Abstract: An imaging apparatus includes: an imaging unit that is capable of performing imaging and recording; a first operating part; a second operating part; a mode setting unit; a storage unit that stores a still picture set value for imaging and recording of a still picture and a motion picture set value for imaging and recording of a motion picture; and a control unit as defined herein.

Abstract: Systems, apparatuses, and methods for improved reconfigurable optical sensing are provided. For instance, an example optical sensing apparatus can include a photodetector array including a plurality of photodetectors. The optical sensing apparatus can include circuitry or one or more processing devices configured to receive one or more electrical signals representing an optical signal received by a first subset of the plurality of photodetectors; determine, based on the one or more electrical signals, a region of interest in the photodetector array for optical measurements; and deactivate, based on the region of interest, a second subset of the plurality of photodetectors of the photodetector array.

Abstract: Pixels output a first signal based on signal charge of a part of photoelectric conversion units of multiple photoelectric conversion units, and a second signal based on signal charge of multiple photoelectric conversion units. An imaging apparatus outputs signals based on the first signals and signals based on the second signals by reducing the number of signals based on the first signals as compared to the number of signals based on the second signals.

Abstract: First and second readout circuits, each having a respective floating diffusion node, are coupled to a photodetection element within a pixel of an integrated-circuit image sensor. Following an exposure interval in which photocharge is accumulated within the photodetection element, a first portion of the accumulated photocharge is transferred from the photodetection element to the first floating diffusion node to enable generation of a first output signal within the first readout circuit, and a second portion of the accumulated photocharge is transferred from the photodetection element to the second floating diffusion node to enable generation of a second output signal within the second readout circuit. A digital pixel value is generated based on the first and second output signals.

Abstract: An imaging device according to an embodiment of the present disclosure includes a light-receiving pixel, a power supply, a driver, and a current circuit. The light-receiving pixel includes a light-receiving element and a pixel transistor. The light-receiving element generates electric charge corresponding to an amount of received light. The power supply generates a first power supply voltage at a first power supply node. The driver drives the pixel transistor on the basis of the first power supply voltage at the first power supply node. The current circuit causes a power supply current to flow through a current path led to the first power supply node. The power supply current has a predetermined current value. The current circuit includes a load, a load driving section, and a switch. The load driving section drives the load. The switch is provided on the current path.

Abstract: A single exposure high dynamic range (HDR) analog front-end (AFE) for complementary metal-oxide-semiconductor (CMOS) image sensors. In one embodiment, a single exposure HDR AFE includes input signal circuitry, gain stage circuitry, a continuous-time filter, comparator circuitry, and counter circuitry. The input signal circuitry is configured to generate an input signal. The gain stage circuitry including two gain stages and one gain stage is configured to generate a high gain output signal based on the input signal. The continuous-time filter is configured to generate a filtered high gain output signal by filtering the high gain output signal. The comparator circuitry is configured to generate a high gain comparison signal by comparing the filtered high gain output signal to the ramp voltage. The counter circuitry is configured to generate a high gain digital output signal based on the high gain comparison signal and using the clock signal.

Abstract: A solid-state imaging device includes a plurality of pixel regions. Each of the plurality of pixel regions includes a first photoelectric conversion unit and a second photoelectric conversion unit. The second photoelectric conversion unit overlaps the first photoelectric conversion unit when viewed in a light incident direction. At least one of the first photoelectric conversion unit and the second photoelectric conversion unit is an embedded unit. The first photoelectric conversion unit and the second photoelectric conversion unit are electrically connected to mutually different types of readout circuits.

Abstract: Various aspects provide a transceiver and a communication device including the transceiver. In an example, the transceiver includes an amplifier circuit including an amplifier stage with an adjustable degeneration component, the amplifier stage configured to amplify a received input signal with an adjustable gain, an adjustable feedback component coupled to the amplifier stage; and a controller coupled to the amplifier stage and to the adjustable feedback component and configured to adjust the adjustable feedback component based on an adjustment of the adjustable degeneration component.

Abstract: An image sensor and an operating method thereof are provided. The image sensor includes a first pixel circuit, a first column readout circuit, and a second column readout circuit. The first pixel circuit includes a first pixel unit, a first transfer transistor, a first reset transistor, a first readout transistor, and a first capacitor. The first column readout circuit includes a first circuit node. The second column readout circuit includes a bias transistor. A first terminal of the first reset transistor and a first terminal of the first readout transistor are coupled to the first circuit node, and a second terminal of the first readout transistor is coupled to the bias transistor.

Abstract: An image processor includes an information transmission controller that transmits data including an image of an object and information indicating a result of a process to a terminal through a network. The information transmission controller changes a resolution of a transmission image to be transmitted to the terminal in accordance with at least one of a capability of the terminal, a load status of the terminal, a load status of the network, or a load status of the image processor, and adjusts coordinates on the transmission image at which the information is to be superimposed in accordance with the changed resolution.

Abstract: An imaging element comprises a first communication interface that is incorporated in the imaging element and outputs first image data based on image data obtained by imaging a subject to an external processor, a memory that is incorporated in the imaging element and stores the image data, and a second communication interface that is incorporated in the imaging element and outputs second image data based on the image data stored in the memory to the external processor, in which an output method of the first communication interface and an output method of the second communication interface are different.

Abstract: A unit pixel includes a first photoelectric converter, a first transfer transistor disposed between to the first photoelectric converter and a first node, a connection transistor disposed between and connected to a second node and the first node, a second transfer transistor disposed between and connected to a third node and the second node, a second photoelectric converter connected to the third node, and a storage metal-oxide semiconductor (MOS) capacitor connected to the third node. The storage MOS capacitor stores charges from the second photoelectric converter. For a first time period, first charges accumulated in the first photoelectric converter are transferred to the first node, for a second time period, second charges accumulated in the first photoelectric converter are transferred to the first node and the second node, and for a third time period, third charges accumulated in the second photoelectric converter are transferred to the first to third nodes.

Abstract: A method, apparatus and system are described providing a high dynamic range pixel. An integration period has multiple sub-integration periods during which charges are accumulated in a photosensor and repeatedly transferred to a storage node, where the charges are accumulated for later transfer to another storage node for output.

Abstract: An image sensor may include a first substrate having first and second surfaces and including unit pixel regions, each of which includes a device isolation pattern and a photoelectric conversion region adjacent to the first surface of the first substrate, a pixel isolation pattern provided in the first substrate to define the unit pixel regions and to penetrate the device isolation pattern, a first impurity region and a floating diffusion region provided in the first substrate and adjacent to the first surface, a second substrate provided on the first substrate to have third and fourth surfaces, a second impurity region provided in the second substrate and adjacent to the third surface, and ground and body contacts coupled to the first and second impurity regions, respectively. The ground contact and the body contact may be electrically separated from each other.

Abstract: An imaging device includes a voltage generation circuit and an output circuit. The voltage generation circuit includes a first capacitance element including a fifth terminal. The voltage generation circuit is configured to provide the fifth terminal with a first voltage in accordance with a power source voltage so as to store an electric charge in the first capacitance element. The voltage generation circuit is configured to increase a voltage of the fifth terminal by a second voltage in accordance with the power source voltage so as to generate a control voltage having a greater absolute value than an absolute value of the power source voltage. The output circuit is configured to output the control voltage to at least one of a gate terminal of a reset transistor of a pixel and a gate terminal of a transfer transistor of the pixel.

Abstract: A solid-state imaging apparatus includes: an overflow element group that accumulates a signal charge that overflows from a photodiode; and a floating diffusion layer that selectively holds a signal charge transferred from the photodiode and a signal charge transferred from the overflow element group. The overflow element group includes m groups (m?2) connected in series in stages, each group including an overflow element and a storage capacitive element. An overflow element among the groups transfers, to the storage capacitive element included in the same group as the overflow element, a signal charge that overflows from the photodiode or a signal charge from an upstream storage capacitive element among the groups.

Abstract: A unit pixel includes first and second photoelectric conversion units, a first transfer transistor disposed between the first photoelectric conversion unit and a first node, a first capacitor connected to the first node through a first switch transistor, and a second transfer transistor disposed between the second photoelectric conversion unit and the first node. A signal including a first voltage level is applied to the first transfer transistor and the second transfer transistor during a first time interval, a signal including a second voltage level is applied to the first transfer transistor, the second transfer transistor, and the first switch transistor during a second time interval, a signal including a third voltage level is applied to the first transfer transistor during a third time interval, and the signal including the first voltage level is applied to the second transfer transistor and the first switch transistor during a fourth time interval.

Abstract: Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.

Abstract: Embodiments of pixel circuit, image sensor, image pickup device and methods for using the same are provided. In an example, the pixel circuit comprises a source module configured to output non-simultaneously a reference signal indicative of a reset level and an electrical signal indicative of incident light, a sampling module comprising a first sampling unit, a second sampling unit and a sampling switch, a first switch module configured to be electrically coupled between the source module and the sampling module, and a second switch module configured to be electrically coupled between the sampling module and a bus.

Abstract: An image sensor may include a pixel array and associated readout paths calibration circuitry. The image sensor may include first column readout circuits formed along a first edge of the pixel array and second column readout circuits formed along a second opposing edge of the pixel array. The readout paths calibration circuitry may include one or more first calibration readout circuits located by the first edge of the array, one or more second calibration readout circuits located by the second edge of the array, and an error detection circuit configured to output an error signal based on signals output from the one or more first calibration readout circuits and the one or more second calibration readout circuits. The one or more second calibration readout circuits and the second column readout circuits can receive a reference voltage that is dynamically adjusted based on the error signal.

Abstract: The invention implements room temperature imaging of a photovoltaic diode image array operating in any spectral band (visible through extreme thermal). The invention also operates the photo diodes at zero bias voltage and thus eliminates 1/f (burst) noise and dark current. And the invention simplifies the electrical-mechanical interface between the readout integrated circuit (ROIC) and the photodetector array and minimizes the component count on the ROIC. These advantages are realized by multiplexing the photocurrents from each photodiode in the array according to an orthogonal or biorthogonal code set. The multiplexed current is supplied to an op amp such that zero bias is maintained for the photodetector array. The code set also allows the photocurrent generated by each photodiode to be recovered.

Abstract: A camera system includes: a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric conversion layer converting incident light into electric charge; voltage application circuitry that supplies a first voltage and a second voltage less than the first voltage between the first electrode and the second electrode such that the first voltage is applied at least one time in a frame; and a controller that derives a total length of at least one period in which the first voltage is applied in the frame, the total length corresponding to an attenuation ratio set for the frame, and causes the voltage supply circuitry to supply the first voltage in the at least one period having the total length in the frame.

Abstract: This Orthogonal Code Readout (OCR) electronically expands the dynamic range of CMOS active pixels by adding digital electron wells. The dynamic range of an active pixel is not limited by in-pixel capacitance. When employed as a thermal array readout, OCR simplifies thermal detector array fabrication by eliminating the need for large electron well capacitors. OCR also improves digital quantization beyond that provided by hardware digitizers.

Abstract: A system is provided that is configured to encode an image in accordance with a variable resolution image format. The variable resolution image format allows the specification of a number of windows in terms of their location and resolution. The image can be decomposed into a minimum number of square superpixels such that all specified windows are at the assigned resolution or better. By encoding one image where only critical portions are at the high resolution while less critical portions are at intermediate or lower resolutions, the number of bits that need to be transmitted from the system to a remote host subsystem can be dramatically reduced.

Abstract: Imaging device comprising: a substrate; a pinned photodiode formed on the substrate, wherein the pinned photodiode generates charge that is representative of incident radiation, wherein the imaging device further comprises: circuitry defining a first path for measuring charge and configured to non-destructively produce a signal representative of the charge generated in the pinned photodiode; circuitry defining a subsequent second path for measuring charge and configured to produce a signal representative of the charge generated in the pinned photodiode, and wherein the first and second paths have different conversion gain.

Abstract: A photoelectric conversion device includes a semiconductor substrate, a photoelectric conversion unit, an amplification transistor, and an insulating isolation portion. The photoelectric conversion unit is disposed inside the semiconductor substrate. The amplification transistor is configured to output a signal from the photoelectric conversion unit. The insulating isolation portion, disposed between the photoelectric conversion unit and the amplification transistor to surround the amplification transistor in a plan view, is configured to penetrate through the semiconductor substrate. A first well in which the amplification transistor is disposed is connected to a source or a drain of the amplification transistor.

Abstract: A device includes a pixel array including a plurality of pixels, a first pixel and a second pixel of the plurality of pixels corresponding to different colors, the first pixel and a third pixel of the plurality of pixels corresponding to a same color, a first circuit group connected to the first pixel, a third circuit group connected to the third pixel, and a first circuit included in the first circuit group, a second circuit, and a third circuit included in the third circuit group and having a function same as a function of the first circuit, the third circuit being arranged between the first circuit and the second circuit in a top view.

Abstract: A solid-state imaging device includes a pixel region in which shared pixels which share pixel transistors in a plurality of photoelectric conversion portions are two-dimensionally arranged. The shared pixel transistors are divisionally arranged in a column direction of the shared pixels, the pixel transistors shared between neighboring shared pixels are arranged so as to be horizontally reversed or/and vertically crossed, and connection wirings connected to a floating diffusion portion, a source of a reset transistor and a gate of an amplification transistor in the shared pixels are arranged along the column direction.

Abstract: An image sensor includes: (A) a first circuit layer provided with a comparison unit that (i) compares a first signal caused by an electric charge generated by a photoelectric conversion unit that photoelectrically converts light to generate the electric charge with a first reference signal, and (ii) compares a second signal for correcting the first signal with a second reference signal; and (B) a second circuit layer provided with (i) a first storage unit that stores a third signal that is based on a result of the comparison between the first signal and the first reference signal, and (ii) a second storage unit that stores a fourth signal that is based on a result of the comparison between the second signal and the second reference signal.

Abstract: The present application provides a pixel unit, a sensor and a sensing array. The pixel unit includes a charge collecting area configured to receive radiation to generate photo-generated charge; a transmission gate connected between the charge collecting area and a floating diffusion node and configured to transfer the photo-generated charge from the charge collecting area to the floating diffusion node; an electric potential adjustment area disposed at a periphery of the charge collecting area and configured to concentrate the photo-generated charge to a side of a connection between the charge collecting area and the transmission gate.

Abstract: According to one embodiment, a non-volatile memory device includes electrodes, an interlayer insulating film, at least one semiconductor layer, conductive layers, first and second insulating films. The electrodes are arranged in a first direction. The interlayer insulating film is provided between the electrodes. The semiconductor layer extends in the first direction in the electrodes and the interlayer insulating film. The conductive layers are provided between each of the electrodes and the semiconductor layer, and separated from each other in the first direction. The first insulating film is provided between the conductive layers and the semiconductor layer. The second insulating film is provided between each of the electrodes and the conductive layers, and extends between each of the electrodes and the interlayer insulating film adjacent to the each of the electrodes. A width of the conductive layers in the first direction is narrower than that of the second insulating film.

Abstract: An imaging device including: a first imaging cell including a first photoelectric converter that generates a first signal; and a second imaging cell including: a second photoelectric converter that generates a second signal; and a capacitor having a first and second terminal, the first terminal electrically coupled to second photoelectric converter. An area of the first photoelectric converter is greater than an area of the second photoelectric converter in a plan view, the first imaging cell has a first number of saturation charges, and the second imaging cell has a second number of saturation charges, the first number of saturation charges is greater than the second number of saturation charges, and the capacitor has capacitance that causes the second number of saturation charges of the second imaging cell to become greater than the first number of saturation charges of the first imaging cell.

Abstract: An imaging element includes a first photoelectric conversion unit and a second photoelectric conversion unit that generates electric charges by photoelectric conversion, a first comparison unit that outputs a first signal based on a result of comparing a signal based on electric charges generated by the first photoelectric conversion unit and a reference signal, a first storage unit that stores a signal based on the first signal that is output by the first comparison unit, a second comparison unit that outputs a second signal based on a result of comparing a signal based on electric charges generated by the second photoelectric conversion unit and a reference signal, a second storage unit that stores a signal based on the second signal that is output from the second comparison unit, and a connection unit that connects or disconnect the first comparison unit and the second storage unit.

Abstract: Systems and methods to track an object within an operating room with a camera unit. The camera unit includes a first optical sensor with sensing elements to sense light in a near-infrared spectrum and a second optical sensor to sense light in a visible light spectrum. A controller is in communication with the first and second optical sensors. The controller obtains, from the second optical sensor, data related to the object within the operating room. The controller modifies control of the sensing elements of the first optical sensor based on the data of the object obtained by the second optical sensor.

Abstract: An event-based sensor has an array of pixels facing a scene. The information to be processed includes events originating from the pixels depending on variations of incident light from the scene. A method includes storing a data structure for a set of pixels of the array, the data structure including, for each pixel of the set, event data associated with a most recent event originating from the pixel. Upon receiving a current event from a first pixel of the array, the method includes retrieving any event data included in the data structure for a group of pixels including the first pixel and a plurality of second pixels adjacent to the first pixel in the array. The current event is labelled based on at least one connectivity criterion between the current event and the most recent event originating from a pixel of the group.

Abstract: First and second readout circuits, each having a respective floating diffusion node, are coupled to a photodetection element within a pixel of an integrated-circuit image sensor. Following an exposure interval in which photocharge is accumulated within the photodetection element, a first portion of the accumulated photocharge is transferred from the photodetection element to the first floating diffusion node to enable generation of a first output signal within the first readout circuit, and a second portion of the accumulated photocharge is transferred from the photodetection element to the second floating diffusion node to enable generation of a second output signal within the second readout circuit. A digital pixel value is generated based on the first and second output signals.

Abstract: A computational pixel imaging device can include multiple digitizing counters per pixel that can be used to execute simultaneous signal-processing threads on acquired image data. The imaging device can also include infinite dynamic range sensing and perform signal down-sampling.

Abstract: According to one embodiment, a sensor device comprises a sensor configured to output a sense signal, a value the sense signal changing over time based on incident light, a first reset circuit configured to set the value of the sense signal to a reset value when the value of the sense signal exceeds a threshold, a counter configured to count a first number of times of reset by the first reset circuit, and an arithmetic operation circuit configured to calculate an amount of incident light of a certain period based on the value of the sense signal, the reset value, and the first number of times of reset.

Abstract: A camera monitors positions on an external object having a beacon (1(i), i=1, 2, . . . , I; 130; 430) attached to it. The apparatus has at least one image sensor (120; 321, 322; 420; 520), an imaging optical element (101) for projecting light on the image sensor (120), and a processing unit (9). The imaging optical element (101) may be non-refractive and receives a light beam (5(i); 131) transmitted from the beacon (1(i); 130; 430) and transfers the light beam (5(i); 131) to the image sensor (120; 321, 322; 420; 520). The image sensor (120; 321, 322; 420; 520) forms image data based on the received light beam (5(i); 131) and background light. The processing unit (9) processes the image data such that it filters image data components relating to the background light and renders image data components relating to the light beam.

Abstract: An electronic device is provided and includes a camera, a display, and a processor. The processor may be configured to control the display to display a second image determined based on a posture of the electronic device from a first image obtained using the camera, detect a finger object from the second image, identify a first virtual key corresponding to the finger object from a virtual keyboard based on a position and a degree of bending of the finger object, and identify an input of the first virtual key based on detecting a typing movement of the finger object. Other embodiments may also be possible.

Abstract: A vertically stacked image sensor with HDR imaging functionality and a method of operating the same are disclosed. The image sensor comprises, a first substrate, a pixel array organized into a plurality of pixel subarrays, of which each pixel comprises a photoelectric element for integrating a photocharge during each one of a plurality of subframe exposures, a transfer gate and a buffered charge-voltage converter. A first charge accumulation element of the charge-voltage converter is operatively connectable to at least one second charge accumulation element through a gain switch. The image sensor comprises control circuitry configured to trigger a partial or a complete transfer of the and to time-interleave at least two rolling shutter control sequences. Separate readout blocks are provided on the second substrate for each pixel subarray, each comprising in a pipelined architecture an A/D conversion unit, a pixel memory logic and a pixel memory unit.

Abstract: An image sensor with improved image quality is provided. An image sensor includes a pixel array including a plurality of unit pixels. Each of the unit pixels includes a first photoelectric converter configured to convert received light into charges, a first transfer transistor electrically connected between the first photoelectric converter and a first node, a connection transistor disposed connected to a second node and the first node, a dual conversion transistor electrically connected between a third node and the second node, a second transfer transistor electrically connected between a fourth node and the third node, a second photoelectric converter electrically connected to the fourth node and configured to convert the received light into charges, a first switch electrically connected to the second photoelectric converter and the fourth node, a first capacitor electrically connected to the fourth node, and a electrically second capacitor connected to the third node.

Abstract: An imaging device with low power consumption is provided. A pixel includes a first circuit and a second circuit. The first circuit can generate imaging data and retain difference data that is a difference between the imaging data and data obtained in an initial frame. The second circuit includes a circuit that compares the difference data and a voltage range set arbitrarily. The second circuit supplies a reading signal based on the comparison result. With the use of the structure, reading from the pixel is not performed when it is determined that the difference data is within the set voltage range and reading from the pixel can be performed when it is determined that the difference data is outside the voltage range.

Abstract: A circuit is provided and includes first to second switching units, a sensing unit, and first to second capacitive units. The first switching unit and the second switching unit are alternately turned on in response to, respectively, a first control signal and a second control signal that have different voltage levels. First terminals of the first and second switching units are coupled to each other. A sensing unit generates a sensing voltage, in response to light, at the first terminals of the first and second switching units. The first capacitive unit generates a first voltage, in response to the sensing voltage, at a second terminal of the first switching unit. The second capacitive unit generates a second voltage, in response to the generating the sensing voltage, at a second terminal of the second switching unit.

Abstract: An image sensor includes a first photoelectric conversion unit that converts light incident through a first opening to an electric charge, a second photoelectric conversion unit that converts light incident through a second opening which is smaller than the first opening to an electric charge, and a signal output wiring that outputs a first signal generated by the electric charge converted by the first photoelectric conversion unit and a second signal generated by the electric charge converted by the second photoelectric conversion unit. The second photoelectric conversion unit is disposed between the second opening and the signal output wiring.

Abstract: The various implementations described herein include methods, devices, and systems for implementing high dynamic range and automatic exposure functions in a video system. In one aspect, a method is performed at a video camera device and includes, while operating in a non-high dynamic range (HDR) mode: capturing first video data of a scene with the image sensor; determining whether a minimum number of pixels of the first video data meets one or more first color intensity criteria; and in accordance with the determination that the minimum number of pixels of the first video data meets the one or more first color intensity criteria, switching operation from the non-HDR mode to an HDR mode.

Abstract: A sensor having a set of plates, each having a sensing element, of a grid of wires disposed on a base, and a top surface layer that is disposed atop the set of plates, so that force imparted from above onto the top surface layer is transmitted to the plates and thence to the grid of wires. The sensor includes a computer in communication with the grid which causes prompting signals to be sent to the grid and reconstructs a continuous position of force on the surface from interpolation based on data signals received from the grid. A method for sensing.

Abstract: The present disclosure provides a method for calculating an exposure evaluation value and an imaging device. The method includes: dividing an image into a plurality of blocks, the plurality of blocks being arranged in a plurality of rows and columns, for each row of the plurality of rows: for each block of the row: accumulating brightness values of the plurality of pixels in the block to obtain an accumulated brightness value; calculating an average brightness value of the block according to the accumulated brightness value; and writing the average brightness value into a first random access memory, and clearing the plurality of registers in response to writing the average brightness value of each block of the row into the first random access memory, and obtaining an exposure evaluation value according to the average brightness values of the plurality of blocks and predetermined weight coefficients of the plurality of blocks.

Abstract: The present invention relates to a method of configuring an optical biometric imaging device comprising a photodetector pixel array, the method comprising: acquiring a biometric image of a biometric object using a first binning setting for binning of detection signals from subarrays of the photodetector pixels into a single pixel value; determining a measure indicative of the feature resolution of the biometric image; and determining, when the measure indicates that the feature resolution is below a feature resolution threshold, a second binning setting adapted to provide a higher feature resolution compared to the feature resolution of the biometric image.

Abstract: An input sensing device includes: sensor pixels, a horizontal driver, a selection circuit, and a vertical driver. Each of the sensor pixels is connected to a plurality of driving lines and a one of a plurality of signal input lines. The horizontal driver sequentially applies a horizontal driving signal to the sensor pixels through the driving lines. The selection circuit is connected to n of the signal input lines (n is a natural number of 2 or more) and to one output line. The selection circuit sequentially outputs n sensing signals received through the n signal input lines to the one output line. The vertical driver receives the n sensing signals through the one output line. The horizontal driver applies the horizontal driving signal n times to a given one of the driving lines to correspond to the n sensing signals.