Abstract: To improve accuracy of distance measurement using a Z pixel having the same size as size of a visible light pixel. In a solid-state imaging apparatus, a visible light converting block includes a plurality of visible light converting units in which light receiving faces for receiving visible light are disposed and configured to generate electric charges in accordance with a light receiving amount of the received visible light, and a visible light electric charge holding unit configured to exclusively hold the electric charges respectively generated by the plurality of visible light converting units in periods different from each other.

Abstract: Provided is an image sensor and an operation method of the image sensor. The image sensor includes a pixel array including a plurality of white pixels, a plurality of color pixels, and a plurality of auto focus (AF) pixels, a first shared pixel including the plurality of white pixels and the plurality of color pixels includes a first conversion gain transistor and a second conversion gain transistor configured to control a conversion gain of the first shared pixel, and a second shared pixel including some of the plurality of white pixels and the plurality of color pixels and at least one AF pixel includes a third conversion gain transistor and a fourth conversion gain transistor configured to control a conversion gain of the second shared pixel. The first conversion gain transistor, the second conversion gain transistor, the third conversion gain transistor, and the fourth conversion gain transistor are connected to different conversion gain control lines, respectively.

Abstract: A camera module test apparatus having improved performance include a coefficient data extractor that accommodates a camera module; and a test apparatus that accommodates the camera module and tests the camera module. The coefficient data extractor includes a coefficient generator that receives an image signal output from the camera module, and generates coefficient data of a ratio of a first color image signal and a second color image signal included in the image signal; and a memory device that stores the generated coefficient data. The test apparatus includes an image generator that receives an image signal from the camera module and coefficient data from the memory device, and generates a converted pattern image signal based on the image signal and the coefficient data; and a calibration data generator that generates calibration data of the converted pattern image signal.

Abstract: Systems and methods for a multi-primary color system for display. A multi-primary color system increases the number of primary colors available in a color system and color system equipment. Increasing the number of primary colors reduces metameric errors from viewer to viewer. One embodiment of the multi-primary color system includes Red, Green, Blue, Cyan, Yellow, and Magenta primaries. The systems of the present invention maintain compatibility with existing color systems and equipment and provide systems for backwards compatibility with older color systems.

Abstract: An optical sensor device, includes an optical sensor that has a set of sensor elements, an optical filter that includes a plurality of regions, and one or more processors. A region, of the plurality of regions, includes a first set of optical channels comprising optical channels that are configured to pass light associated with respective subranges of a first wavelength range, a second set of optical channels comprising optical channels that are configured to pass light associated with respective subranges of a second wavelength range, and a third set of optical channels comprising optical channels that are configured to pass light associated with respective subranges of a third wavelength range. The one or more processors are configured to obtain, from the optical sensor, sensor data associated with a scene and determine image information associated with the scene based on the spectral information.

Abstract: An image sensor includes a Bayer pattern-type pixel array including a plurality of Bayer pattern-type extended blocks each having first to fourth pixel blocks, each of the first to fourth pixel blocks including first to fourth pixels, the first and fourth pixels of the first and fourth pixel blocks being configured to sense green light, the first and fourth pixels of the second and third pixel blocks being configured to sense red light and blue light, respectively, and the second and third pixels of the first to fourth pixel blocks being configured to sense white light, and a signal processing unit merging Bayer pattern color information generated from the first and fourth pixels of the first to fourth pixel blocks, and the Bayer pattern illuminance information generated from the second and third pixels of the first to fourth pixel blocks.

Abstract: An image sensor and a method of fabricating the image sensor, the image sensor including a semiconductor substrate having a first floating diffusion region, a molding pattern over the first floating diffusion region and including an opening, a first photoelectric conversion part at a surface of the semiconductor substrate, and a first transfer transistor connecting the first photoelectric conversion part to the first floating diffusion region. The first transfer transistor includes a channel pattern in the opening and a first transfer gate electrode. The channel pattern includes an oxide semiconductor. The channel pattern also includes a sidewall portion that covers a side surface of the opening, and a center portion that extends from the sidewall portion to a region over the first transfer gate electrode.

Abstract: There is provided an image sensor including a pixel unit, the pixel unit including a photodiode, a first color filter and a second color filter each disposed in a different position on a plane above the photodiode, and a first on-chip lens disposed over the first color filter and a second on-chip lens disposed over the second color filter.

Abstract: An input signal for each of three primary color components is converted into a luminance signal and a color signal by a color space conversion part. A gain setting part sets a gain for the color signal obtained by color space conversion according to a signal level of a setting reference signal generated on the basis of the input signal, for example, the luminance signal. A gain adjustment part performs gain adjustment of the color signal with the gain set by the gain setting part, and in a case where the luminance signal is larger than a threshold set according to a dynamic range for each color component, the gain adjustment part makes the subject achromatic so that, even in a case where a light amount of the subject is high, influence of a difference in the dynamic range is little.

Abstract: A photoelectric conversion device includes: a pixel region in which pixels each including a photoelectric converter is arranged, and micro-lenses corresponding to the pixels. The pixel region includes adjacent first and second regions, a first pixel in the first region and a second pixel in the second region adjacent in a direction in which the first and second regions are aligned are arranged at a first arrangement pitch, two pixels in the first region adjacent in the direction are arranged at a second arrangement pitch, two pixels in the second region adjacent in the direction are arranged at a third arrangement pitch, the second and third arrangement pitches are smaller than the first arrangement pitch, and an arrangement pitch of two micro-lenses corresponding to the pixel in the first regions and the pixel in the second region that are adjacent is smaller than the first arrangement pitch.

Abstract: A linear matrix circuit generates a second R signal, a second G signal, and a second B signal by performing a matrix operation of a correction coefficient of 3 rows×3 columns including first to third correction coefficients, fourth to sixth correction coefficients, and seventh to ninth correction coefficients on a first R signal, a first G signal, and a first B signal. An R coefficient corrector performs correction so that the first correction coefficient to be multiplied by the first R signal is caused to be close to 1 and the second and third correction coefficients to be respectively multiplied by the first G signal and the first B signal are caused to be close to 0, as a first difference value obtained by subtracting the first G signal from the first B signal increases when the first difference value exceeds a first threshold.

Abstract: An image processing apparatus comprising, a specifying unit configured to specify, in a visible light image, a region having color information similar to first color information at a position where the visible light image is designated, an extraction unit configured to extract second color information from the specified region in the visible light image, and, a composition unit configured to generate a composite image by superimposing the second color information on the specified region in an invisible light image synchronously captured by an optical system common to the visible light image.

Abstract: Aspects of the present disclosure relate to quad color filter array image sensors. A quad color filter array (CFA) image sensor is configured to capture image data. The quad CFA image sensor includes a quad CFA and an image sensor coupled to the quad CFA. The image sensor includes a plurality of quads including a plurality of pixels. For each quad, each pixel of the plurality of pixels is coupled to a same color filter of the plurality of color filters, a first pixel of the plurality of pixels is associated with a first exposure region of the quad and corresponds to a first aperture size, a second pixel of the plurality of pixels is associated with a second exposure region of the quad and corresponds to a second aperture size, and at least two pixels of the plurality of pixels are configured as phase detection pixels.

Abstract: An imaging device including a pixel matrix and a processor is provided. The pixel matrix includes a plurality of phase detection pixels and a plurality of regular pixels. The processor performs autofocusing according to pixel data of the phase detection pixels, and determines an operating resolution of the regular pixels according to autofocused pixel data of the phase detection pixels, wherein the phase detection pixels are always-on pixels and the regular pixels are selectively turned on after the autofocusing is accomplished.

Abstract: Photodetection elements within an integrated-circuit pixel array are dynamically configurable to any of at least three uniform-aspect-ratio, size-scaled pixel footprints through read-out-time control of in-pixel transfer gates associated with respective photodetection elements and binning transistors coupled between the transfer gates for respective clusters of the photodetection elements and a shared reset node.

Abstract: There is provided a solid-state imaging device including: one or more photoelectric conversion elements provided on side of a first surface of a semiconductor substrate; a through electrode coupled to the one or more photoelectric conversion elements, and provided between the first surface and a second surface of the semiconductor substrate; and an amplifier transistor and a floating diffusion provided on the second surface of the semiconductor substrate, in which the one or more photoelectric conversion elements are coupled to a gate of the amplifier transistor and the floating diffusion via the through electrode.

Abstract: Accuracy in obtaining polarization information can be improved in a solid-state imaging device including a polarization pixel. There is provided a solid-state imaging device including a plurality of polarization pixels that obtains a polarization signal of incident light, a semiconductor substrate on which the plurality of polarization pixels is arranged, and a circuit layer provided on a surface facing a surface of the semiconductor substrate on which the incident light is made incident, the circuit layer including a polarization pixel circuit that performs signal processing on the polarization signal obtained by the polarization pixels, in which a blank area that separates the plurality of polarization pixels from each other is provided over the entire circumference of the plurality of polarization pixels.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a first interconnect wire disposed within a dielectric structure on a substrate. A bond pad has a lower surface contacting the first interconnect wire. A via layer is vertically between the first interconnect wire and a second interconnect wire within the dielectric structure. The via layer includes a plurality of support vias having a first size and a plurality of additional vias having a second size that is smaller than the first size. The plurality of support vias extend from directly under the lower surface of the bond pad to laterally past outermost edges of the lower surface of the bond pad.

Abstract: An image sensor, an image signal processor, and an image processing system including the same are disclosed. The image sensor includes an active pixel sensor (APS) block provided with a (3×3) matrix in which three red color pixels, three blue color pixels, and three white color pixels are contained, and a data generation block configured to generate pixel data of each of the red color pixels, pixel data of each of the blue color pixels, and pixel data of each of the white color pixels.

Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus that realize a high frame rate image capture without deteriorating an image quality. A floating diffusion holds a charge accumulated on one or more photoelectric conversion units. A plurality of amplification transistors read out a signal corresponding to the charge held by the floating diffusion. The signal read out by the amplification transistor is output to a vertical signal line. The plurality of amplification transistors are connected in parallel. The present technology is applicable to a CMOS image sensor, for example.

Abstract: An image sensor includes a first organic photoelectric conversion layer on a base layer, a floating diffusion region in the base layer, a first storage node including a first electrode layer, which is configured to receive a bias signal, a first portion of a first semiconductor layer which includes a semiconductor material, and a first portion of a first dielectric layer. The first dielectric layer extends between the first electrode layer and the first semiconductor layer. The first storage node is electrically connected to the first organic photoelectric conversion layer. The image sensor includes a first transfer transistor including the first dielectric layer, the first semiconductor layer, and a first transfer gate electrode which is configured to receive first transfer control signal. The first transfer transistor has a first end electrically connected to the first storage node and a second end electrically connected to the floating diffusion region.

Abstract: An imaging apparatus includes an image sensor configured to output a pair of image signals based on a pair of light fluxes that have passed different exit pupil regions in an imaging optical system that includes a focus lens, a calculator configured to calculate a plurality of focus evaluation values each having a different setting condition, based on the pair of image signals in a focus detection area in an image captured by the image sensor, a detector configured to detect a plurality of saturation degrees for each of the plurality of focus evaluation values, and a focusing unit configured to drive the focus lens by using focus evaluation values for focusing selected based on the plurality of saturation degrees out of the plurality of focus evaluation values. The detector changes a parameter used to detect the plurality of saturation degrees based on the setting condition.

Abstract: An image sensor may include: a substrate including a plurality of pixels including a first pixel and a second pixel that are located adjacent to each other in a first direction, the first pixel including a first photoelectric conversion element and an open part which is eccentrically located in the first pixel in the first direction and the second pixel including a second photoelectric conversion element; a light-shield pattern that is formed over a part of the first photoelectric conversion element of the first pixel; and a light blocking layer formed between the first photoelectric conversion element and the second photoelectric conversion element.

Abstract: The present technology relates to an imaging device that can reduce the size thereof, and to an electronic apparatus. An upper substrate and a lower substrate are stacked. A pixel and a comparing unit that compares the voltage of a signal from the pixel with the ramp voltage are provided on the upper substrate, the ramp voltage varying with time. A storage unit that stores a code value obtained at a time when a comparison result from the comparing unit is inverted is provided on the lower substrate. The comparing unit is formed with a transistor that receives the voltage of the signal from the pixel at the gate, receives the ramp voltage at the source, and outputs a drain voltage. Accordingly, the imaging device can be made smaller in size. The present technology can be applied to image sensors.

Abstract: A color filter array includes color filter units each of which is a square array formed by four square pixels. The first color pixel and the second color pixel are arranged to form a row, the two third color pixels are arranged to form another row, and a row pixel direction of the color filter unit relative to a horizontal direction is inclined by 45° to left or right. The color filter array is an inclined rectangular array, pixels from an intermediate row to a first row or to a last row in a same direction is progressively decreased with a decrement of 1 or 2, and pixels in the first row and the last row is 1 or 2. The application can significantly increase the area of pixels of the unit color filter, and improve the sensitivity of the image sensor without reducing the resolution of the image sensor.

Abstract: A pixel arrangement structure of an OLED display is provided. The pixel arrangement structure includes: a first pixel having a center coinciding with a center of a virtual square; a second pixel separated from the first pixel and having a center at a first vertex of the virtual square; and a third pixel separated from the first pixel and the second pixel, and having a center at a second vertex neighboring the first vertex of the virtual square.

Abstract: A solid state image sensor includes a semiconductor substrate where photoelectric conversion regions for converting light into charges are arranged per pixel planarly arranged; an organic photoelectric conversion film laminated at a light irradiated side of the semiconductor substrate via an insulation film and formed at the regions where the pixels are formed; a lower electrode formed at and in contact with the organic photoelectric conversion film at a semiconductor substrate side; a first upper electrode laminated at a light irradiated side of the organic photoelectric conversion film and formed such that ends of the first upper electrode are substantially conform with ends of the organic photoelectric conversion film when the solid state image sensor is planarly viewed; and a film stress suppressor for suppressing an effect of a film stress on the organic photoelectric conversion film, the film stress being generated on the first upper electrode.

Abstract: A photographing method for a terminal that comprises a monochrome camera and a color camera, the method including simultaneously photographing a same to-be-photographed scene using the monochrome camera and the color camera and separately obtaining K frames of images, where the monochrome camera uses a full-size operation mode, where the color camera uses a binning operation mode, and where K?1, obtaining a first image corresponding to the monochrome camera and a second image corresponding to the color camera, obtaining high-frequency information according to the first image, obtaining low-frequency information according to the second image, and fusing the first image and the second image according to the high-frequency information and the low-frequency information, and generating a composite image of the to-be-photographed scene.

Abstract: An image sensor includes a plurality of first pixel groups each having a main sensitivity to light of a corresponding one of a plurality of wavelength bands, and a second pixel group having the main sensitivity to a wavelength band including the plurality of wavelength bands. Each of the plurality of first pixel groups and the second pixel group includes a plurality of polarization pixel groups having the main sensitivity to each of polarization components having three or more polarization azimuths. A ratio of the number of pixels in the plurality of polarization pixel groups in the second pixel group to a total number of pixels on the image sensor is larger than a ratio of the number of pixels in the plurality of polarization pixel groups in each of the plurality of first pixel groups to the total number of pixels.

Abstract: Provided is a solid-state imaging apparatus that is formed so that, in a pixel array unit in which combinations of a first pixel corresponding to a color component of a plurality of color components and a second pixel having higher sensitivity to incident light as compared with the first pixel are two-dimensionally arrayed, a first electrical barrier formed between a first photoelectric conversion unit and a first unnecessary electric charge drain unit in the first pixel, and a second electrical barrier formed between a second photoelectric conversion unit and a second unnecessary electric charge drain unit in the second pixel have different heights, respectively.

Abstract: A back light apparatus includes a plurality of light sources configured to generate light; and a light guide part, wherein the light guide part includes a light guide plate configured to change a path of the light; a first pattern part disposed on a first surface of the light guide plate and configured to emit the light in a first direction; and a second pattern part disposed on a second surface of the light guide plate and configured to emit the light in a second direction.

Abstract: A solid-state imaging element including a phase difference detection pixel pair that includes first and second phase difference detection pixels is provided. In particular, each phase difference detection pixel of the first and second phase difference detection pixels includes a first photoelectric conversion unit arranged at an upper side of a semiconductor substrate and a second photoelectric conversion unit arranged within the semiconductor substrate. The first photoelectric conversion film may be an organic film. In addition, phase difference detection pixels may be realized without using a light shielding film.

Abstract: The present disclosure relates to a solid state image sensor, a fabrication method, and an electronic apparatus, which enable to efficiently provide trench structures, which surrounds respective pixel sections of the solid state image sensor, and through-electrodes side by side. A solid state image sensor according to a first aspect of the present disclosure includes photoelectric conversion sections formed in respective pixel sections of a semiconductor substrate, trench structures defined by walls of insulating films formed in a depth direction of the semiconductor substrate and surrounding the respective pixel sections, and through-electrodes formed through the semiconductor substrate at positions overlapping the respective trench structures. The present disclosure can be applied, for example, to back-side illumination CMOS image sensors.

Abstract: There is provided a solid-state imaging device including: one or more photoelectric conversion elements provided on side of a first surface of a semiconductor substrate; a through electrode coupled to the one or more photoelectric conversion elements, and provided between the first surface and a second surface of the semiconductor substrate; and an amplifier transistor and a floating diffusion provided on the second surface of the semiconductor substrate, in which the one or more photoelectric conversion elements are coupled to a gate of the amplifier transistor and the floating diffusion via the through electrode.

Abstract: An imaging device includes a light separator that separates light into light bands, and imaging elements that each receives one of the light bands and generates a corresponding signal. Each of the imaging elements has a pixel size of at most 2.5 ?m by 2.5 ?m. A registration error among the imaging elements is equal to or less than a threshold determined according to the pixel size.

Abstract: There is provided an imaging device including a pixel array section including pixel units two-dimensionally arranged in a matrix pattern, each pixel unit including a photoelectric converter, and a plurality of column signal lines disposed according to a first column of the pixel units. The imaging device further includes an analog to digital converter that is shared by the plurality of column signal lines.

Abstract: Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for aligning a template and a substrate, the method including obtaining a moiré image based on an interaction of light between corresponding features of the template and the substrate, the moiré image including a plurality of moiré fringe strips; compressing each moiré fringe strip of the moiré image by an optical lens array based on a pixel height of an acquisition device, the acquisition device including one or more line scan cameras; processing the compressed moiré image by each of the line scan cameras of the acquisition device to determine a misalignment between the template and the substrate; and based on the determined misalignment, adjusting a relative positioning between the template and the substrate.

Abstract: Provided are an apparatus and a method for generating an image with reduced blown-out highlight regions. The apparatus includes an image processing section that inputs a RAW image corresponding to an output image of an imaging device. The image processing section performs a demosaicing process, that generates RGB images having all pixels set to respective colors of RGB by demosaicing the RAW image and performs a white-balancing process that white-balances the respective RGB images resulting after the demosaicing process. The image processing section performs a pixel value estimation process that performs a G pixel value estimation process in a saturated pixel region of the G image resulting after the white balancing process by using pixel values of the R and B images resulting after the white balancing process at the same pixel position as the G pixel subject to pixel value estimation.

Abstract: Methods, systems, and apparatuses are provided to perform phase-detection autofocus control. By way of example, the methods can receive luminance values measured by a plurality of sensing elements in a sensor array, and the sensing elements can include imaging pixels and phase-detection pixels. The methods can compare luminance values measured by at least one of the phase-detection pixels to luminance values associated with a subset of the imaging pixels including two or more imaging pixels. The comparison can be performed at extended horizontal density or full horizontal density along a first sensor-array row that includes the at least one phase-detection pixel and the two or more imaging pixels. The methods can also perform a phase-detection autofocus operation based on an outcome of the comparison.

Abstract: The present disclosure is directed to a method of forming a polarization grating structure (e.g., polarizer) as part of a grid structure of a back side illuminated image sensor device. For example, the method includes forming a layer stack over a semiconductor layer with radiation-sensing regions. Further, the method includes forming grating elements of one or more polarization grating structures within a grid structure, where forming the grating elements includes (i) etching the layer stack to form the grid structure and (ii) etching the layer stack to form grating elements oriented to a polarization angle.

Abstract: An image sensor includes: a plurality of microlenses arranged in a two-dimensional pattern; and a plurality of pixels that are provided in correspondence to each of the microlenses and receive lights of different color components, respectively. Pixels that are provided at adjacent microlenses among the microlenses and that receive lights of same color components, are adjacently arranged.

Abstract: An image sensor includes two or more phase-difference detection pixels disposed adjacent to each other, a plurality of general pixels spaced apart from the phase-difference detection pixels, first and second peripheral pixels, and first to third light shields. The first and second peripheral pixels are adjacent to the phase-difference detection pixels, and between the phase-difference detection pixels and the general pixels. The first light shield is disposed in one of the general pixels and has a first width. The second light shield extends into the first peripheral pixel from a first area between the phase-difference detection pixels and the first peripheral pixel, and has a second width different from the first width. The third light shield extends into the second peripheral pixel from a second area between the phase-difference detection pixels and the second peripheral pixel, and has a third width different from the first width.

Abstract: An image sensor pixel is disclosed. The pixel may include a photodiode having a first region with a first potential and a second region with a second, higher potential, with the second region being offset in depth from the first region in a semiconductor chip. A storage node may be positioned at substantially the same depth as the second region of the photodiode. A storage gate may be operable to transfer charge between the photodiode and the storage node.

Abstract: An electronic device and a method for controlling thereof are provided. The device includes a light emitter, an image sensor including first pixels controlled based on a first parameter and second pixels controlled based on a second parameter, a sensor, and a processor. The processor detects a first object and a second object in an image area, determines the first and second parameters based on a first property of the first object and a second property of the second object, said determination is based on a light intensity that is outputted from the light emitter and reflected by the first and second objects, acquires a first image of the first object according to the first parameter and a second image of the second object according to the second parameter, and synthesizes a first area corresponding to the first object with a second area corresponding to the second object.

Abstract: An imaging device includes a plurality of arranged imaging elements each including: a light-receiving element configured to generate charge from received light by photoelectric conversion, a floating diffusion configured to convert the charge generated by the light-receiving element into voltage, a charge transfer switch configured to transfer the charge from the light-receiving element to the floating diffusion, a reset switch configured to reset the voltage of the floating diffusion, and a source follower configured to amplify the voltage of the floating diffusion. The reset switch is configured to reset the voltage of the floating diffusion a plurality of times for each of predetermined pixel groups in a single image data acquisition period. The charge transfer switch is configured to transfer the charge from the light-receiving element to the floating diffusion a plurality of times for each of the pixel groups in the single image data acquisition period.

Abstract: A photo diode includes a pixel unit, a photo conversion layer, and a dielectric layer. The pixel unit includes a pair of pixels. The photo conversion layer is above the pixel unit and has a pair of portions, each of which corresponds to a respective one of the pixels. The dielectric layer is between the portions of the photo conversion layer. A method of manufacturing the photo diode is also disclosed.

Abstract: An image sensor pixel may include multiple split photodiodes that are covered by a single microlens. The image sensor may include a charge overflow capacitor coupled to a pixel charge storage within the image sensor via a gain control transistor. The image sensor pixel may have phase detection capabilities in a first mode of operation enabled by comparing phase signals generated from the split photodiodes. The image sensor pixel also may generate and readout image signals simultaneously in both rolling shutter operations and global shutter operations in a second mode of operation. The image sensor pixel may also generate an image using a linear combination of at least two signals read out using the charge overflow capacitor and light flickering mitigation operations. The image may be a high dynamic range image that is generated from at least a low exposure signal and a high exposure signal.

Abstract: An imaging device includes an imaging unit configured to capture an image of a subject formed by an imaging optical system and to generate a moving-image signal based on the captured image; and a processor comprising hardware, wherein the processor is configured to implement: an inter-frame change information acquisition unit configured to acquire inter-frame change information related to a change between at least two frames of the moving-image signal; an intra-frame information acquisition unit configured to acquire intra-frame information which is information within one frame included in the moving-image signal; and a brightness adjustment determination unit configured to determine behavior of brightness adjustment based on both of the inter-frame change information acquired by the inter-frame change information acquisition unit and the intra-frame information acquired by the intra-frame information acquisition unit.

Abstract: A monitoring unit for monitoring an environment outside of a motor vehicle includes a camera with an imaging sensor that has both color pixels and monochrome pixels. Pixel groups each include one or two color pixels and respectively three or two monochrome pixels. The pixel groups are arranged in a repeating pattern of partial color encoding.

Abstract: Light quantity information of an imaging optical system is acquired according to a focus detection position in an imaging screen. Conversion is performed from the light quantity information and a first aperture value of the imaging optical system, so that the first aperture value is converted into a second aperture value according to the focus detection position. A conversion coefficient is set according to the second aperture value and an exit pupil distance. A correction value to correct output signals from an imaging unit is obtained according to the second aperture value and an exit pupil distance.