Abstract: An image processing apparatus having a plurality of Bayer arrays each including 4 pixels sharing a common electrode connected to a vertical signal line wherein: each of the pixels has a pixel electrode connected to a horizontal signal line; and the location of each of the horizontal signal lines and the location of each of the pixel electrodes each connected to one of the horizontal signal lines are determined so that the locations in a neighboring Bayer array are a mirror image of counterpart locations in another Bayer array adjacent to the neighboring Bayer array.

Abstract: In a solid-state image pickup device according to this invention, because a photodiode 2 has a side close to a transfer transistor 3 is longer than an opposite side of the photodiode 2, the transfer transistor 3 can be increased in width. Therefore, it is possible to miniaturize the size of a pixel without causing deterioration in reading property. As a result, this invention can provide the solid-state image pickup device that achieves further miniaturization of pixels by applying an efficient layout of the pixels.

Abstract: Information provisioning includes acquiring one of an audio and a video elementary stream of content that is composed of a plurality of segments, and actual data of metadata that includes information related to the content. The metadata is divided into metadata processing units (MPU) corresponding to segments subjected to processing in the plurality of segments. A transport stream of a MPEG-2 system is generated that includes packetized elementary stream (PES) packets acquired by packetizing the segments of the data stream and metadata PES packets acquired by packetizing at least one MPU.

Abstract: According to one embodiment, a solid-state imaging device includes first and second pixel portions, first and second transfer transistors, first and second accumulation portions, an element isolation region, first and second amplifier transistors, and a first and second signal lines. The first and second pixel portions include photoelectric conversion elements, respectively. The first and second transfer transistors transfer first and second charges photoelectrically converted by the first and second pixel portions, respectively. The first and second accumulation portions are interposed between the first and second pixel portions, and accumulate the first and second charges, respectively. The element isolation region is interposed between the first and second accumulation portions. The first and second amplifier transistors amplify voltages generated in accordance with the first and second charges accumulated in the first and second accumulation portions, respectively.

Abstract: A single array of image sensors is used to obtain a plurality of different images at different levels of admitted exposure light from a common source level of exposure light. More particularly, first and second matrices of light-admitting elements are deployed in a single camera and disposed relative to focal lens light in front of corresponding first and second matrices of light-sensitive image sensors that are arrayed in a singular focal plane array in the camera and react equally to equal levels of color image information. The respective matrices of light-admitting elements transmit color image information from exposed focal lens light at different levels of brightness to their corresponding matrices of light-sensitive image sensors, wherein first and second images are acquired at the respective different levels of brightness from the respective matrices of the image sensors, and pixel data from the images combined to produce an HDR image.

Abstract: A color image sensor having a plurality of sensor elements arranged in a two-dimensional array, wherein the sensor elements each include an optical filter whose transmission behavior is electrically adjustable, and wherein the color image sensor includes a control for controlling the optical filters.

Abstract: An image sensing apparatus includes: an image sensor which generates an electrical signal commensurate with an amount of incident light, and has a photoelectric conversion characteristic comprised of a linear characteristic area where the electrical signal is outputted after being linearly converted in relation to the amount of incident light, and a logarithmic characteristic area where the electrical signal is outputted after being logarithmically converted in relation to the amount of incident light; an exposure evaluation value detector which detects an exposure evaluation value based on luminance information acquired from a subject in sensing an image of the subject; and an exposure controller which acquires a setting value for exposure based on the exposure evaluation value detected by the exposure evaluation value detector to control exposure of the image sensing apparatus, wherein the exposure controller determines a subject luminance for exposure setting based on the exposure evaluation value, and con

Abstract: An imaging device including phase difference detection pixels and, more particularly, an imaging device that comprises a plurality of pixels that are two-dimensionally arranged to capture an image and to detect phase difference, a first photoelectric conversion pixel row; and a second photoelectric conversion pixel row, wherein the first photoelectric conversion pixel row and the second photoelectric conversion pixel row are each disposed such that circuits formed in every pixel for phase difference detection are arranged opposite to each other with respect to an opening of a photoelectric conversion pixel. In the imaging device, phase difference detection may be performed with respect to entire photographed screen areas. In addition, the imaging device including phase difference detection pixels may have no defect pixels and thus improved image quality is obtained. Photographing and AF of a subject may be performed in low luminance.

Abstract: An imaging section outputs n pixel signals every pixel row of n×m pixels, and n AD conversion sections, corresponding to n pixel columns of the n×m pixels, convert the n pixel signals to n pixel values. A resolution control section controls the n AD conversion sections so that the AD conversion resolution of the n AD conversion sections become a first resolution, or a second resolution rougher than the first resolution, based on the AD conversion resolution of the n AD conversion sections and the n pixel values.

Abstract: An imaging element includes: a plurality of color filters arranged in a Bayer array; photoelectric conversion elements provided for the respective color filters; a signal adder circuit which carries out additions in each of the unit grids, by (i) adding up signals outputted from two photoelectric conversion elements corresponding to different colors of two color filters out of four color filters, and (ii) adding up signals outputted from two photoelectric conversion elements corresponding to remaining two color filters; and an A/D converter. The imaging element outputs: (i) a first digital image signal where signals of one color out of Ye (yellow) and Cy (cyan), and signals of G, are alternately placed; and (ii) a second digital image signal where signals of an other color out of Ye and Cy, which is different from the one color, and signals of Mg (magenta), are alternately placed.

Abstract: A color mask for an image sensor of a vehicle camera, the color mask having a matrix configuration of filter pixels having different spectral transmission behaviors, some filter pixels being transparent filter pixels, which are at least essentially uniformly transparent for optical light, and additional filter pixels being color pixels having a wavelength-selective transmission behavior, the color mask having a color pattern as a repeating configuration of filter pixels having a specific transmission behavior. The color mask has a central area having a first color pattern and a lower area and/or an upper area having a second color pattern, the first color pattern and the second color pattern being different, and the first color pattern containing transparent filter pixels.

Abstract: A pixel array comprises a plurality of photo-sensitive elements arranged in rows and columns and readout circuitry for reading a value of a photo-sensitive element. Shared readout circuitry is provided for a pair of adjacent photo-sensitive elements. Adjacent instances of the shared readout circuitry are staggered with respect to one another. For a layout having shared readout circuitry for a pair of photo-sensitive elements, adjacent instances of the shared readout circuitry are offset by a horizontal distance of one column and a vertical distance of one row of the array. The shared readout circuitry can serve a pair of adjacent photo-sensitive elements in a row or column of the array, or a pair of photo-sensitive elements which are diagonally adjacent in the array. An improved yield and symmetry results from staggering instances of the shared readout circuitry.

Abstract: A color pixel array includes a plurality of micropixels. Each micropixel includes a photosensitive element and a color filter optically aligned with the photosensitive element to filter incident light prior to reaching the photosensitive element. The micropixels are organized into a repeating pattern of triangular macropixels each having a triangular shape within the color pixel array.

Abstract: A scan conversion device includes a first buffer unit, a pixel packing unit, a second buffer unit, and a scan output unit. The first buffer unit stores therein pixel signals of the input image on every line in a main scanning direction thereof. The pixel packing unit groups N (N?2) pixel signals on each line into pixel signal packs according to a predetermined pixel combination rule, and outputs them sequentially. The second buffer unit stores therein the pixel signal packs and aligns them in a second main scanning direction different from the main scanning direction. The scan output unit sequentially outputs the pixel signal packs aligned in the second main scanning direction. According to this configuration, a scan pattern of the input image is changed into a scan pattern of outputting every N output lines in the second main scanning direction.

Abstract: A solid state imaging device includes shared amplification transistors and reset transistors arranged, for example, in a checkered pattern so that centroid of photo diodes 2 of the same colors are arranged substantially at an identical pitch. As a result, the resolution of the solid state imaging device can be maintained without considering irregularities of the incident light for each unit pixel.

Abstract: An image capturing element comprising photoelectric converting elements that are arranged two-dimensionally and photoelectrically convert incident light into an electric signal; aperture masks that correspond one-to-one with the photoelectric converting elements; and color filters that correspond one-to-one with the photoelectric converting elements. Among n adjacent photoelectric converting elements, where n is an integer no less than three, apertures of the aperture masks corresponding to at least three of the photoelectric converting elements are included within each pattern of a color filter pattern formed from at least two types of the color filters that respectively pass different wavelength bands, and are positioned to respectively pass light from different partial regions within a cross-sectional region of the incident light, and photoelectric converting element groups that are each formed of the n photoelectric converting elements are arranged in series.

Abstract: A driving method of a solid-state imaging device including a plurality of photoelectric conversion elements as defined herein, includes performing first driving which mixes a first electric charge generated in the first photoelectric conversion element with a second electric charge generated in the photoelectric conversion element for luminance detection, converts the electric charges obtained by the mixing into a signal, and outputs the signal.

Abstract: A plurality of kinds of color filters are disposed at each of pixels in accordance with a color array of two rows and two columns at a pixel section of a solid state imaging device. A first signal outputting circuit and a second signal outputting circuit each perform an addition read of electrical signals from the pixels of one/the other color included in a line to be read. An addition controlling circuit shifts sampling positions of the pixels which are added at a time of the addition read by a unit of the color array between the first signal outputting circuit and a second signal outputting circuit.

Abstract: A characteristic detecting unit detects characteristics of a digital imaged signal at every phase shift interval set in advance. A timing adjustment unit gives a phase adjustment instruction of a pulse so as to converge to an imaging phase in the digital imaged signal at which the characteristics are a predetermined value or within a predetermined range. A shift interval switching unit switches the phase shift interval according to photographing conditions of an imaging element.

Abstract: A portable hand held optical reader having a specially constructed two-dimensional image sensor array is operational in a bar code decoding mode and in a picture taking mode. The specially constructed image sensor array, in one embodiment, is a hybrid monochrome and color image sensor pixel array, wherein a first subset of the pixels are monochrome pixels devoid of wavelength selective color filter elements and a second subset of the pixels are color sensitive pixels including wavelength selective color filter elements.

Abstract: A color pixel array includes a plurality of micropixels. Each micropixel includes a photosensitive element and a color filter optically aligned with the photosensitive element to filter incident light prior to reaching the photosensitive element. The micropixels are organized into a repeating pattern of triangular macropixels each having a triangular shape within the color pixel array.

Abstract: According to one embodiment, in a solid-state imaging device having color pixels in which color filters are arranged for respective pixels, two blocks of two pixels in the row direction×two pixels in the column direction of an X1 color are arranged on one diagonal line, and a block of two pixels in the row direction×two pixels in the column direction of one of an X2 color and an X3 color and a block of two pixels of the other color and two pixels of an X4 color arranged diagonally are arranged on the other diagonal line, and magnitudes of wavelengths satisfy the following relationship: X3 color<X1 color<X4 color<X2 color.

Abstract: A scan conversion device includes a first buffer unit, a pixel packing unit, a second buffer unit, and a scan output unit. The first buffer unit stores therein pixel signals of the input image on every line in a main scanning direction thereof. The pixel packing unit groups N (N?2) pixel signals on each line into pixel signal packs according to a predetermined pixel combination rule, and outputs them sequentially. The second buffer unit stores therein the pixel signal packs and aligns them in a second main scanning direction different from the main scanning direction. The scan output unit sequentially outputs the pixel signal packs aligned in the second main scanning direction. According to this configuration, a scan pattern of the input image is changed into a scan pattern of outputting every N output lines in the second main scanning direction.

Abstract: A solid-state imaging device comprises a pixel array including a plurality of pixels arranged in rows and columns, and a readout unit operable to read out pixel signals of the pixels included in the pixel array row by row. The readout unit (i) reads out pixel signals of a row of pixels in column order of the pixel array during a horizontal readout period, except during a readout-standby period that is within the horizontal readout period, and (ii) suspends reading out the pixel signals of the row of pixels in the column order during the readout-standby period.

Abstract: In a solid-state imaging device, a primary-color Bayer color filter is provided on an imaging pixel area defined by pixels having different structures. Color-component filters for the same color in the color filter are disposed correspondingly to pixels having the same structure. More specifically, pixels are arranged in consideration of the arrangement of color-component filters of the color filter, or the color-component filters are arranged in consideration of the arrangement of the pixels.

Abstract: A method of capturing an image of a scene using an image capture device having an array of pixels, wherein the array of pixels includes pixels of different colors, includes, for a first duration, capturing a first portion of the scene with a first plurality of the pixels of a first color, and for a second duration, capturing a second portion of the scene with a second plurality of the pixels of a second color. The first and second durations are different and the first and second durations are chosen, at least in part, to improve the signal to noise ratio of the image capture device.

Abstract: Each of the unit cells provided on a semiconductor substrate of a solid-state imaging device comprises a first p-type well which isolates the semiconductor substrate into an n-type photoelectric conversion region, a second p-type well which is formed in the surface of the photoelectric conversion region and in which a signal scanning circuit section is formed, and a signal storage section which is comprised of a highly doped n-type layer which is formed in the surface of the photoelectric conversion region apart from the second p-type well and higher in impurity concentration than the photoelectric conversion region. The signal storage section having its part placed under a signal readout gate adapted to transfer a packet of signal charge from the storage section to the signal scanning circuit section and its part at which the potential becomes deepest located under the readout gate.

Abstract: A solid state imaging device comprises a color filter, a pixel, and first and a second output lines. The color filter has color filter components of a first and second color. Each pixel is covered by the color filter component and has a photoelectric conversion element. The photoelectric conversion element generates color pixel signals according to amount of light received by the photoelectric conversion element. A first pixel is covered by the first color filter component. A first color pixel signal is generated by the first pixel. The first output line outputs only the first color pixel signal. A second pixel is covered by the second filter component. A second color pixel signal is generated by the second pixel. The second output line outputs only the second color pixel signal. The first and second pixels are arranged in two dimensions.

Abstract: An image sensor for capturing a color image comprising a two dimensional array of light-sensitive pixels including panchromatic pixels and color pixels having at least three different color responses, the pixels being arranged in a rectangular minimal repeating unit having at least eight pixels and having at least two rows and two columns, wherein for a first color response, the color pixels having the first color response alternate with panchromatic pixels in at least two directions, and for each of the other color responses there is at least one row, column or diagonal of the repeating pattern that only has color pixels of the given color response and panchromatic pixels.

Abstract: A method of forming a full-color output image from a color filter array image having a plurality of color pixels having at least two different color responses and panchromatic pixels, comprising capturing a color filter array image using an image sensor including panchromatic pixels and color pixels having at least two different color responses, the pixels being arranged in a repeating pattern having a square minimal repeating unit having at least three rows and three columns, the color pixels being arranged along one of the diagonals of the minimal repeating unit, and all other pixels being panchromatic pixels; computing an interpolated panchromatic image from the color filter array image; computing an interpolated color image from the color filter array image; and forming the full color output image from the interpolated panchromatic image and the interpolated color image.

Abstract: A method for forming a final digital color image, includes: capturing an image using an image sensor having panchromatic pixels and color pixels corresponding to at least two color photoresponses; providing from the captured image a digital high resolution panchromatic image and a digital high resolution color differences image; and using the digital high resolution panchromatic image and the digital high resolution color differences image to produce the final digital high resolution full color image.

Abstract: A new method of reading an imager is achieved. The method comprises providing an imager array comprising n rows and m columns where a pair of rows can be read during a single row access time. A first image field is completed by sequentially reading and storing pixel values of pairs of adjacent rows of the imager array. The reading begins at a first row, and the reading stops when less than three rows are unread. Thereafter pixel values of the next row are read and not stored. Thereafter pixel values of the first row of the imager array are read and not stored. A second image field is completed by sequentially reading and storing pixel values of pairs of adjacent rows. The reading begins at the second row, the reading stops when less than two rows are unread.

Abstract: A color image sensor includes an array of pixels arranged in a plurality of pixel groups, each pixel group including a floating diffusion that is shared by four pixels disposed in a 2×2 arrangement. Each of said four pixels includes a photodetector and a color filter superposed over the photodetector, wherein a first pair of said four pixels include green color, and a second pair of said four pixels includes either red or blue color filters. A control circuit controls the pixel groups such that discrete image information is generated from each pixel in normal light situations, and such that summed image information is generated from each pixel group in low light situations by simultaneously connecting the green pixels to the floating diffusion during a first time period, and simultaneously connecting the red/blue pixels to said floating diffusion during a second time period.

Abstract: A semiconductor substrate has an active pixel area comprising a stack of lower electrodes, an intermediate layer of an organic photoelectric conversion material, an upper electrode, a transparent insulating layer and first to third color layers. Disposed outside the active pixel area is a polish stop layer having a high resistance to polishing. In planarizing the first to third color layers, the polishing operation is ended upon reaching the polish stop layer.

Abstract: A solid state imaging apparatus which includes a plurality of pixels two-dimensionally arranged in the vertical direction and the horizontal direction and every two vertically or horizontally adjacent ones of the plurality of pixels have color filters of different colors. In a predetermined period of time, charge signals received from ones of the plurality of pixels arranged in the vertical direction or the horizontal direction which include color filters of the same color (represented by circles) are sequentially output.

Abstract: A large image sensor structure is created by tiling a plurality of image sensor dies, wherein each of the image sensor dies includes a pixel array that extends to three edges of the die, and control circuitry located along a fourth edge of the die. None of the control circuitry required to access the pixel array (e.g., none of the row driver circuitry) is located in the pixel array, thereby enabling consistent spacing of pixels across the pixel array. Because the pixel array of each image sensor die extends to three edges of the die, the pixel array of each image sensor die can abut up to three pixel arrays in other image sensor dies to form a large image sensor structure having 2×N tiled image sensor dies.

Abstract: An image sensor with an image area having a plurality of pixels with each pixel having a photodetector and a substrate of a first conductivity type and a first layer of a second conductivity type formed between the substrate and the photodetectors. The first layer spans the image area and is biased at predetermined potential with respect to the substrate for driving excess carriers into the substrate to reduce cross talk. One or more adjacent active electronic components can be disposed in the first layer within each pixel and electronic circuitry can be disposed in the substrate outside of the image area.

Abstract: Solid state CMOS active pixel sensor devices having unit pixels that are structured to provide improved uniformity of pixel-to-pixel sensitivity across a pixel array without the need for an additional light shielding layer. For example, unit pixels with symmetrical layout patterns are formed whereby one or more lower-level BEOL metallization layers are designed operate as light shielding layers which are symmetrically patterned and arranged to balance the amount of incident light reaching the photosensitive regions.

Abstract: Disclosed is an image sensing apparatus comprising a plurality of two-dimensionally arrayed pixels each having a photodiode and a floating diffusion area for temporarily storing a charge signal that has accumulated in the photodiode; an output unit that outputs the charge signal, which has been transferred to the floating diffusion area, successively pixel by pixel; a scanning unit having a reset mode for resetting the photodiodes and floating diffusion areas successively by prescribed unit, a first transfer mode for transferring the charge signal, which has accumulated in the photodiodes, to the floating diffusion areas successively by the prescribed unit at prescribed time intervals upon lapse of a prescribed period of time from start of reset, and a second transfer mode for transferring the charge signal, which has been transferred to the floating diffusion areas, to the output unit.

Abstract: A variable sensitivity imaging device comprises: a substrate; a photosensitive layer which is stacked above the substrate, and which is interposed between a pixel electrode layer and an opposing electrode layer; a signal reading section, formed on the substrate, that reads a signal corresponding to photo-charges which are generated by incidence of light into the photosensitive layer; and a pulse voltage applying section that applies a variable pulse-width pulse voltage between the pixel electrode layer and the opposing electrode layer.

Abstract: A color solid-state imaging device including: a semiconductor substrate; a photoelectric conversion layer provided over the semiconductor substrate, for absorbing light of a first color among three primary colors so as to generate photocharges; plural charge storage regions arranged in a surface layer of the semiconductor substrate, for storing the photocharges; plural first photodiodes arranged in the surface layer of the substrate, for detecting mixed light of second and third colors among the three primary colors that has passed through the photoelectric conversion layer and for storing generated photocharges; plural second photodiodes arranged in the surface layer of the semiconductor substrate, for detecting light of the second color of the mixed light that has passed through the photoelectric conversion layer and for storing generated photocharges; color filter layers provided over the second photodiodes, for interrupting light of the third color; and signal reading units as defined herein.

Abstract: A scan conversion device includes a first buffer unit, a pixel packing unit, a second buffer unit, and a scan output unit. The first buffer unit stores therein pixel signals of the input image on every line in a main scanning direction thereof. The pixel packing unit groups N (N?2) pixel signals on each line into pixel signal packs according to a predetermined pixel combination rule, and outputs them sequentially. The second buffer unit stores therein the pixel signal packs and aligns them in a second main scanning direction different from the main scanning direction. The scan output unit sequentially outputs the pixel signal packs aligned in the second main scanning direction. According to this configuration, a scan pattern of the input image is changed into a scan pattern of outputting every N output lines in the second main scanning direction.

Abstract: A variable sensitivity imaging device comprises: a substrate; a photosensitive layer which is stacked above the substrate, and which is interposed between a pixel electrode layer and an opposing electrode layer; a signal reading section, formed on said substrate, that reads a signal corresponding to photo-charges which are generated by incidence of light into the photosensitive layer; and a voltage applying section that applies a voltage for making a sensitivity variable between the pixel electrode layer and the opposing electrode layer.

Abstract: A solid-state imaging apparatus comprising a semiconductor substrate, a multiplicity of photo electric conversion elements, a vertical electric charge transfer device having a plurality of vertical electric charge transfer channels, reading out parts, each comprising a reading out electrode, wherein the reading out electrode and at least one of transfer electrodes adjoining to the reading out electrode are adjoining to same photo electric conversion element is characterized by that electric charge accumulated in each photo electric conversion element is transferred by every other line of vertical electric charge transfer channels in the vertical direction. The solid-state imaging apparatus can prevent color mixture even when the inter-VCCD blooming is occurred.

Abstract: An image processing apparatus having a plurality of Bayer arrays each including 4 pixels sharing a common electrode connected to a vertical signal line wherein: each of the pixels has a pixel electrode connected to a horizontal signal line; and the location of each of the horizontal signal lines and the location of each of the pixel electrodes each connected to one of the horizontal signal lines are determined so that the locations in a neighboring Bayer array are a mirror image of counterpart locations in another Bayer array adjacent to the neighboring Bayer array.

Abstract: The present invention provides a CMOS image sensor for broadening a dynamic range by controlling an integration time for each pixel to thereby obtain a high quality image with a low noise. The CMOS image sensor according to the present invention includes plural pixels, each for storing an integration time of a present frame, and control means for controlling the integration time of a next frame based on the stored integration time.

Abstract: An active CMOS pixel sensor includes a red photodiode and a green photodiode coupled to sense nodes. Blue photodiodes are coupled to a blue sense node through select transistors. A blue reset transistor is coupled between a supply node and the blue sense node. A source-follower transistor is coupled to the blue sense node. A blue row-select transistor is coupled to the source-follower transistor and a biased blue column line. Red and green amplifier transistors have gates coupled to sense nodes, drains coupled to a supply node, and sources. Red and green reset transistors have drains coupled to the drains of the amplifier transistors, sources coupled to the sense nodes. Feedback capacitors couple the sense nodes to the reset transistor drains. Red and green row-select transistors have drains coupled to the sources of the amplifier transistors, sources coupled to biased column lines, and gates coupled to a red-green row-select line.

Abstract: A signal processing unit subjects to signal processing first image signals, obtained as the output from a three-sensor-system sensor unit which uses CMOS sensors or the like, thereby obtaining high-image-quality second image signals. The three sensors are positioned at placement positions which are suitable for signal processing at the signal processing unit. The suitable placement positions have been obtained by learning performed beforehand. In one arrangement, the signal processing unit evaluates the second image signals, and controls the placement positions of the three sensors according to the evaluation results. In another arrangement, the first signals are evaluated in a predetermined region, and the capabilities of the sensors at the predetermined region are changed according to the evaluation results. In another arrangement, the sensor unit is controlled according to the level distribution of the first image signals. The present invention can be applied to still or video digital cameras.

Abstract: An image pickup apparatus which can photograph a high-definition image and a moving image of lower resolution at high quality and an image pickup system which uses the image pickup apparatus are provided. Unit pixel groups each of which comprises plural pixels including photoelectric conversion units and transfer transistors for transferring signal charges from the photoelectric conversion units, an amplification transistor common to the plural pixels, and the like are arranged in row and column directions. With respect to the plural unit pixel groups mutually adjacent in the row direction, control lines for controlling the transfer transistors respectively corresponding to the adjacent two photoelectric conversion units are alternately connected to an odd row and an even row in the row direction.

Abstract: A first voltage is impressed to a reading out electrode for reading out accumulated signal electric charges from photo electric conversion elements to transfer channels in a reading out period and at a same time during the reading out period a second voltage is imposed to at least one of the transfer electrodes adjoining to the reading out electrode for each photo electric conversion element for accumulating the signal electric charge in the vertical electric charge transfer channel under the one of the transfer electrode in a first mode for outputting signal electric charges independently, and only the first voltage is imposed only to the reading out electrode for reading out the accumulated signal electric charge from the photo electric conversion elements to the transfer channels in a reading out period in the second mode for adding the signal electric charges.