Abstract: According to one embodiment, a sensor device comprises a sensor configured to output a sense signal, a value the sense signal changing over time based on incident light, a first reset circuit configured to set the value of the sense signal to a reset value when the value of the sense signal exceeds a threshold, a counter configured to count a first number of times of reset by the first reset circuit, and an arithmetic operation circuit configured to calculate an amount of incident light of a certain period based on the value of the sense signal, the reset value, and the first number of times of reset.

Abstract: A camera monitors positions on an external object having a beacon (1(i), i=1, 2, . . . , I; 130; 430) attached to it. The apparatus has at least one image sensor (120; 321, 322; 420; 520), an imaging optical element (101) for projecting light on the image sensor (120), and a processing unit (9). The imaging optical element (101) may be non-refractive and receives a light beam (5(i); 131) transmitted from the beacon (1(i); 130; 430) and transfers the light beam (5(i); 131) to the image sensor (120; 321, 322; 420; 520). The image sensor (120; 321, 322; 420; 520) forms image data based on the received light beam (5(i); 131) and background light. The processing unit (9) processes the image data such that it filters image data components relating to the background light and renders image data components relating to the light beam.

Abstract: An electronic device is provided and includes a camera, a display, and a processor. The processor may be configured to control the display to display a second image determined based on a posture of the electronic device from a first image obtained using the camera, detect a finger object from the second image, identify a first virtual key corresponding to the finger object from a virtual keyboard based on a position and a degree of bending of the finger object, and identify an input of the first virtual key based on detecting a typing movement of the finger object. Other embodiments may also be possible.

Abstract: A vertically stacked image sensor with HDR imaging functionality and a method of operating the same are disclosed. The image sensor comprises, a first substrate, a pixel array organized into a plurality of pixel subarrays, of which each pixel comprises a photoelectric element for integrating a photocharge during each one of a plurality of subframe exposures, a transfer gate and a buffered charge-voltage converter. A first charge accumulation element of the charge-voltage converter is operatively connectable to at least one second charge accumulation element through a gain switch. The image sensor comprises control circuitry configured to trigger a partial or a complete transfer of the and to time-interleave at least two rolling shutter control sequences. Separate readout blocks are provided on the second substrate for each pixel subarray, each comprising in a pipelined architecture an A/D conversion unit, a pixel memory logic and a pixel memory unit.

Abstract: A circuit is provided and includes first to second switching units, a sensing unit, and first to second capacitive units. The first switching unit and the second switching unit are alternately turned on in response to, respectively, a first control signal and a second control signal that have different voltage levels. First terminals of the first and second switching units are coupled to each other. A sensing unit generates a sensing voltage, in response to light, at the first terminals of the first and second switching units. The first capacitive unit generates a first voltage, in response to the sensing voltage, at a second terminal of the first switching unit. The second capacitive unit generates a second voltage, in response to the generating the sensing voltage, at a second terminal of the second switching unit.

Abstract: An imaging device with low power consumption is provided. A pixel includes a first circuit and a second circuit. The first circuit can generate imaging data and retain difference data that is a difference between the imaging data and data obtained in an initial frame. The second circuit includes a circuit that compares the difference data and a voltage range set arbitrarily. The second circuit supplies a reading signal based on the comparison result. With the use of the structure, reading from the pixel is not performed when it is determined that the difference data is within the set voltage range and reading from the pixel can be performed when it is determined that the difference data is outside the voltage range.

Abstract: An image sensor with improved image quality is provided. An image sensor includes a pixel array including a plurality of unit pixels. Each of the unit pixels includes a first photoelectric converter configured to convert received light into charges, a first transfer transistor electrically connected between the first photoelectric converter and a first node, a connection transistor disposed connected to a second node and the first node, a dual conversion transistor electrically connected between a third node and the second node, a second transfer transistor electrically connected between a fourth node and the third node, a second photoelectric converter electrically connected to the fourth node and configured to convert the received light into charges, a first switch electrically connected to the second photoelectric converter and the fourth node, a first capacitor electrically connected to the fourth node, and a electrically second capacitor connected to the third node.

Abstract: An image sensor includes a first photoelectric conversion unit that converts light incident through a first opening to an electric charge, a second photoelectric conversion unit that converts light incident through a second opening which is smaller than the first opening to an electric charge, and a signal output wiring that outputs a first signal generated by the electric charge converted by the first photoelectric conversion unit and a second signal generated by the electric charge converted by the second photoelectric conversion unit. The second photoelectric conversion unit is disposed between the second opening and the signal output wiring.

Abstract: The various implementations described herein include methods, devices, and systems for implementing high dynamic range and automatic exposure functions in a video system. In one aspect, a method is performed at a video camera device and includes, while operating in a non-high dynamic range (HDR) mode: capturing first video data of a scene with the image sensor; determining whether a minimum number of pixels of the first video data meets one or more first color intensity criteria; and in accordance with the determination that the minimum number of pixels of the first video data meets the one or more first color intensity criteria, switching operation from the non-HDR mode to an HDR mode.

Abstract: A sensor having a set of plates, each having a sensing element, of a grid of wires disposed on a base, and a top surface layer that is disposed atop the set of plates, so that force imparted from above onto the top surface layer is transmitted to the plates and thence to the grid of wires. The sensor includes a computer in communication with the grid which causes prompting signals to be sent to the grid and reconstructs a continuous position of force on the surface from interpolation based on data signals received from the grid. A method for sensing.

Abstract: The present disclosure provides a method for calculating an exposure evaluation value and an imaging device. The method includes: dividing an image into a plurality of blocks, the plurality of blocks being arranged in a plurality of rows and columns, for each row of the plurality of rows: for each block of the row: accumulating brightness values of the plurality of pixels in the block to obtain an accumulated brightness value; calculating an average brightness value of the block according to the accumulated brightness value; and writing the average brightness value into a first random access memory, and clearing the plurality of registers in response to writing the average brightness value of each block of the row into the first random access memory, and obtaining an exposure evaluation value according to the average brightness values of the plurality of blocks and predetermined weight coefficients of the plurality of blocks.

Abstract: The present invention relates to a method of configuring an optical biometric imaging device comprising a photodetector pixel array, the method comprising: acquiring a biometric image of a biometric object using a first binning setting for binning of detection signals from subarrays of the photodetector pixels into a single pixel value; determining a measure indicative of the feature resolution of the biometric image; and determining, when the measure indicates that the feature resolution is below a feature resolution threshold, a second binning setting adapted to provide a higher feature resolution compared to the feature resolution of the biometric image.

Abstract: An input sensing device includes: sensor pixels, a horizontal driver, a selection circuit, and a vertical driver. Each of the sensor pixels is connected to a plurality of driving lines and a one of a plurality of signal input lines. The horizontal driver sequentially applies a horizontal driving signal to the sensor pixels through the driving lines. The selection circuit is connected to n of the signal input lines (n is a natural number of 2 or more) and to one output line. The selection circuit sequentially outputs n sensing signals received through the n signal input lines to the one output line. The vertical driver receives the n sensing signals through the one output line. The horizontal driver applies the horizontal driving signal n times to a given one of the driving lines to correspond to the n sensing signals.

Abstract: The dynamic range of a pixel is increased by using selective photosensor resets during a frame time of image capture at a timing depending on the light intensity that the pixel will be exposed to during the frame time. Pixels that will be exposed to high light intensity are reset later in the frame than pixels that will be exposed to lower light intensity.

Abstract: An image sensor and a method of operating the same are provided. The image sensor includes a semiconductor substrate of a first conductivity type; a photoelectric conversion region provided in the semiconductor substrate and doped to have a second conductivity type; a first floating diffusion region provided to receive photocharges accumulated in the photoelectric conversion region; a transfer gate electrode disposed between and connected to the first floating diffusion region and the photoelectric conversion region; a dual conversion gain transistor disposed between and connected to the first floating diffusion region and a second floating diffusion region; and a reset transistor disposed between and connected to the second floating diffusion region and a pixel power voltage region, wherein a channel region of the reset transistor has a potential gradient increasing in a direction from the second floating diffusion region toward the pixel power voltage region.

Abstract: An imaging device may include an image sensor that generates frames of image data in response to incident light with an array of image pixels, and processing circuitry that processes the image data. The processing circuitry may include a transformation circuit that applies transforms to subsampled frames of image data that are generated using a subset of the image pixels to produce transform values, and a comparator circuit that compares the transform values. The processing circuitry may determine that motion has occurred between sequential frames if a difference between a first transform value corresponding to a first image frame and a second transform value corresponding to a second image frame exceeds a threshold value. In response to determining that motion has occurred, the image sensor may generate full-frame image data using all of the pixels of the array of image pixels.

Abstract: An imaging device that facilitates pooling processing. A pixel region includes a plurality of pooling modules and an output circuit, the pooling module includes a pooling circuit and a comparison module, the pooling circuit includes a plurality of pixels and an arithmetic circuit, and the comparison module includes a plurality of comparison circuits and a determination circuit. The pixel can obtain a first signal through photoelectric conversion, and can multiply the first signal by a given scaling factor to generate a second signal. The pooling circuit adds a plurality of second signals in the arithmetic circuit to generate a third signal, the comparison module compares a plurality of third signals and outputs the largest third signal to the determination circuit, and the determination circuit determines the largest third signal and binarizes it to generate a fourth signal.

Abstract: Methods and apparatus for a controlling a stimulus source to direct photons to a pixel in a pixel array contained in a detector system, analyzing a response of the pixel in the pixel array; and generating an alert based on the response of the pixel in the pixel array. Example stimulus sources include a conductive trace, a PN junction, and a current source.

Abstract: Systems, methods, and apparatus are provided for real-time adjustment of image quality parameters. The system includes a controller configured to: acquire an image frame, having a fixed-pixel region that defines a region-of-interest, from one or more imaging devices; apply image processing techniques to determine a modified fixed-pixel region that excludes non-relevant object pixels; alter one or more image quality parameters based on statistics of pixels in the modified fixed-pixel region; and provide the altered one or more image quality parameters to the one or more imaging devices for use with subsequent image frames; wherein the one or more imaging devices produce an image that is tuned, based on the altered one or more image quality parameters, to the portions of the image in the region-of-interest that does not include the non-relevant object pixels.

Abstract: An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes, plural transfer MOSFETs arranged corresponding to the plural photodiodes, respectively, and a common MOSFET which amplifies and outputs signals read from the plural photodiodes. Each pair within the unit cell, composed of the photodiode and the transfer MOSFET provided corresponding to the photodiode, has translational symmetry with respect to one another. Within the unit cell, there are included a reset MOSFET and selecting MOSFET.

Abstract: In a solid-state image sensor that transfers electric charges to a floating diffusion layer, exposure is started before transferring the electric charges to the floating diffusion layer. A photodiode generates electric charges by photoelectric conversion. An electric charge accumulation unit accumulates electric charges. The floating diffusion layer converts electric charges into a signal level corresponding to the amount of the electric charges. An exposure end transfer transistor transfers the electric charges from the photodiode to the electric charge accumulation unit when a predetermined exposure period ends. A reset transistor initializes a voltage of the floating diffusion layer to a predetermined reset level when the exposure period ends. When a new exposure period is started after the electric charges are transferred to the electric charge accumulation unit, a discharge transistor discharges electric charges newly generated in the photodiode.

Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.

Abstract: An image sensor includes a pixel array including a first shared pixel and a second shared pixel that are adjacent to each other in a row direction. The first shared pixel includes two or more photo diodes in a first row and two or more photo diodes in a second row, and the first shared pixel includes a first floating diffusion region shared by the photo diodes of the first shared pixel. The second shared pixel includes two or more photo diodes in the first row and two or more photo diodes in the second row, and the second shared pixel includes a second floating diffusion region shared by the photo diodes of the second shared pixel.

Abstract: An image processing device includes an imaging element. The imaging element includes a pixel unit including a photoelectric conversion unit configured to convert light to electric charge and a charge accumulating unit configured to accumulate the electric charge and a column AMP configured to amplify a signal output from the pixel unit with different gains, and outputs a plurality of image signals with different gains applied thereto through one exposure. The image processing device further includes an image synthesizing unit configured to generate a synthetic image signal by synthesizing the plurality of image signals. An image synthesis control unit configured to control the image synthesizing unit determines synthesis proportions of the plurality of image signals in the synthetic image signal according to a common capacity of the charge accumulating unit when the capacity of the charge accumulating unit is shared by the plurality of image signals.

Abstract: An image sensor may include an array of image sensor pixels. Each pixel in the array may be a global shutter pixel having a first charge storage node configured to capture scenery information and a second charge storage node configured to capture background information generated as a result of parasitic light and dark noise signals. The first and/or second charge storage nodes may each be provided with an overflow charge storage to provide high dynamic range (HDR) functionality. The background information may be subtracted from the scenery information to cancel out the desired background signal contribution and to obtain an HDR signal with high global shutter efficiency. The charge storage nodes may be implemented as storage diode or storage gate devices. The pixels may be backside illuminated pixels with optical diffracting structures and multiple microlenses formed at the backside to distribute light equally between the two charge storage nodes.

Abstract: A sensing device, including a plurality of sensing pixels arranged in Y rows and M columns, a plurality of readout lines coupled to the sensing pixels, and a plurality of control lines each coupled to a sensing pixel subset, is provided. The Y times N sensing pixels within the sensing pixel subset are arranged in adjacent N columns, where Y, M and N are integers and N is smaller than M. Each of the control lines is configured to control one row of the sensing pixel subset to output signals through corresponding readout lines.

Abstract: Sensor systems and methods that provide an output in the form of a rate at which light is received by unit pixels within a sensor array are provided. Each unit pixel includes a photodetector that generates an electrical charge in response to receiving light, a charge accumulation area, and a comparator. Once the amount of charge in the accumulation area has reached some threshold amount, a counter is incremented. After the counter has been incremented a selected number of times, an output signal is generated, and the time at which the output signal is generated is marked or recorded. Different unit pixels receiving light at different rates therefore generate output signals at different times.

Abstract: Image processor circuitry includes a memory storing a program of instructions, and processing circuitry configured to execute the program of instructions to receive input data from an image sensor and detect an operation mode of the image sensor based on the input data, provide configuration data determined in association with the operation mode of the image sensor, and process image data in the input data in accordance with the operation mode and the configuration data.

Abstract: A storage system with temperature control. The system includes a plurality of storage devices such as solid state drives, a system controller such as a baseboard management controller, and one or more cooling fans. Each storage devices includes a controller configured to estimate the heat load in the storage device and/or an effective temperature, resulting from operations performed in the storage device. The system controller employs active disturbance rejection control to adjust the fan speed based on the estimated heat loads, the estimated temperatures, and/or the sensed internal temperatures, of the storage devices.

Abstract: A circuit, e.g., a CMOS sensor, with individually addressable transfer transistors and individually addressable reset transistors is described. Through the individually addressable transistors, pixels within different regions of interest, of the same or different size and/or the same or different exposure times, can be efficiently processed. Different regions of interest may be exposed concurrently and read out independently.

Abstract: It is intended to improve reading speed of pixel signals in a solid-state imaging element provided with an ADC. A plurality of pixels are arrayed in a pixel block. A drive circuit drives the pixel block to output a plurality of pixel signals at the same time. A comparator successively selects the plurality of pixel signals and compares the selected pixel signals and a predetermined reference signal. A control section generates a control signal for updating the predetermined reference signal on the basis of comparison results of the comparator. A reference signal update section updates the predetermined reference signal according to the control signal.

Abstract: Some embodiments include a system, comprising: a plurality of pixels; a plurality of data lines coupled to the pixels; a plurality of switches coupling the pixels to the data lines; a plurality of readout circuits coupled to the data lines; control logic coupled to the readout circuits, the control logic configured to, for one of the pixels: acquire a first value for the pixel while the corresponding switch is in an off state; reset the corresponding readout circuit corresponding for the pixel; acquire a second value for the pixel after resetting the readout circuit; turn on the corresponding switch; acquire a third value for the pixel after turning on the corresponding switch; and combine the first value, the second value, and the third value into a combined value for the pixel.

Abstract: A display device includes a display panel including a first pixel and a second pixel disposed adjacent to the first pixel along a first direction, a gate driver configured to provide gate signals to the display panel, a data driver configured to provide data signals to the first and second pixels and a driving controller configured to receive an image data, configured to provide a data signal to the data driver based on the image data, and configured to determine whether a white balance of a current image data corresponding to the second pixel is within a set range. The driving controller calculates the data voltage provided to the second pixel based on the white balance of the current image data corresponding to the second pixel, a previous image data corresponding to the first pixel, and the current image data.

Abstract: A photoelectric conversion device includes a photoelectric converter, a first node configured to be supplied with charges from the photoelectric converter, an amplification transistor configured to output a signal corresponding to a voltage of the first node, a first transistor configured to open/close a path between the first node and a second node not included in a path from the photoelectric converter to the first node, and a second transistor configured to open/close a path between the second node and a third node. A second capacitance which is added to the second node when the second transistor is set in a conductive state is larger than a first capacitance which is added to the first node when the first transistor is set in a conductive state.

Abstract: An imaging device according to the present disclosure is provided with: a pixel array having a plurality of pixels arranged in a matrix and outputting pixel signals corresponding to the amount of light received; a first column signal line and a second column signal line respectively provided corresponding to the columns of the pixel array; a first column circuit connected to the first column signal line; a second column circuit connected to the second column signal line; a first control line for controlling the first column circuit; a second control line for controlling the second column circuit; and a plurality of switches provided between the first control line and the second control line, and are controlled by a common signal.

Abstract: An imaging device includes pixel sensors. At drive-sense circuit is configured to generating a sensed signal corresponding to one of pixel sensors. The drive-sense circuit includes: a first conversion circuit configured to convert, a receive signal component of a sensor signal corresponding to the one of the pixel sensors into the sensed signal, wherein the sensed signal indicates a change in a capacitance associated with the one of the pixel sensors; a second conversion circuit configured to generate, based on the sensed signal, a drive signal component of the sensor signal corresponding to the one of the pixel sensors. The drive-sense circuit is further configured to generate other sensed signals corresponding to other ones of the pixel sensors for the other ones of the pixel sensors. A graphics processing module is configured to generate image data based on the sensed signal and the other sensed signals.

Abstract: Provided is an imaging device and an electronic device which enable image capturing based on the global shutter system, without reducing the amount of saturated signal charge. Pixels each including a photoelectric conversion unit that converts light received thereon into electric charge, and a holding unit that holds the electric charge transferred from the photoelectric conversion unit, a floating diffusion that is shared among a plurality of the pixels, and that holds the electric charge transferred from the holding unit, and a boost line through which the floating diffusion is boosted are included.

Abstract: Provided are a photoelectric detection circuit and a driving method thereof, a display apparatus and a manufacturing method thereof. The photoelectric detection circuit includes: a first reset sub-circuit, a second reset sub-circuit, a first storage sub-circuit, a data read sub-circuit and a photosensitive device. A first terminal of the data read sub-circuit, a first terminal of the first storage sub-circuit, a first electrode of the photosensitive device and a first terminal of the first reset sub-circuit are connected to a first node. A second electrode of the photosensitive device is connected to a common voltage line. The data read sub-circuit is configured to transmit a voltage of the first node to a data read line in response to a signal of a scan line. The first reset sub-circuit is configured to reset the voltage of the first node.

Abstract: An imaging device including pixels and processing circuitry, where the pixels capture a first image in a first exposure period within a frame period and capture a second image in a second exposure period within the frame period to generate multiple-exposure image data that include the first image and the second image in a multiplexed state, the second exposure period being different from the first exposure period, the second image being different from the first image in brightness or color, and the processing circuitry detects an image of a moving subject from the multiple-exposure image data.

Abstract: An image sensor includes a pixel array including a first pixel and a second pixel which are connected to a first column line, and a row driver configured to control a read operation of the second pixel. A voltage of the first column line is determined based on a higher voltage among a voltage of a floating diffusion node of the first pixel and a voltage of a floating diffusion node of the second pixel during the read operation of the second pixel.

Abstract: Some embodiments include a memory device having a buried wordline, a shield plate, and an access device. The access device includes first and second diffusion regions and a channel region. The diffusion regions and the channel region are arranged vertically so that the channel region is between the first and second diffusion regions. The wordline is adjacent to a first side surface of the channel region, and the shield plate is adjacent to a second side surface of the channel region; with the first and second side surfaces being in opposing relation to one another. Some embodiments include methods of forming integrated assemblies.

Abstract: The present disclosure relates to an event-driven sensor comprising: a pixel array (102); a column readout circuit (104) comprising, for each of the column output lines, a column register cell (108) configured to activate a column event output signal (addrx) when it receives a first token while the detection of an event is indicated on the column output line; and a row readout circuit (106) comprising, for each of the row output lines, or for each of a plurality of sub-groups of the row output lines, a row register cell (108) configured to activate a row event output signal (addry) when it receives a second token while an event is indicated on the row output line, or on one of the row output lines of the sub-group.

Abstract: According to one embodiment, a non-volatile memory device includes electrodes, an interlayer insulating film, at least one semiconductor layer, conductive layers, first and second insulating films. The electrodes are arranged in a first direction. The interlayer insulating film is provided between the electrodes. The semiconductor layer extends in the first direction in the electrodes and the interlayer insulating film. The conductive layers are provided between each of the electrodes and the semiconductor layer, and separated from each other in the first direction. The first insulating film is provided between the conductive layers and the semiconductor layer. The second insulating film is provided between each of the electrodes and the conductive layers, and extends between each of the electrodes and the interlayer insulating film adjacent to the each of the electrodes. A width of the conductive layers in the first direction is narrower than that of the second insulating film.

Abstract: In an example, a wireless gamma and or hard X-ray radiation detector includes a bulk semiconductor crystal, electrical contacts, a bias circuit, and a terahertz (THz) electromagnetic (EM) wave receiver. The bulk semiconductor crystal and includes indium antimonide (InSb), cadmium telluride (CdTe), or cadmium zinc telluride (CdZnTe). The electrical contacts are coupled to two facets of the bulk semiconductor crystal. The bias circuit is electrically coupled to the bulk semiconductor crystal through the electrical contacts. The THz EM wave receiver is positioned to detect THz radiation emitted by the bulk semiconductor crystal.

Abstract: Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.

Abstract: The present technology relates to a solid-state image sensor, an imaging device, and an electronic device capable of switching FD conversion efficiency in all pixels of a solid-state image sensor. A photodiode performs photoelectric conversion on incident light. A floating diffusion (FD) stores charge obtained by the photodiode. FD2, which is a second FD to which the capacity of an additional capacitor MIM is added, adds the capacity to the FD. The additional capacitor MIM is constituted by a first electrode formed by a wiring layer and a second electrode formed by a metallic light blocking film provided on a surface of a substrate on which the photodiode is formed. Switching between the FD and FD+FD2 allows switching of the FD conversion efficiency. The present technology is applicable to a CMOS image sensor.

Abstract: The present technology relates to a light-receiving element and a distance measurement module. A light-receiving element includes: a first voltage application unit to which a voltage is applied; a first charge detection unit that is disposed at a periphery of the first voltage application unit; a second voltage application unit to which a voltage is applied; a second charge detection unit that is disposed at a periphery of the second voltage application unit; a third voltage application unit to which a first voltage is applied; and a voltage control unit that applies a second voltage to one of the first voltage application unit and the second a voltage application unit and causes the other to be in a floating state, the second voltage being different from the first voltage. The present technology is applicable to a light-receiving element.

Abstract: A camera system includes: a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric conversion layer converting incident light into electric charge; voltage application circuitry; and a controller that derives a duty cycle corresponding to an attenuation ratio set for a first frame and that causes the voltage application circuitry to apply a pulse voltage having the duty cycle between the first electrode and the second electrode in the first frame.

Abstract: An image sensor includes an image sensor pixel array having pixels. Each pixel includes a continuous active region having a first portion and a second portion extending from the first portion. A photodiode, a reset transistor, a drive transistor, and a select transistor are formed in and over the first portion. The photodiode and the reset transistor define a floating diffusion region therebetween. A switch transistor is formed in and over the second portion and includes a first source/drain region and a second source/drain region. The first source/drain region is included in the floating diffusion region. The second source/drain region interfaces a doped region formed in the second region. The pixel also includes a gate structure disposed directly over the doped region. By controlling the switch transistor, the pixel may operate in a high conversion gain mode or a low conversion gain mode to accommodate different illumination or exposure conditions.

Abstract: The present technology relates to a light reception device and a distance measurement module whose characteristic can be improved. The light reception device includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer. The semiconductor layer includes a first tap having a first voltage application portion and a first charge detection portion arranged around the first voltage application portion, and a second tap having a second voltage application portion and a second charge detection portion arranged around the second voltage application portion. Furthermore, the light reception device is configured such that a phase difference is detected using signals detected by the first tap and the second tap. The present technology can be applied, for example, to a light reception device that generates distance information, for example, by a ToF method, and so forth.