Abstract: There is provided in one embodiment an apparatus having an image sensor array. In one embodiment, the image sensor array can include monochrome pixels and color sensitive pixels. The monochrome pixels can be pixels without wavelength selective color filter elements. The color sensitive pixels can include wavelength selective color filter elements.

Abstract: An imaging device with a plurality of image sensing pixels and a plurality of event detection pixels is provided. Each image sensing pixel includes a photoelectric conversion element and an imaging signal generation readout circuit. The image sensing readout circuit can be shared by a plurality of photoelectric conversion elements. Each event detection pixel includes a photoelectric conversion element and an event detection readout circuit. The event detection readout circuit can be shared by a plurality of photoelectric conversion elements. In addition, the photoelectric conversion element of an event detection pixel can be selectively connected to a shared imaging signal generation readout circuit. The number of image sensing pixels is greater than the number of event detection pixels. In addition, the area of a photoelectric conversion element of an event detection pixel can be greater than the area of a photoelectric conversion element of an image sensing pixel.

Abstract: An imaging device having a motion detecting function and an image processing function is provided. The imaging device can detect a difference between a reference frame image and a comparative frame image, and can switch from a motion detecting mode to a normal image capturing mode when a significant difference is detected. A low-frame-rate operation in the motion detecting mode can reduce power consumption. Moreover, the imaging device has an image recognition function in combination with the motion detecting function, so that switching from the motion detecting mode to the normal image capturing mode can be performed when a particular image is recognized.

Abstract: In a method of filtering an image from data received from a CMOS camera, image data is loaded by a computational device from the camera. Camera parameters corresponding to the CMOS camera are loaded. Fixed pattern noise associated with the camera is removed based on the camera parameters. A readout noise estimation based on characteristics of the camera and filtering estimated readout noise from the image data is generated. Sparse filtering: selecting sub-frames within the image that have similar features; applying a three-dimensional transform on the sub-frames transforming the sub-frame data into a non-two-dimensional domain and generating a first transformed data set; filtering noise data from the first transformed data set to generate a first thresholded image data set; and applying a reverse three-dimensional transform on the first thresholded image data set so as to generate an image.

Abstract: A sensor has plurality of pixels arranged in a plurality of rows and columns with row control circuitry for controlling which one of said rows is activated and column control circuitry for controlling which of said pixels in said activated row is to be activated. The column circuitry has memory configured to store information indication as to which of the pixels are defective, wherein each of the pixels has a photodiode and a plurality of transistors which control the activation of the photodiode. A first transistor is configured to be controlled by a column enable signal while a second transistor is configured to be controlled by a row select signal.

Abstract: Provided is an imaging device that includes an imaging unit that performs an imaging operation, a data generator that generates first power supply voltage data corresponding to a first power supply voltage and a flag generation section that generates a flag signal for the first power supply voltage by comparing the first power supply voltage data and first reference data. The first power supply voltage is supplied to the imaging unit.

Abstract: An image sensing device includes a pixel array including a plurality of unit pixels coupled to a plurality of row lines, wherein at least one of the unit pixels includes a photo-diode for generating photo charges corresponding to an incident light and a transfer transistor for transferring the photo charges to a floating diffusion (FD) node in response to a transfer control signal transferred through a corresponding row line; a row control circuit disposed at a first side of the pixel array and suitable for providing, to the respective row lines, the transfer control signal having a voltage level between a first voltage and a second voltage; and a bias compensation circuit disposed at a second side of the pixel array and suitable for driving the transfer control signal to the second voltage during a reset read-out section of each of the row lines.

Abstract: The present disclosure provides an active pixel sensing circuit structure, an active pixel sensor, a display penal and a display device, aiming to reduce an area of the active pixel sensing circuit structure. A control electrode of a second transistor in the active pixel sensing circuit structure is located in a first metal layer. A first voltage signal line, a second voltage signal line, and an output signal line are located in a second metal layer that is located on a side of the first metal layer facing away from the substrate. A first electrode of a photodiode is connected to the control electrode of the second transistor through a first connection line. The first connection line is located in a third metal layer that is located on a side of the second metal layer facing away from the substrate.

Abstract: The present application relates generally to systems and methods for using machine vision to provide information on one or more aspects of an additive fabrication device, such as calibration parameters and/or an object formed by the device or in the process of being formed by the device. According to some aspects, a method is provided for calibrating an additive fabrication device. According to some aspects, a method is provided for assessing at least a portion of an object formed using an additive fabrication device. According to some aspects, a method is provided for fabricating a second object in contact with a first object using an additive fabrication device. According to some aspects, an additive fabrication device configured to perform one or more of the above methods may be provided.

Abstract: A method for calibrating an imaging system can include at least the following method acts: illuminating a sample through a pinhole mask using an excitation light; capturing an image of the sample using a sensor; converting the image into data; in a processing module: filtering the data using a known spacing of pinholes in the pinhole mask to obtain filtered data that corresponds to the known spacing, using a threshold to identify regions of the filtered data that are bright enough to be associated with a pinhole, calculating the centroids of the regions, and fitting a known pattern for the pinhole mask to the regions in order to identify the best fit data for the filtered data; and storing, in a storage medium, the best fit data for use in a subsequent confocal capture routine.

Abstract: An image sensor including an array of pixel elements is operated according to two operation modes to modulate the conversion gain of the pixel to operate the image sensor based on the impinging light conditions. More specifically, an image sensor pixel element is operated in a high conversion gain mode for low light conditions and in a low conversion gain mode for bright light conditions. The low conversion gain mode implements charge sharing between the floating diffusion and the photodiode. The low conversion gain mode further implements partial reset where the photodiode and the floating diffusion are reset to the same potential and to a potential slightly less than the pinning voltage of the photodiode.

Abstract: A solid-state imaging device, such as a CMOS sensor, includes a unit pixel having a charge generation unit for generating signal charge, a floating diffusion for accumulating the signal charge generated by the charge generation unit, a transfer gate transistor for transferring the signal charge in the charge generation unit to the floating diffusion, a reset transistor for resetting the floating diffusion, and an amplifying transistor for generating a signal in accordance with the signal charge generated by the charge generation unit and outputting the signal to a vertical signal line. The width of a reset pulse for driving the reset transistor is sufficiently decreased to, for example, less than or equal to ½, and preferably less than or equal to ? of the response time of a signal that has occurred on the vertical signal line in response to the reset pulse.

Abstract: An image sensor including a plurality of photoelectric conversion elements arranged in a main scanning direction, a plurality of switching elements connected to respective ones of the photoelectric conversion elements, individually, and a controller for generating a clock signal to control the switching elements. The photoelectric conversion elements are divided into plural groups, each including a predetermined number (N) of the photoelectric conversion elements. The outputs from the photoelectric conversion elements in one group are read out simultaneously in response to the clock signal generated from the controller, thereby attaining a high speed reading of a document.

Abstract: A pixel circuit with a dual gate PMOS is formed by forming two P+ regions in an N? well. The N? well is in a P? type substrate. The two P+ regions form the source and drain of a PMOS transistor. The PMOS transistors formed within the N? well will not affect the collection of the photo-generated charge as long as the source and drain potentials of the PMOS transistors are set at a lower potential than the N? well potential so that they remain reverse biased with respect to the N? well. One of the P+ regions used to form the source and drain regions can be used to reset the pixel after it has been read in preparation for the next cycle of accumulating photo-generated charge. The N? well forms a second gate for the dual gate PMOS transistor since the potential of the N? well 12 affects the conductivity of the channel of the PMOS transistor. The addition of two NMOS transistors enables the readout signal to be stored at the gate of one of the NMOS transistors thereby making a snapshot imager possible.

Abstract: An image sensor system using offset analog to digital converters. The analog to digital converters require a plurality of clock cycles to carry out the actual conversion. These conversions are offset in time from one another, so that at each clock cycle, new data is available. A CMOS image sensor converts successive analog signals, representing at least a portion of an image, into successive digital signals using an analog to digital circuit block. Multiple clock cycles may be used by the circuit block to fully convert an analog signal into a corresponding digital signal. The conversion of one analog signal into a corresponding digital signal by the circuit block may be offset in time and partially overlapping with the conversion of a successive analog signal into its corresponding successive digital signal by the circuit block.