamber 2 by way of a valve 13.

Abstract: In a first aspect, a module is provided that is adapted to process a wafer. The module includes a processing portion having one or more features such as (1) a rotatable wafer support for rotating an input wafer from a first orientation wherein the wafer is in line with a load port to a second orientation wherein the wafer is in line with an unload port; (2) a catcher adapted to contact and travel passively with a wafer as it is unloaded from the processing portion; (3) an enclosed output portion adapted to create a laminar air flow from one side thereof to the other; (4) an output portion having a plurality of wafer receivers; (5) submerged fluid nozzles; and/or (6) drying gas flow deflectors, etc. Other aspects include methods of wafer processing.

Abstract: A method and an appliance are disclosed for the non-thermal drying of articles, in particular motor vehicle bodies, freshly painted with a water-based paint. The articles to be dried are subjected to dry air by forced convection in a drying tunnel and the moisture-laden air is dried in an air drying device by condensation to a specific target value of absolute residual moisture. So that fluctuations in the incidence of moisture can be leveled out with a low degree of inertia, with the high condensation performance remaining unchanged, only a fraction of the circulated air which is adapted in size, as required, is dried in the air drying device to a residual moisture markedly below the circulating-air target moisture, and the remaining untreated part of the circulated air is led back into the drier housing after being intermixed with the dried part-air stream.

Abstract: The present invention relates to the in situ manufacture of plant extracts from living plants. Since the plant remains intact, a flower or other component of the plant can be extracted one or more times. Following the extraction process, the plant is typically able to continue with its lifecycle. Such extracts have a variety of uses including use for, but not limited to: herbal and homeopathic medicines, hair and skin treatments, and cosmetics. The present invention also relates to apparatus useful for manufacturing plant extracts from living plants.

Abstract: Apparatus (10) for drying particles derived from wood such as sawdust, wafers, flakes, paper sludge, and strands. The wood particles are introduced into a first drying stage (12) and conveyed through a dryer (16) in which the wood particles are heated to an elevated temperature (900 F.) to drive off moisture and VOC's from the particles. The wood particles are then delivered to a second drying stage (14) through which they are also conveyed. The particles are now heated to a second elevated temperature (600 F.) to substantially eliminate any moisture in the particles so the particles can now be used to make wood products. A heating system includes a combustion chamber (22) to combust fuel to commonly heat the wood particles in both drying stages.

Abstract: Apparatus (10) for drying particles derived from wood such as sawdust, wafers, flakes, paper sludge, and strands. The wood particles are introduced into a first drying stage (12) and conveyed through a dryer (16) in which the wood particles are heated to an elevated temperature (900 F.) to drive off moisture and VOC's from the particles. The wood particles are then delivered to a second drying stage (14) through which they are also conveyed. The particles are now heated to a second elevated temperature (600 F.) to substantially eliminate any moisture in the particles so the particles can now be used to make wood products. A heating system includes a combustion chamber (22) to combust fuel to commonly heat the wood particles in both drying stages.

Abstract: A system for drying wood particles and a method of operation wherein the wood particles are introduced into a dryer and contacted directly with a combustion system exhaust stream. VOC's emitted from the wood particles during drying are recycled to the combustion system for destruction. In one method according to the invention, a portion of the VOC-laden dryer exhaust stream is recycled to the dryer.

Abstract: A kiln system includes a kiln chamber defining a chamber interior space, a furnace capable of providing heated air, one or more air moving devices capable of circulating air in the chamber interior space along a recirculating flow path, and a plenum positioned in the kiln chamber and generally separating the chamber interior space into an upper portion and a lower portion. The upper portion of the chamber interior space that is positioned above the plenum, and the lower portion of the chamber interior space is positioned below the plenum and is capable of receiving the charge of lumber for drying. The plenum defines a plenum cavity that is in communication with and capable of receiving the heated air from the furnace. The kiln system further includes one or more upright passageways. Each upright passageway is mounted to the plenum and in communication with the plenum cavity so that the upright passageway is capable of receiving heated air from the plenum cavity.

Abstract: There is provided a semiconductor device manufacturing system capable of carrying out resist stripping or surface pre-treatment of a substrate by use of a gas such as chlorosulfuric acid with high reactivity The manufacturing system comprises a process vessel 101 formed integrally of a process chamber 1 for treating respective surfaces of substrates 202 with a chemical vapor and a chemical storage chamber 2 for storing chemical for generating the chemical vapor, and a chemical heating means 5 for heating the chemicals stored in the chemical storage chamber 2 to evaporation.

Abstract: A method for rinsing and drying semiconductor wafers. The method includes placing a semiconductor wafer into a chamber of a rinse/dry apparatus, directing rinse liquid over the semiconductor wafer, and moving a portion of the chamber, such as a portion of a wall of the chamber, substantially vertically relative to the remainder of the chamber to remove rinse liquid therefrom. The method may also include directing a drying fluid onto a surface of the rinse liquid to facilitate drying of the rinsed semiconductor wafers as rinse liquid is being removed from the chamber.

Abstract: An alcohol vapor dryer system includes a vapor generating chamber, a heater, a process chamber, a gas supplier, a drain vessel, and a suction device. The vapor generating chamber of cylindrical shape contains liquid alcohol supplied from an outer source and includes a fan installed above the surface of the liquid alcohol. The heater installed below the vapor generating chamber heats the liquid alcohol contained in the vapor generating chamber at a temperature lower than the boiling point of the liquid alcohol. The process chamber communicates with the vapor generating chamber through a plurality of fluid ducts and includes a body and a cover plate for covering the body. The gas supplier generates heated nitrogen gas and supplies the gas in order to transfer the heated nitrogen gas and the alcohol vapors to the fluid ducts which are connected to the process chamber. The drain vessel communicates with the bottom of the body of the process chamber and also with the bottom of the vapor generating chamber.

Abstract: An apparatus and method for drying semiconductor substrates to dry about 50 semiconductor wafers by evaporating an organic solvent and blowing the evaporated organic solvent onto these semiconductor wafers through a nozzle, comprises the evaporate organic solvent being blown onto the semiconductor wafers from a direction aslant by an angle from 20.degree. to 50.degree. from a vertical direction toward the semiconductor wafers. At this time, the initial spray amount of the evaporated organic solvent is not less than 0.8 cc/second and not more than 1.5 cc/second, additionally, the amount of the organic solvent used for drying is not less than 70 cc/batch and not more than 200 cc/batch.

Abstract: A drying processing apparatus for supplying a dry gas to a processing chamber 35, which houses therein semiconductor wafers W, to dry the semiconductor wafers W, including a heater 32 for heating N.sub.2 gas serving as a carrier gas; a vapor generator 34 for making IPA misty by using the N.sub.2 gas heated by the heater 32 and for heating the IPA to produce the dry gas; and a flow control element 36 for supplying a predetermined rate of N.sub.2 gas to the processing chamber 35. Thus, it is possible to improve the efficiency of heat transfer of N.sub.2 gas, and it is possible to increase the amount of produced IPA gas and decrease the time to produce IPA gas. In addition, it is possible to prevent the turbulence of atmosphere in the processing chamber 35 after the drying processing is completed.

Abstract: A vacuum dryer and a method of drying a semiconductor device using the same are provided. In the present invention, a vacuum dryer using isopropyl alcohol vapor, including an outer bath, an inner bath, a main water supply line, a supplementary water supply line, an inner bath drain line, and an outer bath drain line, is provided. After cleaning the inside of the vacuum dryer, the inner bath is filled with the supplied deionized water and the deionized water is continuously overflowed. Then, the semiconductor substrate is loaded into the inner bath of the vacuum dryer to which the deionized is continuously overflowed. The loaded semiconductor substrate is dried by supplying the isopropyl alcohol vapor to the inner bath into which the semiconductor substrate is loaded.

Abstract: A method for thermocapillary drying of substrates includes the step of elevating a submerged substrate away from a rinsing liquid. Such movement of the substrate forms a meniscus on opposite sides of the substrate. The curved raised portion of the meniscus at each side of the substrate is gently heated in such a way as to induce thermocapillary flows, which cause the rinsing fluid to flow away from the substrate so that the withdrawing substrate may be pulled out dry and clean. Heating may be accomplished by directing a warm gas onto the meniscus or by heating the meniscus with rays from a radiation/light source. Apparatus is also provided for performing the various method steps.

Abstract: A drying apparatus and method of drying is provided for drying a semiconductor member mounted in a carrier that is placed in a processing tank through contact with isopropyl alcohol. An isopropyl alcohol liquid is vaporized in a bottom portion of the processing tank, and the resulting vapor is condensed in its top portion. A heater is disposed so as to heat the inside of the processing tank to keep the inside at a predetermined temperature range in a middle-layer portion, i.e., a drying portion, of the processing tank. The heater is covered with a heat insulating member.

Abstract: An apparatus for rinsing and drying semiconductor wafers. The apparatus includes side walls, end walls and a base. One embodiment of the apparatus includes a rigid side and end walls. In another embodiment of the apparatus, at least a portion of the side wall is collapsible. In yet another embodiment of the apparatus, at least a portion of the wall has a tambour configuration, facilitating bending or rolling of the wall beneath the base. The apparatus includes an assembly for injecting a rinse liquid into the chamber. The side walls, end walls, and base form a chamber configured to receive at least one semiconductor wafer. Rinse liquid can be directed into the chamber, over each semiconductor wafer therein to rinse each semiconductor wafer. At least a portion of a side wall can be lowered substantially vertically to permit rinse liquid to flow out of the chamber. The apparatus also includes an assembly for injecting a drying fluid into the chamber.

Abstract: A dehydration apparatus and process utilizing a closed system are provided and enable substantial dehydration of biological products while enabling retention of the essential flavor and fragrance of the natural product. The apparatus comprises a heat exchanger and dehydration chamber connected in closed fashion by appropriate conduits or ducting. Appropriate blowers are provided, as are controls for the system parameters of the dehydration process.

Abstract: An apparatus and method for drying a microelectronic structure on wafer substrate using supercritical phase gas techniques and a unique pressure vessel locking mechanism. There is lid and a base with an open cavity to contain at least one microelectronic structure on wafer substrate. Clamping the lid to the base uses locking clamp rings with open jaws large to partially enclose the edge of the vessel. The clamp rings are supported symmetrically about the sides of the vessel. The rings are adjusted between an open position where the rings are clear of the vessel and a locking position where the jaws partially enclose the vessel. The jaws and the vessel share a tapered cam plate and roller system configured to bring the rings into vertically compressive locking engagement on the pressure vessel when the rings are moved into locking position. Mechanical interlocks provide security against back pressure opening the rings.

Abstract: A method and an apparatus for drying a semiconductor wafer. The semiconductor wafer is first dipped in a liquid with a volatility higher than water and which is miscible with water. The dipped semiconductor wafer is then delivered in an IPA dryer to carry out the drying process. The drying process includes evaporating isopropyl alcohol to obtain a vapor and condensing the IPA vapor on the surface of the semiconductor wafer. The IPA is heated and vaporized by a hot plate disposed at the bottom of the IPA dryer. The condenser is mounted on the inner peripheral surface of the IPA dryer and surrounds the semiconductor wafer, which is supported by a holder.

Abstract: When an IPA is fed to a nozzle, a flow of the IPA passing through holes is generated. The flow becomes film-shaped and goes downward along an inner surface of a side wall of a processing vessel. Then, the flow is collected by a liquid receiving section formed in a lower portion of the processing vessel and discharged to an outside. The inner surface of the side wall of the processing vessel is covered with the flow of the IPA. Therefore, an IPA vapor can be prevented from condensing uselessly on the inner surface. As a result, the IPA vapor is effectively utilized for condensation on a surface of the object to be processed which is mounted on a pan. Thus, the defective dryness of the object can be prevented.

Abstract: In a vapor drying system, solvents such as isopropyl alcohol (IPA) are boiled and condensed to provide a means of removing water and other contamination from process parts loaded into the equipment. The parts enter the apparatus via an automated lift assembly. Upon entering the vapor zone, solvent condenses on the parts and fixtures due to a temperature differential, displacing the contaminants. This condensate/contaminant waste stream gravity drains to a buffer tank below via a sloped, temperature-controlled drip tray. After vapor condensation on the parts ceases, drying is accomplished using superheated vapors formed in a stabilized zone generated by one or more offset boil sumps and separate vapor heat exchangers. Any liquid solvent remaining on the parts is flash-dried in the vapor zone, so that parts emerge clean and dry. The invention incorporates a computer-implemented PLC to control process parameters, cover mechanism, transport mechanism, safety features during operating, idle and standby conditions.